Analog Microelectronics AME8814EEEY, AME8814DEEY, AME8814CEEY, AME8814BEEY, AME8814AEEY Datasheet

...
Analog Microelectronics, Inc.
1
AME8803/8814
300mA CMOS LDO
nn
nn
n T ypical Application
nn
nn
n Functional Block Diagram
nn
nn
n Features
nn
nn
n General Description
The AME8803 family of positive, linear regulators fea­ture low quiescent current (30µA typ.) with low dropout voltage, making them ideal for battery applications. The space-saving SOT-23-6 package is attractive for "Pocket" and "Hand Held" applications.
These rugged devices have both Thermal Shutdown, and Current Fold-back to prevent device failure under the "Worst" of operating conditions.
An additional feature is a "Power Good" detector, which pulls low when the output is out of regulation. In appli­cations requiring a low noise, regulated supply , place a 1000pF capacitor between Bypass and ground.
The AME8803 is stable with an output capacitance of
2.2µF or greater.
nn
nn
n Applications
l Instrumentation l Portable Electronics l Wireless Devices l Cordless Phones l PC Peripherals l Battery Powered Widgets l Electronic Scales
AMP
GND
OUT
IN
R1
R2
PG
Overcurrent
Shutdown
Thermal
Shutdown
EN
V
ref
=1.215V
V
ref
x90%
V
ref
x110%
BYP
AME8803
OUT
IN
C3
2.2
µ
F
C1
1
µ
F
GND
OUT
5V
PG
BYP
IN
C2
1nF
EN
Analog Microelectronics, Inc.
2
300mA CMOS LDO
AME8803/8814
nn
nn
n Pin Configuration
nn
nn
n Ordering Information
AME8803
SOT-26 T op View
1. V
IN
4. P G
2. GND 5. BYP
3. E N 6. V
OUT
564
12 3
564
12 3
1. EN 4. V
OUT
2. GND 5. GND
3. BYP 6. V
IN
AME8814
SOT-26 W T op V iew
Pa rt Number Marking Output Packa ge
Operating
Tem p.
AME8803AE EY AA Pww 3.3V SOT-26
-40
O
C to +85OC
AME8803BEEY AAQww 3.0V SOT - 26
-40
O
C to +85OC
AME8803CEEY AARww 2.8V SOT-26
-40
O
C to +85OC
AME8803DEEY AASww 2.5V SOT-26
-40
O
C to +85OC
AME8803EEEY AAT ww 3.8V SOT - 26
-40
O
C to +85OC
AME8803FEEY ABQww 3.6V SOT-26
-40
O
C to +85OC
AME8803GEEY ACHww 3.5V SOT-26
-40
O
C to +85OC
AME8803HEEY AGKww 2.7V SOT-26
-40
O
C to +85OC
AME8803IEEY AEQww 3.4V SOT-26
-40
O
C to +85OC
AME8803JEEY AGSww 2.85V SOT-26
-40
O
C to +85OC
AME8803KEEY AHUww 3.7V SOT-26
-40
O
C to +85OC
AME8803LEEY AJKww 1.5V SOT-26
-40
O
C to +85OC
AME8803MEEY AJLww 1.8V SOT-26
-40
O
C to +85OC
AME8803NEEY ALAww 2.9V SOT-26
-40
O
C to +85OC
AME8803OEEY ALBww 3.1V SOT-26
-40
O
C to +85OC
Analog Microelectronics, Inc.
3
AME8803/8814
300mA CMOS LDO
Pa rt Number Marking Output Package Opera ting Temp.
