with true ground Class-G technology
Optional hardware-based headphone level limiter
2
I
C control interface
Volume control
Flexible input/output mixing
Output mode control
EMI emissions control
Automatic level control (ALC)
Adjustable headphone level limiter
Low shutdown current
Short-circuit and thermal protection
Pop-and-click suppression
Available in a 30-ball, 2.5 mm × 3.0 mm WLCSP
APPLICATIONS
Mobile phones
Portable multimedia devices
GENERAL DESCRIPTION
The SSM2804 is an audio subsystem designed specifically for
mobile phones and portable multimedia devices. This highly
flexible subsystem includes three input channels that can be
configured as single-ended stereo or monaural differential for
multimedia audio sources.
and Capless Headphone Driver
SSM2804
Each set of inputs is independently adjustable with the 2-wire
2
I
C interface and features an adjustable gain over a 30 dB range
in steps of 1 dB. Each set of input channels also offers the choice
of variable input impedance PGA mode or fixed input impedance
boost mode. The input signals are then mixed and routed to the
desired set of outputs. This configuration is set using the 2-wire
2
I
C control interface.
The SSM2804 includes three selectable output modes.
The first output mode is a stereo Class-D speaker driver capable
of delivering 2 × 1.4 W of continuous power to an 8 Ω bridge-tied
load (BTL) with 1% THD + N when using a 5 V supply. This
Class-D amplifier incorporates three-level Σ-Δ output modulation
designed to increase battery life and improve EMI performance.
The Class-D amplifier offers an I
with a gain range from +12 dB to −63 dB in 31 steps.
The second output mode is a pair of high performance headphone drivers capable of delivering 20 mW per channel into
stereo 32 Ω single-ended loads with 1% THD + N. The stereo
headphone drivers use a highly efficient, true ground centered
Class-G architecture. The headphone outputs incorporate
2
I
C-adjustable volume control with a gain range from 0 dB
to −75 dB in 32 steps.
The third output mode is an integrated receiver path bypass
switch for passing voice signals from the audio baseband.
The SSM2804 is specified over the industrial temperature range
of −40°C to +85°C. It has built-in thermal shutdown and output
short-circuit protection. The SSM2804 is available in a 30-ball,
2.5 mm × 3.0 mm wafer level chip scale package (WLCSP).
2
C-adjustable volume control
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
1.8 W PVDD = 3.6 V, RL = 4 Ω + 15 µH, THD + N = 10%
2.5 W PVDD = 4.2 V, RL = 4 Ω + 15 µH, THD + N = 10%
3.6 W PVDD = 5.0 V, RL = 4 Ω + 15 µH, THD + N = 10%
Total Harmonic Distortion Plus Noise
0.01 % R
(THD + N)
Output Noise (Vn) 40 µV 20 Hz to 20 kHz, A-weighted
Signal-to-Noise Ratio (SNR) 94 dB 2.0 V rms output, A-weighted, PVDD = 5 V
Power Supply Rejection Ratio (PSRR) 80 dB 217 Hz, 200 mV p-p ripple
80 dB 1 kHz, 200 mV p-p ripple
