Optimized for low gate charge MOSFETs
All-in-one synchronous buck driver
Bootstrapped high-side drive
One PWM signal generates both drives
Anticross-conduction protection circuitry
Output disable control turns off both MOSFETs
to float output per Intel® VRM 10 specification
APPLICATIONS
Multiphase desktop CPU supplies
Single-supply synchronous buck converters
SIMPLIFIED FUNCTIONAL BLOCK DIAGRAM
Driver with Output Disable
ADP3118
GENERAL DESCRIPTION
The ADP3118 is a dual high voltage MOSFET driver optimized
for driving two N-channel MOSFETs, which are the two switches
in a nonisolated synchronous buck power converter. Each of the
drivers is capable of driving a 3000 pF load with a 25 ns
propagation delay and a 25 ns transition time. One of the drivers
can be bootstrapped and is designed to handle the high voltage
slew rate associated with floating high-side gate drivers. The
ADP3118 includes overlapping drive protection to prevent
shoot-through current in the external MOSFETs.
OD
The
MOSFETs to prevent rapid output capacitor discharge during
system shutdown.
The ADP3118 is specified over the commercial temperature
range of 0°C to 85°C and is available in 8-lead SOIC package.
pin shuts off both the high-side and the low-side
VIN12V
ADP3118
2
IN
DELAY
CMP
1V
3
OD
Flex-Mode™ is Protected by U.S. Patent 6683441
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
VCC = 12 V, BST = 4 V to 26 V, TA = 0°C to 85°C, unless otherwise noted.
Table
1.
Parameter Symbol Conditions Min Typ Max Unit
PWM INPUT
Input Voltage High 2.0 V
Input Voltage Low 0.8 V
Input Current −1 +1 µA
Hysteresis 90 250 mV
OD INPUT
Input Voltage High 2.0 V
Input Voltage Low 0.8 V
Input Current −1 +1 µA
Hysteresis 90 250 mV
Propagation Delay Times
t
HIGH-SIDE DRIVER
Output Resistance, Sourcing Current BST − SW = 12 V 2.2 3.5 Ω
Output Resistance, Sinking Current BST − SW = 12 V 1.0 2.5 Ω
Output Resistance, Unbiased BST − SW = 0 V 10 kΩ
Transition Times
t
Propagation Delay Times2 t
t
SW Pull-Down Resistance SW to PGND 10 kΩ
LOW-SIDE DRIVER
Output Resistance, Sourcing Current 2.0 3.2 Ω
Output Resistance, Sinking Current 1.0 2.5 Ω
Output Resistance, Unbiased VCC = PGND 10 kΩ
Transition Times
t
Propagation Delay Times2 t
t
Timeout Delay SW = 5 V 110 190 ns
SW = PGND 95 150 ns
SUPPLY
Supply Voltage Range V
Supply Current I
UVLO Voltage VCC rising 1.5 3.0 V
Hysteresis 350 mV
1
All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC) methods.
2
For propagation delays, t
1
2
refers to the specified signal going high, and t
pdh
t
pdlOD
pdhOD
t
rDRVH
fDRVH
pdhDRVH
pdlDRVH
t
rDRVL
fDRVL
pdhDRVL
pdlDRVL
CC
SYS
See Figure 3 20 35 ns
See Figure 3 40 55 ns
BST − SW = 12 V, C
BST − SW = 12 V, C
BST − SW = 12 V, C
BST − SW = 12 V, C
C
= 3 nF, see Figure 4 20 35 ns
LOAD
C
= 3 nF, see Figure 4 16 30 ns
LOAD
C
= 3 nF, see Figure 4 12 35 ns
LOAD
C
= 3 nF, see Figure 4 30 45 ns
LOAD
= 3 nF, see Figure 4 25 40 ns
LOAD
= 3 nF, see Figure 4 20 30 ns
LOAD
= 3 nF, see Figure 4 25 40 ns
LOAD
= 3 nF, see Figure 4 25 35 ns
LOAD
4.15 13.2 V
BST = 12 V, IN = 0 V 2 5 mA
refers to it going low.
pdl
Rev. 0 | Page 3 of 16
ADP3118
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
VCC −0.3 V to +15 V
BST −0.3 V to VCC +15 V
BST to SW −0.3 V to +15 V
SW
DC −5 V to +15 V
<200 ns −10 V to +25 V
DRVH
DC SW − 0.3 V to BST + 0.3 V
<200 ns SW − 2 V to BST + 0.3 V
DRVL
DC −0.3 V to VCC + 0.3 V
<200 ns −2 V to VCC + 0.3 V
OD
IN,
θJA, SOIC
2-Layer Board
4-Layer Board
Operating Ambient Temperature
Range
Junction Temperature Range 0°C to 150°C
Storage Temperature Range −65°C to +150°C
Lead Temperature Range
Soldering (10 sec)
Vapor Phase (60 sec)
Infrared (15 sec)
−0.3 V to 6.5 V
123°C/W
90°C/W
0°C to 85°C
300°C
215°C
260°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Unless otherwise specified, all voltages are referenced to PGND.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. 0 | Page 4 of 16
ADP3118
V
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
BST
OD
CC
IN
1
ADP3118
2
3
TOP VIEW
(Not to Scale)
4
8
7
6
5
DRVH
SW
PGND
DRVL
05452-002
Figure 2. 8-Lead SOIC Pin Configuration
Table 3. Pin Function Descriptions
Pin No. Mnemonic Description
1 BST
Upper MOSFET Floating Bootstrap Supply. A capacitor connected between the BST and SW pins holds this
bootstrapped voltage for the high-side MOSFET as it is switched.
2 IN
Logic Level PWM Input. This pin has primary control of the driver outputs. In normal operation, pulling this pin
low turns on the low-side driver; pulling it high turns on the high-side driver.
3
OD
Output Disable. When low, this pin disables normal operation, forcing DRVH and DRVL low.
4 VCC Input Supply. This pin should be bypassed to PGND with ~1 µF ceramic capacitor.
5 DRVL Synchronous Rectifier Drive. Output drive for the lower (synchronous rectifier) MOSFET.
6 PGND Power Ground. Should be closely connected to the source of the lower MOSFET.
7 SW
This pin is connected to the buck-switching node, close to the upper MOSFET’s source. It is the floating return
for the upper MOSFET drive signal. It is also used to monitor the switched voltage to prevent turn-on of the
lower MOSFET until the voltage is below ~1 V.
8 DRVH Buck Drive. Output drive for the upper (buck) MOSFET.
Rev. 0 | Page 5 of 16
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