ANALOG DEVICES ADP190 Service Manual

Logic Controlled,

FEATURES

Low RDSON of 105 mΩ at 1.8 V
Internal output discharge resistor (ADP191)
Turn-on slew rate limiting (ADP191)
Low input voltage range: 1.1 V to 3.6 V
500 mA continuous operating current
Built-in level shift for control logic that can be operated

by 1.2 V logic
Low 2 μA (maximum) ground current
Ultralow shutdown current: <1 μA
Ultrasmall 0.8 mm × 0.8 mm, 4-ball, 0.4 mm pitch WLCSP

APPLICATIONS

Mobile phones
Digital cameras and audio devices
Portable and battery-powered equipment

High-Side Power Switches

ADP190/ADP191

TYPICAL APPLICATIONS CIRCUIT

ADP190

VIN VOUT

+

GND

–

ON

EN

OFF

ADP191

VIN VOUT

+

GND

–

ON

EN

OFF

LEVEL SHIFT

AND SLEW

RATE CONTROL

Figure 1.

LEVEL SHIFT

AND SLEW

RATE CONTROL

AND LOAD

DISCHARGE

Figure 2.

LOAD

LOAD

07874-001

07874-102

GENERAL DESCRIPTION

The ADP190/ADP191 are high-side load switches designed for
operation from 1.1 V to 3.6 V. These load switchs provide power
domain isolation for extended power battery life. The devices
contain a low on-resistance P-channel MOSFET that supports
more than 500 mA of continuous current and minimizes power
loss. The low 2 A (maximum) of ground current and ultralow
shutdown current make the ADP190/ADP191 ideal for battery­operated portable equipment. The built-in level shifter for enable
logic makes the ADP190/ADP191 compatible with modern
processors and GPIO controllers.

The ADP191 controls the turn-on slew rate of the switch to
reduce the input inrush current. The ADP191 also incorporates
an internal output discharge resistor to discharge the output
capacitance when the ADP191 output is disabled.

Beyond operating performance, the ADP190/ADP191 occupy
minimal printed circuit board (PCB) space with an area less than

0.64 mm

2

and a height of 0.60 mm. It is available in an ultrasmall

0.8 mm × 0.8 mm, 4-ball, 0.4 mm pitch WLCSP.

Rev. D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
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Tel: [phone] www.analog.com
Fax: [phone] ©2009-2010 Analog Devices, Inc. All rights reserved.

ADP190/ADP191

TABLE OF CONTENTS

Features.............................................................................................. 1

Applications....................................................................................... 1

Typical Applications Circuit............................................................ 1

General Description ......................................................................... 1

Revision History ............................................................................... 2

Specifications..................................................................................... 3

Timing Diagram........................................................................... 4

Absolute Maximum Ratings............................................................ 5

Thermal Data ................................................................................ 5

Thermal Resistance ...................................................................... 5

ESD Caution.................................................................................. 5

REVISION HISTORY

11/10—Rev. C to Rev. D

Changed 4 m to 4 M in Theory of Operation Section .......... 9

3/10—Rev. B to Rev. C

Change to Low Input Voltage Range Value................ Throughout

1/10—Rev. A to Rev. B

Added ADP191.............................................................. Throughout

Changes to Table 1............................................................................ 3

Changes to Table 3............................................................................ 5

Changes to Ordering Guide.......................................................... 15

9/09—Rev. 0 to Rev. A

Changes to Ordering Guide.......................................................... 13

1/09—Revision 0: Initial Version

Pin Configuration and Function Descriptions..............................6

Typical Performance Characteristics..............................................7

Theory of Operation .........................................................................9

Applications Information.............................................................. 10

Ground Current.......................................................................... 10

Enable Feature ............................................................................ 10

Timing ......................................................................................... 10

Thermal Considerations............................................................ 12

PCB Layout Considerations...................................................... 14

Outline Dimensions....................................................................... 15

Ordering Guide .......................................................................... 15

