Fixed (ADP322) and adjustable output (ADP323) options
Bias voltage range (VBIAS): 2.5 V to 5.5 V
LDO input voltage range (VIN1/VIN2, VIN3): 1.8 V to 5.5 V
Three 200 mA low dropout voltage regulators (LDOs)
16-lead, 3 mm × 3 mm LFCSP
Initial accuracy: ±1%
Stable with 1 μF ceramic output capacitors
No noise bypass capacitor required
3 independent logic controlled enables
Overcurrent and thermal protection
Key specifications
High PSRR
76 dB PSRR up to 1 kHz
70 dB PSRR at 10 kHz
60 dB PSRR at 100 kHz
40 dB PSRR at 1 MHz
Low output noise
29 μV rms typical output noise at V
55 μV rms typical output noise at V
Excellent transient response
Low dropout voltage: 110 mV at 200 mA load
85 μA typical ground current at no load, all LDOs enabled
100 μs fast turn-on circuit
Guaranteed 200 mA output current per regulator
−40°C to +125°C junction temperature
APPLICATIONS
Mobile phones
Digital cameras and audio devices
Portable and battery-powered equipment
Portable medical devices
Post dc-to-dc regulation
= 1.2 V
OUT
= 2.8 V
OUT
High PSRR Voltage Regulator
ADP322/ADP323
TYPICAL APPLICATION CIRCUITS
VBIAS
LDO 1
EN LD1
VBIAS
LDO 2
EN LD2
VBIAS
LDO 3
EN LD3
GND
VBIAS
LDO 1
EN LD1
VBIAS
LDO 2
EN LD2
VBIAS
LDO 3
EN LD3
GND
FB1
FB2
FB3
VOUT1
+
1µF
VOUT2
+
1µF
VOUT3
+
1µF
VOUT1
+
1µF
VOUT2
+
1µF
VOUT3
+
1µF
2.5V T
1.8V T
1.8V T
2.5V TO
5.5V
1.8V TO
5.5V
1.8V TO
5.5V
OFF
OFF
OFF
ADP322
ON
ON
ON
5.5V
5.5V
5.5V
VBIAS
VIN1/VIN2
VIN3
+
1µF
+
1µF
EN1
EN2
+
1µF
EN3
Figure 1. Typical Application Circuit for ADP322
VBIAS
VIN1/VIN2
VIN3
+
1µF
+
1µF
EN1
EN2
+
1µF
EN3
ADP323
ON
OFF
ON
OFF
ON
OFF
Figure 2. Typical Application Circuit for ADP323
09288-001
09288-053
GENERAL DESCRIPTION
The ADP322/ADP323 200 mA triple output LDOs combine high
PSRR, low noise, low quiescent current, and low dropout voltage
to extend the battery life of portable devices and are ideally
suited for wireless applications with demanding performance
and board space requirements.
The ADP322/ADP323 PSRR is greater than 60 dB for frequencies
as high as 100 kHz while operating with a low headroom voltage.
The ADP322/ADP323 offer much lower noise performance
than competing LDOs without the need for a noise bypass
capacitor.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
The ADP322/ADP323 are available in a miniature 16-lead,
3 mm × 3 mm LFCSP package and are stable with tiny 1 µF
±30% ceramic output capacitors providing the smallest possible
board area for a wide variety of portable power needs.
The ADP322 is available in output voltage combinations ranging
from 0.8 V to 3.3 V and offers overcurrent and thermal protection
to prevent damage in adverse conditions. The APDP323
adjustable triple LDO can be configured for any output voltage
between 0.5 V and 5 V with two resistors for each output.
EN1 = EN2 = EN3 = GND, TJ = −40°C to +125°C 2.5 μA
FEEDBACK INPUT CURRENT FBIN 0.01 μA
VOLTAGE ACCURACY
LINE REGULATION ∆V
V
LOAD REGULATION2 ∆V
I
DROPOUT VOLTAGE3 V
I
I
I
START-UP TIME4 T
V
V
CURRENT LIMIT THRESHOLD5 I
THERMAL SHUTDOWN
= V
IN1/VIN2
= C
IN
OUT1
IN3
= C
= (V
OUT2
Input Bias Voltage Range V
Input LDO Voltage Range V
Ground Current with All
+ 0.5 V) or 1.8 V (whichever is greater), V
OUT
= C
= 1 µF, and TA = 25°C, unless otherwise noted.
