Dual 14-bit, 2-channel ADC
True Bipolar Analog Inputs
Programmable Input Ranges
±10, ±5, 0 to 10 V
Throughput rate: 1 MSPS
Simultaneous conversion with read in 1μs
Specified for V
Low current consumption: 5.65 mA max
Wide input bandwidth
14 bits No Missing Codes
On-chip reference: 2.5 V
–40°C to +85°C operation
High speed serial interface
SPI®/QSPI™/MICROWIRE™/DSP compatible
TM
iCMOS
24-lead TSSOP package
For 12 bit version see AD7366
GENERAL DESCRIPTION
of 5 V±5%
CC
Process Technology
1μs, 14-Bit, 2-Channel SAR ADC
AD7367
FUNCTIONAL BLOCK DIAGRAM
The AD73671 is a dual, 14-bit, high speed, low power, successive
approximation ADC that features throughput rates up to 1
MSPS. The device contains two ADCs, each preceded by a 2channel multiplexer, and a low noise, wide bandwidth trackand-hold amplifier that can handle input frequencies in excess
of 10 MHz.
Table 1.Related Products
Device
Resolution Throughput
Number
Figure 1
Rate
Number of
Channels
The AD7367 is fabricated on Analog Devices’ Industrial CMOS
process, iCMOS, a technology platform combining the
advantages of low and high voltage CMOS, bipolar and high
voltage DMOS processes. The process allows the AD7367 to
accept high voltage bipolar signals in addition to reducing
AD7366 12-Bit 1 MSPS Dual, 2-ch
AD7366-5 12-Bit 500 KSPS Dual, 2-ch
AD7367-5 14-Bit 500 KSPS Dual, 2-ch
power consumption and package size.
The AD7367 can accept true bipolar analog input signals in the
±10 V range, ±5 V range and 0 to 10 V range.
The AD7367 has an on-chip 2.5 V reference that can be
overdriven if an external reference is preferred. The AD7367 is
available in a 24-lead TSSOP package.
1
Protected by U.S. Patent No. 6,681,332.
TM
iCMOS
Process Technology
For analog systems designers within industrial/instrumentation equipment OEMs who need high performance ICs at higher-voltage levels, iCMOS is a technology
platform that enables the development of analog ICs capable of 30V and operating at +/- 15V supplies while allowing dramatic reductions in power consumption and
package size, and increased AC and DC performance.
Rev. PrD
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Sample tested during initial release to ensure compliance.
4
Refers to pins V
REF
A or V
REF
4
2.5 2.5 V ±0.2% max @ 25°C
External reference applied to Pin
A/Pin V
V
REF
0.7× V
INH
0.8 V max
INL
3
IN
3
10 Ω
RMS
V min
DRIVE
5 pF typ
− 0.2 V
DRIVE
3
10 pF
140 ns Full-scale step input;
4.75 5.25 V See Table 6
+11.5 +16.5 V See Table 6
-16.5 -11.5 V See Table 6
B.
REF
DRIVE
DRIVE
B
DRIVE
≤5.25V, f
<4.75V , f
DRIVE
= 48MHz
SCLK
= 35MHz
SCLK
Rev. PrD | Page 4 of 16
AD7367 Preliminary Technical Data
TIMING SPECIFICATIONS
AVCC = DVCC =4.75 V to 5.25 V, VDD = 11.5V to 16.5 V, VSS = −11.5V to −16.5 V, V
otherwise noted
1
.
Table 3.
, T
Parameter Limit at T
2.7V≤V
t
CONVER T
680 680 ns max
<4.75V 4.75V≤V
DRIVE
MIN
Unit Test Conditions / Comments
MAX
≤5.25V
DRIVE
Conversion time, Internal clock. CONVST
edge
f
SCLK
35 48
10 10 kHz min Frequency of serial read clock.
MHz
max
t
30 30 ns min
QUIET
Minimum quiet time required between end of serial read and start of
next conversion
t1 10 10 ns min
t
2
t
3
5 5 ns min
0 0 ns min
Minimum CONVST
CONVST
falling edge to BUSY rising edge.
BUSY falling edge to MSB valid once CS is low for t4 prior to BUSY going
Low
t
4
10 10 ns max
Delay from CS
disabled
2
t
5
20 14 ns max Data access time after SCLK falling edge
t6 5 5 ns min SCLK to data valid hold time
t7 0.1 t
t8 0.1 t
t
9
t
10
10 10 ns max
5 5 ns min SCLK falling edge to DOUTA, DOUTB, high impedance
SCLK
0.1 t
SCLK
0.1 t
SCLK
ns min SCLK high pulse width
SCLK
ns min SCLK low pulse width
rising edge to DOUTA, DOUTB, high impedance
CS
10 10 ns max SCLK falling edge to DOUTA, DOUTB, high impedance
t
POWER-UP
70 70 μs
Power up time from shutdown mode. Time required between CONVST
rising edge and CONVST falling edge.
1
Sample tested during initial release to ensure compliance. All input signals are specified with tr = tf = 5 ns (10% to 90% of VDD) and timed from a voltage level of 1.6 V.
All timing specifications given are with a 25 pF load capacitance. With a load capacitance greater than this value, a digital buffer or latch must be used. See
Terminology section and Figure 9.
2
The time required for the output to cross 0.4 V or 2.4 V.
= 2.7 V to 5.25V, TA = T
DRIVE
MIN
to T
MAX
, unless
falling edge to BUSY falling
Low pulse.
falling edge until DOUTA and DOUTB are three-state
Rev. PrD | Page 5 of 16
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