ANALOG DEVICES ADP1864 Service Manual

Constant Frequency Current-Mode
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FEATURES

Wide input voltage range: 3.15 V to 14 V Wide output voltage range: 0.8 V to input voltage Pin-to-pin compatible with LTC1772, LTC3801 Up to 94% efficiency
0.8 V ± 1.25% reference accuracy over temperature Internal soft start 100% duty cycle for low dropout voltage Current-mode operation for good line and load
transient response 7 μA shutdown supply current 235 μA quiescent supply current Short-circuit and overvoltage protection Small 6-lead TSOT package

APPLICATIONS

Wireless devices 1- to 3-cell Li-Ion battery-powered applications Set-top boxes Processor core power supplies Hard disk drives
Step-Down DC-to-DC Controller in TSOT
ADP1864

GENERAL DESCRIPTION

The ADP1864 is a compact, inexpensive, constant-frequency, current-mode, step-down dc-to-dc controller. The ADP1864 drives a P-channel MOSFET that regulates an output voltage as low as 0.8 V with ±1.25% accuracy, for up to 5 A load currents, from input voltages as high as 14 V.
The ADP1864 provides system flexibility by allowing accurate setting of the current limit with an external resistor, and the output voltage is easily adjustable using two external resistors. The ADP1864 includes an internal soft start to allow quick power-up while preventing input inrush current. Additional safety features include short-circuit protection, output overvoltage protection, and input undervoltage protection. Current-mode control provides fast and stable load transient performance, while the 580 kHz operating frequency allows a small inductor to be used in the system. To further the life of a battery source, the controller turns on the external P-channel MOSFET 100% of the duty cycle during dropout.
The ADP1864 operates over the −40°C to +125°C temperature range and is available in a small, low profile, 6-lead TSOT package.

TYPICAL APPLICATIONS DIAGRAM

25k
470pF
68pF
80.6k
174k
1
2
3
COMP
ADP1864
GND
FB
PGATE
CS
6
5
IN
4
Figure 1.
0.03
= 3.15V TO 14V
V
IN
10µF
5µH
2.5V, 2.0A
47µF
05562-001
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2005–2008 Analog Devices, Inc. All rights reserved.
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TABLE OF CONTENTS

Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Typical Applications Diagram ........................................................ 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Typical Performance Characteristics ............................................. 6
Theory of Operation ........................................................................ 8
Loop Startup .................................................................................. 8
Short-Circuit Protection .............................................................. 9
Undervoltage Lockout (UVLO) ................................................. 9
Overvoltage Lockout Protection (OVP).................................... 9
Soft Start .........................................................................................9
Applications Information .............................................................. 10
Duty Cycle ................................................................................... 10
Ripple Current ............................................................................ 10
Sense Resistor.............................................................................. 10
Inductor Value ............................................................................ 10
MOSFET ...................................................................................... 11
Diode ............................................................................................ 11
Input Capacitor ........................................................................... 11
Output Capacitor ........................................................................ 11
Feedback Resistors ..................................................................... 11
Layout Considerations ................................................................... 12
Example Applications Circuits ..................................................... 13
Outline Dimensions ....................................................................... 14
Ordering Guide .......................................................................... 14

REVISION HISTORY

4/08—Rev. A to Rev. B
Change General Description Section ............................................. 1
Deleted Figure 2 ................................................................................ 1
Change to FB Regulation Voltage Parameter ................................ 3
Change to MOSFET Section ......................................................... 11
Changes to Ordering Guide .......................................................... 14
2/07—Rev 0. to Rev. A
Updated Format .................................................................. Universal
Changes to Figure 1 .......................................................................... 1
Changes to General Description .................................................... 2
Changes to Specifications ................................................................ 3
Change to Figure 13 ......................................................................... 8
Replaced Layout Considerations Section .................................... 12
Replaced Example Applications Circuits Section ...................... 13
10/05—Revision 0: Initial Version
Rev. B | Page 2 of 16
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SPECIFICATIONS

