4.25 Gbps 3.3V Low Noise
Preliminary Technical Data
FEATURES
Technology: high performance SiGe
Bandwidth: 3.2 GHz minimum
Input noise current density: 10 pA√Hz
Optical sensitivity: −22 dBm
Differential transimpedance: 4000 V/A
Power dissipation: 75 mW
Differential output swing: 250 mV p-p
Input current overload: +3.25 dBm
Output resistance: 50 Ω side
RSSI voltage and current ratio: 0.8V/mA
Low-freq cutoff: 15 kHz
On-chip PD filter: R
Die size: 0.7 mm × 1.2 mm
APPLICATIONS
4.25 Gbps optical modules
SFF-8472 compliant receivers
PIN/APD-TIA receive optical subassembly
SONET/GbE/FC optical receivers, transceivers, transponders
= 200 Ω CF = 20 pF
F
FUNCTIONAL BLOCK DIAGRAM
Transimpedance Amplifier
ADN2882
PRODUCT DESCRIPTION
The ADN2882 is a compact, high performance 3.3 V power
supply SiGe transimpedance amplifier (TIA) optimized for
small form factor 4.25 Gbps metro-access, Ethernet PIN/APDTIA modules and 1×/2×/4× Fibre channel receiver applications
and meets OC48 SR/IR sensitivity requirements. The ADN2882
is a single-chip solution for detecting photodiode current with a
differential output voltage. The ADN2882 features low input
referred noise current of 600 nA enabling −22 dBm sensitivity;
3.2 GHz minimum bandwidth enables up to 4.25 Gbps
operation; +3.25 dBm nominal operation at 10dB extinction
ratio. RSSI output signal proportional to average input current
is available for monitoring and alarm generation. To facilitate
assembly in small form factor packages such as a TO-46 or TO56 header, the ADN2882 integrates the photodiode filter
network on chip and features 15 kHz low frequency cutoff
without any external components. The ADN2882 chip area is
less than 1 mm
available in die form.
2
, operates with a 3.3 V power supply and is
3.3V
VCC_FILTER
FILTER
IN
Rev. PrD November 04 2004
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
200Ω
20pF
0.85V
GND
Figure 1. ADN2882 Block Diagram
1100Ω
VCC
50Ω50Ω
OUT
OUTB
5mA
GND
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
CAP
ADN2882 Preliminary Technical Data
TABLE OF CONTENTS
Electrical Specifications ...................................................................3
Pad Layout..........................................................................................6
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Pad Description ................................................................................ 5
REVISION HISTORY
07/04—Revision PrB July 27 2004
09/04 - Revision PrC Sept 30 2004: spec changes
11/04 – Revision PrD: RSSI added in
Pad Coordinates ............................................................................6
Die Information.............................................................................6
Assembly Recommendations...........................................................7
Rev. PrD Nov. 04 2004 | Page 2 of 10
Preliminary Technical Data ADN2882
ELECTRICAL SPECIFICATIONS
Table 1.
Parameter Conditions1 Min Typ Max Unit
DYNAMIC PERFORMANCE
Bandwidth (BW)2 −3 dB 3.3 3.8 GHz
Total Input RMS Noise (I
Small Signal Transimpedance (ZT) 100MHz 2800 3800 4800 V/A
Low Frequency Cutoff
Output Return Loss DC to 4.25GHz, differential −20 −12 dB
Input Overload Current3 Pavg TBD 3.25 dBm
Maximum Output Swing pk-pk diff, I
Output Data Transition Time 20% to 80% rise/fall time I
PSRR <10 MHz −40 dB
Group Delay Variation 50 MHz to 1.0 GHz TBD ps
Transimpedance Ripple 50 MHz to 1.0 GHz TBD dB
Total Jitter 10 µA < I
100 µA < I
Deterministic Jitter 10 µA < I
Linear Output Range
DC PERFORMANCE
Power Dissipation I
Input Voltage 0.85 V
Output Common Mode Voltage DC terminated to VCC Vcc − 0.12 V
Output Impedance Single-ended 50 Ω
PD FILTER Resistance RF 200 Ω
PD FILTER Capacitance CF 20 pF
RSSI Sensitivity I
RSSI Offset I
1
Min/Max VCC = +3.3 V ± 0.3 V, T
2
Photodiode capacitance CD = 0.5pF ± 0.15pF, photodiode resistance = 5 Ω . Load impedance = 50Ω (each output, ac-coupled).
3
–10
10
BER, 10 dB ER,
)2 DC to 4.0 GHz 520 TBD nA
RMS
= −40°C to +95°C; Typ V
a
= 10µA
I
IN
IIN = 500µA
= 2.0 mA 180 250 350 mV
IN,PK- PK
= 2.5 mA 40 ps
IN,PK- PK
≤ 100 µA TBD TBD ps
IN,PK- PK
≤ 2.0 µA TBD TBD ps
IN,PK- PK
≤ 100 µA 2 ps
IN,PK- PK
100 µA < I
IN,PK- PK
≤ 2.0 µA
Pk-pk, < 1dB compression
= 0 50 75 120 mW
IN,AVE
= 0 uA to 1 mA 0.8 V/mA
IN, AVE
= 0 uA TBD mV
IN, AVE
= 3.3 V, Ta = +25C.
