Ultracompact SC70-5/TSOT-5
Low temperature coefficient
SOIC-8: 3 ppm/°C
SC70-5/TSOT-5: 9 ppm/°C
Initial accuracy ± 0.1%
No external capacitor required
Low noise 10 µV p-p (0.1 Hz to 10 Hz)
Wide operating range
ADR01: 12 V to 40 V
ADR02: 7 V to 40 V
ADR03: 4.5 V to 40 V
ADR06: 5.0 V to 40 V
High output current 10 mA
Wide temperature range: –40°C to +125°C
ADR01/ADR02/ADR03 pin compatible to industry-
standard REF01/REF02/REF03
APPLICATIONS
Precision data acquisition systems
High resolution converters
Industrial process control systems
Precision instruments
PCMCIA cards
SELECTION GUIDE
Part Number Output Voltage
ADR01 10.0 V
ADR02 5.0 V
ADR03 2.5 V
ADR06 3.0 V
1
ADR01, ADR02, and ADR03 are component-level compatible with REF01,
REF02, and REF03, respectively. No guarantees for system-level compatibility
are implied. SOIC-8 versions of ADR01/ADR02/ADR03 are pin-to-pin
compatible with SOIC-8 versions of REF01/REF02/REF03, respectively, with
the additional temperature monitoring function.
1
ADR01/ADR02/ADR03/ADR06
PIN CONFIGURATIONS
A
/
D
1
R
1
A
D
R
A
D
R
2
A
D
R
TOP VIEW
3
(Not to Scale)
A
R
D
A
D
R
D
A
R
A
R
D
TOP VIEW
(Not to Scale)
0
5
TRIM
/
2
0
/
3
0
6
0
V
4
OUT
02747-F-001
8
TP
1
0
/
/
2
0
7
NIC
/
3
0
0
6
V
6
OUT
5
TRIM
02747-F-002
1
to the industry-standard
TEMP
GND
V
IN
Figure 1. 5-Lead SC70/TSOT Surface-Mount Packages
1
TP
V
2
IN
3
TEMP
GND
4
NIC = NO INTERNAL CONNECT
TP = TEST PIN (DO NOT CONNECT)
Figure 2. 8-Lead SOIC Surface-Mount Package
GENERAL DESCRIPTION
The ADR01, ADR02, ADR03, and ADR06 are precision 10 V,
5 V, 2.5 V, and 3.0 V band gap voltage references featuring high
accuracy, high stability, and low power. The parts are housed in
tiny SC70-5 and TSOT-5 packages, as well as in SOIC-8
versions. The SOIC-8 versions of the ADR01, ADR02, and
ADR03 are drop-in replacements
REF01, REF02, and REF03. The small footprint and wide
operating range make the ADR0x references ideally suited for
general-purpose and space-constraint applications.
With an external buffer and a simple resistor network, the
TEMP terminal can be used for temperature sensing and
approximation. A TRIM terminal is provided on the devices
for fine adjustment of the output voltage.
The ADR01, ADR02, ADR03, and ADR06 are compact, low
drift voltage references that provide an extremely stable output
voltage from a wide supply voltage range. They are available in
SC70-5, TSOT-5, and SOIC-8 packages with A and B grade
selections. All parts are specified over the extended industrial
(–40°C to +125°C) temperature range.
