Input voltage: 2.3 V to 5.5 V
Peak efficiency: 95%
3 MHz fixed frequency operation
Low quiescent current: 23 μA
Ultralow shutdown current: 0.2 μA (typical)
VSEL pin for simple dynamic voltage scaling (DVS)
100% duty cycle low dropout mode
Internal synchronous rectifier, compensation, and soft start
Current overload and thermal shutdown protection
Small, 6-ball, 1 mm × 1.5 mm WLCSP package
APPLICATIONS
PDAs and palmtop computers
Wireless handsets
Digital audio portable media players
Digital cameras, GPS navigation units
Low power portable medical equipment
Simple DVS, Buck Regulator
ADP2147
GENERAL DESCRIPTION
The ADP2147 is a high efficiency, low quiescent current, stepdown (buck) dc-to-dc regulator with an output voltage that can
be switched between two different settings under the control of
a select pin. The total solution requires only three tiny external
components.
The buck regulator automatically switches operating modes,
depending on the load current level, to maximize efficiency. At
high output loads, the buck regulator operates in PWM mode.
When the load current falls below a predefined threshold, the
regulator operates in power save mode (PSM), improving the
light-load efficiency.
The ADP2147 runs on input voltages of 2.3 V to 5.5 V, which
allows for single lithium or lithium polymer cells, multiple
alkaline or NiMH cells, PCMCIA, USB, and other standard
power sources. The maximum load current of 800 mA is
achievable across the input voltage range.
The ADP2147 is available with fixed output voltages from 0.8 V
to 3.3 V. All versions include an internal power switch and
synchronous rectifier for minimal external part count and high
efficiency. The ADP2147 has an internal soft start and is
internally compensated. During logic controlled shutdown, the
input is disconnected from the output, and the ADP2147 draws
less than 0.2 A (typical) from the power source.
Other key features include undervoltage lockout to prevent deep
battery discharge and soft start to prevent input current overshoot at startup. The ADP2147 is available in a 6-ball WLCSP.
TYPICAL APPLICATIONS CIRCUIT
2.3V TO 5.5V
4.7µF4.7µF
OFF
V
OUT
_L
OUT
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
VIN = 3.6 V, V
unless otherwise noted. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
Table 1.
Parameter Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Input Voltage Range 2.3 5.5 V
Undervoltage Lockout Threshold VIN rising 2.3 V
V
OUTPUT CHARACTERISTICS
Output Voltage Accuracy PWM mode, VSEL = Low −2 +2 %
PWM mode, VSEL = High −2.5 +2.5 %
Line Regulation VIN = 2.3 V to 5.5 V, PWM mode 0.25 %/V
Load Regulation I
PWM TO POWER SAVE MODE CURRENT THRESHOLD 100 mA
INPUT CURRENT CHARACTERISTICS
DC Operating Current I
Shutdown Current EN = 0 V, TA = TJ = −40°C to +85°C 0.2 1.0 A
SW CHARACTERISTICS
SW On Resistance pFET 155 240 mΩ
nFET 115 200 mΩ
Current Limit pFET switch peak current limit 1100 1500 1650 mA
ENABLE/VSEL CHARACTERISTICS
Input High Threshold 1.2 V
Input Low Threshold 0.4 V
Input Leakage Current EN = VSEL = 0 V to 3.6 V −1 0 +1 A
OSCILLATOR FREQUENCY 2.6 3.0 3.4 MHz
START-UP TIME 250 s
THERMAL CHARACTERISTICS
Thermal Shutdown Threshold 150 °C
Thermal Shutdown Hysteresis 20 °C
= 0.8 V to 3.3 V, TJ = −40°C to +125°C for minimum/maximum specifications, and TA = 25°C for typical specifications,
OUT
falling 2.00 2.15 2.25 V
IN
= 0 mA to 800 mA −0.95 %/A
LOAD
= 0 mA, device not switching 23 30 A
LOAD
INPUT AND OUTPUT CAPACITOR, RECOMMENDED SPECIFICATIONS
TA = −40°C to +125°C, unless otherwise specified. All limits at temperature extremes are guaranteed via correlation using standard
statistical quality control (SQC).
