Matched Monolithic
a
FEATURES
Low V
Low TCV
High h
Excellent h
Low Noise Voltage: 0.23 V p-p—0.1 Hz to 10 Hz
High Breakdown: 45 V min
PRODUCT DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive
Silicon Nitride “Triple-Passivation” process provides excellent
stability of critical parameters over both temperature and time.
Matching characteristics include offset voltage of 40 µV, tem-
perature drift of 0.15 µV/°C, and h
high h
including an exceptional h
10 nA. The high gain at low collector current makes the
MAT01 ideal for use in low power, low level input stages.
(VBE Match): 40 V typ, 100 V max
OS
: 0.5 V/ⴗC max
OS
: 500 min
FE
Linearity from 10 nA to 10 mA
FE
matching of 0.7%. Very
is provided over a six decade range of collector current,
FE
FE
FE
of 590 at a collector current of only
Dual Transistor
MAT01
PIN CONNECTION
TO-78
(H Suffix)
NOTE: Substrate is connected to case.
BURN-IN CIRCUIT
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2002
MAT01–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Min Typ Min Unit
Breakdown Voltage BV
Offset Voltage V
CEO
OS
(@ VCB = 15 V, IC = 10 A, TA = 25ⴗC, unless otherwise noted.)
MAT01AH MAT01GH
IC = 100 µA45 45 V
0.04 0.1 0.10 0.5 mV
Offset Voltage Stability
First Month V
/Time (Note 1) 2.0 2.0 µV/Mo
OS
Long Term (Note 2) 0.2 0.2 µV/Mo
Offset Current I
Bias Current I
Current Gain h
Current Gain Match ∆h
OS
B
FE
FE
IC = 10 nA 590 430
= 10 µA 500 770 250 560
I
C
I
= 10 mA 840 610
C
IC = 10 µA 0.7 3.0 1.0 8.0 %
100 nA ≤ I
Low Frequency Noise
Voltage en p-p 0.1 Hz to 10 Hz
≤ 10 mA 0.8 1.2 %
C
3
0.1 0.6 0.2 3.2 nA
13 20 18 40 nA
0.23 0.4 0.23 0.4 µV p-p
Broadband Noise
Voltage e
Noise Voltage
Density e
Offset Voltage Change ∆V
Offset Current Change ∆I
Collector-Base
Leakage Current I
Collector-Emitter
Leakage Current I
Collector-Collector
Leakage Current I
Collector Saturation V
Voltage I
Gain-Bandwidth Product f
Output Capacitance C
rms 1 Hz to 10 kHz 0.60 0.60 µV rms
n
n
OS/∆VCB
OS/∆VCB
CBO
CES
CC
CE(SAT)
T
OB
fO = 10 Hz
f
= 100 Hz
O
f
= 1000 Hz
O
0 ≤ VCB ≤ 30 V 0.5 3.0 0.8 8.0 µV/V
0 ≤ VCB ≤ 30 V 2 15 3 70 pA/V
VCB = 30 V, IE = 0
VCE = 30 V, VBE = 0
VCC = 30 V
IB = 0.1 mA, IC = 1 mA 0.12 0.20 0.12 0.25 V
= 1 mA, IC = 10 mA 0.8 0.8 V
B
VCE = 10 V, IC = 10 mA 450 450 MHz
VCB = 15 V, IE = 0 2.8 2.8 pF
3
3
3
4
4, 5
5
7.0 9.0 7.0 9.0 nV/√Hz
6.1 7.6 6.1 7.6 nV/√Hz
6.0 7.5 6.0 7.5 nV/√Hz
15 50 25 200 pA
50 200 90 400 pA
20 200 30 400 pA
Collector-Collector
Capacitance C
CC
V
= 0 8.5 8.5 pF
CC
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Min Typ Min Unit
Offset Voltage V
OS
(@ VCB = 15 V, IC = 10 A, –55ⴗC ≤ TA ≤ +125ⴗC, unless otherwise noted.)
MAT01AH MAT01GH
0.06 0.15 0.14 0.70 mV
Average Offset
Voltage Drift TCV
Offset Current I
OS
OS
(Note 6) 0.15 0.50 0.35 1.8 µV/°C
0.9 8.0 1.5 15.0 nA
Average Offset
Current Drift TCI
Bias Current Ι
Current Gain h
Collector-Base I
OS
Β
FE
CBO
Leakage Current I
Collector-Emitter I
CES
Leakage Current V
Collector-Collector I
CC
(Note 7) 10 90 15 150 pA/°C
28 60 36 130 nA
167 400 77 300
TA = 125°C, VCB = 30 V,
4
= 0
E
TA = 125°C, VCE = 30 V,
BE
= 0
4, 6
15 80 25 200 nA
50 300 90 400 nA
TA = 125°C, VCC = 30 V,
Leakage Current (Note 6) 30 200 50 400 nA
–2–
REV. B
MAT01
TYPICAL ELECTRICAL CHARACTERISTICS
(@ VCB = 15 V and IC = 10 A, TA = +25ⴗC, unless otherwise noted.)
MAT01N
Parameter Symbol Conditions Typical Unit
Average Offset Voltage Drift TCV
Average Offset Current Drift TCI
OS
OS
0.35 µV/°C
15 pA/°C
Collector-Emitter-Leakage
Current I
CES
VCE = 30 V, VBE = 0 90 pA
Collector-Base-Leakage
Current I
Gain Bandwidth Product f
CBO
T
Offset Voltage Stability ∆V
/T First Month (Note 1) 2.0 µV/Mo
OS
VCB = 30 V, IE = 0 25 pA
VCE = 10 V, IC = 10 mA 450 MHz
Long-Term (Note 2) 0.2 µV/Mo
NOTES
1
Exclude first hour of operation to allow for stabilization.
