ANALOG DEVICES OP191 Service Manual

Micropower Single-Supply
+
O

FEATURES

Single-supply operation: 2.7 V to 12 V Wide input voltage range Rail-to-rail output swing Low supply current: 300 μA/amp Wide bandwidth: 3 MHz Slew rate: 0.5 V/μs Low offset voltage: 700 μV No phase reversal

APPLICATIONS

Industrial process control Battery-powered instrumentation Power supply control and protection Telecommunications Remote sensors Low voltage strain gage amplifiers DAC output amplifiers
Rail-to-Rail Input/Output Op Amps
OP191/OP291/OP491

PIN CONFIGURATIONS

OUTA
–INA
+INA
1
2
OP291
3
4
–V
NC
1
INA
2
INA
OP191
3
–V
4
NC = NO CONNECT
8
7
6
5
NC
+V
OUTA
NC
00294-001
Figure 1. 8-Lead Narrow-Body SOIC Figure 2. 8-Lead Narrow-Body SOIC
OUTA
–INA
+INA
+INB
–INB
OUTB
1
2
3
+V
4
OP491
5
6
7
14
OUTD
–IND
13
+IND
12
–V
11
+INC
10
–INC
9
8
OUTC
00294-003
OUTA
–INA
+INA
+INB
–INB
UTB
1
2
+-+
3
+V
4
OP491
5
+-+
6
7
Figure 3. 14-Lead Narrow-Body SOIC Figure 4. 14-Lead PDIP
OUTA
–INA
+INA
+V
+INB
–INB
OUTB
1
2
3
4
5
6
7
OP491
14
OUTD
13
–IND
12
+IND
11
–V
+INC
10
9
–INC
8
OUTC
00294-005
Figure 5. 14-Lead TSSOP
+V
8
OUTB
7
–INB
6
5
+INB
0294-002
14
OUTD
13
–IND
-
+IND
12
–V
11
+INC
10
-
–INC
9
8
OUTC
00294-004

GENERAL DESCRIPTION

The OP191, OP291, and OP491 are single, dual, and quad micropower, single-supply, 3 MHz bandwidth amplifiers featuring rail-to-rail inputs and outputs. All are guaranteed to operate from a +3 V single supply as well as ±5 V dual supplies.
Fabricated on Analog Devices CBCMOS process, the OPx91 family has a unique input stage that allows the input voltage to safely extend 10 V beyond either supply without any phase inversion or latch-up. The output voltage swings to within millivolts of the supplies and continues to sink or source current all the way to the supplies.
Applications for these amplifiers include portable tele­communications equipment, power supply control and protection, and interface for transducers with wide output ranges. Sensors requiring a rail-to-rail input amplifier include Hall effect, piezo electric, and resistive transducers.
Rev. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
The ability to swing rail-to-rail at both the input and output enables designers to build multistage filters in single-supply systems and to maintain high signal-to-noise ratios.
The OP191/OP291/OP491 are specified over the extended industrial –40°C to +125°C temperature range. The OP191 single and OP291 dual amplifiers are available in 8-lead plastic SOIC surface-mount packages. The OP491 quad is available in a 14-lead PDIP, a narrow 14-lead SOIC package, and a 14-lead TSSOP.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©1994–2010 Analog Devices, Inc. All rights reserved.
OP191/OP291/OP491

TABLE OF CONTENTS

Features .............................................................................................. 1
Overdrive Recovery ................................................................... 18
Applications ....................................................................................... 1
Pin Configurations ........................................................................... 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Specifications ............................................................... 3
Absolute Maximum Ratings ............................................................ 7
Thermal Resistance ...................................................................... 7
ESD Caution .................................................................................. 7
Typical Performance Characteristics ............................................. 8
Theory of Operation ...................................................................... 17
Input Overvoltage Protection ................................................... 18
Output Voltage Phase Reversal ................................................. 18

