B grade: 3 ppm/°C
Low dropout operation: 500 mV
Input range: (V
High output source and sink current
+10 mA and −5 mA, respectively
Wide temperature range: −40°C to +125°C
APPLICATIONS
Precision data acquisition systems
High resolution data converters
Battery-powered instrumentation
Portable medical instruments
Industrial process control systems
Precision instruments
Optical control circuits
+ 500 mV) to 18 V
OUT
ADR440/ADR441/ADR443/ADR444/ADR445
PIN CONFIGURATIONS
ADR440/
TP
1
ADR441/
2
ADR443/
V
IN
ADR444/
NC
3
ADR445
TOP VIEW
4
GND
(Not to Scale)
NOTES
1. NC = NO CONNECT
2. TP = TEST P IN (DO NOT CO NNECT)
Figure 1. 8-Lead SOIC_N (R-Suffix)
ADR440/
1
TP
ADR441/
ADR443/
V
2
IN
ADR444/
3
NC
ADR445
GND
NOTES
1. NC = NO CONNECT
2. TP = TEST P IN (DO NOT CONNECT)
Figure 2. 8-Lead MSOP (RM-Suffix)
TOP VIEW
4
(Not to S cal e)
TP
8
7
NC
V
6
OUT
5
TRIM
05428-001
8
TP
NC
7
6
V
OUT
TRIM
5
05428-002
GENERAL DESCRIPTION
The ADR44x series is a family of XFET® voltage references
featuring ultralow noise, high accuracy, and low temperature
drift performance. Using Analog Devices, Inc., patented
temperature drift curvature correction and XFET (eXtra
implanted junction FET) technology, voltage change vs.
temperature nonlinearity in the ADR44x is greatly minimized.
The XFET references offer better noise performance than
buried Zener references, and XFET references operate off
low supply voltage headroom (0.5 V). This combination of
features makes the ADR44x family ideally suited for precision
signal conversion applications in high-end data acquisition
systems, optical networks, and medical applications.
The ADR44x family has the capability to source up to 10 mA of
output current and sink up to −5 mA. It also comes with a trim
terminal to adjust the output voltage over a 0.5% range without
compromising performance.
Rev. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Offered in two electrical grades, the ADR44x family is available in 8-lead MSOP and narrow SOIC packages. All versions
are specified over the extended industrial temperature range of
Changes to Ordering Guide.......................................................... 19
10/05—Revision 0: Initial Version
Rev. E | Page 2 of 20
Page 3
ADR440/ADR441/ADR443/ADR444/ADR445
SPECIFICATIONS
ADR440 ELECTRICAL CHARACTERISTICS
VIN = 3 V to 18 V, TA = 25°C, CIN = C
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade
B Grade
INITIAL ACCURACY V
A Grade
0.15 %
B Grade 1 mV
0.05 %
TEMPERATURE DRIFT TCVO
A Grade −40°C < TA < +125°C 2 10 ppm/°C
B Grade −40°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ΔVO/ΔVIN −40°C < TA < +125°C −20 +10 +20 ppm/V
LOAD REGULATION ΔVO/ΔI
ΔVO/ΔI
QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 3 3.75 mA
VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 1 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 45 nV/√Hz
TURN-ON SETTLING TIME tR 10 μs
LONG-TERM STABILITY1 V
OUTPUT VOLTAGE HYSTERESIS V
RIPPLE REJECTION RATIO RRR fIN = 1 kHz −80 dB
SHORT CIRCUIT TO GND ISC 27 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 3 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 500 mV
1
The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.
= 0.1 µF, unless otherwise noted.
OUT
OERR
LOAD
2.045 2.048 2.051 V
2.047 2.048 2.049 V
3 mV
= 0 mA to 10 mA, VIN = 3.5 V,
I
LOAD
−40°C < T
LOAD
= 0 mA to −5 mA, VIN = 3.5 V,
I
LOAD
−40°C < T
1000 hours 50 ppm
O
70 ppm
O_HYS
< +125°C
A
< +125°C
A
−50 +50 ppm/mA
−50 +50 ppm/mA
Rev. E | Page 3 of 20
Page 4
ADR440/ADR441/ADR443/ADR444/ADR445
ADR441 ELECTRICAL CHARACTERISTICS
VIN = 3 V to 18 V, TA = 25°C, CIN = C
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade
B Grade
INITIAL ACCURACY V
A Grade
0.12 %
B Grade 1 mV
0.04 %
TEMPERATURE DRIFT TCVO
A Grade −40°C < TA < +125°C 2 10 ppm/°C
B Grade −40°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ΔVO/ΔVIN −40°C < TA < +125°C 10 20 ppm/V
LOAD REGULATION ΔVO/ΔI
ΔVO/ΔI
QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 3 3.75 mA
VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 1.2 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 48 nV/√Hz
TURN-ON SETTLING TIME tR 10 μs
LONG-TERM STABILITY1 V
OUTPUT VOLTAGE HYSTERESIS V
RIPPLE REJECTION RATIO RRR fIN = 1 kHz −80 dB
SHORT CIRCUIT TO GND ISC 27 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 3 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 500 mV
1
The long-term stability specification is noncumulative. The drift in subsequent 1000-hour period is significantly lower than in the first 1000-hour period.