VIN = 5 V, TJ = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
POWER SUPPLY
Input Voltage VIN 3.15 14 V
Quiescent Current IQ V
Shutdown Supply Current ISD V
Undervoltage Lockout Threshold V
V
UVLO
V ERROR AMPLIFIER
FB Input Current IFB V
V
Amplifier Transconductance VFB = 0.8 V, I
COMP Startup Threshold VIN = 3.15 V to 14 V, TJ = −40°C to +125°C 0.55 0.67 0.80 V
COMP Shutdown Threshold VIN = 3.15 V to 14 V, TJ = −40°C to +125°C 0.15 0.3 0.55 V
COMP Start-Up Current Source COMP = GND 0.25 0.6 0.95 μA
FB Regulation Voltage VIN = 3.15 V to 14 V, TJ = −40°C to +125°C 0.790 0.8 0.810 V
Overvoltage Protection Threshold V
Measured at FB, TJ = −40°C to +125°C 0.87 0.885 0.9 V
OVP
Overvoltage Protection Hysteresis 50 mV
CURRENT SENSE
Peak Current Sense Voltage TJ = −40°C to +125°C 90 125 mV
V
Current Sense Gain VCS to V
OUTPUT REGULATION
Line Regulation
Load Regulation
1
V
2
V
OSCILLATOR
Oscillator Frequency VFB = 0.8 V, TJ = −40°C to +125°C 500 580 650 kHz
V
FB Frequency Foldback Threshold 0.35 V
GATE DRIVE
Gate Rise Time C
Gate Fall Time C
Minimum On Time PGATE minimum low duration 190 ns
SOFT START POWER-ON TIME 1.1 ms
1
Line regulation is measured using the application circuit in . Line regulation is specified as the change in the FB voltage resulting from a 1 V change in
the IN voltage.
2
Load regulation is measured using the application circuit in . Load regulation is specified as the change in the FB voltage resulting from a 1 V change in the
COMP voltage. The COMP voltage range is typically 0.9 V to 2.3 V for the minimum to maximum load current condition.
= 3.15 V to 14 V, PGATE = IN 235 360 μA
IN
= 3.15 V to 14 V, COMP = GND 7 15 μA
IN
falling, TJ = −40°C to +125°C 2.75 2.90 3.01 V
IN
rising, TJ = −40°C to +125°C 2.85 3.00 3.15 V
IN
= 0.8 V, TJ = 25°C −20 −2 +20 nA
FB
= 0.8 V, TJ = −40°C to +125°C −40 −2 +40 nA
FB
= ±5 μA 0.24 mmho
COMP
= 3.15 V to 14 V, TJ = −40°C to +125°C 70 125 mV
IN
12 V/V
COMP
= 3.15 V to 14 V, VFB/VIN 0.12 mV/V
IN
−2 mV/V
FB/VCOMP
= 0 V 190 kHz
FB
= 3 nF 50 ns
GATE
= 3 nF 40 ns
GATE
Figure 1
Figure 1
Rev. B | Page 3 of 16
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ABSOLUTE MAXIMUM RATINGS

Table 2.
Parameter Rating
IN to GND −0.3 V to +16 V CS, PGATE to GND −0.3 V to (VIN + 0.3 V) FB, COMP to GND −0.3 V to +6 V θJA 2-Layer (SEMI Standard Board) 315°C/W θJA 4-Layer (JEDEC Standard Board) 186°C/W Operating Junction Temperature Range −40°C to +125°C Storage Temperature Range −65°C to +150°C Lead Temperature
Rework Temperature (J-STD-020B) 260°C Peak Reflow Temperature,
(20 sec to 40 sec, J-STD-020B)
260°C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ESD CAUTION

Rev. B | Page 4 of 16
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PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

