Analog Microelectronics AME8808OEGT, AME8808OECS, AME8808NEGT, AME8808NECS, AME8808MEGT Datasheet

Analog Microelectronics, Inc.

AME8808

nn

n General Description

nn

The AME8808 family of positive, linear regulators feature
low quiescent current (30µA typ.) with low dropout volt­age, making them ideal for battery applications. The
space-saving SOT-223 and DP AK-2 packages are attrac­tive for "Pocket" and "Hand Held" applications.

These rugged devices have both Thermal Shutdown,
and Current Fold-back to prevent device failure under
the "Worst" of operating conditions.

The AME8808 is stable with an output capacitance of

2.2µF or greater .

750mA CMOS LDO

nn

n Features

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l Very Low Dropout Voltage
l Guaranteed 750mA Output
l Accurate to within 1.5%
l 30µA Quiescent Current
l Over-Temperature Shutdown
l Current Limiting
l Short Circuit Current Fold-back
l Space-Saving SOT-223 and DPAK-2 Package
l Factory Pre-set Output Voltages
l Low Temperature Coefficient

nn

n Applications

nn

nn

n Functional Block Diagram

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Overcurrent

Shutdown

Thermal

Shutdown

AMP

V

=1.215V

ref

R1

R2

OUTIN

GND

l Instrumentation
l Portable Electronics
l Wireless Devices
l Cordless Phones
l PC Peripherals
l Battery Powered Widgets
l Electronic Scales

nn

n T ypical Application

nn

IN

5V

C1
1

µ

F

IN

AME8808

GND

OUT

C2

2.2

OUT

µ

F

1

Analog Microelectronics, Inc.

AME8808

nn

n Pin Configuration

nn

SOT -223 Top View

1. GND

2. V

OUT

3. V

IN

1

23

nn

n Ordering Information

nn

DPAK-2 Top View

1

23

1. GND

2. V

OUT

3. V

IN

(Connected with heat sink)

750mA CMOS LDO

Part Num b er Marking Output Voltage Package Operating Temp. Rang e

AM E 8808AEGT A E Tyww 3.3V SOT-223

AME8808BE GT AE Uyww 3.0V SOT-223
AME8808C EGT AEVyww 2.8V SOT-223
AME8808D EGT AE Wyww 2.5V SOT-223

AME8808EE GT AE Xyww 3.8V SOT-223

AME8808FE GT AEYyww 3.6V SOT-223
AME8808GEGT AEZyww 3.5V S OT-223

AME8808HEGT AFAyww 2.7V SOT-223

AME8808IEGT AFB yww 3.4V S OT-223

AME8808JEGT AGUyww 2.85V SOT-223

AME8808KE GT AHWyww 3.7V SOT-223

AME8808LEGT AJGyww 1.5V SOT-223

AME8808ME GT AJHyww 1.8V SOT-223

AME8808NEGT AKUyww 2.9V SOT-223
AME8808OEGT AKVyww 3.1V SOT-223

O

-40

C to +85OC

O

C to +85OC

-4 0

O

-4 0

C to +85OC

O

-4 0

C to +85OC

O

-4 0

C to +85OC

O

-4 0

C to +85OC

O

-4 0

C to +85OC

O

-4 0

C to +85OC

O

C to +85OC

-4 0

O

-4 0

C to +85OC

O

-4 0

C to +85OC

O

-4 0

C to +85OC

O

-4 0

C to +85OC

O

-4 0

C to +85OC

O

-4 0

C to +85OC

Please consult A ME sales office or authorized Rep./Distributor for other output voltage
and package type availability.

2

Analog Microelectronics, Inc.

AME8808

nn

n Ordering Information (contd.)

