Analog Devices TMP01 Datasheet

VPTAT
V+
TEMPERATURE
SENSOR &
VOLTAGE
REFERENCE
2.5V
SENSOR
1
2
3
4
8
7
6
5
HYSTERESIS GENERATOR
WINDOW
COMPARATOR
R1
TMP01
VREF
SET
HIGH
SET
LOW
GND
R2
R3
UNDER
OVER
a
FEATURES –558C to +1258C (–678F to +2578F) Operation
61.08C Accuracy Over Temperature (typ) Temperature-Proportional Voltage Output User Programmable Temperature Trip Points User Programmable Hysteresis 20 mA Open Collector Trip Point Outputs TTL/CMOS Compatible Single-Supply Operation (4.5 V to 13.2 V) Low Cost 8-Pin DIP and SO Packages
APPLICATIONS Over/Under Temperature Sensor and Alarm Board Level Temperature Sensing Temperature Controllers Electronic Thermostats Thermal Protection HVAC Systems Industrial Process Control Remote Sensors
GENERAL DESCRIPTION
The TMP01 is a temperature sensor which generates a voltage output proportional to absolute temperature and a control signal from one of two outputs when the device is either above or below a specific temperature range. Both the high/low tempera­ture trip points and hysteresis (overshoot) band are determined by user-selected external resistors. For high volume production, these resistors are available on-board.
The TMP01 consists of a bandgap voltage reference combined with a pair of matched comparators. The reference provides both a constant 2.5 V output and a voltage proportional to abso­lute temperature (VPTAT) which has a precise temperature co­efficient of 5 mV/K and is 1.49 V (nominal) at +25°C. The comparators compare VPTAT with the externally set tempera­ture trip points and generate an open-collector output signal when one of their respective thresholds has been exceeded.
Temperature Controller
TMP01*
FUNCTIONAL BLOCK DIAGRAM
Hysteresis is also programmed by the external resistor chain and is determined by the total current drawn out of the 2.5 V refer­ence. This current is mirrored and used to generate a hysteresis offset voltage of the appropriate polarity after a comparator has been tripped. The comparators are connected in parallel, which guarantees that there is no hysteresis overlap and eliminates erratic transitions between adjacent trip zones.
The TMP01 utilizes proprietary thin-film resistors in conjunc­tion with production laser trimming to maintain a temperature accuracy of ±1°C (typ) over the rated temperature range, with excellent linearity. The open-collector outputs are capable of sinking 20 mA, enabling the TMP01 to drive control relays di­rectly. Operating from a +5 V supply, quiescent current is only 500 µA (max).
The TMP01 is available in the low cost 8-pin epoxy mini-DIP and SO (small outline) packages, and in die form.
*Protected by U.S. Patent No. 5,195,827.
REV. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
© Analog Devices, Inc., 1995
One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703
TMP01EP/FP, TMP01ES/FS–SPECIFICATIONS
Plastic DIP and Surface Mount Packages
(V+ = +5 V, GND = O V, –408C TA +858C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUTS SET HIGH, SET LOW
Offset Voltage V Offset Voltage Drift TCV Input Bias Current, “E” I Input Bias Current, “F” I
OUTPUT VPTAT
1
OS
OS B B
0.25 mV 3 µV/°C 25 50 nA 25 100 nA
Output Voltage VPTAT TA = +25°C, No Load 1.49 V Scale Factor TC Temperature Accuracy, “E” T Temperature Accuracy, “F” T
VPTAT
= +25°C, No Load –1.5 ±0.5 1.5 °C
A
= +25°C, No Load –3 ±1.0 3 °C
A
Temperature Accuracy, “E” 10°C < T Temperature Accuracy, “F” 10°C < T Temperature Accuracy, “E” –40°C < T Temperature Accuracy, “F” –40°C < T Temperature Accuracy, “E” –55°C < T Temperature Accuracy, “F” –55°C < T
< 40°C, No Load ±0.75 °C
A
< 40°C, No Load ±1.5 °C
A
< 85°C, No Load –3.0 ±1 3.0 °C
A
< 85°C, No Load –5.0 ±2 5.0 °C
A
< 125°C, No Load ±1.5 °C
A
< 125°C, No Load ±2.5 °C
A
5 mV/K
Repeatability Error VPTAT Note 4 0.25 Degree Long Term Drift Error Notes 2 and 6 0.25 0.5 Degree Power Supply Rejection Ratio PSRR TA = +25°C, 4.5 V V+ 13.2 V ±0.02 ±0.1 %/V
OUTPUT VREF
Output Voltage, “E” VREF T Output Voltage, “F” VREF T Output Voltage, “E” VREF –40°C < T Output Voltage, “F” VREF –40°C < T Output Voltage, “E” VREF –55°C < T Output Voltage, “F” VREF –55°C < T Drift TC
VREF
= +25°C, No Load 2.495 2.500 2.505 V
A
= +25°C, No Load 2.490 2.500 2.510 V
A
< 85°C, No Load 2.490 2.500 2.510 V
A
< 85°C, No Load 2.485 2.500 2.515 V
A
< 125°C, No Load 2.5 ± 0.01 V
A
< 125°C, No Load 2.5 ± 0.015 V
A
–10 ppm/°C Line Regulation 4.5 V V+ 13.2 V ±0.01 ±0.05 %/V Load Regulation 10 µA I Output Current, Zero Hysteresis I Hysteresis Current Scale Factor SF
VREF
HYS
(Note 1) 5.0 µA/°C
500 µA ±0.1 ±0.25 %/mA
VREF
7 µA Turn-On Settling Time To Rated Accuracy 25 µs
OPEN-COLLECTOR OUTPUTS OVER, UNDER
I
Output Low Voltage V Output Low Voltage V Output Leakage Current I Fall Time t
OL
OL OH HL
= 1.6 mA 0.25 0.4 V
SINK
I
= 20 mA 0.6 V
SINK
V+ = 12 V 1 100 µA See Test Load 40 ns
POWER SUPPLY
Supply Range V+ 4.5 13.2 V Supply Current I Supply Current I Power Dissipation P
NOTES
1
K = °C + 273.15.
