Fixed (ADP322) and adjustable output (ADP323) options
Bias voltage range (VBIAS): 2.5 V to 5.5 V
LDO input voltage range (VIN1/VIN2, VIN3): 1.8 V to 5.5 V
Three 200 mA low dropout voltage regulators (LDOs)
16-lead, 3 mm × 3 mm LFCSP
Initial accuracy: ±1%
Stable with 1 μF ceramic output capacitors
No noise bypass capacitor required
3 independent logic controlled enables
Overcurrent and thermal protection
Key specifications
High PSRR
76 dB PSRR up to 1 kHz
70 dB PSRR at 10 kHz
60 dB PSRR at 100 kHz
40 dB PSRR at 1 MHz
Low output noise
29 μV rms typical output noise at V
55 μV rms typical output noise at V
Excellent transient response
Low dropout voltage: 110 mV at 200 mA load
85 μA typical ground current at no load, all LDOs enabled
100 μs fast turn-on circuit
Guaranteed 200 mA output current per regulator
−40°C to +125°C junction temperature
APPLICATIONS
Mobile phones
Digital cameras and audio devices
Portable and battery-powered equipment
Portable medical devices
Post dc-to-dc regulation
= 1.2 V
OUT
= 2.8 V
OUT
High PSRR Voltage Regulator
ADP322/ADP323
TYPICAL APPLICATION CIRCUITS
VBIAS
LDO 1
EN LD1
VBIAS
LDO 2
EN LD2
VBIAS
LDO 3
EN LD3
GND
VBIAS
LDO 1
EN LD1
VBIAS
LDO 2
EN LD2
VBIAS
LDO 3
EN LD3
GND
FB1
FB2
FB3
VOUT1
+
1µF
VOUT2
+
1µF
VOUT3
+
1µF
VOUT1
+
1µF
VOUT2
+
1µF
VOUT3
+
1µF
2.5V T
1.8V T
1.8V T
2.5V TO
5.5V
1.8V TO
5.5V
1.8V TO
5.5V
OFF
OFF
OFF
ADP322
ON
ON
ON
5.5V
5.5V
5.5V
VBIAS
VIN1/VIN2
VIN3
+
1µF
+
1µF
EN1
EN2
+
1µF
EN3
Figure 1. Typical Application Circuit for ADP322
VBIAS
VIN1/VIN2
VIN3
+
1µF
+
1µF
EN1
EN2
+
1µF
EN3
ADP323
ON
OFF
ON
OFF
ON
OFF
Figure 2. Typical Application Circuit for ADP323
09288-001
09288-053
GENERAL DESCRIPTION
The ADP322/ADP323 200 mA triple output LDOs combine high
PSRR, low noise, low quiescent current, and low dropout voltage
to extend the battery life of portable devices and are ideally
suited for wireless applications with demanding performance
and board space requirements.
The ADP322/ADP323 PSRR is greater than 60 dB for frequencies
as high as 100 kHz while operating with a low headroom voltage.
The ADP322/ADP323 offer much lower noise performance
than competing LDOs without the need for a noise bypass
capacitor.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
The ADP322/ADP323 are available in a miniature 16-lead,
3 mm × 3 mm LFCSP package and are stable with tiny 1 µF
±30% ceramic output capacitors providing the smallest possible
board area for a wide variety of portable power needs.
The ADP322 is available in output voltage combinations ranging
from 0.8 V to 3.3 V and offers overcurrent and thermal protection
to prevent damage in adverse conditions. The APDP323
adjustable triple LDO can be configured for any output voltage
between 0.5 V and 5 V with two resistors for each output.
EN1 = EN2 = EN3 = GND, TJ = −40°C to +125°C 2.5 μA
FEEDBACK INPUT CURRENT FBIN 0.01 μA
VOLTAGE ACCURACY
LINE REGULATION ∆V
V
LOAD REGULATION2 ∆V
I
DROPOUT VOLTAGE3 V
I
I
I
START-UP TIME4 T
V
V
CURRENT LIMIT THRESHOLD5 I
THERMAL SHUTDOWN
= V
IN1/VIN2
= C
IN
OUT1
IN3
= C
= (V
OUT2
Input Bias Voltage Range V
Input LDO Voltage Range V
Ground Current with All
+ 0.5 V) or 1.8 V (whichever is greater), V
OUT
= C
= 1 µF, and TA = 25°C, unless otherwise noted.
