ANALOG DEVICES OP 275 GPZ Datasheet

Dual Bipolar/JFET, Audio

Operational Amplifier

OP275*

FEATURES
Excellent Sonic Characteristics
Low Noise: 6 nV/÷Hz
Low Distortion: 0.0006%
High Slew Rate: 22 V/␮s
Wide Bandwidth: 9 MHz
Low Supply Current: 5 mA
Low Offset Voltage: 1 mV
Low Offset Current: 2 nA
Unity Gain Stable
SOIC-8 Package

APPLICATIONS
High Performance Audio
Active Filters
Fast Amplifiers
Integrators

GENERAL DESCRIPTION

The OP275 is the first amplifier to feature the Butler Amplifier
front-end. This new front-end design combines both bipolar
and JFET transistors to attain amplifiers with the accuracy and
low noise performance of bipolar transistors, and the speed and
sound quality of JFETs. Total Harmonic Distortion plus Noise
equals that of previous audio amplifiers, but at much lower
supply currents.

A very low l/f corner of below 6 Hz maintains a flat noise density
response. Whether noise is measured at either 30 Hz or 1 kHz,
it is only 6 nV/÷Hz. The JFET portion of the input stage gives
the OP275 its high slew rates to keep distortion low, even when
large output swings are required, and the 22 V/ms slew rate of the
OP275 is the fastest of any standard audio amplifier. Best of all,
this low noise and high speed are accomplished using less than
5 mA of supply current, lower than any standard audio amplifier.

PIN CONNECTIONS

8-Lead Narrow-Body SOIC

(S Suffix)

OUT A

–IN A

+IN A

1

2

OP275

3

4

V–

8

7

6

5

V+

OUT B

–IN B

+IN B

8-Lead Epoxy DIP

(P Suffix)

OP275

1

2

–IN A

3

+IN A

4

V–

8

7

6

5

V+OUT A

OUT B

–IN B

+IN B

Improved dc performance is also provided with bias and offset
currents greatly reduced over purely bipolar designs. Input
offset voltage is guaranteed at 1 mV and is typically less than
200 mV. This allows the OP275 to be used in many dc coupled
or summing applications without the need for special selections
or the added noise of additional offset adjustment circuitry.

The output is capable of driving 600 W loads to 10 V rms while
maintaining low distortion. THD + Noise at 3 V rms is a low

0.0006%.
The OP275 is specified over the extended industrial (–40∞C to

+85∞C) temperature range. OP275s are available in both plastic
DIP and SOIC-8 packages. SOIC-8 packages are available in
2500 piece reels. Many audio amplifiers are not offered in SOIC-8
surface mount packages for a variety of reasons; however, the
OP275 was designed so that it would offer full performance in
surface-mount packaging.

*

Protected by U.S. Patent No. 5,101,126.

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © 2003 Analog Devices, Inc. All rights reserved.

OP275

SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

(@ VS = ⴞ15.0 V, TA = 25ⴗC, unless otherwise noted.)

Parameter Symbol Conditions Min Typ Max Unit

AUDIO PERFORMANCE

THD + Noise V

Voltage Noise Density e

n

= 3 V rms,

IN

R

= 2 kW, f = 1 kHz 0.006 %

L

f = 30 Hz 7 nV/÷Hz
f = 1 kHz 6 nV/÷Hz

Current Noise Density i

n

f = 1 kHz 1.5 pA/÷Hz

Headroom THD + Noise £ 0.01%,

= 2 kW, VS = ±18 V >12.9 dBu

R

L

INPUT CHARACTERISTICS

Offset Voltage V

Input Bias Current I

Input Offset Current I

Input Voltage Range V

OS

B

OS

CM

Common-Mode Rejection Ratio CMRR V

Large Signal Voltage Gain A

Offset Voltage Drift ⌬V

VO

/⌬T2mV/∞C

OS

–40∞C £ T

£ +85∞C 1.25 mV

A

VCM = 0 V 100 350 nA

= 0 V, –40∞C £ TA £ +85∞C 100 400 nA

V

CM

VCM = 0 V 2 50 nA
V

= 0 V, –40∞C £ TA £ +85∞C2100 nA

CM

–10.5 +10.5 V

= ±10.5 V,

CM

–40∞C £ T

£ +85∞C80106 dB

A

RL = 2 kW 250 V/mV

= 2 kW, –40∞C £ TA £ +85∞C 175 V/mV

R

L

R

= 600 W 200 V/mV

L

1mV

OUTPUT CHARACTERISTICS

Output Voltage Swing V

O

RL = 2 kW –13.5 ±13.9 +13.5 V
R

= 2 kW, –40∞C £ TA £ +85∞C –13 ±13.9 +13 V

L

= 600 W, VS = ±18 V +14, –16 V

R

L

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

Supply Current I

Supply Voltage Range V

SY

S

= ±4.5 V to ±18 V 85 111 dB

S

V

= ±4.5 V to ±18 V,

S

–40∞C £ T

£ +85∞C80 dB

A

VS = ±4.5 V to ±18 V, VO = 0 V,
R

= •, –40∞C £ TA £ +85∞C 45mA

L

= ±22 V, VO = 0 V, RL = •,

V

S

–40∞C £ T

£ +85∞C 5.5 mA

A

±4.5 ±22 V

DYNAMIC PERFORMANCE

Slew Rate SR R
Full-Power Bandwidth BW

P

= 2 kW 15 22 V/ms

L

kHz
Gain Bandwidth Product GBP 9 MHz
Phase Margin Ø

m

Overshoot Factor V

= 100 mV, AV = +1,

IN

62 Degrees

RL = 600 W, CL = 100 pF 10 %

Specifications subject to change without notice.

