Analog Devices ADN2847 Datasheet

3V Dual-Loop 50 Mbps to 3.3 Gbps
a
FEATURES 50 Mbps to 3.3 Gbps Operation Single 3.3 V Operation Typical Rise/Fall Time 80 ps Bias Current Range 2 mA to 100 mA Modulation Current Range 5 mA to 80 mA Monitor Photodiode Current 50 A to 1200 A Dual MPD Functionality for DWDM 50 mA Supply Current at 3.3 V Closed-Loop Control of Power and Extinction Ratio Full Current Parameter Monitoring Laser Fail and Laser Degrade Alarms Automatic Laser Shutdown, ALS Optional Clocked Data Supports FEC Rates 48-Lead (7 mm 7 mm) LFCSP Package 32-Lead (5 mm 5 mm) LFCSP Package Available in Die Form
Laser Diode Driver
ADN2847
APPLICATIONS SONET OC-1/3/12/48 SDH STM-0/1/4/16 Fibre Channel Gigabit Ethernet DWDM Dual MPD Wavelength Control

GENERAL DESCRIPTION

The ADN2847 uses a unique control algorithm to control both average power and extinction ratio of the laser diode, LD, after initial factory setup. External component count and PCB area are low as both power and extinction ratio control are fully integrated. Programmable alarms are provided for laser fail (end of life) and laser degrade (impending fail).
Optional dual MPD current monitoring is designed into the ADN2847 specifically for DWDM wavelength control.
MPD
GND
GND
GND
V
CC
IMPD
IMPD2
PSET
ERSET

FUNCTIONAL BLOCK DIAGRAM

V
IBMON
IMMON
IMPDMON
IMPDMON2
ALS
FAIL
DEGRADE
I
MOD
CONTROL
I
BIAS
PAV CAPERCAP
GNDGND
CC
IMODN
CLKSEL
ADN2847
LBWSETIDTONE
CC
V
GND
IMODP
I
BIAS
ASET
GND
DATAP
DATAN
CLKP
CLKN
V
CC
LD
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved.
ADN2847
–SPECIFICATIONS
(VCC = 3.0 V to 3.6 V. All specifications T otherwise noted.1 Typical values as specified at 25C.)
MIN
to T
, unless
MAX
Parameter Min Typ Max Unit Conditions/Comments
LASER BIAS (BIAS)
Output Current I
BIAS
Compliance Voltage 1.2 V
during ALS 0.1 mA
I
BIAS
ALS Response Time 5 µsI CCBIAS Compliance Voltage 1.2 V
MODULATION CURRENT (IMODP, IMODN)
Output Current I
MOD
Compliance Voltage 1.5 V
during ALS 0.1 mA
I
MOD
Rise Time (See Figure 4 for Typical Distribution) Fall Time (See Figure 5 for Typical Distribution) Random Jitter Pulsewidth Distortion
3
3
2 100 mA
CC
CC
2
V
V
580mA
CC
3
3
80 120 ps 80 120 ps
V
1 1.5 ps RMS 15 ps I
< 10% of nominal
BIAS
= 40 mA
MOD
MONITOR PD (MPD, MPD2)
Current 50 1200 µAAverage Current Compliance Voltage 1.65 V
POWER SET INPUT (PSET)
Capacitance 80 pF Monitor Photodiode Current into RPSET Resistor 50 1200 µAAverage Current Voltage 1.1 1.2 1.3 V
EXTINCTION RATIO SET INPUT (ERSET)
Allowable Resistance Range 1.2 25 k Voltage 1.1 1.2 1.3 V
ALARM SET (ASET)
Allowable Resistance Range 1.2 25 k Voltage 1.1 1.2 1.3 V Hysteresis 5 %
CONTROL LOOP Low Loop Bandwidth Selection
Time Constant 0.22 s LBWSET
2.25 s LBWSET = V
DATA INPUTS (DATAP, DATAN, CLKP, CLKN)
4
= GND
CC
V p-p (Single-Ended, Peak-to-Peak) 100 500 mV Data and Clock Inputs Are Input Impedance (Single-Ended) 50 AC-Coupled
5
(See Figure 1) 50 ps
t
SETUP
5
t
(See Figure 1) 100 ps
HOLD
LOGIC INPUTS (ALS, LBWSET, CLKSEL)
V
IH
V
IL
2.4 V
0.8 V
ALARM OUTPUTS (Internal 30 kΩ Pull-Up)
V
OH
V
OL
2.4 V
0.8 V
IDTONE
Compliance Voltage V
I
OUT
 