OUT3
T
BIAS
IN1/VIN2/VIN3
I
I
GND
= −40°C to +125°C 2.5 5.5 V
J
TJ = −40°C to +125°C 1.8 5.5 V
OUT
BIAS
= 0 μA 85 μA
Regulators On
= 0 μA, TJ = −40°C to +125°C 160 μA
OUT
= 10 mA 120 μA
OUT
= 10 mA, TJ = −40°C to +125°C 220 μA
OUT
= 200 mA 250 μA
OUT
= 200 mA, TJ = −40°C to +125°C 380 μA
OUT
Bias Voltage Input Current I
Shutdown Current I
Output Voltage Accuracy
66 μA
BIAS
= −40°C to +125°C 140 μA
J
EN1 = EN2 = EN3 = GND 0.1 μA
GND-SD
−1 +1 %
V
OUT
(ADP322)
0.495 0.5 0.505 V
Feedback Voltage Accuracy
(ADP323)
1
V
FB
100 μA < I
T
= −40°C to +125°C
J
100 μA < I
= −40°C to +125°C
T
J
/∆VIN VIN = (V
OUT
= (V
IN
/∆I
I
OUT
OUT
DROPOUT
V
START-UP
= 1 mA to 200 mA 0.001 %/mA
OUT
= 1 mA to 200 mA, TJ = −40°C to +125°C 0.005 %/mA
OUT
V
= 3.3 V mV
OUT
I
= 10 mA 6 mV
OUT
= 10 mA, TJ = −40°C to +125°C 9 mV
OUT
= 200 mA 110 mV
OUT
= 200 mA, TJ = −40°C to +125°C 170 mV
OUT
= 3.3 V, all V
OUT
= 0.8 V 100 μs
OUT
= 3.3 V, one V
V
OUT
< 200 mA, VIN = (V
OUT
< 200 mA, VIN = (V
OUT
+ 0.5 V) to 5.5 V 0.01 %/ V
OUT
+ 0.5 V) to 5.5 V, TJ = −40°C to +125°C −0.03 +0.03 %/ V
OUT
OUT
third LDO
= 0.8 V 20 μs
OUT
250 360 600 mA
LIMIT
Thermal Shutdown Threshold TSSD T
Thermal Shutdown Hysteresis TS
15 °C
SD-HYS
rising 155 °C
J
= 2.5 V, EN1, EN2, EN3 = V
+ 0.5 V) to 5.5 V,
OUT
+ 0.5 V) to 5.5 V,
OUT
, I
= I
= I
BIAS
OUT1
OUT2
= 10 mA,
OUT3
−2 +2 %
0.490 0.510 V
initially off, enable any LDO 240 μs
initially on, enable second or
OUT
160 μs
Rev. A | Page 3 of 24
ADP322/ADP323 Data Sheet
Parameter Symbol Conditions Min Typ Max Unit
EN INPUT
EN Input Logic High VIH 2.5 V ≤ V
EN Input Logic Low VIL 2.5 V ≤ V
EN Input Leakage Current V
EN1 = EN2 = EN3 = VIN or GND 0.1 μA
I-LEAKAGE
EN1 = EN2 = EN3 = V
= −40°C to +125°C
T
J
UNDERVOLTAGE LOCKOUT UVLO
Input Bias Voltage (VBIAS)
UVLO
2.45 V
RISE
Rising
Input Bias Voltage (VBIAS)
UVLO
2.0 V
FAL L
Falling
Hysteresis UVLO
OUTPUT NOISE OUT
180 mV
HYS
10 Hz to 100 kHz, VIN = 5 V, V
NOISE
10 Hz to 100 kHz, VIN = 5 V, V
10 Hz to 100 kHz, VIN = 3.6 V, V
10 Hz to 100 kHz, VIN = 3.6 V, V
POWER SUPPLY REJECTION RATIO PSRR VIN = 1.8 V, V
100 Hz 70 dB
1 kHz 70 dB
10 kHz 70 dB
100 kHz 60 dB
1 MHz 40 dB
V
= 3.8 V, V
IN
100 Hz 68 dB
1 kHz 62 dB
10 kHz 68 dB
100 kHz 60 dB
1 MHz 40 dB
1
Accuracy when VOUTx is connected directly to FBx. When the VOUTx voltage is set by external feedback resistors, the absolute accuracy in adjust mode depends on
the tolerances of the resistors used.
2
Based on an end-point calculation using 1 mA and 200 mA loads.
3
The dropout voltage specification applies only to output voltages greater than 1.8 V. Dropout voltage is defined as the input-to-output voltage differential when the
input voltage is set to the nominal output voltage.
