Operational Amplifiers
OP193/OP293
NULL
1
–IN A
2
+IN A
3
V–
4
NC
8
V+
7
OUT A
6
NULL
5
NC = NO CONNECT
OP193
TOP VIEW
(Not to Scale)
00295-001
OUT A
1
–IN A
2
+IN A
3
V–
4
V+
8
OUT B
7
–IN B
6
+IN B
5
OP293
TOP VIEW
(Not to S cal e)
00295-002
Data Sheet
FEATURES
Operates from +1.7 V to ±18 V
Low supply current: 15 µA/amplifier
Low offset voltage: 100 µV maximum
Outputs sink and source: ±8 mA
No phase reversal
Single- or dual-supply operation
High open-loop gain: 600 V/mV
Unity-gain stable
APPLICATIONS
Digital scales
Strain gages
Portable medical equipment
Battery-powered instrumentation
Temperature transducer amplifier
GENERAL DESCRIPTION
The OP193/OP293 are single-supply operational amplifiers that
feature a combination of high precision, low supply current, and
the ability to operate at low voltages. For high performance in
single-supply systems, the input and output ranges include
ground, and the outputs swing from the negative rail to within
600 mV of the positive supply. For low voltage operation, the
OP193/OP293 can operate down to +1.7 V or ±0.85 V.
The combination of high accuracy and low power operation
make the OP193/OP293 useful for battery-powered equipment.
The p a r t’s low current drain and low voltage operation allow it
to continue performing long after other amplifiers have ceased
functioning either because of battery drain or headroom.
The OP193/OP293 are specified for single +2 V through dual
±15 V operation over the extended (−40°C to +125°C) temperature
range. They are available in SOIC surface-mount packages.
Precision, Micropower
PIN CONFIGURATIONS
Figure 1. 8-Lead SOIC_N
(S Suffix)
Figure 2. 8-Lead SOIC_N
(S Suffix)
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Rev. D
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OP193/OP293 Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Pin Configurations ........................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Specifications ............................................................... 3
Absolute Maximum Ratings ............................................................ 8
Thermal Resistance ...................................................................... 8
ESD Caution .................................................................................. 8
Typical Performance Characteristics ............................................. 9
Functional Description .................................................................. 13
Driving Capacitive Loads .......................................................... 13
REVISION HISTORY
1/15—Rev. C to Rev. D
Changed Minimum Output Voltage Swing High Parameter
from 4.0 V to 3.9 V; Table 2 ............................................................. 4
Changes to Ordering Guide .......................................................... 18
9/09—Rev. B to Rev. C
Updated Format .................................................................. Universal
Deleted OP493 .................................................................... Universal
Changes to Features and General Description Sections .............. 1
Deleted 8-Lead Epoxy DIP Pin Configurations for OP193 and
OP293, and 14-Lead Epoxy DIP and 16-Lead Wide Body SOL
Pin Configurations for OP493 ........................................................ 1
Changes to Offset Voltage Parameter and Large Signal Voltage
Gain, R
Power Supply Rejection Ratio Parameter, Table 1 ........................ 3
Changes to Offset Voltage Parameter and Power Supply
Rejection Ratio Parameter, Table 2 ................................................ 4
Changes to Offset Voltage Parameter and Power Supply
Rejection Ratio Parameter, Table 3 ................................................ 6
Changes to Offset Voltage Parameter and Power Supply
Rejection Ratio Parameter, Table 4 ................................................ 7
Changes to Table 5 and Table 6 ....................................................... 8
= 100 kΩ, −10 V ≤ V
L
≤ +10 V Parameter, and
OUT
Input Overvoltage Protection ................................................... 14
Output Phase Reversal—OP193 ............................................... 14
Output Phase Reversal—OP293 ............................................... 14
Battery-Powered Applications .................................................. 14
A Micropower False-Ground Generator ................................. 15
A Battery-Powered Voltage Reference ..................................... 15
A Single-Supply Current Monitor ............................................ 15
A Single-Supply Instrumentation Amplifier .......................... 16
A Low Power, Temperature to 4 mA to 20 mA Transmitter ... 16
A Micropower Voltage Controlled Oscillator ........................ 17
Outline Dimensions ....................................................................... 18
Ordering Guide .......................................................................... 18
Changes to Figure 3 to Figure 6 ....................................................... 9
Changes to Figure 10 and Figure 12............................................. 10
Changes to Functional Description Section and Figure 26 ...... 13
Deleted A Micropower, Single-Supply Quad Voltage Output
8-Bit DAC Section .......................................................................... 13
Deleted Figure 13; Renumbered Sequentially ............................ 14
Deleted A Single-Supply Micropower Quad Programmable-
Gain Amplifier Section .................................................................. 14
Changes to Output Phase Reversal—OP293 Section, Battery-
Powered Applications Section, and Figure 27 ............................ 14
Deleted Figure 14 ............................................................................ 15
Changes to Figure 31, A Single-Supply Current Monitor
Section, and Figure 32 .................................................................... 15
Changes to A Low Power, Temperature to 4 mA to 20 mA
Transmitter Section and Figure 35 ............................................... 16
Updated Outline Dimensions ....................................................... 18
Changes to Ordering Guide .......................................................... 18
1/02—Rev. A to Rev. B
Deletion of Wafer Test Limits Table ................................................ 5
Deletion of Dice Characteristics Images ........................................ 6
Edits to Ordering Guide ................................................................... 6
Rev. D | Page 2 of 20
Data Sheet OP193/OP293
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
Unit
Input Voltage Range
VCM −14.9
+13.5
−14.9
+13.5
V
−40°C ≤ TA ≤ +125°C
150
150 V/mV
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
VS = ±15.0 V, TA = 25°C, unless otherwise noted.
