Analog Devices ADP667 Datasheet
+5 V Fixed, Adjustable
a
FEATURES
Low-Dropout: 150 mV @ 200 mA
Low Power CMOS: 20 µA Quiescent Current
Shutdown Mode: 0.2 µA Quiescent Current
250 mA Output Current
Pin Compatible with MAX667
Stable with 10 µF Load Capacitor
Low Battery Detector
Fixed +5 V or Adjustable Output
+3.5 V to +16.5 V Input Range
Dropout Detector Output
APPLICATIONS
Handheld Instruments
Cellular Telephones
Battery Operated Devices
Portable Equipment
Solar Powered Instruments
High Efficiency Linear Power Supplies
Low-Dropout Linear Voltage Regulator
ADP667
FUNCTIONAL BLOCK DIAGRAM
OUT
DD
SET
SHDN
LBO
LBI
GND
IN
ADP667
A1
C1
C2
1.255V
REF
50mV
GENERAL DESCRIPTION
The ADP667 is a low-dropout precision voltage regulator that
can supply up to 250 mA output current. It can be used to give
a fixed +5 V output with no additional external components or
can be adjusted from +1.3 V to +16 V using two external resistors. Fixed or adjustable operation is automatically selected via
the SET input. The low quiescent current (20 µA) in conjunc-
tion with the standby or shutdown mode (0.2 µA) makes this
device especially suitable for battery powered systems. The
dropout voltage when supplying 100 µA is only 5 mV allowing
operation with minimal headroom and prolonging the battery
useful life. At higher output current levels the dropout remains
low increasing to just 150 mV when supplying 200 mA. A wide
input voltage range from 3.5 V to 16.5 V is allowable.
Additional features include a dropout detector and a low supply/
battery monitoring comparator. The dropout detector can be
used to signal loss of regulation, while the low battery detector
can be used to monitor the input supply voltage.
The ADP667 is a pin-compatible replacement for the MAX667.
It is specified over the industrial temperature range –40°C to
+85°C and is available in an 8-pin DIP and in narrow surface
mount (SOIC) packages.
TYPICAL OPERATING CIRCUIT
+6V
INPUT
IN
+
OUT
ADP667
GNDSET SHDN
+5V
+
OUTPUT
C1
10µF
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
ADP667AN –40°C to +85°C 8-Pin Plastic DIP N-8
ADP667AR –40°C to +85°C 8-Lead SOIC SO-8
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
© Analog Devices, Inc., 1995
One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.
Tel: 617/329-4700 Fax: 617/326-8703
ADP667–SPECIFICATIONS
(VIN = +9 V, GND = 0 V, V
otherwise noted)
= +5 V, C
OUT
= 10 µF, T
L
A
= T
MIN
to T
MAX
unless
Parameter Min Typ Max Units Test Conditions/Comments
Input Voltage, V
IN
Output Voltage, V
OUT
3.5 16.5 V
4.8 5.0 5.2 V V
= 0 V, VIN = 6 V, I
SET
Maximum Output Current 250 mA VIN = +6 V, +4.5 V < V
Quiescent Current
: Shutdown Mode 0.2 1 µAV
I
GND
2 µAT
I
: Normal Mode V
GND
20 25 µAI
20 30 µAI
515 mAI
35 µAI
50 µAI
20 mA I
Dropout Voltage 5 60 mV I
75 mV T
150 250 mV I
350 mV TA = T
Load Regulation 50 100 mV I
250 mV T
Line Regulation 5 10 mV VIN = 6 V to 10 V, I
15 mV TA = T
SET Reference Voltage, V
SET Input Leakage Current, I
SET
SET
1.23 1.255 1.28 V
±0.01 ±10 nA V
±1000 nA T
Output Leakage Current, I
Short-Circuit Current, I
OUT
OUT
0.1 1 µAV
400 mA T
450 mA TA = T
Low Battery Detector Input Threshold, V
LBI Input Leakage Current, I
LBI
1.215 1.255 1.295 V
LBI
±0.01 ±10 nA V
±1000 nA T
Low Battery Detector Output Voltage, V
LBO
0.25 V V
0.40 V TA = T
Shutdown Input Threshold Voltage, V
Shutdown Input Leakage Current, I
SHDN
SHDN
1.5 V
±0.01 ±10 nA V
±1000 nA T
Dropout Detector Output Voltage 0.25 V (V
4.0 (V
Specifications subject to change without notice.
