Wide operating range: 50 μA to 10 mA
Initial accuracy: ±0.2% max
Output impedance: 1 Ω max
Wideband noise (10 Hz to 10 kHz): 20 μV rms
Operating temperature: −40°C to +85°C
Compact, surface-mount SC70 package
APPLICATIONS
Computer servers
Battery-powered instrumentation
Portable medical equipment
Automotive
GENERAL DESCRIPTION
The ADR1500 is a low cost, 2-terminal (shunt), precision band
gap reference. It provides an accurate 1.2875 V output for input
currents between 50 μA to 10 mA.
Voltage Reference
ADR1500
PIN CONFIGURATION
DR1500
TOP VIEW
(Not to Scale)
1
V–
3
NC (OR V–)
2
+
NC = NO CONNECT
Figure 1. 3-Lead SC70 (KS Suffix)
05749-001
The low minimum operating current makes the ADR1500 ideal
r use in battery-powered 3 V or 5 V systems. However, the
fo
wide operating current range means the ADR1500 is extremely
versatile and suitable for use in a wide variety of high current
applications.
The ADR1500 is available in the tiny SC70 package and is
pecified over the −40°C to +85°C operating temperature range.
s
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
REVERSE VOLTAGE OUTPUT 1.2849 1.2875 1.2901 V
REVERSE VOLTAGE TEMPERATURE DRIFT, −40°C to +85°C 170 220 ppm/°C
MINUMUM OPERATING CURRENT, −40°C to +85°C 50 μA
REVERSE VOLTAGE CHANGE WITH REVERSE CURRENT
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
S
tresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rev. 0 | Page 4 of 8
ADR1500
www.BDTIC.com/ADI
TYPICAL PERFORMANCE CHARACTERISTICS
1.310
1.305
1.300
100
80
1.295
1.290
1.285
REVERSE VOLTAGE (V)
1.280
1.275
1.270
–501251007550250–25
TEMPERATURE ( °C)
Figure 2. Output Drift for Different Temperature Characteristics
6
5
4
3
2
1
0
OUTPUT VO LTAGE ERROR (mV)
–1
–2
0.011010.1
REVERSE CURRENT (mA)
+125°C
+85°C
+25°C
–40°C
Figure 3. Output Voltage Error vs. Reverse Current
1000
60
40
REVERSE CURRENT (µ A)
20
05749-002
0
00.20.40.60.81.01.21.4
REVERSE VOLTAGE (V)
+85°C
+25°C
–40°C
05749-005
Figure 5. Reverse Current vs. Reverse Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
FORWARD VOLTAGE (V)
0.2
0.1
05749-003
0
0.011001100.1
+25°C
–40°C
+85°C
FORWARD CURRENT (mA)
05749-006
Figure 6. Forward Voltage vs. Forward Current
100
10
NOISE VOLTAGE (nV/ Hz)
1
1100000010010001000010000010
FREQUENCY (Hz)
05749-004
Figure 4. Noise Spectral Density
Rev. 0 | Page 5 of 8
ADR1500
V
V
T
www.BDTIC.com/ADI
THEORY OF OPERATION
V
OUT
+5V (+3V) ±10%
+
–
R
V
S
R
2.94kΩ
(1.30kΩ)
(B)
+
V
OU
–
05749-009
The ADR1500 uses the band gap concept to produce a stable
voltage reference suitable for high accuracy data acquisition
components and systems. This device makes use of the underlying
physical nature of the silicon transistor base emitter voltage in
the forward-biased operating region. All such transistors have
an approximate −2 mV/°C temperature coefficient, which is not
suitable for use as a low TC reference; however, extrapolation of
the temperature characteristic of any one of these devices to
absolute zero (with collector current proportional to absolute
temperature) reveals that V
goes to approximately the silicon
BE
band gap voltage. Therefore, if a voltage could be developed
with an opposing temperature coefficient to the sum with the
V
, than a zero TC reference would result. The ADR1500
BE
circuit in Figure 7 provides such a compensating voltage, V1,
b
y deriving two transistors at different current densities and
amplifying the resultant V
positive TC). The sum of the V
difference (ΔVBE, which has a
BE
and V1 provides a stable
BE
voltage reference.
