Analog Devices ADP3203 Datasheet

2-Phase IMVP-II and IMVP-III
a
FEATURES Pin Selectable 1- or 2-Phase Operation Static and Dynamic Current Sharing Characteristics Backward Compatible to IMVP-II Superior Load Transient Response with ADOPT
Optimal Positioning Technology Noise Blanking for Speed and Stability Synchronous Rectifier Control Extends Battery Life Smooth Output Transition During VID Code Change Cycle-by-Cycle Current Limiting Hiccup or Latched Overload Protection Transient Glitch-Free Power Good Soft Start Eliminates Power-On In-Rush Current Surge 2-Level Overvoltage and Reverse Voltage Protection
APPLICATIONS IMVP-II and IMVP-III Core DC-to-DC Converters Fixed Voltage Mobile CPU Core DC-to-DC Converters Notebook/Laptop Power Supplies Programmable Output Power Supplies

GENERAL DESCRIPTION

The ADP3203 is a 1- or 2-phase hysteretic peak current dc-to-dc buck converter controller dedicated to power a mobile processor’s core. The optimized low voltage design is powered from the 3.3 V system supply and draws only 10 µA maximum in shutdown. The nominal output voltage is set by a 5-bit VID code. To accommodate the transition time required by the newest processors for on-the-fly VID changes, the ADP3203 features high speed operation to allow a minimized inductor size that results in the fastest change of current to the output. To further allow for the minimum number of output capacitors to be used, the ADP3203 features active voltage positioning with ADOPT optimal compensation to ensure a superior load transient response. The output signal interfaces with the ADP3415 MOSFET driver that is optimized for high speed and high effi­ciency for driving both the top and bottom MOSFETs of the buck converter. The ADP3203 is capable of controlling the synchronous rectifier to extend battery lifetime in light load conditions.
TM
Core Controller for Mobile CPUs
ADP3203

FUNCTIONAL BLOCK DIAGRAM

VCC
SD
ADP3203
EN
CORE
DSLP
BOM
ENABLE _UVLO MAIN BIAS
PWRGD BLANKER
VID MUX AND
SHIFT
SELECTOR
HYSTERESIS
SETTING
AND
SHIFT-MUX
PHASE
SPLITTER
CLIM
CURRENT
SENSE
MUX
5-BIT VID
DAC AND
FIXED
REF
VR
SR CONTROL
COREGD MONITOR
SS-HICCUP TIMER AND OCP
OVP AND RVP
PM MODULE
GND
VR
OUT2
OUT1
CS2
CS1
CS+
CS–
RAMP
REG
DACOUT
DRVLSD
COREFB
SS
CLAMP
HYSSET
DSHIFT
BSHIFT
VID4
VID3
VID2
VID1
VID0
PWRGD
DPRSLP
DSLP
BOM
ADOPT is a trademark of Analog Devices.
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002
ADP3203–SPECIFICATIONS
100 k, C
OUT1
= C
= 10 pF, CSS =0.047 F, R
OUT2
= 680 to 1.2 V, R
PWRGD
(0C TA ⱕ 100ⴗC, High (H) = VCC, Low (L) = 0 V, VCC = 3.3 V, SD = H, V V
DAC
(0 V
DACOUT
), V
= V
= V
REG
CS–
= 5.1 k to VCC; HYSSET, BSHIFT, DSHIFT, and
CLAMP
= 1.25 V, R
VID
OUT1
=R
OUT2
COREFB
=
1
DPRSHIFT are open; BOM = H, DSLP = H, DPRSLP = L, unless otherwise noted.) Current sunk by a pin has a positive sign, sourced by a pin has a negative sign. Negative sign is disregarded for min and max values.
Parameter Symbol Conditions Min Typ Max Unit

SUPPLY-UVLO-SHUTDOWN

Normal Supply Current I UVLO Supply Current I Shutdown Supply Current I
CC
CCUVLO
CCSD
VCC = 2.63 V 75 ␮A SD = L, 3.0 V VCC 3.6 V 10 A
79 mA
UVLO Threshold SD = H
UVLO Hysteresis V
V
CCH
V
CCL
CCHYS
VCC Ramping Up, VSS= 0 V 2.95 V VCC Ramping Down, 2.65 V V
Floating
SS
50 mV
Shutdown Threshold
(CMOS Input) V
SDTH
VCC/2 V

POWER GOOD

Core Feedback Threshold Voltage V
Power Good Output Voltage V
COREFBH
PWRGD
(Open-Drain Output) V
Masking Time t
PWRGDMSK
3
0.9 V < V V V V V V
Ramping Up 1.12 V
COREFB
Ramping Down 1.10 V
COREFB
Ramping Up 0.88 V
COREFB
Ramping Down 0.86 V
COREFB
= V
COREFB
= 0.8 V
COREFB
< 1.675 V
DAC
DACOUT
DACOUT
1.14 V
1.12 V
0.90 V
0.88 V V
CC
DAC
DAC
DAC
DAC
0.95 V
DAC
DAC
DAC
DAC
CC
0 0.8 V
100 ␮s
V V V V V

