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GENERAL DESCRIPTION
The ADR01, ADR02, ADR03, and ADR06 are precision 10.0 V,
5.0 V, 2.5 V, and 3.0 V band gap voltage references featuring high
accuracy, high stability, and low power consumption. The parts
are housed in tiny, 5-lead SC70 and TSOT packages, as well as
in 8-lead SOIC versions. The SOIC versions of the ADR01,
ADR02, and ADR03 are drop-in replacements
standard REF01, REF02, and REF03. The small footprint and
wide operating range make the ADR0x references ideally suited
for general-purpose and space-constrained applications.
With an external buffer and a simple resistor network, the
TEMP terminal can be used for temperature sensing and
approximation. A TRIM terminal is provided on the devices for
fine adjustment of the output voltage.
1
ADR01, ADR02, and ADR03 are component-level compatible with REF01, REF02, and REF03, respectively. No guarantees for system-level compatibility are implied.
SOIC versions of ADR01/ADR02/ADR03 are pin-to-pin compatible with 8-lead SOIC versions of REF01/REF02/REF03, respectively, with the additional temperature
monitoring function.
1
to the industry-
The ADR01, ADR02, ADR03, and ADR06 are compact, low
drift voltage references that provide an extremely stable output
voltage from a wide supply voltage range. They are available in
5-lead SC70 and TSOT packages, and 8-lead SOIC packages
with A, B, and C grade selections. All parts are specified over
the extended industrial (–40°C to +125°C) temperature range.
The ADR01, ADR02, ADR03, and ADR06 A grade in 8-lead
SOIC are qualified for automotive applications.
Table 1. Selection Guide
Part Number Output Voltage
ADR01 10.0 V
ADR02 5.0 V
ADR03 2.5 V
ADR06 3.0 V
Information fur
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
VIN = 12.0 V to 36.0 V, VIN = 12.0 V to 24.0 V for ADR01WARZ, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO A and C grades 9.990 10.000 10.010 V
INITIAL ACCURACY V
OUTPUT VOLTAGE VO B grade 9.995 10.000 10.005 V
INITIAL ACCURACY V
OUTPUT VOLTAGE VO ADR01WARZ 9.986 10.000 10.014 V
INITIAL ACCURACY V
0.14 %
A grade, 8-lead SOIC, −40°C < TA < +125°C 3 10 ppm/°C
DROPOUT VOLTAGE VDO 2 V
LINE REGULATION ∆VO/∆VIN VIN = 12.0 V to 36.0 V, VIN = 12.0 V to 26.0 V for
LOAD REGULATION ∆VO/∆I
QUIESCENT CURRENT IIN No load, –40°C < TA < +125°C 0.65 1 mA
VOLTAGE NOISE e
VOLTAGE NOISE DENSITY eN 1 kHz 510 nV/√Hz
TURN-ON SETTLING TIME tR 4 µs
LONG-TERM STABILITY1 ∆VO 1000 hours 50 ppm
OUTPUT VOLTAGE HYSTERESIS ∆V
RIPPLE REJECTION RATIO RRR fIN = 10 kHz −75 dB
SHORT CIRCUIT TO GND ISC 30 mA
TEMPERATURE SENSOR
Voltage Output at TEMP Pin V
Temperature Sensitivity TCV
1
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
A and C grades 10 mV
OERR
0.1 %
B grade 5 mV
OERR
0.05 %
ADR01WARZ 14 mV
OERR
A grade, 5-lead TSOT, –40°C < TA < +125°C 25 ppm/°C
B grade, 8-lead SOIC, –40°C < TA < +125°C 1 3 ppm/°C
B grade, 5-lead TSOT, –40°C < TA < +125°C 9 ppm/°C
B grade, 5-lead SC70, –40°C < TA < +125°C 9 ppm/°C
C grade, 8-lead SOIC, –40°C < TA < +125°C 10 40 ppm/°C
7 30 ppm/V
ADR01WARZ, –40°C < T
I
LOAD
0.1 Hz to 10.0 Hz 20 µV p-p
N p-p
70 ppm
O_HYS
550 mV
TEMP
1.96 mV/°C
TEMP
= 0 mA to 10 mA, –40°C < TA < +125°C,
LOAD
V
= 15.0 V
IN
< +125°C
A
40 70 ppm/mA
Rev. R | Page 4 of 20
Data Sheet ADR01/ADR02/ADR03/ADR06
A grade, 5-lead SC70, –55°C < TA < +125°C
30
ppm/°C
TEMPERATURE SENSOR
ADR02 ELECTRICAL CHARACTERISTICS
VIN = 7.0 V to 36.0 V, VIN = 7.0 V to 26.0 V for ADR02WARZ, TA = 25°C, unless otherwise noted.
