Input voltage range: 2.5 V to 5.5 V
Dual independent 200 mA low dropout voltage regulators
Miniature 6-ball, 1.0 mm × 1.5 mm WLCSP
Initial accuracy: ±1%
Stable with 1 μF ceramic output capacitors
No noise bypass capacitor required
Two independent logic controlled enables
Overcurrent and thermal protection
Active output pull-down (ADP221)
Key specifications
High PSRR
76 dB PSRR up to 1 kHz
70 dB PSRR at 10 kHz
60 dB PSRR at 100 kHz
40 dB PSRR at 1 MHz
Low output noise
27 μV rms typical output noise at V
50 μV rms typical output noise at V
Excellent transient response
Low dropout voltage: 150 mV @ 200 mA load
60 μA typical ground current at no load, both LDOs enabled
100 μs fast turn-on circuit
Guaranteed 200 mA output current per regulator
−40°C to +125°C junction temperature
= 1.2 V
OUT
= 2.8 V
OUT
High PSRR Voltage Regulator
ADP220/ADP221
TYPICAL APPLICATION CIRCUITS
1
ON
A
OFF
ON
OFF
EN1VOUT1
B
GNDVIN
C
EN2VOUT2
TOP VIEW
(Not to Scale)
Figure 1. Typical Application Circuit
VINVOUT1
CURRENT
LIMIT
REFERENCE
EN1
EN2
THERMAL
SHUTDOWN
CONTROL
LOGIC
AND
ENABLE
2
V
= 2.8V
OUT1
1µF
V
= 3.3V
IN
1µF
V
= 2.8V
OUT2
1µF
60Ω
ADP221
ONLY
07572-001
APPLICATIONS
Mobile phones
Digital cameras and audio devices
Portable and battery-powered equipment
Portable medical devices
Post dc-to-dc regulation
GENERAL DESCRIPTION
The 200 mA dual output ADP220/ADP221 combine high PSRR,
low noise, low quiescent current, and low dropout voltage in a
voltage regulator ideally suited for wireless applications with
demanding performance and board space requirements.
The low quiescent current, low dropout voltage, and wide input
voltage range of the ADP220/ADP221 extend the battery life of
portable devices. The ADP220/ADP221 maintain power supply
rejection greater than 60 dB for frequencies as high as 100 kHz
while operating with a low headroom voltage. The ADP220
offers much lower noise performance than competing LDOs
Rev. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
ADP220
GND
CURRENT
LIMIT
60Ω
Figure 2. Block Diagram of the ADP220/ADP221
without the need for a noise bypass capacitor. The ADP221 also
includes an active pull-down to quickly discharge output loads.
The ADP220/ADP221 are available in a miniature 6-ball
WLCSP package and is stable with tiny 1 µF ± 30% ceramic
output capacitors, resulting in the smallest possible board
area for a wide variety of portable power needs.
The ADP220/ADP221 are available in many output voltage
combinations, ranging from 0.8 V to 3.3 V, and offer overcurrent and thermal protection to prevent damage in adverse
conditions.
Changes to Figure 25 ...................................................................... 10
Changes to Enable Feature Section and Figure 32 ..................... 13
Changes to Current-Limit and Thermal Overland Protection
Section and Thermal Considerations Section ............................ 14
Changes to Ordering Guide .......................................................... 17
3/09—Rev. 0 to Rev. A
Changes to Figure 15 ......................................................................... 8
Changes to Figure 16 ......................................................................... 9
Changes to Ordering Guide .......................................................... 17
