Datasheet EVAL-ADE7169F16EB, ADUM5230ARWZ, ADUM5230, ADE7100 Datasheet (Analog Devices)

Isolated Half-Bridge Driver

with Integrated High-Side Supply

ADuM5230

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] ©2008 Analog Devices, Inc. All rights reserved.

FEATURES

Integrated, isolated high-side supply
150 mW of secondary side power
Isolated high-side and low-side outputs
100 mA output source current, 300 mA output sink current
High common-mode transient immunity: >25 kV/μs
High temperature operation: 105°C
Adjustable power level
Wide body 16-lead SOIC package
Safety and regulatory approvals (pending)

UL recognition: 2500 V rms for 1 minute per UL1577

APPLICATIONS

MOSFET/IGBT gate drive
Plasma display modules
Motor drives
Power supplies
Solar panel inverters

GENERAL DESCRIPTION

The ADuM52301 is an isolated half-bridge gate driver that
employs Analog Devices, Inc., iCoupler® technology to provide
independent and isolated high-side and low-side outputs.
Combining CMOS and microtransformer technologies, this
isolation component contains an integrated dc-to-dc converter
providing an isolated high-side supply. This eliminates the cost,
space, and performance difficulties associated with external
supply configurations such as a bootstrap circuitry. This high­side isolated supply powers not only the ADuM5230 high-side
output but also any external buffer circuitry used with the
ADuM5230.

In comparison to gate drivers employing high voltage level
translation methodologies, the ADuM5230 offers the benefit
of true, galvanic isolation between the input and each output.
Each output can operate up to ±700 V

P

relative to the input,
thereby supporting low-side switching to negative voltages.
The differential voltage between the high-side and low-side
may be as high as 700 V

P

.

1

Protected by U.S. Patents 5,952,849; 6,873,065; 6,903,578; 7,075,329; other

pending patents.

FUNCTIONAL BLOCK DIAGRAM

07080-001

V

DD1

7

V

DDB

10

GND

1

8

V

OB

9

V

DD1

3

GND

ISO

14

V

ADJ

4

NC

13

V

IA

5

NC

12

DECODE

ENCODE

V

IB

6

GND

B

11

DECODEENCODE

1

V

OA

16

GND

1

GND

1

2

V

ISO

15

ISOLATED

DC/DC

CONVERTER

╓
╜

╓
╜

╓
╜

╓
╜

NC = NO CONNECT

ADuM5230

Figure 1.

ADuM5230

Rev. 0 | Page 2 of 16

TABLE OF CONTENTS

Features .............................................................................................. 1

Applications ....................................................................................... 1 

General Description ......................................................................... 1

Functional Block Diagram .............................................................. 1

Revision History ............................................................................... 2

Specifications ..................................................................................... 3

Electrical Characteristics ............................................................. 3

Package Characteristics ............................................................... 5

Regulatory Information ............................................................... 5

Insulation and Safety-Related Specifications ............................ 5

Recommended Operating Conditions ...................................... 5

Absolute Maximum Ratings ............................................................ 6

ESD Caution .................................................................................. 6

Pin Configuration and Pin Function Descriptions ...................... 7

Typical Perfomance Characteristics ................................................8

Applications Information .............................................................. 10

Theory of Operation .................................................................. 10

PC Board Layout ........................................................................ 10

Thermal Analysis ....................................................................... 10

Propagation Delay-Related Parameters ................................... 11

DC Correctness and Magnetic Field Immunity ........................... 11

Power Consumption .................................................................. 12

Increasing and Decreasing Available Power ............................... 12

Common-Mode Transient Immunity ..................................... 12

Typical Application Usage ......................................................... 13

Insulation Lifetime ..................................................................... 13

Outline Dimensions ....................................................................... 15

Ordering Guide .......................................................................... 15

REVISION HISTORY

4/08—Revision 0: Initial Version

ADuM5230

Rev. 0 | Page 3 of 16

SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

All voltages are relative to their respective ground. 4.5 V ≤ V

DD1

≤ 5.5 V, 12.0 ≤ V

DDB

≤ 18.0 V. All min/max specifications apply over the

entire recommended operating range, unless otherwise noted. All typical specifications are at T

A

= 25°C, V

DD1

= 5.0 V, V

DDB

= 15 V.

Table 1.