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750mA CMOS LDO

Part Number Marking Output Voltage Package Operati ng Temp. Range

AM E 8808

AME8808AECS

AECS

3.3V DPAK-2

yyww

AM E 8808

AME8808B ECS

BECS

3.0V DPAK-2

yyww

AM E 8808

AME8808CE CS

CECS

2.8V DPAK-2

yyww

AM E 8808

AME8808DE CS

DECS

2.5V DPAK-2

yyww

AM E 8808

AME8808E ECS

EECS

3.8V DPAK-2

yyww

AM E 8808

AME8808FECS

FECS

3.6V DPAK-2

yyww

AM E 8808

AME8808GECS

GECS

3.5V DPAK-2

yyww

AM E 8808

AME8808HE CS

HECS

2.7V DPAK-2

yyww

AM E 8808

AME8808IECS

IECS

3.4V DPAK-2

yyww

AM E 8808

AME8808JECS

JECS

2.85V DPAK-2

yyww

AM E 8808

AME8808K ECS

KECS

3.7V DPAK-2

yyww

AM E 8808

AME8808LE CS

LECS

1.5V DPAK-2

yyww

AM E 8808

AME8808M ECS

MECS

1.8V DPAK-2

yyww

AM E 8808

AME8808NE CS

NECS

2.9V DPAK-2

yyww

AM E 8808

AME8808OECS

OECS

3.1V DPAK-2

yyww
Pleas e c ons ult A M E s ales office or authorized Rep./ Dis tributor for other output voltage
and pack age ty pe availability.

O

-40

C to +85OC

O

C to +85OC

-40

O

C to +85OC

-40

O

-40

C to +85OC

O

-40

C to +85OC

O

-40

C to +85OC

O

-40

C to +85OC

O

-40

C to +85OC

O

-40

C to +85OC

O

-40

C to +85OC

O

-40

C to +85OC

O

C to +85OC

-40

O

-40

C to +85OC

O

-40

C to +85OC

O

-40

C to +85OC

3

Analog Microelectronics, Inc.

AME8808

nn

n Absolute Maximum Ratings

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Parameter Maximum Unit

Input Voltage 8 V

Output Current 1 A

Input, Output Voltage GND - 0.3 to V

ES D Cl as s ific at ion B

nn

n Recommended Operating Conditions

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Pa ra m e te r Rating Unit

Supply Vol t age 4.5 t o 5. 5 V

+ 0.3 V

DD

750mA CMOS LDO

Am bient Temperature Range -40 to +85

Junct ion Temperature -40 to +125

nn

n Thermal Information

nn

Parame ter

SOT-223 160

Thermal Resistance (

Internal Power Dissipation (P
(∆T = 100

Max i m um Junc tion Temperature

o

C)

)

θ

jc

DPAK-2 60

)

D

SOT-223 625

DPAK-2 3,000

o

C

o

C

Maximum Unit

o

C / W

mW

150

o

C

Max i m um Lead Temperature ( 10 Sec )

Caution: S tress ab ove t he li sted abs ol ut e rat i ng m ay cause permanent dam age t o t he device

4

300

o

C

Analog Microelectronics, Inc.

AME8808

nn

n Electrical Specifications

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750mA CMOS LDO

TA = 25oC unless otherwis e not ed

Parameter Symbol Min Typ Max Units

Input Voltage V

Output Voltage Accuracy V

Dropout Vol tage V

DROPOUT

Output Current I

Current Limit I

Short Circui t Current I

Quiescent Current I

Ground Pin Current I

Line Regu lation REG

Load Regulation REG

IN

O

LIM

SC

Q

GND

O

LINE

LOAD

I

O

V

O=VONOM

IO=5mA

V

IN=VO

Test Condition

=1mA

I

O

=750mA

-2.0%

V

>1.2V

O

>1.2V

V

O

V

<0.8V

O

=0mA

I

O

I

=1mA to 750mA

O

+1 to VO+2

=1mA to 750mA

I

O

1.5V<V

2.0V <V

2.8V <V

V

V

Note 1 8 V

-1.5 1.5 %

<=2.0V 1400

O(NOM)

<= 2.8V 1000

O(NOM)

<3.8V 750

O(NOM)

750 mA
750 850 mA

< 2.0V 0.15 %

O

>= 2.0V 0.02 0.1 %

O

Over Temerature Shutdown OTS 150
Over Temerature Hys terisis OTH 30

V

Temperature Coefficient TC 30

O

f=1kHz 50

=100mA

I

Power Supply Rejection

PSRR f=10kHz 20 dB

O

C

=2.2mF

O

f=100kHz 15

See

chart

300 600 mA

30 50
30 50

0.2 1 %

ppm/

mV

µ
µ

o

C

o

C

A
A

o

C

Output Voltage Nois e eN

Note1:V

IN(min)=VOUT+VDROPOUT

f=10Hz to 100kHz

=10mA,C

I

O

BYP

=0mF

Co=2.2mF 30

mVrms

Co=100mF 20

5

Analog Microelectronics, Inc.

