Analog Devices ADN2880 prc Datasheet

Ω

3.2 Gbps 3.3 V Low Noise

Preliminary Technical Data

FEATURES

Technology: high performance SiGe
Bandwidth: 2.1GHz minimum
Input noise current density: 8 pA√Hz

Optical sensitivity: −24 dBm
Differential transimpedance: 5000 V/A
Power dissipation: 75 mW
Differential output swing: 250 mV p-p
Input current overload: +3.25 dBm
Output resistance: 50 Ω/side
Low-freq cutoff: 20 kHz
On-chip PD filter: R
RSSI voltage and current ratio: 0.8V/mA
Die size: 0.7 mm × 1.2 mm

APPLICATIONS

3.2 Gbps optical modules
SFF-8472 compliant receivers
PIN/APD-TIA receive optical subassembly
SONET/GbE/FC optical receivers, transceivers, transponders

PRODUCT DESCRIPTION

= 200 Ω CF = 20 pF

F

3.3V

FILTER

IN

VCC_FI L TER

200Ω

20pF

0.85V

GND

Figure 1. ADN2880 Block Diagram

1400

1100Ω

Transimpedance Amplifier

ADN2880

The ADN2880 is a compact, high performance 3.3 V power
supply SiGe transimpedance amplifier (TIA) optimized for
small-form-factor pluggable (SFP) optical receivers, up to

3.2 Gbps SFF/SPF optical receivers, and meets OC48 SR/IR
sensitivity requirements. The ADN2880 is a single-chip
solution for detecting photodiode current with a differential
output voltage. The ADN2880 features low input referred
noise current of 400 nA enabling −24 dBm sensitivity; 2.1
GHz minimum BW enables up to 3.2 Gbps operation; +3.25
dBm nominal operation at 10 dB extinction ratio. RSSI
output signal proportional to average input current is
available for monitoring and alarm generation. To facilitate
assembly in small form factor packages such as a TO-46 or
TO-56 header, the ADN2880 integrates the photodiode filter
network on chip and features 20 kHz low frequency cutoff
without any external components. The ADN2880 chip area
is less than 1 mm
available in die form.

VCC

GND

2

, operates with a 3.3 V power supply and is

50Ω50Ω

OU T
OU TB

RSSI

5mA

CAP

Rev. PrC

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ADN2880 Preliminary Technical Data

TABLE OF CONTENTS

Electrical Specifications ...................................................................3

Pad Layout..........................................................................................6

Absolute Maximum Ratings............................................................ 4

ESD Caution.................................................................................. 4

Pad Descriptions............................................................................... 5

REVISION HISTORY

07/04—Revision PrB

11/04 – Revision C – RSSI added.

Pad Coordinates ............................................................................6

Die Information.............................................................................6

Assembly Recommendations...........................................................7

Rev. PrC | Page 2 of 9

Preliminary Technical Data ADN2880

ELECTRICAL SPECIFICATIONS

Table 1.

Parameter Conditions1 Min Typ Max Unit

DYNAMIC PERFORMANCE

Bandwidth (BW)2 −3 dB 2.1 2.3 GHz

Total Input RMS Noise (I

Small Signal Transimpedance (ZT) 100 MHz 4000 5000 6000 V/A

Low Frequency Cutoff CAP = Open

Output Return Loss2 DC to 3.2 GHz, differential −20 −12 dB

Input Overload Current3 Pavg TBD 3.25 dBm

Maximum Output Swing pk-pk diff, I

Output Data Transition Time 20% to 80% rise/fall time I

PSRR < 10 MHz −35 dB

Group Delay Variation 50 MHz to 3.2 GHz TBD ps

Transimpedance Ripple 50 MHz to 3.2 GHz TBD dB

Total Jitter2 10 µA < I

100 µA < I

Deterministic Jitter2 10 µA < I

100 µA < I
DC PERFORMANCE

Power Dissipation I

Input Voltage 0.85 V

Output Common-Mode Voltage DC terminated to Vcc Vcc – 0.12 V

Output Impedance Single-ended 50 Ω

PD FILTER Resistance RF 200 Ω

PD FILTER Capacitance CF 20 pF

)2 DC to 3.2 GHz 375 400 nA

RMS

20 2 kHz

CAP = 1nF

= 2.0 mA 180 250 350 mV

IN,PK- PK

= 2.5 mA 55 ps

IN,PK- PK

≤ 100 µA TBD TBD ps

IN,PK- PK

≤ 2.0 µA TBD TBD ps

IN,PK- PK

≤ 100 µA 4 ps

IN,PK- PK

≤ 2.0 µA 8 ps

IN,PK- PK

= 0 mA 50 75 120 mW

IN,AVE

kHz

RSSI Sensitivity I

RSSI Offset I

= 0 uA to 1 mA 0.8 V/mA

IN, AVE

= 0 uA TBD mV

IN, AVE

1

Min/Max Vcc = +3.3V ± 0.3V, T

2

Photodiode capacitance CD = 0.7 pF ± 0.15 pF, photodiode resistance = 5 Ω input wire bond inductance LIN = 0.3nH ± 0.1nH, Output bond wire inductance L

0.8nH ± 0.1nH Load impedance = 50 Ω (each output, ac-coupled)

3

-10

10

BER, 10dB ER, 0.85 A/W PIN responsivity

= −40 °C to +95°C; Typ Vcc=3.3V, T

ambient

ambient

= +25C

OUT,OUTB

=

Rev. PrC | Page 3 of 9