= 0.1 µF, unless otherwise noted.
OUT
OERR
LOAD
2.497 2.500 2.503 V
2.499 2.500 2.501 V
3 mV
= 0 mA to 10 mA, VIN = 4 V,
I
LOAD
−40°C < T
LOAD
= 0 mA to −5 mA, VIN = 4 V,
I
LOAD
−40°C < T
1000 hours 50 ppm
O
70 ppm
O_HYS
< +125°C
A
< +125°C
A
−50 +50 ppm/mA
−50 +50 ppm/mA
Rev. E | Page 4 of 20
Page 5
ADR440/ADR441/ADR443/ADR444/ADR445
ADR443 ELECTRICAL CHARACTERISTICS
VIN = 3.5 V to 18 V, TA = 25°C, CIN = C
Table 4.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade
B Grade
INITIAL ACCURACY V
A Grade
0.13 %
B Grade 1.2 mV
0.04 %
TEMPERATURE DRIFT TCVO
A Grade −40°C < TA < +125°C 2 10 ppm/°C
B Grade −40°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ΔVO/ΔVIN −40°C < TA < +125°C 10 20 ppm/V
LOAD REGULATION ΔVO/ΔI
ΔVO/ΔI
QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 3 3.75 mA
VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 1.4 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 57.6 nV/√Hz
TURN-ON SETTLING TIME tR 10 μs
LONG-TERM STABILITY1 V
OUTPUT VOLTAGE HYSTERESIS V
RIPPLE REJECTION RATIO RRR fIN = 1 kHz −80 dB
SHORT CIRCUIT TO GND ISC 27 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 3.5 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 500 mV
1
The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.
= 0.1 µF, unless otherwise noted.
OUT
OERR
LOAD
2.996 3.000 3.004 V
2.9988 3.000 3.0012 V
4 mV
= 0 mA to 10 mA, VIN = 5 V,
I
LOAD
−40°C < T
LOAD
= 0 mA to −5 mA, VIN = 5 V,
I
LOAD
−40°C < T
1000 hours 50 ppm
O
70 ppm
O_HYS
< +125°C
A
< +125°C
A
−50 +50 ppm/mA
−50 +50 ppm/mA
Rev. E | Page 5 of 20
Page 6
ADR440/ADR441/ADR443/ADR444/ADR445
ADR444 ELECTRICAL CHARACTERISTICS
VIN = 4.6 V to 18 V, TA = 25°C, CIN = C
Table 5.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade
B Grade
INITIAL ACCURACY V
A Grade
0.13 %
B Grade 1.6 mV
0.04 %
TEMPERATURE DRIFT TCVO
A Grade −40°C < TA < +125°C 2 10 ppm/°C
B Grade −40°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ΔVO/ΔVIN −40°C < TA < +125°C 10 20 ppm/V
LOAD REGULATION ΔVO/ΔI
ΔVO/ΔI
QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 3 3.75 mA
VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 1.8 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 78.6 nV/√Hz
TURN-ON SETTLING TIME tR 10 μs
LONG-TERM STABILITY1 V
OUTPUT VOLTAGE HYSTERESIS V
RIPPLE REJECTION RATIO RRR fIN = 1 kHz −80 dB
SHORT CIRCUIT TO GND ISC 27 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 4.6 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 500 mV
1
The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.
= 0.1 µF, unless otherwise noted.