REV. B–2–

OP275

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±22 V

Input Voltage
Differential Input Voltage

2

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 22 V

2

. . . . . . . . . . . . . . . . . . . . . . . ± 7.5 V

Output Short-Circuit Duration to GND
Storage Temperature Range

1

3

. . . . . . . . . Indefinite

ORDERING GUIDE

Model Temperature Range Package Option

OP275GP –40∞C to +85∞C 8-Lead Plastic DIP
OP275GS –40∞C to +85∞C 8-Lead SOIC
OP275GSR –40∞C to +85∞C SOIC-8 Reel, 2500 pcs.

P, S Package . . . . . . . . . . . . . . . . . . . . . . . .–65∞C to +150∞C

Operating Temperature Range

OP275G . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40∞C to +85∞C

Junction Temperature Range

P, S Package . . . . . . . . . . . . . . . . . . . . . . . .–65∞C to +150∞C

Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300∞C

Package Type ␪

4

JA

␪

JC

Unit

8-Lead Plastic DIP (P) 103 43 ∞C/W
8-Lead SOIC (S) 158 43 ∞C/W

NOTES

1

Absolute maximum ratings apply to packaged parts, unless otherwise noted.

2

For supply voltages greater than ± 22 V, the absolute maximum input voltage is
equal to the supply voltage.

3

Shorts to either supply may destroy the device. See data sheet for full details.

4

␪JA is specified for the worst-case conditions, i.e., ␪JA is specified for device in

socket for cerdip, P-DIP, and LCC packages; ␪JA is specified for device sol­dered in circuit board for SOIC package.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
OP275 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.

REV. B

–3–

OP275–Typical Performance Characteristics

25

TA = 25ⴗC

20

R

= 2k⍀

L

15

10

5

0

–5

–10

–15

OUTPUT VOLTAGE SWING – V

–20

–25

0 ⴞ5 ⴞ25

ⴞ10 ⴞ15 ⴞ20

SUPPLY VOLTAGE – V

+VOM

–VOM

TPC 1. Output Voltage Swing
vs. Supply Voltage

MARKER 15 309.059Hz
MAG (A/H) 60.115dB

60

50

40

30

20

MARKER 15 309.058Hz
PHASE (A/R) 90.606Deg

10

GAIN – dB

0

–10

–20

10k 100k

VS = ⴞ15V

T

= 25ⴗC

A

1M 10M

FREQUENCY – Hz

TPC 4. Open-Loop Gain,
Phase vs. Frequency

135

90

45

0

–45

PHASE – Degrees

–90

1500

VS = ⴞ15V

= ⴞ15V

V

O

1250

1000

750

+GAIN

= 600

⍀

R

L

500

OPEN-LOOP GAIN – V/mV

250

0

–50 –25 100

0255075

TEMPERATURE – ⴗC

–GAIN

= 600

R

L

+GAIN
R

L

–GAIN

= 2k

R

L

⍀

= 2k

⍀

⍀

TPC 2. Open-Loop Gain vs.
Temperature

50

40

A

= +100

VCL

30

20

A

= +10

VCL

10

0

A

= +1

VCL

–10

CLOSED-LOOP GAIN – dB

–20

–30

1k 10k 100M

100k 1M 10M

FREQUENCY – Hz

VS = ⴞ15V

= 25ⴗC

T

A

TPC 5. Closed-Loop Gain vs.
Frequency

40

30

20

10

0

–10

GAIN – dB

–20

–30

–40

10k 100k

FREQUENCY – Hz

VS = ⴞ15V

= 25ⴗC

T

A

1M 10M

TPC 3. Closed-Loop Gain
and Phase, A

60

VS = ⴞ15V

50

= 25ⴗC

T

A

40

⍀

30

20

IMPEDANCE –

10

0
100 1k 10M

= +1

V

A

A

= +10

VCL

A

= +100

VCL

10k 100k 1M

FREQUENCY – Hz

VCL

TPC 6. Closed-Loop Output
Impedance vs. Frequency

= +1

180

135

90

45

0

–45

PHASE – Degrees

–90

–135

–180

120

100

80

60

40

20

COMMON-MODE REJECTION – dB

0

100 1k 10M

10k 100k 1M

FREQUENCY – Hz

VS = ⴞ15V
T

= 25ⴗC

A

TPC 7. Common-Mode
Rejection vs. Frequency

120

100

80

VS = ⴞ15V
T

=

25ⴗC

A

60

40

20

POWER SUPPLY REJECTION – dB

0

10 100 1M

1k 10k 100k

FREQUENCY – Hz

+PSRR

–PSRR

TPC 8. Power Supply Rejection
vs. Frequency

100

80

60

40

20

0

–20

OPEN-LOOP GAIN – dB

–40

–60

GAIN

PHASE

1k 10k 100M

VS = ⴞ15V

= 2k

R

L

TA = 25ⴗC

100k 1M 10M

FREQUENCY – Hz

⍀

Øm= 58

TPC 9. Open-Loop Gain,
Phase vs. Frequency

0

45

90

ⴗ

135

180

225

270

PHASE – Degrees

REV. B–4–