The ADR01, ADR02, ADR03, and ADR06 are precision 10.0 V,
5.0 V, 2.5 V, and 3.0 V band gap voltage references featuring high
accuracy, high stability, and low power. The parts are housed in
tiny, 5-lead SC70 and TSOT packages, as well as in 8-lead SOIC
versions. The SOIC versions of the ADR01, ADR02, and ADR03
are drop-in replacements
REF02, and REF03. The small footprint and wide operating
range make the ADR0x references ideally suited for generalpurpose and space-constrained applications.
1
to the industry-standard REF01,
The ADR01, ADR02, ADR03, and ADR06 are compact, low
drift voltage references that provide an extremely stable output
voltage from a wide supply voltage range. They are available in
5-lead SC70 and TSOT packages, and 8-lead SOIC packages
with A, B, and C grade selections. All parts are specified over
the extended industrial (–40°C to +125°C) temperature range.
Table 1. Selection Guide
Part Number Output Voltage
ADR01 10.0 V
ADR02 5.0 V
With an external buffer and a simple resistor network, the
TEMP terminal can be used for temperature sensing and
ADR03 2.5 V
ADR06 3.0 V
approximation. A TRIM terminal is provided on the devices for
fine adjustment of the output voltage.
1
ADRO1, ADR02, and ADR03 are component-level compatible with REF01, REF02, and REF03, respectively. No guarantees for syste-level compatibility are implied. SOIC
versions of ADR01/ADR02/ADR03 are pin-to-pin compatible with 8-lead SOIC versions of REF01/REF02/REF03, respectively, with the additional temperature
monitoring function.
Rev. K
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
VIN = 12.0 V to 40.0 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO A and C grades 9.990 10.000 10.010 V
INITIAL ACCURACY V
OUTPUT VOLTAGE VO B grade 9.995 10.000 10.005 V
INITIAL ACCURACY V
TEMPERATURE COEFFICIENT TCVO
SUPPLY VOLTAGE HEADROOM
LINE REGULATION ∆VO/∆VIN VIN = 12.0 V to 40.0 V, –40°C < TA < +125°C 7 30 ppm/V
LOAD REGULATION ∆VO/∆I
QUIESCENT CURRENT IIN No load, –40°C < TA < +125°C 0.65 1 mA
VOLTAGE NOISE e
VOLTAGE NOISE DENSITY eN 1 kHz 510 nV/√Hz
TURN-ON SETTLING TIME tR 4 μs
LONG-TERM STABILITY
1
∆V
OUTPUT VOLTAGE HYSTERESIS ∆V
RIPPLE REJECTION RATIO RRR fIN = 10 kHz
SHORT CIRCUIT TO GND ISC 30 mA
VOLTAGE OUTPUT AT TEMP PIN V
TEMPERATURE SENSITIVITY TCV
1
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
A and C grades 10 mV
OERR
0.1 %
B grade 5 mV
OERR
0.05 %
A grade, 8-lead SOIC, −40°C < T
< +125°C
A
3 10 ppm/°C
A grade, 5-lead TSOT, –40°C < TA < +125°C 25 ppm/°C
A grade, 5-lead SC70, –40°C < TA < +125°C 25 ppm/°C
B grade, 8-lead SOIC, –40°C < TA < +125°C 1 3 ppm/°C
B grade, 5-lead TSOT, –40°C < TA < +125°C 9 ppm/°C
B grade, 5-lead SC70, –40°C < TA < +125°C 9 ppm/°C
C grade, 8-lead SOIC, –40°C < TA < +125°C 10 40 ppm/°C
VIN − VO
0.1 Hz to 10.0 Hz 20 μV p-p
N p-p
1000 hours 50 ppm
O
O_HYS
550 mV
TEMP
TEMP
2 V
LOAD
= 0 mA to 10 mA, –40°C < TA < +125°C,
I
LOAD
V
= 15.0 V
IN
40 70 ppm/mA
70 ppm
−75
dB
1.96 mV/°C
Rev. K | Page 3 of 24
ADR01/ADR02/ADR03/ADR06
www.BDTIC.com/ADI
ADR02 ELECTRICAL CHARACTERISTICS
VIN = 7.0 V to 40.0 V, TA = 25°C, unless otherwise noted.