CC
15
TBD
4
TBD
kHz
Ps
kHz
mV
Rev. PrD Nov. 04 2004 | Page 3 of 10
ADN2882 Preliminary Technical Data
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage (VCC to GND) 5 V
Maximum Input Current 10 mA
Storage Temperature Range −65°C to +125°C
Operating Ambient Temperature Range −40°C to +95°C
Maximum Junction Temperature 165°C
Die Attach Temperature (<60 seconds) 450°C
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Rating
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rev. PrD Nov. 04 2004 | Page 4 of 10
Preliminary Technical Data ADN2882
PAD DESCRIPTION
B
FILTER
RSSI
Table 3.
Pad No. Pad Name Function
1 GND Ground (input return).
2 IN Current input. Bond directly to PD anode.
3 TEST Test probe Pad. Leave floating.
4 FILTER Filter Output
5 FILTER Filter Output
6 GND Ground.
7 RSSI Voltage Output (provides average input current reading)
8 CAP Low Frequency setpoint. Connect with 1 nF capacitance to GND for < 15 kHz.
9 GND Ground.
10 GND Ground (output return).
11 OUTB Negative Output. Drives 50 Ω termination (ac or dc termination).
12 OUT Positive Output. Drives 50 Ω termination (ac or dc termination).
13 GND Ground (output return).
14 GND Ground.
15 VCCFILTER Filter Supply. Connect to VCC to enable on-chip 200 Ω, 20 pf Filter.
16 VCC 3.3 V positive Supply. Recommended bypass to GND is 200 pF RF capacitor.
17 VCC 3.3 V positive Supply. Recommended bypass to GND is 200 pF RF capacitor.
Rev. PrD Nov. 04 2004 | Page 5 of 10
ADN2882 Preliminary Technical Data
PAD LAYOUT
B
FILTER
RSSI
Figure 2.. Pad Layout
PAD COORDINATES
Table 4.
PAD # PAD X (um) Y (um)
1 GND −500 260
2 IN −500 130
3 TEST −500 10
4 FILTER −500 −120
5 FILTER −500 −260
6 GND −350 −260
7 RSSI −200 −260
8 CAP −50 −260
9 GND 130 −260
10 GND 500 −260
11 OUTB 350 −60
12 OUT 350 60
13 GND 500 260
14 GND 130 260
15 VCCFILTER −50 260
16 VCC −200 260
17 VCC −350 260
DIE INFORMATION
Die Size
0.7mm × 1.2mm
(edge-edge including 1mil scribe)
Die Thickness
10mils = 0.25mm
Passivation Openings
0.075 mm × 0.075 mm
(pads 1-8, 9, 10, 13, 15, 16, 17)
0.144mm × 0.075mm
(pads 9, 11, 12, 14)
Passivation Composition
5000Å Si3N4 (top)
+5000 Å SiO
Pad Composition
Al/1%Cu
Backside Contact
(bot)
2
Rev. PrD Nov. 04 2004 | Page 6 of 10
Preliminary Technical Data ADN2882
ASSEMBLY RECOMMENDATIONS
VPD
OUTB
Figure 3. 5-Pin TO-46 with External Photodiode Supply V
1× Vendor-Specific (0.3 mm × 0.3 mm) 4.25 Gbps Photo Diode
560pF
VCC
200pF
OUT
PD
1× ADN2882 (0.7 mm × 1.2 mm) Analog Devices SiGe 4.25 Gbps Transimpedance Amplifier
1× 200 pF RF single-layer capacitor
1× 560pF RF Single-layer capacitor
Notes
Minimize all GND bond wire lengths
Minimize IN, OUT and OUTB bond wire lengths
Maintain symmetry between IN and OUT/OUTB bond wires
Rev. PrD Nov. 04 2004 | Page 7 of 10
ADN2882 Preliminary Technical Data
ASSEMBLY RECOMMENDATIONS
VCC
200pF
OUTB
Figure 4. Recommended Layout for 4 pin TO-46
Ceramic
Standoff
OUT
1× Vendor-Specific (0.3 mm × 0.3 mm) 4.25 Gbps Photo Diode
1× ADN2882 (0.7 mm × 1.2 mm) Analog Devices SiGe 4.25 Gbps Transimpedance Amplifier
1× 200 pF RF single-layer capacitor
1× ceramic standoff
Notes
Minimize all GND bond wire lengths
Minimize IN, OUT and OUTB bond wire lengths
Maintain symmetry between IN and OUT/OUTB bond wires
Rev. PrD Nov. 04 2004 | Page 8 of 10
Preliminary Technical Data ADN2882
TYPICAL SIGNAL PERFORMANCE
Rev. PrD Nov. 04 2004 | Page 9 of 10
ADN2882 Preliminary Technical Data
PR04946-0-11/04(PrD)
ORDERING GUIDE
Model Temperature Package Description Package Option
ADN2882XCHIPS-WP -40oC to 95oC NA Tested Die
Rev. PrD Nov. 04 2004 | Page 10 of 10
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