Rev. D | Page 2 of 16

ADP190/ADP191

SPECIFICATIONS

VIN = 1.8 V, VEN = VIN, I

Table 1. ADP190

Parameter Symbol Test Conditions Min Typ Max Unit

INPUT VOLTAGE RANGE VIN T
EN INPUT

EN Input Threshold V

1.3 V < VIN < 1.8 V, TJ = −40°C to +85°C 0.4 1.2 V

1.8 V ≤ VIN ≤ 3.6 V, TJ = −40°C to +85°C 0.45 1.2 V

Logic High Voltage VIH 1.1 V ≤ VIN ≤ 3.6 V 1.1 V

Logic Low Voltage VIL 1.1 V ≤ VIN ≤ 3.6 V 0.3 V

EN Input Pull-Down Resistance REN 4 MΩ

CURRENT

Ground Current1 I

Shutdown Current I

EN = GND, TJ = −40°C to +85°C 2 µA
VIN to VOUT RESISTANCE RDSON
V
V
V
V
V
VOUT TIME

Turn-On Delay Time t

Turn-On Delay Time t

1

Ground current includes EN pull-down current.

= 200 mA, TA = 25°C, unless otherwise noted.

LOAD

= −40°C to +85°C 1.1 3.6 V

J

1.1 V ≤ VIN ≤ 1.3 V, TJ = −40°C to +85°C 0.3 1.0 V

EN_TH

V

GND

EN = GND 0.1 µA

OFF

ON_DLY

ON_DLY

= 3.6 V, VOUT open, TJ = −40°C to +85°C 2 µA

IN

= 3.6 V, I

IN

= 2.5 V, I

IN

= 1.8 V, I

IN

= 1.5 V, I

IN

= 1.2 V, I

IN

I

= 200 mA, EN = 1.5 V, C

LOAD

VIN = 3.6 V, I

= 200 mA, EN = 1.5 V 80 mΩ

LOAD

= 200 mA, EN = 1.5 V 90 mΩ

LOAD

= 200 mA, EN = 1.5 V 105 130 mΩ

LOAD

= 200 mA, EN = 1.5 V 125 mΩ

LOAD

= 200 mA, EN = 1 V 160 mΩ

LOAD

= 200 mA, EN = 1.5 V, C

LOAD

= 1 F 5 s

LOAD

= 1 F 1.5 s

LOAD

Table 2. ADP191

Parameter Symbol Test Conditions Min Typ Max Unit

INPUT VOLTAGE RANGE VIN T

= −40°C to +85°C 1.1 3.6 V

J

EN INPUT

EN Input Threshold V

1.1 V ≤ VIN ≤ 1.3 V, TJ = −40°C to +85°C 0.3 1.0 V

EN_TH

1.3 V < VIN < 1.8 V, TJ = −40°C to +85°C 0.4 1.2 V

1.8 V ≤ VIN ≤ 3.6 V, TJ = −40°C to +85°C 0.45 1.2 V

Logic High Voltage VIH 1.1 V ≤ VIN ≤ 3.6 V 1.1 V

Logic Low Voltage VIL 1.1 V ≤ VIN ≤ 3.6 V 0.3 V

EN Input Pull-Down Resistance REN 4 MΩ

CURRENT

Ground Current1 I

Shutdown Current I

V

GND

EN = GND 0.1 µA

OFF

= 3.6 V, VOUT open, TJ = −40°C to +85°C 2 µA

IN

EN = GND, TJ = −40°C to +85°C 2 µA
VIN to VOUT RESISTANCE RDSON
V
V
V
V
V
VOUT DISCHARGE RESISTANCE R

215 Ω

DIS

= 3.6 V, I

IN

= 2.5 V, I

IN

= 1.8 V, I

IN

= 1.5 V, I

IN

= 1.2 V, I

IN

= 200 mA, EN = 1.5 V 80 mΩ

LOAD

= 200 mA, EN = 1.5 V 90 mΩ

LOAD

= 200 mA, EN = 1.5 V 105 130 mΩ

LOAD

= 200 mA, EN = 1.5 V 125 mΩ

LOAD

= 200 mA, EN = 1 V 160 mΩ

LOAD

VOUT TIME

Turn-On Delay Time t

Turn-On Delay Time t

1

Ground current includes EN pull-down current.