OUT3
T
BIAS
IN1/VIN2/VIN3
I
I
GND
= −40°C to +125°C 2.5 5.5 V
J
TJ = −40°C to +125°C 1.8 5.5 V
OUT
BIAS
= 0 μA 85 μA
Regulators On
= 0 μA, TJ = −40°C to +125°C 160 μA
OUT
= 10 mA 120 μA
OUT
= 10 mA, TJ = −40°C to +125°C 220 μA
OUT
= 200 mA 250 μA
OUT
= 200 mA, TJ = −40°C to +125°C 380 μA
OUT
Bias Voltage Input Current I
Shutdown Current I
Output Voltage Accuracy
66 μA
BIAS
= −40°C to +125°C 140 μA
J
EN1 = EN2 = EN3 = GND 0.1 μA
GND-SD
−1 +1 %
V
OUT
(ADP322)
0.495 0.5 0.505 V
Feedback Voltage Accuracy
(ADP323)
1
V
FB
100 μA < I
T
= −40°C to +125°C
J
100 μA < I
= −40°C to +125°C
T
J
/∆VIN VIN = (V
OUT
= (V
IN
/∆I
I
OUT
OUT
DROPOUT
V
START-UP
= 1 mA to 200 mA 0.001 %/mA
OUT
= 1 mA to 200 mA, TJ = −40°C to +125°C 0.005 %/mA
OUT
V
= 3.3 V mV
OUT
I
= 10 mA 6 mV
OUT
= 10 mA, TJ = −40°C to +125°C 9 mV
OUT
= 200 mA 110 mV
OUT
= 200 mA, TJ = −40°C to +125°C 170 mV
OUT
= 3.3 V, all V
OUT
= 0.8 V 100 μs
OUT
= 3.3 V, one V
V
OUT
< 200 mA, VIN = (V
OUT
< 200 mA, VIN = (V
OUT
+ 0.5 V) to 5.5 V 0.01 %/ V
OUT
+ 0.5 V) to 5.5 V, TJ = −40°C to +125°C −0.03 +0.03 %/ V
OUT
OUT
third LDO
= 0.8 V 20 μs
OUT
250 360 600 mA
LIMIT
Thermal Shutdown Threshold TSSD T
Thermal Shutdown Hysteresis TS
15 °C
SD-HYS
rising 155 °C
J
= 2.5 V, EN1, EN2, EN3 = V
+ 0.5 V) to 5.5 V,
OUT
+ 0.5 V) to 5.5 V,
OUT
, I
= I
= I
BIAS
OUT1
OUT2
= 10 mA,
OUT3
−2 +2 %
0.490 0.510 V
initially off, enable any LDO 240 μs
initially on, enable second or
OUT
160 μs
Rev. A | Page 3 of 24
ADP322/ADP323 Data Sheet
Parameter Symbol Conditions Min Typ Max Unit
EN INPUT
EN Input Logic High VIH 2.5 V ≤ V
EN Input Logic Low VIL 2.5 V ≤ V
EN Input Leakage Current V
EN1 = EN2 = EN3 = VIN or GND 0.1 μA
I-LEAKAGE
EN1 = EN2 = EN3 = V
= −40°C to +125°C
T
J
UNDERVOLTAGE LOCKOUT UVLO
Input Bias Voltage (VBIAS)
UVLO
2.45 V
RISE
Rising
Input Bias Voltage (VBIAS)
UVLO
2.0 V
FAL L
Falling
Hysteresis UVLO
OUTPUT NOISE OUT
180 mV
HYS
10 Hz to 100 kHz, VIN = 5 V, V
NOISE
10 Hz to 100 kHz, VIN = 5 V, V
10 Hz to 100 kHz, VIN = 3.6 V, V
10 Hz to 100 kHz, VIN = 3.6 V, V
POWER SUPPLY REJECTION RATIO PSRR VIN = 1.8 V, V
100 Hz 70 dB
1 kHz 70 dB
10 kHz 70 dB
100 kHz 60 dB
1 MHz 40 dB
V
= 3.8 V, V
IN
100 Hz 68 dB
1 kHz 62 dB
10 kHz 68 dB
100 kHz 60 dB
1 MHz 40 dB
1
Accuracy when VOUTx is connected directly to FBx. When the VOUTx voltage is set by external feedback resistors, the absolute accuracy in adjust mode depends on
the tolerances of the resistors used.
2
Based on an end-point calculation using 1 mA and 200 mA loads.
3
The dropout voltage specification applies only to output voltages greater than 1.8 V. Dropout voltage is defined as the input-to-output voltage differential when the
input voltage is set to the nominal output voltage.
4
Start-up time is defined as the time between the rising edge of ENx to VOUTx being at 90% of its nominal value.
5
Current-limit threshold is defined as the current at which the output voltage drops to 90% of the specified typical value. For example, the current limit for a 3.0 V
output voltage is defined as the current that causes the output voltage to drop to 90% of 3.0 V, that is, 2.7 V.
≤ 5.5 V 1.2 V
BIAS
≤ 5.5 V 0.4 V
BIAS
1 μA
= 0.8 V, I
OUT
= 2.8 V, I
OUT
or GND,
IN
= 3.3 V 63 μV rms
OUT
= 2.8 V 55 μV rms
OUT
= 2.5 V 50 μV rms
OUT
= 1.2 V 29 μV rms
OUT
= 100 mA
OUT
= 100 mA
OUT
INPUT AND OUTPUT CAPACITOR, RECOMMENDED SPECIFICATIONS
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
MINIMUM INPUT AND OUTPUT CAPACITANCE1 C
CAPACITOR ESR R
1
The minimum input and output capacitance should be greater than 0.70 μF over the full range of operating conditions. The full range of operating conditions in the
application must be considered during device selection to ensure that the minimum capacitance specification is met. X7R and X5R type capacitors are recommended;
Y5V and Z5U capacitors are not recommended for use with LDOs.
TA = −40°C to +125°C 0.70 μF
MIN
T
ESR
Rev. A | Page 4 of 24
= −40°C to +125°C 0.001 1 Ω
A
Data Sheet ADP322/ADP323
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
VIN1/VIN2, VIN3, VBIAS to GND –0.3 V to +6.5 V
VOUT1, VOUT2, FB1, FB2 to GND –0.3 V to VIN1/VIN2
VOUT3, FB3 to GND –0.3 V to VIN3
EN1, EN2, EN3 to GND –0.3 V to +6.5 V
Storage Temperature Range –65°C to +150°C
Operating Junction Temperature Range –40°C to +125°C
Soldering Conditions JEDEC J-STD-020
Junction-to-ambient thermal resistance (θ
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent
on the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θJA may vary, depending
on PCB material, layout, and environmental conditions. The
specified values of θ
circuit board. See JEDEC JESD 51-9 for detailed information
on the board construction. For additional information, see the
AN-617 Application Note, MicroCSP™ Wafer Level Chip Scale
Stresses above those listed under absolute maximum ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination.
