The LTC
zero-drift operational amplifier. The two sample-and-hold
capacitors usually required externally by other chopper
amplifiers are integrated on-chip. Further, LTC’s proprietary high-voltage CMOS structures allow the LTC1150 to
operate at up to 32V total supply voltage.
The LTC1150 has an offset voltage of 0.5µV, drift of
0.01µV/°C, 0.1Hz to 10Hz input noise voltage of 1.8µV
and a typical voltage gain of 180dB. The slew rate of 3V/µs
and a gain bandwidth product of 2.5MHz are achieved with
0.8mA of supply current. Overload recovery times from
positive and negative saturation conditions are 3ms and
20ms, respectively.
1150 is a high-voltage, high-performance
P-P
U
APPLICATIO S
■
Strain Gauge Amplifiers
■
Electronic Scales
■
Medical Instrumentation
■
Thermocouple Amplifiers
■
High Resolution Data Acquisition
TYPICAL APPLICATIO
Single Supply Instrumentation AmplifierNoise Spectrum
1k
+
V
1M
2
7
–
LTC1150
3
–V
IN
+
6
4
1k
For applications demanding low power consumption,
Pin 1 can be used to program the supply current. Pin 5 is
an optional AC-coupled clock input, useful for
synchronization.
The LTC1150 is available in standard 8-lead, plastic dualin-line package, as well as an 8-lead SO package. The
LTC1150 can be a plug-in replacement for most standard
bipolar op amps with significant improvement in DC
performance.
, LTC and LT are registered trademarks of Linear Technology Corporation.
U
160
1M
+
V
2
7
–
LTC1150
3
V
IN
+
6
GAIN = 1000V/V
4
OUTPUT OFFSET ≤ 5mV
TOTAL SUPPLY CURRENT
DECREASES TO 400µA
WHEN BOTH PIN 1s ARE
GROUNDED
V
OUT
LTC1150 •TA01
140
120
100
80
60
40
VOLTAGE NOISE DENSITY (nV√Hz)
20
0
101k10k100k
100
FREQUENCY (Hz)
LTC1150 •TA02
1150fb
1
Page 2
LTC1150
WWWU
ABSOLUTE AXI U RATI GS
(Note 1)
Total Supply Voltage (V+ to V–) ............................... 32V
+
Input Voltage (Note 2) .............. (V
0.3V) to (V– –0.3V)
Output Short Circuit Duration .......................... Indefinite
Burn-In Voltage ....................................................... 32V
Operating Temperature Range
LTC1150M (OBSOLETE).....................–55°C to 125°C
LTC1150C .......................................... – 40°C to 85°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
UU
W
PACKAGE/ORDER I FOR ATIO
TOP VIEW
I
SUPPLY
1
–IN
2
+IN
3
–
V
4
N8 PACKAGE
8-LEAD PDIP
T
= 110°C, θJA = 130°C/W
JMAX
J8 PACKAGE
8-LEAD CERDIP
CLOCK OUT
8
+
V
7
OUT
6
EXT CLOCK
5
IN
OBSOLETE PACKAGE
Consider the N8 or S8 Package as an Alternate Source
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ORDER PART
NUMBER
LTC1150CN8
LTC1150MJ8
LTC1150CJ8
I
SUPPLY
TOP VIEW
1
–IN
2
+IN
3
–
V
4
S8 PACKAGE
8-LEAD PLASTIC SO
= 110°C, θJA = 200°C/W
T
JMAX
ORDER PART
NUMBER
8
CLOCK OUT
+
V
–
+
7
OUT
6
EXT CLOCK
5
IN
LTC1150CS8
S8 PART
MARKING
1150
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range otherwise specifications are at TA = 25°C. VS = ±15V, Pin 1 = Open, unless otherwise noted.
