Analog Devices Ref19X G Datasheet
Precision Micropower, Low Dropout
TP
V
S
SLEEP
GND
NC = NO CONNECT
TP PINS ARE FACTORY TEST POINTS,
NO USER CONNECTION
NC
NC
OUTPUT
TP
1
2
3
4
8
7
6
5
REF19x
SERIES
TOP VIEW
(Not to Scale)
Voltage References
REF19x Series
FEATURES
Initial Accuracy: ⴞ2 mV Max
Temperature Coefficient: 5 ppm/ⴗC Max
Low Supply Current: 45 A Max
Sleep Mode: 15 A Max
Low Dropout Voltage
Load Regulation: 4 ppm/mA
Line Regulation: 4 ppm/V
High Output Current: 30 mA
Short-Circuit Protection
APPLICATIONS
Portable Instrumentation
A/D and D/A Converters
Smart Sensors
Solar Powered Applications
Loop Current Powered Instrumentations
GENERAL DESCRIPTION
The REF19x series precision band gap voltage references use a
patented temperature drift curvature correction circuit and laser
trimming of highly stable thin-film resistors to achieve a very
low temperature coefficient and a high initial accuracy.
The REF19x series is made up of micropower, low dropout voltage
(LDV) devices providing a stable output voltage from supplies as
low as 100 mV above the output voltage and consuming less than
45 µA of supply current. In sleep mode, which is enabled by apply-
ing a low TTL or CMOS level to the SLEEP pin, the output is
turned off and supply current is further reduced to less than 15 µA.
The REF19x series references are specified over the extended
industrial temperature range (–40°C to +85°C) with typical
performance specifications over –40°C to +125°C for applications
such as automotive.
All electrical grades are available in 8-lead SOIC; the PDIP and
TSSOP are available only in the lowest electrical grade. Products
are also available in die form.
Test Pins (TP)
The test pins, Pin 1 and Pin 5, are reserved for in-package
Zener zap. To achieve the highest level of accuracy at the output,
the Zener zapping technique is used to trim the output voltage.
Since each unit may require a different amount of adjustment, the
resistance value at the test pins will vary widely from pin to pin as
well as from part to part. The user should not make any physical
or electrical connections to Pin 1 and Pin 5.
PIN CONFIGURATIONS
8-Lead SOIC and TSSOP
(S Suffix and RU Suffix)
1
TP
2
S
3
4
REF19x
SERIES
TOP VIEW
(Not to Scale)
V
SLEEP
GND
NC = NO CONNECT
TP PINS ARE FACTORY TEST POINTS,
NO USER CONNECTION
8
7
6
5
NC
NC
OUTPUT
TP
8-Lead PDIP (P Suffix)
Table I.
Part Nominal Output
Number Voltage (V)
REF191 2.048
REF192 2.50
REF193 3.00
REF194 4.50
REF195 5.00
REF196 3.30
REF198 4.096
REV. G
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
Information furnished by Analog Devices is believed to be accurate and
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © 2004 Analog Devices, Inc. All rights reserved.
REF19x Series
REF191–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ VS = 3.3 V, TA = 25ⴗC, unless otherwise noted.)
Parameter Symbol Condition Min Typ Max Unit
INITIAL ACCURACY
E Grade V
1
I
O
= 0 mA 2.046 2.048 2.050 V
OUT
F Grade 2.043 2.053 V
G Grade 2.038 2.058 V
LINE REGULATION
E Grade ⌬VO/⌬V
2
IN
3.0 V ≤ VS ≤ 15 V, I
= 0 mA 2 4 ppm/V
OUT
F and G Grades 48ppm/V
LOAD REGULATION
E Grade ⌬VO/⌬V
2
LOADVS
= 5.0 V, 0 mA ≤ I
≤ 30 mA 4 10 ppm/mA
OUT
F and G Grades 615ppm/mA
DROPOUT VOLTAGE V
LONG-TERM STABILITY
3
NOISE VOLTAGE e
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1,000 hours life test performed on three independent wafer lots at 12 5°C, with an LTPD of 1.3.
Specifications subject to change without notice.
S
DV
N
– V
O
O
VS = 3.15 V, I
V
= 3.3 V, I
S
VS = 3.6 V, I
= 2 mA 0.95 V
LOAD
= 10 mA 1.25 V
LOAD
= 30 mA 1.55 V
LOAD
1,000 Hours @ 125°C 1.2 mV
0.1 Hz to 10 Hz 20 µV p-p
ELECTRICAL CHARACTERISTICS
(@ VS = 3.3 V, –40ⴗC ≤ TA ≤ +85ⴗC, unless otherwise noted.)