Table 2.
Parameter Symbol Min Typ Max Unit
MINIMUM INPUT AND OUTPUT CAPACITANCE C
CAPACITOR ESR R
Rev. 0 | Page 3 of 16
4.7 µF
MIN
0.001 1 Ω
ESR
ADP2147
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
VIN, EN, VSEL −0.4 V to +6.5 V
VOUT, SW to GND −1.0 V to (VIN + 0.2 V)
Temperature Range
Operating Ambient −40°C to +85°C
Operating Junction −40°C to +125°C
Storage Temperature −65°C to +150°C
Human Body ±1500 V
Charged Device ±500 V
Machine ±100 V
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. These are stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
Junction-to-ambient thermal resistance (θ
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θ
PCB material, layout, and environmental conditions. The specified
values of θ
to JEDEC JESD 51-9 for detailed information pertaining to board
construction. For additional information, see the AN-617
Application Note, MicroCSP™ Wafer Level Chip Scale Package.
Ψ
is the junction-to-board thermal characterization parameter
JB
measured in units of °C/W. The package Ψ
and calculation using a 4-layer board. The JESD51-12, Guidelines for Reporting and Using Package Thermal Information, states that
thermal characterization parameters are not the same as thermal
resistances. Ψ
multiple thermal paths rather than through a single path, which
is the procedure for measuring thermal resistance, θ
fore, Ψ
package as well as radiation from the package, factors that make
Ψ
more useful in real-world applications than θJB. Maximum
JB
junction temperature (T
(T
) and power dissipation (PD) using the formula:
B
T
J
Refer to JEDEC JESD51-8 and JESD51-12 for more detailed
information about Ψ
combination.
The ADP2147 can be damaged if the junction temperature limit is
exceeded. Monitoring ambient temperature does not guarantee
that the junction temperature (T
) is within the specified
J
temperature limit. In applications with high power dissipation
and poor thermal resistance, the maximum ambient temperature
may need to be derated. In applications with moderate power
dissipation and low printed circuit board (PCB) thermal
resistance, the maximum ambient temperature can exceed the
maximum limit if the junction temperature is within specification
limits. The junction temperature (T
on the ambient temperature (T
device (P
package (θ
), and the junction-to-ambient thermal resistance of the
D
). Maximum junction temperature (TJ) is calculated
JA
from the ambient temperature (T
) of the device is dependent
J
), the power dissipation of the
A
) and power dissipation (PD)
A
THERMAL RESISTANCE
θJA and ΨJB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type θJA Ψ
6-Ball WLCSP 170 80 °C/W
ESD CAUTION
using the following formula:
T
= TA + (PD × θJA)
J
are based on a 4-layer, 4 in. × 3 in. circuit board. Refer
JA
measures the component power flowing through
JB
thermal paths include convection from the top of the
JB
) is calculated from the board temperature
J
= TB + (PD × ΨJB)
.
JB
) of the package is
JA
may vary, depending on
JA
is based on modeling
JB
. There-
JB
Unit
JB
Rev. 0 | Page 4 of 16
ADP2147
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
BALL A1
INDICA TOR
1
2
VINEN
A
SW
VSEL
B
GND VOUT
C
ADP2147
TOP VIEW
(BALL SIDE DOWN)
Not to Scale
Figure 2. Pin Configuration (Top View)
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
A1 VIN
Power Source Input. VIN is the source of the pFET high-side switch. Bypass VIN to GND with a 4.7 µF or greater
capacitor as close to the ADP2147 as possible.
B1 SW
Switch Node Output. SW is the drain of the P-channel MOSFET switch and N-channel synchronous rectifier.
Connect the output LC filter between SW and the output voltage.
