Datasheet APM2300AC-TR Datasheet (ANPEC)

N-Channel Enhancement Mode MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

APM2300

Pin Description

Ordering and Marking Information

Features

Applications

Absolute Maximum Ratings

(TA = 25°C unless otherwise noted)

• 20V/6A , R

DS(ON)

=35mΩ(typ.) @ VGS=10V

R

DS(ON)

=45mΩ(typ.) @ VGS=4.5V

R

DS(ON)

=115mΩ(typ.) @ VGS=2.5V

••

••

• Super High Dense Cell Design for Extremely

Low R

DS(ON)

••

••

• Reliable and Rugged

••

••

• SOT-23 Package

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

APM 2300

Handling Code
Temp. Range
Package Code

Package Code
A : SO T -2 3
Temp. Range
C : 0 to 7 0 C
Handling Code
TR : Tape & R eel

°

APM2300 A : 2300 X

X - Date Code

Symbol

Parameter Rating Unit

V

DSS

Drain-Source Voltage 20

V

GSS

Gate-Source Voltage ±16

V

I

D

*

Maximum Drain Current – Continuous 6

I

DM

Maximum Drain Current – Pulsed 20

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

G

D

S

Top View of SOT-23

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002

www.anpec.com.tw2

APM2300

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Absolute Maximum Ratings Cont. (T

A

= 25°C unless otherwise noted)

Symbol

Parameter Rating Unit

TA=25°C

1.25

P

D

Maximum Power Dissipation

T

A

=100°C

0.5

W

T

J

Maximum Junction Temperature 150

°

C

T

STG

Storage Temperature Range -55 to 150

°

C

R

θ

jA

Thermal Resistance – Junction to Ambient 100

°

C/W

APM2300

Symb ol Parameter Test Condition

Min. Typ. Max.

Unit

Static

BV

DSS

Drain-Source Breakdown
Voltage

V

GS

=0V , IDS=250µA

20 V

I

DSS

Zero Gate Volta g e Drain
Current

V

DS

=16V , VGS=0V 1

µ

A

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=250µA

0.6 1.5

V

I

GSS

Gate Leakage Current

V

GS

=±16V , VDS=0V

±

100

nA

VGS=10V , IDS=3.5A

35 50

VGS=4.5V , IDS=2.8A

45 60

R

DS(ON)

a

Drain-Source On-state
Resistance

V

GS

=2.5V , IDS=2A

115 125

m

Ω

V

SD

a

Diode Forward Voltage ISD=1.25A , VGS=0V

0.6 1.3

V

Dynamic

b

Q

g

Total G a te Char g e

13 25

Q

gs

Gate-S o urc e C ha rg e

3

Q

gd

Gate-D ra in C h a rge

V

DS

=12V , IDS= 3.5A

V

GS

=4.5V

4.5

nC

t

d(ON)

Turn-on De lay Tim e

612

T

r

Turn-on R ise Time

510

t

d(OFF)

Turn-off Delay Time

16 40

T

f

Turn-off Fall Time

V

DD

=10 V , IDS=1A ,

V

GEN

=4.5V , RG=0.2

Ω

520

ns

C

iss

Input Cap a c itance

450

C

oss

Output Capacitance

100

C

rss

Reverse Transfer Capacitance

V

GS

=0V

V

DS

=15V

Frequency=1.0MHz

60

pF

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002

www.anpec.com.tw3

APM2300

Typical Characteristics

0.0 0.5 1.0 1.5 2.0 2.5

0

5

10

15

20

ID-Drain Current (A)

Transfer Characteristics

TJ=-55°C

TJ=25°C

TJ=125°C

VGS - Gate-to-Source V oltage (V)

-50 -25 0 25 50 75 100 125 150

0.00

0.25

0.50

0.75

1.00

1.25

1.50

Threshold Voltage vs. Junction Temperature

Tj - Junction T emperature (°C)

VGS(th)-Threshold Voltage (V)

(Normalized)

IDS=250uA

0 5 10 15 20

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

RDS(ON)-On-Resistance (Ω)

On-Resistance vs. Drain Current

VGS=4.5V

ID - Drain Current (A)

