Ultralow Offset Voltage
V
V
G
FEATURES
Low VOS: 75 μV maximum
Low V
Ultrastable vs. time: 1.5 μV per month maximum
Low noise: 0.6 μV p-p maximum
Wide input voltage range: ±14 V typical
Wide supply voltage range: 3 V to 18 V
125°C temperature-tested dice
APPLICATIONS
Wireless base station control circuits
Optical network control circuits
Instrumentation
Sensors and controls
Precision filters
GENERAL DESCRIPTION
The OP07 has very low input offset voltage (75 μV maximum for
OP07E) that is obtained by trimming at the wafer stage. These
low offset voltages generally eliminate any need for external
nulling. The OP07 also features low input bias current (±4 nA for
the OP07E) and high open-loop gain (200 V/mV for the OP07E).
The low offset and high open-loop gain make the OP07
particularly useful for high gain instrumentation applications.
drift: 1.3 μV/°C maximum
OS
Thermocouples
Resistor thermal detectors (RTDs)
Strain bridges
Shunt current measurements
Operational Amplifier
OP07
PIN CONFIGURATION
OS
–IN
+IN
V–
OP07
2
3
4
NC = NO CONNECT
1
TRIM
Figure 1.
The wide input voltage range of ±13 V minimum combined
with a high CMRR of 106 dB (OP07E) and high input
impedance provide high accuracy in the noninverting circuit
configuration. Excellent linearity and gain accuracy can be
maintained even at high closed-loop gains. Stability of offsets
and gain with time or variations in temperature is excellent. The
accuracy and stability of the OP07, even at high gain, combined
with the freedom from external nulling have made the OP07 an
industry standard for instrumentation applications.
The OP07 is available in two standard performance grades. The
OP07E is specified for operation over the 0°C to 70°C range,
and the OP07C is specified over the −40°C to +85°C
temperature range.
The OP07 is available in epoxy 8-lead PDIP and 8-lead narrow
SOIC packages. For CERDIP and TO-99 packages and standard
microcircuit drawing (SMD) versions, see the OP77.
8
VOS TRIM
7
V+
6
OUT
5
NC
0316-001
+
7
Q5
NONINVERTI N
INPUT
INVERTING
INPUT
1
R2A AND R2B ARE ELECTRONICALLY ADJUST ED ON CHIP AT F ACTORY FOR MINIMUM I NPUT OFFSET VOLTAGE.
Rev. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
R3
3
2
Q21
Q22
R4
1
R2A
R1A
Q7
Q23
Q24
4
V–
1
Q3 Q6
Q1
(OPTIONAL
NULL)
Q8
R2B
8
R1B
Q4
Q2
Figure 2. Simplified Schematic
1
Q27
Q26
Q25
C1
Q9
Q11
C3
R5
C2
Q13
Q10
Q12
Q17
Q14
Q16
Q15
R7
Q19
R9
OUT
6
R10
Q20
Q18
R8
R6
00316-002
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2006-2009 Analog Devices, Inc. All rights reserved.
OP07
TABLE OF CONTENTS
Features .............................................................................................. 1
Absolute Maximum Ratings ............................................................6
Applications ....................................................................................... 1
General Description ......................................................................... 1
Pin Configuration ............................................................................. 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
OP07E Electrical Characteristics ............................................... 3
OP07C Electrical Characteristics ............................................... 4
REVISION HISTORY
7/09—Rev. D. to Rev E
Changes to Figure 29 Caption ....................................................... 11
Changes to Ordering Guide .......................................................... 14
7/06—Rev. C. to Rev D
Changes to Features .......................................................................... 1
Changes to General Description .................................................... 1
Changes to Specifications Section .................................................. 3
Changes to Table 4 ............................................................................ 6
Changes to Figure 6 and Figure 8 ................................................... 7
Changes to Figure 13 and Figure 14 ............................................... 8
Changes to Figure 20 ........................................................................ 9
Changes to Figure 21 to Figure 25 ................................................ 10
Changes to Figure 26 and Figure 30 ............................................. 11
Replaced Figure 28 ......................................................................... 11
Changes to Applications Information Section ............................ 12