OUT
OERR
1000 hours 50 ppm
O
70 ppm
O_HYS
4.091 4.096 4.101 V
4.0944 4.096 4.0976 V
5 mV
LOAD
LOAD
= 0 mA to 10 mA, VIN = 5.5 V,
I
LOAD
−40°C < T
I
LOAD
−40°C < T
< +125°C
A
= 0 mA to −5 mA, VIN = 5.5 V,
< +125°C
A
−50 +50 ppm/mA
−50 +50 ppm/mA
Rev. E | Page 6 of 20
Page 7
ADR440/ADR441/ADR443/ADR444/ADR445
ADR445 ELECTRICAL CHARACTERISTICS
VIN = 5.5 V to 18 V, TA = 25°C, CIN = C
Table 6.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade
B Grade
INITIAL ACCURACY V
A Grade
0.12 %
B Grade 2 mV
0.04 %
TEMPERATURE DRIFT TCVO
A Grade −40°C < TA < +125°C 2 10 ppm/°C
B Grade −40°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ΔVO/ΔVIN −40°C < TA < +125°C 10 20 ppm/V
LOAD REGULATION ΔVO/ΔI
ΔVO/ΔI
QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 3 3.75 mA
VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 2.25 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 90 nV/√Hz
TURN-ON SETTLING TIME tR 10 μs
LONG-TERM STABILITY1 V
OUTPUT VOLTAGE HYSTERESIS V
RIPPLE REJECTION RATIO RRR fIN = 1 kHz –80 dB
SHORT CIRCUIT TO GND ISC 27 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 5.5 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 500 mV
1
The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.
= 0.1 µF, unless otherwise noted.
OUT
OERR
LOAD
4.994 5.000 5.006 V
4.998 5.000 5.002 V
6 mV
= 0 mA to 10 mA, VIN = 6.5 V,
I
LOAD
−40°C < T
LOAD
= 0 mA to −5 mA, VIN = 6.5 V,
I
LOAD
−40°C < T
1000 hours 50 ppm
O
70 ppm
O_HYS
< +125°C
A
< +125°C
A
−50 +50 ppm/mA
−50 +50 ppm/mA
Rev. E | Page 7 of 20
Page 8
ADR440/ADR441/ADR443/ADR444/ADR445
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 7.
Parameter Rating
Supply Voltage 20 V
Output Short-Circuit Duration to GND Indefinite
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +125°C
Junction Temperature Range −65°C to +150°C
Lead Temperature, Soldering (60 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Figure 10. ADR445 Supply Current vs. Input Voltage
8
6
TION (ppm/V)
4
LINE REGUL
2
05428-007
0
–405–10–25503520110958065125
TEMPERATURE (°C)
05428-010
Figure 12. ADR441 Line Regulation vs. Temperature
60
I
= 0mA TO 10mA
LOAD
55
VIN = 18V
50
TION (ppm/mA)
45
VIN = 6V
40
LOAD REGUL
35
05428-008
30
–405–10–25503520110958065125
TEMPERATURE (°C)
05428-011
Figure 13. ADR441 Load Regulation vs. Temperature
3.25
3.15
3.05
2.95
SUPPLY CURRENT (mA)
2.85
2.75
–405–10–25503520110958065125
TEMPERATURE (°C)
Figure 11. ADR445 Supply Current vs. Temperature
05428-009
Rev. E | Page 10 of 20
7
6
5
4
3
2
LINE REGUL ATION (ppm/V)
1
0
–405–10–25503520110958065125
TEMPERATURE (°C)
Figure 14. ADR445 Line Regulation vs. Temperature
05428-012
Page 11
ADR440/ADR441/ADR443/ADR444/ADR445
A
A
A
50
VIN = 6V
40
30
20
10
TION (ppm/mA)
–10
–20
LOAD REGUL
–30
–40
–50
I
= 0mA TO +10mA
LOAD
0
I
= 0mA TO –5mA
LOAD
–405–10–25503520110958065125
TEMPERATURE (°C)
Figure 15. ADR445 Load Regulation vs. Temperature
05428-013
1.0
0.9
0.8
0.7
0.6
L VOLTAGE (V)
0.5
0.4
0.3
DIFFERENTI
0.2
0.1
0
–50510
LOAD CURRENT (mA)
+125°C
Figure 18. ADR445 Minimum Input/Output
Differential Voltage vs. Load Current
+25°C
–40°C
05428-016
0.7
0.6
0.5
0.4
L VOLTAGE (V)
0.3
0.2
DIFFERENTI
0.1
0
–10–50510
LOAD CURRENT (mA)
+125°C
+25°C
Figure 16. ADR441 Minimum Input/Output
Differential Voltage vs. Load Current
0.5
NO LOAD
0.4
0.3
0.2
–40°C