2
Parameter describes long-term average drift after first month of operation.
3
Sample tested.
4
The collector-base (I
reduced by a factor of two to ten times by connecting the substrate (package) to
a potential which is lower than either collector voltage.
5
ICC and I
6
Guaranteed by VOS test (TCVOS ≅
7
Guaranteed by IOS test limits over temperature.
Specifications subject to change without notice.
are guaranteed by measurement of I
CES
) and collector-emitter (I
CBO
V
OS
for VOS VBE) T = 298°K for TA = 25°C.
T
) leakage currents may be
CES
.
CBO
REV. B
–3–
MAT01
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage (BV
CBO
1
)
MAT01AH, GH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Collector-Emitter Voltage (BV
CEO
)
MAT01AH, GH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Collector-Collector Voltage (BV
CC
)
MAT01AH, GH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Emitter-Emitter Voltage (BV
EE
)
MAT01AH, GH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Emitter-Base Voltage (BV
Collector Current (I
Emitter Current (I
) . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA
C
) . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA
E
Total Power Dissipation
Case Temperature ≤ 40°C
Ambient Temperature ≤ 70°C
)2 . . . . . . . . . . . . . . . . . . . . . 5 V
EBO
3
. . . . . . . . . . . . . . . . . . . . 1.8 W
4
. . . . . . . . . . . . . . . 500 mW
Operating Ambient Temperature . . . . . . . . . –55°C to +125°C
Operating Junction Temperature . . . . . . . . . –55°C to +150°C
ORDERING GUIDE
VOS max Temperature Package
Model (TA = 25ⴗC) Range Option
2
MAT01AH
0.1 mV –55°C to +125°C TO-78
MAT01GH 0.5 mV –55°C to +125°C TO-78
NOTES
1
Burn-in is available on commercial and industrial temperature range parts in
TO-can packages.
2
For devices processed in total compliance to MIL-STD-883, add/883 after part
number. Consult factory for 883 data sheet.
Storage Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . 300°C
DICE Junction Temperature . . . . . . . . . . . . –65°C to +150°C
NOTES
1
Absolute maximum ratings apply to both DICE and packaged devices.
2
Application of reverse bias voltages in excess of rating shown can result in
degradation of hFE and hFE matching characteristics. Do not attempt to measure
BV
greater than the 5 V rating shown.
EBO
3
Rating applies to applications using heat sinking to control case temperature.
Derate linearity at 16.4 mW/°C for case temperatures above 40°C.
4
Rating applies to applications not using heat sinking; device in free air only. Derate
linearity at 6.3 mW/°C for ambient temperatures above 70°C.
1
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the MAT01 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–4–
REV. B
Typical Performance Characteristics–MAT01
TPC 1. Offset Voltage
vs. Temperature
TPC 4. Current Gain
vs. Collector Current
TPC 2. Offset Voltage vs. Time
TPC 5. Current Gain
vs. Temperature
TPC 3. Base-Emitter Voltage
vs. Collector Current
TPC 6. Saturation Voltage
vs. Collector Current
REV. B
TPC 7. Noise Voltage
TPC 8. Noise Current Density
–5–
TPC 9. Gain-Bandwidth
vs. Collector Current
MAT01
MAT01 TEST CIRCUITS
Figure 1. MAT01 Matching Measurement Circuit
Figure 2. MAT01 Noise Measurement Circuit
–6–
REV. B
Typical Performance Characteristics–MAT01
APPLICATION NOTES
Application of reverse bias voltages to the emitter-base junctions
in excess of ratings (5 V) may result in degradation of h
h
matching characteristics. Circuit designs should be checked
FE
to ensure that reverse bias voltages above 5 V cannot be applied
during such transient conditions as at circuit turn-on and
turn-off.
Stray thermoelectric voltages generated by dissimilar metals at
the contacts to the input terminals can prevent realization of the
predicted drift performance. Both input terminals should be
maintained at the same temperature, preferably close to the
temperature of the device’s package.
TYPICAL APPLICATIONS
FE
and
Figure 4. Basic Digital Thermometer Readout in
°
Degrees Kelvin (
K)
Figure 3. Precision Reference
Figure 5. Digital Thermometer with Readout in °C
REV. B
–7–
MAT01
0.185 (4.70)
0.165 (4.19)
0.370 (9.40)
0.335 (8.51)
0.335 (8.51)
0.305 (7.75)
0.040 (1.02) MAX
0.045 (1.14)
0.010 (0.25)
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
H-06A
6-Lead Metal Can (TO-78)
REFERENCE PLANE
0.750 (19.05)
0.500 (12.70)
0.250 (6.35) MIN
0.050 (1.27) MAX
0.019 (0.48)
0.016 (0.41)
0.021 (0.53)
0.016 (0.41)
BASE & SEATING PLANE
0.200
(5.08)
BSC
0.100
(2.54)
BSC
0.100 (2.54) BSC
4
3
2
1
0.034 (0.86)
0.027 (0.69)
0.160 (4.06)
0.110 (2.79)
5
6
45° BSC
0.045 (1.14)
0.027 (0.69)
C00282–0–2/02(B)
Revision History
Location Page
Data Sheet changed from REV. A to REV. B.
Edits to FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Deleted WAFER TEST LIMITS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Deleted DICE CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Edits to Table 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
PRINTED IN U.S.A.
–8–
REV. B
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