Analog Devices ADN2882 prd Datasheet
4.25 Gbps 3.3V Low Noise
Preliminary Technical Data
FEATURES
Technology: high performance SiGe
Bandwidth: 3.2 GHz minimum
Input noise current density: 10 pA√Hz
Optical sensitivity: −22 dBm
Differential transimpedance: 4000 V/A
Power dissipation: 75 mW
Differential output swing: 250 mV p-p
Input current overload: +3.25 dBm
Output resistance: 50 Ω side
RSSI voltage and current ratio: 0.8V/mA
Low-freq cutoff: 15 kHz
On-chip PD filter: R
Die size: 0.7 mm × 1.2 mm
APPLICATIONS
4.25 Gbps optical modules
SFF-8472 compliant receivers
PIN/APD-TIA receive optical subassembly
SONET/GbE/FC optical receivers, transceivers, transponders
= 200 Ω CF = 20 pF
F
FUNCTIONAL BLOCK DIAGRAM
Transimpedance Amplifier
ADN2882
PRODUCT DESCRIPTION
The ADN2882 is a compact, high performance 3.3 V power
supply SiGe transimpedance amplifier (TIA) optimized for
small form factor 4.25 Gbps metro-access, Ethernet PIN/APDTIA modules and 1×/2×/4× Fibre channel receiver applications
and meets OC48 SR/IR sensitivity requirements. The ADN2882
is a single-chip solution for detecting photodiode current with a
differential output voltage. The ADN2882 features low input
referred noise current of 600 nA enabling −22 dBm sensitivity;
3.2 GHz minimum bandwidth enables up to 4.25 Gbps
operation; +3.25 dBm nominal operation at 10dB extinction
ratio. RSSI output signal proportional to average input current
is available for monitoring and alarm generation. To facilitate
assembly in small form factor packages such as a TO-46 or TO56 header, the ADN2882 integrates the photodiode filter
network on chip and features 15 kHz low frequency cutoff
without any external components. The ADN2882 chip area is
less than 1 mm
available in die form.
2
, operates with a 3.3 V power supply and is
3.3V
VCC_FILTER
FILTER
IN
Rev. PrD November 04 2004
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200Ω
20pF
0.85V
GND
Figure 1. ADN2882 Block Diagram
1100Ω
VCC
50Ω50Ω
OUT
OUTB
5mA
GND
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
CAP
ADN2882 Preliminary Technical Data
TABLE OF CONTENTS
Electrical Specifications ...................................................................3
Pad Layout..........................................................................................6
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Pad Description ................................................................................ 5
REVISION HISTORY
07/04—Revision PrB July 27 2004
09/04 - Revision PrC Sept 30 2004: spec changes
11/04 – Revision PrD: RSSI added in
Pad Coordinates ............................................................................6
Die Information.............................................................................6
Assembly Recommendations...........................................................7
Rev. PrD Nov. 04 2004 | Page 2 of 10
Preliminary Technical Data ADN2882
ELECTRICAL SPECIFICATIONS
Table 1.
Parameter Conditions1 Min Typ Max Unit
DYNAMIC PERFORMANCE
Bandwidth (BW)2 −3 dB 3.3 3.8 GHz
Total Input RMS Noise (I
Small Signal Transimpedance (ZT) 100MHz 2800 3800 4800 V/A
Low Frequency Cutoff
Output Return Loss DC to 4.25GHz, differential −20 −12 dB
Input Overload Current3 Pavg TBD 3.25 dBm
Maximum Output Swing pk-pk diff, I
Output Data Transition Time 20% to 80% rise/fall time I
PSRR <10 MHz −40 dB
Group Delay Variation 50 MHz to 1.0 GHz TBD ps
Transimpedance Ripple 50 MHz to 1.0 GHz TBD dB
Total Jitter 10 µA < I
100 µA < I
Deterministic Jitter 10 µA < I
Linear Output Range
DC PERFORMANCE
Power Dissipation I
Input Voltage 0.85 V
Output Common Mode Voltage DC terminated to VCC Vcc − 0.12 V
Output Impedance Single-ended 50 Ω
PD FILTER Resistance RF 200 Ω
PD FILTER Capacitance CF 20 pF
RSSI Sensitivity I
RSSI Offset I
1
Min/Max VCC = +3.3 V ± 0.3 V, T
2
Photodiode capacitance CD = 0.5pF ± 0.15pF, photodiode resistance = 5 Ω . Load impedance = 50Ω (each output, ac-coupled).
3
–10
10
BER, 10 dB ER,
)2 DC to 4.0 GHz 520 TBD nA
RMS
= −40°C to +95°C; Typ V
a
= 10µA
I
IN
IIN = 500µA
= 2.0 mA 180 250 350 mV
IN,PK- PK
= 2.5 mA 40 ps
IN,PK- PK
≤ 100 µA TBD TBD ps
IN,PK- PK
≤ 2.0 µA TBD TBD ps
IN,PK- PK
≤ 100 µA 2 ps
IN,PK- PK
100 µA < I
IN,PK- PK
≤ 2.0 µA
Pk-pk, < 1dB compression
= 0 50 75 120 mW
IN,AVE
= 0 uA to 1 mA 0.8 V/mA
IN, AVE
= 0 uA TBD mV
IN, AVE
= 3.3 V, Ta = +25C.
CC
15
TBD
4
TBD
kHz
Ps
kHz
mV
Rev. PrD Nov. 04 2004 | Page 3 of 10
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