0.5
NO LOAD
0.4
0.3
0.2
MINIMUM HEADROOM (V)
0.1
05428-014
0
–405–10–25503520110958065125
TEMPERATURE (°C)
05428-017
Figure 19. ADR445 Minimum Headroom vs. Temperature
CIN = C
OUT
VIN = 5V/DIV
= 0.1µF
MINIMUM HEADROOM (V)
0.1
0
–405–10–25503520110958065125
TEMPERATURE (°C)
05428-015
Figure 17. ADR441 Minimum Headroom vs. Temperature
Rev. E | Page 11 of 20
V
= 1V/DIV
OUT
Figure 20. ADR441 Turn-On Response
TIME = 10µs/DIV
05428-018
Page 12
ADR440/ADR441/ADR443/ADR444/ADR445
CIN = C
= 0.1µF
OUT
TIME = 200µs/DIV
Figure 21. ADR441 Turn-Off Response
CIN = 0.1µF
C
= 10µF
OUT
VIN = 5V/DIV
V
= 1V/DIV
OUT
VIN = 5V/DIV
V
= 1V/DIV
OUT
CIN = 0.1µF
C
= 10µF
OUT
LOAD OFF
05428-019
TIME = 200µs/DIV
LOAD ON
5mV/DIV
05428-023
Figure 24. ADR441 Load Transient Response
CIN = C
= 0.1µF
OUT
LOAD OFFL OAD ON
5mV/DIV
TIME = 200µs/DIV
Figure 22. ADR441 Turn-On Response
CIN = 0.1µF
C
= 10µF
OUT
4V
TIME = 100µs/DIV
Figure 23. ADR441 Line Transient Response
2V/DIV
2mV/DIV
05428-020
TIME = 2 00µs/DIV
05428-022
Figure 25. ADR441 Load Transient Response
1µV/DIV
CH 1 p-p
1.18µV
TIME = 1s/DIV
05428-021
05428-024
Figure 26. ADR441 0.1 Hz to 10.0 Hz Voltage Noise
Rev. E | Page 12 of 20
Page 13
ADR440/ADR441/ADR443/ADR444/ADR445
A
16
14
12
50µV/DIV
CH 1 p-p
49µV
10
8
6
NUMBER OF PARTS
4
TIME = 1s/DIV
Figure 27. ADR441 10 Hz to 10 kHz Voltage Noise
1µV/DIV
TIME = 1s/DIV
Figure 28. ADR445 0.1 Hz to 10.0 Hz Voltage Noise
50µV/DIV
TIME = 1s/DIV
Figure 29. ADR445 10 Hz to 10 kHz Voltage Noise
05428-025
CH 1 p-p
2.24µV
05428-026
CH 1 p-p
66µV
05428-027
2
0
–90
–70
–150
–130
–110
–50
103050
–10
–30
DEVIATIO N (ppm)
90
70
110
05428-028
150
130
Figure 30. ADR441 Typical Output Voltage Hysteresis
10
9
8
7
6
5
4
3
OUTPUT IMPEDANCE (Ω)
2
1
0
FREQUENCY (Hz)
ADR445
ADR443
ADR441
100k10k1k10010
05428-029
Figure 31. Output Impedance vs. Frequency
0
–10
–20
–30
TIO (dB)
–40
–50
–60
–70
–80
RIPPLE REJE CTION R
–90
–100
FREQUENCY (Hz)
100k1M10k1k100
05428-030
Figure 32. Ripple Rejection Ratio vs. Frequency
Rev. E | Page 13 of 20
Page 14
ADR440/ADR441/ADR443/ADR444/ADR445
V
THEORY OF OPERATION
The ADR44x series of references uses a new reference generation
technique known as XFET (eXtra implanted junction FET).
This technique yields a reference with low dropout, good
thermal hysteresis, and exceptionally low noise. The core of the
XFET reference consists of two junction field-effect transistors
(JFETs), one of which has an extra channel implant to raise its
pinch-off voltage. By running the two JFETs at the same drain
current, the difference in pinch-off voltage can be amplified
and used to form a highly stable voltage reference.
The intrinsic reference voltage is around 0.5 V with a negative
temperature coefficient of about –120 ppm/°C. This slope is
essentially constant to the dielectric constant of silicon, and it can
be closely compensated for by adding a correction term generated
in the same fashion as the proportional-to-absolute temperature
(PTAT) term used to compensate band gap references. The
advantage of an XFET reference is its correction term, which is
approximately 20 times lower and requires less correction than
that of a band gap reference. Because most of the noise of a band
gap reference comes from the temperature compensation
circuitry, the XFET results in much lower noise.