10/08—Revision 0: Initial Version
Rev. D | Page 2 of 20
ADP220/ADP221
SPECIFICATIONS
VIN = (V
unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT VOLTAGE RANGE VIN T
OPERATING SUPPLY CURRENT WITH
BOTH REGULATORS ON
I
I
I
I
I
SHUTDOWN CURRENT I
EN1= EN2 = GND, TJ = −40°C to +125°C 2 µA
FIXED OUTPUT VOLTAGE ACCURACY V
LINE REGULATION V
V
LOAD REGULATION
I
DROPOUT VOLTAGE
I
I
I
START-UP TIME
V
V
V
ACTIVE PULL-DOWN RESISTANCE t
CURRENT-LIMIT THRESHOLD
THERMAL SHUTDOWN
Thermal Shutdown Threshold TSSD T
Thermal Shutdown Hysteresis TS
EN INPUT
EN Input Logic High VIH 2.5 V ≤ VIN ≤ 5.5 V 1.2 V
EN Input Logic Low VIL 2.5 V ≤ VIN ≤ 5.5 V 0.4 V
EN Input Leakage Current V
EN1 = EN2 = VIN or GND, TJ = −40°C to +125°C 1 µA
UNDERVOLTAGE LOCKOUT UVLO
Input Voltage Rising UVLO
Input Voltage Falling UVLO
Hysteresis UVLO
OUTPUT NOISE OUT
10 Hz to 100 kHz, VIN = 5 V, V
10 Hz to 100 kHz, VIN = 3.6 V, V
10 Hz to 100 kHz, VIN = 3.6 V, V
+ 0.5 V) or 2.5 V (whichever is greater), EN1 = EN2 = VIN, I
OUT
= −40°C to +125°C 2.5 5.5 V
J
I
I
GND
EN1= EN2 = GND 0.1 µA
GND-SD
−1 +1 %
OUT
= 0 µA 60 µA
OUT
= 0 µA, TJ = −40°C to +125°C 120 µA
OUT
= 10 mA 70 µA
OUT
= 10 mA, TJ = −40°C to +125°C 140 µA
OUT
= 200 mA 120 µA
OUT
= 200 mA, TJ = −40°C to +125°C 220 µA
OUT
100 µA < I
5.5 V, T
/VIN VIN = (V
OUT
= (V
1
V
2
V
3
t
4
I
/I
OUT
DROPOUT
V
START-UP
SHUTDOWN
240 300 440 mA
LIMIT
SD-HYS
I-LEAKAGE
RISE
FAL L
HYS
NOISE
IN
I
OUT
V
= 1 mA to 200 mA 0.001 %/mA
OUT
= 1 mA to 200 mA, TJ = −40°C to +125°C 0.003 %/mA
OUT
V
= 3.3 V mV
OUT
I
= 10 mA 7.5 mV
OUT
= 10 mA, TJ = −40°C to +125°C 12 mV
OUT
= 200 mA 150 mV
OUT
= 200 mA, TJ = −40°C to +125°C 230 mV
OUT
= 3.3 V, both initially off, enable one 240 µs
OUT
= 0.8 V, both initially off, enable one 100 µs
OUT
= 3.3 V, one initially on, enable second 180 µs
OUT
= 0.8 V, one initially on, enable second 20 µs
OUT
= 2.8 V, R
OUT
rising 155 °C
J
15 °C
EN1 = EN2 = VIN or GND 0.1 µA
2.45 V
2.2 V
100 mV
10 Hz to 100 kHz, VIN = 5 V, V
= I
OUT1
< 200 mA, VIN = (V
OUT
= −40°C to +125°C
J
+ 0.5 V) to 5.5 V 0.01 %/V
OUT
+ 0.5 V) to 5.5 V, TJ = −40°C to +125°C −0.03 +0.03 %/V
OUT
= ∞, C
LOAD
= 10 mA, CIN = C
OUT2
+ 0.5 V) to
OUT
= 1 F, ADP221 only 80 Ω
OUT
= 3.3 V 56 µV rms
OUT
= 2.8 V 50 µV rms
OUT
= 2.5 V 45 µV rms
OUT
= 1.2 V 27 µV rms
OUT
OUT1
= C
= 1 µF, TA = 25°C,
OUT2
−2 +2 %
Rev. D | Page 3 of 20
ADP220/ADP221
Parameter Symbol Conditions Min Typ Max Unit
POWER SUPPLY REJECTION RATIO PSRR VIN = 2.5 V, V
100 Hz 76 dB
1 kHz 76 dB
10 kHz 70 dB
100 kHz 60 dB
1 MHz 40 dB
V
= 3.8 V, V
IN
100 Hz 68 dB
1 kHz 68 dB
10 kHz 68 dB
100 kHz 60 dB
1 MHz 40 dB
1
Based on an end-point calculation using 1 mA and 200 mA loads.
2
Dropout voltage is defined as the input-to-output voltage differential when the input voltage is set to the nominal output voltage. This applies only for output
voltages above 2.5 V.
3
Start-up time is defined as the time between the rising edge of ENx to V
4
Current-limit threshold is defined as the current at which the output voltage drops to 90% of the specified typical value. For example, the current limit for a 3.0 V
output voltage is defined as the current that causes the output voltage to drop to 90% of 3.0 V, or 2.7 V.
being at 90% of its nominal value.