LTC1150MLTC1150C
PARAMETER CONDITIONSMIN TYP MAX MIN TYP MAX UNITS
Input Offset Voltage(Note 3)±0.5±10±0.5±10µV
Average Input Offset Drift(Note 3)●±0.01 ±0.05±0.01±0.05µV/°C
Long Term Offset Voltage Drift5050nV/√mo
Input Offset Current±20±60±20±200pA
●±1.5±0.5nA
Input Bias Current±10±50±10±100pA
●±2.5±1.0nA
Input Noise VoltageRS = 100Ω, 0.1Hz to 10Hz, TC21.81.8µV
RS = 100Ω, 0.1Hz to 1Hz, TC20.60.6
Input Noise Currentf = 10Hz (Note 4)1.81.8fA/√Hz
Common Mode Rejection RatioVCM = V– to 12V●110130110130dB
Power Supply Rejection RatioVS = ±2.375V to ±16V●120145120145dB
Large-Signal Voltage GainRL = 10kΩ, V
Maximum Output Voltage SwingRL = 10kΩ±13.5±14.5±13.5±14.5V
RL = 10kΩ●10.5/10.5/
RL = 100kΩ±14.95±14.95
= ±10V●135180135180dB
OUT
–13.5–13.5
P-P
1150fb
2
Page 3
LTC1150
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VS = ±15V, Pin 1 = Open, unless otherwise noted.
LTC1150MLTC1150C
PARAMETERCONDITIONSMIN TYP MAX MIN TYP MAX UNITS
Slew RateRL = 10kΩ, CL = 50pF33V/µs
Gain Bandwidth Product2.52.5MHz
Supply CurrentNo Load0.81.50.81.5mA
No Load, Pin 1 = V
No Load
Internal Sampling Frequency550550Hz
–
●22
0.20.2
The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C.
V
= 5V, Pin 1 = Open, unless otherwise noted.
S
LTC1150MLTC1150C
PARAMETER CONDITIONSMIN TYP MAX MIN TYP MAX UNITS
Input Offset Voltage(Note 3)±0.5±10±0.05±10µV
Average Input Offset Drift(Note 3)●±0.01 ±0.05±0.01±0.05µV/°C
Long Term Offset Voltage Drift5050µV/√mo
Input Offset Current±10±60±10±60pA
Input Bias Current±5±30±5±30pA
Input Noise VoltageRS = 100Ω, 0.1Hz to 10Hz, TC22.02.0µV
RS = 100Ω, 0.1Hz to 1Hz, TC20.70.7
Input Noise Currentf = 10Hz (Note 4)1.31.3fA/√Hz
Common Mode Rejection RatioVCM = 0V to 2.7V●106130106130dB
Power Supply Rejection RatioVS = ±2.375V to ±16V●120145120145dB
Large-Signal Voltage GainRL = 10kΩ, V
Maximum Output Voltage Swing RL = 10kΩ0.15 to 4.850.15 to 4.85V
= 100kΩ0.02 to 4.970.02 to 4.97
R
L
Slew RateRL = 10kΩ, CL = 50pF1.51.5V/µs
Gain Bandwidth Product1.81.8MHz
Supply CurrentNo Load0.410.41mA
Internal Sampling Frequency300300Hz
= 0.3V to 4.5V●115180115180dB
OUT
●1.51.5
P-P
Note 1: Absolute Maximum Ratings are those values beyond which life of
the device may be impaired.
Note 2: Connecting any terminal to voltages greater than V
–
may cause destructive latch-up. It is recommended that no sources
V
operating from external supplies be applied prior to power-up of the
LTC1150.
+
or less than
Note 3: These parameters are guaranteed by design. Thermocouple effects
preclude measurement of these voltage levels in high-speed automatic test
systems. V
capability.
Note 4: Current Noise is calculated from the formula:
where q = 1.6 • 10
is measured to a limit determined by test equipment
OS
I
= √(2q • Ib)
N
–19
Coulomb.