Parameter Symbol Min Typ Max Unit Test Conditions

DC SPECIFICATIONS

Input Supply Current, Quiescent I

DD1(Q)

125 mA

I

ISO

= 0 mA, dc signal inputs,

V

ADJ

= open

Channel B Supply Current, Quiescent I

DDB(Q)

1.6 mA

Channel A Output Supply Voltage V

ISO

12 15 18.5 V

At 100 kHz Switching Frequency

Maximum Channel A Output Supply Current I

ISO(max, 100)

10 mA CL = 200 pF

Input Supply Current I

DD1

200 mA I

ISO

= I

ISO(max, 100)

Channel B Supply Current I

DDB

1.8 mA CL = 200 pF

At 1000 kHz Switching Frequency

Maximum Channel A Output Supply Current I

ISO(max, 1000)

7.5 mA CL = 200 pF

Input Supply Current I

DD1

200 mA I

ISO

= I

ISO(max, 1000)

Channel B Supply Current I

DDB

7.5 mA CL = 200 pF

Input Currents IIA, I

IB

−10 +0.01 +10 μA 0 ≤ VIA, VIB ≤ 5.5 V

Logic High Input Voltage V

ATH

, V

BTH

0.7 × V

DD1

V

Logic Low Input Voltage V

ATL

, V

BTL

0.3 × V

DD1

V

Logic High Output Voltages V

OAH

, V

OBH

V

ISO

– 0.1,

V

DDB

– 0.1

V

ISO

, V

DDB

V IOA, I

OB

= −1 mA

Logic Low Output Voltages V

OAL

, V

OBL

0.1 V IOA, I

OB

= 1 mA

Undervoltage Lockout, V

ISO

and V

DDB

Supply

Positive-Going Threshold V

DDBUV+

8.0 10.1 V

Negative-Going Threshold V

DDBUV−

7.4 9.0 V

Hysteresis V

DDBUVH

0.9 V

Undervoltage Lockout, V

DD1

Supply

Positive-Going Threshold V

DD1UV+

3.5 4.2 V

Negative-Going Threshold V

DD1UV−

3.0 3.9 V

Hysteresis V

DD1UVH

0.4 V

Output Short-Circuit Pulsed Current, Sourcing

1

I

OA

, IOB 100 mA

Output Short-Circuit Pulsed Current, Sinking

1

I

OA

, IOB 300 mA

SWITCHING SPECIFICATIONS

Minimum Pulse Width

2

PW 100 ns C

L

= 200 pF

Maximum Switching Frequency

3

1 MHz C

L

= 200 pF

Propagation Delay

4

t

PHL

, t

PLH

100 ns CL = 200 pF

Change vs. Temperature 100 ps/°C

Pulse Width Distortion, |t

PLH

− t

PHL

| PWD 8 ns CL = 200 pF

Channel-to-Channel Matching, Rising or Falling

Matching Edge Polarity

5

tM2 8 ns CL = 200 pF

Channel-to-Channel Matching, Rising vs. Falling

Opposite Edge Polarity

6

tM1 10 ns CL = 200 pF

Part-to-Part Matching, Rising or Falling Edges

7

55 ns C

L

= 200 pF

Part-to-Part Matching, Rising vs. Falling Edges

8

63 ns C

L

= 200 pF

ADuM5230

Rev. 0 | Page 4 of 16

Parameter Symbol Min Typ Max Unit Test Conditions

Common-Mode Transient Immunity

at Logic High Output

|CM

H

| 25 35 kV/μs

V

Ix

= V

DD1

, VCM = 1000 V,

transient magnitude = 800 V

Common-Mode Transient Immunity

at Logic Low Output

|CM

L

| 25 35 kV/μs

V

Ix

= 0 V, VCM = 1000 V,

transient magnitude = 800 V

Output Rise Time (10% to 90%) tR 25 ns

C

L

= 200 pF, I

ISO

= 10 mA,

100 kHz switching frequency

Output Fall Time (10% to 90%) tF 10 ns

C

L

= 200 pF, I

ISO

= 10 mA,

100 kHz switching frequency

1

Short-circuit duration is less than 1 sec. Average output current must conform to the limit shown under the section. Absolute Maximum Ratings

2

The minimum pulse width is the shortest pulse width at which the specified timing parameters are guaranteed. Operation below the minimum pulse width is strongly

discouraged because in some instances pulse stretching to 1 μs may occur.

3

The maximum switching frequency is the maximum signal frequency at which the specified timing and power conversion parameters are guaranteed. Operation

above the maximum frequency is strongly discouraged.

4

t

PHL

propagation delay is measured from the 50% level of the falling edge of the VIx signal to the 50% level of the falling edge of the VOx signal. t

PLH

propagation delay is

measured from the 50% level of the rising edge of the VIx signal to the 50% level of the rising edge of the VOx signal.

5

In channel-to-channel matching, the rising or falling matching edge polarity is the magnitude of the propagation delay difference between two channels of the same

part when both inputs are either both rising or falling edges. The loads on each channel are equal.

6

In channel-to-channel matching, the rising vs. falling opposite edge polarity is the magnitude of the propagation delay difference between two channels of the same

part when one input is a rising edge and one input is a falling edge. The loads on each channel are equal.

7

In part-to-part matching, the rising or falling edges is the magnitude of the propagation delay difference between the same channels of two different parts when the

inputs are either both rising or falling edges. The supply voltages, temperatures, and loads of each part are equal.

8

In part-to-part matching, the rising vs. falling edges is the magnitude of the propagation delay difference between the same channels of two different parts when one

input is a rising edge and the other input is a falling edge. The supply voltages, temperatures, and loads of each part are equal.

ADuM5230

Rev. 0 | Page 5 of 16

PACKAGE CHARACTERISTICS

Table 2.