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO A and C grades 4.995 5.000 5.005 V
INITIAL ACCURACY V
OUTPUT VOLTAGE VO B grade 4.997 5.000 5.003 V
INITIAL ACCURACY V
TEMPERATURE COEFFICIENT T
SUPPLY VOLTAGE HEADROOM VIN − VO 2 V
LINE REGULATION ∆VO/∆VIN V
V
LOAD REGULATION ∆VO/∆I
QUIESCENT CURRENT IIN No load, –40°C < TA < +125°C 0.65 1 mA
VOLTAGE NOISE eN
VOLTAGE NOISE DENSITY eN 1 kHz 230 nV/√Hz
TURN-ON SETTLING TIME tR 4 μs
LONG-TERM STABILITY
1
∆V
OUTPUT VOLTAGE HYSTERESIS ∆V
–55°C < TA < +125°C 80 ppm
RIPPLE REJECTION RATIO RRR fIN = 10 kHz –75 dB
SHORT CIRCUIT TO GND ISC 30 mA
VOLTAGE OUTPUT AT TEMP PIN V
TEMPERATURE SENSITIVITY TCV
1
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
A and C grades 5 mV
OERR
0.1 %
B grade 3 mV
OERR
0.06 %
A grade, 8-lead SOIC, –40°C < TA < +125°C 3 10 ppm/°C
CVO
A grade, 5-lead TSOT, –40°C < TA < +125°C 25 ppm/°C
A grade, 5-lead SC70, –40°C < TA < +125°C 25 ppm/°C
A grade, 5-lead SC70, –55°C < TA < +125°C 30 ppm/°C
B grade, 8-lead SOIC, –40°C < TA < +125°C 1 3 ppm/°C
B grade, 5-lead TSOT, –40°C < TA < +125°C 9 ppm/°C
B grade, 5-lead SC70, –40°C < TA < +125°C 9 ppm/°C
C grade, 8-lead SOIC, –40°C < TA < +125°C 10 40 ppm/°C
= 7.0 V to 40.0 V, –40°C < TA < +125°C 7 30 ppm/V
IN
= 7.0 V to 40.0 V, –55°C < TA < +125°C 7 40 ppm/V
IN
LOAD
0.1 Hz to 10.0 Hz 10 μV p-p
p-p
1000 hours 50 ppm
O
70 ppm
O_HYS
550 mV
TEMP
1.96 mV/°C
TEMP
= 0 mA to 10 mA, –40°C < TA < +125°C,
I
LOAD
V
= 10.0 V
IN
= 0 mA to 10 mA, –55°C < TA < +125°C,
I
LOAD
= 10.0 V
V
IN
40 70 ppm/mA
45 80 ppm/mA
Rev. K | Page 4 of 24
ADR01/ADR02/ADR03/ADR06
www.BDTIC.com/ADI
ADR03 ELECTRICAL CHARACTERISTICS
VIN = 4.5 V to 40.0 V, TA = 25°C, unless otherwise noted.
Table 4.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO A and C grades 2.495 2.500 2.505 V
INITIAL ACCURACY V
OUTPUT VOLTAGE VO B grades 2.4975 2.5000 2.5025 V
INITIAL ACCURACY V
TEMPERATURE COEFFICIENT TCVO A grade, 8-lead SOIC, –40°C < TA < +125°C 3 10 ppm/°C
SUPPLY VOLTAGE HEADROOM
LINE REGULATION ∆VO/∆VIN VIN = 4.5 V to 40.0 V, –40°C < TA < +125°C 7 30 ppm/V
LOAD REGULATION ∆ VO/∆I
QUIESCENT CURRENT IIN No load, –40°C < TA < +125°C 0.65 1 mA
VOLTAGE NOISE e
VOLTAGE NOISE DENSITY eN 1 kHz 230 nV/√Hz
TURN-ON SETTLING TIME tR 4 μs
LONG-TERM STABILITY
1
∆V
OUTPUT VOLTAGE HYSTERESIS ∆V
RIPPLE REJECTION RATIO RRR fIN = 10 kHz –75 dB
SHORT CIRCUIT TO GND ISC 30 mA
VOLTAGE OUTPUT AT TEMP PIN V
TEMPERATURE SENSITIVITY TCV
1
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
A and C grades 5 mV
OERR
0.2 %
B grades 2.5 mV
OERR
0.1 %
A grade, 5-lead TSOT, –40°C < TA < +125°C 25 ppm/°C
A grade, 5-lead SC70, –40°C < TA < +125°C 25 ppm/°C
A grade, 5-lead SC70, –55°C < TA < +125°C 30 ppm/°C
B grade, 8-lead SOIC, –40°C < TA < +125°C 1 3 ppm/°C
B grade, 5-lead TSOT, –40°C < TA < +125°C 9 ppm/°C
B grade, 5-lead SC70, –40°C < TA < +125°C 9 ppm/°C
C grade, 8-lead SOIC, –40°C < TA < +125°C 10 40 ppm/°C
VIN − VO
2 V
VIN = 4.5 V to 40.0 V, –55°C < TA < +125°C 7 40 ppm/V
LOAD
0.1 Hz to 10.0 Hz 6 μV p-p
N p-p
1000 hours 50 ppm
O
70 ppm
O_HYS
= 0 mA to 10 mA, –40°C < TA < +125°C,
I
LOAD
= 7.0 V
V
IN
= 0 mA to 10 mA, –55°C < TA < +125°C,
I
LOAD
V
= 7.0 V
IN
25 70 ppm/mA
45 80 ppm/mA
–55°C < TA < +125°C 80 ppm
550 mV
TEMP
1.96 mV/°C
TEMP
Rev. K | Page 5 of 24
ADR01/ADR02/ADR03/ADR06
www.BDTIC.com/ADI
ADR06 ELECTRICAL CHARACTERISTICS
VIN = 5.0 V to 40.0 V, TA = 25°C, unless otherwise noted.
