B grade: 3 ppm/°C
Low dropout operation: 500 mV
Input range: (V
High output source and sink current
+10 mA and −5 mA, respectively
Wide temperature range: −40°C to +125°C
APPLICATIONS
Precision data acquisition systems
High resolution data converters
Battery-powered instrumentation
Portable medical instruments
Industrial process control systems
Precision instruments
Optical control circuits
+ 500 mV) to 18 V
OUT
ADR440/ADR441/ADR443/ADR444/ADR445
PIN CONFIGURATIONS
ADR440/
TP
1
ADR441/
2
ADR443/
V
IN
ADR444/
NC
3
ADR445
TOP VIEW
4
GND
(Not to Scale)
NOTES
1. NC = NO CONNECT
2. TP = TEST P IN (DO NOT CO NNECT)
Figure 1. 8-Lead SOIC_N (R-Suffix)
ADR440/
1
TP
ADR441/
ADR443/
V
2
IN
ADR444/
3
NC
ADR445
GND
NOTES
1. NC = NO CONNECT
2. TP = TEST P IN (DO NOT CONNECT)
Figure 2. 8-Lead MSOP (RM-Suffix)
TOP VIEW
4
(Not to S cal e)
TP
8
7
NC
V
6
OUT
5
TRIM
05428-001
8
TP
NC
7
6
V
OUT
TRIM
5
05428-002
GENERAL DESCRIPTION
The ADR44x series is a family of XFET® voltage references
featuring ultralow noise, high accuracy, and low temperature
drift performance. Using Analog Devices, Inc., patented
temperature drift curvature correction and XFET (eXtra
implanted junction FET) technology, voltage change vs.
temperature nonlinearity in the ADR44x is greatly minimized.
The XFET references offer better noise performance than
buried Zener references, and XFET references operate off
low supply voltage headroom (0.5 V). This combination of
features makes the ADR44x family ideally suited for precision
signal conversion applications in high-end data acquisition
systems, optical networks, and medical applications.
The ADR44x family has the capability to source up to 10 mA of
output current and sink up to −5 mA. It also comes with a trim
terminal to adjust the output voltage over a 0.5% range without
compromising performance.
Rev. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Offered in two electrical grades, the ADR44x family is available in 8-lead MSOP and narrow SOIC packages. All versions
are specified over the extended industrial temperature range of
Changes to Ordering Guide.......................................................... 19
10/05—Revision 0: Initial Version
Rev. E | Page 2 of 20
ADR440/ADR441/ADR443/ADR444/ADR445
SPECIFICATIONS
ADR440 ELECTRICAL CHARACTERISTICS
VIN = 3 V to 18 V, TA = 25°C, CIN = C
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade
B Grade
INITIAL ACCURACY V
A Grade
0.15 %
B Grade 1 mV
0.05 %
TEMPERATURE DRIFT TCVO
A Grade −40°C < TA < +125°C 2 10 ppm/°C
B Grade −40°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ΔVO/ΔVIN −40°C < TA < +125°C −20 +10 +20 ppm/V
LOAD REGULATION ΔVO/ΔI
ΔVO/ΔI
QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 3 3.75 mA
VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 1 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 45 nV/√Hz
TURN-ON SETTLING TIME tR 10 μs
LONG-TERM STABILITY1 V
OUTPUT VOLTAGE HYSTERESIS V
RIPPLE REJECTION RATIO RRR fIN = 1 kHz −80 dB
SHORT CIRCUIT TO GND ISC 27 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 3 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 500 mV
1
The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.
= 0.1 µF, unless otherwise noted.
OUT
OERR
LOAD
2.045 2.048 2.051 V
2.047 2.048 2.049 V
3 mV
= 0 mA to 10 mA, VIN = 3.5 V,
I
LOAD
−40°C < T
LOAD
= 0 mA to −5 mA, VIN = 3.5 V,
I
LOAD
−40°C < T
1000 hours 50 ppm
O
70 ppm
O_HYS
< +125°C
A
< +125°C
A
−50 +50 ppm/mA
−50 +50 ppm/mA
Rev. E | Page 3 of 20
ADR440/ADR441/ADR443/ADR444/ADR445
ADR441 ELECTRICAL CHARACTERISTICS
VIN = 3 V to 18 V, TA = 25°C, CIN = C
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade
B Grade
INITIAL ACCURACY V
A Grade
0.12 %
B Grade 1 mV
0.04 %
TEMPERATURE DRIFT TCVO
A Grade −40°C < TA < +125°C 2 10 ppm/°C
B Grade −40°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ΔVO/ΔVIN −40°C < TA < +125°C 10 20 ppm/V
LOAD REGULATION ΔVO/ΔI
ΔVO/ΔI
QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 3 3.75 mA
VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 1.2 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 48 nV/√Hz
TURN-ON SETTLING TIME tR 10 μs
LONG-TERM STABILITY1 V
OUTPUT VOLTAGE HYSTERESIS V
RIPPLE REJECTION RATIO RRR fIN = 1 kHz −80 dB
SHORT CIRCUIT TO GND ISC 27 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 3 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 500 mV
1
The long-term stability specification is noncumulative. The drift in subsequent 1000-hour period is significantly lower than in the first 1000-hour period.