Common-Mode Rejection Ratio (CMRR) 55 dB Differential input mode, 1 kHz, 10 mV rms
Efficiency 89 % P
Minimum Load Resistance (R
) 4 Ω
LOAD
Average Switching Frequency (fSW) 400 kHz
Volume Control Gain Range −63 +12 dB
pin low
SD
rising edge from AGND to AVDD
SD
= 8 Ω + 33 µH, P
L
= 700 mW
OUT
= 250 mW
OUT
Rev. 0 | Page 4 of 36
SSM2804
Parameter Min Typ Max Unit Test Conditions/Comments
HEADPHONE OUTPUT
Output Offset Voltage (VOS) 2 mV Headphone only
8 mV INAx, INBx, INCx inputs
Output Power (P
40 mW
Total Harmonic Distortion Plus Noise
(THD + N)
0.02 % RL = 16 Ω, P
Output Noise (Vn) 16 µV 20 Hz to 20 kHz, A-weighted
Signal-to-Noise Ratio (SNR) 96 dB 800 mV rms output, A-weighted
Power Supply Rejection Ratio (PSRR) 95 dB 217 Hz, 200 mV p-p ripple
Crosstalk 90 dB 1 kHz, P
Minimum Load Resistance (R
Maximum Capacitive Load (C
Gain Range −75 0 dB
ESD Protection ±8 kV
RECEIVER PATH (BYPASS SWITCH)
Path Impedance (RON), Receiver Inputs
to Speaker Outputs
Signal Path THD + N 0.1 %
Output Noise 10 µV 20 Hz to 20 kHz, A-weighted
Off Channel Isolation 90 dB 217 Hz, 200 mV p-p ripple
Input Common Mode PVDD/2 V
) 20 mW RL = 32 Ω, THD + N = 1%
OUT
= 16 Ω, THD + N = 1%, 1 µF charge pump
R
L
capacitor
0.012 % R
= 32 Ω, P
L
= 15 mW
OUT
= 10 mW
OUT
85 dB 1 kHz, 200 mV p-p ripple
= 12 mW
OUT
) 16 Ω
LOAD
) 500 pF
LOAD
1.5 Ω RCV+ to EP+ and RCV− to EP−
= 70 mW, RL = 32 Ω or P
P
OUT
= 8 Ω
R
L
= 17.5 mW,
OUT
Table 2. Digital Logic Levels (CMOS Levels)
Parameter Min Typ Max Unit
Input Low Level (VIL) 0.35 V
Input High Level (VIH) 1.35 V
Output Low Level (VOL) 0.1 × AVDD V
Output High Level (VOH) 0.9 × AVDD V
Rev. 0 | Page 5 of 36
SSM2804
I2C TIMING CHARACTERISTICS
Table 3.
Limit
Parameter
t
600 ns Start condition setup time
SCS
t
600 ns Start condition hold time
SCH
t
MIN
MAX
tPH 600 ns SCL pulse width high
tPL 1.3 s SCL pulse width low
f
0 526 kHz SCL frequency
SCL
tDS 100 ns Data setup time
tDH 900 ns Data hold time
tRT 300 ns SDA and SCL rise time
tFT 300 ns SDA and SCL fall time
t
600 ns Stop condition setup time
HCS
Timing Diagram
SDA
SCL
Unit Description t
t
SCH
t
DS
t
PL
t
RT
Figure 2. I
t
t
DH
2
C Timing
PH
t
t
HCS
t
SCS
FT
09960-002
Rev. 0 | Page 6 of 36
SSM2804
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 4.
Parameter Rating
Analog Supply Voltage (AVDD) −0.3 V to +3.6 V
Speaker Supply Voltage (PVDD) −0.3 V to +3.6 V
Input Voltage VDD
SD, SCL, SDA, RCV+, RCV−
INA1, INA2, INB1, INB2, INC1, INC2 −0.3 V to AVDD + 0.3 V
ESD (HBM) on Headphone Output 8 kV
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +85°C
Junction Temperature Range −65°C to +165°C
Lead Temperature (Soldering, 60 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
−0.3 V to +6.0 V
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 5. Thermal Resistance
Package Type PCB θJA θJB Unit
30-Ball, 2.5 mm × 3.0 mm WLCSP 1S0P 162 39 °C/W
2S0P 76 21 °C/W
ESD CAUTION