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO A and C grades 4.995 5.000 5.005 V
INITIAL ACCURACY V
OUTPUT VOLTAGE VO B grade 4.997 5.000 5.003 V
INITIAL ACCURACY V
TEMPERATURE COEFFICIENT T
DROPOUT VOLTAGE VDO 2 V
LINE REGULATION ∆VO/∆VIN VIN = 7.0 V to 36.0 V, VIN = 7.0 V to 26.0 V for
VIN = 7.0 V to 36.0 V, –55°C < TA < +125°C 7 40 ppm/V
LOAD REGULATION ∆VO/∆I
QUIESCENT CURRENT IIN No load, –40°C < TA < +125°C 0.65 1 mA
VOLTAGE NOISE eN
VOLTAGE NOISE DENSITY eN 1 kHz 230 nV/√Hz
TURN-ON SETTLING TIME tR 4 µs
LONG-TERM STABILITY1 ∆VO 1000 hours 50 ppm
OUTPUT VOLTAGE HYSTERESIS ∆V
–55°C < TA < +125°C 80 ppm
RIPPLE REJECTION RATIO RRR fIN = 10 kHz –75 dB
SHORT CIRCUIT TO GND ISC 30 mA
A and C grades 5 mV
OERR
0.1 %
B grade 3 mV
OERR
0.06 %
A grade, 8-lead SOIC, –40°C < TA < +125°C 3 10 ppm/°C
CVO
A grade, 5-lead TSOT, –40°C < TA < +125°C 25 ppm/°C
A grade, 5-lead SC70, –40°C < TA < +125°C 25 ppm/°C
B grade, 8-lead SOIC, –40°C < TA < +125°C 1 3 ppm/°C
B grade, 5-lead TSOT, –40°C < TA < +125°C 9 ppm/°C
B grade, 5-lead SC70, –40°C < TA < +125°C 9 ppm/°C
C grade, 8-lead SOIC, –40°C < TA < +125°C 10 40 ppm/°C
7 30 ppm/V
ADR02WARZ, –40°C < T
I
LOAD
I
0.1 Hz to 10.0 Hz 10 µV p-p
p-p
70 ppm
O_HYS
= 0 mA to 10 mA, –40°C < TA < +125°C,
LOAD
V
= 10.0 V
IN
= 0 mA to 10 mA, –55°C < TA < +125°C,
LOAD
V
= 10.0 V
IN
< +125°C
A
40 70 ppm/mA
45 80 ppm/mA
Voltage Output at TEMP Pin V
Temperature Sensitivity TCV
1
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
550 mV
TEMP
1.96 mV/°C
TEMP
Rev. R | Page 5 of 20
ADR01/ADR02/ADR03/ADR06 Data Sheet
OUTPUT VOLTAGE
VO
B grades
2.4975
2.5000
2.5025
V
TEMPERATURE COEFFICIENT
TCVO
A grade, 8-lead SOIC, –40°C < TA < +125°C
3 10
ppm/°C
B grade, 5-lead TSOT, –40°C < TA < +125°C
9
ppm/°C
VIN = 7.0 V
I
= 0 mA to 10 mA, –55°C < TA < +125°C,
45
80
ppm/mA
SHORT CIRCUIT TO GND
ISC
30 mA
ADR03 ELECTRICAL CHARACTERISTICS
VIN = 4.5 V to 36.0 V, VIN = 4.5 V to 26.0 V for ADR03WARZ, TA = 25°C, unless otherwise noted.
Table 4.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO A and C grades 2.495 2.500 2.505 V
INITIAL ACCURACY V
A and C grades 5 mV
OERR
0.2 %
INITIAL ACCURACY V
B grades 2.5 mV
OERR
0.1 %
A grade, 5-lead TSOT, –40°C < TA < +125°C 25 ppm/°C
A grade, 5-lead SC70, –40°C < TA < +125°C 25 ppm/°C
A grade, 5-lead SC70, –55°C < TA < +125°C 30 ppm/°C
B grade, 8-lead SOIC, –40°C < TA < +125°C 1 3 ppm/°C
B grade, 5-lead SC70, –40°C < TA < +125°C 9 ppm/°C
C grade, 8-lead SOIC, –40°C < TA < +125°C 10 40 ppm/°C
DROPOUT VOLTAGE VDO 2 V
LINE REGULATION ∆VO/∆VIN VIN = 4.5 V to 36.0 V, VIN = 4.5 V to 26.0 V for
ADR03WARZ, –40°C < T
< +125°C
A
7 30 ppm/V
VIN = 4.5 V to 36.0 V, –55°C < TA < +125°C 7 40 ppm/V
LOAD REGULATION ∆ VO/∆I
LOAD
I
= 0 mA to 10 mA, –40°C < TA < +125°C,
LOAD
LOAD
25 70 ppm/mA
VIN = 7.0 V
QUIESCENT CURRENT IIN No load, –40°C < TA < +125°C 0.65 1 mA
VOLTAGE NOISE e
0.1 Hz to 10.0 Hz 6 µV p-p
N p-p
VOLTAGE NOISE DENSITY eN 1 kHz 230 nV/√Hz
TURN-ON SETTLING TIME tR 4 µs
LONG-TERM STABILITY1 ∆VO 1000 hours 50 ppm
OUTPUT VOLTAGE HYSTERESIS ∆V
70 ppm
O_HYS
–55°C < TA < +125°C 80 ppm
RIPPLE REJECTION RATIO RRR fIN = 10 kHz –75 dB
TEMPERATURE SENSOR
Voltage Output at TEMP Pin V
Temperature Sensitivity TCV
1
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
550 mV
TEMP
1.96 mV/°C
TEMP
Rev. R | Page 6 of 20
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