Power input voltage range: 2.95 V to 20 V
On-board bias regulator
Minimum output voltage: 0.6 V
0.6 V reference voltage with ±1.0% accuracy
Supports all N-channel MOSFET power stages
Available in 300 kHz, 600 kHz, and 1.0 MHz options
No current-sense resistor required
Power saving mode (PSM) for light loads (ADP1871 only)
Resistor-programmable current-sense gain
Thermal overload protection
Short-circuit protection
Precision enable input
Integrated bootstrap diode for high-side drive
Starts into a precharged load
Small, 10-lead MSOP and LFCSP packages
APPLICATIONS
Telecom and networking systems
Mid to high end servers
Set-top boxes
DSP core power supplies
12 V input POL supplies
GENERAL DESCRIPTION
The ADP1870/ADP1871 are versatile current-mode, synchronous
step-down controllers that provide superior transient response,
optimal stability, and current-limit protection by using a constant
on-time, pseudo-fixed frequency with a programmable currentlimit, current-control scheme. In addition, these devices offer
optimum performance at low duty cycles by utilizing valley
current-mode control architecture. This allows the ADP1870/
ADP1871 to drive all N-channel power stages to regulate output
voltages as low as 0.6 V.
The ADP1871 is the power saving mode (PSM) version of the
device and is capable of pulse skipping to maintain output
regulation while achieving improved system efficiency at light
loads (see the Power Saving Mode (PSM) Version (ADP1871)
section for more information).
Available in three frequency options (300 kHz, 600 kHz, and
1.0 MHz, plus the PSM option), the ADP1870/ADP1871 are well
suited for a wide range of applications that require a single-input
power supply range from 2.95 V to 20 V. Low voltage biasing is
supplied via a 5 V internal LDO.
ADP1870/ADP1871
TYPICAL APPLICATIONS CIRCUIT
= 2.95V TO 2 0
IN
C
C
C
C2
R
C
R
TOP
OUT
R
BOT
C
VREG2
C
VREG
100
VIN = 5V (PSM)
95
90
85
80
75
70
65
60
VIN = 13V (PSM)
55
EFFICIENCY (%)
50
45
VIN = 16.5V (PS M )
40
35
30
25
101001k10k100k
Figure 2. Efficiency vs. Load Current (V
In addition, an internally fixed soft start period is included to limit
input in-rush current from the input supply during startup and
to provide reverse current protection during soft start for a precharged output. The low-side current-sense, current-gain scheme
and integration of a boost diode, along with the PSM/forced pulsewidth modulation (PWM) option, reduce the external part count
and improve efficiency.
The ADP1870/ADP1871 operate over the −40°C to +125°C
junction temperature range and are available in a 10-lead MSOP
and LFCSP packages.
VIN
ADP1870/
ADP1871
COMP/EN BST
FBDRVH
GNDSW
VREGDRVL
PGND
C
BST
R
RES
Figure 1.
VIN = 16.5V
VIN = 13V
TA = 25°C
V
= 1.8V
OUT
f
= 300kHz
SW
WÜRTH INDUCTOR:
744325120, L = 1. 2µH, DCR = 1.8m
INFINEON FETs:
BSC042N03MS G (UPPER/ LOWER)
LOAD CURRENT (mA)
= 1.8 V, 300 kHz)
OUT
C
IN
Q1
L
V
OUT
C
OUT
Q2
LOAD
08730-001
08730-102
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Changes to Ordering Guide ................................................................... 42
3/10—Revision 0: Initial Version
Rev. A | Page 2 of 44
ADP1870/ADP1871
SPECIFICATIONS
All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC). V
− VSW = V
V
BST
REG
− V
RECT_DROP
(see Figure 40 to Figure 42). VIN = 12 V. The specifications are valid for TJ = −40°C to +125°C,
unless otherwise specified.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
POWER SUPPLY CHARACTERISTICS
High Input Voltage Range VIN C
= 22 µF to PGND (at Pin 1)
IN
ADP1870ARMZ-0.3/ADP1871ARMZ-0.3 (300 kHz) 2.95 12 20 V
ADP1870ARMZ-0.6/ADP1871ARMZ-0.6 (600 kHz) 2.95 12 20 V
ADP1870ARMZ-1.0/ADP1871ARMZ-1.0 (1.0 MHz) 3.25 12 20 V
Quiescent Current I
Shutdown Current
Q_REG
I
REG,SD
I
BST,SD
+ I
VFB = 1.5 V, no switching 1.1 mA
Q_BST
+
COMP/EN < 285 mV 190 280 A
Undervoltage Lockout UVLO Rising VIN (see Figure 35 for temperature variation) 2.65 V
UVLO Hysteresis Falling VIN from operational state 190 mV
INTERNAL REGULATOR
CHARACTERISTICS
VREG Operational Output Voltage V
VREG should not be loaded externally because it is
intended to only bias internal circuitry.
