Analog Devices ADP3367 Datasheet

+5 V Fixed, Adjustable
ADP3367
IN
SHDN
LBO
LBI
GND
50mV
SET
DD
OUT
1.255V REF
A1
C1
C2
a
FEATURES Low Dropout: 150 mV @ 200 mA
Low Dropout: 300 mV @ 300 mA
Low Power CMOS: 17 mA Quiescent Current Shutdown Mode: 0.2 mA Quiescent Current 300 mA Output Current Guaranteed Pin Compatible with MAX667 Stable with 10 mF Load Capacitor +2.5 V to +16.5 V Operating Range Low Battery Detector Fixed +5 V or Adjustable Output High Accuracy: 62% Dropout Detector Output Low Thermal Resistance Package* ESD > 6000 V
APPLICATIONS Handheld Instruments Cellular Telephones Battery Operated Devices Portable Equipment Solar Powered Instruments High Efficiency Linear Power Supplies
Low-Dropout Linear Voltage Regulator
ADP3367*
FUNCTIONAL BLOCK DIAGRAM
TYPICAL OPERATING CIRCUIT
+6V
INPUT
IN
+
ADP3367
OUT
+
C1 10µF
+5V OUTPUT
GENERAL DESCRIPTION
GNDSET SHDN
The ADP3367 is a low-dropout precision voltage regulator that can supply up to 300 mA output current. It can be used to give a fixed +5 V output with no additional external components or can be adjusted from +1.3 V to +16 V using two external resistors. Fixed or adjustable operation can be selected via the SET input. The low quiescent current (17 µA) in conjunction
400
TA = +50°C
with the standby or shutdown mode (0.2 µA) makes this device especially suitable for battery powered systems. The dropout voltage when supplying 100 µA is only 15 mV allowing opera-
300
GUARANTEED 300mA
tion with minimal headroom thereby prolonging the useful bat­tery life. At higher output current levels the dropout remains low increasing to just 150 mV when supplying 200 mA. A wide input voltage range from 2.5 V to 16.5 V is allowable. Addi­tional features include a dropout detector and a low supply/bat­tery monitoring comparator. The dropout detector can be used to signal loss of regulation while the low battery detector can be used to monitor the input supply voltage.
The ADP3367 is a much improved pin-compatible replacement for the MAX667. Improvements include lower supply current, tighter voltage accuracy and superior line and load regulation. Improved ESD protection (>6000 V) is achieved by advanced voltage clamping structures. The ADP3367 is specified over the industrial temperature range –40°C to +85°C and is available in narrow surface mount (SOIC) packages.
ADI’s proprietary Thermal Coastline leadframe used in ADP3367AR packaging, has 30% lower thermal resistance than the standard leadframes. This improvement in heat flow rate results in lower
200
LOAD CURRENT – mA
100
STANDARD
SO PACKAGE
DISSIPATION LIMIT
0
015
ADP3367 DISSIPATION LIMIT
510
VIN–V
– V
OUT
Load Current vs. Input-Output Differential Voltage
die temperature hence improves reliability.
*Patent pending.
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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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ADP3367–SPECIFICA TIONS
(VIN = +9 V, GND = 0 V, V
= +5 V, TA = T
OUT
MIN
to T
unless otherwise noted)
MAX
Parameter Min Typ Max Units Test Conditions/Comments
Input Voltage, V
IN
Output Voltage, V
OUT
2.5 16.5 V
4.9 5.0 5.1 V V
= 0 V, VIN = 6 V, I
SET
Maximum Output Current 200 mA VIN = +9 V, + 4.5 V < V Quiescent Current
: Shutdown Mode 0.2 0.75 µAV
I
GND
: Normal Mode V
I
GND
17 25 µAI 20 30 µAI 514 mAI
= 2 V
SHDN
= 0 V, V
SHDN
= 0 µA
OUT
= 100 µA
OUT
= 200 mA
OUT
SET
= 0 V
Dropout Voltage
= 5 V 15 40 mV I
V
OUT
60 125 mV I 100 175 mV I 150 250 mV I 175 300 mV I 300 500 mV I
= 3.3 V 94 140 mV I
V
OUT
210 312 mV I 430 625 mV I
Load Regulation 5 10 mV I Line Regulation 0.1 5 mV VIN = 6 V to 10 V, I
Reference Voltage, V
SET
1.23 1.255 1.28 V
= 100 µA
OUT
= 50 mA
OUT
= 100 mA
OUT
= 200 mA, TA = +25°C
OUT
= 200 mA
OUT
= 300 mA
OUT
= 50 mA
OUT
= 100 mA
OUT
= 200 mA, TA = +25°C
OUT
= 10 mA–100 mA, VIN = 6 V
OUT
= 10 mA–200 mA, VIN = 6 V
I
OUT
OUT
= 10 mA
SET Input Threshold 50 mV SET Input Current, I
Output Leakage Current, I Short Circuit Current, I
Low Battery Detector Input Threshold, V
SET
OUT
OUT
LBI
1.215 1.255 1.295 V
±0.01 ±10 nA V
0.1 1 µAV
= 1.5 V
SET
SHDN
= 2 V 400 mA TA = +25°C 450 mA TA = T
MIN
to T
MAX
LBI Hysteresis 6 mV LBI Input Leakage Current, I Low Battery Detector Output Voltage, V
LBI
LBO
±0.01 ±10 nA V
0.25 V V
0.40 V V
Shutdown Input Voltage, V
SHDN
1.5 V V
0.4 V V
Shutdown Input Current, I
SHDN
±0.01 ±10 nA V
Dropout Detector Output Voltage 0.25 V (V
4.0 (V
Specifications subject to change without notice.