Updated Outline Dimensions ....................................................... 13
Changes to Ordering Guide .......................................................... 14
Thermal Resistance .......................................................................6
ESD Caution...................................................................................6
Typical Performance Characteristics ..............................................7
Typical Applications ....................................................................... 11
Applications Information .......................................................... 12
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 14
8/03—Rev. B to Rev. C
Changes to OP07E Electrical Specifications .................................. 2
Changes to OP07C Electrical Specifications ................................. 3
Edits to Ordering Guide ................................................................... 5
Edits to Figure 6 ................................................................................. 9
Updated Outline Dimensions ....................................................... 11
3/03—Rev. A to Rev. B
Updated Package Titles ...................................................... Universal
Updated Outline Dimensions ....................................................... 11
2/02—Rev. 0 to Rev. A
Edits to Features ................................................................................. 1
Edits to Ordering Guide ................................................................... 1
Edits to Pin Connection Drawings ................................................. 1
Edits to Absolute Maximum Ratings .............................................. 2
Deleted Electrical Characteristics .............................................. 2–3
Deleted OP07D Column from Electrical Characteristics ....... 4–5
Edits to TPCs ................................................................................ 7–9
Edits to High-Speed, Low V
Composite Amplifier ................... 9
OS
Rev. E | Page 2 of 16
OP07
SPECIFICATIONS
OP07E ELECTRICAL CHARACTERISTICS
VS = ±15 V, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
TA = 25°C
Input Offset Voltage
Long-Term VOS Stability
1
V
2
Input Offset Current IOS 0.5 3.8 nA
Input Bias Current IB ±1.2 ±4.0 nA
Input Noise Voltage en p-p 0.1 Hz to 10 Hz
Input Noise Voltage Density en fO = 10 Hz 10.3 18.0 nV/√Hz
f
f
Input Noise Current In p-p 14 30 pA p-p
Input Noise Current Density In fO = 10 Hz 0.32 0.80 pA/√Hz
f
f
Input Resistance, Differential Mode
4
R
Input Resistance, Common Mode R
Input Voltage Range IVR ±13 ±14 V
Common-Mode Rejection Ratio CMRR VCM = ±13 V 106 123 dB
Power Supply Rejection Ratio PSRR VS = ±3 V to ±18 V 5 20 μV/V
Large Signal Voltage Gain AVO RL ≥ 2 kΩ, VO = ±10 V 200 500 V/mV
R
0°C ≤ TA ≤ 70°C
Input Offset Voltage
Voltage Drift Without External Trim
Voltage Drift with External Trim
1
V
4
TCV
3
TCV
Input Offset Current IOS 0.9 5.3 nA
Input Offset Current Drift TCIOS 8 35 pA/°C
Input Bias Current IB ±1.5 ±5.5 nA
Input Bias Current Drift TCIB 13 35 pA/°C
Input Voltage Range IVR ±13 ±13.5 V
Common-Mode Rejection Ratio CMRR VCM = ±13 V 103 123 dB
Power Supply Rejection Ratio PSRR VS = ±3 V to ±18 V 7 32 μV/V
Large Signal Voltage Gain AVO RL ≥ 2 kΩ, VO = ±10 V 180 450 V/mV
OUTPUT CHARACTERISTICS
TA = 25°C
Output Voltage Swing VO RL ≥ 10 kΩ ±12.5 ±13.0 V
R
R
0°C ≤ TA ≤ 70°C
Output Voltage Swing VO RL ≥ 2 kΩ ±12 ±12.6 V
30 75 μV
OS
VOS/Time 0.3 1.5 μV/Month
3
0.35 0.6 μV p-p
= 100 Hz
O
= 1 kHz 9.6 11.0 nV/√Hz
O
= 100 Hz
O
= 1 kHz 0.12 0.17 pA/√Hz
O
15 50 MΩ
IN
160 GΩ
INCM
≥ 500 Ω, VO = ±0.5 V, VS = ±3 V
L
3
10.0 13.0 nV/√Hz
3
0.14 0.23 pA/√Hz
4
150 400 V/mV
45 130 μV
OS
0.3 1.3 μV/°C
OS
RP = 20 kΩ 0.3 1.3 μV/°C
OSN
≥ 2 kΩ ±12.0 ±12.8 V
L
≥ 1 kΩ ±10.5 ±12.0 V
L
Rev. E | Page 3 of 16
OP07
Parameter Symbol Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
TA = 25°C
Slew Rate SR RL ≥ 2 kΩ
Closed-Loop Bandwidth BW A
Open-Loop Output Resistance RO VO = 0, IO = 0 60 Ω
Power Consumption Pd VS = ±15 V, No load 75 120 mW
V
Offset Adjustment Range RP = 20 kΩ ±4 mV
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
2
Long-term input offset voltage stability refers to the averaged trend time of VOS vs. the time over extended periods after the first 30 days of operation. Excluding the
initial hour of operation, changes in VOS during the first 30 operating days are typically 2.5 μV. Refer to the Typi section. Parameter is
sample tested.