C
REG
VREG
= 1 µF to PGND, 0.22 µF to GND, VIN = 2.95 V to 20 V ADP1870ARMZ-0.3/ADP1871ARMZ-0.3 (300 kHz) 2.75 5 5.5 V
ADP1870ARMZ-0.6/ADP1871ARMZ-0.6 (600 kHz) 2.75 5 5.5 V
ADP1870ARMZ-1.0/ADP1871ARMZ-1.0 (1.0 MHz) 3.05 5 5.5 V
VREG Output in Regulation VIN = 7 V, 100 mA 4.8 4.981 5.16 V
V
= 12 V, 100 mA 4.8 4.982 5.16 V
IN
Load Regulation 0 mA to 100 mA, VIN = 7 V 32 mV
0 mA to 100 mA, VIN = 20 V 33 mV
Line Regulation VIN = 7 V to 20 V, 20 mA 2.5 mV
V
VIN to V
Dropout Voltage 100 mA out of V
REG
= 7 V to 20 V, 100 mA 2.0 mV
IN
, VIN ≤ 5 V 300 415 mV
REG
Short VREG to PGND VIN = 20 V 229 320 mA
SOFT START
Soft Start Period See Figure 58 3.0 ms
ERROR AMPLIFER
FB Regulation Voltage VFB T
T
T
= +25°C 600 mV
J
= −40°C to +85°C 596 600 604 mV
J
= −40°C to +125°C 594.2 600 605.8 mV
J
Transconductance Gm 320 496 670 µS
FB Input Leakage Current I
V
FB, Leak
= 0.6 V, COMP/EN = released 1 50 nA
FB
CURRENT-SENSE AMPLIFIER GAIN
Programming Resistor (RES)
RES = 47 kΩ ± 1% 2.7 3 3.3 V/V
Value from DRVL to PGND
RES = 22 kΩ ± 1% 5.5 6 6.5 V/V
RES = none 11 12 13 V/V
RES = 100 kΩ ± 1% 22 24 26 V/V
SWITCHING FREQUENCY
ADP1870ARMZ-0.3/
Typical values measured at 50% time points with 0 nF
at DRVH and DRVL; maximum values are guaranteed
by bench evaluation
Output Source Resistance I
Output Sink Resistance I
Rise Time2 t
Fall Time2 t
Low-Side Driver
Output Source Resistance I
Output Sink Resistance I
Rise Time2 t
Fall Time2 t
Propagation Delays
DRVL Fall to DRVH Rise2 t
DRVH Fall to DRVL Rise2 t
SW Leakage Current I
Integrated Rectifier
Channel Impedance I
PRECISION ENABLE THRESHOLD
Logic High Level VIN = 2.9 V to 20 V, V
Enable Hysteresis VIN = 2.9 V to 20 V, V
COMP VOLTAGE
COMP Clamp Low Voltage V
COMP Clamp High Voltage V
COMP Zero Current Threshold V
THERMAL SHUTDOWN T
Thermal Shutdown Threshold Rising temperature 155 °C
Thermal Shutdown Hysteresis 15 °C
Hiccup Current Limit Timing 6 ms
1
The maximum specified values are with the closed loop measured at 10% to 90% time points (see Figure and Figure 61), C
MOSFETs being Infineon BSC042N03MSG.
