Analog Devices ADN2830 a Datasheet

Continuous Wave Laser
a
FEATURES Bias Current Range 4 mA to 200 mA Monitor Photodiode Current 50 A to 1200 A Closed-Loop Control of Average Power Laser FAIL and Laser DEGRADE Alarms Automatic Laser Shutdown, ALS Full Current Parameter Monitoring 5 V Operation –40C to +85C Temperature Range 5 mm 5 mm 32-Lead LFCSP Package
APPLICATIONS Fiber Optic Communication
Average Power Controller
ADN2830

GENERAL DESCRIPTION

The ADN2830 provides closed-loop control of the average optical power of a continuous wave (CW) laser diode (LD) after initial factory setup. The control loop adjusts the laser IBIAS to maintain a constant back facet monitor photodiode (MPD) current and thus a constant laser optical power. The external PSET resistor is adjusted during factory setup to set the desired optical power. R is the MPD current corresponding to the desired optical power. Programmable alarms are provided for laser fail (end of life) and laser degrade (impending fail).
To provide monitoring of the MPD current, the MPD can be connected to the IMPD pin. In this case, the MPD current is mirrored to the IMPDMON pin to provide a monitor and internally to the PSET pin to close the control loop.
By closing the feedback using IBMON rather than an MPD connected to PSET, the device is configured to control a constant current in the laser rather than a constant optical output power.
is set at 1.23/IAV, where I
PSET
AV
R
MPD
PSET
V
GND
CC

FUNCTIONAL BLOCK DIAGRAM

IBMON IMPDMON ALS FAI L DEGRADE
IMPD
GND
PSET
GND
PAV CAP
CONTROL
MODE
V
GND
CC
IBIAS
ASET
LD
GND
V
CC
R
ASET
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ADN2830–SPECIFICATIONS
(VCC = 5 V 10%. All specifications T Typical values as specified at 25C.)
MIN
to T
, unless otherwise noted1.
MAX
Parameter Min Typ Max Unit Conditions/Comments
LASER BIAS (BIAS)
Output Current IBIAS 4 200 mA Compliance Voltage 1.2
V
CC
V IBIAS during ALS 40 µA ALS Response Time 10 µs
MONITOR PD (IMPD)
Current 50 1200 µA Input Voltage 1.6 V
POWER SET INPUT (PSET)
Capacitance 80 pF Input Current 50 1200 µA Voltage 1.15 1.23 1.35 V
ALARM SET (ASET)
Allowable Resistance Range 1.2 13 k Voltage 1.15 1.23 1.35 V Hysteresis 5 %
LOGIC INPUTS (ALS, MODE)
V
IH
V
IL
2.4 V
0.8 V
ALARM OUTPUTS (Internal 30 kΩ Pull-Up)
V
OH
V
OL
2.4 V
0.4 V
IBMON IMPDMON
IBMON, Division Ratio 100 A/A IMPDMON Division Ratio 1 A/A Compliance Voltage 0 VCC – 1.2 V
SUPPLY
2
I
CC
V
CC
NOTES
1
Temperature range: –40°C to +85°C.
2
ICC for power calculation is the typical ICC given.
Specifications subject to change without notice.
4.5 5.0 5.5 V
25 mA IBIAS = 0
–2–
REV. A
ADN2830

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C, unless otherwise noted.)
1
VCCto GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Digital Inputs (ALS, Mode) . . . . . . . . .–0.3 V to V
+ 0.3 V
CC
Operating Temperature Range
Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . –40°Cto+85°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating condi­tions for extended periods may affect device reliability.
2
θJA is defined when the part is soldered onto a 4-layer board.
Storage Temperature Range . . . . . . . . . . –65°Cto+150°C
Junction Temperature (T
Max ) . . . . . . . . . . . . . . . . . 150°C
J
θJA Thermal Impedance2 . . . . . . . . . . . . . . . . . . . . 32°C/W
32-Lead LFCSP Package,
Power Dissipation . . . . . . . . . . . . . . (T
Max – TA)/θJAmW
J
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . . 300°C

ORDERING GUIDE

Model Temperature Range Package Description
ADN2830ACP32 –40°C to +85°C 32-Lead LFCSP ADN2830ACP32-REEL7 –40°C to +85°C 32-Lead LFCSP ADN2830ACP32-REEL –40°C to +85°C 32-Lead LFCSP
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADN2830 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. A
–3–
ADN2830

PIN CONFIGURATION

3
CC
24 IBMON
23 IBMON
22 GND3
21 V
20 ALS
19 FAIL
18 DEGRADE
17 MODE
25
2
V
CC
NC 26 GND2 27 IBIAS 28 GND2 29 GND2 30 IBIAS 31
NC 32
NC = NO CONNECT
ADN2830
TOP VIEW
PIN 1 INDICATOR
NC 3
GND 1
ASET 2
IMPD 5
PSET 4

PIN FUNCTION DESCRIPTIONS

Pin No. Mnemonic Function
1GND Supply Ground 2 ASET Alarm Current Threshold Set Pin 3NCNo Connect 4 PSET Average Optical Power Set Pin 5 IMPD Monitor Photodiode Input 6IMPDMON Mirrored Current from Monitor Photodiode—Current Source 7 GND4 Supply Ground 8V
4 Supply Voltage
CC
9 PAVCAP Average Power Loop Capacitor 10 PAVCAP Average Power Loop Capacitor 11 V 12 V
1 Supply Voltage
CC
5 Supply Voltage
CC
13 NC No Connect 14 GND1 Supply Ground 15 NC No Connect 16 NC No Connect 17 MODE Mode Select: Tied to ALS = Standalone, High = Parallel Current Booster 18 DEGRADE DEGRADE Alarm Output 19 FAIL FAIL Alarm Output 20 ALS Automatic Laser Shutdown 21 V
3 Supply Voltage
CC
22 GND3 Supply Ground 23 IBMON Bias Current Monitor Output—Current Source 24 IBMON Bias Current Monitor Output—Current Source 25 V
2 Supply Voltage
CC
26 NC No Connect 27 GND2 Supply Ground 28 IBIAS Laser Diode Bias Current 29 GND2 Supply Ground 30 GND2 Supply Ground 31 IBIAS Laser Diode Bias Current 32 NC No Connect
8
4
CC
V
GND4 7
IMPDMON 6
16 NC 15 NC 14 GND1 13 NC 12 V
5
CC
11
V
1
CC
10 PAVCAP 9 PAVCAP
–4–
REV. A
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