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Data Sheet
FEATURES
Low temperature coefficient
5-lead TSOT: 25 ppm/°C
Initial accuracy ±0.15%
No external capacitor required
Low noise 20 µV p-p (0.1 Hz to 10.0 Hz)
Wide operating range
12.0 V to 28.0 V
High output current: 10 mA
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications (AQEC
standard)
Military temperature range (−55°C to +125°C)
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request
Ultracompact, Precision
PIN CONFIGURATION
1
P
ADR01-EP
TOP VIEW
2
GND
(Not to S cale)
3
V
IN
Figure 1. 5-Lead TSOT Surface-Mount Package
5
TRIM
4
V
OUT
APPLICATIONS
Precision data acquisition systems
High resolution converters
Industrial process control systems
Precision instruments
PCMCIA cards
GENERAL DESCRIPTION
The ADR01-EP is a 10.0 V band gap voltage reference featuring
high accuracy, high stability, and low power consumption. This
part is housed in a tiny TSOT package. The small footprint and
wide operating range make the ADR01-EP reference ideally
suited for general-purpose and space-constrained applications.
With an external buffer and a simple resistor network, the
TEMP terminal can be used for temperature sensing and
approximation. A TRIM terminal is provided on the device for
fine adjustment of the output voltage.
The ADR01-EP is a compact, low drift voltage reference that
provides an extremely stable output voltage from a wide supply
voltage range.
Additional application and technical information can be found
in the ADR01/ADR02/ADR03/ADR06 data sheet.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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Tel: 781.329.4700 www.analog.com
ADR01-EP Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Enhanced Product Features ............................................................ 1
Applications ....................................................................................... 1
Pin Configuration ............................................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Characteristics ............................................................. 3
REVISION HISTORY
1/12—Revision 0: Initial Version
Absolute Maximum Ratings ............................................................4
Thermal Resistance .......................................................................4
ESD Caution...................................................................................4
Typical Performance Characteristics ..............................................5
Outline Dimensions ..........................................................................6
Ordering Guide .............................................................................6
Rev. 0 | Page 2 of 8
Data Sheet ADR01-EP
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VIN = 12.0 V to 28.0 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
OUTPUT VOLTAGE VO T grade 9.985 10.000 10.015 V
INITIAL ACCURACY V
TEMPERATURE COEFFICIENT TCVO T grade, 5-lead TSOT, −55°C < TA < +125°C 25 ppm/°C
DROPOUT VOLTAGE VDO 2 V
LINE REGULATION ∆VO/∆VIN VIN = 12.0 V to 28.0 V, −55°C < TA < +125°C 7 30 ppm/V
LOAD REGULATION ∆VO/∆I
QUIESCENT CURRENT IIN No load, −55°C < TA < +125°C 0.65 1 mA
VOLTAGE NOISE e
VOLTAGE NOISE DENSITY eN 1 kHz 510 nV/√Hz
TURN-ON SETTLING TIME tR 4 µs
LONG-TERM STABILITY1 ∆VO 1000 hours 50 ppm
OUTPUT VOLTAGE HYSTERESIS ∆V
RIPPLE REJECTION RATIO RRR fIN = 10 kHz −75 dB
SHORT CIRCUIT TO GND ISC 30 mA
TEMPERATURE SENSOR
Voltage Output at TEMP Pin V
Temperature Sensitivity TCV
1
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
T grade 15 mV
OERR
0.15 %
LOAD
0.1 Hz to 10.0 Hz 20 µV p-p
N p-p
70 ppm
O_HYS
550 mV
TEMP
1.96 mV/°C
TEMP
= 0 mA to 10 mA, −55°C < TA < +125°C,
I
LOAD
= 15.0 V
V
IN
40 70 ppm/mA
Rev. 0 | Page 3 of 8