Parameter Symbol Condition Min Typ Max Unit
TEMPERATURE COEFFICIENT
E Grade TCVO/°CI
F Grade 510ppm/°C
G Grade
LINE REGULATION
3
4
E Grade ⌬VO/⌬V
1, 2
= 0 mA 2 5 ppm/°C
OUT
10 25 ppm/°C
IN
3.0 V ≤ VS ≤ 15 V, I
= 0 mA 5 10 ppm/V
OUT
F and G Grades 10 20 ppm/V
LOAD REGULATION
E Grade ⌬VO/⌬V
4
LOADVS
= 5.0 V, 0 mA ≤ I
≤ 25 C 5 15 ppm/mA
OUT
F and G Grades 10 20 ppm/mA
DROPOUT VOLTAGE V
– V
S
O
VS = 3.15 V, I
V
= 3.3 V, I
S
VS = 3.6 V, I
LOAD
LOAD
= 2 mA 0.95 V
LOAD
= 10 mA 1.25 V
= 25 mA 1.55 V
SLEEP PIN
Logic High Input Voltage V
Logic High Input Current I
Logic Low Input Voltage V
Logic Low Input Current I
H
H
L
L
2.4 V
–8 µA
0.8 V
–8 µA
SUPPLY CURRENT No Load 45 µA
Sleep Mode No Load 15 µA
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm /°C.
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
TCVO=(V
MAX–VMIN
)/ VO(T
MAX–TMIN
).
REV. G–2–
REF191–SPECIFICATIONS
REF19x Series
ELECTRICAL CHARACTERISTICS
(@ VS = 3.3 V, –40ⴗC ≤ TA ≤ +125ⴗC, unless otherwise noted.)
Parameter Symbol Condition Min Typ Max Unit
TEMPERATURE COEFFICIENT
E Grade TCVO/°CI
F Grade 5 ppm/°C
G Grade
LINE REGULATION
3
4
E Grade ⌬VO/⌬V
1, 2
= 0 mA 2 ppm/°C
OUT
10 ppm/°C
IN
3.0 V ≤ VS ≤ 15 V, I
= 0 mA 10 ppm/V
OUT
F and G Grades 20 ppm/V
LOAD REGULATION
E Grade ⌬VO/⌬V
4
LOADVS
= 5.0 V, 0 mA ≤ I
≤ 20 mA 10 ppm/mA
OUT
F and G Grades 20 ppm/mA
DROPOUT VOLTAGE V
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm /°C.
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
TCVO =(V
MAX–VMIN
S
)/ VO(T
– V
O
MAX–TMIN
VS = 3.3 V, I
VS = 3.6 V, I
).
= 10 mA 1.25 V
LOAD
= 20 mA 1.55 V
LOAD
REV. G
–3–
REF19x Series
REF192–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ VS = 3.3 V, TA = 25ⴗC, unless otherwise noted.)
Parameter Symbol Condition Min Typ Max Unit
INITIAL ACCURACY
E Grade V
1
I
O
= 0 mA 2.498 2.500 2.502 V
OUT
F Grade 2.495 2.505 V
G Grade 2.490 2.510 V
LINE REGULATION
E Grade ⌬VO/⌬V
2
IN
3.0 V ≤ VS ≤ 15 V, I
= 0 mA 2 4 ppm/V
OUT
F and G Grades 48ppm/V
LOAD REGULATION
E Grade ⌬VO/⌬V
2
LOADVS
= 5.0 V, 0 mA ≤ I
≤ 30 mA 4 10 ppm/mA
OUT
F and G Grades 615ppm/mA
DROPOUT VOLTAGE V
LONG-TERM STABILITY
3
NOISE VOLTAGE e
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1,000 hours life test performed on three independent wafer lots at 12 5°C, with an LTPD of 1.3.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
S
DV
N
– V
O
O
VS = 3.5 V, I
VS = 3.9 V, I
= 10 mA 1.00 V
LOAD
= 30 mA 1.40 V
LOAD
1,000 Hours @ 125°C 1.2 mV
0.1 Hz to 10 Hz 25 µV p-p
(@ VS = 3.3 V, TA = –40ⴗC ≤ TA ≤ +85ⴗC, unless otherwise noted.)