1150fb
3
Page 4
LTC1150
LTC1150 •TC02
100k
475k
TO X-Y
RECORDER
475k
FOR 1Hz NOISE BW, INCREASE ALL THE CAPACITORS BY A FACTOR OF 10
316k
0.1µF0.1µF
0.1µF
158k
10Ω
LTC1150
+
–
LT1012
+
–
LTC1150 • TPC06
FREQUENCY (Hz)
0
GAIN (dB)
PHASE (DEGREES)
20
60
100
120
10010k100k10M
–20
1k
1M
80
40
–40
180
160
120
80
60
200
100
140
220
VS = ± 15V
C
L
= 100pF
PIN 1 = –15V
PHASE
GAIN
TEST CIRCUITS
Offset Voltage Test Circuit
1M
+
2
3
V
–
LTC1150
+
V
7
6
OUTPUT
4
–
R
L
LTC1150 •TC01
1k
UW
TYPICAL PERFOR A CE CHARACTERISTICS
Supply Current vs Supply Voltage
1000
TA = 25°C
900
800
700
600
500
SUPPLY CURRENT (µA)
400
300
200
8
4
12
TOTAL SUPPLY VOLTAGE, V+ TO V– (V)
16
20
24
28
32
LTC1150 • TPC01
36
1400
VS = ± 15V
1200
1000
800
600
SUPPLY CURRENT (µA)
400
200
–55
53565
–25
AMBIENT TEMPERATURE (°C)
95125
LTC1150 • TPC02
DC-10Hz Noise Test Circuit
Gain/Phase vs FrequencySupply Current vs Temperature
120
VS = ± 15V
= 100pF
C
L
100
80
60
40
GAIN (dB)
20
0
–20
–40
10010k100k10M
GAIN
1k
FREQUENCY (Hz)
PHASE
1M
LTC1150 • TPC03
60
80
100
PHASE (DEGREES)
120
140
160
180
200
220
Output Short-Circuit Current vs
Supply Voltage
6
(mA)
4
OUT
2
0
–3
–6
–9
–12
SHORT-CIRCIUT OUTPUT CURRENT, I
–15
4
4
–
V
= V
OUT
I
SOURCE
+
V
= V
OUT
I
SINK
TOTAL SUPPLY VOLTAGE, V+ TO V– (V)
PIN 1 = OPEN
8
12
16
PIN 1 = OPEN
–
PIN 1 = V
PIN 1 = V
20
24
TA = 25°C
–
28
32
LTC1150 • TPC04
36
SET
1200
V
= ± 15V
S
= 25°C
T
A
1000
800
600
400
SUPPLY CURRENT (µA)
200
0
1k
10k100k1M
R
, PIN 1 TO V
SET
–
(Ω)
LTC1150 • TPC05
Gain/Phase vs FrequencySupply Current vs R
1150fb
Page 5
UW
TYPICAL PERFOR A CE CHARACTERISTICS
LTC1150
Input Bias Current vs Supply
VoltageGain/Phase vs Frequency
12
TA = 25°C
= OV
V
CM
10
8
6
4
INPUT BIAS CURRENT (pA)
2
0
0
± 4± 8
± 2± 6
SUPPLY VOLTAGE (V)
± 10
± 12
LTC1150 • TPC07
±14
±16
Input Bias Current vs Input
Common Mode VoltageInput Bias Current vs Temperature
40
30
20
10
0
–10
–20
INPUT BIAS CURRENT (pA)
–30
–40
–I
B
+I
B
–15 –10–5
INPUT COMMON MODE VOLTAGE (V)
0
5
VS = ± 15V
= 25°C
T
A
10
LTC1150 • TPC10
15
Undistorted Output Swing vs
Frequency
30
25
20
15
10
OUTPUT VOLTAGE (Vp-p)
5
0
10010k100k1M
–1000
–100
–10
INPUT BIAS CURRENT (pA)
–1
–50 –25
PIN 1 = FLOATING
1k
VCM = 0
= ± 15V
V
S
–I
B
0255075100 125
TEMPERATURE (°C)
–
PIN 1 = V
RL = 10k
= 100k
R
L
FREQUENCY (Hz)
+I
B
LTC1150 • TPC08
LTC1150 • TPC11
120
VS = ±2.5V
= 100pF
C
L
100
80
60
40
GAIN (dB)
20
0
–20
–40
10010k100k10M
GAIN
1k
FREQUENCY (Hz)
Common Mode Input Range vs
Supply Voltage
15
TA = 25°C
10
5
0
–5
COMMON MODE RANGE (V)
–10
–15
0
±5±7.5 ±10
±2.5
SUPPLY VOLTAGE (V)
PHASE
1M