3
Sample tested.
4
Guaranteed by design.
5
Guaranteed but not tested.
OP07C ELECTRICAL CHARACTERISTICS
VS = ±15 V, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
TA = 25°C
Input Offset Voltage1 VOS 60 150 μV
Long-Term VOS Stability2 VOS/Time 0.4 2.0 μV/Month
Input Offset Current IOS 0.8 6.0 nA
Input Bias Current IB ±1.8 ±7.0 nA
Input Noise Voltage en p-p 0.1 Hz to 10 Hz3 0.38 0.65 μV p-p
Input Noise Voltage Density en fO = 10 Hz 10.5 20.0 nV/√Hz
f
f
Input Noise Current In p-p 15 35 pA p-p
Input Noise Current Density In fO = 10 Hz 0.35 0.90 pA/√Hz
f
f
Input Resistance, Differential Mode4 RIN 8 33 MΩ
Input Resistance, Common Mode R
Input Voltage Range IVR ±13 ±14 V
Common-Mode Rejection Ratio CMRR VCM = ±13 V 100 120 dB
Power Supply Rejection Ratio PSRR VS = ±3 V to ±18 V 7 32 μV/V
Large Signal Voltage Gain AVO RL ≥ 2 kΩ, VO = ±10 V 120 400 V/mV
R
−40°C ≤ TA ≤ +85°C
Input Offset Voltage
Voltage Drift Without External Trim
Voltage Drift with External Trim
Input Offset Current IOS 1.6 8.0 nA
Input Offset Current Drift TCIOS 12 50 pA/°C
Input Bias Current IB ±2.2 ±9.0 nA
Input Bias Current Drift TCIB 18 50 pA/°C
Input Voltage Range IVR ±13 ±13.5 V
Common-Mode Rejection Ratio CMRR VCM = ±13 V 97 120 dB
Power Supply Rejection Ratio PSRR VS = ±3 V to ±18 V 10 51 μV/V
Large Signal Voltage Gain AVO RL ≥ 2 kΩ, VO = ±10 V 100 400 V/mV
1
V
4
TCV
3
TCV
3
0.1 0.3 V/μs
5
= 1
VOL
= ±3 V, No load 4 6 mW
S
cal Performance Characteristics
0.4 0.6 MHz
= 100 Hz3 10.2 13.5 nV/√Hz
O
= 1 kHz 9.8 11.5 nV/√Hz
O
= 100 Hz3 0.15 0.27 pA/√Hz
O
= 1 kHz 0.13 0.18 pA/√Hz
O
120 GΩ
INCM
≥ 500 Ω, VO = ±0.5 V, VS = ±3 V
L
4
100 400 V/mV
85 250 μV
OS
0.5 1.8 μV/°C
OS
RP = 20 kΩ 0.4 1.6 μV/°C
OSN
Rev. E | Page 4 of 16
OP07
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT CHARACTERISTICS
TA = 25°C
Output Voltage Swing VO RL ≥ 10 kΩ ±12.0 ±13.0 V
R
R
−40°C ≤ TA ≤ +85°C
Output Voltage Swing VO RL ≥ 2 kΩ ±12 ±12.6 V
DYNAMIC PERFORMANCE
TA = 25°C
Slew Rate SR RL ≥ 2 kΩ3 0.1 0.3 V/μs
Closed-Loop Bandwidth BW A
Open-Loop Output Resistance RO VO = 0, IO = 0 60 Ω
Power Consumption Pd VS = ±15 V, No load 80 150 mW
V
Offset Adjustment Range RP = 20 kΩ ±4 mV
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
2
Long-term input offset voltage stability refers to the averaged trend time of VOS vs. the time over extended periods after the first 30 days of operation. Excluding the
initial hour of operation, changes in VOS during the first 30 operating days are typically 2.5 μV. Refer to the Typi section. Parameter is
sample tested.
3
Sample tested.
4
Guaranteed by design.
5
Guaranteed but not tested.
≥ 2 kΩ ±11.5 ±12.8 V
L
≥ 1 kΩ ±12.0 V
L
= 15 0.4 0.6 MHz
VOL
= ±3 V, No load 4 8 mW
S
cal Performance Characteristics
Rev. E | Page 5 of 16
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