Self-Contained
TOP VIEW
(Not to Scale)
8
7
6
5
1
2
3
4
RG
1
–IN
+IN
RG
2
V+
OUT
REFERENCEV–
SSM2019
a
FEATURES
Excellent Noise Performance: 1.0 nV/÷Hz or
1.5 dB Noise Figure
Ultra-low THD: < 0.01% @ G = 100 Over the
Full Audio Band
Wide Bandwidth: 1 MHz @ G = 100
High Slew Rate: 16 V/s @ G = 10
10 V rms Full-Scale Input,
G = 1, V
Unity Gain Stable
True Differential Inputs
Subaudio 1/f Noise Corner
8-Lead PDIP or 16-Lead SOIC
Only One External Component Required
Very Low Cost
Extended Temperature Range: –40C to +85C
APPLICATIONS
Audio Mix Consoles
Intercom/Paging Systems
2-Way Radio
Sonar
Digital Audio Systems
= 18 V
S
+IN
Audio Preamplifier
SSM2019
FUNCTIONAL BLOCK DIAGRAM
V–
–IN
RG
1
RG
2
5k
5k
8-Lead Narrow Body SOIC (RN Suffix)*
1
PIN CONNECTIONS
8-Lead PDIP (N Suffix)
1
5k
5k
5k
REFERENCE
V+
5k
OUT
V–
GENERAL DESCRIPTION
The SSM2019 is a latest generation audio preamplifier, combining SSM preamplifier design expertise with advanced processing.
The result is excellent audio performance from a monolithic
device, requiring only one external gain set resistor or potentiometer. The SSM2019 is further enhanced by its unity gain stability.
Key specifications include ultra-low noise (1.5 dB noise figure) and
THD (<0.01% at G = 100), complemented by wide bandwidth
and high slew rate.
Applications for this low cost device include microphone preamplifiers and bus summing amplifiers in professional and consumer
audio equipment, sonar, and other applications requiring a low
noise instrumentation amplifier with high gain capability.
REV. 0
16-Lead Wide Body SOIC (RW Suffix)
1
NC
2
RG
1
3
NC
SSM2019
4
–IN
TOP VIEW
5
+IN
(Not to Scale)
6
NC
7
V–
NC
8
NC = NO CONNECT
*Consult factory for availability.
16
NC
RG
15
2
14
NC
13
V+
12
NC
11
OUT
10
REFERENCE
NC
9
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved.
(VS = 15 V and –40C £ TA £ +85C, unless otherwise noted. Typical specifications
SSM2019–SPECIFICATIONS
Parameter Symbol Conditions Min Typ Max Unit
DISTORTION PERFORMANCE
Total Harmonic Distortion Plus Noise THD + N f = 1 kHz, G = 1000 0.017 %
NOISE PERFORMANCE
Input Referred Voltage Noise Density e
Input Current Noise Density i
DYNAMIC RESPONSE
Slew Rate SR G = 10 16 V/ms
Small Signal Bandwidth BW
INPUT
Input Offset Voltage V
Input Bias Current I
Input Offset Current Ios V
Common-Mode Rejection CMR V
Power Supply Rejection PSR V
Input Voltage Range IVR ± 12 V
Input Resistance R
OUTPUT
Output Voltage Swing V
Output Offset Voltage V
Maximum Capacitive Load Drive 5000 pF
Short Circuit Current Limit I
Output Short Circuit Duration Continuous sec
GAIN
Gain Accuracy
Maximum Gain G 70 dB
REFERENCE INPUT
Input Resistance 10 kW
Voltage Range ± 12 V
Gain to Output 1 V/V
POWER SUPPLY
Supply Voltage Range V
Supply Current I
Specifications subject to change without notice.
n
n
–3 dB
IOS
B
IN
O
OOS
SC
10 kW T
=
R
G
G – 1 RG = 10 W, G = 1000 0.5 0.1 dB
S
SY
apply at TA = 25C.)