PGATE
6
5
IN
4
CS
05562-003
Table 3. Pin Function Descriptions
Pin No. Mnemonic Description
1 COMP
Regulator Compensation Node. COMP is the output of the internal transconductance error amplifier. Connect a series RC from COMP to GND to compensate for the control loop. Add an extra high frequency capacitor between COMP and GND to further reduce switching jitter. The value of this is typically one-tenth of the main compensation capacitor. Pulling the COMP pin below 0.3 V disables the ADP1864 and turns off the external PFET.
2 GND
Analog Ground. Directly connect the compensation and feedback networks to GND, preferably with a small analog GND plane. Connect GND to the power ground (PGND) plane with a narrow track at a single point close to the GND pin. See the Layout Considerations section for more information.
3 FB
Feedback Input. Connect a resistive voltage divider from the output voltage to FB to set the output voltage. The regulation feedback voltage is 0.8 V. Place the feedback resistors as close as possible to the FB pin.
4 CS
Current Sense Input. CS is the negative input of the current sense amplifier. It provides the current feedback signal used to terminate the PWM on time. Place a current sense resistor between IN and CS to set the current limit. The current limit threshold is typically 125 mV.
5 IN
Power Input. IN is the power supply to the ADP1864 and the positive input of the current sense amplifier. Connect IN to the positive side of the input voltage source. Bypass IN to PGND with a 10 μF or larger capacitor as close as possible to the ADP1864. For additional high frequency noise reduction, add a 0.1 μF capacitor to PGND at the IN pin.
6 PGATE
Gate Drive Output. PGATE drives the gate of the external P-channel MOSFET. Connect PGATE to the gate of the external MOSFET.
COMP
1
ADP1864
2
GND
TOP VIEW
(Not to Scale)
3
FB
Figure 2. Pin Configuration
Rev. B | Page 5 of 16
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TYPICAL PERFORMANCE CHARACTERISTICS

0.810
VIN = 5V
0.805
0.8
0.7
0.6
0.5
COMP RISING
0.800
0.795
REFERENCE VO LTAGE (V)
0.790 –40 –20 0 20 40 60 10080 120
TEMPERATURE (°C)
Figure 3. Reference Voltage vs. Temperature
600
VIN = 5V
590
580
570
FREQUENCY (kHz)
560
550
–40 –20 0 20 40 60 10080 120
TEMPERATURE (°C)
Figure 4. Normalized Oscillator Frequency vs. Temperature
0.4
COMP (V)
0.3
0.2
0.1
05562-004
0
–40 –20 0 20 40 60 10080 120
TEMPERATURE (°C)
COMP FALLING
05562-007
Figure 6. COMP Shutdown Threshold vs. Temperature
2.52
2.50
2.48
(V)
2.46
OUT
V
2.44
2.42
05562-005
2.40 03
0.51.01.52.02.53.0
LOAD (A)
05562-008
.5
Figure 7. Typical Load Regulation (VIN = 5 V; See Figure 1)
3.10
3.05
3.00
2.95
(V)
2.90
IN
V
2.85
2.80
2.75
2.70 –40 –20 0 20 40 60 10080 120
UVLO FALLING
Figure 5. UVLO Voltage vs. Temperature (V
UVLO RI SING
TEMPERATURE ( °C)
Rising and VIN Falling)
IN
05562-006
Rev. B | Page 6 of 16
2.520
2.515
(V)
2.510
OUT
V
2.505
2.500 35791113
VIN (V)
Figure 8. Typical Line Regulation vs. Input Voltage (See Figure 19)
05562-009
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12
11
10
9
8
7
SHUTDOWN SUPPL Y CURRENT (µA)
6
5
–40 –20 0 20 40 60 10080 120
VIN = 4V
TEMPERATURE (° C)
VIN = 16V
VIN = 5V
VIN = 3.15V
Figure 9. Shutdown Supply Current vs. Temperature
310
290
270
(µA)
250
Q
I
230
210
VIN = 12V
VIN = 5V
VIN = 16V
VIN = 7V
VIN = 4V
VIN = 3.1V
05562-010
650
TEMPERATURE = 25°C
640
630
620
610
600
590
580
570
560
550
FREQUENCY (kHz)
540
530
520
510
500
357 1191
VIN (V)
3
Figure 11. Oscillator Frequency vs. Input Voltage
05562-012
190
–40 –20 0 20 40 60 10080 120
TEMPERATURE ( °C)
05562-011
Figure 10. Quiescent Current vs. Temperature
Rev. B | Page 7 of 16
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THEORY OF OPERATION

The ADP1864 is a constant frequency (580 kHz), current-mode buck controller. PGATE drives the gate of the external P-channel FET. The duty cycle of the external FET dictates the output voltage and the current supplied to the load.
The peak inductor current is measured across the external sense resistor, while the system output voltage is fed back through an external resistor divider to the FB pin.
At the start of every oscillator cycle, PGATE turns on the external FET, causing the inductor current, and therefore the current sense amplifier voltage, to increase. The inductor current increases until the current amplifier voltage equals the voltage at the COMP pin. This resets the internal flip-flop, causing PGATE to go high and turning off the external FET. The inductor current decreases until the beginning of the next oscillator period.
The voltage at the COMP node is the output of the internal error amplifier. The negative input of the error amplifier is the output voltage scaled by an external resistive divider, and the
= 3.15V TO 14
IN
CSIN
5 4
positive input to the error amplifier is driven by a 0.8 V band gap reference. An increase in the load current causes a small drop in the feedback voltage, in turn causing an increase in the COMP voltage and, therefore, the duty cycle. The resulting increase in the on time of the FET provides the additional current required by the load.

