ANALOG DEVICES ADN2821 Service Manual

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11.1 Gbps 3.3V

Preliminary Technical Data

FEATURES

Bandwidth: 8 GHz min
Input Noise Current Density: 12pA√Hz
Optical sensitivity: −19 dBm1
Differential Transimpedance /Linear Range:

ADN2821_2: 2.0 kΩ/0.20 mA p-p
ADN2821_5: 5.0 kΩ/0.08 mA p -p

ADN2821_10: 10.0 kΩ/0.04 mA p-p
Power Dissipation: 150 mW
Differential Output Swing: 400 mV p-p min
Input Overload: 3.25 dBm @ 10 dB ER
Low-F cutoff:

ADN2821_10: 25 kHz w/C
On-Chip PD filter: R
RSSI voltage and current ratio: 0.8V/mA
Die Size: 0.65 mm × 1.20 mm

= 200 Ω, CF = 20 pF

F

APPLICATIONS

10.7 Gbps Optical Modules
SONET/SDH OC-192/STM-64 and 10 GbE
Receivers, Transceivers, Transponders

= 0.5 nF

LF

Transimpedance Amplifier

ADN2821

PRODUCT DESCRIPTION

The ADN2821_2/5/10 are a series of compact, high
performance SiGe 3.3V power supply Trans-impedance
Amplifiers (TIAs) optimized for small form factor 10Gbps
Metro-Access and Ethernet PD-TIA modules. The ADN2821
series features low input referred noise current and a range of
trans-impedance gains, suitable for driving a typical CDR or
transceiver directly. 8GHz minimum BW enables up to

11.1Gbps operation; 1.1µA input referred noise current enables

−19dBm sensitivity; 3.25dBm input overload current at a 10dB
extinction ratio. RSSI output signal proportional to average
input current is available for monitoring and alarm generation.
For assembly in small form factor packages, the ADN2821
series integrates a photodiode filter R
features 25kHz low frequency cutoff with small 0.5nF external
capacitor The ADN2821 operates with a 3.3V ±0.3V power
supply and is available in die form.

1

-12

10

BER, 10 dB extinction ratio, 0.85 A/W PD responsivity.

network on chip and

FCF

FUNCTIONAL BLOCK DIAGRAM

3.3V
VCC_FILT ER

200Ω

FI L TER

IN

20pF

0.85V

GND

Figure 1. ADN2821 Block Diagram.

Rev. PrL

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Specifications subject to change without notice. No license is granted by implication
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500Ω

VCC

50Ω50Ω

OU T
OU TB

10mA

RSSI

GND

CL F

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © 2004 Analog Devices, Inc. All rights reserved.

ADN2821 Preliminary Technical Data

TABLE OF CONTENTS

Electrical Specifications ...................................................................3

Pad Coordinates ............................................................................6

Absolute Maximum Ratings............................................................ 4

ESD Caution.................................................................................. 4

Pad Descriptions............................................................................... 5

Pad Layout......................................................................................... 6

REVISION HISTORY

Revision PrL: Preliminary Version

11/04 Revision Pr-A: Add RSSI function Spec.

Die Information.............................................................................6

Assembly Recommendations...........................................................7

Ordering Guide..................................................................................8

Rev. PrL| Page 2 of 8

Preliminary Technical Data ADN2821

ELECTRICAL SPECIFICATIONS

Table 1.

Parameter Conditions1 Min Typ Max Units

DYNAMIC PERFORMANCE

Bandwidth (BW)2 −3 dB 8 9.5 GHz
Total Input RMS Noise (I
Small Signal Trans-impedance (TZ) ADN2821_2, 100 MHz 1500 2000 2500 V/A
ADN2821_5, 100 MHz 3500 5000 6500 V/A
ADN2821_10, 100 MHz 6000 10000 15000 V/A
Trans-impedance Ripple2 50 MHz to 5 GHz ±1 dB
Group Delay Variation2 50 MHz to 8 GHz ±10 ps
Low Frequency Cut-Off CLF = 1000 pF 15 kHz
Output Return Loss2 DC to 8 GHz, differential −12 −10 dB
Total pk-pk Jitter2 I
Input Overload Current
Maximum Output Swing p-p diff, I
Linear Output Range p-p, < 1 dB gain compression 400 mV
Power Supply Noise Rejection <10MHz TBD dB

DC PERFORMANCE

Power Dissipation I
Input Voltage 0.85 V
Output Impedance single-ended 50 Ω
PD FILTER Resistance RF 200 Ω
PD FILTER Capacitance CF 20 pF
RSSI Sensitivity I
RSSI Offset I

1

Min/Max Vcc = +3.3V ± 0.3V, Ta = −40°C to +95°C; Typ Vcc = 3.3V, T

2

Photodiode capacitance CD = 0.22pF ± 0.04pF, Photodiode resistance = 15Ω, CB = 100pF Bond inductance LIN = L

Load impedance = 50Ω (each output, AC coupled)

3

-12

10

BER, 10dB extinction ratio, 0.85 A/W PD responsivity

)2 DC to 10GHz 1.1 1.3 µA

RMS

= 2.0 mA, 4 dB ER 5 TBD ps

3, 2

Pav, 10

IN,PK- PK

-12

BER, 10 dB ER TBD 3.25 dBm

= 2.5mA 400 520 650 mV

IN,PK- PK

= 0.1 mA, Vcc = 3.3 V ± 5% 150 200 mW

IN,AVE

= 0 uA to 1 mA 0.8 V/mA

IN, AVE

= 0 uA TBD mV

IN, AVE

= +25C

ambient

= 0.3nH ± 0.1nH; L

FILTER

OUT

= L

OUTB

= 0.5nH ± 0.1nH

Rev. PrL | Page 3 of 8