2
Guaranteed but not tested.
3
Does not consider errors caused by heating due to dissipation of output load currents.
4
Maximum deviation between +25°C readings after temperature cycling between –55°C and +125°C.
5
Typical values indicate performance measured at TA = +25°C.
6
Observed in a group sample over an accelerated life test of 500 hours at 150°C.
Specifications subject to change without notice.
SY SY
DISS
Unloaded, +V = 5 V 400 500 µA Unloaded, +V = 13.2 V 450 800 µA +V = 5 V 2.0 2.5 mW
Test Load
V+
1k
20pF
–2–
REV. C
TMP01
TO-99 Metal Can Package (V+ = +5 V, GND = O V, –408C TA +858C
TMP01FJ–SPECIFICA TIONS
Parameter Symbol Conditions Min Typ Max Units
INPUTS SET HIGH, SET LOW
Offset Voltage V Offset Voltage Drift TCV Input Bias Current, “F” I
OUTPUT VPTAT
1
Output Voltage VPTAT TA = +25°C, No Load 1.49 V Scale Factor TC Temperature Accuracy, “F” T Temperature Accuracy, “F” 10°C < T Temperature Accuracy, “F” –40°C < T Temperature Accuracy, “F” –55°C < T Repeatability Error VPTAT Note 4 0.25 Degree Long Term Drift Error Notes 2 and 6 0.25 0.5 Degree Power Supply Rejection Ratio PSRR TA = +25°C, 4.5 V V+ 13.2 V ±0.02 ±0.1 %/V
OUTPUT VREF
Output Voltage, “F” VREF T Output Voltage, “F” VREF –40°C < T Output Voltage, “F” VREF –55°C < T Drift TC Line Regulation 4.5 V V+ 13.2 V ±0.01 ±0.05 %/V Load Regulation 10 µA I Output Current, Zero Hysteresis I Hysteresis Current Scale Factor SF Turn-On Settling Time To Rated Accuracy 25 µs
OPEN-COLLECTOR OUTPUTS OVER, UNDER
Output Low Voltage V Output Low Voltage V Output Leakage Current I Fall Time t
POWER SUPPLY
Supply Range V+ 4.5 13.2 V Supply Current I Supply Current I Power Dissipation P
NOTES
1
K = °C + 273.15.
2
Guaranteed but not tested.
3
Does not consider errors caused by heating due to dissipation of output load currents.
4
Maximum deviation between +25°C readings after temperature cycling between –55°C and +125°C.
5
Typical values indicate performance measured at TA = +25°C.
6
Observed in a group sample over an accelerated life test of 500 hours at 150°C.
Specifications subject to change without notice.