f
Ratio
I
IN
6
IN
0.01 1 MHz
–1.5 V
CC
2
User to Supply Current Sink in the Range of 50 µA to 4 mA
IBMON, IMMON, IMPDMON, IMPDMON2
IBMON, IMMON Division Ratio 100 A/A IMPDMON, IMPDMON2 1 A/A IMPDMON to IMPDMON2 Matching 2 % I Compliance Voltage 0 V
–1.2 V
CC
= 1200 µA
MPD
REV. 0–2–
ADN2847
Parameter Min Typ Max Unit Conditions/Comments
SUPPLY
7
I
CC
8
V
CC
NOTES
1
Temperature range: –40C to +85C.
2
The high speed performance for the die version of ADN2847 can be achieved when using the bonding diagram shown in Figure 3.
3
Measured into a 25 W load using a 11110000 pattern at 2.5 Gbps.
4
When the voltage on DATAP is greater than the voltage on DATAN, the modulation current flows in the IMODP pin.
5
Guaranteed by design and characterization. Not production tested.
6
IDTONE may cause eye distortion.
7
I
for power calculation on page 8 is the typical ICC given.
CCMIN
8
All VCC pins should be shorted together.
Specifications subject to change without notice.
3.0 3.3 3.6 V
50 mA I
BIAS
= I
MOD
= 0

ABSOLUTE MAXIMUM RATINGS

(TA = 25C, unless otherwise noted.)
1
VCC to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2 V
Digital Inputs (ALS, LBWSET, CLKSEL) . . –0.3 V to V
IMODN, IMODP . . . . . . . . . . . . . . . . . . . . . . . . . V
+ 0.3 V
CC
+ 1.2 V
CC
Operating Temperature Range
Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . .–40C to +85∞C
Storage Temperature Range . . . . . . . . . . . . . –65C to +150∞C
Junction Temperature (T 48-Lead LFCSP Package
Power Dissipation
q
Thermal Impedance3 . . . . . . . . . . . . . . . . . . . . . 25C/W
JA
max) . . . . . . . . . . . . . . . . . . . 150C
J
2
. . . . . . . . . . . . . . . . (TJ max – TA)/qJA W
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . 300∞C
32-Lead LFCSP Package
Power Dissipation
q
Thermal Impedance3 . . . . . . . . . . . . . . . . . . . . . 32C/W
JA
2
. . . . . . . . . . . . . . . . (TJ max – TA)/qJA W
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . 300∞C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
Power consumption formulae are provided on page 8.
3
q
is defined when part is soldered on a 4-layer board.
JA

ORDERING GUIDE

Temperature Package
Model Range Description
ADN2847ACP-32 –40C to +85∞C 32-Lead LFCSP ADN2847ACP-48 –40C to +85∞C 48-Lead LFCSP ADN2847ACP-32-RL –40C to +85∞C 32-Lead LFCSP ADN2847ACP-32-RL7 –40C to +85∞C 32-Lead LFCSP ADN2847ACP-48-RL –40C to +85∞C 48-Lead LFCSP
HOLD
t
H
DATAP/DATAN
CLKP
SETUP
t
S
Figure 1. Setup and Hold Time
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADN2847 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
REV. 0
–3–
ADN2847
2280m
2620m
3 GNDCLKSEL
GND2
GND2
GND2
2
V
CC
IMODN
IMODN
GND2
IMODP IMODP
GND2
GND2
I
BIAS
I
BIAS
CCBIAS
GND GND4
LBWSET
ASET
IBMON
ERSET
IMMON
PSET
GND
V
CC
IMPD
FAIL
ALS
IMPDMON2
Figure 2. Metallization Photograph
2280m
DEGRADEIDTONE
GNDGND3
GND
VCC4IMPD2IMPDMON
CLKN
CLKP
GND1
DATAP
DATAN
GND1
V
1
CC
GND
PAVCAP
ERCAP
DIE ROTATED 90 IN PACKAGE
1
BOTTOM
LEFT RIGHT
TOP
2620m
Figure 3. Bonding Diagram