C1 GND Ground. Connect the input and output capacitors to GND.
A2 EN Buck Activation. To turn on the buck, set EN to high. To turn off the buck, set EN to low.
B2 VSEL
Voltage Select Input for Simple Dynamic Voltage Scaling (DVS). Drive VSEL low to switch the VOUT pin to the
default voltage setting. Drive VSEL high to switch VOUT to the alternate voltage setting.
C2 VOUT Output Voltage Sensing Input.
09885-002
Rev. 0 | Page 5 of 16
ADP2147
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = 3.6 V, TA = 25°C, VEN = VIN, unless otherwise noted.
100
90
80
70
60
50
40
EFFICIENCY (%)
30
20
10
0
0.0010.010.11
I
OUT
(A)
VIN = 2.3V
= 3.6V
V
IN
= 4.2V
V
IN
= 5.5V
V
IN
Figure 3. Efficiency vs. Load Current, Across Input Voltage,
= 1.8 V
V
OUT
100
90
80
70
60
50
40
EFFICIENCY (%)
30
20
10
0
0.0010.010.11
I
OUT
(A)
VIN = 2.3V
= 3.6V
V
IN
= 4.2V
V
IN
= 5.5V
V
IN
Figure 4. Efficiency vs. Load Current, Across Input Voltage,
V
= 0.8 V
OUT
100
90
80
70
60
50
40
EFFICIENCY (%)
30
20
10
0
0.0010.010.11
I
OUT
(A)
VIN = 3.9V
V
= 4.2V
IN
V
= 5.5V
IN
Figure 5. Efficiency vs. Load Current, Across Input Voltage,
= 3.3 V
V
OUT
09885-003
09885-005
09885-007
1.825
1.815
1.805
(V)
OUT
V
1.795
1.785
1.775
00.10.20.30.40.50.60.70.8
I
OUT
(A)
Figure 6. Load Regulation Across Input Voltage, V
0.815
0.810
0.805
0.800
(V)
OUT
0.795
V
0.790
0.785
0.780
00.10.20.30.40.50.60.70.8
I
OUT
(A)
Figure 7. Load Regulation Across Input Voltage, V
3.378
3.358
3.338
3.318
(V)
3.298
OUT
V
3.278
3.258
3.238
3.218
00.10.20.30.40.50.60.70.8
I
OUT
(A)
Figure 8. Load Regulation Across Input Voltage, V
VIN = 2.3V
V
= 3.6V
IN
V
= 4.2V
IN
V
= 5.5V
IN
= 1.8 V
OUT
VIN = 2.3V
V
= 3.6V
IN
V
= 4.2V
IN
V
= 5.5V
IN
= 0.8 V
OUT
VIN = 3.9V
V
= 4.2V
IN
V
= 5.5V
IN
= 3.3 V
OUT
09885-006
09885-008
09885-009
Rev. 0 | Page 6 of 16
ADP2147
3.5
3.4
3.3
3.2
3.1
3.0
2.9
FREQUENCY (MHz)
2.8
2.7
2.6
2.5
0.10.20.30.40.50.60.7
I
OUT
(A)
Figure 9. Frequency vs. Output Current, Across Temperature,
= 1.8 V
V
OUT
3.5
3.4
3.3
3.2
3.1
3.0
2.9
FREQUENCY ( MHz)
2.8
2.7
2.6
2.5
0.10.20.30.40.50.60.7
I
OUT
(A)
Figure 10. Frequency vs. Output Current, Across Supply Voltage,
= 1.8 V
V
OUT
90
80
70
60
50
40
30
OUTPUT VOLTAGE (mV)
20
10
I
= 100µA
OUT
I
= 25mA
OUT
I
= 500mA
OUT
0
2.32.83.33.84.34.85.3
INPUT VOLTAGE (V)
Figure 11. Output Voltage Ripple vs. Input Voltage,
Across Output Current, V
OUT
= 1.8 V
+25°C
+85°C
+125°C
–40°C
VIN = 2.3V
VIN = 3.6V
VIN = 4.2V
VIN = 5.5V
350
300
250
200
(mΩ)
150
DSON
R
100
50
0
2.32.83.33.84.34.85.3
09885-010
Figure 12. R
DSON
INPUT VOLTAGE (V)
PFET vs. Input Voltage, Across Temperature
–40°C
+25°C
+125°C
09885-036
250
200
150
(mΩ)
DSON
100
R
50
0
2.32.83.33.84.34.85.3
09885-011
Figure 13. R
DSON
INPUT VOLTAGE (V)
NFET vs. Input Voltage, Across Temperature
–40°C
+25°C
+125°C
09885-037
T
4
4
1
1
2
CH1 100mV
09885-034
CH2 250mA Ω
CH4 5.00V
SW
V
OUT
I
OUT
M 40.0µs A CH2 215mA
T
2
6
.