LOOP STARTUP

Pulling the COMP pin to GND disables the ADP1864. When the COMP pin is released from GND, an internal 0.6 μA current source charges the external compensation capacitor on the COMP node. Once the COMP voltage has charged to 0.67 V, the internal control blocks are enabled and COMP is pulled up to its minimum normal operating voltage (0.9 V). As the voltage at COMP continues to increase, the on time of the external FET increases to supply the required inductor current. The loop stabilizes completely once the COMP voltage is sufficiently high to support the load current. The regulation voltage at FB is 0.8 V.
V
VREF + 80mV
VREF
0.8V
0.8V
IN
6
PGATE
FB
3
V
IN
S
G
D
2.5V 2A
GND
COMP
15mV
SLOPE
COMP
DETECT
ICMP
0.6µA
RSI R
S
0.35V
Q
0.3V
UVLO, SWITCHING LOGIC AND
BLANKING
CIRCUIT
SHDN
SHDN
CMP
UVLO
OVP
EAMP
UV
VREF
0.8V
VREF
UVLO
2
V
IN
0.3V
1
OSC
FREQUENCY
FOLDBACK
SHORT-CIRCUIT
ADP1864
05562-013
Figure 12. Functional Block Diagram
Rev. B | Page 8 of 16
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SHORT-CIRCUIT PROTECTION

If there is a short across the output load, the voltage at the feedback pin (FB) drops rapidly. When the FB voltage drops below 0.35 V, the ADP1864 reduces the oscillator frequency to 190 kHz. The increase in the oscillator period allows the inductor additional time to discharge, preventing the output current from running away. Once the output short is removed and the feedback voltage increases above the 0.35 V threshold, the oscillator frequency returns to 580 kHz.

UNDERVOLTAGE LOCKOUT (UVLO)

To prevent erratic operation when the input voltage drops below the minimum acceptable voltage, the ADP1864 has an undervoltage lockout (UVLO) feature. If the input voltage drops below 2.90 V, PGATE is pulled high and the ADP1864 continues to draw its typical quiescent current. Current consump­tion continues to drop toward the shutdown current as input voltage is reduced. The ADP1864 is re-enabled and begins switching once the IN voltage is increased above the UVLO rising threshold (3.0 V).

OVERVOLTAGE LOCKOUT PROTECTION (OVP)

The ADP1864 provides an overvoltage protection feature to protect the system against output short circuits to a higher voltage supply. If the feedback voltage increases to 0.885 V, PGATE is held high, turning the external FET off. The FET continues to be held high until the voltage at FB decreases to
0.84 V, at which time the ADP1864 resumes normal operation.

SOFT START

The ADP1864 includes a soft start feature that limits the rate of increase in the inductor current once the part is enabled. Soft start is activated when the input voltage is increased above the UVLO threshold or COMP is released from GND. Soft start limits the inrush current at the input and limits the output voltage overshoot. The soft start control slope is set internally.
Rev. B | Page 9 of 16
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APPLICATIONS INFORMATION

DUTY CYCLE

To determine the worst-case inductor ripple current, output voltage ripple, and slope compensation factor, establish the system maximum and minimum duty cycle. The duty cycle is calculated by the equation
VV
+
D
=
LOAD(MAX)
I
I
OUT
VV
+
PCSV
Δ
+
MAXLOAD
()
PCSVSF
×
Δ
+
()
MAXLOAD
(1)
DIN
(2)
(3)
I
()
PEAK
2
(4)
I
()
PEAK
2
()
DCCycleDuty
where V
is the diode forward drop.
D
A typical Schottky diode has a forward voltage drop of 0.5 V.