The ADP322/ADP323 triple LDO can be damaged when the
junction temperature limits are exceeded. Monitoring ambient
temperature does not guarantee that the junction temperature
(T
) is within the specified temperature limits. In applications
J
with high power dissipation and poor thermal resistance, the
maximum ambient temperature may have to be derated. In
applications with moderate power dissipation and low PCB
Package.
Ψ
is the junction to board thermal characterization parameter
JB
with units of °C/W. Ψ
calculation using a 4-layer board. The JESD51-12, Guidelines for Reporting and Using Package Thermal Information, states that
thermal characterization parameters are not the same as thermal
resistances. Ψ
multiple thermal paths rather than a single path as in thermal
resistance, θ
from the top of the package as well as radiation from the package,
factors that make Ψ
Maximum junction temperature (T
temperature (T
formula:
T
= TB + (PD × ΨJB)
J
See JEDEC JESD51-8 and JESD51-12 for more detailed information about Ψ
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits.
The junction temperature (T
ambient temperature (T
(P
), and the junction-to-ambient thermal resistance of the
D
package (θ
). Maximum junction temperature (TJ) is calculated
JA
from the ambient temperature (T
) of the device is dependent on the
J
), the power dissipation of the device
A
) and power dissipation (PD)
A
THERMAL RESISTANCE
θJA and ΨJB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
Table 4.
Package Type θJA ΨJB Unit
16-Lead, 3 mm × 3 mm LFCSP 49.5 25.2 °C/W
using the following formula:
T
= TA + (PD × θJA)
J
ESD CAUTION
are based on a 4-layer, 4 inch × 3 inch
JA
of the package is based on modeling and
JB
measures the component power flowing through
JB
. Therefore, ΨJB thermal paths include convection
JB
more useful in real-world applications.
JB
) is calculated from the board
J
) and power dissipation (PD) using the following
B
.
JB
) of the package is
JA
Rev. A | Page 5 of 24
ADP322/ADP323 Data Sheet
C
2
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
EN2
EN3
NC
16
1
EN1
2
VBIAS
VIN1/VIN2
NC
NOTES
1. NC = NO CONNE
. CONNECT EXP OSED PAD TO GROUND PLANE.
3
4
ADP322
5
VOUT1
TOP VIEW
(Not to Scale)
T.
Figure 3. ADP322 Pin Configuration
Table 5. ADP322 Pin Function Descriptions
Pin No. Mnemonic Description
1 EN1
Enable Input for Regulator 1. Drive EN1 high to turn on Regulator 1; drive it low to turn off Regulator 1. For
automatic startup, connect EN1 to VBIAS.
2 VBIAS Input Voltage Bias Supply. Bypass VBIAS to GND with a 1 μF or greater capacitor.
3 VIN1/VIN2
Regulator Input Supply for Output Voltage 1 and Output Voltage 2. Bypass VIN1/VIN2 to GND with a 1 μF or
greater capacitor.
4 NC Not connected internally.
5 VOUT1 Regulated Output Voltage 1. Connect a 1 μF or greater output capacitor between VOUT1 and GND.
6 VOUT2 Regulated Output Voltage 2. Connect a 1 μF or greater output capacitor between VOUT2 and GND.
7 NC Not connected internally.
8 VOUT3 Regulated Output Voltage 3. Connect a 1 μF or greater output capacitor between VOUT3 and GND.
9 NC Not connected internally.
10 VIN3 Regulator Input Supply for Output Voltage 3. Bypass VIN3 to GND with a 1 μF or greater capacitor.
11 NC Not connected internally.
12 GND Ground Pin.
13 NC Not connected internally.
14 NC Not connected internally.
15 EN3
Enable Input for Regulator 3. Drive EN3 high to turn on Regulator 3; drive it low to turn off Regulator 3. For
automatic startup, connect EN3 to VBIAS.
16 EN2
Enable Input for Regulator 2. Drive EN3 high to turn on Regulator 2; drive it low to turn off Regulator 2. For
automatic startup, connect EN2 to VBIAS.
EP Exposed pad for enhanced thermal performance. Connect to copper ground plane.
NC
13
15
14
12
GND
11
NC
10
VIN3
9NC
8
7
6
NC
VOUT2
VOUT3
09288-002
Rev. A | Page 6 of 24
Data Sheet ADP322/ADP323
C
2
EN2
EN3
NC
16
1
EN1
2
VBIAS
VIN1/VIN2
FB1
NOTES
1. NC = NO CONNE
. CONNECT EXP OSED PAD TO GROUND PLANE.
3
4
ADP323
5
VOUT1
TOP VIEW
(Not to Scale)
T.
Figure 4. ADP323 Pin Configuration
Table 6. ADP323 Pin Function Descriptions
Pin No. Mnemonic Description
1 EN1
Enable Input for Regulator 1. Drive EN1 high to turn on Regulator 1; drive it low to turn off Regulator 1. For
automatic startup, connect EN1 to VBIAS.
2 VBIAS Input Voltage Bias Supply. Bypass VBIAS to GND with a 1 μF or greater capacitor.
3 VIN1/VIN2
Regulator Input Supply for Output Voltage 1 and Output Voltage 2. Bypass VIN1/VIN2 to GND with a 1 μF or
greater capacitor.