LTC1150 • TPC09
±12.5 ±15
LTC1150 • TPC12
60
80
100
PHASE (DEGREES)
120
140
160
180
200
220
CMRR vs Frequency
160
140
120
100
80
CMRR (dB)
60
40
20
0
10
11001k100k
FREQUENCY (Hz)
10k
LTC1150 • TPC13
PSRR vs Frequency
160
140
120
100
80
PSRR (dB)
60
40
20
0
11001k100k
POSITIVE SUPPLY, PIN 1 = OPEN
POSITIVE SUPPLY,
PIN 1 = V
NEGATIVE SUPPLY,
PIN 1 = OPEN
NEGATIVE SUPPLY, PIN 1 = V
10
FREQUENCY (Hz)
–
–
10k
LTC1150 • TPC14
Offset Voltage vs
Sampling Frequency
10
VA = ± 15V
T
= 25°C
A
8
6
4
OFFSET VOLTAGE (µV)
2
0
0
–
PIN 1 = V
1k
SAMPLING FREQUENCY, fS (Hz)
PIN 1 = OPEN
2k
LTC1150 • TPC15
3k
1150fb
5
Page 6
LTC1150
LTC1150 • TPC18
AMBIENT TEMPERATURE (°C)
–55
300
SAMPLING FREQUENCY (Hz)
400
500
600
700
900
–25
53565
95125
800
VS = ± 15V
UW
TYPICAL PERFOR A CE CHARACTERISTICS
Offset Voltage Drift vs Sampling
Frequency
100
VS = ± 15V
90
80
70
60
50
40
30
20
OFFSET VOLTAGE DRIFT (nV/C°)
10
0
100
SAMPLING FREQUENCY, fS (Hz)
PIN 1 = OPEN
1k10k
Large-Signal Transient Response
LTC1150 • TPC16
10Hz p-p Noise vs Sampling
Frequency
4
VS = ± 15V
= 25°C
T
A
3
2
1
10Hz PEAK-TO-PEAK NOISE (µV)
0
100
SAMPLING FREQUENCY, fS (Hz)
Large-Signal Transient Response,
Pin 1 = V
1k10k
LTC1150 • TPC17
–
Sampling Frequency vs
Temperature
Small-Signal Transient Response
Small-Signal Transient Response,
Pin 1 = V
VS = ±15V, AV = 1, CL = 100pF, RL = 10kΩ
–
VS = ±15V, AV = 1, CL = 100pF, RL = 10kΩ,
PIN 1 = V
–
VS = ±15V, AV = 1, CL = 100pF, PIN 1 = V
–
Overload Recovery from Negative
Saturation
VS = ±15V, AV = –100, 2ms/DIV
VS = ±15V, AV = 1, CL = 100pF, RL = 10kΩ
Overload Recovery from Positive
Saturation
VS = ±15V, AV = –100, 2ms/DIV
1150fb
6
Page 7
UW
TYPICAL PERFOR A CE CHARACTERISTICS
0.1Hz to 10Hz Noise, V = ±15V, TA = 25°C, Internal Clock
1µV
LTC1150
2.0µV
P-P
1s
0.1Hz to 10Hz Noise, V = ±15V, TA = 25°C, fS = 1800Hz
1µV
1s
0.1Hz to 1Hz Noise, V = ±15V, TA = 25°C, Internal Clock
10s
10s
LTC1150 • TPC25
1.0µV
LTC1150 • TPC26
P-P
500nV
10s
100s
700nV
LTC1150 • TPC27
P-P
1150fb
7
Page 8
LTC1150
UW
TYPICAL PERFOR A CE CHARACTERISTICS
0.1Hz to 1Hz Noise, V = ±15V, TA = 25°C, fS = 1800Hz
500nV
300nV
P-P
10s
UU
PI DESCRIPTIO S
I
SUPPLY
ply current can be programmed through Pin 1. When
Pin 1 is left open or tied to V+, the supply current defaults
to 800µA. Tying a resistor between Pin 1 and Pin 4, the
negative supply pin, will reduce the supply current. The
supply current, as a function of the resistor value, is
shown in Typical Performance Characteristics.
–IN (Pin 2): Inverting Input.
+IN (Pin 3): Noninverting Input.
V– (Pin 4): Negative Supply.