AME8814AE EY AIEww 3.3V SOT-26
-40
O
C to +85OC
AME8814BEEY AIFww 3.0V SOT-26
-40
O
C to +85OC
AME8814CEEY AIGww 2.8V SOT-2 6
-40
O
C to +85OC
AME8814DEEY AIHww 2.5V SOT -2 6
-40
O
C to +85OC
AME8814EEEY AIIww 3.8V SOT - 2 6
-40
O
C to +85OC
AME8814FEEY AIJw w 3.6V SOT-26
-40
O
C to +85OC
AME8814GEEY AIKww 3.5V SOT-2 6
-40
O
C to +85OC
AME8814HEEY AILww 2.7V SOT-26
-40
O
C to +85OC
AME8814IEEY AIMww 3.4V SOT-2 6
-40
O
C to +85OC
AME8814JEEY AIN ww 2.85V SOT-26
-40
O
C to +85OC
AME8814KEEY AIOww 3.7V SOT- 2 6
-40
O
C to +85OC
AME8814LEEY AJDww 1.5V SOT-26
-40
O
C to +85OC
AME8814MEEY AJEww 1.8V SOT-2 6
-40
O
C to +85OC
AME8814NEEY AKYww 2.9V SOT -2 6
-40
O
C to +85OC
AME8814OEEY AKZww 3.1V SOT-2 6
-40
O
C to +85OC
nn
nn
n Ordering Information
Please consult AME s al es offic e or authorized Rep./ Distri but or for other output voltage and package ty pe availabilit y.
Analog Microelectronics, Inc.
4
300mA CMOS LDO
AME8803/8814
nnnn
A bsolute Maximum Ratings:
Parameter Maximum Unit
Input Volt age 8 V
Output Current P
D
/ (VIN - VO)mA
Output V olt age GND - 0.3 to V
IN
+ 0.3 V
ESD Classification B
nnnn
Recommended operating Conditions:
Parameter Rating Unit
Am bient Temperature Range -40 to +85
o
C
Junction Temperature -40 to +125
o
C
nnnn
Thermal Information
Paramete r Packa ge Maximum Unit
Thermal Resistance (
θ
ja
) SO T-26 260
Thermal Resistance (
θ
ja
) SO T-26W 260
Internal Power Dissipation (P
D
)
(∆T = 100
o
C)
SO T-26 380
Internal Power Dissipation (P
D
)
(∆T = 100
o
C)
SO T-26W 380
Max imum Junc ti on Temperature 150
Max imum Lead Temperature ( 10 Sec) 300
Caution: S tres s ab ove t he lis t ed abs olut e rating m ay c aus e perm anent dam age to t he devic e
o
C / W
mW
o
C
Analog Microelectronics, Inc.
5
AME8803/8814
300mA CMOS LDO
nn
nn
n Electrical Specifications
Pa rameter Symbol Min Typ Max Units
Input Volt age V
IN
Note 1 7 V
Output V oltage Ac curacy V
O
-1.5 1.5 %
1.2V <V
O(NOM)
<=2.0V 1300
Dropout Volt age V
DROPOUT
2.0V < V
O(NOM)
<=2.8V 400
2.8V < V
O(NOM)
300
Output Current I
O
300 mA
Current Limit I
LIM
300 450 mA
Short Circ uit Current I
SC
150 300 mA
Quies c ent Current I
Q
30 50
µ
A
Ground Pin Current I
GND
35
µ
A
V
O
< 2. 0V -0.15 0.15 %
2.0V < =V
O
< 4.0V -0.1 0.02 0.1 %
4.0V < = V o
-0. 4 0. 2 0 .4 %
Load Regulation RE G
LOAD
-1 0.2 1 %
Over Temerature Shutdown OTS 150
o
C
Over Temerat ure Hyst e risis OTH 30
o
C
V
O
Temperature Coefficient TC 30
ppm/
o
C
f=1kHz 50
PSRR f=10kHz 20 dB
f=100kHz 15
V
EH
2.0 Vin V
V
EL
00.4V
I
EH
0.1
µ
A
I
EL
0.5
µ
A
Shut down S uppl y Current I
SD
0.5 1
µ
A
Shut down Output V olt age V
O,SD
00.4V 85 75
115 125
PG Leak age Current I
LC
1
µ
A
PG V olt age Rati ng V
PG
7V
PG V olt age Low V
OL
0.4 V
Note1:V
IN (m in)=VOUT+VDROPOUT
VO<0.8V
I
O
=0mA
Line Regulation REG
LIN E
TA = 25oC unless otherwise not ed
Test Condition
I
O
=1mA
See
chart
mV
V
O
>1.2V
V
O
>1.2V
I
O
=300m A
V
O=VONOM
-2.0%
I
O
=1m A to 300m A
I
O
=1m A to 300m A
I
O
=1mA
V
IN=VO
+1 to VO+2
EN Input Threshold
V
IN
=2.7V to 7V
EN Input B i as Current
Power S upply Rejec ti on
I
O
=100m A
C
O
=2.2µF
Output V oltage Noise eN
f=10Hz t o 100k Hz
I
O
=10mA
Co=2.2µF
V
IN
=5V, VO=0V, VEN<V
EL
IO=0.4mA, VEN<V
EL
VIN=2.7V to 7V
V
EN=VIN
, VIN=2.7V to 7V
V
EN
=0V, VIN=2.7V to 7V
30
µ
Vrms
%V
O(NOM)
1.2V < = V o < 2. 5V
Output Under V olt age V
UV
2.5V < =V o < = 5. 0V %V
O(NOM)
1.2V < = V o < 2. 5V
V
PG
=7V
V
O
in regulation
I
SIN K
=0.4mA
Output O ver Volt age V
OV
2.5V < =V o < = 5. 0V
Analog Microelectronics, Inc.