Parameter Symbol Condition Min Typ Max Unit
TEMPERATURE COEFFICIENT
E Grade TCVO/°CI
F Grade 510ppm/°C
G Grade
LINE REGULATION
3
4
E Grade ⌬VO/⌬V
1, 2
= 0 mA 2 5 ppm/°C
OUT
10 25 ppm/°C
IN
3.0 V ≤ VS ≤ 15 V, I
= 0 mA 5 10 ppm/V
OUT
F and G Grades 10 20 ppm/V
LOAD REGULATION
E Grade ⌬VO/⌬V
4
LOADVS
= 5.0 V, 0 mA ≤ I
≤ 25 mA 5 15 ppm/mA
OUT
F and G Grades 10 20 ppm/mA
DROPOUT VOLTAGE V
– V
S
O
VS = 3.5 V, I
VS = 4.0 V, I
= 10 mA 1.00 V
LOAD
= 25 mA 1.50 V
LOAD
SLEEP PIN
Logic High Input Voltage V
Logic High Input Current I
Logic Low Input Voltage V
Logic Low Input Current I
H
H
L
L
2.4 V
–8 µA
0.8 V
–8 µA
SUPPLY CURRENT No Load 45 µA
Sleep Mode No Load 15 µA
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm /°C.
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
TCVO=(V
MAX–VMIN
)/ VO(T
MAX–TMIN
).
–4–
REV. G
REF192–SPECIFICATIONS
REF19x Series
ELECTRICAL CHARACTERISTICS
(@ VS = 3.3 V, –40ⴗC ≤ TA ≤ +125ⴗC, unless otherwise noted.)
Parameter Symbol Condition Min Typ Max Unit
TEMPERATURE COEFFICIENT
E Grade TCVO/°CI
F Grade 5 ppm/°C
G Grade
LINE REGULATION
3
4
E Grade ⌬VO/⌬V
1, 2
= 0 mA 2 ppm/°C
OUT
10 ppm/°C
IN
3.0 V ≤ VS ≤ 15 V, I
= 0 mA 10 ppm/V
OUT
F and G Grades 20 ppm/V
LOAD REGULATION
E Grade ⌬VO/⌬V
4
LOADVS
= 5.0 V, 0 mA ≤ I
≤ 20 mA 10 ppm/mA
OUT
F and G Grades 20 ppm/mA
DROPOUT VOLTAGE V
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm /°C.
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
TCVO=(V
MAX–VMIN
)/ VO(T
– V
S
O
MAX–TMIN
VS = 3.5 V, I
VS = 4.0 V, I
).
= 10 mA 1.00 V
LOAD
= 20 mA 1.50 V
LOAD
REF193–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ VS = 3.3 V, TA = 25ⴗC, unless otherwise noted.)
Parameter Symbol Condition Min Typ Max Unit
INITIAL ACCURACY
G Grade V
LINE REGULATION
G Grades ⌬VO/⌬V
LOAD REGULATION
G Grade ⌬VO/⌬V
DROPOUT VOLTAGE V
LONG-TERM STABILITY
NOISE VOLTAGE e
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1,000 hours life test performed on three independent wafer lots at 12 5°C, with an LTPD of 1.3.
Specifications subject to change without notice.
1
I
O
2
IN
2
LOADVS
– V
S
O
3
DV
N
O
= 0 mA 2.990 3.0 3.010 V
OUT
3.3 V, ≤ VS ≤ 15 V, I
= 5.0 V, 0 mA ≤ I
VS = 3.8 V, I
VS = 4.0 V, I
LOAD
LOAD
= 0 mA 4 8 ppm/V
OUT
≤ 30 mA 6 15 ppm/mA
OUT
= 10 mA 0.80 V
= 30 mA 1.00 V
1,000 Hours @ 125°C 1.2 mV
0.1 Hz to 10 Hz 30 µV p-p
REV. G
–5–
REF19x Series
REF193–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
= 3.3 V, TA = –40ⴗC ≤ TA ≤ +85ⴗC, unless otherwise noted.)