2
Not automatic test equipment (ATE) tested.
600 kHz
= 2 V, TJ = 25°C 500 540 580 ns
OUT
= 0.8 V 82 110 ns
OUT
1.0 MHz
= 2 V, TJ = 25°C 285 312 340 ns
OUT
= 1.5 A, 100 ns, positive pulse (0 V to 5 V) 2.25 3 Ω
SOURCE
= 1.5 A, 100 ns, negative pulse (5 V to 0 V) 0.7 1 Ω
SINK
V
r,DR VH
V
f,DRV H
V
r,DR VL
V
f,DRV L
V
tpdhDRVH
V
tpdhDRVL
V
SWLEAK
COMP(l ow)
(2.75 V ≤ V
COMP(h igh)
(2.75 V ≤ V
COMP_ZC T
TMSD
− VSW = 4.4 V, CIN = 4.3 nF (see Figure 60) 25 ns
BST
− VSW = 4.4 V, CIN = 4.3 nF (see Figure 61) 11 ns
BST
= 1.5 A, 100 ns, positive pulse (0 V to 5 V) 1.6 2.2 Ω
SOURCE
= 1.5 A, 100 ns, negative pulse (5 V to 0 V) 0.7 1 Ω
SINK
= 5.0 V, CIN = 4.3 nF (see Figure 61) 18 ns
REG
= 5.0 V, CIN = 4.3 nF (see Figure 60) 16 ns
REG
− VSW = 4.4 V (see Figure 60) 15.4 ns
BST
− VSW = 4.4 V (see Figure 61) 18 ns
BST
= 25 V, VSW = 20 V, V
BST
= 10 mA 22 Ω
SINK
From disabled state, release COMP/EN pin to enable
device (2.75 V ≤ V
REG
≤ 5.5 V) 2.55 V
REG
≤ 5.5 V) 1.07 V
REG
= 5 V 110 µA
REG
= 2.75 V to 5.5 V 245 285 330 mV
REG
= 2.75 V to 5.5 V 37 mV
REG
0.47 V
≤ 5.5 V)
60
= 4.3 nF, and the upper- and lower-side
GATE
Rev. A | Page 4 of 44
ADP1870/ADP1871
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
VREG to PGND, GND −0.3 V to +6 V
VIN to PGND −0.3 V to +28 V
FB, COMP/EN to GND −0.3 V to (V
DRVL to PGND −0.3 V to (V
SW to PGND −2.0 V to +28 V
BST to SW −0.6 V to (V
BST to PGND −0.3 V to 28 V
DRVH to SW −0.3 V to V
PGND to GND
θJA (10-Lead MSOP)
2-Layer Board 213.1°C/W
4-Layer Board 171.7°C/W
θJA (10-Lead LFCSP)
4-Layer Board 40°C/W
Operating Junction Temperature
Range
Storage Temperature Range −65°C to +150°C
Soldering Conditions JEDEC J-STD-020
Maximum Soldering Lead
Temperature (10 sec)
±0.3 V
−40°C to +125°C
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Absolute maximum ratings apply individually only, not in
combination. Unless otherwise specified, all other voltages are
referenced to PGND.
REG
REG
REG
REG
+ 0.3 V)
+ 0.3 V)
+ 0.3 V)
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
θJA is specified for the worst-case conditions; that is, θJA is specified for the
device soldered in a circuit board for surface-mount packages.
1
Unit
JA
BOUNDARY CONDITION
In determining the values given in Ta b l e 2 and Ta ble 3 , natural
convection was used to transfer heat to a 4-layer evaluation board.
ESD CAUTION
Rev. A | Page 5 of 44
ADP1870/ADP1871
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
VIN
1
GND
FB
ADP1870/
2
ADP1871
3
TOP VIEW
4
(Not to Scale)
5
COMP/EN
VREG
NOTES
1. THE EXPOSED PAD MUST BE CONNECTED
TO GROUND.