REVISION HISTORY

4/10—Rev. D to Rev. E
Changes to Input Voltage Parameter, Table 4 ............................... 7
Applications Information .............................................................. 19
Single 3 V Supply, Instrumentation Amplifier ....................... 19
Single-Supply RTD Amplifier ................................................... 19
A 2.5 V Reference from a 3 V Supply ...................................... 20
5 V Only, 12-Bit DAC Swings Rail-to-Rail ............................. 20
A High-Side Current Monitor .................................................. 20
A 3 V, Cold Junction Compensated Thermocouple Amplifier
....................................................................................................... 21
Single-Supply, Direct Access Arrangement for Modems ...... 21
3 V, 50 Hz/60 Hz Active Notch Filter with False Ground ..... 22
Single-Supply, Half-Wave, and Full-Wave Rectifiers ............. 22
Outline Dimensions ....................................................................... 23
Ordering Guide .......................................................................... 24
3/04—Rev. B to Rev. C.
Changes to OP291 SOIC Pin Configuration ................................. 1
4/06—Rev. C to Rev. D
Changes to Noise Performance, Voltage Density, Table 1 ........... 3
Changes to Noise Performance, Voltage Density, Table 2 ........... 4
Changes to Noise Performance, Voltage Density, Table 3 ........... 5
Changes to Figure 23 and Figure 24 ............................................. 10
Changes to Figure 42 ...................................................................... 13
Changes to Figure 43 ...................................................................... 14
Changes to Figure 57 ...................................................................... 16
Added Figure 58 .............................................................................. 16
Changed Reference from Figure 47 to Figure 12 ........................ 17
Updated Outline Dimensions ....................................................... 23
Changes to Ordering Guide .......................................................... 24
11/03—Rev. A to Rev. B.
Edits to General Description ........................................................... 1
Edits to Pin Configuration ............................................................... 1
Changes to Ordering Guide ............................................................. 5
Updated Outline Dimensions ....................................................... 19
12/02—Rev. 0 to Rev. A.
Edits to General Description ........................................................... 1
Edits to Pin Configuration ............................................................... 1
Changes to Ordering Guide ............................................................. 5
Edits to Dice Characteristics ............................................................ 5
Rev. E | Page 2 of 24
OP191/OP291/OP491