RIPPLE CURRENT

Choose the peak-to-peak inductor ripple current between 20% and 40% of the maximum load current at the system’s highest input voltage. A good starting point for a design is to pick the peak-to-peak ripple current at 30% of the load current.
= 0.3 × I
ΔI
(PEAK)

SENSE RESISTOR

Choose the sense resistor value to provide the desired current limit. The internal current comparator measures the peak current (sum of load current and positive inductor ripple current) and compares it against the current limit threshold. The current sense resistor value is calculated by the equation
R
where PCSV is the peak current sense voltage, typically 0.125 V.
To ensure the design provides the required output load current over all system conditions, consider the variation in PCSV over temperature (see the Specifications section) as well as increases in ripple current due to inductor tolerance.
If the system is being operated with >40% duty cycle, incor­porate the slope compensation factor into the calculation.
R
where SF is the slope factor correction ratio, taken from Figure 13, at the system maximum duty cycle (minimum input voltage).
=
MINSENSE
()
=
()
MINSENSE
1.05
0.95
0.85
0.75
0.65
SLOPE FACTOR (SF)
0.55
0.45
0.35 01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
DUTY CYCL E
Figure 13. Slope Factor (SF) vs. Duty Cycle
05562-014
.0

INDUCTOR VALUE

The inductor value choice is important because it dictates the inductor ripple and, therefore, the voltage ripple at the output. When operating the part at >40% duty cycle, keep the inductor value low enough for the slope compensation to remain effective.
The inductor ripple current is inversely related to the inductor value.
IN
=Δ
I
()
PEAK
where
f is the oscillator frequency.
VV
×
fL
OUTOUT
×
⎜ ⎝
Smaller inductor values are usually less expensive, but increase the ripple current and the output voltage ripple. Too large an inductor value results in added expenses and can impede effective load transient responses at >40% duty cycle because it reduces the effect of slope compensation.
Start with the highest input voltage, and assuming the ripple current is 30% of the maximum load current,
IN
=
L
3.0
OUT
××
()
MAXLOAD
OUT
×
fI
)
VV
From this starting point, modify the inductance to obtain the right balance of size, cost, and output voltage ripple, while maintaining the inductor ripple current between 20% and 40% of the maximum load current.
+
VV
D
(5)
+
VV
DIN
+
VV
D
(6)
+
VV
DIN
Rev. B | Page 10 of 16
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MOSFET

Choose the external P-channel MOSFET based on the following: threshold voltage (V
, and gate charge.
R
DS(ON)
), maximum voltage and current ratings,
T
The minimum operating voltage of the ADP1864 is 3.15 V. Choose a MOSFET with a V
that is at least 1 V lower than
T
the minimum input supply voltage used in the application.
Ensure that the maximum ratings for MOSFET V
and VSD are
SG
a few volts greater than the maximum input voltage used with the ADP1864.
Estimate the rms current in the MOSFET under continuous conduction mode by
VV
+
I ×
=
()
rmsFET
DOUT
VV
+
DIN
(7)
I
LOAD
Derate the MOSFET current by at least 20% to account for inductor ripple and changes in the diode voltage.
The MOSFET power dissipation is the sum of the conducted and switching losses:
FET(COND)
= (I
PD
where T = 0.005/°C × T
)2 × (1 + T) × R
FET(rms)
J (FET)
− 25°C.
(8)
DS(ON)
Ensure the maximum power dissipation calculated is significantly less than the maximum rating of the MOSFET.

DIODE

The diode carries the inductor current during the off time of the external FET. The average current of the diode is, therefore, dependent on the duty cycle of the controller as well as the output load current.
OUT
I
where V
()
AVDIODE
is the diode forward drop.
D
=
1 (9)
⎜ ⎝
A typical Schottky diode has a forward drop voltage of 0.5 V.
A Schottky diode is recommended for best efficiency because it has a low forward drop and faster switching speed than junction diodes. If a junction diode is used it must be an ultrafast recovery diode. The low forward drop reduces power losses during the FET off time, and fast switching speed reduces the switching losses during PFET transitions.
+
VV
D
I
×
LOAD
+
VV
DIN

INPUT CAPACITOR

The input capacitor provides a low impedance path for the pulsed current drawn by the external P-channel FET. Choose an input capacitor whose impedance at the switching frequency is lower than the impedance of the voltage source (V
). The
IN
preferred input capacitor is a 10 μF ceramic capacitor due to its low ESR and low impedance.
For all types of capacitors, make sure the ripple current rating of the capacitor is greater than half of the maximum output load current.
Where space is limited, multiple capacitors can be placed in parallel to meet the rms current requirement. Place the input capacitor as close as possible to the IN pin of the ADP1864.

