ANPEC APM2300AC-TR Datasheet

N-Channel Enhancement Mode MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

APM2300

Pin Description

Ordering and Marking Information

Features

Applications

Absolute Maximum Ratings

(TA = 25°C unless otherwise noted)

• 20V/6A , R

DS(ON)

=35mΩ(typ.) @ VGS=10V

R

DS(ON)

=45mΩ(typ.) @ VGS=4.5V

R

DS(ON)

=115mΩ(typ.) @ VGS=2.5V

••

••

• Super High Dense Cell Design for Extremely

Low R

DS(ON)

••

••

• Reliable and Rugged

••

••

• SOT-23 Package

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

APM 2300

Handling Code
Temp. Range
Package Code

Package Code
A : SO T -2 3
Temp. Range
C : 0 to 7 0 C
Handling Code
TR : Tape & R eel

°

APM2300 A : 2300 X

X - Date Code

Symbol

Parameter Rating Unit

V

DSS

Drain-Source Voltage 20

V

GSS

Gate-Source Voltage ±16

V

I

D

*

Maximum Drain Current – Continuous 6

I

DM

Maximum Drain Current – Pulsed 20

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

G

D

S

Top View of SOT-23

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002

www.anpec.com.tw2

APM2300

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Absolute Maximum Ratings Cont. (T

A

= 25°C unless otherwise noted)

Symbol

Parameter Rating Unit

TA=25°C

1.25

P

D

Maximum Power Dissipation

T

A

=100°C

0.5

W

T

J

Maximum Junction Temperature 150

°

C

T

STG

Storage Temperature Range -55 to 150

°

C

R

θ

jA

Thermal Resistance – Junction to Ambient 100

°

C/W

APM2300

Symb ol Parameter Test Condition

Min. Typ. Max.

Unit

Static

BV

DSS

Drain-Source Breakdown
Voltage

V

GS

=0V , IDS=250µA

20 V

I

DSS

Zero Gate Volta g e Drain
Current

V

DS

=16V , VGS=0V 1

µ

A

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=250µA

0.6 1.5

V

I

GSS

Gate Leakage Current

V

GS

=±16V , VDS=0V

±

100

nA

VGS=10V , IDS=3.5A

35 50

VGS=4.5V , IDS=2.8A

45 60

R

DS(ON)

a

Drain-Source On-state
Resistance

V

GS

=2.5V , IDS=2A

115 125

m

Ω

V

SD

a

Diode Forward Voltage ISD=1.25A , VGS=0V

0.6 1.3

V

Dynamic

b

Q

g

Total G a te Char g e

13 25

Q

gs

Gate-S o urc e C ha rg e

3

Q

gd

Gate-D ra in C h a rge

V

DS

=12V , IDS= 3.5A

V

GS

=4.5V

4.5

nC

t

d(ON)

Turn-on De lay Tim e

612

T

r

Turn-on R ise Time

510

t

d(OFF)

Turn-off Delay Time

16 40

T

f

Turn-off Fall Time

V

DD

=10 V , IDS=1A ,

V

GEN

=4.5V , RG=0.2

Ω

520

ns

C

iss

Input Cap a c itance

450

C

oss

Output Capacitance

100

C

rss

Reverse Transfer Capacitance

V

GS

=0V

V

DS

=15V

Frequency=1.0MHz

60

pF

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002

www.anpec.com.tw3

APM2300

Typical Characteristics

0.0 0.5 1.0 1.5 2.0 2.5

0

5

10

15

20

ID-Drain Current (A)

Transfer Characteristics

TJ=-55°C

TJ=25°C

TJ=125°C

VGS - Gate-to-Source V oltage (V)

-50 -25 0 25 50 75 100 125 150

0.00

0.25

0.50

0.75

1.00

1.25

1.50

Threshold Voltage vs. Junction Temperature

Tj - Junction T emperature (°C)

VGS(th)-Threshold Voltage (V)

(Normalized)

IDS=250uA

0 5 10 15 20

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

RDS(ON)-On-Resistance (Ω)

On-Resistance vs. Drain Current

VGS=4.5V

ID - Drain Current (A)

VGS=10V

012345

0

4

8

12

16

20

VGS=2V

Output Characteristics

ID-Drain Current (A)

VGS=4,5,6,7,8,9,10V

VGS=3V

VDS - Drain-to-Source V oltage (V)