Parameter Symbol Min Typ Max Unit Test Conditions

Resistance (Input-to-Output)

1

R

I-O

1012 Ω

Capacitance (Input-to-Output)

1

C

I-O

2.0 pF f = 1 MHz
Input Capacitance CI 4.0 pF
IC Junction-to-Ambient Thermal Resistance θJA 48 °C/W

1

The device is considered a two-terminal device: Pin 1 to Pin 8 are shorted together, and Pin 9 to Pin 16 are shorted together.

REGULATORY INFORMATION

The ADuM5230 will be approved by the organization listed in Tab l e 3.

Table 3.

UL1 (pending)

Recognized under 1577 component recognition program, File E214100

1

In accordance with UL1577, each ADuM5230 is proof-tested by applying an insulation test voltage ≥3000 V rms for 1 sec (current leakage detection limit = 5 μA).

INSULATION AND SAFETY-RELATED SPECIFICATIONS

Table 4.

Parameter Symbol Value Unit Conditions

Rated Dielectric Insulation Voltage

2500 V rms

1 minute duration

Minimum External Air Gap (Clearance)

L(I01) 3.5 min mm

Measured from input conductors to output conductors,
shortest distance through air

Minimum External Tracking (Creepage)

L(I02) 3.5 min mm

Measured from input conductors to output conductors,
shortest distance path along body

Minimum Internal Gap (Internal

Clearance)

0.017 min mm

Distance through the insulation

Tracking Resistance (Comparative

Tracking I ndex)

CTI >175

V

DIN IEC 112/VDE 0303 Part 1

Isolation Group

IIIa

Material Group (DIN VDE 0110, 1/89, Table 1)

600

500

400

300

200

100

0

–40 0 40 80 120 160 200

AMBIENT TEMPERATURE (°C)

SAFE OPERATING V

DD1

CURRENT (mA)

07080-010

Figure 2. Thermal Derating Curve, Dependence of Safety Limiting Values on

Case Temperature, per DIN EN 60747-5-2

RECOMMENDED OPERATING CONDITIONS

Table 5.

Parameter Value

Operating Temperature (TA) −40°C to +105°C
Input Supply Voltage1 (V

DD1

) 4.5 V to 5.5 V

Channel B Supply Voltage1 (V

DDB

) 12 V to 18.5 V
Input Signal Rise and Fall Times 1 ms
Minimum V

DD1

Power-On Slew Rate2 (P

SLEW

) 400 V/ms

1

All voltages are relative to their respective ground.

2

The ADuM5230 power supply may fail to initialize properly if V

DD1

is applied

too slowly.

ADuM5230

Rev. 0 | Page 6 of 16

ABSOLUTE MAXIMUM RATINGS

Ambient temperature = 25°C, unless otherwise noted.

Table 6.

Parameter Rating
Storage Temperature (TST) −55°C to +150°C
Ambient Operating Temperature (TA) −40°C to +105°C
Input Supply Voltage1 (V

DD1

) −0.5 V to +7.0 V

Channel B Supply Voltage1 (V

DDB

) −0.5 V to +27 V

Input Voltage1 (VIA, VIB) −0.5 V to V

DDI

+ 0.5 V

Output Voltage1 (VOA, VOB)

−0.5 V to V

ISO

+ 0.5 V,

−0.5 V to V

DDB

+ 0.5 V

Input-Output Voltage

2

−700 V

PEAK

to +700 V

PEAK

Output Differential Voltage

3

700 V

PEAK

Output DC Current (IOA, IOB) −20 mA to +20 mA
Common-Mode Transients

4

−100 kV/μs to +100 kV/μs

1

All voltages are relative to their respective ground.

2

Input-to-output voltage is defined as GND

ISO

− GND1 or GNDB − GND1.

3

Output differential voltage is defined as GND

ISO

− GNDB.

4

Refers to common-mode transients across any insulation barrier. Common-

mode transients exceeding the Absolute Maximum Ratings may cause
latch-up or permanent damage.

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.

ESD CAUTION

Table 7. Maximum Continuous Working Voltage

1

Parameter Max Unit Constraint

AC Voltage, Bipolar Waveform 424 V peak

50-year minimum lifetime

AC Voltage, Unipolar Waveform

Basic Insulation 600 V peak

50-year minimum lifetime

DC Voltage

Basic Insulation 600 V peak

50-year minimum lifetime

1

Refers to continuous voltage magnitude imposed across the isolation barrier. See the Insulation Lifetime section for more details.

ADuM5230

Rev. 0 | Page 7 of 16

PIN CONFIGURATION AND PIN FUNCTION DESCRIPTIONS

G

ND

1

1

V

DD1

2

V

ADJ

3

G

ND

1

4

V

OA

16

V

ISO

15

GND

ISO

14

NC

13

V

IA

5

NC

12

V

6

IB

GND

11

B

V

DD1

7

V

DDB

10

G

ND

1

8

V

OB

9

NC = NO CONNECT

ADuM5230

TOP VIEW

(Not to S cale)

07080-002

Figure 3. Pin Configuration

Table 8. Pin Function Descriptions

Pin No. Mnemonic Description

1 GND

1

Ground Reference for Input Logic Signals.

