Analog Microelectronics AME8817AEDZADJ, AME8817AEDZ500, AME8817AEDZ475, AME8817AEDZ330, AME8817AEDZ250 Datasheet

Analog Microelectronics, Inc.

1

AME8817

1.5A CMOS LDO

PRELIMINARY

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n T ypical Application

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n Functional Block Diagram

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n Features

l Very Low Dropout V oltage
l Guaranteed 1.5A Output
l Accurate to within 1.5%
l 35µA Quiescent Current Typically
l Over-Temperature Shutdown
l Current Limiting
l Short Circuit Current Fold-back
l Noise Reduction Bypass Capacitor
l Power Good Output
l Power-Saving Shutdown Mode
l Space-Saving DDPAK-7 Package

l Low T emperature Coef ficient

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n General Description

The AME8817 family of positive, linear regulators fea­ture low quiescent current (35µA typ.) with low dropout
voltage, making them ideal for battery applications.

Output voltages are set at the factory and trimmed to

1.5% accuracy.
These rugged devices have both thermal shutdown, and

current fold-back to prevent device failure under the "worst"
of operating conditions.

In applications requiring a low noise, regulated supply,
place a 1000pF capacitor between Bypass and Ground.

An additional feature is a "Power Good" detector, which
pulls low when the output is out of regulation.

The AME8817 is stable with an output capacitance of

4.7µF or greater .

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n Applications

l Instrumentation
l Portable Electronics
l Wireless Devices
l PC Peripherals
l Battery Powered Widgets

Overcurrent

Shutdown

Thermal

Shutdown

AMP

GND

OUTIN

R1

R2

1.24V

PG

EN

BYP (or ADJ)

AME8817

C3

4.7µF

C1

1µF

GND

OUT

5V

PG

BYP

IN

C2

1nF

EN

OUT

IN

Analog Microelectronics, Inc.

2

1.5A CMOS LDO

AME8817

PRELIMINARY

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n Pin Configuration

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n Ordering Information

1. EN 5. V

OUT

2. PG 6. V

OUT

3. V

IN

7. BYP

4. GND

DDPAK-7 (TO-263) Top View

12

76543 12

76543

1. EN 5. V

OUT

2. PG 6. V

OUT

3. V

IN

7. ADJ

4. GND

AME8817AEDZXXX AME8817BEDZXXX

Package Ty pe

DDPAK-7

1.50 AME8817AEDZ150

AME8817
AEDZ150

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1.80 AME8817AEDZ180

AME8817
AEDZ180

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2.50 AME8817AEDZ250

AME8817
AEDZ250

yyww

3.30 AME8817AEDZ330

AME8817
AEDZ330

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4.75 AME8817AEDZ475

AME8817
AEDZ475

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5.00 AME8817AEDZ500

AME8817
AEDZ500

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ADJ AME8817BEDZADJ

AME8817
BEDZADJ

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Please consult AME sales office or authorized Rep./Distributor for other output voltages, package types or pin configurations.

Output

Voltage

MARKING

Analog Microelectronics, Inc.

3

AME8817

1.5A CMOS LDO

PRELIMINARY

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Absolute Maximum Ratings:

Parameter Maximum Unit

Inpu t V o ltage 8 V

Output Current

PD / (VIN - VO)

mA

Output V ol tage GND - 0.3 to V

IN

+ 0.3 V

ESD Cl assifi catio n B

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R ecom m ended operat ing Condit ions:

Parameter Rating Unit

Ambi ent Temperature Range -40 to +85

o

C

Juncti on Temperature -40 to +125

o

C

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Thermal Information

Maximum Unit

60

o

C / W

2.7 W

150

o

C

300

o

C

Caution: S tress ab ove t he li sted abs ol ut e rat i ng m ay c aus e permanent dam age t o t he device

Max i m um Lead Temperature ( 10 Sec)

Parame ter

Thermal Resistance (

θ

jc

)

Internal Power Dis sipati on (P

D

) (∆T = 10 0oC)

Max i m um Junc t i on Temperature

Analog Microelectronics, Inc.