EXT CLOCK IN (Pin 5): Optional External Clock Input. The
LTC1150 has an internal oscillator to control the circuit
operation of the amplifier if Pin 5 is left open or biased at
any DC voltage in the supply voltage range. When an
external clock is desirable, it can be applied to Pin 5. The
applied clock is AC-coupled to the internal circuitry to
(Pin 1): Supply Current Programming. The sup-
8-Pin Packages
100s
simplified interface requirements. The amplitude of the
clock input signal needs to be greater than 2V and the
voltage level has to be within the supply voltage range.
Duty cycle is not critical. The internal chopping frequency
is the external clock frequency divided by four. When
frequency of the external clock falls below 100Hz (internal
chopping at 25Hz), the internal oscillator takes over and
the circuit chops at 550Hz.
OUT (Pin 6): Output.
V+ (Pin 7): Positive Supply.
CLOCK OUT (Pin 8): Clock Output. The signal coming out
of this pin is at the internal oscillator frequency of about
2.2kHz (four times the chopping frequency) and has
voltage levels at VH = VS and VL = VS –4.6. If the circuit is
driven by an external clock, Pin 8 is pulled up to VS.
LTC1150 • TPC28
8
1150fb
Page 9
LTC1150 •AI01
OUTPUT
NOMINALLY UNNECESSARY
RESISTOR USED TO
THERMALLY BALANCE
OTHER INPUT RESISTOR
RESISTOR LEAD, SOLDER,
COPPER TRACE JUNCTION
LEAD WIRE/SOLDER
COPPER TRACE JUNCTION
LTC1150
+
–
WUUU
APPLICATIO S I FOR ATIO
LTC1150
ACHIEVING PICOAMPERE/MICROVOLT
PERFORMANCE
Picoamperes
In order to realize the picoampere level of accuracy of the
LTC1150, proper care must be exercised. Leakage currents in circuitry external to the amplifier can significantly
degrade performance. High quality insulation should be
used (e.g., Teflon, Kel-F); cleaning of all insulating surfaces to remove fluxes and other residues will probably
be necessary–particularly for high temperature performance. Surface coating may be necessary to provide a
moisture barrier in high humidity environments.
Board leakage can be minimized by encircling the input
connections with a guard ring operated at a potential
close to that of the inputs: in inverting configurations the
guard ring should be tied to ground; in noninverting
connections to the inverting input. Guarding both sides
of the printed circuit board is required. Bulk leakage
reduction depends on the guard ring width.
number of junctions in the amplifier’s input signal path.
Avoid connectors, sockets, switches, and relays where
possible. In instances where this is not possible, attempt
to balance the number and type of junctions so that
differential cancellation occurs. Doing this may involve
deliberately introducing junctions to offset unavoidable
junctions.
Figure 1 is an example of the introduction of an unnecessary resistor to promote differential thermal balance.
Maintaining compensating junctions in close physical
proximity will keep them at the same temperature and
reduce thermal EMF errors.
Microvolts
Thermocouple effects must be considered if the LTC1150’s
ultralow drift is to be fully utilized. Any connection of
dissimilar metals forms a thermoelectric junction producing an electric potential which varies with temperature
(Seebeck effect). As temperature sensors, thermocouples
exploit this phenomenon to produce useful information.
In low drift amplifier circuits the effect is a primary source
of error.
Connectors, switches, relay contacts, sockets, resistors,
solder, and even copper wire are all candidates for
thermal EMF generation. Junctions of copper wire from
different manufacturers can generate thermal EMFs of
200nV/°C—four times the maximum drift specification
of the LTC1150. The copper/kovar junction, formed when
wire or printed circuit traces contact a package lead, has
a thermal EMF of approximately 35µV/°C—700 times the
maximum drift specification of the LTC1150.
Minimizing thermal EMF-induced errors is possible if
judicious attention is given to circuit board layout and
component selection. It is good practice to minimize the
Figure 1. Extra Resistors Cancel Thermal EMF
When connectors, switches, relays and/or sockets are
necessary, they should be selected for low thermal EMF
activity. The same techniques of thermally-balancing and
coupling the matching junctions are effective in reducing
the thermal EMF errors of these components.
Resistors are another source of thermal EMF errors.
Table 1 shows the thermal EMF generated for different
resistors. The temperature gradient across the resistor is
important, not the ambient temperature. There are two
junctions formed at each end of the resistor and if these
junctions are at the same temperature, their thermal EMFs
will cancel each other. The thermal EMF numbers are
approximate and vary with resistor value. High values give
higher thermal EMF.