Figure 33 shows the basic topology of the ADR44x series. The
temperature correction term is provided by a current source with
a value designed to be proportional to the absolute temperature.
The general equation is
V
= G (VP − R1 × I
OUT
) (1)
PTAT
where:
G is the gain of the reciprocal of the divider ratio.
∆V
is the difference in pinch-off voltage between the two JFETs.
P
I
is the positive temperature coefficient correction current.
PTAT
ADR44x devices are created by on-chip adjustment of R2
and R3 to achieve the different voltage options at the
reference output.
IN
I
PTAT
I
I
1
1
POWER DISSIPATION CONSIDERATIONS
The ADR44x family of references is guaranteed to deliver load
currents to 10 mA with an input voltage that ranges from 3 V to
18 V. When these devices are used in applications at higher
currents, use the following equation to account for the
temperature effects of increases in power dissipation:
T
= PD × θJA + TA (2)
J
where:
T
and TA are the junction and ambient temperatures,
J
respectively.
P
is the device power dissipation.
D
is the device package thermal resistance.
θ
JA
BASIC VOLTAGE REFERENCE CONNECTIONS
The ADR44x family requires a 0.1 µF capacitor on the input
and the output for stability. Although not required for operation,
a 10 µF capacitor at the input can help with line voltage
transient performance.
ADR440/
TP
1
NC
GND
ADR441/
ADR443/
2
ADR444/
3
ADR445
TOP VIEW
4
(Not to Scale)
V
IN
+
10µF
0.1µF
NOTES
1. NC = NO CONNECT
2. TP = TEST PIN (DO NOT CONNECT)
Figure 34. Basic Voltage Reference Configuration
TP
8
7
NC
V
OUT
6
TRIM
5
0.1µF
05428-034
NOISE PERFORMANCE
The noise generated by the ADR44x family of references is
typically less than 1.4 µV p-p over the 0.1 Hz to 10.0 Hz band
for ADR440, ADR441, and ADR443. Figure 26 shows the 0.1 Hz
to 10 Hz noise of the ADR441, which is only 1.2 µV p-p. The
noise measurement is made with a band-pass filter composed of
a 2pole high-pass filter with a corner frequency at 0.1 Hz and a
2pole low-pass filter with a corner frequency at 10.0 Hz.
ADR44x
*
∆V
P
R1
V
OUT
R2
R3
TURN-ON TIME
Upon application of power (cold start), the time required for
the output voltage to reach its final value within a specified
error band is defined as the turn-on settling time. Two components normally associated with this are the time for the active
circuits to settle and the time for the thermal gradients on the
*EXTRA CHANNEL IMPLANT
= G (∆VP – R1 × I
V
OUT
PTAT
)
Figure 33. Simplified Schematic Device
GND
05428-033
chip to stabilize. Figure 20 and Figure 21 show the turn-on and
turn-off settling times for the ADR441.
Rev. E | Page 14 of 20
Page 15
ADR440/ADR441/ADR443/ADR444/ADR445
V
V
APPLICATIONS INFORMATION
OUTPUT ADJUSTMENT
The ADR44x family features a TRIM pin that allows the user to
adjust the output voltage of the part over a limited range. This
allows errors from the reference and overall system errors to be
trimmed out by connecting a potentiometer between the output
and the ground, with the wiper connected to the TRIM pin.
Figure 35 shows the optimal trim configuration. R1 allows fine
adjustment of the output and is not always required. R
be sufficiently large so that the maximum output current from
the ADR44x is not exceeded.
0.1µF
2
V
IN
V
OUT
ADR440/
ADR441/
ADR443/
ADR444/
ADR445
TRIM
GND
4
6
5
R1
100kΩ
0.1µF
R
P
10kΩ
R2
1kΩ
VO = ±0.5%
Figure 35. ADR44x Trim Function
Using the trim function has a negligible effect on the temperature
performance of the ADR44x. However, all resistors need to be
low temperature coefficient resistors, or errors may occur.