V
= 7 V rms
O
= 2 kW
R
L
f = 1 kHz, G = 100 0.0085 %
f = 1 kHz, G = 10 0.0035 %
f = 1 kHz, G = 1 0.005 %
BW = 80 kHz
f = 1 kHz, G = 1000 1.0 nV/÷Hz
f = 1 kHz, G = 100 1.7 nV/÷Hz
f = 1 kHz, G = 10 7 nV/÷Hz
f = 1 kHz, G = 1 50 nV/÷Hz
f = 1 kHz, G = 1000 2 pA/÷Hz
= 2 kW
R
L
C
= 100 pF
L
G = 1000 200 kHz
G = 100 1000 kHz
G = 10 1600 kHz
G = 1 2000 kHz
VCM = 0 V 3 10 mA
= 0 V ± 0.001 ± 1.0 mA
CM
= ± 12 V
CM
G = 1000 110 130 dB
G = 100 90 113 dB
G = 10 70 94 dB
G = 1 50 74 dB
= ± 5 V to ± 18 V
S
G = 1000 110 124 dB
G = 100 110 118 dB
G = 10 90 101 dB
G = 1 70 82 dB
Differential, G = 1000 1 MW
G = 1 30 MW
Common Mode, G = 1000 5.3 MW
G = 1 7.1 MW
RL = 2 kW, TA = 25∞C ± 13.5 ± 13.9 V
Output-to-Ground Short ± 50 mA
= 25∞C
A
= 101 W, G = 100 0.5 0.2 dB
R
G
= 1.1 kW, G = 10 0.5 0.2 dB
R
G
= , G = 1 0.1 0.2 dB
R
G
± 5 ± 18 V
VCM = 0 V, RL = ± 4.6 ± 7.5 mA
VCM = 0 V, VS = ± 18 V, RL = ± 4.7 ± 8.5 mA
0.05 0.25 mV
430mV
–2–
REV. 0
SSM2019
FREQUENCY – Hz
RTI, VOLTAGE NOISE DENSITY – nV/ Hz
0.1
110100 1k 10k
1
10
100
TA = 25ⴗC
V
S
= ⴞ15V
G = 1000
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 19 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage
Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . 10 sec
Storage Temperature Range . . . . . . . . . . . . –65∞C to +150∞C
Junction Temperature (T
) . . . . . . . . . . . . . –65∞C to +150∞C
J
Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300∞C
Operating Temperature Range . . . . . . . . . . . –40∞C to +85∞C
Thermal Resistance
2
8-Lead PDIP (N) . . . . . . . . . . . . . . . . . . . . . . . JA = 96∞C/W
1
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
SSM2019BN –40∞C to +85∞C8-Lead PDIP N-8
SSM2019BRW –40∞C to +85∞C 16-Lead SOIC RW-16
SSM2019BRWRL –40∞C to +85∞C 16-Lead SOIC, Reel RW-16
SSM2019BRN* –40∞C to +85∞C8-Lead SOIC RN-8
SSM2019BRNRL* –40∞C to +85∞C8-Lead SOIC, Reel RN-8
*Consult factory for availability.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JC = 37∞C/W
16-Lead SOIC (RW) . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
qJA is specified for worst-case mounting conditions, i.e., qJA is specified for device
in socket for PDIP; qJA is specified for device soldered to printed circuit board for
SOIC package.
= 92∞C/W
JA
= 27∞C/W
JC
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the SSM2019 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
Typical Performance Characteristics
0.1
G = 1000
0.01
THD + N – %
0.001
0.0001
10
ⴞ15V VS ⴞ18V
7Vrms
R
600⍀
L
BW = 80kHz
20 100 1k 10k 20k
TPC 1. Typical THD + Noise vs. Gain
REV. 0
G = 100
G = 1
G = 10
VO 10Vrms
FREQUENCY – Hz
TPC 2. Voltage Noise Density vs. Frequency
–3–
SSM2019
100
10
f = 1kHz OR 10kHz
1
RTI VOLTAGE NOISE DENSITY – nV/ Hz
0.1
1
10 100
GAIN
TA = 25 C
VS = 15V
TPC 3. RTI Voltage Noise Density
vs. Gain
16
T
= 25 C
A
= 15V
V
S
14
12
10
8
6
OUTPUT VOLTAGE – V
4
2
0
10 1k 10k
100
LOAD RESISTANCE –
G 10
G = 1
1k
100k
100
90
80
70
60
50
40
IMPEDANCE –
30
20
10
0
100
1k 10k 100k
FREQUENCY – Hz
TPC 4. Output Impedance vs.
Frequency
40
TA = 25 C
f
= 100kHz
30
) – V
IN–
– V
IN+
20
10
INPUT SWING (V
0
10 30
SUPPLY VOLTAGE (V+ – V–) – V
20
1M
30
GAIN 10
25
20
T
= 25 C
A
R
= 2k
L
V
= 15V
S
15
PEAK-TO-PEAK VOLTAGE – V
10
100
1k 10k 100k
GAIN = 1
FREQUENCY – Hz
1M
TPC 5. Maximum Output Swing
vs. Frequency
20
TA = 25 C
) – V
15
OUT–
– V
OUT+
10
5
OUTPUT SWING (V
400
0
10 30
SUPPLY VOLTAGE (V+ – V–) – V
20
400
TPC 6. Output Voltage vs. Load
Resistance
200
VCM = 100mV
= 15V
V
180
S
= 25C
T
A
160
140
G = 1000
120
G = 100
100
G = 10
80
CMRR – dB
G = 1
60
40
20
0
100 1k 10k
10
FREQUENCY– Hz
TPC 9. CMRR vs. Frequency
100k
TPC 7. Input Voltage Range vs.