DIE PAD COORDINATES*

Pad Number Pad Name x[m] Y[m]
1 TP1 (GND) –996 1026 2 LBWSET –996 853 3 ASET –996 679 4 ERSET –996 506 5 PSET –996 332
6 TP2 (GND) –996 159 7 IMPD –996 –15
8IMPDMON –996 506 9 IMPDMON2 –996 –361 10 IMPD2 –996 –534 11 GND4 –996 –724 12 V
4 –995 –964
CC
13 ERCAP –925 –1191 14 PAVCAP –777 –1191 15 TP3 (GND) –606 –1191 16 V
1 –389 –1191
CC
17 GND1 –200 –1191 18 DATAN –70 –1191 19 DATAP 83 –1191 20 GND1 263 –1191 21 CLKP 442 –1191 22 CLKN 596 –1191 23 TP4 (GND) 762 –1191 24 TP5 (GND) 996 –1109 25 TP6 (GND) 996 –935 26 CLKSEL 996 –762 27 DEGRADE 996 –589 28 FAIL 996 –415 29 ALS 996 –242
Pad Number Pad Name x[m] Y[m]
30 V
3 996 –19
CC
31 GND3 996 251 32 IMMON 996 441 33 IBMON 996 614 34 GND2 996 804 35 IDTONE 995 993 36 GND2 995 1133 37 GND2 867 1191 38 V
2 713 1191
CC
39 IMODN 500 1191 40 IMODN 396 1191 41 GND2 242 1191 42 IMODP 88 1191 43 IMODP –16 1191 44 GND2 –239 1191 45 GND2 –443 1191 46 I 47 I
BIAS
BIAS
633 1191772 1191
48 CCBIAS 912 1191
*With the origin in the center of the die (see Figure 2).
REV. 0–4–
48-Lead LFCSP
ADN2847

PIN CONFIGURATION

32-Lead LFCSP
29 GND2
28 IMODP
27 GND2
GND1 14
DATAP 13
DATAN 12
2
CC
26 IMODN
25 V
24 IBMON 23 IMMON 22 GND3 21 V 20 ALS 19 FAIL 18 DEGRADE 17 CLKSEL
CLKP 15
CLKN 16
3
CC
TP1 1
LBWSET 2
ASET 3
ERSET 4
PSET 5
TP2 6
IMPD 7
IMPDMON 8
IMPDMON2 9
IMPD2 10
GND4 11
4 12
V
CC
BIAS
BIAS
48 CCBIAS
47 I
46 I
45 GND2
PIN 1 INDICATOR
ADN2847
TOP VIEW
1 16
CC
TP3 15
V
ERCAP 13
PAVCAP 14
44 GND2
43 IMODP
42 IMODP
GND1 17
DATAP 19
DATAN 18
41 GND2
40 IMODN
39 IMODN
CLKP 21
CLKN 22
GND1 20
2
CC
37 GND2
38 V
TP5 24
TP4 23
36 GND2 35 IDTONE 34 GND2 33 IBMON 32 IMMON 31 GND3
3
30 V
CC
29 ALS 28 FAIL 27 DEGRADE 26 CLKSEL 25 TP6
LBWSET 1
ASET 2
ERSET 3
PSET 4 IMPD 5
IMPDMON 6
GND4 7
4 8
V
CC
BIAS
32 CCBIAS
31 I
30 GND2
PIN 1 INDICATOR
ADN2847
TOP VIEW
1 11
CC
V
ERCAP 9
PAVCAP 10