2 V

DD1

Input Supply Voltage, 4.5 V to 5.5 V.

3 V

ADJ

Adjusts Internal DC-to-DC Converter Duty Cycle (Normally Left Unconnected).

4 GND

1

Ground Reference for Input Logic Signals.

5 V

IA

Logic Input A.

6 V

IB

Logic Input B.

7 V

DD1

Input Supply Voltage, 4.5 V to 5.5 V.

8 GND

1

Ground Reference for Input Logic Signals.
9 VOB Output B Signal.
10 V

DDB

Output B Supply Voltage, 12 V to 18 V.

11 GND

B

Ground Reference for Output B Signal.
12 NC No Connect.
13 NC No Connect.
14 GND

ISO

Ground Reference for Output A Signal and Isolated Output Supply Voltage.
15 V

ISO

Isolated Output Supply Voltage.

16 VOA Output A Signal.

Table 9. Truth Table (Positive Logic)

VIA
Input

VIB
Input

V

DD1

State

1

V

ISO

State1V

DDB

State

1

VOA
Output

VOB
Output Notes

High High Powered Powered Powered High High
High Low Powered Powered Powered High Low
Low High Powered Powered Powered Low High
Low Low Powered Powered Powered Low Low
X X UVLO Unpowered X Low Low

Output returns to input state within 1 μs of V

DD1

power restoration.

X X Powered UVLO Unpowered Low Low

Output returns to input state within 1 μs of V

ISO

and V

DDB

power restoration.

X High Powered UVLO Powered Low High

Output returns to input state within 1 μs of V

ISO

power restoration.

X Low Powered UVLO Powered Low Low

Output returns to input state within 1 μs of V

ISO

power restoration.

High X Powered Powered UVLO High Low

V

OB

output returns to input state within 1 μs of

V

DDB

power restoration.

Low X Powered Powered UVLO Low Low

V

OB

output returns to input state within 1 μs of

V

DDB

power restoration.

1

UVLO represents either a voltage below the UVLO threshold for that supply or absence of power.

ADuM5230

Rev. 0 | Page 8 of 16

TYPICAL PERFOMANCE CHARACTERISTICS

20

19

18

17

16

15

14

13

12

11

10

0 5 10 15 20

I

ISO

LOAD CURRENT (mA)

V

ISO

(V)

07080-011

4.5V

5.0V

5.5V

Figure 4. Typical V

ISO

Supply Voltage vs. I

ISO

External Load Current

200

180

160

140

120

100

80

60

40

20

0

0 5 10 15 20

I

ISO

LOAD CURRENT (mA)

I

DD1

CURRENT (mA)

07080-012

4.5V

5.0V

5.5V

Figure 5. Typical V

DD1

Supply Current vs. V

ISO

External Load Current

30

25

20

15

10

5

0

0 5 10 15 20

I

ISO

LOAD CURRENT (mA)

EFFICIENCY (%)

07080-013

4.5V

5.0V

5.5V

Figure 6. Typical V

ISO

Supply Efficiency vs. V

ISO

External Load Current

14.0

13.5

13.0

12.5

12.0

11.5

11.0
–40 0 40 80 120

TEMPERATURE (° C)

V

ISO

@ MAXIMUM LOAD (V)

07080-014

V

ISO

@ 100kHz

V

ISO

@ 1MHz

Figure 7. Typical V

ISO

Output Voltage at Maximum Combined Load Over

Temperature

6

5

4

3

2

1

0

0 200 400 600 800 1000

FREQUENCY (kHz)

V

DDB

(mA)

07080-015

18V
15V
12V

Figure 8. Typical Current Consumption for VOA or VOB Outputs, CL = 200 pF

0

–0.5

–1.0

–1.5

–2.0

–2.5

–3.0

0 50 100 150 200

I

OH

(mA)

(

V

OH

–

V

DD

) OUTPUT VOLTAGE DRO P (V)

07080-016

Figure 9. Typical VOH Drop vs. IOH (V

DD1

= 5 V, V

DDB

, V

ISO

= 12 V to 18 V)

ADuM5230

Rev. 0 | Page 9 of 16

2.0

1.5

1.0

0.5

0

0 100 200 300 40 0

I

OL

(mA)

V

OL

OUTPUT VO LTAGE (V)

07080-017

Figure 10. Typical VOL vs. IOL (V

DD1

= 5 V, V

DDB

, V

ISO

= 12 V to 18 V)

70

68

66

64

62

60

–40 0 40 80 120

TEMPERATURE (°C)

PROPAGATI ON DELAY (n s)

07080-018

TPLH @ 18V
TP

HL

@ 18V

TP

LH

@ 12V

TP

HL

@ 12V

Figure 11. Typical Propagation Delay vs. Temperature

1600

1400

1200

1000

800

600

400

200

0

1 10 100 1000

LOAD IMPEDANCE ( Ω)