4

1.5A CMOS LDO

AME8817

PRELIMINARY

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n Electrical Specifications

Parame ter Symb o l Mi n Typ Max Uni ts

Input Voltage V

IN

Note 1 7 V

Output V oltage A c curac y V

O

-1. 5 1. 5 %

1.5V <= V

ONOM

<= 2. 0V 1000

2.0V <V

ONOM

<=2.8V 800

2.8V <V

ONOM

<3.8V 600

Output C urrent I

O

1500 mA

Current Limit I

LIM

1500 2000 mA

Short Circuit Current I

SC

750 1500 mA

Quies cent Current I

Q

35 50

µ

A

Ground Pin Current I

GND

35

µ

A

V

O

< 2.0V -0.15 0.15 %

4.0V > V

O

>= 2.0V -0.1 0. 02 0.1 %

Vo > =4.0V -0.4 0.2 0.4 %

Load Regulation REG

LOAD

0.2 1 %

Over Temerature Shutdown OTS 150

o

C

Over Teme rat ure Hys t e ris is OTH 30

o

C

V

O

Temperature Coefficient TC 30

ppm/

o

C

f=1kHz 50

f=10kHz 20 dB

f=100kHz 15

f=1kHz 75

f=10kHz 55 dB

f=100kHz 30

Co=4.7µF30

Co=100µF20

Co=4.7µF30

Co=100µF20

ADJ Input Bias Current I

ADJ

1mA

ADJ Reference Voltage V

REF

1.223 1. 242 1.261 V

V

EH

2.0 Vin V

V

EL

00.4V

I

EH

0.1

µ

A

I

EL

0.5

µ

A

Shut down S upply Current I

SD

0.5 1

µ

A

Output Under V oltage V

UV

85 % V

O(NOM)

Output O ver Voltage V

OV

115 % V

O(NOM)

PG Leak age Current I

LC

1mA

PG V oltage Rating V

PG

7V

PG V oltage Low V

OL

0.4 V

Note1:V

IN (m in)=VOUT+VDROPOU T

IO=1m A

V

IN=VO

+1 to VO+2

TA = 25oC unless otherwise noted

Test Condition

I

O

=1m A to 1.5A

I

O

=1500m A

V

O=VONOM

-2. 0%

VO<0.4V

I

O

=0mA

I

O

=1m A to 1.5A

Dropout Voltage

See

chart

mV

V

O

>1.2V

V

O

>1.2V

I

O

=1m A to 1500m A

EN Input Threshold

V

IN

=2.7V to 7V

V

IN

=2.7V to 7V

I

O

=100m A CO=4.7µF

Power Sup ply Rejec tion

I

O

=100m A CO=4.7µF

C

BY P

=0.01µF

PSRR

EN Input Bias Current

V

EN=VIN

, VIN=2.7V to 7V

V

EN=VOV

, VIN=2.7V to 7V

V

IN

=5V, VO=0V, VEN<V

EL

I

SINK

=500µA

Note1
Note1

V

PG

=7V

V

O

in regulation

f=10Hz to 100k Hz

I

O

=10m A , C

BY P

=0.01µF

mVrms

Output V oltage Nois e eN

f=10Hz to 100k Hz

I

O

=10m A , C

BY P

=0µF

mVrms

V

DROPOU T

Output V oltage Nois e eN

Power Sup ply Rejec tion

PSRR

Line Regulation REG

LINE

Analog Microelectronics, Inc.

5

AME8817

1.5A CMOS LDO

PRELIMINARY

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n Detailed Description

The AME8817 family of CMOS regulators contain a
PMOS pass transistor, voltage reference, error amplifier ,
over-current protection, and thermal shutdown.