VGS=10V

012345

0

4

8

12

16

20

VGS=2V

Output Characteristics

ID-Drain Current (A)

VGS=4,5,6,7,8,9,10V

VGS=3V

VDS - Drain-to-Source V oltage (V)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002

www.anpec.com.tw4

APM2300

Typical Characteristics

-50 -25 0 25 50 75 100 125 150

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

RDS(ON)-On-Resistance (Ω)

(Normalized)

On-Resistance vs. Junction T emperature

VGS=4.5V
ID=2.8A

TJ - Junction Temperature (°C)

0 5 10 15 20

0

125

250

375

500

625

750

VDS - Drain-to-Source V oltage (V)

Capacitance

Capacitance (pF)

Ciss

Coss
Crss

2345678910

0.030

0.035

0.040

0.045

0.050

0.055

0.060

0.065

0.070

VGS - Gate-to-Source V oltage (V)

RDS(ON)-On-Resistance (Ω)

ID=4A

On-Resistance vs. Gate-to-Source Voltage

0.0 2.5 5.0 7.5 10.0 12.5 15.0

0

1

2

3

4

5

6

7

8

9

10

Gate Charge

QG - Gate Charge (nC)

VGS-Gate-Source Voltage (V)

VDS=12V
ID=3.5A

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002

www.anpec.com.tw5

APM2300

1E-4 1E-3 0.01 0.1 1 10 10 0

0.01

0.1

1

Typical Characteristics

Power (W)

Single Pulse Power

Time (sec)

Square Wave Pulse Duration (sec)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

1

10

20

Source-Drain Diode Forward Voltage

IS-Source Current (A)

TJ=150°C

TJ=25°C

VSD -Source-to-Drain V oltage (V)

Normalized Effective Transient

Thermal Impedance

Normalized Thermal Transient Impedence, Junction to Ambient

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=100°C/W

3.TJM-TA=PDMZthJA

Duty Cycle=0.5

D=0.2

D=0.1

D=0.05

D=0.02

SINGLE PULSE

0.01 0.1 1 10 100

0

2

4

6

8

10

12

14

D=0.01

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002

www.anpec.com.tw6

APM2300

Packaging Information

D

E H

S

e

A

A1

L

C

B

3

2

1

Millimeters Inches

Dim

Min. Max. Min. Max.

A 1.00 1.30 0.039 0.051

A1 0.00 0.10 0.000 0.0 04

B 0.35 0.51 0.014 0.020
C 0.10 0.25 0.004 0.010
D 2.70 3.10 0.106 0.122
E 1.40 1.80 0.055 0.071
e 1.90 BSC 0.075 BSC
H 2.40 3.00 0.094 0.118
L 0.37 0.0015

SOT-23

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002

www.anpec.com.tw7

APM2300

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Packaging 3000 devices per reel for SOT-23

Reflow Condition

(IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Classification Reflow Profile s

Convection or IR/ Convection VPR

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)

120 seconds max.

Temperature maintained above 183°C

60 ~ 150 seconds

Time within 5°C of actual peak
temperature

10 ~ 20 seconds 60 seconds

Peak temperature range

220 +5/-0°C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C

Ramp-dow n ra te

6 °C /second max. 10 °C /second max.

Time 25°C to peak temperature

6 minutes max.

Package Reflow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bags

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Pre-heat temperature

183 C

Peak temperature

Time

°

temperature

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002

www.anpec.com.tw8

APM2300

Carrier Tape & Reel Dimensions

A

J

B

T2

T1

C

t

Ao

E

W

Po

P

Ko

Bo

D1

D

F

P1

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Reliability test program

Application

A B C J T1 T2 W P E

178±172 ± 1.0 13.0 + 0.2 2.5 ± 0.15 8.4 ± 2 1.5± 0.3

8.0+ 0.3

- 0.3

4 ± 0.1 1.75± 0.1

F D D1 Po P1 Ao Bo Ko t

SOT-23

3.5 ± 0.05 1.5 +0.1 1.5 +0.1 4.0 ± 0.1 2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1 1.4± 0.1 0.2±0.03

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002

www.anpec.com.tw9

APM2300

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

Cover Tape Dimensions

Carrier Width

8

Cover Tape Width

5.3

(mm)