OUTx
INPUT AND OUTPUT CAPACITOR, RECOMMENDED SPECIFICATIONS
= 0.8 V, I
OUT
= 2.8 V, I
OUT
= 100 mA
OUT
= 100 mA
OUT
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
MINIMUM INPUT AND OUTPUT CAPACITANCE
CAPACITOR ESR R
1
The minimum input and output capacitance should be greater than 0.70 µF over the full range of operating conditions. The full range of operating conditions in the
application must be considered during device selection to ensure that the minimum capacitance specification is met. X7R and X5R type capacitors are recommended;
Y5V and Z5U capacitors are not recommended for use with LDOs.
1
C
TA = −40°C to +125°C 0.70 µF
MIN
T
ESR
= −40°C to +125°C 0.001 1 Ω
A
Rev. D | Page 4 of 20
ADP220/ADP221
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
VIN to GND –0.3 V to +6.5 V
VOUT1, VOUT2 to GND –0.3 V to VIN
EN1, EN2 to GND –0.3 V to +6.5 V
Storage Temperature Range –65°C to +150°C
Operating Junction Temperature Range –40°C to +125°C
Soldering Conditions JEDEC J-STD-020
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination.
The ADP220/ADP221 can be damaged when the junction
temperature limits are exceeded. Monitoring ambient temperature does not guarantee that the junction temperature (T
is within the specified temperature limits. In applications
with high power dissipation and poor thermal resistance, the
maximum ambient temperature may have to be derated. In
applications with moderate power dissipation and low PCB
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits. The junction temperature (T
the device is dependent on the ambient temperature (T
power dissipation of the device (P
thermal resistance of the package (θ
temperature (T
(T
) and power dissipation (PD) using the following formula:
A
T
= TA + (PD × θJA)
J
) is calculated from the ambient temperature
J
), and the junction-to-ambient
D
). Maximum junction
JA
J
), the
A
)
) of
J
Junction-to-ambient thermal resistance (θ
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent
on the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θ
on PCB material, layout, and environmental conditions. The
specified values of θ
circuit board. Refer to JEDEC JESD 51-9 for detailed information on the board construction. For additional information,
see the AN-617 Application Note, MicroCSPScale Package.
Ψ
is the junction-to-board thermal characterization parameter
JB
with units of °C/W. Ψ
calculation using a 4-layer board. The JESD51-12, Guidelines for Reporting and Using Package Thermal Information, states
that thermal characterization parameters are not the same as
thermal resistances. Ψ
through multiple thermal paths rather than a single path as in
thermal resistance, θ
convection from the top of the package as well as radiation
from the package. Factors that make Ψ
world applications. Maximum junction temperature (T
calculated from the board temperature (T
dissipation (P
= TB + (PD × ΨJB)
T
J
Refer to JEDEC JESD51-8 and JESD51-12 for more detailed
information on Ψ
THERMAL RESISTANCE
θJA and ΨJB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
Table 4.
Package Type θJA ΨJB Unit
6-Ball, 0.5 mm Pitch WLCSP 260 43.8 °C/W
are based on a four-layer, 4 inch × 3 inch,
JA
of the package is based on modeling and
JB
measures the component power flowing
JB
. Therefore, ΨJB thermal paths include
JB
) using the following formula:
D
.
JB
) of the package is
JA
may vary, depending
JA
TM
Wafer L ev e l Chi p
more useful in real-
JB
) is
J
) and power
B
ESD CAUTION
Rev. D | Page 5 of 20
ADP220/ADP221
A
C
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
EN1VOUT1
B
GNDVIN
EN2VOUT2
TOP VIEW
(BALL SIDE DOWN)
Not to Scal e
Figure 3. Pin Configuration
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
A1 EN1
Enable Input for Regulator 1. Drive EN1 high to turn on Regulator 1; drive it low to turn off Regulator 1.
For automatic startup, connect EN1 to VIN.
B1 GND Ground Pin.
C1 EN2
Enable Input for Regulator 2. Drive EN2 high to turn on Regulator 2; drive it low to turn off Regulator 2.
For automatic startup, connect EN2 to VIN.
A2 VOUT1 Regulated Output Voltage 1. Connect a 1 µF or greater output capacitor between VOUT1 and GND.
B2 VIN Regulator Input Supply. Bypass VIN to GND with a 1 µF or greater capacitor.
C2 VOUT2 Regulated Output Voltage 2. Connect a 1 µF or greater output capacitor between VOUT2 and GND.
2
7572-003
Rev. D | Page 6 of 20
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