OS
OS
B
VPTAT
VREF
VREF
HYS
OL
OL OH HL
SY SY
DISS
unless otherwise noted)
0.25 mV 3 µV/°C 25 100 nA
5 mV/K
= +25°C, No Load –3 ±1.0 3 °C
A
= +25°C, No Load 2.490 2.500 2.510 V
A
< 40°C, No Load ±1.5 °C
A
< 85°C, No Load –5.0 ±2 5.0 °C
A
< 125°C, No Load ±2.5 °C
A
< 85°C, No Load 2.480 2.500 2.520 V
A
< 125°C, No Load 2.5 ± 0.015 V
A
–10 ppm/°C
500 µA ±0.1 ±0.25 %/mA
VREF
7 µA
(Note 1) 5.0 µA/°C
I
= 1.6 mA 0.25 0.4 V
SINK
I
= 20 mA 0.6 V
SINK
V+ = 12 V 1 100 µA See Test Load, Note 2 40 ns
Unloaded, +V = 5 V 400 500 µA Unloaded, +V = 13.2 V 450 800 µA +V = 5 V 2.0 2.5 mW
REV. C
–3–
TMP01 W AFER TEST LIMITS
(VDD = +5.0 V, GND = 0 V, TA = +258C, unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUTS SET HIGH, SET LOW
Input Bias Current I
B
100 nA
OUTPUT VPTAT
Temperature Accuracy TA = +25°C, No Load 1.5 °C
OUTPUT VREF
Nominal Value VREF T
= +25°C, No Load 2.490 2.510 V
A
Line Regulation 4.5 V V+ 13.2 V ±0.05 %/V Load Regulation 10 µA I
500 µA ±0.25 %/mA
VREF
OPEN-COLLECTOR OUTPUTS OVER, UNDER
Output Low Voltage V Output Low Voltage V Output Leakage Current I
OL OL
OH
I
= 1.6 mA 0.4 mV
SINK
I
= 20 mA 1.0 V
SINK
100 µA
POWER SUPPLY
Supply Range V+ 4.5 13.2 V Supply Current I
NOTES Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
SY
Unloaded 600 µA
DICE CHARACTERISTICS
Die Size 0.078 × 0.071 inch, 5,538 sq. mils
(1.98 × 1.80 mm, 3.57 sq. mm)
Transistor Count: 105
8
1
7
2 3
6
5
1. VREF
2. SETHIGH
3. SETLOW
4. GND (TWO PLACES) (CONNECTED TO SUBSTRATE)
5. VPTAT
4
4
6. UNDER
7. OVER
8. V+
For additional DICE ordering information, refer to databook.
–4–
REV. C
TMP01
ABSOLUTE MAXIMUM RATINGS
Maximum Supply Voltage . . . . . . . . . . . . . . . . –0.3 V to +15 V
Maximum Input Voltage
(SETHIGH, SETLOW) . . . . . . . . .–0.3 V to [(V+) +0.3 V]
Maximum Output Current (VREF, VPTAT) . . . . . . . . . 2 mA
Maximum Output Current (Open Collector Outputs) . . 50 mA
Maximum Output Voltage (Open Collector Outputs) . . . .15 V
Operating Temperature Range . . . . . . . . . . . .–55°C to +150°C
Dice Junction Temperature . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range . . . . . . . . . . . . – 65°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . +300°C
Package Type θ
8-Pin Plastic DIP (P) 103 8-Lead SOIC (S) 158 8-Lead TO-99 Can (J) 150
NOTES
1
θJA is specified for device in socket (worst case conditions).
2
θJA is specified for device mounted on PCB.
JA
1 2 1
θ
JC
Units
43 °C/W 43 °C/W 18 °C/W
CAUTION
1. Stresses above those listed under “Absolute Maximum Rat-
ings” may cause permanent damage to the device. This is a stress rating only and functional operation at or above this specification is not implied. Exposure to the above maximum rating conditions for extended periods may affect device reliability.
2. Digital inputs and outputs are protected, however, permanent
damage may occur on unprotected units from high energy electrostatic fields. Keep units in conductive foam or packag­ing at all times until ready to use. Use proper antistatic han­dling procedures.
3. Remove power before inserting or removing units from their
sockets.
ORDERING GUIDE
Temperature Package Package
Model/Grade Range
l
Description Option
GENERAL DESCRIPTION
The TMP01 is a very linear voltage-output temperature sensor, with a window comparator that can be programmed by the user to activate one of two open-collector outputs when a predeter­mined temperature setpoint voltage has been exceeded. A low drift voltage reference is available for setpoint programming.
The temperature sensor is basically a very accurately tempera­ture compensated, bandgap-type voltage reference with a buff­ered output voltage proportional to absolute temperature (VPTAT), accurately trimmed to a scale factor of 5 mV/K. See the Applications Information following.
The low drift 2.5 V reference output VREF is easily divided ex­ternally with fixed resistors or potentiometers to accurately es­tablish the programmed heat/cool setpoints, independent of temperature. Alternatively, the setpoint voltages can be supplied by other ground referenced voltage sources such as user­programmed DACs or controllers. The high and low setpoint voltages are compared to the temperature sensor voltage, thus creating a two-temperature thermostat function. In addition, the total output current of the reference (I
) determines the
VREF
magnitude of the temperature hysteresis band. The open collec­tor outputs of the comparators can be used to control a wide va­riety of devices.
HYSTERESIS
VREF
SET
HIGH
SET
LOW
GND
2
3
4
CURRENT
VOLTAGE
REFERENCE
SENSOR
CURRENT
MIRROR
AND
ENABLE
WINDOW
COMPARATOR
1k
I
HYS
HYSTERESIS VOLTAGE
TEMPERATURE
OUTPUT
TMP01
81
7
6
5
V+
OVER
UNDER
VPTAT
TMP01EP XIND Plastic DIP N-8 TMP01FP XIND Plastic DIP N-8 TMP01ES XIND SOIC SO-8 TMP01FS XIND SOIC SO-8 TMP01FJ
2
XIND TO-99 Can H-08A
TMP01GBC +25°C Die
NOTES
1
XIND = –40°C to +85°C.
2
Consult factory for availability of MIL/883 version in TO-99 can.
REV. C
Figure 1. Detailed Block Diagram
–5–
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