1150fb
9
Page 10
LTC1150
WUUU
APPLICATIO S I FOR ATIO
Table 1. Resistor Thermal EMF
RESISTOR TYPETHERMAL EMF/°C GRADIENT
Tin Oxide~mV/°C
Carbon Composition~450µV/°C
Metal Film~20µV/°C
WireWound
Evenohm~2µV/°C
Manganin~2µV/°C
PACKAGE-INDUCED OFFSET VOLTAGE
Package-induced thermal EMF effects are another important source of errors. It arises at the copper/kovar
junctions formed when wire or printed circuit traces
contact a package lead. Like all the previously mentioned
thermal EMF effects, it is outside the LTC1150’s offset
nulling loop and cannot be cancelled. Metal can
H packages exhibit the worst warm-up drift. The input
offset voltage specification of the LTC1150 is actually set
by the package-induced warm-up drift rather than by the
circuit itself. The thermal time constant ranges from 0.5 to
3 minutes, depending on package type.
ALIASING
Like all sampled data systems, the LTC1150 exhibits
aliasing behavior at input frequencies near the sampling
frequency. The LTC1150 includes a high-frequency
correction loop which minimizes this effect; as a result,
aliasing is not a problem for most applications.
LEVEL SHIFTING THE CLOCK
Level shifting is needed if the clock output of the LTC1150
in ±15V operation must interface to regular 5V logic
circuits. Figures 2 and 3 show some typical level shifting
circuits.
When operated from single 5V or ±5V supplies, the
LTC1150 clock output at Pin 8 can interface to TTL or
CMOS inputs directly.
LOW SUPPLY OPERATION
The minimum supply for proper operation of the LTC1150
is typically below 4.0V (±2.0V). In single supply applications, PSRR is guaranteed down to 4.7V (±2.35V)
to ensure proper operation down to the minimum TTL
specified voltage of 4.75V.
15V
10k
7
2
–
8
LTC1150
3
+
–15V
Figure 2. Output Level Shift (Option 1)
6
4
10k
5V
LOGIC
CIRCUIT
LTC1150 • AI02
For a complete discussion of the correction circuitry and
aliasing behavior, please refer to the LTC1051/53 data
sheet.
SYNCHRONIZATION OF MULTIPLE LTC115O’S
When synchronization of several LTC1150’s is required,
one of the LTC1150’s can be used to provide the “master”
clock to control over 100 “slave” LTC1150’s. The master
clock, coming from Pin 8 of the master LTC1150, can
directly drive Pin 5 of the slaves. Note that Pin 8 of the slave
LTC1150’s will be pulled up to V
S.
If all the LTC1150’s are to be synchronized with an external
clock, then the external clock should drive Pin 5 of all the
LTC1150’s.
10
15V
2
–
LTC1150
3
+
–15V
Figure 3. Output Level Shift (Option 2)
100pF
7
8
6
4
10k
GND
10k
5V5V
LOGIC
CIRCUIT
LTC1150 • AI03
1150fb
Page 11
TYPICAL APPLICATIO S
LTC1150
U
Low Level Photodetector
15pF
SINGLE
POINT
SENSE
GROUND
HP 5082-4204
15V
7
2
–
LTC1150
3
+
4
–15V
1M
+
V
–
LTC1150
+
7
6
4
2
I
P
3
Ground Force Reference
1k
15V
1000pF
6
LT1010
–15V
10k
10Ω
OUTPUT = I
LTC1150 • TA03
• 109Ω
P
FORCED
GROUND
APPLICATION: TO FORCE TWO GROUND POINTS IN A SYSTEM WITHIN 5µV
LTC1150 • TA04
1150fb
11
Page 12
LTC1150
TYPICAL APPLICATIO S
10Ω
10Ω
U
