Analog Devices SSM2019 Datasheet

Self-Contained

TOP VIEW

(Not to Scale)

8

7

6

5

1

2

3

4

RG

1

–IN

+IN

RG

2

V+

OUT

REFERENCEV–

SSM2019

a

FEATURES
Excellent Noise Performance: 1.0 nV/÷Hz or

1.5 dB Noise Figure

Ultra-low THD: < 0.01% @ G = 100 Over the

Full Audio Band
Wide Bandwidth: 1 MHz @ G = 100
High Slew Rate: 16 V/s @ G = 10
10 V rms Full-Scale Input,

G = 1, V
Unity Gain Stable
True Differential Inputs
Subaudio 1/f Noise Corner
8-Lead PDIP or 16-Lead SOIC
Only One External Component Required
Very Low Cost
Extended Temperature Range: –40C to +85C

APPLICATIONS
Audio Mix Consoles
Intercom/Paging Systems
2-Way Radio
Sonar
Digital Audio Systems

= 18 V

S

+IN

Audio Preamplifier

SSM2019

FUNCTIONAL BLOCK DIAGRAM

V–

–IN

RG

1

RG

2

5k

5k

8-Lead Narrow Body SOIC (RN Suffix)*

1

PIN CONNECTIONS

8-Lead PDIP (N Suffix)

1

5k

5k

5k

REFERENCE

V+

5k

OUT

V–

GENERAL DESCRIPTION

The SSM2019 is a latest generation audio preamplifier, combin­ing SSM preamplifier design expertise with advanced processing.
The result is excellent audio performance from a monolithic
device, requiring only one external gain set resistor or potentiom­eter. The SSM2019 is further enhanced by its unity gain stability.

Key specifications include ultra-low noise (1.5 dB noise figure) and
THD (<0.01% at G = 100), complemented by wide bandwidth
and high slew rate.

Applications for this low cost device include microphone pream­plifiers and bus summing amplifiers in professional and consumer
audio equipment, sonar, and other applications requiring a low
noise instrumentation amplifier with high gain capability.

REV. 0

16-Lead Wide Body SOIC (RW Suffix)

1

NC

2

RG

1

3

NC

SSM2019

4

–IN

TOP VIEW

5

+IN

(Not to Scale)

6

NC

7

V–

NC

8

NC = NO CONNECT

*Consult factory for availability.

16

NC

RG

15

2

14

NC

13

V+

12

NC

11

OUT

10

REFERENCE

NC

9

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © 2003 Analog Devices, Inc. All rights reserved.

(VS = 15 V and –40C £ TA £ +85C, unless otherwise noted. Typical specifications

SSM2019–SPECIFICATIONS

Parameter Symbol Conditions Min Typ Max Unit

DISTORTION PERFORMANCE

Total Harmonic Distortion Plus Noise THD + N f = 1 kHz, G = 1000 0.017 %

NOISE PERFORMANCE

Input Referred Voltage Noise Density e

Input Current Noise Density i

DYNAMIC RESPONSE

Slew Rate SR G = 10 16 V/ms

Small Signal Bandwidth BW

INPUT

Input Offset Voltage V
Input Bias Current I
Input Offset Current Ios V
Common-Mode Rejection CMR V

Power Supply Rejection PSR V

Input Voltage Range IVR ± 12 V
Input Resistance R

OUTPUT

Output Voltage Swing V
Output Offset Voltage V
Maximum Capacitive Load Drive 5000 pF
Short Circuit Current Limit I
Output Short Circuit Duration Continuous sec

GAIN

Gain Accuracy

Maximum Gain G 70 dB

REFERENCE INPUT

Input Resistance 10 kW
Voltage Range ± 12 V
Gain to Output 1 V/V

POWER SUPPLY

Supply Voltage Range V
Supply Current I

Specifications subject to change without notice.

n

n

–3 dB

IOS

B

IN

O

OOS

SC

10 kW T

=

R

G

G – 1 RG = 10 W, G = 1000 0.5 0.1 dB

S

SY

apply at TA = 25C.)