I

ON_DLY

VIN = 3.6 V, I

ON_DLY

= 200 mA, EN = 1.5 V, C

LOAD

= 200 mA, EN = 1.5 V, C

LOAD

= 1 F 80 s

LOAD

= 1 F 50 s

LOAD

Rev. D | Page 3 of 16

ADP190/ADP191

V

TIMING DIAGRAM

TURN-ON

DELAY

90%

10%

EN

TURN-OFF

DELAY

V

OUT

TURN-ON

RISE

TURN-OFF

Figure 3. Timing Diagram

FALL

07874-003

Rev. D | Page 4 of 16

ADP190/ADP191

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter Rating

VIN to GND Pins −0.3 V to +4.0 V
VOUT to GND Pins −0.3 V to VIN
EN to GND Pins −0.3 V to +4.0 V
Continuous Drain Current

TA = 25°C ±1 A

TA = 85°C ±500 mA

Continuous Diode Current −50 mA
Storage Temperature Range −65°C to +150°C
Operating Junction Temperature Range −40°C to +125°C
Soldering Conditions JEDEC J-STD-020

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.

THERMAL DATA

Absolute maximum ratings apply individually only, not in
combination. The ADP190/ADP191can be damaged when the
junction temperature limits are exceeded. Monitoring ambient
temperature does not guarantee that T
temperature limits. In applications with high power dissipation
and poor PCB thermal resistance, the maximum ambient

is within the specified

J

Junction-to-ambient thermal resistance (θ
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θ
PCB material, layout, and environmental conditions. The speci­fied values of θ
See JESD51-7 and JESD51-9 for detailed information regarding
board construction. For additional information, see the AN-617
application note, MicroCSP

Ψ

is the junction-to-board thermal characterization parameter

JB

with units of °C/W. Ψ
calculation using a 4-layer board. The JESD51-12 document,

Guidelines for Reporting and Using Electronic Package Thermal
Information, states that thermal characterization parameters are

not the same as thermal resistances. Ψ
power flowing through multiple thermal paths rather than through
a single path, as in thermal resistance (θ
paths include convection from the top of the package as well as
radiation from the package, factors that make Ψ
in real-world applications. Maximum junction temperature (T
is calculated from the board temperature (T
dissipation (P

T

= TB + (PD × ΨJB)

J

See JESD51-8, JESD51-9, and JESD51-12 for more detailed
information about Ψ

temperature may need to be derated.

In applications with moderate power dissipation and low PCB
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits. The junction temperature (T
the device is dependent on the ambient temperature (T
power dissipation of the device (P
thermal resistance of the package (θ

Maximum junction temperature (T
ambient temperature (T

) and power dissipation (PD) using the

A

), and the junction-to-ambient

D

).

JA

) is calculated from the

J

), the

A

) of

J

THERMAL RESISTANCE

and ΨJB are specified for the worst-case conditions, that is, a

θ

JA

device soldered in a circuit board for surface-mount packages.

Table 4. Thermal Resistance

Package Type θJA ΨJB Unit

4-Ball, 0.4 mm Pitch WLCSP 260 58.4 °C/W

ESD CAUTION

formula

= TA + (PD × θJA)

T

J

are based on a 4-layer, 4 inch × 3 inch PCB.

JA

TM

Waf er L e vel Ch i p Scal e Pa ckage.

of the package is based on modeling and

JB

) using the formula

D

.

JB

) of the package is

JA

may vary, depending on

JA

measures the component

JB

). Therefore, ΨJB thermal

JB

more useful

JB

) and the power

B

)

J

Rev. D | Page 5 of 16