POWER DISSIPATION (mW)

07080-019

V

DD1

= 5.5V

V

DD1

= 4.5V

Figure 12. Power Dissipation vs. Load Impedance for Fault Conditions

40

35

30

25

20

15

10

5

0

0 2040608010

PWM DUTY FACTOR (%)

OUTPUT CURRENT (mA)

07080-020

0

V

ISO

= 15V

V

ISO

= 12V

Figure 13. Current Available at the Output vs. PWM Duty Factor for V

DD1

= 5 V

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0/10 1/9 2/8 3/7 4/6 5/ 5 6/4 7/3

UPPER/ LOWE R V

ADJ

RESISTOR VALUES (kΩ)

ON DUTY FACTO R

07080-021

V

DD1

= 5.0

Figure 14. Upper/Lower V

ADJ

Voltage Divider Resistor Values to Determine

PWM Duty Factor for V

DD1

= 5 V

ADuM5230

Rev. 0 | Page 10 of 16

APPLICATIONS INFORMATION

THEORY OF OPERATION

The dc-to-dc converter section of the ADuM5230 works on
principles that are common to most modern power supply
designs. It is implemented as an open-loop PWM controller,
which sets the power level being transferred to the secondary.
V

DD1

power is supplied to an oscillating circuit that switches
current into a chip-scale air core transformer. On the secondary
side, power is rectified to a dc voltage. The voltage is then
clamped to approximately 18 V and provided to the secondary
side V

OA

data channel and to the V

ISO

pin for external use. The

output voltage is unregulated and varies with load.

The PWM duty cycle is set by internal bias elements, but can be
controlled externally through the V

ADJ

pin with an external
resistor network. This feature allows the user to boost the
available power at the secondary, or reduce excess power if it is
not required for the application (see the Power Consumption
section).

Undervoltage lockouts are provided on the V

DD1

, V

DDB

, and V

ISO

supply lines to interlock the data channels from low supply
voltages.

PC BOARD LAYOUT

The ADuM5230 digital isolator with a 150 mW isoPower™
integrated dc-to-dc converter requires no external interface
circuitry for the logic interfaces. Power supply bypassing is
required at the input and output supply pins (see Figure 15).
The power supply section of the ADuM5230 uses a very high
oscillator frequency to pass power efficiently through its chip
scale transformers. In addition, the normal operation of the
data section of the iCoupler® introduces switching transients on
the power supply pins. Bypass capacitors are required for
several operating frequencies. Noise suppression requires a low
inductance high frequency capacitor; ripple suppression and
proper regulation require a large value capacitor. These are most
conveniently connected between Pin 1 and Pin 2 for V

DD1

and

between Pin 15 and Pin 14 for V

ISO

. To suppress noise and
reduce ripple, a parallel combination of at least two capacitors is
required. The recommended capacitor values are 0.1 µF and
10 µF. It is strongly recommended that a very low inductance
ceramic or equivalent capacitor be used for the smaller value.
The total lead length between both ends of the capacitor and
the input power supply pin should not exceed 20 mm.
Bypassing with noise suppression and stiffening capacitors is
recommended between Pin 1 and Pin 2, a bypass capacitor is
recommended between Pin 7 and Pin 8. Bypassing with noise
suppression and stiffening capacitors is recommended between
Pin 14 and Pin 15.

GND

1

V

DD1

V

ADJ

GND

1

V

OA

V

ISO

GND

ISO

NC

V

IA

NC

V

IB

GND

B

V

DD1

V

DDB

GND

1

V

OB

07080-022

NC = NO CONNECT

ADuM5230

TOP VIEW

(Not to S cale)

Figure 15. Recommended Printed Circuit Board Layout

In applications involving high common-mode transients, care
should be taken to ensure that board coupling across the isolation
barrier is minimized. Furthermore, the board layout should be
designed such that any coupling that does occur equally affects
all pins on a given component side. Failure to ensure this may
cause voltage differentials between pins exceeding the absolute
maximum ratings specified in Ta b l e 6, leading to latch-up
and/or permanent damage.

The ADuM5230 is a power device that dissipates about 1 W of
power when fully loaded and run at maximum speed. Because it
is not possible to apply a heat sink to an isolation device, the device
primarily depends on heat dissipation into the PCB through the
GND pins. If the device is used at high ambient temperatures,
care should be taken to provide a thermal path from the GND
pins to the PCB ground plane. The board layout in Figure 15
shows enlarged pads for Pin 1 and Pin 8. Multiple vias should
be implemented from the pad to the ground plane. This signifi­cantly reduces the temperatures inside the chip. The dimensions
of the expanded pads are left to the discretion of the designer
and the available board space.