(@ V
S
Parameter Symbol Condition Min Typ Max Unit
TEMPERATURE COEFFICIENT
G Grade
LINE REGULATION
3
4
G Grade ⌬VO/⌬V
LOAD REGULATION
4
G Grade ⌬VO/⌬V
DROPOUT VOLTAGE V
1, 2
TCVO/°CI
IN
LOADVS
– V
S
O
= 0 mA 10 25 ppm/°C
OUT
3.3 V ≤ VS ≤ 15 V, I
= 5.0 V, 0 mA ≤ I
VS = 3.8 V, I
VS = 4.1 V, I
LOAD
LOAD
= 0 mA 10 20 ppm/V
OUT
≤ 25 mA 10 20 ppm/mA
OUT
= 10 mA 0.80 V
= 30 mA 1.10 V
SLEEP PIN
Logic High Input Voltage V
Logic High Input Current I
Logic Low Input Voltage V
Logic Low Input Current I
H
H
L
L
2.4 V
–8 µA
0.8 V
–8 µA
SUPPLY CURRENT No Load 45 µA
Sleep Mode No Load 15 µA
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm /°C.
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
TCVO=(V
MAX–VMIN
)/ VO(T
MAX–TMIN
).
ELECTRICAL CHARACTERISTICS
(@ VS = 3.3 V, –40ⴗC ≤ TA ≤ +125ⴗC, unless otherwise noted.)
Parameter Symbol Condition Min Typ Max Unit
TEMPERATURE COEFFICIENT
G Grade
LINE REGULATION
3
4
G Grade ⌬VO/⌬V
LOAD REGULATION
4
G Grade ⌬VO/⌬V
DROPOUT VOLTAGE V
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm /°C.
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
TCVO=(V
1, 2
MAX–VMIN
TCVO/°CI
IN
LOADVS
– V
S
O
OUT
3.3 V ≤ VS ≤ 15 V, I
VS = 3.8 V, I
VS = 4.1 V, I
)/ VO(T
MAX–TMIN
).
= 0 mA 10 ppm/°C
= 0 mA 20 ppm/V
OUT
= 5.0 V, 0 mA ≤ I
LOAD
LOAD
≤ 20 mA 10 ppm/mA
OUT
= 10 mA 0.80 V
= 20 mA 1.10 V
–6–
REV. G
REF194–SPECIFICATIONS
REF19x Series
ELECTRICAL CHARACTERISTICS
(@ VS = 5.0 V, TA = 25ⴗC, unless otherwise noted.)
Parameter Symbol Condition Min Typ Max Unit
INITIAL ACCURACY
E Grade V
1
I
O
= 0 mA 4.498 4.5 4.502 V
OUT
F Grade 4.495 4.505 V
G Grade 4.490 4.510 V
LINE REGULATION
E Grade ⌬VO/⌬V
2
IN
4.75 V ≤ VS ≤ 15 V, I
= 0 mA 2 4 ppm/V
OUT
F and G Grades 48ppm/V
LOAD REGULATION
E Grade ⌬VO/⌬V
2
LOADVS
= 5.8 V, 0 mA ≤ I
≤ 30 mA 2 4 ppm/mA
OUT
F and G Grades 48ppm/mA
DROPOUT VOLTAGE V
LONG-TERM STABILITY
3
NOISE VOLTAGE e
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1,000 hours life test performed on three independent wafer lots at 12 5°C, with an LTPD of 1.3.
Specifications subject to change without notice.
S
DV
N
– V
O
O
VS = 5.00 V, I
VS = 5.8 V, I
= 10 mA 0.50 V
LOAD
= 30 mA 1.30 V
LOAD
1,000 Hours @ 125°C2mV
0.1 Hz to 10 Hz 45 µV p-p
ELECTRICAL CHARACTERISTICS
(@ VS = 5.0 V, TA = –40ⴗC ≤ TA ≤ +85ⴗC, unless otherwise noted.)
Parameter Symbol Condition Min Typ Max Unit
TEMPERATURE COEFFICIENT
E Grade TCVO/°CI
F Grade 510ppm/°C
G Grade
LINE REGULATION
3
4
E Grade ⌬VO/⌬V
1, 2
= 0 mA 2 5 ppm/°C
OUT
10 25 ppm/°C
IN
4.75 V ≤ VS ≤ 15 V, I
= 0 mA 5 10 ppm/V
OUT
F and G Grades 10 20 ppm/V
LOAD REGULATION
E Grade ⌬VO/⌬V
4
LOADVS
= 5.80 V, 0 mA ≤ I
≤ 25 mA 5 15 ppm/mA
OUT
F and G Grades 10 20 ppm/mA
DROPOUT VOLTAGE V
– V
S
O
VS = 5.00 V, I
VS = 5.80 V, I
= 10 mA 0.5 V
LOAD
= 25 mA 1.30 V
LOAD
SLEEP PIN
Logic High Input Voltage V
Logic High Input Current I
Logic Low Input Voltage V
Logic Low Input Current I
H
H
L
L
2.4 V
–8 µA
0.8 V
–8 µA
SUPPLY CURRENT No Load 45 µA
Sleep Mode No Load 15 µA
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm /°C.