Supply Voltage
150
G = 1000
125
100
75
+PSRR – dB
50
VCM = 100mV
25
T
V
0
10
G = 10
= 25 C
A
= 15V
S
100 1k 10k
FREQUENCY – Hz
G = 100
G = 1
100k
TPC 10. Positive PSRR vs. Frequency
TPC 8. Output Voltage Range vs.
Supply Voltage
150
125
G = 10
100
G = 1
75
–PSRR – dB
50
VS = 100mV
25
T
A
V
S
0
10
= 25 C
= 15V
100 1k 10k
G = 1000
G = 100
100k
FREQUENCY – Hz
TPC 11. Negative PSRR vs. Frequency
–4–
REV. 0
SSM2019
TEMPERATURE – C
V
OOS
– mV
–8
–25–50 25 75 100
V+/V– = 15V
050
–7
–6
–5
–4
–3
–2
–1
0
0.040
0.035
0.030
0.025
0.020
– mV
IOS
V
0.015
0.010
0.005
– mV
OOS
V
30
20
10
–10
–20
0
–50
–25 0 25 50 75 100
TEMPERATURE – C
TPC 12. V
0
vs. Temperature
IOS
V+/V– = 15V
TA = 25C
0.02
0.01
0
–0.01
– mV
–0.02
IOS
V
–0.03
–0.04
–0.05
–0.06
0 10 20 25 30 35 40515
SUPPLY VOLTAGE (VCC – VEE) – V
TPC 13. V
5
4
3
– A
B
I
2
1
TA = 25C
vs. Supply Voltage
IOS
V+/V– = 15V
IB+ OR I
B–
TPC 14. V
6
5
4
3
– A
B
I
2
1
vs. Temperature
OOS
TA = 25C
–30
0 510 20303540
TPC 15. V
8
6
4
2
0
–2
–4
SUPPLY CURRENT – mA
–6
–8
–50
TPC 18. Supply Current vs.
Temperature
REV. 0
SUPPLY VOLTAGE (VCC – VEE) – V
I+ @ V+/V– = 18V
I+ @ V+/V– = 15V
15 25
vs. Supply Voltage
OOS
I– @ V+/V– = 15V
I– @ V+/V– = 18V
–25 0 25 50 75 100
TEMPERATURE – C
0
–50
–25 0 25 50 75 100
TEMPERATURE – C
TPC 16. IB vs. Temperature
8
TA = 25C
6
4
2
0
–2
–4
SUPPLY CURRENT – mA
–6
–8
0510 20 30 35 40
SUPPLY VOLTAGE (VCC – VEE) – V
I+
I–
15 25
TPC 19. Supply Current vs. Supply
Voltage
–5–
0
0
10 20 30 40
SUPPLY VOLTAGE (V
– V
TPC 17. IB vs. Supply Voltage
16
14
12
10
8
6
4
SUPPLY CURRENT – mA
2
0
50
10 15 20
SUPPLY VOLTAGE – V
TPC 20. ISY vs. Supply Voltage
) – V
TA = 25 C
SSM2019
V+
+IN
R
G1
SSM2019
R
G2
V–
+ 1
R
G
OUT
REFERENCE
G =
(+IN) – (– IN)
R
G
–IN
V
OUT
10k⍀
=
Figure 1. Basic Circuit Connections
GAIN
The SSM2019 only requires a single external resistor to set the
voltage gain. The voltage gain, G, is:
k
101W
G
=+
R
G
and the external gain resistor, RG, is:
k
101W
R
=
G
G
–
For convenience, Table I lists various values of RG for common
gain levels.
Table I. Values of RG for Various Gain Levels
RG (⍀)AVdB
NC 1 0
4.7 k 3.2 10
1.1 k 10 20
330 31.3 30
100 100 40
32 314 50
10 1000 60
The voltage gain can range from 1 to 3500. A gain set resistor is
not required for unity gain applications. Metal film or wire-wound
resistors are recommended for best results.