0
0
%
09885-014
Figure 14. Response to Load Transient, 150 mA to 500 mA,
V
= 1.8 V
OUT
Rev. 0 | Page 7 of 16
ADP2147
T
4
4
1
1
V
I
SW
OUT
OUT
4
4
1
1
T
SW
V
OUT
I
OUT
2
CH1 100mV
CH2 250mA Ω
CH4 5.00V
M 40.0µs A CH2 215mA
T
2
6
.
0
0
%
Figure 15. Response to Load Transient, 50 mA to 200 mA,
= 1.8 V
V
OUT
4
4
1
1
2
CH1 100mV
T
CH2 250mA Ω
CH4 5.00V
SW
V
OUT
I
OUT
M 40.0µs A CH2 215mA
T
2
6
.
0
0
%
Figure 16. Response to Load Transient, 150 mA to 500 mA,
= 0.8 V
V
OUT
T
SW
2
CH1 100mV
09885-015
CH2 250mA Ω
CH4 5.00V
M 40.0µs A CH2 275mA
T
2
6
.
0
0
%
09885-018
Figure 18. Response to Load Transient, 150 mA to 500 mA,
= 3.3 V
V
OUT
T
4
4
1
1
2
CH1 100mV
09885-016
CH2 100mA Ω
CH4 5.00V
SW
V
OUT
I
OUT
M 40.0µs A CH2 114mA
T
2
6
.
0
0
%
09885-019
Figure 19. Response to Load Transient, 50 mA to 200 mA,
= 3.3 V
V
OUT
T
4
4
V
OUT
1
1
I
OUT
2
CH1 100mV
CH2 100mA Ω M 40.0µs A CH2 134mA
CH4 5.00V
T
2
6
.
0
0
%
Figure 17. Response to Load Transient, 50 mA to 200 mA, V
OUT
09885-017
= 0.8 V
Rev. 0 | Page 8 of 16
V
IN
V
1
3
CH1 20.0mV
CH3 1.00V
OUT
M 40.0µsA CH3 4.50V
T –84.0000µs
Figure 20. Response to Line Transient, V
= 3.3 V, VIN = 4.0 V to 4.8 V
OUT
09885-020
ADP2147
T
V
IN
V
1
3
OUT
T
4
2
1
1
1
3
SW
I
IN
V
OUT
E
N
CH1 20.0mV
CH3 1.00V
Figure 21. Response to Line Transient, V
= 4.0 V to 4.8 V
V
IN
V
V
1
3
CH1 20.0mV
CH3 1.00V
OUT
Figure 22. Response to Line Transient, V
V
= 4.0 V to 4.8 V
IN
T
4
2
SW
I
M 40.0µsA CH3 4.50V
T –84.0000µs
= 0.8 V,
OUT
T
IN
M 40.0µsA CH3 4.50V
T –84.0000µs
= 1.8 V,
OUT
IN
CH1 1.00V Ω
09885-021
CH3 5.00V
CH2 500mA ΩM 40.0µs A CH3 2.50V
CH4 5.00V
Figure 24. Startup, V
= 0.8 V, I
OUT
T
1
0
.