Table 1.
E Grade F Grade
INPUT CHARACTERISTICS
Offset Voltage VOS OP193 150 μV
OP193, −40°C ≤ TA ≤ +125°C 250 μV
OP293 100 250 μV
OP293, −40°C ≤ TA ≤ +125°C 200 350 μV
Input Bias Current IB VCM = 0 V, −40°C ≤ TA ≤ +125°C 15 20 nA
Input Offset Current IOS VCM = 0 V, −40°C ≤ TA ≤ +125°C 2 4 nA
Common-Mode Rejection CMRR −14.9 V ≤ VCM ≤ +14 V 100 116 97 116 dB
−14.9 V ≤ VCM ≤ +14 V,
−40°C ≤ T
≤ +125°C
A
Large Signal Voltage Gain AVO RL = 100 kΩ,
−10 V ≤ V
≤ +10 V 500 600 500 600 V/mV
OUT
−40°C ≤ TA ≤ +85°C 300 300 V/mV
−40°C ≤ TA ≤ +125°C 300 300 V/mV
Large Signal Voltage Gain AVO RL = 10 kΩ,
−10 V ≤ V
≤ +10 V 350 350 V/mV
OUT
−40°C ≤ TA ≤ +85°C 200 200 V/mV
97 94 dB
Large Signal Voltage Gain AVO RL = 2 kΩ,
−10 V ≤ V
≤ +10 V 200 200 V/mV
OUT
−40°C ≤ TA ≤ +85°C 125 125 V/mV
−40°C ≤ TA ≤ +125°C 100 100 V/mV
Long-Term Offset Voltage1 VOS 150 300 μV
Offset Voltage Drift2 ΔVOS/ΔT 0.2 1.75 μV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High VOH IL = 1 mA 14.1 14.2 14.1 14.2 V
IL = 1 mA, −40°C ≤ TA ≤ +125°C 14.0 14.0 V
IL = 5 mA 13.9 14.1 13.9 14.1 V
Output Voltage Swing Low VOL IL = −1 mA −14.7 −14.6 −14.7 −14.6 V
IL = −1 mA,
−40°C ≤ T
A
≤ +125°C
−14.4 −14.4 V
IL = −5 mA +14.2 −14.1 +14.2 −14.1 V
Short-Circuit Current ISC ±25 ±25 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = ±1.5 V to ±18 V 100 120 97 120 dB
−40°C ≤ TA ≤ +125°C 97 94 dB
Supply Current per Amplifier ISY V
= 0 V, VS = ±18 V,
OUT
−40°C ≤ T
≤ +125°C, RL = ∞
A
30 30 μA
NOISE PERFORMANCE
Voltage Noise Density en f = 1 kHz 65 65 nV/√Hz
Current Noise Density in f = 1 kHz 0.05 0.05 pA/√Hz
Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 μV p-p
Rev. D | Page 3 of 20
OP193/OP293 Data Sheet
Input Offset Current
IOS
−40°C ≤ TA ≤ +125°C
2
4
nA
−40°C ≤ TA ≤ +85°C
50
50
V/mV
IL = −1 mA, −40°C ≤ TA ≤ +125°C
500
500
mV
E Grade F Grade
Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ 15 15 V/ms
Gain Bandwidth Product GBP 35 35 kHz
Channel Separation V
1
Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 °C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the −40°C to +25°C delta and the +25°C to +125°C delta.
= 5.0 V, VCM = 0.1 V, TA = 25°C, unless otherwise noted.
V
S
Table 2.