Figure 3. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1 VIN High Input Voltage. Connect VIN to the drain of the upper-side MOSFET.
2 COMP/EN Output of the Internal Error Amplifier/IC Enable. When this pin functions as EN, applying 0 V to this pin disables the IC.
3 FB Noninverting Input of the Internal Error Amplifier. This is the node where the feedback resistor is connected.
4 GND
Analog Ground Reference Pin of the IC. All sensitive analog components should be connected to this ground
plane (see the Layout Considerations section).
5 VREG
Internal Regulator Supply Bias Voltage for the ADP1870/ADP1871 Controller (Includes the Output Gate Drivers).
A bypass capacitor of 1 µF directly from this pin to PGND and a 0.1 µF across VREG and GND are recommended.
VREG should not be loaded externally because it is intended to only bias internal circuitry.
6 DRVL
Drive Output for the External Lower-Side, N-Channel MOSFET. This pin also serves as the current-sense gain
setting pin (see Figure 69).
7 PGND Power GND. Ground for the lower-side gate driver and lower-side, N-channel MOSFET.
8 DRVH Drive Output for the External Upper-Side, N-Channel MOSFET.
9 SW Switch Node Connection.
10 BST
Bootstrap for the Upper-Side MOSFET Gate Drive Circuitry. An internal boot rectifier (diode) is connected
between VREG and BST. A capacitor from BST to SW is required. An external Schottky diode can also be
connected between VREG and BST for increased gate drive capability.
10
9
8
7
6
BST
SW
DRVH
PGND
DRVL
08730-003
Rev. A | Page 6 of 44
ADP1870/ADP1871
TYPICAL PERFORMANCE CHARACTERISTICS
100
95
90
VIN = 13V (PSM)
85
80
75
70
65
60
55
50
45
40
EFFICIENCY (%)
35
VIN = 16.5V (PS M )
30
25
20
15
10
5
0
101001k10k100k
TA = 25°C
V
OUT
f
= 300kHz
SW
WÜRTH INDUCTOR:
744325072, L = 0. 72µH, DCR = 1.3m
INFINEON FETs:
BSC042N03MS G (UPPER/ LOWER)
LOAD CURRENT (mA)
Figure 4. Efficiency—300 kHz, V
VIN = 13V
= 0.8V
VIN = 16.5V
= 0.8 V
OUT
08730-104
100
95
90
85
80
75
70
65
60
55
50
45
40
EFFICIENCY (%)
35
30
25
20
15
10
5
0
101001k10k100k
VIN = 13V (PSM)
VIN = 16.5V
(PSM)
Figure 7. Efficiency—600 kHz, V
VIN = 13V
VIN = 16.5V
TA = 25°C
= 0.8V
V
OUT
f
= 600kHz
SW
WÜRTH INDUCTOR:
744355147, L = 0. 47µH, DCR = 0.67m
INFINEON FETs:
BSC042N03MS G (UPPER/ LOWER)
LOAD CURRENT (mA)
= 0.8 V
OUT
08730-107
100
95
VIN = 5V (PSM)
90
85
80
75
70
65
60
55
50
45
40
EFFICIENCY (%)
35
30
25
20
15
10
5
0
VIN = 13V (PSM)
VIN = 16.5V (PS M )
101001k10k100k
LOAD CURRENT (mA)
Figure 5. Efficiency—300 kHz, V
100
VIN = 16.5V (PS M )