4 FB1 Connect the midpoint of the voltage divider from VOUT1 to GND to set VOUT1.
5 VOUT1 Regulated Output Voltage 1. Connect a 1 μF or greater output capacitor between VOUT1 and GND.
6 VOUT2 Regulated Output Voltage 2. Connect a 1 μF or greater output capacitor between VOUT2 and GND.
7 FB2 Connect the midpoint of the voltage divider from VOUT2 to GND to set VOUT2.
8 VOUT3 Regulated Output Voltage 3. Connect a 1 μF or greater output capacitor between VOUT3 and GND.
9 FB3 Connect the midpoint of the voltage divider from VOUT3 to GND to set VOUT3.
10 VIN3 Regulator Input Supply for Output Voltage 3. Bypass VIN3 to GND with a 1 μF or greater capacitor.
11 NC Not connected internally.
12 GND Ground Pin.
13 NC Not connected internally.
14 NC Not connected internally.
15 EN3
Enable Input for Regulator 3. Drive EN3 high to turn on Regulator 3; drive it low to turn off Regulator 3. For
automatic startup, connect EN3 to VBIAS.
16 EN2
Enable Input for Regulator 2. Drive EN3 high to turn on Regulator 2; drive it low to turn off Regulator 2. For
automatic startup, connect EN2 to VBIAS.
EP Exposed pad for enhanced thermal performance. Connect to copper ground plane.
Figure 28. Output Voltage vs. Input Voltage (in Dropout),
= 1.8 V
V
OUT2
Rev. A | Page 11 of 24
ADP322/ADP323 Data Sheet
A
√
160
140
120
100
80
60
GROUND CURRENT (µA)
LOAD = 1mA
40
LOAD = 5mA
LOAD = 10mA
LOAD = 50mA
20
LOAD = 100mA
LOAD = 200mA
0
1.701.801.902.002.10
V
(V)
IN
Figure 29. Ground Current vs. Input Voltage (in Dropout), V
0
200mA
100mA
–10
10mA
1mA
–20
–30
–40
–50
PSRR (dB)
–60
–70
–80
–90
–100
101001k10k100k1M10M
FREQUENCY ( Hz)
V
RIPPLE
V
IN
V
OUT
C
OUT
= 2.8V
= 1.8V
= 1µF
= 50mV
Figure 30. Power Supply Rejection Ratio vs. Frequency, 1.8 V
0
200mA
100mA
–10
10mA
1mA
–20
–30
–40
–50
PSRR (dB)
–60
–70
–80
–90
–100
101001k10k100k1M10M
FREQUENCY (Hz)
V
RIPPLE
V
IN
V
OUT
C
OUT
= 4.3V
= 3.3V
= 1µF
= 50mV
Figure 31. Power Supply Rejection Ratio vs. Frequency, 3.3 V
OUT2
= 1.8 V
09288-027
09288-028
09288-029
0
V
= 50mV
RIPPLE
V
= 2.5V
IN
–10
V
= 1.5V
OUT
C
= 1µF
OUT
–20
–30
–40
–50
PSRR (dB)
–60
–70
–80
–90
–100
101001k10k100k1M10M
FREQUENCY ( Hz)
Figure 32. Power Supply Rejection Ratio vs. Frequency, 1.5 V
0
1.8V/200mA
1.8V/100mA
–10
1.8V/10mA
1.2V/200mA
–20
1.2V/100mA
1.2V/10mA
–30
–40
–50
PSRR (dB)
–60
–70
–80
–90
–100
101001k10k100k1M10M
FREQUENCY (Hz)
V
RIPPLE
1V HEADROOM
1.8V PSRR
1.2 XTALK
Figure 33. Power Supply Rejection Ratio vs. Frequency,
Channel-to-Channel Crosstalk
10
Hz)
1
L DENSITY (nV/
0.1
NOISE SPECTR
0.01
101001k10k100k
FREQUENCY ( Hz)
Figure 34. Output Noise Spectral Density vs. Frequency, V
= 10 mA
I
LOAD
200mA
100mA
10mA
1mA
= 50mV
3.3V
1.8V
1.5V
IN
= 5 V,
09288-030
09288-031
09288-032
Rev. A | Page 12 of 24
Data Sheet ADP322/ADP323
70
3.3V
1.8V
1.5V
60
1
50
40
I
LOAD2
30
NOISE (µV rms)
20
10
0
0.0010.010.1110100
LOAD CURRENT (mA)
Figure 35. Output Noise vs. Load Current and Output Voltage, V
I
LOAD1
1
2
3
4
V
OUT1
V
OUT2
V
OUT3
CH1 100mACH2 50mV
CH3 10mVCH4 10mV
B
Ω
W
B
W
B
M40µs A CH1 44mA
W
B
T 9.8%
W
Figure 36. Load Transient Response,
= 1 mA to 200 mA, I
I
LOAD1
CH1 = I
LOAD1
, CH2 = V
OUT1
LOAD2
, CH3 = V
= I
LOAD3
OUT2
= 1 mA,
, CH4 = V
OUT3
1000
= 5 V
IN
V
CH2
LOAD2
I
LOAD3
V
OUT2
B
W
T 10.4%
= 1 mA to 200 mA, C
LOAD2
, CH2 = V
OUT3
B
W
T 10.2%
OUT2
09288-036
= 1 μF,
OUT2
09288-037
2
CH1 200mA50mVM40 µs A CH1 84mA
09288-033
B
Ω
W
Figure 38. Load Transient Response, I
CH1 = I
1
2
09288-034
CH1 200mACH2 50mVM40 µs A CH1 124mA
B
Ω
W
Figure 39. Load Transient Response,
= 1 mA to 200 mA, C
I
LOAD3
CH1 = I
LOAD3
, CH2 = V
OUT3
OUT3
= 1 μF,
I
LOAD1
1
V
CH2
50mV
OUT1
B
W
T 10.2%
2
CH1 200mAM40µs A CH1 124mA
B
Ω