SPECIFICATIONS

ELECTRICAL SPECIFICATIONS

@ VS = 3.0 V, VCM = 0.1 V, VO = 1.4 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage
OP191G VOS 80 500 μV
−40°C TA ≤ +125°C 1 mV OP291G/OP491G VOS 80 700 μV
−40°C TA ≤ +125°C 1.25 mV
Input Bias Current IB 30 65 nA
−40°C TA ≤ +125°C 95 nA
Input Offset Current IOS 0.1 11 nA
−40°C TA ≤ +125°C 22 nA
Input Voltage Range 0 3 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.9 V 70 90 dB
−40°C TA ≤ +125°C 65 87 dB
Large Signal Voltage Gain AVO RL = 10 kΩ, VO = 0.3 V to 2.7 V 25 70 V/mV
−40°C TA ≤ +125°C 50 V/mV
Offset Voltage Drift ∆VOS/∆T 1.1 μV/°C Bias Current Drift ∆IB/∆T 100 pA/°C Offset Current Drift ∆IOS/∆T 20 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH RL = 100 kΩ to GND 2.95 2.99 V
−40°C to +125°C 2.90 2.98 V
R
−40°C to +125°C 2.70 2.80 V
Output Voltage Low VOL RL = 100 kΩ to V+ 4.5 10 mV
−40°C to +125°C 35 mV
R
−40°C to +125°C 130 mV
Short-Circuit Limit ISC Sink/source ±8.75 ±13.50 mA
−40°C to +125°C ±6.0 ±10.5 mA
Open-Loop Impedance Z
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V 80 110 dB
−40°C TA ≤ +125°C 75 110 dB
Supply Current/Amplifier ISY VO = 0 V 200 350 μA
−40°C TA ≤ +125°C 330 480 μA
DYNAMIC PERFORMANCE
Slew Rate +SR RL = 10 kΩ 0.4 V/μs Slew Rate –SR RL = 10 kΩ 0.4 V/μs Full-Power Bandwidth BWP 1% distortion 1.2 kHz Settling Time tS To 0.01% 22 μs Gain Bandwidth Product GBP 3 MHz Phase Margin θO 45 Degrees Channel Separation CS f = 1 kHz, RL = 10 kΩ 145 dB
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 2 μV p-p Voltage Noise Density en f = 1 kHz 30 nV/√Hz Current Noise Density in 0.8 pA/√Hz
f = 1 MHz, AV = 1 200 Ω
OUT
= 2 kΩ to GND 2.8 2.9 V
L
= 2 kΩ to V+ 40 75 mV
L
Rev. E | Page 3 of 24
OP191/OP291/OP491
@ VS = 5.0 V, VCM = 0.1 V, VO = 1.4 V, TA = 25°C, unless otherwise noted. +5 V specifications are guaranteed by +3 V and ±5 V testing.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage
OP191 VOS 80 500 μV
−40°C TA ≤ +125°C 1.0 mV OP291/OP491 VOS 80 700 μV
−40°C TA ≤ +125°C 1.25 mV
Input Bias Current IB 30 65 nA
−40°C TA ≤ +125°C 95 nA
Input Offset Current IOS 0.1 11 nA
−40°C TA ≤ +125°C 22 nA
Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 4.9 V 70 93 dB –40°C TA ≤ +125°C 65 90 dB Large Signal Voltage Gain AVO RL = 10 kΩ, VO = 0.3 V to 4.7 V 25 70 V/mV
−40°C TA ≤ +125°C 50 V/mV
Offset Voltage Drift ∆VOS/∆T −40°C ≤ TA ≤ +125°C 1.1 μV/°C Bias Current Drift ∆IB/∆T 100 pA/°C Offset Current Drift ∆IOS/∆T 20 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH RL = 100 kΩ to GND 4.95 4.99 V
−40°C to +125°C 4.90 4.98 V
R
−40°C to +125°C 4.65 4.75 V
Output Voltage Low VOL RL = 100 kΩ to V+ 4.5 10 mV
−40°C to +125°C 35 mV
R
−40°C to +125°C 155 mV
Short-Circuit Limit ISC Sink/source ±8.75 ±13.5 mA
−40°C to +125°C ±6.0 ±10.5 mA
Open-Loop Impedance Z
f = 1 MHz, AV = 1 200 Ω
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V 80 110 dB
−40°C TA ≤ +125°C 75 110 dB
Supply Current/Amplifier ISY VO = 0 V 220 400 μA
−40°C TA ≤ +125°C 350 500 μA
DYNAMIC PERFORMANCE
Slew Rate +SR RL = 10 kΩ 0.4 V/μs Slew Rate –SR RL = 10 kΩ 0.4 V/μs Full-Power Bandwidth BWP 1% distortion 1.2 kHz Settling Time tS To 0.01% 22 μs Gain Bandwidth Product GBP 3 MHz Phase Margin θO 45 Degrees Channel Separation CS f = 1 kHz, RL = 10 kΩ 145 dB
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 2 μV p-p Voltage Noise Density en f = 1 kHz 42 nV/√Hz Current Noise Density in 0.8 pA/√Hz
= 2 kΩ to GND 4.8 4.85 V
L
= 2 kΩ to V+ 40 75 mV
L
Rev. E | Page 4 of 24
OP191/OP291/OP491
@ VO = ±5.0 V, –4.9 V ≤ VCM ≤ +4.9 V, TA = +25°C, unless otherwise noted.
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage OP191 VOS 80 500 μV
−40°C TA ≤ +125°C 1 mV OP291/OP491 VOS 80 700 μV
−40°C TA ≤ +125°C 1.25 mV Input Bias Current IB 30 65 nA
−40°C TA ≤ +125°C 95 nA
Input Offset Current IOS 0.1 11 nA
−40°C TA ≤ +125°C 22 nA Input Voltage Range −5 +5 V Common-Mode Rejection Ratio CMRR VCM = ±5 V 75 100 dB
−40°C TA ≤ +125°C 67 97 dB Large Signal Voltage Gain AVO RL = +10 kΩ, VO = ±4.7 V 25 70
−40°C TA ≤ +125°C 50 V/mV Offset Voltage Drift ∆VOS/∆T 1.1 μV/°C Bias Current Drift ∆IB/∆T 100 pA/°C Offset Current Drift ∆IOS/∆T 20 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing VO RL = 100 kΩ to GND ±4.93 ±4.99 V
−40°C to +125°C ±4.90 ±4.98 V R –40°C TA ≤ +125°C ±4.65 ±4.75 V Short-Circuit Limit ISC Sink/source ±8.75 ±16.00 mA
−40°C to +125°C ±6 ±13 mA Open-Loop Impedance Z
f = 1 MHz, AV = 1 200 Ω
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = ±5 V 80 110 dB
−40°C TA ≤ +125°C 75 100 dB Supply Current/Amplifier ISY VO = 0 V 260 420 μA
−40°C TA ≤ +125°C 390 550 μA
DYNAMIC PERFORMANCE
Slew Rate ±SR RL = 10 kΩ 0.5 V/μs Full-Power Bandwidth BWP 1% distortion 1.2 kHz Settling Time tS To 0.01% 22 μs Gain Bandwidth Product GBP 3 MHz Phase Margin θO 45 Degrees Channel Separation CS f = 1 kHz 145 dB
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 2 μV p-p Voltage Noise Density en f = 1 kHz 42 nV/√Hz Current Noise Density in 0.8 pA/√Hz
= 2 kΩ to GND ±4.80 ±4.95 V
L
Rev. E | Page 5 of 24
OP191/OP291/OP491
INPUT
OUTPUT
5V
100
90
10
0%
5V
V
R A V
=±5V
s
=2k
L
V
IN
200s
=+1 =20Vp-p
00294-006
Figure 6. Input and Output with Inputs Overdriven by 5 V
Rev. E | Page 6 of 24
OP191/OP291/OP491