Rev. 0 | Page 7 of 36
SSM2804
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
BALL A1
CORNER
1
A
LSPK+
B
LSPK–PGNDRSPK–EP–RCV–INA2
234
RSPK+EP+RCV+INA1
PVDD
56
C
D
E
CPVSSSCLSDAINB2INB1
CF2
AGNDCPVDDHPRSDINC2INC1
CF1AVDDHPLAGNDAVDDBIAS
TOP VIEW
(BALL SIDE DO WN)
Not to Scal e
09960-003
Figure 3. Pin Configuration
Table 6. Pin Function Descriptions
Pin No. Mnemonic Description
A1 LSPK+ Class-D Loudspeaker Output Left +
B1 LSPK− Class-D Loudspeaker Output Left −
C1 CF2 Charge Pump Flyback Capacitor, Terminal 2
D1 AGND Analog Ground
E1 CF1 Charge Pump Flyback Capacitor, Terminal 1
A2 PVDD Speaker Power Supply
B2 PGND Speaker Ground
C2 CPVSS Charge Pump Negative Supply for Class-G
D2 CPVDD Charge Pump Positive Supply for Class-G
E2 AVDD Analog Power Supply
A3 RSPK+ Class-D Loudspeaker Output Right +
B3 RSPK− Class-D Loudspeaker Output Right −
C3 SCL 2-Wire I2C Control Interface Clock Input
D3 HPR Class-G Headphone Output, Right Channel
E3 HPL Class-G Headphone Output, Left Channel
A4 EP+ Integrated Switch Output +
B4 EP− Integrated Switch Output −
C4 SDA 2-Wire I2C Control Interface Data Input/Output
D4
SD
Shutdown Control, Active Low (Optional Limiter Threshold Voltage)
E4 AGND Analog Ground
A5 RCV+ Baseband Receiver (Voice) Input +
B5 RCV− Baseband Receiver (Voice) Input −
C5 INB2 Configurable Input B2 (Single-Ended Input B− or Stereo Input B, Left Channel)
D5 INC2 Configurable Input C2 (Single-Ended Input C− or Stereo Input C, Left Channel)
E5 AVDD Analog Power Supply
A6 INA1 Configurable Input A1 (Single-Ended Input A+ or Stereo Input A, Right Channel)
B6 INA2 Configurable Input A2 (Single-Ended Input A− or Stereo Input A, Left Channel)
C6 INB1 Configurable Input B1 (Single-Ended Input B+ or Stereo Input B, Right Channel)
D6 INC1 Configurable Input C1 (Single-Ended Input C+ or Stereo Input C, Right Channel)
E6 BIAS Device Bias Pin
Rev. 0 | Page 8 of 36
SSM2804
TYPICAL PERFORMANCE CHARACTERISTICS
100
RL = 8Ω + 33µH
10
PVDD = 3.6V
1
100
10
1
RL = 4Ω + 15µH
PVDD = 3.6V
PVDD = 2.7V
0.1
THD + N (%)
0.01
0.001
0.000110
0.0010.010.11
PVDD = 2.7V
PVDD = 4.2V
PVDD = 5V
OUTPUT POWER (W)
Figure 4. THD + N vs. Output Power into 8 Ω, Class-D Amplifier,
Mono Operation
100
RL = 8Ω + 33µH
10
PVDD = 3.6V
1
0.1
THD + N (%)
0.01
0.001
0.000110
0.0010.010.11
PVDD = 2.7V
PVDD = 4.2V
PVDD = 5V
OUTPUT POWER (W)
Figure 5. THD + N vs. Output Power into 8 Ω, Class-D Amplifier,
Stereo Operation
0.1
THD + N (%)
0.01
0.001
0.000110
09960-004
0.0010.010.11
PVDD = 4.2V
OUTPUT POWER (W)
PVDD = 5V
09960-005
Figure 7. THD + N vs. Output Power into 4 Ω, Class-D Amplifier,
Mono Operation
100
RL = 4Ω + 15µH
10
PVDD = 3.6V
1
0.1
THD + N (%)
0.01
0.001
0.000110
09960-006
0.0010.010.11
PVDD = 2.7V
OUTPUT POWER (W)
PVDD = 4.2V
PVDD = 5V
09960-007
Figure 8. THD + N vs. Output Power into 4 Ω, Class-D Amplifier,
Stereo Operation
100
PVDD = 2.7V
R
= 8Ω + 33µH
L
10
1
0.1
THD + N (%)
0.01