6
300mA CMOS LDO
AME8803/8814
nn
nn
n Detailed Description
The AME8803 family of CMOS regulators contain a PMOS pass transistor, voltage reference, error ampli­fier, over-current protection, thermal shutdown, and Power Good detection circuitry.
The P-channel pass transistor receives data from the error amplifier, over-current shutdown, and thermal pro­tection circuits. During normal operation, the error am­plifier compares the output voltage to a precision refer­ence. Over-current and Thermal shutdown circuits be­come active when the junction temperature exceeds 150oC, or the current exceeds 300mA. During thermal shutdown, the output voltage remains low. Normal op­eration is restored when the junction temperature drops below 120oC.
The AME8803 switches from voltage mode to current mode when the load exceeds the rated output current. This prevents over-stress. The AME8803 also incor­porates current foldback to reduce power dissipation when the output is short circuited. This feature becomes active when the output drops below 0.8volts, and re­duces the current flow by 65%. Full current is restored when the voltage exceeds 0.8 volts.
A third capacitor can be connected between the BY­PASS pin and GND. This capacitor can be a low cost Polyester Film variety between the value of 0.001 ~
0.01µF. A larger capacitor improves the AC ripple re- jection, but also makes the output come up slowly . This "Soft" turn-on is desirable in some applications to limit turn-on surges.
All capacitors should be placed in close proximity to the pins. A "Quiet" ground termination is desirable. This can be achieved with a "Star" connection.
nn
nn
n Enable
The Enable pin normally floats high. When actively, pulled low, the PMOS pass transistor shuts off, and all internal circuits are powered down. In this state, the quiescent current is less than 1µA. This pin behaves much like an electronic switch.
nn
nn
n Power Good
The AME8803 includes the Power Good feature. Nor­mally, Pin 4 is "Floating", however, when the output is not within ±10% of the specified voltage, it pulls low. This can occur under the following conditions:
1) Input Voltage too low.
2) During Over-Temperature.
3) During Over-Current.
4) If output is pulled up.
nn
nn
n External Capacitors
The AME8803 is stable with an output capacitor to ground of 2.2µF or greater. Ceramic capacitors have the lowest ESR, and will offer the best AC performance. Conversely, Aluminum Electrolytic capacitors exhibit the highest ESR, resulting in the poorest AC response. Unfortunately , large value ceramic capacitors are com­paratively expensive. One option is to parallel a 0.1µF ceramic capacitor with a 10µF Aluminum Electrolytic. The benefit is low ESR, high capacitance, and low over­all cost.
A second capacitor is recommended between the input and ground to stabilize Vin. The input capacitor should be at least 0.1µF to have a beneficial effect.
Analog Microelectronics, Inc.