PIN FUNCTION DESCRIPTIONS

Pin Number 48-Lead 32-Lead Mnemonic Function
1 TP1 Test Pin. In normal operation, TP1 = GND. 21 LBWSET Select Low Loop Bandwidth 32 ASET Alarm Current Threshold Setting Pin 43 ERSET Extinction Ratio Set Pin 54 PSET Average Optical Power Set Pin 6 TP2 Test Pin. In normal operation, TP2 = GND. 75 IMPD Monitor Photodiode Input 86 IMPDMON Mirrored Current from Monitor Photodiode 9 IMPDMON2 Mirrored Current from Monitor Photodiode2 (for Use with Two MPDs) 10 IMPD2 Monitor Photodiode Input 2 (for Use with Two MPDs) 11 7 GND4 Supply Ground 12 8 V
4 Supply Voltage
CC
13 9 ERCAP Extinction Ratio Loop Capacitor 14 10 PAVCAP Average Power Loop Capacitor 15 TP3 Test Pin. In normal operation, TP3 = GND. 16 11 V
1 Supply Voltage
CC
17 GND1 Supply Ground 18 12 DATAN Data, Negative Differential Terminal 19 13 DATAP Data, Positive Differential Terminal 20 14 GND1 Supply Ground 21 15 CLKP Data Clock Positive Differential Terminal, Used if CLKSEL = V 22 16 CLKN Data Clock Negative Differential Terminal, Used if CLKSEL = V
CC
CC
23 TP4 Test Pin. In normal operation, TP4 = GND. 24 TP5 Test Pin. In normal operation, TP5 = GND. 25 TP6 Test Pin. In normal operation, TP6 = GND. 26 17 CLKSEL Clock Select (Active = V
), Used if Data Is Clocked into Chip
CC
27 18 DEGRADE DEGRADE Alarm Output 28 19 FAIL FAIL Alarm Output 29 20 ALS Automatic Laser Shutdown 30 21 V
3 Supply Voltage
CC
31 22 GND3 Supply Ground 32 23 IMMON Modulation Current Mirror Output 33 24 IBMON Bias Current Mirror Output
REV. 0
–5–
ADN2847
PIN FUNCTION DESCRIPTIONS (continued)
Pin Number 48-Lead 32-Lead Mnemonic Function
34 GND2 Supply Ground 35 IDTONE IDTONE (Requires External Current Sink to Ground) 36 GND2 Supply Ground 37 GND2 Supply Ground 38 25 V 39 26 IMODN Modulation Current Negative Output. Connect via a matching resistor to V 40 26 IMODN Modulation Current Negative Output. Connect via a matching resistor to V 41 27 GND2 Supply Ground 42 28 IMODP Modulation Current Positive Output. Connect to laser diode. 43 28 IMODP Modulation Current Positive Output. Connect to laser diode. 44 29 GND2 Supply Ground 45 30 GND2 Supply Ground 46 31 I 47 31 I 48 32 CCBIAS Extra Laser Diode Bias when AC-Coupled Current Sink
2 Supply Voltage
CC
BIAS
BIAS
Laser Diode Bias Current Laser Diode Bias Current
CC
CC
.
.
40
30
20
COUNT – %
10
0
76
78 80 82 84 86 88 90 92 94 96 98 100
RISE TIME – ps
Figure 4. Rise Time Distribution Under Worst­Case Operating Conditions
40
30
20
COUNT – %
10
0
82 84 86 88 90 92 94 96 98 100 102 104
80
FA LL TIME – ps
Figure 5. Fall Time Distribution Under Worst­Case Operating Conditions

GENERAL

Laser diodes have current-in to light-out transfer functions as shown in Figure 6. Two key characteristics of this transfer function are the threshold current, I
, and slope in the linear region
TH
beyond the threshold current, referred to as slope efficiency, LI.
P1
ER =
P0
P1 + P0
P
=
AV
2
P
P
LI =
I
I
TH
I
CURRENT
P
OPTICAL POWER
P1
AV
P0
Figure 6. Laser Transfer Function