W
Figure 37. Load Transient Response,
= 1 mA to 200 mA, C
I
LOAD1
CH1 = I
LOAD1
, CH2 = V
OUT1
OUT1
= 1 μF,
09288-035
Rev. A | Page 13 of 24
V
IN
1
V
V
V
OUT1
OUT2
OUT3
B
W
B
W
T 15%
2
3
4
CH1 1VCH2 10mVM1µsA CH1 4.62V
CH3 10mV
B
W
B
W
CH4 10mV
Figure 40. Line Transient Response,
= 4 V to 5 V, I
V
IN
CH1 = V
, CH2 = V
IN
LOAD1
OUT1
= I
LOAD2
, CH3 = V
= I
LOAD3
OUT2
=100 mA,
, CH4 = V
OUT3
09288-038
ADP322/ADP323 Data Sheet
V
IN
1
V
V
V
OUT1
OUT2
OUT3
2
3
4
V
ENx
1
2
V
V
V
OUT1
OUT2
OUT3
10mV
B
CH2
W
B
CH4
W
CH1 1V10mVM2µsA CH1 4.58V
CH3
10mV
B
W
B
W
T 12%
Figure 41. Line Transient Response,
= 4 V to 5 V, I
V
IN
CH1 = V
, CH2 = V
IN
LOAD1
OUT1
= I
LOAD2
, CH3 = V
= I
OUT2
=1 mA,
LOAD3
, CH4 = V
OUT3
B
CH1 1V500mVM100µs A CH1 540mV
CH3
09288-039
500mV
W
B
W
CH2
CH4 500mV
Figure 42. Turn-On Response, I
CH1 = V
(the Enable Voltage), CH2 = V
ENx
B
B
CH4 = V
W
W
LOAD1
OUT3
T 10.2%
= I
LOAD2
= I
LOAD3
, CH3 = V
OUT1
=100 mA,
OUT2
09288-040
,
Rev. A | Page 14 of 24
Data Sheet ADP322/ADP323
V
V
V
2.5V
V
V
THEORY OF OPERATION
The ADP322/ADP323 triple LDO are low quiescent current, low
dropout linear regulators that operate from 1.8 V to 5.5 V on
VIN1/VIN2 and VIN3 and provide up to 200 mA of current from
each output. Drawing a low 250 A quiescent current (typical) at
full load makes the ADP322/ADP323 ideal for battery-operated
portable equipment. Shutdown current consumption is typically
100 nA. Optimized for use with small 1 µF ceramic capacitors,
the ADP322/ADP323 provide excellent transient performance.
Internally, the ADP322 consists of a reference, three error amplifiers, three feedback voltage dividers, and three PMOS pass
transistors. Output current is delivered via the PMOS pass device,
which is controlled by the error amplifier. The error amplifier
compares the reference voltage with the feedback voltage from the
output and amplifies the difference. If the feedback voltage is lower
than the reference voltage, the gate of the PMOS device is pulled
lower, allowing more current to flow and increasing the output voltage. If the feedback voltage is higher than the reference voltage, the
gate of the PMOS device is pulled higher, allowing less current
to flow and decreasing the output voltage.
VIN1/VIN2
VBIAS
EN1
EN2
EN3
VIN3
GND
INTERNAL BI AS
VOLTAGE S/CURRENTS,
UVLO AND THERM AL
PROTECT
SHUTDOWN
VOUT1
SHUTDOWN
VOUT2
SHUTDOWN
VOUT3
OVERCURRENT
OVERCURRENT
OVERCURRENT
0.5V
REF
0.5V
REF
0.5V
REF
Figure 43. ADP322 Internal Block Diagram
+
–
+
–
+
–
OUT1
OUT2
OUT3
09288-041
The ADP323 differs from the ADP322 except in that the output
voltage dividers are internally disconnected and the feedback
inputs of the error amplifiers are brought out for each output.
VIN1/VIN2
VOUT1
The output voltage can be set using the following formulas:
V
= 0.5 V(1 + R1/R2) + (FBIN)(R1)
OUT
V
= 0.5 V(1 + R3/R4) + (FBIN)(R3)
OUT2
= 0.5 V(1 + R5/R6) + (FBIN)(R5)
V
OUT3
The value of R1, R3, R5 should be less than 200 k to minimize
errors in the output voltage caused by the FBx pin input
current. For example, when R1 and R2 each equal 200 k, the
output voltage is 1.0 V. The output voltage error introduced by
the FBx pin input current is 2 mV or 0.20%, assuming a typical
FBx pin input current of 10 nA at 25°C.
The ADP322 is available in multiple output voltage options
ranging from 0.8 V to 3.3 V.
The ADP322/ADP323 use the EN1/EN2 and EN3 pins to
enable and disable the VOUT1/VOUT2/VOUT3 pins under
normal operating conditions. When the EN1/EN2 and EN3
pins are high, VOUT1/VOUT2/VOUT3 turn on; when the
EN1/EN2 and EN3 pins are low, VOUT1/VOUT2/VOUT3 turn
off. For automatic startup, the EN1/EN2 and EN3 pins can be
tied to VBIAS.