AME8808

nn

n Detailed Description

nn

The AME8808 family of CMOS regulators contain a
PMOS pass transistor, voltage reference, error amplifier ,
over-current protection, and thermal shutdown.

The P-channel pass transistor receives data from the
error amplifier, over-current shutdown, and thermal pro­tection circuits. During normal operation, the error am­plifier compares the output voltage to a precision refer­ence. Over-current and Thermal shutdown circuits be­come active when the junction temperature exceeds
150oC, or the current exceeds 750mA. During thermal
shutdown, the output voltage remains low. Normal op­eration is restored when the junction temperature drops
below 120oC.

The AME8808 switches from voltage mode to current mode
when the load exceeds the rated output current. This
prevents over-stress. The AME8808 also incorporates
current foldback to reduce power dissipation when the
output is short circuited. This feature becomes active
when the output drops below 0.8 volts, and reduces the
current flow by 65%. Full current is restored when the
voltage exceeds 0.8 volts.

750mA CMOS LDO

nn

n Enable

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The Enable pin normally floats high. When actively,
pulled low, the PMOS pass transistor shuts off, and all
internal circuits are powered down. In this state, the
quiescent current is less than 1µA. This pin behaves
much like an electronic switch.

nn

n External Capacitors

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The AME8806/8809 is stable with an output capacitor
to ground of 2.2µF or greater . Ceramic capacitors have
the lowest ESR, and will offer the best AC performance.
Conversely, Aluminum Electrolytic capacitors exhibit
the highest ESR, resulting in the poorest AC response.
Unfortunately , large value ceramic capacitors are com­paratively expensive. One option is to parallel a 0.1µF
ceramic capacitor with a 10µF Aluminum Electrolytic.
The benefit is low ESR, high capacitance, and low over­all cost.

A second capacitor is recommended between the input
and ground to stabilize Vin. The input capacitor should
be at least 0.1µF to have a beneficial effect.

All capacitors should be placed in close proximity to the
pins. A "Quiet" ground termination is desirable. This
can be achieved with a "Star" connection.

6

Analog Microelectronics, Inc.

AME8808

45
40
35

A)

µ

µµ

µ

30
25
20
15
10

Ground Current (

0.3

0.25

0.2

0.15

0.1

Drop Out Voltage (V)

0.05

0

Ground Current vs. Input Voltage

85OC

25OC

5
0

012345678

Input Voltage (V)

Drop Out Voltage vs. Output Voltage

I

=600mA

LOAD

22.533.544.5 55.5

Output Voltage (V)

750mA CMOS LDO

Load Step ( 1mA-600mA)

Output

CL=2.2µF

CIN=2.2

µ

F

I

(200mA/DIV) Vo(10mV/DIV)

L

I

0

-10

-20

CL=2.2µF Tantalum

-30

-40

-50

PSRR (dB)

-60

-70

-80

1.0E+01 1.0E+03 1.0E+05 1.0E+07

Load

TIME ( 20mS/DIV)

Power Supply Rejection Ratio

100mA

C

=0

BYP

100mA

100µA

100µA

Frequency (Hz)

10mA

1mA

0

Safe Operating Area

75OC rise

Output Current (mA)

With HS capable of twice

Input-Output Voltage Differential (V)

SOT-223

DPAK-2

θ

jc

Line Transient Response

(1V/DIV)

IN

(10mV/DIV) V

OUT

V

TIME (200mS/DIV)

C

LOAD

I

LOAD

V

OUTDC

V

INDC

=2.2µF
=1mA

=3.3V

=4.5V

7

Analog Microelectronics, Inc.