E Grade F Grade
Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS OP193 150 μV
OP193, −40°C ≤ TA ≤ +125°C 250 μV
OP293 100 250 μV
OP293, −40°C ≤ TA ≤ +125°C 200 350 μV
Input Bias Current IB −40°C ≤ TA ≤ +125°C 15 20 nA
= 10 V p-p, RL = 2 kΩ,
OUT
f = 1 kHz
120 120 dB
Input Voltage Range VCM 0 4 0 4 V
Common-Mode Rejection CMRR 0.1 V ≤ VCM ≤ 4 V 100 116 96 116 dB
0.1 V ≤ VCM ≤ 4 V,
−40°C ≤ T
≤ +125°C
A
92 92 dB
Large Signal Voltage Gain AVO RL = 100 kΩ,
0.03 V ≤ V
≤ 4.0 V 200 200 V/mV
OUT
−40°C ≤ TA ≤ +85°C 125 125 V/mV
−40°C ≤ TA ≤ +125°C 130 130 V/mV
Large Signal Voltage Gain AVO RL = 10 kΩ,
0.03 V ≤ V
≤ 4.0 V 75 75 V/mV
OUT
−40°C ≤ TA ≤ +125°C 70 70 V/mV
Long-Term Offset Voltage1 VOS 150 300 μV
Offset Voltage Drift2 ΔVOS/ΔT 0.2 1.25 μV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High VOH IL = 100 μA 4.4 4.4 V
IL = 1 mA 4.1 4.4 4.1 4.4 V
IL = 1 mA,
−40°C ≤ TA ≤ +125°C 4.0 4.0 V
IL = 5 mA 3.9 4.4 3.9 4.4 V
Output Voltage Swing Low VOL IL = −100 μA 140 160 140 160 mV
IL = −100 μA,
−40°C ≤ TA ≤ +125°C 220 220 mV
No load 5 5 mV
IL = −1 mA 280 400 280 400 mV
IL = –5 mA 700 900 700 900 mV
Short-Circuit Current ISC ±8 ±8 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = ±1.7 V to ±6.0 V 100 120 97 120 dB
−40°C ≤ TA ≤ +125°C 94 90 dB
Supply Current per Amplifier ISY VCM = 2.5 V, RL = ∞ 14.5 14.5 μA
Rev. D | Page 4 of 20
Data Sheet OP193/OP293
E Grade F Grade
Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
NOISE PERFORMANCE
Voltage Noise Density en f = 1 kHz 65 65 nV/√Hz
Current Noise Density in f = 1 kHz 0.05 0.05 pA/√Hz
Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 μV p-p
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ 12 12 V/ms
Gain Bandwidth Product GBP 35 35 kHz
1
Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 °C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the −40°C to +25°C delta and the +25°C to +125°C delta.
Rev. D | Page 5 of 20
OP193/OP293 Data Sheet
Offset Voltage
VOS
OP193
150
μV
Output Voltage Swing Low
VOL
IL = −1 mA
280
400 280
400
mV
Supply Voltage Range
VS +2 ±18
+2 ±18
V
VS = 3.0 V, VCM = 0.1 V, TA = 25°C, unless otherwise noted.
Table 3.
E Grade F Grade
Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
INPUT CHARACTERISTICS
OP193, −40°C ≤ TA ≤ +125°C 250 μV
OP293 100 250 μV
OP293, −40°C ≤ TA ≤ +125°C 200 350 μV
Input Bias Current IB −40°C ≤ TA ≤ +125°C 15 20 nA
Input Offset Current IOS −40°C ≤ TA ≤ +125°C 2 4 nA
Input Voltage Range VCM 0 2 0 2 V
Common-Mode Rejection CMRR 0.1 ≤ VCM ≤ 2 V 97 116 94 116 dB
0.1 ≤ VCM ≤ 2 V,
Large Signal Voltage Gain AVO RL = 100 kΩ,
0.03 V ≤ V
−40°C ≤ TA ≤ +85°C 75 75 V/mV
−40°C ≤ TA ≤ +125°C 100 100 V/mV
Long-Term Offset Voltage1 VOS 150 300 μV
Offset Voltage Drift2 ΔVOS/ΔT 0.2 1.25 μV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High VOH IL = 1 mA 2.1 2.14 2.1 2.14 V
IL = 1 mA, –40°C ≤ TA ≤ +125°C 1.9 1.9 V
IL = 5 mA 1.9 2.1 1.9 2.1 V
90 87 dB
−40°C ≤ T
≤ +125°C
A
≤ 2 V 100 100 V/mV
OUT
IL = −1 mA, −40°C ≤ TA ≤ +125°C 500 500 mV
IL = −5 mA 700 900 700 900 mV
Short-Circuit Current ISC ±8 ±8 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = +1.7 V to +6 V 100 97 dB
−40°C ≤ TA ≤ +125°C 94 90 dB
Supply Current per Amplifier ISY VCM = 1.5 V, RL = ∞ 14.5 22 14.5 22 μA
−40°C ≤ TA ≤ +125°C 22 22 μA
NOISE PERFORMANCE
Voltage Noise Density en f = 1 kHz 65 65 nV/√Hz
Current Noise Density in f = 1 kHz 0.05 0.05 pA/√Hz
Voltage Noise
DYNAMIC PERFORMANCE
p-p
e
n
0.1 Hz to 10 Hz 3 3 μV p-p
Slew Rate SR RL = 2 kΩ 10 10 V/ms
Gain Bandwidth Product GBP 25 25 kHz
Channel Separation V
= 10 V p-p, RL = 2 kΩ,
OUT
120 120 dB
f = 1 kHz
1
Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 °C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.
Rev. D | Page 6 of 20
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