Control

A monitor photodiode, MPD, is required to control the LD. The MPD current is fed into the ADN2847 to control the power and extinction ratio, continuously adjusting the bias current and modulation current in response to the lasers changing threshold current and light-to-current slope efficiency.
The ADN2847 uses automatic power control, APC, to maintain a constant average power over time and temperature.
The ADN2847 uses closed-loop extinction ratio control to allow optimum setting of extinction ratio for every device. Thus SONET/SDH interface standards can be met over device variation, temperature, and laser aging. Closed-loop modulation control eliminates the need to either overmodulate the LD or include external components for temperature compensation. This reduces research and development time and second sourcing issues caused by characterizing LDs.
Average power and extinction ratio are set using the PSET and ERSET pins, respectively. Potentiometers are connected between these pins and ground. The potentiometer R change the average power. The potentiometer R
is used to
PSET
ERSET
is used to
adjust the extinction ratio. Both PSET and ERSET are kept
1.2 V above GND.
REV. 0–6–
ADN2847
The R
PSET
and R
potentiometers can be calculated using the
ERSET
following formulas.
12.
V
I
12
×
AV
.
ER
ER
()
V
− +
1
×
1
()
P
AV
R
ERSET
=
R
PSET
I
MPD CW
P
CW
=
_
where:
IAV is the average MPD current.
P
is the dc optical power specified on the laser data sheet.
CW
is the MPD current at that specified PCW.
I
MPD_CW
PAV is the average power required.
ER is the desired extinction ratio (ER = P1/P0).
Note that I
ERSET
and I
will change from device to device;
PSET
however, the control loops will determine actual values. It is not required to know exact values for LI or MPD optical coupling.

Loop Bandwidth Selection

For continuous operation, the user should hardwire the LBWSET pin high and use 1 µF capacitors to set the actual loop bandwidth. These capacitors are placed between the PAVCAP and ERCAP pins and ground. It is important that these capacitors are low leakage multilayer ceramics with an insulation resistance greater than 100 Gor a time constant of 1000 sec, whichever is less.
Operation Recommended Recommended Mode LBWSET PAVCAP ERCAP
Continuous High 1 µF1 µF 50 Mbps to
3.3 Gbps Optimized Low 22 nF 22 nF for 2.5 Gbps
to 3.3 Gbps
Setting LBSET low and using 22 nF capacitors results in a shorter loop time constant (a 10× reduction over using 1 µF capacitors and keeping LBWSET high.)

Alarms

The ADN2847 is designed to allow interface compliance to ITU­T-G958 (11/94) section 10.3.1.1.2 (transmitter fail) and section
10.3.1.1.3 (transmitter degrade). The ADN2847 has two active high alarms, DEGRADE and FAIL. A resistor between ground and the ASET pin is used to set the current at which these alarms are raised. The current through the ASET resistor is a ratio of 100:1 to the FAIL alarm threshold. The DEGRADE alarm will be raised at 90% of this level.
Example:
ImAsoI mA
==50 45
FAIL DEGRADE
ImA
I
ASET
*
R
ASET
* The smallest valid value for R
maximum of 100 mA.
REV. 0
FAIL
== =
10050100
V
12 12
..
== =
IA
ASET
ASET
500
is 1.2 k, since this corresponds to the I
500 µ
2.4
A
k
BIAS
–7–
The laser degrade alarm, DEGRADE, is provided to give a warning of imminent laser failure if the laser diode degrades further or environmental conditions continue to stress the LD, such as increasing temperature.
The laser fail alarm, FAIL, is activated when the transmitter can no longer be guaranteed to be SONET/SDH compliant. This occurs when one of the following conditions arises:
The ASET threshold is reached.
The ALS pin is set high. This shuts off the modulation and bias currents to the LD, resulting in the MPD current dropping to zero. This gives closed-loop feedback to the system that ALS has been enabled.
DEGRADE will be raised only when the bias current exceeds 90% of ASET current.

Monitor Currents

IBMON, IMMON, IMPDMON, and IMPDMON2 are current controlled current sources from VCC. They mirror the bias, modu­lation, and MPD current for increased monitoring functionality. An external resistor to GND gives a voltage proportional to the current monitored.
If the monitoring functions IMPDMON and IMPDMON2 are not required, the IMPD and IMPD2 pins must be grounded and the monitor photodiode output must be connected directly to the PSET pin.