95
90
85
80
75
VIN = 13V (PSM)
70
65
60
55
50
45
40
EFFICIENCY (%)
35
30
25
20
15
10
5
0
101001k10k100k
LOAD CURRENT (mA)
Figure 6. Efficiency—300 kHz, V
VIN = 16.5V
VIN = 13V
TA = 25°C
= 1.8V
V
OUT
f
= 300kHz
SW
WÜRTH INDUCTOR:
744325120, L = 1. 2µH, DCR = 1.8m
INFINEON FETs:
BSC042N03MS G (UPPER/ LOWER)
= 1.8 V
OUT
VIN = 13V
VIN = 16.5V
TA = 25°C
= 7V
V
OUT
f
= 300kHz
SW
WÜRTH INDUCTOR:
7443551200, L = 2.0µH, DCR = 2.6m
INFINEON FETs:
BSC042N03MS G (UPPER/ LOWER)
= 7 V
OUT
100
95
90
85
VIN = 13V (PSM)
80
75
70
65
60
55
50
VIN = 16.5V (PSM)
45
40
EFFICIENCY (%)
35
30
25
20
15
10
5
0
101001k10k100k
08730-105
Figure 8. Efficiency—600 kHz, V
100
95
90
VIN = 16.5V (PS M )
85
80
75
70
65
60
55
50
45
40
EFFICIENCY (%)
35
30
25
20
15
10
5
0
101001k10k100k
08730-106
VIN = 13V (PSM)
VIN = 20V (PSM)
Figure 9. Efficiency—600 kHz, V
VIN = 13V
VIN = 16.5V
TA = 25°C
= 1.8V
V
OUT
f
= 600kHz
SW
WÜRTH INDUCTOR:
744325072, L = 0. 72µH, DCR = 1.3m
INFINEON FETs:
BSC042N03MS G (UPPER/ LOWER)
LOAD CURRENT (mA)
= 1.8 V
OUT
VIN = 16.5V
VIN = 20V
TA = 25°C
= 5V
V
OUT
f
= 600kHz
SW
WÜRTH INDUCTOR:
744318180, L = 1. 4µH, DCR = 3.2m
INFINEON FETs:
BSC042N03MS G (UPPER/ LOWER)
LOAD CURRENT (mA)
= 5 V
OUT
08730-108
08730-109
Rev. A | Page 7 of 44
ADP1870/ADP1871
100
95
90
85
80
75
70
VIN = 13V (PSM)
65
60
55
50
45
40
EFFICIENCY (%)
35
30
VIN = 16.5V (PS M )
25
20
15
10
5
0
101001k10k100k
Figure 10. Efficiency—1.0 MHz, V
VIN = 13V
VIN = 16.5V
TA = 25°C
= 0.8V
V
OUT
f
= 1.0MHz
SW
WÜRTH INDUCTOR:
744303012, L = 0. 12µH, DCR = 0.33m
INFINEON FETs:
BSC042N03MS G (UPPER/ LOWER)
LOAD CURRENT (mA)
= 0.8 V
OUT
08730-110
0.807
0.806
0.805
0.804
0.803
0.802
0.801
0.800
0.799
0.798
0.797
OUTPUT VOLTAGE (V)
0.796
0.795
VIN = 13V
0.794
0.793
0.792
+125°C
+25°C
–40°C
0200040006000800010,000
VIN = 16.5V
+125°C
+25°C
–40°C
LOAD CURRENT (mA)
Figure 13. Output Voltage Accuracy—300 kHz, V
OUT
08730-013
= 0.8 V
100
95
90
85
80
VIN = 13V (PSM)
75
70
65
60
55
50
45
40
VIN = 16.5V (PSM)
EFFICIENCY (%)
35
30
25
20
15
10
5
0
101001k10k100k
Figure 11. Efficiency—1.0 MHz, V
100
95
90
85
VIN = 13V (PSM)
80
75
70
65
60
55
VIN = 16.5V (PS M )
50
45
40
EFFICIENCY (%)
35
30
25
20
15
10
5
0
101001k10k100k
Figure 12. Efficiency—1.0 MHz, V
VIN = 13V
VIN = 16.5V
TA = 25°C
= 1.8V
V
OUT
f
= 1.0MHz
SW
WÜRTH INDUCTOR:
744303022, L = 0. 22µH, DCR = 0.33m
INFINEON FETs:
BSC042N03MS G (UPPER/ LOWER)
LOAD CURRENT (mA)
= 1.8 V
OUT
VIN = 13V
VIN = 16.5V
TA = 25°C
= 5V
V
OUT
f
= 1.0MHz
SW
WÜRTH INDUCTOR:
744355090, L = 0. 9µH, DCR = 1.6m