ABSOLUTE MAXIMUM RATINGS

Table 4.
Parameter Rating
Supply Voltage 16 V Input Voltage GND to (VS + 10 V) Differential Input Voltage 7 V Output Short-Circuit Duration to GND Indefinite Storage Temperature Range
N, R, RU Packages −65°C to +150°C
Operating Temperature Range
OP191G/OP291G/OP491G −40°C to +125°C
Junction Temperature Range
N, R, RU Packages −65°C to +150°C
Lead Temperature (Soldering, 60 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions; that is, θJA is specified for device in socket for PDIP packages; θ for device soldered in circuit board for TSSOP and SOIC packages.
Table 5. Thermal Resistance
Package Type θJA θJC Unit
8-Lead SOIC (R) 158 43 °C/W 14-Lead PDIP (N) 76 33 °C/W 14-Lead SOIC (R) 120 36 °C/W 14-Lead TSSOP (RU) 180 35 °C/W
is specified
JA

ESD CAUTION

Rev. E | Page 7 of 24
OP191/OP291/OP491

TYPICAL PERFORMANCE CHARACTERISTICS

180
VS = 3V T
= 25°C
A
160
BASED ON 1200 OP AMPS
140
120
100
UNITS
80
60
40
20
= 0V
0.22
12525–40
00294-012
00294-013
7
00294-014
0 –0.18
INPUT OFFSET VOLTAGE (mV)
0.140.06–0.02–0.10
Figure 7. OP291 Input Offset Voltage Distribution, VS = 3 V
120
VS = 3V
100
80
60
UNITS
40
20
0
1
0
INPUT OFFSET VOLTAGE (µV/°C)
–40°C < T BASED ON 600 OP AMPS
< +125°C
A
5
6432
Figure 8. OP291 Input Offset Voltage Drift Distribution, VS = 3 V
0
VS = 3V
–0.02
–0.04
–0.06
–0.08
–0.10
INPUT OFFSET VOLTAGE (mV)
–0.12
–0.14
TEMPERATURE ( °C)
= 0.1V
V
CM
V
CM
= 3V
V
CM
VCM = 2.9V
85
Figure 9. Input Offset Voltage vs. Temperature, VS = 3 V
40
30
20
10
0
= 3V
V
S
–10
–20
–30
INPUT BIAS CURRENT (nA)
–40
–50
–60
–40
TEMPERATURE (° C)
VCM = 3V
= 2.9V
V
CM
V
= 0.1V
CM
V
= 0V
CM
00294-015
12525 85
Figure 10. Input Bias Current vs. Temperature, VS = 3 V
0
–0.2
–0.4
VS = 3V
–0.6
–0.8
–1.0
–1.2
–1.4
INPUT OFFSET CURRENT ( nA)
–1.6
–1.8
–40
TEMPERATURE (° C)
= 0.1V
V
CM
= 2.9V
V
CM
= 3V
V
CM
= 0V
V
CM
85
00294-016
12525
Figure 11. Input Offset Current vs. Temperature, VS = 3 V
36
VS = 3V
30
24
18
12
6
0
–6
–12
–18
INPUT BIAS CURRENT (n A)
–24
–30
–36
0.3
0
INPUT COMMON-MODE VOL TAGE (V)
00294-017
3.0
2.72.42.11.81. 51.20.90. 6
Figure 12. Input Bias Current vs. Input Common-Mode Voltage, VS = 3 V
Rev. E | Page 8 of 24
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