The P-channel pass transistor receives data from the
error amplifier, over-current shutdown, and thermal pro­tection circuits. During normal operation, the error am­plifier compares the output voltage to a precision refer­ence. Over-current and Thermal shutdown circuits be­come active when the junction temperature exceeds
150oC, or the current exceeds 2.2A. During thermal shut­down, the output voltage remains low. Normal operation
is restored when the junction temperature drops below
110oC.

The AME8817 behaves like a current source when the
load reaches 2.2A. However, if the load impedance
drops below 0.3 ohms, the current drops back to 600mA
to prevent excessive power dissipation. Normal op­eration is restored when the load resistance exceeds

0.75 ohms.

All capacitors should be placed in close proximity to
the pins. A "Quiet" ground termination is desirable.
This can be achieved with a "Star" connection.

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n External Capacitors

The AME8817 is stable with an output capacitor to ground
of 4.7µF or greater. Ceramic capacitors have the lowest
ESR, and will offer the best AC performance. Conversely ,
Aluminum Electrolytic capacitors exhibit the highest
ESR, resulting in the poorest AC response. Unfortunately,
large value ceramic capacitors are comparatively expen­sive. One option is to parallel a 0.1µF ceramic capacitor
with a 10µF Aluminum Electrolytic. The benefit is low
ESR, high capacitance, and low overall cost.

A second capacitor is recommended between the input
and ground to stabilize Vin. The input capacitor should
be at least 0.1µF to have a beneficial effect.

A third capacitor can be connected between the BY­PASS pin and GND. This capacitor can be a low cost
Polyester Film variety between the value of 0.001 ~

0.01µF. A larger capacitor improves the AC ripple re-
jection, but also makes the output come up slowly . This
"Soft" turn-on is desirable in some applications to limit
turn-on surges.

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n Enable

When pulled low, the PMOS pass transistor shuts off,
and all internal circuits are powered down. In this state,
the quiescent current is less than 1µA. This pin behaves
much like an electronic switch.

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n Power Good

The AME8817 includes the Power Good feature. Nor­mally , the PG pin is "Floating", however, when the out­put is not within ±15% of the specified voltage, it pulls
low. This can occur under the following conditions:

1) Input Voltage too low.

2) During Over-Temperature.

3) During Over-Current.

4) If output is pulled up.

Analog Microelectronics, Inc.

6

1.5A CMOS LDO

AME8817

PRELIMINARY

34.5

35

35.5

36

36.5

37

37.5

38

38.5

0 0.25 0.5 0.75 1 1.25 1.5

Ground Current vs. Load Current

Ground Current (

µ

µµ

µ

A)

Load Current (mA)

VIN = 2.5V

V

OUT

= 1.5V

30

31

32

33

34

35

36

37

38

39

050100150

Ground Current vs. Temperature

Ground Current (

µ

µµ

µ

A)

Temperature (OC)

I

OUT

= 1.8mA

V

OUT

= 1.8V

V

IN

= 5V

10

15

20

25

30

35

40

45

50

2345678

Ground Current vs. V

IN

Ground Current (

µ

µµ

µ

A)

VIN (V)

I

OUT

= 140mA

V

OUT

= 1.5V

0

0.2

0.4

0.6

0.8

1

1.2

0 0.3 0.6 0.9 1.2 1.5 1.8

Dropout Voltage vs. I

LOAD

Dropout Voltage (V)

I

LOAD

(A)

1.8

1.5

2.0

2.1

2.8

3.3

0

0.2

0.4

0.6

0.8

1

02468

Dropout Voltage vs. V

OUT

Dropout Voltage (V)

V

OUT

(V)

I

LOAD

=1.5A

I

LOAD

=1.0A

I

LOAD

=0.5A

Analog Microelectronics, Inc.