= 0.1 µF, unless otherwise noted.
OUT
OERR
LOAD
2.497 2.500 2.503 V
2.499 2.500 2.501 V
3 mV
= 0 mA to 10 mA, VIN = 4 V,
I
LOAD
−40°C < T
LOAD
= 0 mA to −5 mA, VIN = 4 V,
I
LOAD
−40°C < T
1000 hours 50 ppm
O
70 ppm
O_HYS
< +125°C
A
< +125°C
A
−50 +50 ppm/mA
−50 +50 ppm/mA
Rev. E | Page 4 of 20
ADR440/ADR441/ADR443/ADR444/ADR445
ADR443 ELECTRICAL CHARACTERISTICS
VIN = 3.5 V to 18 V, TA = 25°C, CIN = C
Table 4.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade
B Grade
INITIAL ACCURACY V
A Grade
0.13 %
B Grade 1.2 mV
0.04 %
TEMPERATURE DRIFT TCVO
A Grade −40°C < TA < +125°C 2 10 ppm/°C
B Grade −40°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ΔVO/ΔVIN −40°C < TA < +125°C 10 20 ppm/V
LOAD REGULATION ΔVO/ΔI
ΔVO/ΔI
QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 3 3.75 mA
VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 1.4 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 57.6 nV/√Hz
TURN-ON SETTLING TIME tR 10 μs
LONG-TERM STABILITY1 V
OUTPUT VOLTAGE HYSTERESIS V
RIPPLE REJECTION RATIO RRR fIN = 1 kHz −80 dB
SHORT CIRCUIT TO GND ISC 27 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 3.5 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 500 mV
1
The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.
= 0.1 µF, unless otherwise noted.
OUT
OERR
LOAD
2.996 3.000 3.004 V
2.9988 3.000 3.0012 V
4 mV
= 0 mA to 10 mA, VIN = 5 V,
I
LOAD
−40°C < T
LOAD
= 0 mA to −5 mA, VIN = 5 V,
I
LOAD
−40°C < T
1000 hours 50 ppm
O
70 ppm
O_HYS
< +125°C
A
< +125°C
A
−50 +50 ppm/mA
−50 +50 ppm/mA
Rev. E | Page 5 of 20
ADR440/ADR441/ADR443/ADR444/ADR445
ADR444 ELECTRICAL CHARACTERISTICS
VIN = 4.6 V to 18 V, TA = 25°C, CIN = C
Table 5.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade
B Grade
INITIAL ACCURACY V
A Grade
0.13 %
B Grade 1.6 mV
0.04 %
TEMPERATURE DRIFT TCVO
A Grade −40°C < TA < +125°C 2 10 ppm/°C
B Grade −40°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ΔVO/ΔVIN −40°C < TA < +125°C 10 20 ppm/V
LOAD REGULATION ΔVO/ΔI
ΔVO/ΔI
QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 3 3.75 mA
VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 1.8 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 78.6 nV/√Hz
TURN-ON SETTLING TIME tR 10 μs
LONG-TERM STABILITY1 V
OUTPUT VOLTAGE HYSTERESIS V
RIPPLE REJECTION RATIO RRR fIN = 1 kHz −80 dB
SHORT CIRCUIT TO GND ISC 27 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 4.6 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 500 mV
1
The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.
= 0.1 µF, unless otherwise noted.
OUT
OERR
1000 hours 50 ppm
O
70 ppm
O_HYS
4.091 4.096 4.101 V
4.0944 4.096 4.0976 V
5 mV
LOAD
LOAD
= 0 mA to 10 mA, VIN = 5.5 V,
I
LOAD
−40°C < T
I
LOAD
−40°C < T
< +125°C
A
= 0 mA to −5 mA, VIN = 5.5 V,
< +125°C
A
−50 +50 ppm/mA
−50 +50 ppm/mA
Rev. E | Page 6 of 20
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