AME8808

Vo (1mV/ DIV)

Noise Measurement

CL = 2.2µF

NO FILTER

TIME (20mS/DIV)

Current Limit Response

Overtemperature Shutdown

(200mA/DIV)

OUT

(1V/DIV) I

OUT

V

750mA CMOS LDO

R

=6.6

LOAD

TIME (0.5Sec/DIV)

Short Circuit Response

0

Ω

0

(1V/DIV)

OUT

(200mA/DIV) V

OUT

I

TIME (2mS/DIV)

C

LOAD

C

IN

R

LOAD

V

OUTNOM

=2.2µF

=1.0µF

=3.3

=3.3V

C

=2.2µF

LOAD

=1µF

C

IN

<100m

R

LOAD

Ω

(200mV/DIV)

OUT

Ω

(1V/DIV) I

OUT

V

TIME (2mS/DIV)

8

Analog Microelectronics, Inc.

AME8808

nn

n Package Dimension

nn

TO-252 (DPAK)

750mA CMOS LDO

SYMBOLS

A 0.45 0.58 0.0177 0.023
B 1.60 1.95 0.06 0.0768

C 0.51 - 0.02 ­D 0.45 0.60 0.0177 0.0236
E 6.40 6.80 0.252 0.2677

F 5.40 5.80 0.2126 0.2283
G 2.20 2.85 0.0866 0.1122
H - * 2.30 - * 0.0906

I - 0.90 - 0.0354

J - 0.97 - 0.038
K 5.20 5.50 0.20 0.22
L 0.89 2.03 0.035 0.08

* : Typi cal value

NOTES :

1. CONTROLLING DIMENSION : MILLIMETERS.

2. MAXIMUM LE AD THICK NESS INC LUDES LEAD FINISH THICKN ESS
MINIMUM LEAD THICKNE SS IS THE MINIMUM THICKNE SS O F B ASE
MATERIAL.

MILLIMETERS INCHES

MIN MAX MIN MAX

TO-252 (DPAK)

SYMBOLS

A 0.45 0.58 0.0177 0.023
B 1.60 1.95 0.06 0.0768
C 0.51 - 0.02 ­D 0.45 0.60 0.0177 0.0236
E 6.40 6.80 0.252 0.2677

F 5.40 5.80 0.2126 0.2283
G 2.20 2.85 0.0866 0.1122
H - * 2.30 - * 0.0906

I - 0.90 - 0.0354

J - 0.97 - 0.038
K 5.20 5.50 0.20 0.22
L 0.89 2.03 0.035 0.08

* : Typi cal value

NOTES :

1. CONTROLLING DIMENSION : MILLIMETERS.

2. MAXIMUM LE AD THICK NESS INC LUDES LEAD FINISH THICKN ESS
MINIMUM LEAD THICKNE SS IS THE MINIMUM THICKNE SS O F B ASE
MATERIAL.

MILLIMETERS INCHES

MIN MAX MIN MAX

9

Analog Microelectronics, Inc.

AME8808

nn

n Package Dimension

nn

SOT-223

750mA CMOS LDO

α

SYMBOLS

A 1.50 1.80 0.0591 0.0709

A

1

B 0.60 0.838 0.0236 0.033

B

1

C 0.24 0.381 0.0094 0.0150
D 6.299 6.706 0.2480 0.2640
E 3.30 3.708 0.1299 0.1460
e

e

1

H 6.70 7.30 0.2638 0.2874
L
L

1

L

2

αααα 0

MILLIMETERS INCHES

MIN MA X MIN MAX

0.02 0.10 0.0008 0.0039

2.895 3.15 0.1140 0.1240

2.30 BSC

4.60 BSC

0.91 MIN 0.0360 MIN

2.00 MAX

0.06 BSC 0.0024 BSC

°

10

°

0.090 BSC

0.181 BSC

0.0787 MAX

°

0

10

°

10

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Life Support Policy:

These products of Analog Microelectronics, Inc. are not authorized for use as critical components in life-

support devices or systems, without the express written approval of the president

of Analog Microelectronics, Inc.

Analog Microelectronics, Inc. reserves the right to make changes in the circuitry and specifications of its

devices and advises its customers to obtain the latest version of relevant information.

 Analog Microelectronics, Inc., August 2001

Document: 2006-DS8808-C

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