4
0
%
OUT
= 10 mA
09885-023
T
4
2
1
1
1
3
CH1 5.00V Ω
09885-033
CH3 5.00V
CH2 500mA ΩM 40.0µs A CH3 2.50V
CH4 5.00V
Figure 25. Startup, V
4
4
SW
I
SW
I
IN
V
OUT
E
N
T
1
0
.
4
0
%
= 3.3 V, I
OUT
T
L
= 10 mA
OUT
09885-024
1
1
1
3
CH1 2.00V Ω
CH3 5.00V
V
OUT
E
N
CH2 500mA ΩM 40.0µs A CH3 2.50V
CH4 5.00V
Figure 23. Startup, V
= 1.8 V, I
OUT
T
1
0
.
4
0
%
OUT
= 10 mA
09885-022
Rev. 0 | Page 9 of 16
2
V
OUT
1
1
CH1 10.0mVΩ
CH2 500mA Ω
CH4 2.00V
Figure 26. Typical Waveform, V
A CH1 3.80mVM 1.00µs
T
5
0
.
0
0
%
= 1.8 V, PSM Mode, I
OUT
= 10 mA
OUT
09885-025
ADP2147
SW
4
I
L
2
V
OUT
1
1
T
1
2
T
CH1 10.0mVΩ CH2 500m A Ω
CH4 2.00V
Figure 27. Typical Waveform, V
T
= 1.8 V, PWM Mode, I
OUT
A CH4 1.32VM 40.0µs
5
0
.
0
0
%
130
120
110
100
RIPPLE (mV)
OUT
V
Figure 28. V
1.8V, VIN = 5.5V, AUTO
1.8V, VIN = 3.6V, AUTO
1.8V, VIN = 2.3V, AUTO
90
80
70
60
50
40
30
20
10
0
0.0010.010. 11
Peak-to-Peak Ripple vs. Output Current, V
OUT
I
OUT
T
(A)
= 200 mA
OUT
= 1.8 V
OUT
CH1 100mVCH2 2.00V
09885-026
T 79.64µs
A CH2 1.72VM 40.0µs
09885-130
Figure 30. VSEL Change Triggering VOUT Transition from 1.275 V to 0.981 V,
= 10 mA
I
LOAD
T
1
2
CH1 100mVCH2 2.00V
09885-028
T 50.20%
A CH2 1.76VM 40.0µs
09885-131
Figure 31. VSEL Change Triggering VOUT Transition from 0.981 V to1.275 V,
I
= 200 mA
LOAD
T
1
2
CH1 100mVCH2 2.00V
T –1.966µs
A CH2 1.72VM 40.0µs
09885-129
Figure 29. VSEL Change Triggering VOUT Transition from 0.981 V to 1.275 V,
= 10 mA
I
LOAD
Rev. 0 | Page 10 of 16
1
2
CH1 100mVCH2 2.00V
T 30.00%
A CH2 1.76VM 40.0µs
09885-132
Figure 32. VSEL Change Triggering VOUT Transition from1.275 V to 0.981 V, I
= 200 mA
LOAD
ADP2147
THEORY OF OPERATION
PWM
COMP
GM ERROR
AMP
SOFT START
VOUT
PSM
COMP
CONTROL
OSCILL ATOR
UNDERVOLTAG E
LOCKOUT
VSEL
ADP2147
Figure 33. Functional Block Diagram
The ADP2147 is a step-down dc-to-dc regulator that uses a
fixed frequency and high speed current-mode architecture.
The high switching frequency and tiny 6-ball WLCSP package
enable a small step-down dc-to-dc regulator solution.
The ADP2147 operates with an input voltage of 2.3 V to 5.5 V
and regulates an output voltage down to 0.8 V.