Dual MPD DWDM Function (48-Lead LFCSP Only)

The ADN2847 has circuitry for a second monitor photodiode, MPD2. The second photodiode current is mirrored to IMPDMON2 for wavelength control purposes and is summed internally with the first monitor photodiode current for the power control loop. For single MPD circuits, the MPD2 pin is tied to GND.
This enables the system designer to use the two currents to control the wavelength of the laser diode using various optical filtering techniques inside the laser module.
If the monitor current functions IMPDMON and IMPDMON2 are not required, then the IMPD and IMPD2 pins can be grounded and the monitor photodiode output can be connected directly to PSET.

IDTONE (48-Lead LFCSP Only)

The IDTONE pin is supplied for fiber identification/supervisory channels or control purposes in WDM. This pin modulates the optical one level over a possible range of 2% of minimum I to 10% of maximum I
. The level of modulation is set by
MOD
MOD
connecting an external current sink between the IDTONE pin and ground. There is a gain of two from this pin to the I
MOD
current.
Figure 9 shows how an AD9850/AD9851 or the AD9834 may be used with the ADN2847 to allow fiber identification.
If the ID_TONE function is not used, the IDTONE pin should be tied to V
. Note that using IDTONE during transmission
CC
may cause optical eye degradation.

Data, Clock Inputs

Data and clock inputs are ac-coupled (10 nF capacitors are recommended) and terminated via a 100 internal resistor between DATAP and DATAN, and also between the CLKP and CLKN pins. There is a high impedance circuit to set the common-mode voltage that is designed to allow for maximum input voltage
ADN2847
headroom over temperature. It is necessary that ac coupling is used to eliminate the need for matching between common­mode voltages.
ADN2847
DATAP
DATAN
(TO FLIP-FLOPS)
5050
V
REG
R
R = 2.5k, DATA R = 3k, CLK
400A TYP
Figure 7. AC Coupling of Data Inputs
For input signals that exceed 500 mV p-p single ended, it is necessary to insert an attenuation circuit as shown in Figure 8.
R1
R2
NOTE THAT RIN = 100 = THE DIFFERENTIAL INPUT IMPEDANCE OF THE ADN2847
DATAP /CLKP
R3
DATAN /CLKN
ADN2847
R
IN
Figure 8. Attenuation Circuit

CCBIAS

When the laser is used in ac-coupled mode, the CCBIAS and
pins should be tied together (Figure 12). In dc-coupled
I
BIAS
mode, CCBIAS should be tied to V
CC
.

Automatic Laser Shutdown

The ADN2847 ALS allows compliance to ITU-T-G958 (11/94), section 9.7. When ALS is logic high, both bias and modulation
currents are turned off. Correct operation of ALS can be confirmed by the FAIL alarm being raised when ALS is as­serted. Note that this is the only time DEGRADE will be low while FAIL is high.

Alarm Interfaces

The FAIL and DEGRADE outputs have an internal pull-up resistor of 30 kused to pull the digital high value to V
CC
. However, the alarm can be overdriven with an external resistor allowing alarm interfacing to non-V
output levels must be below the V
levels. Non-VCC alarm
CC
used for the ADN2847.
CC

Power Consumption

The ADN2847 die temperature must be kept below 125oC. Both LFCSP packages have an exposed paddle, which should be connected in such a manner that is is at the same potential as the ADN2847 ground pins. The θ
for both packages is shown
JA
in the Absolute Maximum Ratings. Power consumption can be calculated using
II I
= + 0.3
CC CCMIN MOD
PV I I V I V V
=×+ ×
CC CC BIAS BIAS PIN MOD MODP PIN MODN PIN
TT P
+
DIE AMBIENT A
Thus, the maximum combination of I
()
___
θ
J
()
+ I
BIAS
+
must be calcu-
MOD
/+2
lated. Where:
I
=
CCMIN
with I
T
DIE
T
AMBIENT
V
BIAS_PIN
V
MODP_PIN
V
MODN_PIN
50 mA, the typical value of ICC provided on page 3
BIAS
= I
MOD
= 0
= die temperature
= ambient temperature
= voltage at I
BIAS
pin
= average voltage at IMODP pin
= average voltage at IMODN pin