The total gain accuracy of the SSM2019 is determined by the
tolerance of the external gain set resistor, R
, combined with the
G
gain equation accuracy of the SSM2019. Total gain drift combines
the mismatch of the external gain set resistor drift with that of
the internal resistors (20 ppm/∞C typ).
Bandwidth of the SSM2019 is relatively independent of gain,
as shown in Figure 2. For a voltage gain of 1000, the SSM2019
has a small-signal bandwidth of 200 kHz. At unity gain, the
bandwidth of the SSM2019 exceeds 4 MHz.
VS = ⴞ15V
T
= 25ⴗC
A
60
40
VOLTA GE GAIN – dB
20
0
1k 10M
10k 100k 1M
Figure 2. Bandwidth for Various Values of Gain
NOISE PERFORMANCE
The SSM2019 is a very low noise audio preamplifier exhibiting
Hz
a typical voltage noise density of only 1 nV/÷
at 1 kHz. The
exceptionally low noise characteristics of the SSM2019 are in
part achieved by operating the input transistors at high collector
currents since the voltage noise is inversely proportional to the
square root of the collector current. Current noise, however, is
directly proportional to the square root of the collector current.
As a result, the outstanding voltage noise performance of the
SSM2019 is obtained at the expense of current noise performance.
At low preamplifier gains, the effect of the SSM2019 voltage
and current noise is insignificant.
The total noise of an audio preamplifier channel can be calculated by:
2
EeiRe
2
=+ +
nnnSt
2
()
where:
E
= total input referred noise
n
e
= amplifier voltage noise
n
i
= amplifier current noise
n
R
= source resistance
S
e
= source resistance thermal noise
t
For a microphone preamplifier, using a typical microphone
impedance of 150 W, the total input referred noise is:
EnVHzpAHz nVHz
=+¥+ =()(/ )(./)
12150 1 6
n
nV Hz kHz
./@
193 1
2
22
W
where:
e
= 1 nV/÷Hz @ 1 kHz, SSM2019 e
n
in = 2 pA/÷Hz @ 1 kHz, SSM2019 i
n
n
RS = 150 W, microphone source impedance
e
= 1.6 nV/÷Hz @ 1 kHz, microphone thermal noise
t
This total noise is extremely low and makes the SSM2019
virtually transparent to the user.
–6–
REV. 0
SSM2019
T
T
T
INPUTS
The SSM2019 has protection diodes across the base emitter
junctions of the input transistors. These prevent accidental
avalanche breakdown, which could seriously degrade noise
performance. Additional clamp diodes are also provided to prevent
the inputs from being forced too far beyond the supplies.
(INVERTING)
RANSDUCER
(NONINVERTING)
SSM2019
a. Single-Ended
R
RANSDUCER
R
SSM2019
b. Pseudo-Differential
RANSDUCER
SSM2019
c. True Differential
Figure 3. Three Ways of Interfacing Transducers for
High Noise Immunity
Although the SSM2019 inputs are fully floating, care must be
exercised to ensure that both inputs have a dc bias connection
capable of maintaining them within the input common-mode
range. The usual method of achieving this is to ground one side
of the transducer as in Figure 3a. An alternative way is to float
the transducer and use two resistors to set the bias point as in
Figure 3b. The value of these resistors can be up to 10 kW, but
they should be kept as small as possible to limit common-mode
pickup. Noise contribution by resistors is negligible since it is
attenuated by the transducer’s impedance. Balanced transducers
give the best noise immunity and interface directly as in Figure 3c.
For stability, it is required to put an RF bypass capacitor directly
across the inputs, as shown in Figures 3 and 4. This capacitor
should be placed as close as possible to the input terminals. Good
RF practice should also be followed in layout and power supply
bypassing, since the SSM2019 uses very high bandwidth devices.
REFERENCE TERMINAL
The output signal is specified with respect to the reference terminal,
which is normally connected to analog ground. The reference
may also be used for offset correction or level shifting. A reference source resistance will reduce the common-mode rejection
by the ratio of 5 kW/R
. If the reference source resistance is
REF
1 W, then the CMR will be reduced to 74 dB (5 kW/1 W = 74 dB).
COMMON-MODE REJECTION
Ideally, a microphone preamplifier responds to only the difference
between the two input signals and rejects common-mode voltages
and noise. In practice, there is a small change in output voltage
when both inputs experience the same common-mode voltage
change; the ratio of these voltages is called the common-mode
gain. Common-mode rejection (CMR) is the logarithm of the ratio
of differential-mode gain to common-mode gain, expressed in dB.