= 1.5 V
LBI
= 0 V, I
LBI
= 0 V, I
LBI
IH IL
= 0 V to V
SHDN
= 0 V, V
SET
= 7 V, I
V
IN
SET
OUT
= 0 V, V
VIN = 4.5 V, I
= 10 mA, TA = +25°C
LBO
= 10 mA, TA = T
LBO
IN
= 0 V, RDD = 100 k,
SHDN
= 10 mA)
= 0 V, RDD = 100 k,
SHDN
= 10 mA)
OUT
= 10 mA
OUT
< +5.5 V
OUT
MIN
to T
MAX
ABSOLUTE MAXIMUM RATINGS*
(
TA= +25°C unless otherwise noted)
Input Voltage, VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +18 V
Output Short Circuit to GND Duration . . . . . . . . . . . . . 1 sec
LBO Output Sink Current . . . . . . . . . . . . . . . . . . . . . . . 50 mA
LBO Output Voltage . . . . . . . . . . . . . . . . . . . . . GND to V
OUT
SHDN Input Voltage . . . . . . . . . . . . . . –0.3 V to (VIN + 0.3 V)
LBI, SET Input Voltage . . . . . . . . . . . –0.3 V to (V
+ 0.3 V)
IN
Power Dissipation, R-8 . . . . . . . . . . . . . . . . . . . . . . . 960 mW
(Derate 10 mW/°C above +50°C)
θ
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 98°C/W
JA
Operating Temperature Range
Industrial (A Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . +300°C
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 6000 V
*This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operation sections of this specifica­tion is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.
ORDERING GUIDE
Model Temperature Range Package Option*
ADP3367AR –40°C to +85°C SO-8
*SO = Small Outline Package.
–2–
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ADP3367
ADP3367
IN
SHDN
LBO
LBI
GND
50mV
SET
DD
OUT
1.255V REF
A1
C1
C2
PIN FUNCTION DESCRIPTION
Mnemonic Function
DD Dropout Detector Output. PNP collector output
GENERAL INFORMATION
The ADP3367 contains a micropower bandgap reference volt­age source, an error amplifier A1, two comparators (C1, C2) and a series PNP output pass transistor.
which sources current as dropout is reached.
V
IN
Voltage Regulator Input. GND Ground Pin. Must be connected to 0 V. LBI Low Battery Detect Input. Compared with 1.255 V. LBO Low Battery Detect Output. Open Drain Output
that goes low when LBI is below the threshold. SHDN Digital Input. May be used to disable the device
so that the power consumption is minimized. SET Voltage Setting Input. Connect to GND for +5 V
output or connect to resistive divider for adjust-
able output. OUT Regulated Output Voltage. Connect to filter
capacitor.
CIRCUIT DESCRIPTION
The internal bandgap voltage reference is trimmed to 1.255V and is used as a reference input to the error amplifier A1. The feedback signal from the regulator output is supplied to the other input by an on-chip voltage divider or by two external resistors. When the SET input is at ground, the internal divider provides the error amplifier’s feedback signal giving a +5V out­put. When SET is at more than 50 mV above ground, compara­tor C1 switches the error amplifier’s input directly to the SET pin, and external resistors are used to set the output voltage. The external resistors are selected so that the desired output voltage gives 1.255 V at the SET input.
The output from the error amplifier supplies base current to the PNP output pass transistor which provides output current. Up to 300 mA output current is available provided that the device power dissipation is not exceeded.
DIP & SOIC PIN CONFIGURATION
Comparator C2 compares the voltage on the Low Battery Input (LBI) pin to the internal +1.255 V reference voltage. The out-
DD
OUT
LBI
GND
1 2
ADP3367
TOP VIEW
3
(Not to Scale)
4
8
IN
7
LBO
6
SET
5
SHDN
put from the comparator drives an open drain FET connected to the Low Battery Output pin, LBO. The Low Battery Thresh­old may be set using a suitable voltage divider connected to LBI. When the voltage on LBI falls below 1.255 V, the open drain output, LBO, is pulled low.
A shutdown (SHDN) input that can be used to disable the error amplifier and hence the voltage output is also available.
TERMINOLOGY
The supply current in shutdown is less than 0.75 µA.
Dropout Voltage: The input/output voltage differential at which the regulator no longer maintains regulation against fur­ther reductions in input voltage. It is measured when the output decreases 100 mV from its nominal value. The nominal value is the measured value with V
IN
= V
OUT
+2 V.
Line Regulation: The change in output voltage as a result of a change in the input voltage. It is specified for a change of input voltage from 6 V to 10 V.
Load Regulation: The change in output voltage for a change in output current. It is specified for an output current change from 10 mA to 200 mA.
Quiescent Current (I
): The input bias current which
GND
flows into the regulator not including load current. It is mea­sured on the GND line and is specified in shutdown and also for different values of load current.
Figure 1. ADP3367 Functional Block Diagram
Shutdown: The regulator is disabled and power consumption is minimized.
Dropout Detector: An output that indicates that the regulator is dropping out of regulation.
Maximum Power Dissipation: The maximum total device dissipation for which the regulator will continue to operate within specifications.
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–3–
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