Laser Diode Interfacing

Many laser diodes designed for 2.5 Gbs operation are packaged with an internal resistor to bring the effective impedance up to 25 in order to minimize transmission line effects. In high current applications, the voltage drop across this resistor combined with the laser diode forward voltage makes direct connection between the laser and the driver impractical in a 3 V system. AC coupling the driver to the laser diode removes this headroom constraint.
REF CLOCK
20MHz–180MHz
10kHz–1MHz
0.125mA–2mA
BC550
500
50A–800A
1000
35
IDTONE
ADN2847
32
IMMON
CLKIN
AD9850/AD9851
AD9834
R
CONTROLLER
9
DDS
SET
1.25mA–20mA
21
20
12
37.5A–600A
I
OUT
I
OUT
50
50
LP FILTER
(DC-COUPLED)
BC550
AD8602
AD8602
1300
1/2
1/2
Figure 9. Application Curcuit to Allow Fiber Identification Using the AD9850/AD9851
REV. 0–8–
Caution must be taken when choosing component values for ac coupling to ensure that the time constants (L/R and RC, see Figure 12) are sufficiently long for the data rate and expected number of CIDs (consecutive identical digits). Failure to do this could lead to pattern dependent jitter and vertical eye closure.
For designs with low series resistance, or where external components become impractical, the ADN2847 supports direct connection to the laser diode (see Figure 11). In this case, care must be taken to ensure that the voltage drop across the laser diode does not violate the minimum compliance voltage on the IMODP pin.

Optical Supervisor

The PSET and ERSET potentiometers may be replaced with a dual-digital potentiometer, the ADN2850 (see Figure 10). The ADN2850 provides an accurate digital control for the average optical power and extinction ratio and ensures excellent stability over temperature.
ALS
ADN2847
V
CC
V
V
CC
IMPD
ADN2847
CLK
TX
RX
CS
ADN2850
SDI
SDO
CLK
CS
DAC1
DAC2
PSET
ERSET
DATAP DATAN
IDTONE
DATAP
IMODP
I
BIAS
DATAN
IDTONE
Figure 10. Application Using the ADN2850 a Dual 10-Bit Digital Potentiometer with an Extremely Low Temperature Coefficient as an Optical Supervisor
FAIL DEGRADE
CC
V
CC
MPD LD
36
37
GND2
2
V
*
V
CC
*
*
*
10H
V
LD = LASER DIODE MPD = MONITOR PHOTODIODE
CC
IMODN
IMODN
GND2
IMODP
IMODP
GND2
GND2
I
BIAS
I
BIAS
CCBIAS
48
CC
1
V
GND2
GND
CC
IDTONE
LBWSET
GND2
ASET
IBMON
IMMON
ERSET
** **
1k
1.5k1.5k
3
V
GND3
ADN2847
IMPD
GND
PSET
25
CC
ALS
FAIL
IMPDMON2
IMPDMON
1.5k
100nF 100nF 100nF 100nF
CLKSEL
DEGRADE
IMPD2
GND4
GND
GND
GND
CLKN
CLKP
GND1
DATAP
DATAN
GND1
V
CC
GND
PAV CAP
ERCAP
4
CC
V
12
V
CC
1
24
GND
10nF
CLKN
10nF
CLKP
10nF
DATAP
10nF
DATAN
22nF
22nF
13
VCCs SHOULD HAVE BYPASS CAPACITORS AS CLOSE AS POSSIBLE TO THE ACTUAL SUPPLY PINS
ON THE ADN2847 AND THE LASER DIODE USED. CONSERVATIVE DECOUPLING WOULD INCLUDE 100pF CAPACITORS IN PARALLEL WITH 10nF CAPACITORS.
10F
REV. 0
NOTES
* DESIGNATES COMPONENTS THAT NEED TO BE OPTIMIZED FOR THE TYPE OF LASER USED. **FOR DIGITAL PROGRAMMING, THE ADN2850 OR THE ADN2860 OPTICAL SUPERVISOR CAN BE USED.
GND
Figure 11. DC-Coupled 3.3 Gbps Test Circuit, Data Not Clocked
–9–
ADN2847
ALS
FAIL
DEGRADE
V
CC
MPD LD
V
CC
*
*
*
*
1H
LD = LASER DIODE MPD = MONITOR PHOTODIODE
*
*
*
37
GND2
V
IMODN
IMODN
*
*
*
GND2
IMODP
IMODP
GND2
GND2
I
I
CCBIAS
48
CC
BIAS
BIAS
1
V
CC
1.5k
36
GND2
GND2
IBMON
IDTONE
2
ERSET
ASET
LBWSET
GND
** **
1k
1.5k
GND3
IMMON
ADN2847
GND
PSET
25
3
CC
ALS
FAIL
V
IMPDMON2
IMPDMON
IMPD
1.5k
100nF 100nF 100nF 100nF
CLKSEL
DEGRADE
IMPD2
GND4
GND
GND
GND
CLKN
CLKP
GND1
DATAP
DATAN
GND1
V
CC
GND
PAV CAP
ERCAP
4
CC
V
12
V
CC
1
24
GND
10nF
CLKN
10nF
CLKP
10nF
DATAP
10nF
DATAN
1F
1F
13
VCCs SHOULD HAVE BYPASS CAPACITORS AS
CLOSE AS POSSIBLE TO THE ACTUAL SUPPLY PINS ON THE ADN2847 AND THE LASER DIODE USED. CONSERVATIVE DECOUPLING WOULD INCLUDE 100pF CAPACITORS IN PARALLEL WITH 10nF CAPACITORS.
10F
NOTES
* DESIGNATES COMPONENTS THAT NEED TO BE OPTIMIZED FOR THE TYPE OF LASER USED **FOR DIGITAL PROGRAMMING, THE ADN2850 OR THE ADN2860 OPTICAL SUPERVISOR CAN BE USED.
Figure 12. AC-Coupled 50 Mbps to 3.3 Gbps Test Circuit, Data Not Clocked
Figure 13. A 2.5 Gbps Optical Eye at 25°C. Average Power = 0 dBm, Extinction Ratio = 10 dB, PRBS 31 Pattern. Eye Obtained Using a DFB Laser.
GND
Figure 14. A 2.5 Gbps Optical Eye at 85°C. Average Power = 0 dBm, Extinction Ratio = 10 dB, PRBS 31 Pattern. Eye Obtained Using a DFB Laser.
REV. 0–10–