= 2 V, T
SHDN
= T
A
MIN
= 0 V, V
SHDN
= 0 µA
OUT
= 100 µA
OUT
= 200 mA
OUT
T
= T
A
MIN
= 0 µA
OUT
= 100 µA
OUT
= 200 mA
OUT
= 100 µA, TA = +25°C
OUT
= T
A
MIN
= 200 mA, T
OUT
MIN
= 10 mA–200 mA, VIN = 6 V, T
OUT
= T
A
MIN
MIN
= 1.5 V, T
SET
= T
A
MIN
= 2 V
SHDN
= +25°C
A
MIN
= 1.5 V, T
LBI
= T
A
MIN
< 1.215 V, I
LBI
MIN
= 0 V to VIN, T
SHDN
= T
A
MIN
= 0 V, V
SET
V
= 7 V, I
IN
= 0 V, V
SET
VIN = 4.5 V, I
to T
to T
to T
to T
to T
to T
to T
to T
to T
to T
to T
SHDN
OUT
SHDN
OUT
= +25°C
A
MAX
= 0 V, T
SET
MAX
MAX
= +25°C
A
MAX
MAX
OUT
MAX
= +25°C
A
MAX
MAX
= +25°C
A
MAX
= 10 mA, T
LBO
MAX
A
MAX
= 0 V, R
= 10 mA)
= 0 V, R
= 10 mA)
= 10 mA
OUT
< +5.5 V
OUT
= +25°C
A
= 10 mA, T
= +25°C
A
= +25°C
= 100 kΩ
DD
= 100 kΩ
DD
= +25°C
A
= +25°C
A
ABSOLUTE MAXIMUM RATINGS*
(T
= +25°C unless otherwise noted)
A
Input Voltage, VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +18 V
Output Short Circuit to GND Duration . . . . . . . . . . . . . . 1 sec
LBO Output Sink Current . . . . . . . . . . . . . . . . . . . . . . . 50 mA
LBO Output Voltage . . . . . . . . . . . . . . . . . . . . . GND to V
OUT
SHDN Input Voltage . . . . . . . . . . . . . . . . –0.3 V (VIN + 0.3 V)
LBI, SET Input Voltage . . . . . . . . . . . . . –0.3 V (V
+ 0.3 V)
IN
Power Dissipation, N-8 . . . . . . . . . . . . . . . . . . . . . . . . 625 mW
(Derate 8.3 mW/°C above +50°C)
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 120°C/W
θ
JA
Power Dissipation, SO-8 . . . . . . . . . . . . . . . . . . . . . . . 450 mW
(Derate 6 mW/°C above +50°C)
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 170°C/W
θ
JA
Operating Temperature Range
Industrial (A Version) . . . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300°C
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 6000 V
*This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods of time may affect reliability.
–2–
REV. 0
ADP667
ADP667
IN
SHDN
LBO
LBI
GND
50mV
SET
DD
OUT
1.255V
REF
A1
C1
C2
PIN FUNCTION DESCRIPTION
Mnemonic Function
DD Dropout Detector Output. PNP collector output
GENERAL INFORMATION
The ADP667 contains a micropower bandgap reference voltage
source, an error amplifier A1, two comparators (C1, C2) and a
series PNP output pass transistor.
which sources current as dropout is reached.
V
IN
Voltage Regulator Input.
GND Ground Pin. Must be connected to 0 V.
LBI Low Battery Detect Input. Compared with 1.255 V.
LBO Low Battery Detect Output. Open Drain Output
that goes low when LBI is below the threshold.
SHDN Digital Input. May be used to disable the device
so that the power consumption is minimized.
SET Voltage Setting Input. Connect to GND for +5 V
output or connect to resistive divider for adjustable output.
OUT Regulated Output Voltage. Connect to filter
capacitor.
CIRCUIT DESCRIPTION
The internal bandgap voltage reference is trimmed to 1.255 V
and is used as a reference input to the error amplifier A1. The
feedback signal from the regulator output is supplied to the
other input by an on-chip voltage divider or by two external
resistors. When the SET input is at ground, the internal divider
provides the error amplifier’s feedback signal giving a +5 V output. When SET is at more than 50 mV above ground, comparator C1 switches the error amplifier’s input directly to the SET
pin, and external resistors are used to set the output voltage.
The external resistors are selected so that the desired output
voltage gives 1.255 V at the SET input.
The output from the error amplifier supplies base current to the
PNP output pass transistor which provides output current. Up
to 250 mA output current is available provided that the device
power dissipation is not exceeded.
DIP & SOIC PIN CONFIGURATION
Comparator C2 compares the voltage on the Low Battery Input,
LBI, pin to the internal +1.255 V reference voltage. The output
DD
OUT
LBI
GND
1
2
ADP667
TOP VIEW
3
(Not to Scale)
4
8
IN
7
LBO
6
SET
5
SHDN
from the comparator drives an open drain FET connected to the
Low Battery Output pin, LBO. The Low Battery Threshold
may be set using a suitable voltage divider connected to LBI.
When the voltage on LBI falls below 1.255 V, the open drain
output, LBO, is pulled low.
A shutdown (SHDN) input that can be used to disable the
error amplifier and hence the voltage output is also available.
The supply current in shutdown is less than 1 µA.
TERMINOLOGY
Dropout Voltage: The input/output voltage differential at
which the regulator no longer maintains regulation against further reductions in input voltage. It is measured when the output
decreases 100 mV from its nominal value. The nominal value is
the measured value with V
IN
= V
OUT
+2 V.
Line Regulation: The change in output voltage as a result of a
change in the input voltage. It is specified for a change of input
voltage from 6 V to 10 V.
Load Regulation: The change in output voltage for a change
in output current. It is specified for an output current change
from 10 mA to 200 mA.
Quiescent Current (I
): The input bias current which
GND
flows into the regulator not including load current. It is measured on the GND line and is specified in shutdown and also for
different values of load current.
Figure 1. ADP667 Functional Block Diagram
Shutdown: The regulator is disabled and power consumption
is minimized.
Dropout Detector: An output that indicates that the regulator
is dropping out of regulation.
Maximum Power Dissipation: The maximum total device
dissipation for which the regulator will continue to operate
within specifications.
REV. 0
–3–
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