ADP323
VBIAS
LDO 1
EN LD1
VBIAS
LDO 2
EN LD2
VBIAS
LDO 3
EN LD3
GND
FB1
FB2
FB3
VOUT1
+
R1
1µF
R2
VOUT2
+
R3
1µF
R4
VOUT3
+
R5
1µF
R6
9288-145
1.8
1.8
TO
5.5V
TO
5.5V
TO
5.5V
+
1µF
+
1µF
+
1µF
VBIAS
VIN1/VIN2
EN1
OFF
EN2
OFF
VIN3
EN3
OFF
ON
ON
ON
Figure 45. ADP323 Application Circuit Diagram
0.5V
REF
0.5V
REF
0.5V
REF
+
–
+
–
+
–
INTERNAL BI AS
EN1
EN2
EN3
VIN3
GND
VOLTAG ES/CURRENTS,
UVLO AND THERM AL
PROTECT
SHUTDOWN
VOUT1
SHUTDOWN
VOUT2
SHUTDOWN
VOUT3
Figure 44. ADP323 Internal Block Diagram
VBIAS
OVERCURRENT
OVERCURRENT
OVERCURRENT
FB1
VOUT2
FB2
VOUT3
FB3
9288-055
Rev. A | Page 15 of 24
ADP322/ADP323 Data Sheet
APPLICATIONS INFORMATION
CAPACITOR SELECTION
Output Capacitor
The ADP322/ADP323 are designed for operation with small,
space-saving ceramic capacitors, but the parts function with
most commonly used capacitors as long as care is taken with
the effective series resistance (ESR) value. The ESR of the
output capacitor affects the stability of the LDO control loop.
A minimum of 0.70 µF capacitance with an ESR of 1 Ω or less is
recommended to ensure the stability of the ADP322/ADP323.
Transient response to changes in load current is also affected by
output capacitance. Using a larger value of output capacitance
improves the transient response of the ADP322/ADP323 to large
changes in the load current. Figure 46 shows the transient
response for an output capacitance value of 1 µF.
I
LOAD1
1
V
2
3
4
CH1 100mA ΩCH2 50mV
B
W
B
CH4 10mVCH3 10mV
W
Figure 46. Output Transient Response,
= 1 mA to 200 mA, I
I
LOAD1
CH1 = I
LOAD1
, CH2 = V
OUT1
V
OUT2
V
OUT3
B
M40µsA CH1 44mA
W
B
T 9.8%
W
= 1 mA, I
LOAD2
, CH3 = V
OUT1
OUT2
= 1 mA,
LOAD3
, CH4 = V
OUT3
09288-042
Input Bypass Capacitor
Connecting a 1 µF capacitor from VIN1/VIN2, VIN3, and
VBIAS to GND reduces the circuit sensitivity to the PCB layout,
especially when long input traces or high source impedance is
encountered. If an output capacitance greater than 1 µF is
required, the input capacitor should be increased to match it.
Input and Output Capacitor Properties
Any good quality ceramic capacitor can be used with the ADP322/
ADP323, as long as the capacitor meets the minimum capacitance and maximum ESR requirements. Ceramic capacitors are
manufactured with a variety of dielectrics, each with a different
behavior over temperature and applied voltage. Capacitors must
have an adequate dielectric to ensure the minimum capacitance
over the necessary temperature range and dc bias conditions.
X5R or X7R dielectrics with a voltage rating of 6.3 V or 10 V are
recommended. Y5V and Z5U dielectrics are not recommended
due to their poor temperature and dc bias characteristics.
Figure 47 depicts the capacitance vs. voltage bias characteristic
of a 0402 1 µF, 10 V, X5R capacitor. The voltage stability of a
capacitor is strongly influenced by the capacitor size and voltage
rating. In general, a capacitor in a larger package or with a higher
voltage rating exhibits better stability. The temperature variation
of the X5R dielectric is about ±15% over the −40°C to +85°C
temperature range and is not a function of the package or
voltage rating.
1.2
1.0
0.8
Rev. A | Page 16 of 24
0.6
0.4
CAPACITANCE (µF )
0.2
0
024681
VOLTAGE (V)
Figure 47. Capacitance vs. Voltage Bias Characteristic
0
09288-043
Data Sheet ADP322/ADP323
Use Equation 1 to determine the worst-case capacitance,
accounting for capacitor variation over temperature, component tolerance, and voltage.
C
= C
EFF
× (1 − TEMPCO) × (1 − TOL) (1)
BIAS
where:
C
is the effective capacitance at the operating voltage.
BIAS
TEMPCO is the worst-case capacitor temperature coefficient.
TOL is the worst-case component tolerance.
In this example, TEMPCO over −40°C to +85°C is assumed
to be 15% for an X5R dielectric. TOL is assumed to be 10%,
and C
is 0.94 F at 1.8 V (from the graph in Figure 47).
BIAS
Substituting these values into Equation 1 yields
C
= 0.94 F × (1 − 0.15) × (1 − 0.1) = 0.719 F
EFF
Therefore, the capacitor chosen in this example meets the minimum capacitance requirement of the LDO over temperature
and tolerance at the chosen output voltage.
To guarantee the performance of the ADP322/ADP323 triple
LDO, it is imperative that the effects of dc bias, temperature,
and tolerances on the behavior of the capacitors be evaluated
for each application.
UNDERVOLTAGE LOCKOUT
The ADP322/ADP323 have an internal undervoltage lockout
circuit that disables all inputs and the output when the input
voltage bias, VBIAS, is less than approximately 2.2 V. This
ensures that the inputs of the ADP322/ADP323 and the output
behave in a predictable manner during power-up.
ENABLE FEATURE
The ADP322/ADP323 use the ENx pins to enable and disable
the VOUTx pins under normal operating conditions. Figure 48
shows that, when a rising voltage on ENx crosses the active
threshold, VOUTx turns on. When a falling voltage on ENx
crosses the inactive threshold, VOUTx turns off.
1.4
V
@ 4.5V
OUT
1.2
IN
As shown in Figure 48, the ENx pin has built-in hysteresis. This
prevents on/off oscillations that can occur due to noise on the
ENx pin as it passes through the threshold points.