OUTPUT CAPACITOR

The ESR and capacitance value of the output capacitor determine the amount of output voltage ripple.
1
IV
×ΔΔ
⎜ ⎝
Cf
8
××
OUT
ESR
+
⎞ ⎟
(10)
C
OUT
where f is the oscillator frequency (typically 580 kHz).
Because the output capacitance is typically >40 μF, the ESR dominates the voltage ripple. Ensure the output capacitor ripple rating is greater than the maximum inductor ripple.
I
rms
1
×
OUT
×
32
×+
IND
VfL
××
IN
VVVV
OUT
(11)
⎟ ⎠
POSCAP™ capacitors from Sanyo offer a good size, ESR, ripple, and current capability trade-off.

FEEDBACK RESISTORS

The feedback resistors ratio sets the output voltage of the system.
ADP1864
R2
3
FB
R1
Figure 14. Two Feedback Resistors Used to Set Output Voltage
×=8.0
OUT
2
(12)
2
RR1R+
8.0
)
(13)
8.0
VV
OUT
V
R2R1
×=
Choose 80.6 kΩ for R2. Using higher values for R2 results in reduced output voltage accuracy, and lower values cause an increased voltage divider current, thus increasing quiescent current consumption.
V
OUT
05562-015
Rev. B | Page 11 of 16
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LAYOUT CONSIDERATIONS

Layout is important with all switching regulators, but is particu­larly important for high switching frequencies. Ensure all high current paths are as wide as possible to minimize track induc­tance, which causes spiking and electromagnetic interference (EMI). These paths are shown in bold in Figure 15. Place the current sense resistor and the input capacitor(s) as close to the IN pin as possible.
Keep the PGND connections for the diode, input capacitor(s), and output capacitor(s) as close together as possible on a wide PGND plane. Connect the PGND and GND planes at a single point with a narrow trace close to the ADP1864 GND connection.
Ensure the feedback resistors are placed as close as possible to the FB pin to prevent stray pickup. To prevent extra noise pickup on the FB line, do not allow the feedback trace from the output voltage to FB to pass right beside the drain of the external PFET. Add an extra copper plane at the connection of the FET drain and the cathode of the diode to help dissipate the heat generated by losses in those components.
All analog components are grouped together on the left side of the evaluation board (left side of the ADP1864 DUT, see Figure 16), including compensation and FB components. All power components are located on the right side of the board (MOSFET, inductor, input bypass capacitors, output capacitors, and power diode).
All noisy nodes (P-channel drain, power diode cathode, and inductor terminal) are located along the bottom portion of the evaluation board on the top layer (see Figure 16). A substantial amount of copper has been allocated for this area with ample track spacing to minimize coupling (crosstalk) effects during switching.
The FB tap is isolated and runs from the R
, along the upper
TOP
right portion of the board on the bottom layer (see Figure 17) to minimize EMI pickups emitted from the power components along the
bottom portion of the evaluation board’s top layer (see Figure 16). Sufficient track spacing is placed from the main power ground plane located near the center of the board to effectively decouple this track.
There are two ground planes on the top layer: the analog ground plane is on the left and the power ground plane on the right.
An analog ground pickup point projects down to the bottom layer and through a single narrow and isolated track (see Figure 17).
The P-channel gate should have an isolated trace (bottom layer) tying back to Pin 6 of the DUT by via connections.
R
R2
COMP
2 C1
R
TOP
R
BOTTOM
1
2
3
ADP1864
GND
FB
PGATE
CS
IN
6
5
R
S
4
CE1
U1 D1 L1
CE2
V
IN
PGND
V
OUT
05562-016
Figure 15. Application Circuit Showing High Current Paths (in Bold)
ISOLATED POWER GROUND PLANE. USE A SUBSTANTIA AMOUNT OF COPPER TO BE ST ACCOMMODATE THIS HIGH CURRENT PATH. ALSO PROVIDES AID FOR POW ER DISSIPAT ION.
CE1 CE2
R2 RSC1
V
C2
BOTTOM
R
TOP
FB TAP
ANALOG
GROUND TAP
D1
U1
NOISY POWER PLANE IS LOCATED ON THIS SIDE OF T HE BOARD TO ACCOMODATE SPI KY NODES AND MINIMI ZE EMI EFFECTS T O THE REST OF THE SYSTEM.
OUT
L1
Figure 16. Top Layer of an Example Layout for an ADP1864 Application
1
2
3
1
FB TAP FROM OUTPUT TO R
POWER COMPONENTS TO MINIMI ZE EMI P ICKUP.
2
ISOLATED TRACE FOR GATE CONNECTION OF THE PFET. ROUTING OF THIS CONNECT ION AWAY F ROM THE CATHODE OF D1 AND DRAIN O F PFET IS TO ENSURE T HAT NOISE DO ES NOT COUPLE INTO THIS TRACK.
3
ISOLATED TRACK FOR CONNECTING AGND T O PGND. T HIS HELPS MINIMIZ E STRAY PARASI TIC EFF ECTS TOW ARDS THE ANALO G COMPONENT S (FB AND COMPENSATION COMPONENTS).
. TRACE SHOUL D BE AWAY FROM
TOP
Figure 17. Bottom Layer of an Example Layout of an ADP1864 Application
05562-021
05562-020
Rev. B | Page 12 of 16
ADP1864
www.BDTIC.com/ADI