7

AME8817

1.5A CMOS LDO

PRELIMINARY

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

2345678

Short Circuit Current VS. V

IN

Short Circuit Current (A)

VIN (V)

CIN = 4.7µF

C

OUT

= 4.7µF

Overtemperature Shutdown

V

OUT

1V/DIV I

OUT

1A/DIV

Time 100mS/DIV

0V

0A

VIN = 4V

C

IN

= 4.7µF

C

OUT

= 4.7µF

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

2345678

Current Limit Vs. V

IN

Current Limit (A)

VIN (V)

CIN = 4.7µF

C

OUT

= 4.7µF

V

OUT

= 1.8V

Current Limit Response

I

LOAD

1A/DIV V

OUT

1V/DIV

Time 1mS/DIV

I

LIM

I

SC

0A

0V

VIN = 5V

C

IN

= 4.7µF

C

OUT

= 4.7µF

Transient Line Response

V

OUT

(50mV/DIV)

V

IN

(2V/DIV)

Time (20

µµµµ

S/DIV)

CIN = 4.7µF

C

OUT

= 4.7µF

T

R

= TF = 1µS

VOUT = 1.5V

0V

Load Step 40mA to 1.5A

I

LOAD

1A/DIVV

OUT

10mV/DIV

Time 500

µµµµ

S/DIV

0A

CIN = 4.7µF

C

OUT

= 4.7µF

V

IN

= 4.0V

V

OUT

= 1.8V

Analog Microelectronics, Inc.

8

1.5A CMOS LDO

AME8817

PRELIMINARY

0.01

0.1

1

10

100

1000

10000

0 250 500 750 1 000 1250 1500

ESR (Ω

ΩΩ

Ω)

Stable Region

Untested Region

Unstable Region

ILOAD (mA)

CL=5µF

Stability vs. ESR vs I

LOAD

0.01

0.1

1

10

100

1000

10000

0 250 500 750 1000 1250 1500

ILOAD (mA)

Stable Region

Untested Region

Unstable Region

ESR (

Ω

ΩΩ

Ω

)

CL=2µF

Stability vs. ESR vs I

LOAD

0.001

0.01

0.1

1

10

100

1000

10000

0 250 500 750 1000 1250 1500

Stable Region

Untested Region

Unstable Region

ILOAD (mA)

ESR (Ω

ΩΩ

Ω)

CL=10µF

Stability vs. ESR vs I

LOAD

Analog Microelectronics, Inc.

9

AME8817

1.5A CMOS LDO

PRELIMINARY

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n Package Dimension

TO-263 (DDPAK-7)

MIN MAX MIN MAX
A 10.05 10.31 0.396 0.406
B 8.2 8 8.53 0.326 0.336
C 4 .3 1 4 .5 7 0.170 0.180

D 0.6 6 0 .9 1 0.02 6 0.0 3 6

E 1.1 4 1.40 0.045 0.055

G
H 14.73 15.75 0.580 0.620
K 1 .4 0 1.6 8 0 .0 00 0.0 6 6

L 0.0 0 0.2 5 0 .0 55 0.0 1 0

M 2.4 9 2 .7 4 0.0 0 0 0 .1 0 8

N 0.4 3 0.5 8 0 .0 9 8 0.0 2 3

P 2.2 9 2.7 9 0.0 1 7 0.1 10

R

0

o

8

?

0

o

8

?

S 2.4 1 2 .6 7 0.0 9 5 0 .1 0 5

W

1.27 ref 0.050 ref

0.25 0.01

SY MBOLS

MILLIMETERS INCHES

Life Support Policy:

These products of Analog Microelectronics, Inc. are not authorized for use as critical components in life-

support devices or systems, without the express written approval of the president

of Analog Microelectronics, Inc.

Analog Microelectronics, Inc. reserves the right to make changes in the circuitry and specifications of its

devices and advises its customers to obtain the latest version of relevant information.

 Analog Microelectronics, Inc. , August 2001

Document: 2013-doc-006-0806

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