4
Start-up time is defined as the time between the rising edge of ENx to VOUTx being at 90% of its nominal value.
5
Current-limit threshold is defined as the current at which the output voltage drops to 90% of the specified typical value. For example, the current limit for a 3.0 V
output voltage is defined as the current that causes the output voltage to drop to 90% of 3.0 V, that is, 2.7 V.
≤ 5.5 V 1.2 V
BIAS
≤ 5.5 V 0.4 V
BIAS
1 μA
= 0.8 V, I
OUT
= 2.8 V, I
OUT
or GND,
IN
= 3.3 V 63 μV rms
OUT
= 2.8 V 55 μV rms
OUT
= 2.5 V 50 μV rms
OUT
= 1.2 V 29 μV rms
OUT
= 100 mA
OUT
= 100 mA
OUT
INPUT AND OUTPUT CAPACITOR, RECOMMENDED SPECIFICATIONS
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
MINIMUM INPUT AND OUTPUT CAPACITANCE1 C
CAPACITOR ESR R
1
The minimum input and output capacitance should be greater than 0.70 μF over the full range of operating conditions. The full range of operating conditions in the
application must be considered during device selection to ensure that the minimum capacitance specification is met. X7R and X5R type capacitors are recommended;
Y5V and Z5U capacitors are not recommended for use with LDOs.
TA = −40°C to +125°C 0.70 μF
MIN
T
ESR
Rev. A | Page 4 of 24
= −40°C to +125°C 0.001 1 Ω
A
Data Sheet ADP322/ADP323
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
VIN1/VIN2, VIN3, VBIAS to GND –0.3 V to +6.5 V
VOUT1, VOUT2, FB1, FB2 to GND –0.3 V to VIN1/VIN2
VOUT3, FB3 to GND –0.3 V to VIN3
EN1, EN2, EN3 to GND –0.3 V to +6.5 V
Storage Temperature Range –65°C to +150°C
Operating Junction Temperature Range –40°C to +125°C
Soldering Conditions JEDEC J-STD-020
Junction-to-ambient thermal resistance (θ
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent
on the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θJA may vary, depending
on PCB material, layout, and environmental conditions. The
specified values of θ
circuit board. See JEDEC JESD 51-9 for detailed information
on the board construction. For additional information, see the
AN-617 Application Note, MicroCSP™ Wafer Level Chip Scale
Stresses above those listed under absolute maximum ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination.
The ADP322/ADP323 triple LDO can be damaged when the
junction temperature limits are exceeded. Monitoring ambient
temperature does not guarantee that the junction temperature
(T
) is within the specified temperature limits. In applications
J
with high power dissipation and poor thermal resistance, the
maximum ambient temperature may have to be derated. In
applications with moderate power dissipation and low PCB
Package.
Ψ
is the junction to board thermal characterization parameter
JB
with units of °C/W. Ψ
calculation using a 4-layer board. The JESD51-12, Guidelines for Reporting and Using Package Thermal Information, states that
thermal characterization parameters are not the same as thermal
resistances. Ψ
multiple thermal paths rather than a single path as in thermal
resistance, θ
from the top of the package as well as radiation from the package,
factors that make Ψ
Maximum junction temperature (T
temperature (T
formula:
T
= TB + (PD × ΨJB)
J
See JEDEC JESD51-8 and JESD51-12 for more detailed information about Ψ
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits.
The junction temperature (T
ambient temperature (T
(P
), and the junction-to-ambient thermal resistance of the
D
package (θ
). Maximum junction temperature (TJ) is calculated
JA
from the ambient temperature (T
) of the device is dependent on the
J
), the power dissipation of the device
A
) and power dissipation (PD)
A
THERMAL RESISTANCE
θJA and ΨJB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
Table 4.
Package Type θJA ΨJB Unit
16-Lead, 3 mm × 3 mm LFCSP 49.5 25.2 °C/W
using the following formula:
T
= TA + (PD × θJA)
J
ESD CAUTION
are based on a 4-layer, 4 inch × 3 inch
JA
of the package is based on modeling and
JB
measures the component power flowing through
JB
. Therefore, ΨJB thermal paths include convection
JB
more useful in real-world applications.
JB
) is calculated from the board
J
) and power dissipation (PD) using the following
B
.
JB
) of the package is
JA
Rev. A | Page 5 of 24
ADP322/ADP323 Data Sheet
C
2
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
EN2
EN3
NC
16
1
EN1
2
VBIAS
VIN1/VIN2
NC
NOTES
1. NC = NO CONNE
. CONNECT EXP OSED PAD TO GROUND PLANE.