+
V+
S
IR + I
R
S
V
R
I
R
L
I
L
(A)
Figure 8. Typical Connection Diagram
Figure 8 shows a typical connection of the ADR1500 operating
at a minimum of 100 μA. This connection can provide ±1 mA
to the load, while accommodating ±10% power supply
variations.
TURN-ON TIME
The turn-on time is a critical parameter for applications
demanding a large amount of processing. Figure 9 shows
th
e turn-on characteristics of the ADR1500.
2.4V
V1
–
+
ΔV
BE
–
+
BE
–
Figure 7. Schema
tic Diagram
V–
05749-008
APPLYING THE ADR1500
The ADR1500 is simple to use in virtually all applications. To
operate the ADR1500 as a conventional shunt reference, see
Figure 8. An external series resistor is connected between the
s
upply voltage and the ADR1500.
For a given supply voltage, the series resistor, R
reverse current flowing through the ADR1500. The value of R
must be chosen to accommodate the expected variations of the
supply voltage, V
voltage, V
, load current, IL, and the ADR1500 reverse
S
, while maintaining an acceptable reverse current, IR,
R
through the ADR1500.
The minimum value for R
10 mA when V
is at its maximum, and IL and VR are at their
S
minimum. The equation for selecting R
)(
VV
−
R
S
R
=
S
)(
II
+
LR
should be enough to limit IR to
S
S
S
is
, determines the
0VV
250mV/DIV5µs/DIV
Figure 9. Response Time
IN
CL = 200pF
05749-010
Upon application of power (cold start), the time required for
the output voltage to reach its final value within a specified
error is the turn-on settling time. Tow components are normally
associated with the time for active circuits to settle and the time
S
for the thermal gradients on the chip to stabilize. This characteristic
is generated from cold start operation and represents the true
turn-on waveform after power up. Figure 10 shows both the
urse and fine turn-on settling characteristics of the device;
co
the total settling time to within 1.0 mV is about 6 μs, and there
is no long thermal tail when the horizontal scale is expanded to
2 μs/DIV. The output turn-on time is modified when an
external noise reduction filter is used. When present, the time
constant of the filter dominates the overall settling.
Rev. 0 | Page 6 of 8
ADR1500
Ω
V
www.BDTIC.com/ADI
2.4V
0VV
IN
OUTPUT ERRO R
1mV/DIV 2µs/DIV
OUTPUT
0.5mV/DI V 2ms/DIV
05749-011
Figure 10. Turn-On Settling Time
Attempts to drive a large capacitive load (in excess of 1000 pF)
can result in ringing. This is due to the additional poles formed
by the load capacitance and the output impedance of the reference.
A recommended method for driving capacitive loads of this
magnitude is shown in Figure 11.
RS = 11.5k
IN
Figure 11. Turn-On, Settling, and Tra
R
L
+
V
R
–
C
V
L
OUT
05749-012
nsient Test Circuit
TRANSIENT RESPONSE
Many ADCs and DACs present transient current loads to the
reference. Poor reference response can degrade the converter’s
performance. Figure 12 displays both the coarse and fine
s
ettling characteristics of the device to load transient of ±50 μA.
It shows the settling characteristics of the device for an
in
creased reverse current of 50 μA and the response when the
reverse current is decreased by 50 μA. The transients settle to
1 mV in about 3 μs.
20mV/DIV1mV/DIV
IR = 100µA + 50µA ST EP
IR = 100µA – 50µA ST EP
1µs/DIV20mV/DIV1mV/DIV
Figure 12. Transient Settling Time
05749-013
A resistor isolates the capacitive load from the output stage,
while the capacitor provides a single-pole, low-pass filter and
lowers the output noise.
Rev. 0 | Page 7 of 8
ADR1500
www.BDTIC.com/ADI
OUTLINE DIMENSIONS
2.20
2.00
1.35
1.25
1.15
PIN 1
1.00
0.80
0.10 MAX
0.10 COPLANARI TY
Figure 13. 3-Lead Thin Shrink Small Outline Transistor Package [SC70]