Paralleling to Improve Noise
10k
–
LTC1150
10k
+
10k
–
LTC1150
10k25k
+
10k
CLK IN
MEASURED NOISE
CLK
FREE
RUN
CLK
DRIVEN
1800Hz
10Hz = 700nV
1Hz = 200nV
10Hz = 360nV
1Hz = 160nV
VOS = 1.1µV
P-P
P-P
VOS = 10µV
P-P
P-P
10Ω
IN
10Ω
–
LTC1150
+
10k
–
LTC1150
10k
10k
–
LTC1150
+
V
OUT
= 10k V
IN
+
LTC1150 • TA05
Battery Discharge Monitor
OPEN AT t = 0
C
+
R2
2
LOAD
–
LTC1150
3
+
I
ERROR ≤ +
R1
V
5µV
IR1
6
OUT
–IR1
= t
R2C
30pAIR2
R1
12
LTC1150 • TA06
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Page 13
PACKAGE DESCRIPTIO
LTC1150
U
J8 Package
8-Lead CERDIP (Narrow .300 Inch, Hermetic)
(Reference LTC DWG # 05-08-1110)
CORNER LEADS OPTION
(4 PLCS)
.023 – .045
(0.584 – 1.143)
HALF LEAD
.045 – .068
(1.143 – 1.650)
FULL LEAD
OPTION
.300 BSC
(7.62 BSC)
.008 – .018
(0.203 – 0.457)
NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE
OR TIN PLATE LEADS
0° – 15°
OPTION
OBSOLETE PACKAGE
.005
(0.127)
MIN
.025
(0.635)
RAD TYP
.045 – .065
(1.143 – 1.651)
.014 – .026
(0.360 – 0.660)
.405
(10.287)
MAX
87
12
65
3
4
.220 – .310
(5.588 – 7.874)
.015 – .060
(0.381 – 1.524)
.100
(2.54)
BSC
.200
(5.080)
MAX
.125
3.175
MIN
J8 0801
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13
Page 14
LTC1150
PACKAGE DESCRIPTIO
U
N8 Package
8-Lead PDIP (Narrow .300 Inch)
(Reference LTC DWG # 05-08-1510)
.255 ± .015*
(6.477 ± 0.381)
.400*
(10.160)
MAX
87 6
5
12
.300 – .325
(7.620 – 8.255)
.065
(1.651)
.008 – .015
(0.203 – 0.381)
+.035
.325
–.015
+0.889
8.255
()
–0.381
NOTE:
1. DIMENSIONS ARE
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .010 INCH (0.254mm)
INCHES
MILLIMETERS
TYP
.045 – .065
(1.143 – 1.651)
.100
(2.54)
BSC
3
4
.130 ± .005
(3.302 ± 0.127)
.120
(3.048)
MIN
.018 ± .003
(0.457 ± 0.076)
.020
(0.508)
MIN
N8 1002
14
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Page 15
PACKAGE DESCRIPTIO
.050 BSC
N
U
S8 Package
8-Lead Plastic Small Outline (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1610)
.189 – .197
.045 ±.005
(4.801 – 5.004)
7
8
NOTE 3
6
LTC1150
5
.245
MIN
123 N/2
.030 ±.005
TYP
RECOMMENDED SOLDER PAD LAYOUT
.010 – .020
(0.254 – 0.508)
.008 – .010
(0.203 – 0.254)
NOTE:
1. DIMENSIONS IN
2. DRAWING NOT TO SCALE
3. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm)
× 45°
.016 – .050
(0.406 – 1.270)
INCHES
(MILLIMETERS)
.160 ±.005
.228 – .244
(5.791 – 6.197)
.053 – .069
(1.346 – 1.752)
0°– 8° TYP
.014 – .019
(0.355 – 0.483)
TYP
N
.150 – .157
(3.810 – 3.988)
N/2
1
3
2
NOTE 3
4
.004 – .010
(0.101 – 0.254)
.050
(1.270)
BSC
SO8 0502
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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15
Page 16
LTC1150
TYPICAL APPLICATIO
U
DC Stabilized, Low Noise Amplifier
15V
INPUT
3
2
100k
+
LTC1150
–
4
–15V
0.01µF
130Ω
7
6
15V
1
3
+
LT1028
2
–
–15V
68Ω
7
8
6
4
15V
OUTPUT
10k
(A = 1000)
10Ω
LTC1150 • TA07
16
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
1150fb
LW/TP 1202 1K REV B • PRINTED IN USA
LINEAR TE CHNO LOG Y CO RPORATION 1991
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