ANALOG DEVICES ADN2880 Service Manual

3.2 Gbps, 3.3 V, Low Noise,

FEATURES

Bandwidth: 2.5 GHz
Optical sensitivity: −24.2 dBm
Differential transimpedance: 4400 V/A
Power dissipation: 70 mW
Differential output swing: 260 mV p-p
Input overload current: 4.3 mA p-p
On-chip RSSI function
Low frequency cutoff: 20 kHz
On-chip PD filter: R

= 200 Ω, CF = 20 pF

F

Die size: 0.7 mm × 1.2 mm

APPLICATIONS

3.2 Gbps or below optical receivers
SONET/GbE/FC optical receivers
SFF-8472-compliant receivers
PIN/APD-TIA receive optical subassemblies (ROSA)

1

Transimpedance Amplifier

ADN2880

GENERAL DESCRIPTION

The ADN2880 is a 3.3 V, high gain SiGe transimpedance
amplifier (TIA). The TIA converts the small signal current of a
photo detector into differential voltage output. The ADN2880
features a 315 nA typical input-referred noise, enabling an
optical sensitivity of −24.2 dBm (0.85 A/W PIN). With a
bandwidth of 2.5 GHz, the ADN2880 allows a data rate
operation up to 3.2 Gbps. Typical power dissipation is
approximately 70 mW.

To facilitate the assembly in small form factor packages, such
as TO-46 headers, the ADN2880 provides an on-chip RC filter
(200 Ω, 20 pF) and features a 20 kHz low frequency cutoff
without using an external capacitor. An on-chip RSSI circuit,
which generates a voltage proportional to the average photo­diode current, is also available for power monitoring and
assembly alignment.

The ADN2880 is available in die form. With a chip area of

1.2 mm × 0.7 mm, the TIA layout is specifically optimized for
TO-Can-based packages.

1

Based on 1550 nm PIN, responsivity = 0.85 A/W, ER = 9 dB, BER < 10

−10

.

FUNCTIONAL BLOCK DIAGRAM

3.3V
VCCFILTER VCC

FILTER

IN

20pF

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.

0.85V

GND GND CAP

50Ω200Ω 50Ω

1400Ω

Figure 1.

OUT
OUTB

5mA

RSSI

04945-001

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © 2005 Analog Devices, Inc. All rights reserved.

ADN2880

TABLE OF CONTENTS

Features .............................................................................................. 1

Pad Layout and Function Descriptions..........................................5

Applications....................................................................................... 1

General Description ......................................................................... 1

Functional Block Diagram .............................................................. 1

Revision History ............................................................................... 2

Electrical Specifications................................................................... 3

Absolute Maximum Ratings............................................................ 4

ESD Caution.................................................................................. 4

REVISION HISTORY

7/05—Revision 0: Initial Version

Typical Perform anc e Characte ristics ..............................................6

Assembly Recommendations...........................................................9

Outline Dimensions ....................................................................... 12

Die Information.......................................................................... 12

Ordering Guide .......................................................................... 12

Rev. 0 | Page 2 of 12

ADN2880

ELECTRICAL SPECIFICATIONS

Minimum/maximum VCC = 3.3 V ± 0.3 V, T

Table 1.

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

Bandwidth (BW)
Total Input Referred RMS Noise (I
Total Input Referred RMS Noise (I
Small Signal Transimpedance (ZT)

1

RMS

RMS

1

−3 dB 1.9 2.5 GHz
) CD = 0.8 pF, dc to 2.1 GHz 315 485 nA
) CD = 0.6 pF, dc to 2.1 GHz 300 nA

100 MHz, differential 2700 4400 6200 V/A
100 MHz, single-ended 1350 2200 3100 V/A
Low Frequency Cutoff CAP = open, IIN = 20 μA 20 kHz
CAP = 1 nF, IIN = 20 μA 1.0 kHz
Output Return Loss DC to 3.5 GHz, differential −26 −20 dB
Input Overload Current ER = 10 dB, at 95°C
Maximum Differential Output Swing I
Output Data Transition Time I
PSRR IIN = 0 mA, <10 MHz 39 dB
Group Delay Variation 1.0 GHz to 3.0 GHz 50 ps
Transimpedance Ripple 50 MHz to 1.0 GHz, single-ended 0.93 dB
Deterministic Jitter 10 μA < I
100 μA < I
10 μA < I
Linear Output Range Differential, <1 dB compression 210 mV p-p
Linear Input Current Range Single-ended, <1 dB compression 53 μA p-p

DC PERFORMANCE

Power Dissipation I
Input Voltage Compliance voltage 0.85 V
Output Common-Mode Voltage DC (50 Ω) terminated to VCC VCC − 0.12 V
Output Impedance Single-ended 50 Ω
PD FILTER Resistance R
PD FILTER Capacitance CF 20 pF
RSSI Gain I
RSSI Offset I
RSSI Accuracy 5 μA < I

20 μA < I

1

An equivalent I

= 13 μA current signal is applied to the TIA input. No input capacitor is applied.

IN, P-P

= −40°C to +95°C; typical VCC = 3.3 V, T

AMBIENT

1

= 2.0 mA 170 260 375 mV p-p

IN, P- P

= 1.0 mA; 20% to 80% rise/fall time 60 ps

IN, P-P

≤ 100 μA, K28.5 @ 3.2 Gbps 16 ps p-p

IN, P- P

≤ 2.0 mA, K28.5 @ 3.2 Gbps 25 ps p-p

IN, P- P

≤ 2.0 mA, PRBS 231 − 1 at OC48 (FEC) 38 ps p-p

IN, P- P

= 0 mA 70 110 mW

IN, AVE

F

= 5 μA to 1 mA 0.85 V/mA

IN, AVE

= 10 μA 8.0 mV

IN, AVE

≤ 20 μA ±7 %

IN, P- P

≤ 1 mA ±3 %

IN, P- P

= 25°C, unless otherwise noted.

AMBIENT

1

2.1

4.3 mA p-p

200 Ω

Rev. 0 | Page 3 of 12

ADN2880

ABSOLUTE MAXIMUM RATINGS

Table 2.

Parameter Rating

Supply Voltage (VCC to GND) 5 V
Maximum Voltage to All Input

and Output Signal Pins

Minimum Voltage to All Input

and Output Signal Pins
Maximum Input Current 10 mA
Storage Temperature Range −65°C to +125°C
Operating Ambient Temperature Range −40°C to +95°C
Maximum Junction Temperature 125°C
Die Attach Temperature (<30 sec) 410°C

VCC + 0.4 V

GND – 0.4 V

Stresses above those listed under Absolute Maximum Rating
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.

Rev. 0 | Page 4 of 12