ANPEC APM2505NU Service Manual
APM2505NU
N-Channel Enhancement Mode MOSFET
Fe atures
• 25V/50A,
R
R
=4mΩ (typ.) @ VGS=10V
DS(ON)
=7mΩ (typ.) @ VGS=4.5V
DS(ON)
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)
Ap plicatio ns
• Powe r Management in Desktop Computer or
DC/D C Converters
Pin De scr iption
G D
S
Top View of TO-252
D
G
S
N-C hannel MOSFET
Ord ering and Ma rking Informatio n
APM2505N
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2505N U :
Note: ANPEC lead-free prod uc ts conta in molding co mp ou nds an d 10 0% matte tin plate te rmination finish ;
which are fully compliant with Ro HS and c ompatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exc eed the le ad-free re qu ire ments of IPC /J ED EC J STD-020C for MSL
classification at lead-free p eak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Cop yright ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
APM2505N
XXXXX
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
°
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APM2505NU
DSS
GSS
Ab solute Maximum Ratings
Symbol
Common Ratings (T
V
V
TJ
T
STG
=25°C Unless Otherwise Noted)
A
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range -55 to 150
IS Diode Continuous Forward Current TC=25°C
Mounted on Large Heat Sink
R
IDP
ID
PD
θ
JC
300µ s Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Mounted on PCB of 1in2 Pad Area
IDP
300µ s Pulse Drain Current Tested
Parameter Rating Unit
25
±20
150
5
TC=25°C 120
TC=100°C 75
TC=25°C 50*
TC=100°C 30
TC=25°C
TC=100°C
50
20
2.5
TA=25°C 120
TA=100°C 75
V
°C
°C
A
A
A
W
°C/W
A
R
ID
PD
θ
JA
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient 50 °C/W
Mounted on PCB of Minimum Footprint
IDP
ID
PD
R
θ
JA
Note:
* Current limited by bond wire.
Cop yright ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
300µ s Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient 75 °C/W
TA=25°C 17
TA=100°C 10
TA=25°C
TA=100°C
2.5
1
TA=25°C 120
TA=100°C 75
TA=25°C 14
TA=100°C 9
TA=25°C
TA=100°C
1.6
0.6
A
W
A
A
W
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APM2505NU
Electrical Characteristics (T
Symbol
Parameter Test Condition
= 25°C unless otherwise noted)
A
APM2505NU
Min. Typ. Max.
Static Characteristics
BV
Drain-Source Breakdown Voltage
DSS
VGS=0V, IDS=250µA
25 V
VDS=20V, VGS=0V 1
I
Zero Gate Voltage Drain Current
DSS
V
Gate Threshold Voltage
GS(th)
I
Gate Leakage Current VGS=±20V, VDS=0V ±100 nA
GSS
DS(ON)
a
Drain-Source On-state Resistance
R
TJ=85°C
VDS=VGS, IDS=250µA
30
1 1.5 2 V
VGS=10V, IDS=40A 4 5.5
VGS=4.5V, IDS=20A 7 8
Diode Characteristics
a
V
Diode Forward Voltage ISD=5A, VGS=0V 0.8 1.3 V
SD
Dynamic Characteristicsb
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz
C
Input Capacitance 4700
iss
C
Output Capacitance 930
oss
C
Reverse Transfer Capacitance
rss
t
Turn-on Delay Time 22 41
d(ON)
Tr Turn-on Rise Time 16 29
t
Turn-off Delay Time 150 210
d(OFF)
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15
IDS=1A, V
GEN
Ω
=10V,
,
RG=6Ω
Tf Turn-off Fall Time
1.3 Ω
280
68 82
Unit
µ
A
Ω
m
pF
ns
Gate Charge Characteristicsb
Qg Total Gate Charge 88 114
Qgs Gate-Source Charge 12.8
Qgd Gate-Drain Charge
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Cop yright ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
VDS=25V, VGS=10V,
IDS=30A
21.2
nC
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