The active/inactive thresholds of the ENx pin are derived
from the V
voltage. Therefore, these thresholds vary with
BIAS
changing input voltage. Figure 49 shows typical ENx active/
inactive thresholds when the input voltage varies from 2.5 V
to 5.5 V (note that V
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
ENABLE THRESHOLDS
0.60
0.55
0.50
V
2.53.03.54.04.55.05.5
Figure 49. Typical ENx Pins Thresholds vs. Input Voltage
is the enable voltage).
ENx
RISE
ENx
INPUT VOLTAGE (V)
V
FALL
ENx
09288-045
The ADP322/ADP323 use an internal soft start to limit the
inrush current when the output is enabled. The start-up time
for the 2.8 V option is approximately 220 µs from the time the
ENx active threshold is crossed to when the output reaches 90%
of its final value. The start-up time is somewhat dependent on
the output voltage setting and increases slightly as the output
voltage increases.
V
ENx
1
V
V
V
OUT1
OUT2
OUT3
1.0
0.8
(V)
0.6
OUT
V
0.4
0.2
0
0.40.60.50.70.90.81.01.11.2
ENABLE VOLTAGE (V)
Figure 48. Typical ENx Pin Operation
09288-044
Rev. A | Page 17 of 24
2
B
CH1 1V500mVM100µs A CH1 540mV
500mV
CH3
W
B
W
CH2
CH4 500mV
Figure 50. Typical Start-Up Time,I
CH1 = V
(the Enable Voltage), CH2 = V
ENx
B
W
B
W
T 10.2%
= I
OUT1
= I
LOAD2
, CH3 = V
LOAD1
= 100 mA,
LOAD3
OUT2
, CH4 = V
09288-046
OUT3
ADP322/ADP323 Data Sheet
CURRENT-LIMIT AND THERMAL OVERLOAD
PROTECTION
The ADP322/ADP323 are protected against damage due to
excessive power dissipation by current and thermal overload
protection circuits. The ADP322/ADP323 are designed to
current limit when the output load reaches 300 mA (typical).
When the output load exceeds 300 mA, the output voltage is
reduced to maintain a constant current limit.
Thermal overload protection is built in, which limits the
junction temperature to a maximum of 155°C (typical). Under
extreme conditions (that is, high ambient temperature and
power dissipation) when the junction temperature starts to
rise above 155°C, the output is turned off, reducing the output
current to zero. When the junction temperature drops below
140°C, the output is turned on again and the output current
is restored to its nominal value.
Consider the case where a hard short from VOUTx to GND
occurs. At first, the ADP322/ADP323 limits current so that only
300 mA is conducted into the short. If self-heating of the junction
is great enough to cause its temperature to rise above 155°C,
thermal shutdown activates, turning off the output and
reducing the output current to zero. As the junction temperature cools and drops below 140°C, the output turns on and
conducts 300 mA into the short, again causing the junction
temperature to rise above 155°C. This thermal oscillation
between 140°C and 155°C causes a current oscillation between
0 mA and 300 mA that continues as long as the short remains
at the output.
Current and thermal limit protections are intended to protect
the device against accidental overload conditions. For reliable
operation, device power dissipation must be externally limited
so that junction temperatures do not exceed 125°C.
THERMAL CONSIDERATIONS
In most applications, the ADP322/ADP323 do not dissipate a
lot of heat due to high efficiency. However, in applications with
a high ambient temperature and high supply voltage to output
voltage differential, the heat dissipated in the package is large
enough that it can cause the junction temperature of the die to
exceed the maximum junction temperature of 125°C.
When the junction temperature exceeds 155°C, the converter
enters thermal shutdown. It recovers only after the junction
temperature decreases below 140°C to prevent any permanent
damage. Therefore, thermal analysis for the chosen application
is very important to guarantee reliable performance over all
conditions. The junction temperature of the die is the sum of
the ambient temperature of the environment and the temperature rise of the package due to the power dissipation, as shown
in Equation 2.
To guarantee reliable operation, the junction temperature of
the ADP322/ADP323 must not exceed 125°C. To ensure that
the junction temperature stays below this maximum value, the
user must be aware of the parameters that contribute to junction
temperature changes. These parameters include ambient temperature, power dissipation in the power device, and thermal
resistances between the junction and ambient air (θ
). The θJA
JA
number is dependent on the package assembly compounds used
and the amount of copper to which the GND pins of the package
are soldered on the PCB. Ta b le 7 shows typical θ
values for the
JA
ADP322/ADP323 for various PCB copper sizes.
Table 7. Typical θ
Values
JA
Copper Size (mm2) ADP322/ADP323 Triple LDO (°C/W)
JEDEC1 49.5
100 83.7
500 68.5
1000 64.7
1
Device soldered to JEDEC standard board.
The junction temperature of the ADP322/ADP323 can be
calculated from the following equation:
T
= TA + (PD × θJA) (2)
J
where:
T
is the ambient temperature.
A
P
is the power dissipation in the die, given by
D
P
= Σ[(VIN − V
D
OUT
) × I
] + Σ(VIN × I
LOAD
) (3)
GND
where:
I
is the load current.
LOAD
I
is the ground current.
GND
V
and V
IN
are input and output voltages, respectively.
OUT
Power dissipation due to ground current is quite small and
can be ignored. Therefore, the junction temperature equation
simplifies to
T
= TA + {Σ[(VIN − V
J
OUT
) × I
] × θJA} (4)
LOAD
As shown in Equation 4, for a given ambient temperature,
input-to-output voltage differential, and continuous load
current, there exists a minimum copper size requirement
for the PCB to ensure that the junction temperature does not
rise above 125°C. Figure 51 to Figure 54 show junction
temperature calculations for different ambient temperatures,
total power dissipation, and areas of PCB copper.