0.001
10100k
300mW
125mW
62.5mW
1001k10k
FREQUENCY (Hz)
Figure 6. THD + N vs. Frequency, Class-D Amplifier, Mono Operation,
= 8 Ω, PVDD = 2.7 V
R
L
09960-008
Rev. 0 | Page 9 of 36
100
PVDD = 2.7V
R
= 4Ω + 15µH
L
10
1
0.1
THD + N (%)
0.01
0.001
10100k
500mW
62.5mW
1001k10k
250mW
125mW
FREQUENCY (Hz)
Figure 9. THD + N vs. Frequency, Class-D Amplifier, Mono Operation,
RL = 4 Ω, PVDD = 2.7 V
09960-009
SSM2804
100
10
PVDD = 3.6V
R
= 8Ω + 33µH
L
100
10
PVDD = 3.6V
R
=4Ω + 15µH
L
1
0.1
THD + N (%)
0.01
0.001
10100k
600mW
500mW
250mW
1001k10k
FREQUENCY (Hz)
125mW
Figure 10. THD + N vs. Frequency, Class-D Amplifier, Mono Operation,
= 8 Ω, PVDD = 3.6 V
R
L
100
PVDD = 4.2V
R
=8Ω + 33µH
L
10
1
0.1
THD + N (%)
0.01
900mW
250mW
125mW
1
0.1
THD + N (%)
0.01
0.001
10100k
09960-010
1.1W
125mW
1001k10k
250mW
500mW
FREQUENCY (Hz)
09960-011
Figure 13. THD + N vs. Frequency, Class-D Amplifier, Mono Operation,
= 4 Ω, PVDD = 3.6 V
R
L
100
PVDD = 4.2V
R
=4Ω + 15µH
L
10
250mW
1.5W
1W
1
0.1
THD + N (%)
0.01
0.001
10100k
1001k10k
FREQUENCY (Hz)
500mW
Figure 11. THD + N vs. Frequency, Class-D Amplifier, Mono Operation,
= 8 Ω, PVDD = 4.2 V
R
L
100
PVDD = 5V
R
= 8Ω + 33µH
L
10
1
0.1
THD + N (%)
0.01
0.001
10100k
1.2W
250mW
1001k10k
FREQUENCY (Hz)
1W
500mW
Figure 12. THD + N vs. Frequency, Class-D Amplifier, Mono Operation,
= 8 Ω, PVDD = 5.0 V
R
L
0.001
10100k
09960-012
1001k10k
FREQUENCY (Hz)
500mW
09960-013
Figure 14. THD + N vs. Frequency, Class-D Amplifier, Mono Operation,
= 4 Ω, PVDD = 4.2 V
R
L
100
PVDD = 5V
R
= 4Ω + 15µH
L
10
1
0.1
THD + N (%)
0.01
0.001
10100k
09960-014
2.2W
250mW
1001k10k
FREQUENCY (Hz)
1.5W
500mW
09960-015
Figure 15. THD + N vs. Frequency, Class-D Amplifier, Mono Operation,
= 4 Ω, PVDD = 5.0 V
R
L
Rev. 0 | Page 10 of 36
SSM2804
2.0
f = 1kHz
1.8
R
= 8Ω + 33µH
1.6
1.4
1.2
1.0
0.8
0.6
OUTPUT POWER (W)
0.4
0.2
L
THD + N = 1%
THD + N = 10%
0
2.53.03.54.04.55.0
SUPPLY VOLTAGE (V)
THD + N = 0.1%
Figure 16. Output Power vs. Supply Voltage, Class-D Amplifier, RL = 8 Ω
09960-016
3.5
f = 1kHz
3.0
R
= 4Ω + 15µH
L
2.5
2.0
1.5
OUTPUT POWER (W)
1.0
0.5
THD + N = 10%
0
2.53.03.54.04.55.0
THD + N = 1%
THD + N = 0.1%
SUPPLY VOLTAGE (V)
Figure 19. Output Power vs. Supply Voltage, Class-D Amplifier, RL = 4 Ω
09960-017
400
RL = 8Ω + 33µH
350
300
250
200
150
SUPPLY CURRENT (mA)
100
PVDD = 2.7V
50
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
02
PVDD = 3.6V
OUTPUT PO WER (W)
PVDD = 4.2V
PVDD = 5V
.0
09960-018
Figure 17. Supply Current vs. Output Power into 8 Ω, Class-D Amplifier
100
PVDD = 2.7V
90
80
70
60
PVDD = 3.6V
50
40
EFFICIENCY (%)
30
20
10
0
00.20.40. 60.81.01.21.41.61.8
PVDD = 5V
PVDD = 4.2V
OUTPUT PO WER (W)
RL = 8Ω + 33µH
09960-020
Figure 18. Efficiency vs. Output Power into 8 Ω, Class-D Amplifier
800
RL = 4Ω + 15µH
700
600
500
400
300
PVDD = 2.7V
SUPPLY CURRENT (mA)
200
100
0
03
Figure 20. Supply Current vs. Output Power into 4 Ω, Class-D Amplifier