CONTROL SCHEME
The ADP2147 operates with a fixed frequency, current-mode
PWM control architecture at medium to high loads for high
efficiency but shifts to a power save mode control scheme at
light loads to lower the regulation power losses. When operating in
PWM mode, the duty cycle of the integrated switches is adjusted
and regulates the output voltage. When operating in power save
mode at light loads, the output voltage is controlled in a hysteretic manner, with higher V
ripple. During part of this time,
OUT
the converter is able to stop switching and enters an idle mode,
which improves conversion efficiency.
PWM MODE
In PWM mode, the ADP2147 operates at a fixed frequency of
3 MHz, set by an internal oscillator. At the start of each oscillator
cycle, the pFET switch is turned on, sending a positive voltage
across the inductor. Current in the inductor increases until the
magnitude of the current sense signal crosses the peak inductor
current threshold. This turns off the pFET switch and turns on the
nFET synchronous rectifier, which sends a negative voltage across
the inductor, causing the inductor current to decrease. The
synchronous rectifier stays on for the rest of the cycle.
The ADP2147 regulates the output voltage by adjusting the peak
inductor current threshold.
PWM/
PSM
EN
VIN
I
LIMIT
LOW
CURRENT
DRIVER
AND
ANTISHOO T-
THROUGH
THERMAL
SHUTDOWN
SW
GND
09885-027
POWER SAVE MODE
The ADP2147 smoothly transitions to the power save mode of
operation when the load current decreases below the power
save mode current threshold. When the ADP2147 enters power
save mode, an offset is induced in the PWM regulation level,
which makes the output voltage rise. When the output voltage
reaches a level approximately 1.5% above the PWM regulation
level, PWM operation turns off. At this point, both power
switches are off, and the ADP2147 enters idle mode. C
discharges until V
falls to the PWM regulation voltage, at
OUT
which point the device drives the inductor to cause V
OUT
OUT
again to the upper threshold. This process is repeated for as long as
the load current is below the power save mode current
threshold.
Power Save Mode Current Threshold
The power save mode current threshold is set to 100 mA. The
ADP2147 employs a scheme that ensures that this current is
accurately controlled and independent of V
and V
IN
OUT
levels.
The control scheme also ensures that there is very little hysteresis
between the power save mode current threshold and that of the
PWM mode. The power save mode current threshold is optimized for excellent efficiency across all load currents.
ENABLE/SHUTDOWN
The ADP2147 starts operating with soft start when the EN pin
is toggled from logic low to logic high. Pulling the EN pin low
forces the device into shutdown mode, reducing the supply
current to 0.2 A (typical).
to rise
Rev. 0 | Page 11 of 16
ADP2147
SIMPLE DYNAMIC VOLTAGE SCALING (DVS)
The ADP2147 has a VSEL pin that allows the user to force the
output voltage to change from one level (the default VOUT
setting) when VSEL is low and to another level (the alternate
VOUT setting) when VSEL is high. Transition between VOUT
levels is achieved within 40 µs when VOUT is commanded to go
from a lower voltage to a higher voltage. When VOUT is commanded to go from a higher VOUT voltage to a lower one, the
transition time depends on the load current present at that time.
SHORT-CIRCUIT PROTECTION
The ADP2147 includes frequency foldback to prevent output
current runaway on a hard short. When the voltage at the
feedback pin falls below half the target output voltage, indicating the possibility of a hard short at the output, the switching
frequency is reduced to half the internal oscillator frequency.
The reduction in the switching frequency allows more time for
the inductor to discharge, preventing a runaway of output current.
UNDERVOLTAGE LOCKOUT
To protect against battery discharge, undervoltage lockout
(UVLO) circuitry is integrated on the ADP2147. If the input
voltage drops below the 2.15 V UVLO threshold, the ADP2147
shuts down, and both the power switch and the synchronous
rectifier turn off. When the voltage rises above the UVLO
threshold, the soft start period is initiated, and the part is
enabled.
THERMAL PROTECTION
In the event that the ADP2147 junction temperature rises above
150°C, the thermal shutdown circuit turns off the regulator.