3
4
ADP322
5
VOUT1
TOP VIEW
(Not to Scale)
T.
Figure 3. ADP322 Pin Configuration
Table 5. ADP322 Pin Function Descriptions
Pin No. Mnemonic Description
1 EN1
Enable Input for Regulator 1. Drive EN1 high to turn on Regulator 1; drive it low to turn off Regulator 1. For
automatic startup, connect EN1 to VBIAS.
2 VBIAS Input Voltage Bias Supply. Bypass VBIAS to GND with a 1 μF or greater capacitor.
3 VIN1/VIN2
Regulator Input Supply for Output Voltage 1 and Output Voltage 2. Bypass VIN1/VIN2 to GND with a 1 μF or
greater capacitor.
4 NC Not connected internally.
5 VOUT1 Regulated Output Voltage 1. Connect a 1 μF or greater output capacitor between VOUT1 and GND.
6 VOUT2 Regulated Output Voltage 2. Connect a 1 μF or greater output capacitor between VOUT2 and GND.
7 NC Not connected internally.
8 VOUT3 Regulated Output Voltage 3. Connect a 1 μF or greater output capacitor between VOUT3 and GND.
9 NC Not connected internally.
10 VIN3 Regulator Input Supply for Output Voltage 3. Bypass VIN3 to GND with a 1 μF or greater capacitor.
11 NC Not connected internally.
12 GND Ground Pin.
13 NC Not connected internally.
14 NC Not connected internally.
15 EN3
Enable Input for Regulator 3. Drive EN3 high to turn on Regulator 3; drive it low to turn off Regulator 3. For
automatic startup, connect EN3 to VBIAS.
16 EN2
Enable Input for Regulator 2. Drive EN3 high to turn on Regulator 2; drive it low to turn off Regulator 2. For
automatic startup, connect EN2 to VBIAS.
EP Exposed pad for enhanced thermal performance. Connect to copper ground plane.
NC
13
15
14
12
GND
11
NC
10
VIN3
9NC
8
7
6
NC
VOUT2
VOUT3
09288-002
Rev. A | Page 6 of 24
Data Sheet ADP322/ADP323
C
2
EN2
EN3
NC
16
1
EN1
2
VBIAS
VIN1/VIN2
FB1
NOTES
1. NC = NO CONNE
. CONNECT EXP OSED PAD TO GROUND PLANE.
3
4
ADP323
5
VOUT1
TOP VIEW
(Not to Scale)
T.
Figure 4. ADP323 Pin Configuration
Table 6. ADP323 Pin Function Descriptions
Pin No. Mnemonic Description
1 EN1
Enable Input for Regulator 1. Drive EN1 high to turn on Regulator 1; drive it low to turn off Regulator 1. For
automatic startup, connect EN1 to VBIAS.
2 VBIAS Input Voltage Bias Supply. Bypass VBIAS to GND with a 1 μF or greater capacitor.
3 VIN1/VIN2
Regulator Input Supply for Output Voltage 1 and Output Voltage 2. Bypass VIN1/VIN2 to GND with a 1 μF or
greater capacitor.
4 FB1 Connect the midpoint of the voltage divider from VOUT1 to GND to set VOUT1.
5 VOUT1 Regulated Output Voltage 1. Connect a 1 μF or greater output capacitor between VOUT1 and GND.
6 VOUT2 Regulated Output Voltage 2. Connect a 1 μF or greater output capacitor between VOUT2 and GND.
7 FB2 Connect the midpoint of the voltage divider from VOUT2 to GND to set VOUT2.
8 VOUT3 Regulated Output Voltage 3. Connect a 1 μF or greater output capacitor between VOUT3 and GND.
9 FB3 Connect the midpoint of the voltage divider from VOUT3 to GND to set VOUT3.
10 VIN3 Regulator Input Supply for Output Voltage 3. Bypass VIN3 to GND with a 1 μF or greater capacitor.
11 NC Not connected internally.
12 GND Ground Pin.
13 NC Not connected internally.
14 NC Not connected internally.
15 EN3
Enable Input for Regulator 3. Drive EN3 high to turn on Regulator 3; drive it low to turn off Regulator 3. For
automatic startup, connect EN3 to VBIAS.
16 EN2
Enable Input for Regulator 2. Drive EN3 high to turn on Regulator 2; drive it low to turn off Regulator 2. For
automatic startup, connect EN2 to VBIAS.
EP Exposed pad for enhanced thermal performance. Connect to copper ground plane.