PHANTOM POWERING
A typical phantom microphone powering circuit is shown in
Figure 4. Z1 to Z4 provide transient overvoltage protection for
the SSM2019 whenever microphones are plugged in or unplugged.
R3
6.8k
1%
R4
6.8k
1%
C1
R1
10k
R2
10k
C2
Z1
Z2
Z3
Z4
200pF
C4
R
G
+18V
R
G1
SSM2019
R
G2
–18V
V
OUT
+48V
+IN
R5
100
C3
47F
–IN
C1, C2: 22F TO 47F, 63V, TANTALUM OR ELECTROLYTIC
Z1–Z4: 12V, 1/2W
Figure 4. SSM2019 in Phantom Powered Microphone Circuit
REV. 0
–7–
SSM2019
BUS SUMMING AMPLIFIER
In addition to its use as a microphone preamplifier, the SSM2019
can be used as a very low noise summing amplifier. Such a circuit
is particularly useful when many medium impedance outputs
are summed together to produce a high effective noise gain.
The principle of the summing amplifier is to ground the SSM2019
inputs. Under these conditions, Pins 1 and 8 are ac virtual grounds
sitting about 0.55 V below ground. To remove the 0.55 V offset,
the circuit of Figure 5 is recommended.
A2 forms a “servo” amplifier feeding the SSM2019 inputs. This
places Pins l and 8 at a true dc virtual ground. R4 in conjunction
with C2 removes the voltage noise of A2, and in fact just about
any operational amplifier will work well here since it is removed
from the signal path. If the dc offset at Pins l and 8 is not too
OUTLINE DIMENSIONS
8-Lead Plastic Dual In-Line Package [PDIP]
(N-8)
Dimensions shown in inches and (millimeters)
0.375 (9.53)
0.365 (9.27)
0.355 (9.02)
8
1
0.100 (2.54)
0.180
(4.57)
MAX
0.150 (3.81)
0.130 (3.30)
0.110 (2.79)
0.022 (0.56)
0.018 (0.46)
0.014 (0.36)
CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
COMPLIANT TO JEDEC STANDARDS MO-095AA
BSC
5
4
0.295 (7.49)
0.285 (7.24)
0.275 (6.98)
0.015
(0.38)
MIN
SEATING
PLANE
0.060 (1.52)
0.050 (1.27)
0.045 (1.14)
0.325 (8.26)
0.310 (7.87)
0.300 (7.62)
0.150 (3.81)
0.135 (3.43)
0.120 (3.05)
0.015 (0.38)
0.010 (0.25)
0.008 (0.20)
critical, then the servo loop can be replaced by the diode biasing
scheme of Figure 5. If ac coupling is used throughout, then Pins 2
and 3 may be directly grounded.
+ IN
– IN
R2
6.2k
C1
0.33F
33k
A2
SSM2019
R3
R4
5.1k
C2
200F
TO PINS
2 AND 3
IN4148
V
V
OUT
R5
10k
Figure 5. Bus Summing Amplifier
16-Lead Standard Small Outline Package [SOIC]
Wide Body
(RW-16)
Dimensions shown in millimeters and (inches)
10.50 (0.4134)
10.10 (0.3976)
16
1
1.27 (0.0500)
BSC
0.30 (0.0118)
0.10 (0.0039)
COPLANARITY
0.10
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
0.51 (0.0201)
0.33 (0.0130)
COMPLIANT TO JEDEC STANDARDS MS-013AA
9
7.60 (0.2992)
7.40 (0.2913)
8
2.65 (0.1043)
2.35 (0.0925)
SEATING
PLANE
10.65 (0.4193)
10.00 (0.3937)
0.32 (0.0126)
0.23 (0.0091)
0.75 (0.0295)
0.25 (0.0098)
8
0
45
1.27 (0.0500)
0.40 (0.0157)
C02718–0–2/03(0)
8-Lead Standard Small Outline Package [SOIC]*
Narrow Body
(RN-8)
Dimensions shown in millimeters and (inches)
5.00 (0.1968)
4.80 (0.1890)
4.00 (0.1574)
3.80 (0.1497)
0.25 (0.0098)
0.10 (0.0040)
COPLANARITY
0.10
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
85
1.27 (0.0500)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012AA
BSC
6.20 (0.2440)
5.80 (0.2284)
41
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
0.33 (0.0130)
0.25 (0.0098)
0.19 (0.0075)
0.50 (0.0196)
0.25 (0.0099)
8
0
1.27 (0.0500)
0.41 (0.0160)
*Consult factory for availability.
–8–
PRINTED IN U.S.A.
45
REV. 0
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