Rev. H
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
Changes to Ordering Guide.......................................................... 20
Rev. H | Page 2 of 20
ADR01/ADR02/ADR03/ADR06
SPECIFICATIONS
ADR01 ELECTRICAL CHARACTERISTICS
VIN = 12 V to 40 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO A and C grades 9.990 10.000 10.010 V
A and C grades
OERR
OUTPUT VOLTAGE VO B grade 9.995 10.000 10.005 V
B grade
OERR
TEMPERATURE COEFFICIENT TCVO
A grade, SOIC-8, −40°C < TA < +125°C
A grade, TSOT-5, –40°C < TA < +125°C 25 ppm/°C
A grade, SC70-5, –40°C < TA < +125°C 25 ppm/°C
B grade, SOIC-8, –40°C < TA < +125°C 1 3 ppm/°C
B grade, TSOT-5, –40°C < TA < +125°C 9 ppm/°C
B grade, SC70-5, –40°C < T
< +125°C 9 ppm/°C
A
C grade, SOIC-8, –40°C < TA < +125°C 10 40 ppm/°C
SUPPLY VOLTAGE HEADROOM
V
− VO
IN
2 V
LINE REGULATION ∆VO/∆VIN VIN = 12 V to 40 V, –40°C < TA < +125°C 7 30 ppm/V
LOAD REGULATION ∆VO/∆I
LOAD
I
= 0 to 10 mA, –40°C < TA < +125°C, VIN = 15 V 40 70 ppm/mA
LOAD
QUIESCENT CURRENT IIN No load, –40°C < TA < +125°C 0.65 1 mA
VOLTAGE NOISE e
0.1 Hz to 10 Hz 20 µV p-p
N p-p
VOLTAGE NOISE DENSITY eN 1 kHz 510 nV/√Hz
TURN-ON SETTLING TIME tR 4 µs
LONG-TERM STABILITY1 ∆VO 1,000 hours 50 ppm
OUTPUT VOLTAGE HYSTERESIS ∆V
70 ppm
O_HYS
RIPPLE REJECTION RATIO RRR fIN = 10 kHz
SHORT CIRCUIT TO GND ISC 30 mA
V
VOLTAGE OUTPUT AT TEMP
550 mV
TEMP
PIN
TEMPERATURE SENSITIVITY TCV
1.96 mV/°C
TEMP
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
10 mV INITIAL ACCURACY V
0.1 %
5 mV INITIAL ACCURACY V
0.05 %
3 10 ppm/°C
−75
dB
Rev. H | Page 3 of 20
ADR01/ADR02/ADR03/ADR06
ADR02 ELECTRICAL CHARACTERISTICS
VIN = 7 V to 40 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO A and C grades 4.995 5.000 5.005 V
A and C grades
OERR
OUTPUT VOLTAGE VO B grade 4.997 5.000 5.003 V
B grade
OERR
TEMPERATURE COEFFICIENT TCVO
A grade, SOIC-8, –40°C < TA < +125°C 3 10 ppm/°C
A grade, TSOT-5, –40°C < TA < +125°C 25 ppm/°C
A grade, SC70-5, –40°C < TA < +125°C
A grade, SC70-5, –55
o
C < TA < +125oC
B grade, SOIC-8, –40°C < TA < +125°C 1 3 ppm/°C
B grade, TSOT-5, –40°C < TA < +125°C 9 ppm/°C
B grade, SC70-5, –40°C < T
< +125°C 9 ppm/°C
A
C grade, SOIC-8, –40°C < TA < +125°C 10 40 ppm/°C
SUPPLY VOLTAGE HEADROOM
V
− VO
IN
LINE REGULATION ∆VO/∆VIN V
LOAD REGULATION ∆VO/∆I
LOAD
2 V
= 7 V to 40 V, –40°C < TA < +125°C
IN
V
= 7 V to 40 V, –55°C < TA < +125°C
IN
= 0 to 10 mA, –40°C < TA < +125°C,
I
LOAD
= 10 V
V
IN
I
= 0 to 10 mA, –55°C < TA < +125°C,
LOAD
V
= 10 V
IN
QUIESCENT CURRENT IIN No load, –40°C < TA < +125°C 0.65 1 mA
VOLTAGE NOISE e
0.1 Hz to 10 Hz 10 µV p-p
N p-p
VOLTAGE NOISE DENSITY eN 1 kHz 230 nV/√Hz
TURN-ON SETTLING TIME tR 4 µs
LONG-TERM STABILITY
OUTPUT VOLTAGE HYSTERESIS ∆V
1
∆VO 1,000 hours 50 ppm
O_HYS
–55°C < T
< +125°C
A
RIPPLE REJECTION RATIO RRR fIN = 10 kHz –75 dB
SHORT CIRCUIT TO GND ISC 30 mA
VOLTAGE OUTPUT AT TEMP PIN V
TEMPERATURE SENSITIVITY TCV
550 mV
TEMP
1.96 mV/°C
TEMP
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
5 mV INITIAL ACCURACY V
0.1 %
3 mV INITIAL ACCURACY V
0.06 %
25
30
7 7 30
40
40
45
70
70
80
ppm
80
ppm/°C
ppm/°C
ppm/V
ppm/V
ppm/mA
ppm/mA
ppm
Rev. H | Page 4 of 20
ADR01/ADR02/ADR03/ADR06
ADR03 ELECTRICAL CHARACTERISTICS
VIN = 4.5 V to 40 V, TA = 25°C, unless otherwise noted.