BIPOLAR OUTPUTS
By connecting the output of the ADR44x to the inverting terminal of an operational amplifier, it is possible to obtain both
positive and negative reference voltages. Care must be taken
when choosing Resistors R1 and R2 (see Figure 36). These
resistors must be matched as closely as possible to ensure minimal differences between the negative and positive outputs. In
addition, care must be taken to ensure performance over
temperature. Use low temperature coefficient resistors if the
circuit is used over temperature; otherwise, differences exist
between the two outputs.
should
P
05428-035
+
DD
2
V
IN
ADR440/
ADR441/
ADR443/
0.1µF
ADR444/
ADR445
V
OUT
GND
4
6
0.1µF
R3
5kΩ
R1
10kΩ
10kΩ
+10V
–10V
+5V
R2
–5V
05428-036
Figure 36. ADR44x Bipolar Outputs
PROGRAMMABLE VOLTAGE SOURCE
To obtain different voltages than those offered by the ADR44x,
some extra components are needed. In Figure 37, two potentiometers are used to set the desired voltage and the buffering
amplifier provides current drive. The potentiometer connected
between V
noninverting input of the operational amplifier, takes care of
coarse trim. The second potentiometer, with its wiper connected
to the trim terminal of the ADR44x, is used for fine adjustment.
Resolution depends on the end-to-end resistance value and the
resolution of the selected potentiometer.
For a completely programmable solution, replace the two
potentiometers in Figure 37 with one Analog Devices dual
digital potentiometer, offered with either an SPI or an I
interface. These interfaces set the position of the wiper on both
potentiometers and allow the output voltage to be set. Ta ble 9
lists compatible Analog Devices digital potentiometers.
Adding a negative supply to the operational amplifier allows
the user to produce a negative programmable reference
by connecting the reference output to the inverting terminal
of the operational amplifier. Choose feedback resistors to
minimize errors over temperature.
PROGRAMMABLE CURRENT SOURCE
It is possible to build a programmable current source using a
setup similar to the programmable voltage source, as shown in
Figure 38. The constant voltage on the gate of the transistor sets
the current through the load. Varying the voltage on the gate
changes the current. This circuit does not require a dual digital
potentiometer.
CC
0.1µF
2
V
IN
ADR440/
ADR441/
ADR443/
ADR444/
ADR445
V
OUT
6
GND
4
0.1µF
AD5259
Figure 38. Programmable Current Source
I
LOAD
R
SENSE
05428-039
HIGH VOLTAGE FLOATING CURRENT SOURCE
Use the c ircu it in Figure 39 to generate a floating current source
with minimal self heating. This particular configuration can
operate on high supply voltages, determined by the breakdown
voltage of the N-channel JFET.
+
S
SST111
VISHAY
2
V
IN
ADR440/
ADR441/
ADR443/
ADR444/
ADR445
V
OUT
6
GND
4
OP90
Figure 39. Floating Current Source
2N3904
–V
S
05428-040
PRECISION OUTPUT REGULATOR
(BOOSTED REFERENCE)
IN
C
IN
0.1µF
Higher current drive capability can be obtained without
sacrificing accuracy by using the circuit in Figure 40. The
operational amplifier regulates the MOSFET turn-on, forcing
V
to equal the V
O
increased current drive capability. The circuit allows a 50 mA
load; if higher current drive is required, use a larger MOSFET.
For fast transient response, add a buffer at V
capacitive loading.
2
V
IN
ADR440/
ADR441/
ADR443/
ADR444/
ADR445
V
OUT
GND
4
6
C
0.1µF
15V
OUT
–V
Figure 40. Boosted Output Reference
. Current is then drawn from VIN, allowing
REF
to aid with
O
200Ω
2N7002
R
L
C
1µF
V
O
L
5428-041
Rev. E | Page 16 of 20
Page 17
ADR440/ADR441/ADR443/ADR444/ADR445
OUTLINE DIMENSIONS
5.00(0.1968)
4.80(0.1890)
4.00 (0.1574)
3.80 (0.1497)
0.25 (0.0098)
0.10 (0.0040)
COPLANARITY
0.10
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLYAND ARE NOT APPROPRIATE FOR USE IN DESIGN.
85
1
1.27 (0.0500)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-AA
BSC
6.20 (0.2441)
5.80 (0.2284)
4
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
0.31 (0.0122)
8°
0°
0.25 (0.0098)
0.17 (0.0067)
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
0.40 (0.0157)
45°
012407-A
Figure 41. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body
(R-8)
Dimensions shown in millimeters and (inches)
3.20
3.00
2.80
8
5
3.20
3.00
2.80
PIN 1
IDENTIFIER
0.95
0.85
0.75
0.15
0.05
COPLANARITY
1
0.65 BSC
0.10
COMPLIANT TO JEDEC STANDARDS MO-187-AA
Figure 42. 8-Lead Mini Small Outline Package [MSOP]