7
AME8803/8814
300mA CMOS LDO
0
50
100
150
200
250
300
2.5 2.75 3 3.2 5 3.5 3.75 4
Drop Out Voltage vs Output Voltage
Output Voltage (V)
Drop Out Voltage (mV)
I
LOAD
=300mA
I
LOAD
=200mA
I
LOAD
=100mA
0
50
100
150
200
250
0 50 100 150 200 250 300
Drop Out Voltage vs Load Current
Load Current (mA)
Dropout Voltage (mV)
Top to bottom
V
OUT
=2.5V
V
OUT
=2.8V
V
OUT
=3.0V
V
OUT
=3.3V
V
OUT
=3.5V
V
OUT
=3.8V
Chip Enable Transient Response
Output (1V/DIV) Enable (2V/DIV)
TIME ( 1mS/DIV)
CL=2µF R
L
=10
C
BYP
=1000pF
0
0
0
0
Chip Enable Transient Response
TIME ( 1mS/DIV)
CL=2µF R
L
=10
Output (1V/DIV) Enable (2V/DIV)
0
5
10
15
20
25
30
35
40
45
012345678
Ground Current vs. Input Voltage
Ground Current (
µ
µµ
µ
A)
Input Voltage (V)
85OC
25OC
Load Step ( 1mA-300mA)
I
L
(200mA/DIV) Vo(5mV/DIV)
TIME( 20mS/DIV)
CL=2.2µF
C
IN
=2.2µF
Output
I
Load
0
Analog Microelectronics, Inc.
8
300mA CMOS LDO
AME8803/8814
-80
-70
-60
-50
-40
-30
-20
-10
1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05
PSRR ( dB)
Power Supply Rejection Ratio
Frequency (Hz)
CL = 5.6 µF
Ceramic
I
L
= 100 mA
C
BYP
= 0
C
BYP
= 100 pF
C
BYP
= 1 nF
C
BYP
= 10 nF
Overtemperature Shutdown
V
OUT
(1V/DIV) I
OUT
(200mA/DIV)
TIME (0.5Sec/DIV)
R
LOAD
=6.6
0
0
-80
-70
-60
-50
-40
-30
-20
1.0E+01 1.0E+03 1.0E+05 1.0E+07
Power Supply Rejection Ratio
PSRR (dB)
Frequency (Hz)
CL=2.2µF Tantalum
C
BYP
=1000pF
100mA
100µA
1mA
10mA
100mA
100µA
-80
-70
-60
-50
-40
-30
-20
-10
0
1.0E+01 1.0E+03 1.0E+05 1.0E+07
Power Supply Rejection Ratio
PSRR (dB)
Frequency (Hz)
100mA
10mA
1mA
100µA
100mA
100µA
CL=2.2µF Tantalum
C
BYP
=0
Short Circuit Response
TIME (2mS/DIV)
V
OUT
(1V/DIV) I
LOAD
(400mA/DIV)
R
LOAD
=100
R
SHORT
=0.1
0
0
-80
-70
-60
-50
-40
-30
-20
-10
1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06
PSRR ( dB)
Power Supply Rejection Ratio
Frequency (Hz)
CL = 10 µF
Tantalum
I
L
= 100 mA
C
BYP
= 0
C
BYP
= 100 pF
C
BYP
= 1 nF
C
BYP
= 10 nF
Analog Microelectronics, Inc.
9
AME8803/8814
300mA CMOS LDO
Transient Line Response
TIME (2mS/DIV)
V
O
(1mV/DIV) V
IN
(1V/DIV)
CL = 2.2µF
V
IN DC
= 5.0V
Noise Measurement
TIME (20mS/DIV)
Vo (1mV/ DIV)
CL = 2.2µF
NO FILTER
Current Limit Response
V
OUT
(1V/DIV) I
OUT
(200mA/DIV)
TIME (2mS/DIV)
R
LOAD
=3.3
0
0
10
100
300
0.1
1.0
8.0
SOT-23-5
Safe Operating Area
Output Current (mA)
Input-Output Voltage Differential (V)
Analog Microelectronics, Inc.