OUTLINE DIMENSIONS

48-Lead Frame Chip Scale Package [LFCSP]
(CP-48)
Dimensions shown in millimeters
ADN2847
1.00
0.90
0.80
0.25 REF
12MAX
SEATING PLANE
BSC SQ
PIN 1 INDICATOR
VIEW
7.00
0.60 MAX
TOP
0.70 MAX
0.65 NOM
0.50 BSC
COMPLIANT TO JEDEC STANDARDS MO-220-VKKD-2
6.75
BSC SQ
0.50
0.40
0.30
0.05 MAX
0.02 NOM
COPLANARITY
0.08
37
36
25
24
0.60 MAX
BOTTOM
VIEW
5.50
REF
32-Lead Frame Chip Scale Package [LFCSP]
(CP-32)
Dimensions shown in millimeters
0.30
0.23
0.18
PIN 1 INDICATOR
48
1
5.25
4.70
2.25
12
13
PIN 1
INDICATOR
1.00
0.90
0.80
12MAX
SEATING PLANE
5.00
BSC SQ
0.30
0.23
0.18
4.75
BSC SQ
0.25 REF
TOP
VIEW
0.70 MAX
0.65 NOM
COMPLIANT TO JEDEC STANDARDS MO-220-VHHD-2
0.05 MAX
0.02 NOM
COPLANARITY
0.60 MAX
0.50
BSC
0.50
0.40
0.30
0.08
0.60 MAX
25
24
17
16
BOTTOM
VIEW
3.50 REF
PIN 1
32
9
INDICATOR
1
3.25 SQ
3.10
2.95
8
REV. 0
–11–
C02745–0–1/03(0)
–12–
PRINTED IN U.S.A.
Loading...