SOFT START/HICCUP TIMER

Charge/Discharge Current I
SS
Soft Start Enable/Hiccup V
Termination Threshold V
V
SSENDWN
SSENUP
SSTERM
4
V
Soft Start Termination/Hiccup V
VSS = 0 V –16 ␮A V
= 0.5 V 0.5 A
SS
= 1.25 V,
REG
= V
RAMP
V
Ramping Down 80 200 mV
SS
COREFB
= 1.27 V
VSS Ramping Up 150 mV V
RAMP
= V
COREFB
= 1.27 V
Enable Threshold VSS Ramping Up 1.75 2.00 2.25 V

VID DAC

VID Input Threshold
(CMOS Inputs) V
VID Input Current I
VID0..4
VID0..4
VID0 to VID4 = L 85 ␮A
VCC/2 V
(Internal Active Pull-Up) Output Voltage V Accuracy ∆V
Settling Time t
DACS
DAC
DAC/VDAC
5
See VID Code, Table I 0.600 1.750 V 0°C TA 85°C
1.75 V
0.825 V V
DAC
0.850 –0.85 +0.85 %
DAC
0.600 –7.2 +7.2 mV
DAC
= 0.5 V, C
= 10 nF 3.5 s
DAC
REV. 0–2–
ADP3203
Parameter Symbol Conditions Min Typ Max Unit

CORE COMPARATOR

Input Offset Voltage (Ramp-Reg) V Input Bias Current I Output Voltage V
COREOS
, I
REG
OUT_H
RAMP
(OUT1, OUT2) 3.0
V
Propagation Delay Time t
Rise and Fall Time
2
Noise Blanking Time t
OUT_L
RMPOUT_PD
7
t
OUT_R
7
t
OUT_F
BLNK
CURRENT LIMIT
COMPARATOR
Input Offset Voltage V Input Bias Current I Propagation Delay Time t
CLIMOS
, I
CS+
CLiMPD
CS–
6
CURRENT SENSE
MULTIPLEXER
Transresistance R
R R
Common-Mode Voltage Range4V
,Switch Is ON 150
CS1–CS+
,Switch Is OFF 50 M
CS2–CS+
CS3–CS+
= V
CS1
CS2

HYSTERESIS SETTING

Hysteresis Current I
–I
Hysteresis Reference Voltage V
,V
RAMP_H
CSP_H
HYSSET

CURRENT LIMIT SETTING

Hysteresis Current I
CS–
V
= 1.25 V ± 1mV
REG
V
REG
= V
= 1.25 V ± 1 A
RAMP
VCC = 3.0 V 2.5 V
VCC = 3.6 V 0 0.4 V
6
TA = 25°C35ns T
= Full Range 40 ns
A
710 ns
710 ns OUT L-H Transition 130 ns OUT H-L Transition 180 ns
V
= 1.25 V ± 1mV
CS–
V
= 1.25 V –3 A
CS+
TA = 25° C60ns TA = Full Range 100 ns
02V
= 1.25 V
REG
V
= 1.23 V, BOM = H
RAMP
I
= –10 A–8–10 –12 ␮A
HYSSET
= –100 A –85 –100 –115 A
I
HYSSET
V
= 1.27 V, BOM = H
RAMP
I
= –10 A81012 ␮A
HYSSET
= –100 A85100 115 ␮A
I
HYSSET
V
= 1.23 V, BOM = L
RAMP
I
= –10 A –6.4 –8 –9.6 A
HYSSET
= –100 A –68 –80 –92 A
I
HYSSET
V
= 1.27 V, BOM = L
RAMP
I
= –10 A 6.4 8 9.6 A
HYSSET
= –100 A688092␮A
I
HYSSET
1.65 1.7 1.75 V
V
= 1.23 V
RAMP
V
= V
REG
V
CS+
I
HYSSET
I
HYSSET
V
CS+
I
HYSSET
I
HYSSET
V
CS+
I
HYSSET
I
HYSSET
V
CS+
I
HYSSET
I
HYSSET
= V
CS–
= 1.23 V BOM = H
= –10 A –27 –31.5 –36 A = –100 A –270 –301.5 –333 A
= 1.27 V, BOM = H
= –10 A –18 –21.5 –25 A = –100 A –180 –201.5 –223 A
= 1.23 V, BOM = L
= –10 A –21 –25.5 –30 A = –100 A –226 –241.5 –267 A
= 1.27 V, BOM = L
= –10 A –14 –17.5 –21 A = –100 A –144 –161.5 –179 A
COREFB
= 1.25 V
REV. 0
–3–
ADP3203
Parameter Symbol Conditions Min Typ Max Unit

SHIFT SETTING

Battery Shift Current I
Battery Shift Reference Voltage V
RAMPB
BSHIFT
, I
CS+BVVID
= 1.25 V –92.5 –100 –107.5 mA
= –100 µA, BOM = L
I
BSHIFT
DSLP = H
V
DAC
V
Deep Sleep Shift Current I
Deep Sleep Shift Reference Voltage V