10
300mA CMOS LDO
AME8803/8814
0.01
0.1
1
10
100
1000
10000
0 50 100 150 200
ESR (
ΩΩ
)
Stable Region
Untested Region
Unstable Region
ILOAD (mA)
CL=1µF
Stability vs. ESR vs I
LOAD
0.01
0.1
1
10
100
1000
10000
0 50 100 150 200
Stable Region
Untested Region
Unstable Region
ILOAD (mA)
ESR (
ΩΩ
)
CL=3µF
Stability vs. ESR vs I
LOAD
0.001
0.01
0.1
1
10
100
1000
10000
0 50 100 150 200
Stable Region
Untested Region
Unstable Region
ILOAD (mA)
ESR (
ΩΩ
)
CL=10µF
Stability vs. ESR vs I
LOAD
0.01
0.1
1
10
100
1000
10000
0 50 1 00 1 50 200
ILOAD (mA)
Stable Region
Untested Region
Unstable Region
ESR (
ΩΩ
)
CL=2µF
Stability vs. ESR vs I
LOAD
Analog Microelectronics, Inc.
11
AME8803/8814
300mA CMOS LDO
27
28
29
30
31
32
33
34
35
-45 -5 2 5 55 85
Temperature (0C)
Quiescent Current @ 5V
(uA)
Quiescent Current vs. Temp.
0.40
0.42
0.44
0.46
0.48
0.50
0.52
0.54
0.56
0.58
-45 -5 25 55 85
Temperature (0C)
Load Regulation (%)
Load Regulation vs. Temp.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-45-5255585
Tem perature (0C)
Shut Down Current (uA)
Shut Down Current vs. Temp.
-0.50
-0.45
-0.40
-0.35
-0.30
-0.25
-0.20
-45-5255585
Tem perature (0C)
EN pin LO bias current (uA)
EN pin LO bias Current vs. Temp.
150
160
170
180
190
200
210
220
-45 -5 25 55 85
Tem perature (0C)
Dropout Voltage @ 300mA
(mV)
Dropout Voltage vs. Temp.
0.15
0.20
0.25
0.30
0.35
0.40
0.45
-45-5255585
Tem perature (0C)
PG VOL @ 0.4mA (V)
PG VOL vs. Temp.
Analog Microelectronics, Inc.
12
300mA CMOS LDO
AME8803/8814
nn
nn
n Package Dimension
SOT-26
SOT-26 (Wide)
MIN MAX MIN MAX
A 1.00 1.40 0. 0394 0.0551
A
1
0.00 0.15 0.0000 0.0591
A2 0.70 1.25 0.0276 0.0492
b 0.35 0.50 0.0138 0.0197 C 0.08 0.25 0.0031 0.0098 D 2.70 3.10 0.1063 0.1220
E 1.40 1.80 0.0551 0.0709
e H 2.60 3.00 0.1024 0.1181
L 0.35 - 0.0138 -
θθθθ
1
0
°
9
°
0
°
9
°
S
1
0.85 1.05 0.0335 0.0413
1.90 BSC 0.0748 BSC
SYMBOLS
MILLIMETERS INCHES
MIN MAX MIN MAX
A 1.00 1.30 0.0937 0.0512
A
1
0.00 0.10 0.000 0.0039
A2 1.00 1.40 0.0937 0.0551
b 0.35 0.50 0.0138 0.0197 C 0.10 0.25 0.0039 0.0098 D 2.70 3.10 0.1063 0.1220 E 1.60 2.00 0.0630 0.0787 e---­H 2.60 3.00 0.1024 0.1181 L 0.37 - 0.0146 -
θθθθ
11
°
9
°
1
°
9
°
S
1
0.85 1.05 0.0335 0.0413
SY MBO L S
MILLIMETERS INCHES
Life Support Policy:
These products of Analog Microelectronics, Inc. are not authorized for use as critical components in life-
support devices or systems, without the express written approval of the president
of Analog Microelectronics, Inc.
Analog Microelectronics, Inc. reserves the right to make changes in the circuitry and specifications of its
devices and advises its customers to obtain the latest version of relevant information.
Analog Microelectronics, Inc., August 2001
Document: 2006-DS8803/8814-E
Corporate Headquarters Asia Pacific Headquarters
Analog Microelectronics, Inc. AME, Inc.
3100 De La Cruz Blvd. Suite 201 2F, 187 Kang-Chien Road, Nei-Hu District Santa Clara, CA. 95054-2046 Taipei 114, Taiwan, R.O.C. Tel : (408) 988-2388 Tel : 886 2 2627-8687 Fax: (408) 988-2489 Fax : 886 2 2659-2989
www.analogmicro.com
E-Mail: info@analogmicro.com
Loading...