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
TCVO=(V
MAX–VMIN
)/ VO(T
MAX–TMIN
).
REV. G
–7–
REF19x Series
REF194–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ VS = 5.0 V, –40ⴗC ≤ TA ≤ +125ⴗC, unless otherwise noted.)
Parameter Symbol Condition Min Typ Max Unit
TEMPERATURE COEFFICIENT
E Grade TCVO/°CI
F Grade 5 ppm/°C
G Grade
LINE REGULATION
3
4
E Grade ⌬VO/⌬V
1, 2
= 0 mA 2 ppm/°C
OUT
10 ppm/°C
IN
4.75 V ≤ VS ≤ 15 V, I
= 0 mA 5 ppm/V
OUT
F and G Grades 10 ppm/V
LOAD REGULATION
E Grade ⌬VO/⌬V
4
LOADVS
= 5.80 V, mA 0 ≤ I
≤ 20 mA 5 ppm/mA
OUT
F and G Grades 10 ppm/mA
DROPOUT VOLTAGE V
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm /°C.
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
TCVO=(V
MAX–VMIN
)/ VO(T
– V
S
O
MAX–TMIN
VS = 5.10 V, I
VS = 5.95 V, I
).
= 10 mA 0.60 V
LOAD
= 20 mA 1.45 V
LOAD
–8–
REV. G
REF195–SPECIFICATIONS
REF19x Series
ELECTRICAL CHARACTERISTICS
(@ VS = 5.10 V, TA = 25ⴗC, unless otherwise noted.)
Parameter Symbol Condition Min Typ Max Unit
INITIAL ACCURACY
E Grade V
1
I
O
= 0 mA 4.998 5.0 5.002 V
OUT
F Grade 4.995 5.005 V
G Grade 4.990 5.010 V
LINE REGULATION
E Grade ⌬VO/⌬V
2
IN
5.10 V ≤ VS ≤ 15 V, I
= 0 mA 2 4 ppm/V
OUT
F and G Grades 48ppm/V
LOAD REGULATION
E Grade ⌬VO/⌬V
2
LOADVS
= 6.30 V, 0 mA ≤ I
≤ 30 mA 2 4 ppm/mA
OUT
F and G Grades 48ppm/mA
DROPOUT VOLTAGE V
LONG-TERM STABILITY
3
NOISE VOLTAGE e
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1,000 hours life test performed on three independent wafer lots at 12 5°C, with an LTPD of 1.3.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
S
DV
N
– V
O
O
VS = 5.50 V, I
VS = 6.30 V, I
= 10 mA 0.50 V
LOAD
= 30 mA 1.30 V
LOAD
1,000 Hours @ 125°C 1.2 mV
0.1 Hz to 10 Hz 50 µV p-p
(@ VS = 5.15 V, TA = –40ⴗC ≤ TA ≤ +85ⴗC, unless otherwise noted.)
Parameter Symbol Condition Min Typ Max Unit
TEMPERATURE COEFFICIENT
E Grade TCVO/°CI
F Grade 510ppm/°C
G Grade
LINE REGULATION
3
4
E Grade ⌬VO/⌬V
1, 2
= 0 mA 2 5 ppm/°C
OUT
10 25 ppm/°C
IN
5.15 V ≤ VS ≤ 15 V, I
= 0 mA 5 10 ppm/V
OUT
F and G Grades 10 20 ppm/V
LOAD REGULATION
E Grade ⌬VO/⌬V
4
LOADVS
= 6.30 V, 0 mA ≤ I
≤ 25 mA 5 10 ppm/mA
OUT
F and G Grades 10 20 ppm/mA
DROPOUT VOLTAGE V
– V
S
O
VS = 5.50 V, I
VS = 6.30 V, I
= 10 mA 0.50 V
LOAD
= 25 mA 1.30 V
LOAD
SLEEP PIN
Logic High Input Voltage V
Logic High Input Current I
Logic Low Input Voltage V
Logic Low Input Current I
H
H
L
L
2.4 V
–8 µA
0.8 V
–8 µA
SUPPLY CURRENT No Load 45 µA
Sleep Mode No Load 15 µA
NOTES
1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2
TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm /°C.
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
TCVO=(V
MAX–VMIN
)/ VO(T
MAX–TMIN
).
REV. G
–9–
Loading...