ADuM5230
Rev. 0 | Page 3 of 16
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
All voltages are relative to their respective ground. 4.5 V ≤ V
DD1
≤ 5.5 V, 12.0 ≤ V
DDB
≤ 18.0 V. All min/max specifications apply over the
entire recommended operating range, unless otherwise noted. All typical specifications are at T
A
= 25°C, V
DD1
= 5.0 V, V
DDB
= 15 V.
Table 1.
Parameter Symbol Min Typ Max Unit Test Conditions
DC SPECIFICATIONS
Input Supply Current, Quiescent I
DD1(Q)
125 mA
I
ISO
= 0 mA, dc signal inputs,
V
ADJ
= open
Channel B Supply Current, Quiescent I
DDB(Q)
1.6 mA
Channel A Output Supply Voltage V
ISO
12 15 18.5 V
At 100 kHz Switching Frequency
Maximum Channel A Output Supply Current I
ISO(max, 100)
10 mA CL = 200 pF
Input Supply Current I
DD1
200 mA I
ISO
= I
ISO(max, 100)
Channel B Supply Current I
DDB
1.8 mA CL = 200 pF
At 1000 kHz Switching Frequency
Maximum Channel A Output Supply Current I
ISO(max, 1000)
7.5 mA CL = 200 pF
Input Supply Current I
DD1
200 mA I
ISO
= I
ISO(max, 1000)
Channel B Supply Current I
DDB
7.5 mA CL = 200 pF
Input Currents IIA, I
IB
−10 +0.01 +10 μA 0 ≤ VIA, VIB ≤ 5.5 V
Logic High Input Voltage V
ATH
, V
BTH
0.7 × V
DD1
V
Logic Low Input Voltage V
ATL
, V
BTL
0.3 × V
DD1
V
Logic High Output Voltages V
OAH
, V
OBH
V
ISO
– 0.1,
V
DDB
– 0.1
V
ISO
, V
DDB
V IOA, I
OB
= −1 mA
Logic Low Output Voltages V
OAL
, V
OBL
0.1 V IOA, I
OB
= 1 mA
Undervoltage Lockout, V
ISO
and V
DDB
Supply
Positive-Going Threshold V
DDBUV+
8.0 10.1 V
Negative-Going Threshold V
DDBUV−
7.4 9.0 V
Hysteresis V
DDBUVH
0.9 V
Undervoltage Lockout, V
DD1
Supply
Positive-Going Threshold V
DD1UV+
3.5 4.2 V
Negative-Going Threshold V
DD1UV−
3.0 3.9 V
Hysteresis V
DD1UVH
0.4 V
Output Short-Circuit Pulsed Current, Sourcing
1
I
OA
, IOB 100 mA
Output Short-Circuit Pulsed Current, Sinking
1
I
OA
, IOB 300 mA
SWITCHING SPECIFICATIONS
Minimum Pulse Width
2
PW 100 ns C
L
= 200 pF
Maximum Switching Frequency
3
1 MHz C
L
= 200 pF
Propagation Delay
4
t
PHL
, t
PLH
100 ns CL = 200 pF
Change vs. Temperature 100 ps/°C
Pulse Width Distortion, |t
PLH
− t
PHL
| PWD 8 ns CL = 200 pF
Channel-to-Channel Matching, Rising or Falling
Matching Edge Polarity
5
tM2 8 ns CL = 200 pF
Channel-to-Channel Matching, Rising vs. Falling
Opposite Edge Polarity
6
tM1 10 ns CL = 200 pF
Part-to-Part Matching, Rising or Falling Edges
7
55 ns C
L
= 200 pF
Part-to-Part Matching, Rising vs. Falling Edges
8
63 ns C
L
= 200 pF