SHIFT CONTROL INPUTS

BOM Threshold V
(CMOS Input) DSLP Threshold V (V
-Level CMOS Input)
TT
DPRSLP Mode Threshold
8
(CMOS Input)

LOW SIDE DRIVE CONTROL

Output Voltage (CMOS Output) V
Output Current I
OVER/REVERSE VOLTAGE
PROTECTION-CORE FEEDBACK Overvoltage Threshold V Reverse Voltage Threshold V Output Voltage
(Open-Drain Output) V Output Current I
, I
RAMPD
CS+DVVID
I
DSHIFT
DSLP = L
DSHIFT
BOM
DSLP
V
DPRSLP
DRVLSD
DPRSLP = H 0 0.4 V DPRSLP = L 0.7 V
DRVLSD
DPRSLP = H, V DPRSLP = L, V
COREFB,OVPVCOREFB
COREFB,OVPVCOREFB
CLAMP
CLAMP
V
COREFB
V
COREFB
= 1.25 V –92.5 –100 –107.5 mA
= –100 µA, BOM = H
V
DAC
V
VCC/2 V
0.9 V
VCC/2 V
= 1.5 V 0.4 mA
DRVLSD
= 1.5 V –0.4 mA
DRVLSD
CC
V
CC
V
Rising 2.0 V Falling –0.3 V
= 2.2 V, V = V
DAC
, V
0.7 V
= 5 V 10 µA
CLAMP
= 5 V 2 4 mA
CLAMP
CC
V
CC
V
NOTES
1
All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods.
2
Guaranteed by characterization.
3
Two test conditions: 1)PWRGD is OK but forced to fail by applying an out-of-the-Core-Good-window voltage (V
COREFB pin right after the moment that BOM or DPRSLP is asserted/deasserted. PWRGD should not fail immediately, only with the specified blanking delay time. 2) PWRGD is forced to fail (V (V
COREFB, GOOD
blanking delay time.
4
Guaranteed by design.
5
Measured from 50% of VID code transition amplitude to the point where V
6
40 mVp-p amplitude impulse with 20 mV overdrive. Measured from the input threshold intercept point to 50% of the output voltage swing.
7
Measured between the 30% and 70% points of the output voltage swing.
8
DPRSLP circuit meets the minimum 30 ns DPRSLPVR signal assertion requirement; guaranteed by design.
= 1.25 V) right after the moment that BOM or DPRSLP is asserted/deasserted. PWRGD should not go high immediately, only with the specified
COREFB, BAD
= 1.0 V at V
= 1.25 V setting) but gets into the Core Good window
VID
settles within ± 1% of its steady state value.
DACOUT
COREFB,BAD
= 1.0 V at V
= 1.25 V setting) to the
VID
REV. 0–4–
ADP3203
WARNING!
ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS*

Input Supply Voltage (VCC) . . . . . . . . . . . . . . –0.3 V to +7 V
All Other Inputs/Outputs . . . . . . . . . . . –0.3 V to VCC + 0.3 V
Operating Ambient Temperature Range . . . . . . 0°C to 100°C
Junction Temperature Range . . . . . . . . . . . . . . . 0°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98°C/W
JA
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 sec.) . . . . . . . . . . . . . 300°C
*This is a stress rating only; operation beyond these limits can cause the device to
be permanently damaged.

ORDERING GUIDE

Temperature Package Package
Model Range Description Option
ADP3203JRU-0.85-RL 0.85 V 0ºC to 100ºC TSSOP-28
ADP3203JRU-0.85-R7 0.85 V 0ºC to 100ºC TSSOP-28
ADP3203JRU-1.0-RL 1 V 0ºC to 100ºC TSSOP-28
ADP3203JRU-1.0-RL7 1 V 0ºC to 100ºC TSSOP-28
Table I. VID Code
VID4 VID3 VID2 VID1 VID0 VOUT
000001.750
000011.700
000101.650
000111.600
001001.550
001011.500
001101.450
001111.400
010001.350
010011.300
010101.250
010111.200
011001.150
011011.100
011101.050
011111.000
100000.975
100010.950
100100.925
100110.900
101000.875
101010.850
101100.825
101110.800
110000.775
110010.750
110100.725
110110.700
111000.675
111010.650
111100.625
111110.600

PIN CONFIGURATION

HYSSET
DSHIFT
BSHIFT
VID4
VID3
VID2
VID1
VID0
BOM
DPSLP
DPRSLP
PWRGD
CLAMP
SD
1
2
3
4
5
ADP3203
6
TOP VIEW
(Not to Scale)
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
CS–
CS+
REG
RAMP
VCC
CS2
CS1
OUT2
OUT1
GND
DACOUT
COREFB
SS
DRVLSD
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
ADP3203 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
REV. 0
–5–
Loading...
+ 11 hidden pages