In cases where the board temperature is known, the thermal
characterization parameter, Ψ
junction temperature rise. T
, can be used to estimate the
JB
is calculated from TB and PD using
J
the formula
T
= TB + (PD × ΨJB) (5)
J
The typical Ψ
value for the 16-lead, 3 mm × 3 mm LFCSP is
JB
25.2°C/W.
Rev. A | Page 18 of 24
Data Sheet ADP322/ADP323
A
R
A
A
A
140
120
(°C)
J
100
TURE, T
80
60
40
JUNCTION TEM PER
20
0
00.20.40.60. 81.01.2
TOTAL POWER DISSIPATION (W)
Figure 51. Junction Temperature vs. Total Power Dissipation, T
140
120
(°C)
J
100
TURE, T
80
60
1000mm
500mm
100mm
50mm
JEDEC
T
MAX
J
2
2
2
2
= 25°C
A
140
120
(°C)
J
100
TURE, T
80
60
40
JUNCTION TEMPER
20
0
00.20.40.60.81.01.2
09288-047
TOTAL POWER DISSIPATION (W )
Figure 53. Junction Temperature vs. Total Power Dissipation, T
140
120
(°C)
J
100
TURE, T
80
60
1000mm
500mm
100mm
50mm
JEDEC
T
MAX
J
2
2
2
2
= 85°C
A
09288-049
40
JUNCTION TEM PE
20
0
00.20.40.6
TOTAL POWER DISSIPATION (W)
0.81. 0
1000mm
500mm
100mm
50mm
JEDEC
T
MAX
J
Figure 52. Junction Temperature vs. Total Power Dissipation, T
2
2
2
2
1.2
= 50°C
A
40
JUNCTION TEMPER
20
0
00.20.40.60.81.01.21.41.61.8
09288-048
TOTAL POWER DISSIPATION (W)
TB = 25°C
T
= 50°C
B
T
= 85°C
B
T
MAX
J
09288-050
Figure 54. Junction Temperature vs. Total Power Dissipation and
Board Temperature
Rev. A | Page 19 of 24
ADP322/ADP323 Data Sheet
PRINTED CIRCUIT BOARD LAYOUT
CONSIDERATIONS
Heat dissipation from the package can be improved by
increasing the amount of copper attached to the pins of the
ADP322/ADP323. However, as can be seen from Tabl e 7, a
point of diminishing returns is eventually reached, beyond
which an increase in the copper size does not yield significant
heat dissipation benefits.
Place the input capacitor as close as possible to the VINx and
GND pins. Place the output capacitors as close as possible to
the VOUTx and GND pins. Use 0402 or 0603 size capacitors
and resistors to achieve the smallest possible footprint solution
on boards where area is limited.
09288-051
Figure 55. Example of PCB Layout, Top Side
09288-052
Figure 56. Example of PCB Layout, Bottom Side
Rev. A | Page 20 of 24
Data Sheet ADP322/ADP323
OUTLINE DIMENSIONS
PIN 1
INDICATOR
0.80
0.75
0.70
SEATING
PLANE
3.10
3.00 SQ
2.90
0.50
BSC
0.50
0.40
0.30
0.05 MAX
0.02 NOM
0.20 REF
0.30
0.25
0.20
13
12
9
8
BOTTOM VIEWTOP VIEW
COPLANARITY
0.08
1
P
N
I
C
I
N
I
D
16
1
EXPOSED
PAD
5
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
1.65
1.50 SQ
1.45
4
0.20 MIN
R
A
O
T
COMPLIANTTOJEDEC STANDARDS MO-229.
091609-A
Figure 57. 16-Lead Lead Frame Chip Scale Package [LFCSP_WQ]
3 mm × 3 mm Body, Very, Very Thin Quad
(CP-16-27)
Dimensions shown in millimeters
ORDERING GUIDE
Temperature
Model1
Range
VOUT1 VOUT2 VOUT3
ADP322ACPZ-115-R7 −40°C to +125°C 3.3 V 2.8 V 1.8 V 16-Lead LFCSP_WQ CP-16-27 LGU
ADP322ACPZ-135-R7 −40°C to +125°C 3.3 V 2.5 V 1.8 V 16-Lead LFCSP_WQ CP-16-27 LGT
ADP322ACPZ-145-R7 −40°C to +125°C 3.3 V 2.5 V 1.2 V 16-Lead LFCSP_WQ CP-16-27 LJC
ADP322ACPZ-155-R7 −40°C to +125°C 3.3 V 1.8 V 1.5 V 16-Lead LFCSP_WQ CP-16-27 LGS
ADP322ACPZ-165-R7 −40°C to +125°C 3.3 V 1.8 V 1.2V 16-Lead LFCSP_WQ CP-16-27 LLX
ADP322ACPZ-175-R7 −40°C to +125°C 2.8 V 1.8 V 1.2 V 16-Lead LFCSP_WQ CP-16-27 LGR
ADP322ACPZ-189-R7 −40°C to +125°C 2.5 V 1.8 V 1.2 V 16-Lead LFCSP_WQ CP-16-27 LJD
ADP323ACPZ-R7 −40°C to +125°C Adjustable Adjustable Adjustable 16-Lead LFCSP_WQ CP-16-27 LGQ
ADP322CP-EVALZ Evaluation board
ADP323CP-EVALZ Evaluation board
ADP322CPZ-REDYKIT Evaluation board kit
1
Z = RoHS Compliant Part.
2
For additional voltage options, contact a localsales or distribution representative.