Extreme junction temperatures can be the result of high current
operation, poor circuit board design, or high ambient temperature.
A 20°C hysteresis is included so that when thermal shutdown
occurs, the ADP2147 does not return to operation until the onchip temperature drops below 130°C. When coming out of
thermal shutdown, a soft start is initiated.
SOFT START
The ADP2147 has an internal soft start function that ramps the
output voltage in a controlled manner upon startup, thereby
limiting the inrush current. The soft start minimizes input
voltage drop when a battery or a high impedance power source is
connected to the regulator’s input.
After the EN pin is driven high, internal circuits begin to power
up. Start-up time in the ADP2147 is the measure of when the
output is in regulation after the EN pin is driven high. Start-up
time consists of the power-up time plus the soft start time.
CURRENT LIMIT
The ADP2147 has protection circuitry to limit the amount of
positive current flowing through the PFET switch and the
synchronous rectifier. The positive current limit on the power
switch controls the amount of current that can flow from the
power source to the output. The negative current limit prevents
the inductor current from reversing direction and flowing out
of the load.
100% DUTY OPERATION
With a drop in VIN or with an increase in I
eventually reaches a limit where, even with the pFET switch on
100% of the time, V
At this limit, the ADP2147 smoothly transitions to a mode
where the PFET switch stays on 100% of the time. When the input
conditions change again and the required duty cycle falls, the
ADP2147 immediately restarts PWM regulation without
allowing overshoot on V
drops below the desired output voltage.
OUT
.
OUT
, the ADP2147
LOAD
Rev. 0 | Page 12 of 16
ADP2147
APPLICATIONS INFORMATION
EXTERNAL COMPONENT SELECTION
Trade-offs between performance parameters such as efficiency
and transient response can be made by varying the choice of
external components in the applications circuit, as shown in
Figure 1.
Inductor
The high switching frequency of the ADP2147 allows for the
selection of small chip inductors. For best performance, use
inductor values between 0.7 H and 3 H. Recommended
inductors are shown in Tab le 6.
The peak-to-peak inductor current ripple is calculated using
the following equation:
VVV
−×
I
RIPPLE
OUT
LfV
××
2
)(
Dimensions
(mm)
I
SAT
(mA)
DCR
(mΩ)
I
RIPPLE
OUT
=
IN
IN
SW
where:
f
is the switching frequency.
SW
L is the inductor value.
The minimum dc current rating of the inductor must be greater
than the inductor peak current. The inductor peak current is
calculated using the following equation:
II+=
PEAK
)(
MAXLOAD
Inductor conduction losses are caused by the flow of current
through the inductor, which has an associated internal DCR.
Larger sized inductors have smaller DCR, which may decrease
inductor conduction losses. Inductor core losses are related to
the magnetic permeability of the core material. Because the
ADP2147 is a high switching frequency dc-to-dc regulator,
shielded ferrite core material is recommended for its low core
losses and low electromagnetic interference (EMI). Tab l e 6
shows the suggested inductors that can be used for different
output current requirements; several inductors are also listed to
minimize PCB space for small current applications.
Increasing the value of the output capacitor reduces the output
voltage ripple and improves load transient response. When
choosing the capacitor value, it is also important to account for
the loss of capacitance due to dc output voltage bias.
Ceramic capacitors are manufactured with a variety of dielectrics,
each with different behavior over temperature and applied voltage.
Capacitors must have a dielectric adequate to ensure the
minimum capacitance over the necessary temperature range
and dc bias conditions. X5R or X7R dielectrics with a voltage
rating of 6.3 V or 10 V are recommended for best performance.
Y5V and Z5U dielectrics are not recommended for use with any
dc-to-dc regulator because of their poor temperature and dc bias
characteristics.
The worst-case capacitance, accounting for capacitor variation
over temperature, component tolerance, and voltage, is
calculated using the following equation:
C
= C
EFF
× (1 − TEMPCO) × (1 − TOL)
OUT
where:
C
is the effective capacitance at the operating voltage.