EXAMPLE APPLICATIONS CIRCUITS

25k
1
COMP
470pF
RSENSE LRC-L R1206-01-R030-F MOSFET FAIRCHIL D SEMI FDC638P INDUCTOR TO KO FDV0630-3R3M DIODE SYNSEMI SK22 CIN LMK325BJ106KN COUT SANYO P OSCAP 6TPB47M
68pF
80.6k
255k
2
GND
FB
3
ADP1864
Figure 18. Application Circuit for V
470pF
25k
68pF
80.6k
174k
1
2
3
COMP
ADP1864
GND
FB
PGATE
PGATE
CS
CS
6
5
IN
4
6
5
IN
4
0.03
= 3.3 V, 2 A Load
OUT
0.03
VIN = 4.5V TO 5.5V
10µF
3.3µH
V
= 3.15V TO 14V
IN
10µF
5µH
3.3V, 2.0A
47µF
2.5V, 2.0A
47µF
05562-018
RSENSE LRC-L R1206-01-R030-F MOSFET FAIRCHIL D SEMI FDC658P INDUCTOR SUMIDA CDRH6D38-5R0 DIODE VISHAY SSB43L CIN LMK325BJ106KN COUT SANYO P OSCAP 6TPB47M
Figure 19. Application Circuit for V
= 2.5 V, 2 A Load
OUT
05562-019
Rev. B | Page 13 of 16
ADP1864
R
www.BDTIC.com/ADI

OUTLINE DIMENSIONS

2.90 BSC
4526
1.60 BSC
13
PIN 1
INDICATO
*
0.90
0.87
0.84
0.10 MAX
*
COMPLIANT TO JEDEC STANDARDS MO-193-AA WITH
THE EXCEPTION OF PACKAGE HEIGHT AND THICKNESS.
1.90
BSC
0.50
0.30
Figure 20. 6-Lead Thin Small Outline Transistor Package [TSOT]
Dimensions shown in millimeters

ORDERING GUIDE

Model Temperature Range Package Description Package Option Branding
ADP1864AUJZ-R7 ADP1864-EVAL ADP1864-EVALZ
1
Z = RoHS Compliant Part.
2
V
= 2.5 V (variable), I
OUT
1
−40°C to +125°C 6-Lead Thin Small Outline Transistor Package [TSOT] UJ-6 P0N
2
Evaluation Board
1, 2
Evaluation Board
= 0 A to 3 A, VIN = 3.15 V to 14 V.
LOAD
2.80 BSC
0.95 BSC
*
1.00 MAX
(UJ-6)
SEATING PLANE
0.20
0.08 8°
0.60
0.45
0.30
Rev. B | Page 14 of 16
ADP1864
www.BDTIC.com/ADI
NOTES
Rev. B | Page 15 of 16
ADP1864
www.BDTIC.com/ADI
NOTES
©2005–2008 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D05562-0-4/08(B)
Rev. B | Page 16 of 16
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