THERMAL ANALYSIS

The ADuM5230 part consists of several internal die attached to
three lead frames, each with a die attach paddle. For the purposes
of thermal analysis, the device is treated as a thermal unit with
the highest junction temperature reflected in the θ

JA

parameter

shown in Tab l e 2. The value of θ

JA

is based on measurements
taken with the part mounted on a JEDEC standard four-layer
board with fine width traces and still air. Under normal operating
conditions, the ADuM5230 operates at full load across the full
temperature range without derating the output current.
However, following the recommendations in the PC Board
Layout section decreases the thermal resistance to the PCB,
allowing increased thermal margin in high ambient
temperatures.

Under output short-circuit conditions, as shown in Figure 12,
the package power dissipation is within safe operating limits;
however, if the load is in the 100  range, power dissipation is
high enough to cause thermal damage when the ambient tempera­ture is above 80°C. Care should be taken to avoid excessive
nonshort loads if the part is to be operated at high temperatures.

ADuM5230

Rev. 0 | Page 11 of 16

PROPAGATION DELAY-RELATED PARAMETERS

Propagation delay is a parameter that describes the time it takes
a logic signal to propagate through a component. The propagation
delay to a logic low output may differ from the propagation
delay to a logic high.

INPUT (

V

Ix

)

OUTPUT (V

Ox

)

t

PLH

t

PHL

50%

50%

07080-023

Figure 16. Propagation Delay Parameters

Pulse width distortion is the maximum difference between
these two propagation delay values and is an indication of how
accurately the input signal timing is preserved.

Channel-to-channel matching refers to the maximum amount
the propagation delay differs between channels within a single
ADuM5230 component.

DC CORRECTNESS AND MAGNETIC FIELD IMMUNITY

Positive and negative logic transitions at the isolator input
cause narrow (~1 ns) pulses to be sent to the decoder via the
transformer. The decoder is bistable and is, therefore, either set
or reset by the pulses, indicating input logic transitions. In the
absence of logic transitions at the input for more than 1 µs, a
periodic set of refresh pulses indicative of the correct input state
are sent to ensure dc correctness at the output. If the decoder
receives no internal pulses of more than about 5 µs, the input
side is assumed to be unpowered or nonfunctional, in which
case the isolator output is forced to a default state (see Tab l e 9 )
by the watchdog timer circuit.

The limitation on the ADuM5230 magnetic field immunity is set
by the condition in which induced voltage in the transformer
receiving coil is sufficiently large to either falsely set or reset the
decoder. The following analysis defines the conditions under
which this may occur.

The pulses at the transformer output have an amplitude greater
than 1.0 V. The decoder has a sensing threshold at about 0.5 V, thus
establishing a 0.5 V margin in which induced voltages can be
tolerated. The voltage induced across the receiving coil is given by

V =

(

; n = 1, 2, … , N

)

2π/

n

rdtd∑=

β

where:

β is magnetic flux density (gauss).
N is the number of turns in the receiving coil.
r

n

is the radius of the nth turn in the receiving coil (cm).

Given the geometry of the receiving coil in the ADuM5230 and
an imposed requirement that the induced voltage be at most
50% of the 0.5 V margin at the decoder, a maximum allowable
magnetic field is calculated, as shown in Figure 17.

MAGNETIC FIELD FREQUENCY (Hz)

100

MAXIMUM ALLOWABLE MAGNETIC FLUX

DENSITY (kgauss)

0.001
1M

10

0.01

1k 10k 10M

0.1

1

100M100k

07080-024

Figure 17. Maximum Allowable External Magnetic Flux Density

For example, at a magnetic field frequency of 1 MHz, the
maximum allowable magnetic field of 0.2 kgauss induces a
voltage of 0.25 V at the receiving coil. This is about 50% of the
sensing threshold and does not cause a faulty output transition.
Similarly, if such an event occurs during a transmitted pulse
(and was of the worst-case polarity), it would reduce the
received pulse from >1.0 V to 0.75 V, still well above the 0.5 V
sensing threshold of the decoder.

The preceding magnetic flux density values correspond to
specific current magnitudes at given distances from the
ADuM5230 transformers. Figure 18 expresses these allowable
current magnitudes as a function of frequency for selected
distances. As shown, the ADuM5230 is extremely immune and
can be affected only by extremely large currents operated at
high frequency very close to the component. For the 1 MHz
example noted, the user would have to place a 0.5 kA current
5 mm away from the ADuM5230 to affect the operation of the
component.

MAGNETIC F IELD FREQ UENCY (Hz)

MAXIMUM ALL OWABLE CURRENT (kA)

1000

100

10

1

0.1

0.01
1k 100M100k10k 1M 10M

DISTANCE = 5mm

DISTANCE = 1m

DISTANCE = 100mm

07080-025

Figure 18. Maximum Allowable Current

for Various Current-to-ADuM5230 Spacings

Note that at combinations of strong magnetic field and high
frequency, any loops formed by PCB traces may induce error
voltages sufficiently large enough to trigger the thresholds of

ADuM5230

Rev. 0 | Page 12 of 16

succeeding circuitry. Care should be taken in the layout of such
traces to avoid this possibility.