Table 5.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO A and C grades 2.994 3.000 3.006 V
INITIAL ACCURACY V
OUTPUT VOLTAGE VO B grade 2.997 3.000 3.003 V
INITIAL ACCURACY V
TEMPERATURE COEFFICIENT TCVO A grade, 8-lead SOIC, –40°C < TA < +125°C 3 10 ppm/°C
SUPPLY VOLTAGE HEADROOM VIN – VO 2 V
LINE REGULATION ∆VO/∆VIN VIN = 5.0 V to 40.0 V, –40°C < TA < +125°C 7 30 ppm/V
LOAD REGULATION ∆VO/∆I
QUIESCENT CURRENT IIN No load, –40°C < TA < +125°C 0.65 1 mA
VOLTAGE NOISE e
VOLTAGE NOISE DENSITY eN 1 kHz 510 nV/√Hz
TURN-ON SETTLING TIME tR 4 μs
LONG-TERM STABILITY
1
∆V
OUTPUT VOLTAGE HYSTERESIS ∆V
RIPPLE REJECTION RATIO RRR fIN = 10 kHz –75 dB
SHORT CIRCUIT TO GND ISC 30 mA
VOLTAGE OUTPUT AT TEMP PIN V
TEMPERATURE SENSITIVITY TCV
1
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
A and C grades 6 mV
OERR
0.2 %
B grade 3 mV
OERR
0.1 %
A grade, 5-lead TSOT, –40°C < TA < +125°C 25 ppm/°C
A grade, 5-lead SC70, –40°C < TA < +125°C 25 ppm/°C
B grade, 8-lead SOIC, –40°C < TA < +125°C 1 3 ppm/°C
B grade, 5-lead TSOT, –40°C < TA < +125°C 9 ppm/°C
B grade, 5-lead SC70, –40°C < TA < +125°C 9 ppm/°C
C grade, 8-lead SOIC, –40°C < TA < +125°C 10 40 ppm/°C
= 0 mA to 10 mA, –40°C < TA < +125°C,
I
LOAD
LOAD
V
= 7.0 V
IN
0.1 Hz to 10.0 Hz 10 μV p-p
N p-p
1000 hours 50 ppm
O
70 ppm
O_HYS
550 mV
TEMP
1.96 mV/°C
TEMP
40 70 ppm/mA
Rev. K | Page 6 of 24
ADR01/ADR02/ADR03/ADR06
V
www.BDTIC.com/ADI
DIE ELECTRICAL CHARACTERISTICS
VIN = up to 40.0 V, TA = 25°C, unless otherwise noted.
Table 6.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE
ADR01NBC VO 25°C 9.995 10.004 10.005 V
ADR03BNC VO 25°C 2.4975 2.501 2.5025 V
TEMPERATURE COEFFICIENT TCVO –40°C < TA < +125°C 10 ppm/°C
LINE REGULATION
ADR01NBC ∆VO/∆VIN V
ADR03BNC ∆VO/∆VIN V
LOAD REGULATION ∆VO/∆I
I
LOAD
QUIESCENT CURRENT IIN No load 0.65 mA
VOLTAGE NOISE e
0.1 Hz to 10.0 Hz 25 μV p-p
N p-p
= 15.0 V to 40.0 V 7 ppm/V
IN
= 4.5 V to 40.0 V 7 ppm/V
IN
= 0 to 10 mA 40 ppm/mA
LOAD
TEMP
IN
GND
TRIM
DIE SIZ E: 0.83mm × 1. 01mm
Figure 3. Die Layout
V
OUT
(SENSE)
V
OUT
(FORCE)
02747-003
Rev. K | Page 7 of 24
ADR01/ADR02/ADR03/ADR06
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
Ratings at 25°C, unless otherwise noted.
Table 7.
Parameter Rating
Supply Voltage 40.0 V
Output Short-Circuit Duration to GND Indefinite
Storage Temperature Range –65°C to +150°C
Operating Temperature Range –40°C to +125°C
Junction Temperature Range –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.