The ADT70 provides excitation and signal conditioning for
resistance-temperature devices (RTDs). It is ideally suited for
1 kΩ Platinum RTDs (PRTDs), allowing a very wide range of
temperature measurement. It can also easily interface to 100 Ω
PRTDs. Using a remote, low cost thin-film PRTD, the ADT70
can measure temperature in the range of –50°C to +500°C.
With high performance platinum elements, the temperature
change can be extended to 1000°C. Accuracy of the ADT70
and PRTD system over a –200°C to +1000°C temperature
range heavily depends on the quality of the PRTD. Typically
the ADT70 will introduce an error of only ±1°C over the
transducer's temperature range, and the error may be trimmed
to zero at a single calibration point.
The ADT70 consists of two matched 1 mA (nominal) current
sources for transducer and reference resistor excitation, a precision rail-to-rail output instrumentation amplifier, a 2.5 V reference and an uncommitted rail-to-rail output op amp. The
ADT70 includes a shutdown function for battery powered
equipment, which reduces the quiescent current from 4 mA to
less than 10␣ µA. The ADT70 operates from either single +5 V
or ±5 V supplies. Gain or full-scale range for the PRTD and
ADT70 system is set by a precision external resistor connected
to the instrumentation amplifier. The uncommitted op amp may
be used for scaling the internal voltage reference, providing a
“PRTD open” signal or “over-temperature” warning, a heater
switching signal, or other external conditioning determined by
the user.
The ADT70 is specified for operation from ⴚ40°C to ⴙ125°C
and is available in 20-lead DIP and SO packages.
Patent pending.
*
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
FEATURES
PRTD Temperature Measurement Range
Typical IC Measurement Error ⴞ1ⴗC
Includes Two Matched Current Sources
Rail-to-Rail Output Instrumentation Amp
Uncommitted, Rail-to-Rail Output Op Amp
On-Board ⴙ2.5 V Reference
Temperature Coefficient ⴞ25 ppm/ⴗCⴙ5 V or ⴞ5 V Operation
Supply Current 4 mA Max
10 A Max in Shutdown
APPLICATIONS
Temperature Controllers
Portable Instrumentation
Temperature Acquisition Cards
N, R Package . . . . . . . . . . . . . . . . . . . . . . ⴚ65°C to ⴙ150°C
Operating Temperature Range . . . . . . . . . . ⴚ40°C to ⴙ125°C
Junction Temperature Range
ModelRangePackage
ADT70GRⴚ40°C to ⴙ125°C20-Lead SOIC
ADT70GNⴚ40°C to ⴙ125°C20-Lead PDIP
Temperature
N, R Package . . . . . . . . . . . . . . . . . . . . . . ⴚ65°C to ⴙ125°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . ⴙ300°C
NOTE
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
is specified for device in socket/soldered on circuit board (worst case conditions).
JA
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADT70 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
REV. 0–3–
ADT70
5
4.5VS = +5V, NO LOAD
4
3.5
3
2.5
2
1.5
SUPPLY CURRENT – mA
1
0.5
0
225
2575125
TEMPERATURE – 8C
Figure 1. Supply Current vs. Temperature
1.4
VS = +5V, NO LOAD
1.35
1.3
SYSTEM GAIN – mV/V
1.25
1.2
225
2575125
TEMPERATURE – 8C
Figure 2. System Gain vs. Temperature
100
80
VS = +5V, NO LOAD
60
40
20
0
220
240
OFFSET VOLTAGE – mV
260
INSTRUMENTATION AMPLIFIER INPUT
280
2100
225
2575125
TEMPERATURE – 8C
Figure 4. Instrumentation Amplifier Input Offset Voltage
vs. Temperature
10
8
VS = +5V, NO LOAD
6
4
2
0
22
24
OFFSET VOLTAGE – mV
26
28
INSTRUMENTATION AMPLIFIER OUTPUT
210
225
2575125
TEMPERATURE – 8C
Figure 5. Instrumentation Amplifier Output Offset Voltage
vs. Temperature
0.1
0.08
VS = +5V, NO LOAD
0.06
0.04
0.02
0
20.02
20.04
SYSTEM GAIN PSRR – %/V
20.06
20.08
20.1
225
2575125
TEMPERATURE – 8C
Figure 3. Total System Gain PSRR vs. Temperature
0
VS = +5V, NO LOAD
210
220
230
240
BIAS CURRENT – nA
250
260
INSTRUMENTATION AMPLIFIER INPUT
270
225
2575125
TEMPERATURE – 8C
Figure 6. Instrumentation Amplifier Input Bias Current vs.
Temperature
REV. 0–4–
ADT70
500
400
VS = +5V, NO LOAD
300
200
100
0
2100
2200
OFFSET CURRENT – pA
2300
INSTRUMENTATION AMPLIFIER INPUT
2400
2500
225
2575125
TEMPERATURE – 8C
Figure 7. Instrumentation Amplifier Input Offset Current
vs. Temperature
1.6
VS = +5V, NO LOAD
1.55
1.5
0
VS = +5V, NO LOAD
210
220
230
240
250
OP AMP INPUT BIAS CURRENT – nA
260
270
225
2575125
TEMPERATURE – 8C
Figure 10. Op Amp Input Bias Current vs. Temperature
500
VS = +5V, NO LOAD
400
300
200
1.45
INSTRUMENTATION AMPLIFIER GAIN – V/V
1.4
225
2575125
TEMPERATURE – 8C
Figure 8. Instrumentation Amplifier Gain vs. Temperature
100
80
VS = +5V, NO LOAD
60
40
20
0
220
240
260
OP AMP INPUT OFFSET VOLTAGE – mV
280
2100
225
2575125
TEMPERATURE – 8C
Figure 9. Op Amp Input Offset Voltage vs. Temperature
100
OP AMP INPUT OFFSET CURRENT – pA
0
225
2575125
TEMPERATURE – 8C
Figure 11. Op Amp Input Offset Current vs. Temperature
2.51
VS = +5V, NO LOAD
2.505
2.5
2.495
REFERENCE VOLTAGE – V
2.49
225
2575125
TEMPERATURE – 8C
Figure 12. Reference Voltage vs. Temperature
REV. 0–5–
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