POWER CONSUMPTION

The power converter in the ADuM5230 provides 13 mA of
power to the secondary in its default configuration. Power is
provided to both the data channel, V

OA

, and the V

ISO

pin for off-

chip use. Current consumption of V

OA

varies with frequency as
shown in Figure 8. The maximum available power for external
use decreases as the frequency of the data channel increases to
stay within the total available current.

INCREASING AND DECREASING AVAILABLE POWER

The V

ADJ

pin is used to increase or decrease the available power

at the V

ISO

pin. This allows the increase of the V

ISO

voltage for a

given load or the increase of the maximum V

ISO

load. Alternatively,
power can also be reduced when it is not required at the output,
lowering the quiescent current and saving power.

Power adjustment is accomplished by adding a voltage divider
between V

ADJ

, V

DD1

and GND as shown in Figure 25. Under

normal operation, the V

ADJ

pin is left open, allowing the internal
bias network to set the duty factor of the internal PWM. If the
V

ADJ

pin is connected via a resistor divider, a duty factor other
than the default can be chosen. The relationship between the
duty factor of the internal PWM and the available power under

load is shown in Figure 13. When the desired duty factor is
chosen, the values of the upper and lower divider resistors can
be chosen as shown in Figure 14, which assumes a 10 kΩ total
divider resistance.

COMMON-MODE TRANSIENT IMMUNITY

In general, common-mode transients consist of linear and
sinusoidal components. The linear component of a common­mode transient is given by

V

CM, linear

= (V/t) t

where V/t is the slope of the transient shown in Figure 19
and Figure 20.

The transient of the linear component is given by

dV

CM

/dt = V/t

The ability of the ADuM5230 to operate correctly in the
presence of linear transients is characterized by the data in
Figure 22. The data is based on design simulation and is the
maximum linear transient magnitude that the ADuM5230 can
tolerate without an operational error. This data shows a higher
level of robustness than what is shown in Ta b le 1 because the
transient immunity values obtained in Tabl e 1 use measured
data and apply allowances for measurement error and margin.

GND

1

V

DD1

ΔV

Δt

ΔV

Δt

5V

GND

1

V

DD1

15V

15V

GND

ISO

AND GND

B

V

ISO

AND V

DDB

5V

GND

ISO

AND GND

B

V

ISO

AND V

DDB

15V

15V

07080-006

Figure 19. Common-Mode Transient Immunity Waveforms—Input to Output

GNDB/GND

B

V

ISO/VDDB

ΔV

Δt

ΔV

Δt

15V

GNDB/GND

B

V

ISO/VDDB

15V

15V

GND

ISO

/GND

B

V

ISO/VDDB

15V

GND

ISO

/GND

B

V

ISO/VDDB

15V

15V

07080-007

Figure 20. Common-Mode Transient Immunity Waveforms—Between Outputs

GND

ISO

/GND

B

V

ISO/VDDB

V

ISO/VDDB

GND

ISO

/GND

B

07080-008

ΔV

DD

Δt

Figure 21. Transient Immunity Waveforms—Output Supplies

ADuM5230

Rev. 0 | Page 13 of 16

07080-003

TEMPERATURE (°C )

100–40 0 40 80–20 20 60

TRANSIENT I MMUNITY (kV/µs)

300

250

200

150

100

50

0

WORST-CASE PROCESS VARIATION

BEST-CASE PROCESS VARIATION

Figure 22. Transient Immunity (Linear Transients) vs. Temperature

The sinusoidal component (at a given frequency) is given by

V

CM, sinusoidal

= V0sin(2πft)

where:

V

0

is the magnitude of the sinusoidal.

f is the frequency of the sinusoidal.

The transient magnitude of the sinusoidal component is given by

dV

CM

/dt = 2πf V

0

The ability of the ADuM5230 to operate correctly in the pres­ence of sinusoidal transients is characterized by the data in
Figure 23 and Figure 24. The data is based on design simulation
and is the maximum sinusoidal transient magnitude (2πf V

0

)
that the ADuM5230 can tolerate without an operational error.
Values for immunity against sinusoidal transients are not
included in Tabl e 1 because measurements to obtain such values
have not been possible.

07080-004

FREQUENCY ( MHz)

20000 500 1000 1500 1750250 750 1250

TRANSIENT I MMUNITY (kV/µs)

200

160

180

120

80

40

140

100

60

20

0

WORST-CASE PROCESS VARIATION

BEST-CASE PROCESS VARIATION

Figure 23. Transient Immunity (Sinusoidal Transients),

27°C Ambient Temperature

07080-005

FREQUENCY ( MHz)

20000 500 1000 1500 1750250 750 1250

TRANSIENT IMMUNITY (kV/µs)

200

140

100

60

20

160

180

120

80

40

0

WORST-CASE PROCESS VARIATION

BEST-CASE PROCESS VARIATION

Figure 24. Transient Immunity (Sinusoidal Transients),

100°C Ambient Temperature

TYPICAL APPLICATION USAGE

The ADuM5230 is intended for driving low gate capacitance
transistors (200 pF typically). Most high voltage applications
involve larger transistors than this. To accommodate these
applications, users can implement a buffer configuration with
the ADuM5230, as shown in Figure 25. In many cases, the
buffer configuration is the least expensive option and provides
the greatest amount of design flexibility. The precise buffer/high
voltage transistor combination can be selected to fit the needs of
the application.