EFF
TEMPCO is the worst-case capacitor temperature coefficient.
TOL is the worst-case component tolerance.
In this example, the worst-case temperature coefficient (TEMPCO)
over −40°C to +85°C is assumed to be 15% for an X5R dielectric.
The tolerance of the capacitor (TOL) is assumed to be 10%, and
C
is 4.0466 F at 1.8 V, as shown in Figure 34.
OUT
Substituting these values in the equation yields
C
= 4.0466 F × (1 − 0.15) × (1 − 0.1) = 3.0956 F
EFF
To guarantee the performance of the ADP2147, it is imperative
that the effects of dc bias, temperature, and tolerances on the
behavior of the capacitors be evaluated for each application.
6
5
4
3
2
CAPACITANCE (µ F)
1
0
0123456
Figure 34. Typical Capacitor Performance
DC BIAS VOL TAGE (V)
09885-029
The peak-to-peak output voltage ripple for the selected output
capacitor and inductor values is calculated using the following
equation:
V
RIPPLE
=
()
π
SW
IN
CLf
××××
22
OUT
RIPPLE
SW
CfI××=8
OUT
V
Rev. 0 | Page 13 of 16
ADP2147
E
Capacitors with lower equivalent series resistance (ESR) are
preferred to guarantee low output voltage ripple, as shown in
the following equation:
V
ESR≤
COUT
RIPPLE
I
RIPPL
The effective capacitance needed for stability, which includes
temperature and dc bias effects, is 3 µF.
Higher value input capacitors help to reduce the input voltage
ripple and improve transient response. Maximum input
capacitor current is calculated using the following equation:
−
VVV
CIN
IN
≥
II
MAXLOAD
OUT
)(
V
IN
OUT
)(
To minimize supply noise, place the input capacitor as close to
the VIN pin of the ADP2147 as possible. As with the output
capacitor, a low ESR capacitor is recommended. The list of
recommended capacitors is shown in Tabl e 8.
Because of the high efficiency of the ADP2147, only a small
amount of power is dissipated inside the ADP2147 package, which
reduces thermal constraints of the design.
However, in applications with maximum loads at high ambient
temperature, low supply voltage, and high duty cycle, the heat
dissipated in the package is high enough that it may cause the
junction temperature of the die to exceed the 125°C maximum.
If the junction temperature exceeds 150°C, the converter enters
thermal shutdown. The regulator recovers when the junction
temperature falls below 130°C.
The junction temperature of the die is the sum of the ambient
temperature of the environment and the temperature rise of the
package due to power dissipation, as shown in the following
equation:
T
= TA + TR
J
where:
TJ is the junction temperature.
T
is the ambient temperature.
A
T
is the rise in temperature of the package due to power
R
dissipation.
The package’s rise in temperature is directly proportional to the
power dissipation in the package. The proportionality constant
for this relationship is the thermal resistance from the junction
of the die to the ambient temperature, as shown in the following
equation:
T
= θJA × PD
R
where:
T
is the rise in temperature of the package.
R
θJA is the thermal resistance from the junction of the die to the
ambient temperature of the package.
P
is the power dissipation in the package.
D
PCB LAYOUT GUIDELINES
Poor layout can affect the ADP2147 performance, causing EMI
and electromagnetic compatibility problems, ground bounce,
and voltage losses. Poor layout can also affect regulation and
stability. To implement a good layout, use the following rules:
•Place the inductor, input capacitor, and output capacitor
close to the IC using short tracks. These components carry
high switching frequencies, and large tracks act as antennas.
•Route the output voltage path away from the inductor and
SW node to minimize noise and magnetic interference.
•Maximize the size of ground metal on the component side
to help with thermal dissipation.
•Use a ground plane with several vias connecting to the com-
ponent side ground to further reduce noise interference on
sensitive circuit nodes.