V

= 7 V rms

O

= 2 kW

R

L

f = 1 kHz, G = 100 0.0085 %
f = 1 kHz, G = 10 0.0035 %
f = 1 kHz, G = 1 0.005 %
BW = 80 kHz

f = 1 kHz, G = 1000 1.0 nV/÷Hz
f = 1 kHz, G = 100 1.7 nV/÷Hz
f = 1 kHz, G = 10 7 nV/÷Hz
f = 1 kHz, G = 1 50 nV/÷Hz
f = 1 kHz, G = 1000 2 pA/÷Hz

= 2 kW

R

L

C

= 100 pF

L

G = 1000 200 kHz
G = 100 1000 kHz
G = 10 1600 kHz
G = 1 2000 kHz

VCM = 0 V 3 10 mA

= 0 V ± 0.001 ± 1.0 mA

CM

= ± 12 V

CM

G = 1000 110 130 dB
G = 100 90 113 dB
G = 10 70 94 dB
G = 1 50 74 dB

= ± 5 V to ± 18 V

S

G = 1000 110 124 dB
G = 100 110 118 dB
G = 10 90 101 dB
G = 1 70 82 dB

Differential, G = 1000 1 MW

G = 1 30 MW

Common Mode, G = 1000 5.3 MW

G = 1 7.1 MW

RL = 2 kW, TA = 25∞C ± 13.5 ± 13.9 V

Output-to-Ground Short ± 50 mA

= 25∞C

A

= 101 W, G = 100 0.5 0.2 dB

R

G

= 1.1 kW, G = 10 0.5 0.2 dB

R

G

= , G = 1 0.1 0.2 dB

R

G

± 5 ± 18 V

VCM = 0 V, RL =  ± 4.6 ± 7.5 mA
VCM = 0 V, VS = ± 18 V, RL =  ± 4.7 ± 8.5 mA

0.05 0.25 mV

430mV

–2–

REV. 0

SSM2019

FREQUENCY – Hz

RTI, VOLTAGE NOISE DENSITY – nV/ Hz

0.1
110100 1k 10k

1

10

100

TA = 25ⴗC
V

S

= ⴞ15V

G = 1000

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 19 V

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage

Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . 10 sec

Storage Temperature Range . . . . . . . . . . . . –65∞C to +150∞C

Junction Temperature (T

) . . . . . . . . . . . . . –65∞C to +150∞C

J

Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300∞C

Operating Temperature Range . . . . . . . . . . . –40∞C to +85∞C

Thermal Resistance

2

8-Lead PDIP (N) . . . . . . . . . . . . . . . . . . . . . . . ␪JA = 96∞C/W

1

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

SSM2019BN –40∞C to +85∞C8-Lead PDIP N-8
SSM2019BRW –40∞C to +85∞C 16-Lead SOIC RW-16
SSM2019BRWRL –40∞C to +85∞C 16-Lead SOIC, Reel RW-16
SSM2019BRN* –40∞C to +85∞C8-Lead SOIC RN-8
SSM2019BRNRL* –40∞C to +85∞C8-Lead SOIC, Reel RN-8

*Consult factory for availability.

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ␪JC = 37∞C/W

16-Lead SOIC (RW) . . . . . . . . . . . . . . . . . . . . ␪

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ␪

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

qJA is specified for worst-case mounting conditions, i.e., qJA is specified for device

in socket for PDIP; qJA is specified for device soldered to printed circuit board for
SOIC package.

= 92∞C/W

JA

= 27∞C/W

JC

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the SSM2019 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

Typical Performance Characteristics

0.1

G = 1000

0.01

THD + N – %

0.001

0.0001
10

ⴞ15V VS ⴞ18V
7Vrms
R

600⍀

L

BW = 80kHz

20 100 1k 10k 20k

TPC 1. Typical THD + Noise vs. Gain

REV. 0

G = 100

G = 1

G = 10

VO 10Vrms

FREQUENCY – Hz

TPC 2. Voltage Noise Density vs. Frequency

–3–