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO A and C grades 2.495 2.500 2.505 V
A and C grades
OERR
OUTPUT VOLTAGE VO B grades 2.4975 2.5000 2.5025 V
B grades
OERR
TEMPERATURE COEFFICIENT TCVO
A grade, SOIC-8, –40°C < TA < +125°C 3 10 ppm/°C
A grade, TSOT-5, –40°C < TA < +125°C 25 ppm/°C
A grade, SC70-5, –40°C < TA < +125°C
A grade, SC70-5, –55°C < T
< +125°C
A
B grade, SOIC-8, –40°C < TA < +125°C 1 3 ppm/°C
B grade, TSOT-5, –40°C < TA < +125°C 9 ppm/°C
B grade, SC70-5, –40°C < T
< +125°C 9 ppm/°C
A
C grade, SOIC-8, –40°C < TA < +125°C 10 40 ppm/°C
SUPPLY VOLTAGE HEADROOM
V
− VO
IN
LINE REGULATION ∆VO/∆VIN V
LOAD REGULATION ∆VO/∆I
LOAD
2 V
= 4.5 V to 40 V, –40°C < TA < +125°C
IN
V
= 4.5 V to 40 V, –55°C < TA < +125°C
IN
= 0 mA to 10 mA, –40°C < TA < +125°C,
I
LOAD
V
= 7.0 V
IN
I
= 0 mA to 10 mA, –55°C < TA < +125°C,
LOAD
= 7.0 V
V
IN
QUIESCENT CURRENT IIN No load, –40°C < TA < +125°C 0.65 1 mA
VOLTAGE NOISE e
0.1 Hz to 10 Hz 6 µV p-p
N p-p
VOLTAGE NOISE DENSITY eN 1 kHz 230 nV/√Hz
TURN-ON SETTLING TIME tR 4 µs
LONG-TERM STABILITY1 ∆VO 1,000 hours 50 ppm
OUTPUT VOLTAGE HYSTERESIS ∆V
O_HYS
–55°C < T
< +125°C
A
RIPPLE REJECTION RATIO RRR fIN = 10 kHz –75 dB
SHORT CIRCUIT TO GND ISC 30 mA
VOLTAGE OUTPUT AT TEMP PIN V
TEMPERATURE SENSITIVITY TCV
550 mV
TEMP
1.96 mV/°C
TEMP
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
5 mV INITIAL ACCURACY V
0.2 %
2.5 mV INITIAL ACCURACY V
0.1 %
25
30
7 7 30
40
25
45
70
70
80
ppm
80
ppm/°C
ppm/°C
ppm/V
ppm/V
ppm/mA
ppm/mA
ppm
Rev. H | Page 5 of 20
ADR01/ADR02/ADR03/ADR06
ADR06 ELECTRICAL CHARACTERISTICS
VIN = 5.0 V to 40 V, TA = 25°C, unless otherwise noted.
Table 4.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO A and C grades 2.994 3.000 3.006 V
A and C grades
OERR
OUTPUT VOLTAGE VO B grade 2.997 3.000 3.003 V
B grade
OERR
TEMPERATURE COEFFICIENT TCVO
A grade, SOIC-8, –40°C < TA < +125°C 3 10 ppm/°C
A grade, TSOT-5, –40°C < TA < +125°C 25 ppm/°C
A grade, SC70-5, –40°C < TA < +125°C 25 ppm/°C
B grade, SOIC-8, –40°C < TA < +125°C 1 3 ppm/°C
B grade, TSOT-5, –40°C < TA < +125°C 9 ppm/°C
B grade, SC70-5, –40°C < T
< +125°C 9 ppm/°C
A
C grade, SOIC-8, –40°C < TA < +125°C 10 40 ppm/°C
SUPPLY VOLTAGE HEADROOM VIN – VO 2 V
LINE REGULATION ∆VO/∆VIN VIN = 5 V to 40 V, –40°C < TA < +125°C 7 30 ppm/V
LOAD REGULATION ∆VO/∆I
LOAD
I
= 0 to 10 mA, –40°C < TA < +125°C, VIN = 7.0 V 40 70 ppm/mA
LOAD
QUIESCENT CURRENT IIN No load, –40°C < TA < +125°C 0.65 1 mA
VOLTAGE NOISE e
0.1 Hz to 10 Hz 10 µV p-p
N p-p
VOLTAGE NOISE DENSITY eN 1 kHz 510 nV/√Hz
TURN-ON SETTLING TIME tR 4 µs
LONG-TERM STABILITY1 ∆VO 1,000 hours 50 ppm
OUTPUT VOLTAGE HYSTERESIS ∆V
70 ppm
O_HYS
RIPPLE REJECTION RATIO RRR fIN = 10 kHz –75 dB
SHORT CIRCUIT TO GND ISC 30 mA
VOLTAGE OUTPUT AT TEMP PIN V
TEMPERATURE SENSITIVITY TCV
550 mV
TEMP
1.96 mV/°C
TEMP
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
6 mV INITIAL ACCURACY V
0.2 %
3 mV INITIAL ACCURACY V
0.1 %
Rev. H | Page 6 of 20
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