07080-009

+H

V

–HV

GND

1

V

DD1

V

ADJ

V

IA

V

ISO

V

OA

GND

ISO

V

DDB

V

OB

GND

B

V

IB

ADuM5230

FLOATING V

DDB

R

UPPER

R

LOWER

Figure 25. Application Circuit

INSULATION LIFETIME

All insulation structures eventually break down when subjected
to voltage stress over a sufficiently long period. The rate of
insulation degradation depends on the characteristics of the
voltage waveform applied across the insulation. In addition to
the testing performed by the regulatory agencies, Analog
Devices conducts an extensive set of evaluations to determine
the lifetime of the insulation structure within the ADuM5230.

Analog Devices performs accelerated life testing using voltage
levels higher than the rated continuous working voltage.
Acceleration factors for several operating conditions are
determined. These factors allow calculation of the time to
failure at the actual working voltage. Tabl e 7 summarizes the
peak voltages for 50 years of service life for a bipolar ac
operating condition and the maximum Analog Devices

ADuM5230

Rev. 0 | Page 14 of 16

0V

RATED PEAK VOLTAGE

07080-026

recommended working voltages. In many cases, the approved
working voltage is higher than the 50-year service life voltage.
Operation at these high working voltages can lead to shortened
insulation life in some cases.

Figure 26. Bipolar AC Waveform

The insulation lifetime of the ADuM5230 depends on the
voltage waveform type imposed across the isolation barrier.
The iCoupler insulation structure degrades at different rates
depending on whether the waveform is bipolar ac, unipolar ac,
or dc. Figure 26, Figure 27, and Figure 28 illustrate these
different isolation voltage waveforms.

0V

RATED PEAK VOLTAGE

07080-027

Figure 27. Unipolar AC Waveform

Bipolar ac voltage is the most stringent environment. The goal
of a 50-year operating lifetime under the ac bipolar condition
determines the maximum working voltage recommended by
Analog Devices.

0V

RATED PEAK VOLTAGE

07080-028

In the case of unipolar ac or dc voltage, the stress on the insu­lation is significantly lower. This allows operation at higher
working voltages while still achieving a 50-year service life.
The working voltages listed in Tab l e 7 can be applied while
maintaining the 50-year minimum lifetime, provided the
voltage conforms to either the unipolar ac or dc voltage cases.
Any cross insulation voltage waveform that does not conform to
Figure 27 or Figure 28 should be treated as a bipolar ac waveform,
and its peak voltage should be limited to the 50-year lifetime
voltage value listed in Tab l e 7. Note that the voltage presented in
Figure 27 is shown as sinusoidal for illustration purposes only.
It is meant to represent any voltage waveform varying between
0 V and some limiting value. The limiting value can be positive
or negative, but the voltage cannot cross 0 V.

Figure 28. DC Waveform

ADuM5230

Rev. 0 | Page 15 of 16

OUTLINE DIMENSIONS

CONTROLL ING DIMENSI ONS ARE IN MILLIMET ERS; INCH DIM ENSIONS
(IN PARENTHESES) ARE ROUNDED-O FF MILLIMETER EQ UIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRI ATE FOR USE IN DESI GN.

COMPLIANT TO JEDEC STANDARDS MS-013- AA

032707-B

10.50 (0.4134)

10.10 (0.3976)

0.30 (0.0 118)

0.10 (0.0039)

2.65 (0.1043)

2.35 (0.0925)

10.65 (0.4193)

10.00 (0.3937)

7.60 (0.2992)

7.40 (0.2913)

0

.

7

5

(

0

.

0

2

9

5

)

0

.

2

5

(

0

.

0

0

9

8

)

45°

1.27 (0.0500)

0.40 (0.0157)

C

OPLANARITY

0.10

0.33 (0.0130)

0.20 (0.0079)

0.51 (0.0201)

0.31 (0.0122)

SEATING
PLANE

8°
0°

16

9

8

1

1.27 (0.0500)
BSC

Figure 29. 16-Lead Standard Small Outline Package [SOIC_W]

Wide Body

(RW-16)

Dimensions shown in millimeters (inches)

ORDERING GUIDE

Model

No. of
Channels

Output Peak
Current (A)

1

Output
Voltage (V) Temperature Range Package Description

Package
Option

ADuM5230ARWZ

2

2 0.1/0.3 15 −40°C to +105°C 16-Lead SOIC_W RW-16

ADuM5230ARWZ-RL

2

2 0.1/0.3 15 −40°C to +105°C

16-Lead SOIC_W, 13-inch Tape
and Reel Option (1,000 Units)

RW-16

1

Sourcing/sinking.

2

Z = RoHS Compliant Part.

ADuM5230

Rev. 0 | Page 16 of 16

NOTES

©2008 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D07080-0-4/08(0)