Serial data input: 12.3 Mb/s to 1.25 Gb/s
Exceeds SONET requirements for jitter transfer/
generation/tolerance
Quantizer sensitivity: 6 mV typical
Adjustable slice level: ±100 mV
Patented clock recovery architecture
Loss of signal (LOS) detect range: 3 mV to 15 mV
Independent slice level adjust and LOS detector
No reference clock required
Loss of lock indicator
2
C™ interface to access optional features
I
Single-supply operation: 3.3 V
Low power: 350 mW typical
5 mm × 5 mm 32-lead LFCSP, Pb Free
APPLICATIONS
SONET OC-1/3/12 and all associated FEC rates
Fibre Channel, GbE, HDTV, etc.
WDM transponders
Regenerators/repeaters
Test equipment
Broadband cross-connects and routers
FUNCTIONAL BLOCK DIAGRAM
Data Recovery IC with Integrated Limiting Amp
ADN2813
PRODUCT DESCRIPTION
The ADN2813 provides the receiver functions of quantization,
signal level detect, and clock and data recovery for continuous
data rates from 12.3 Mb/s to 1.25 Gb/s. The ADN2813
automatically locks to all data rates without the need for an
external reference clock or programming. All SONET jitter
requirements are met, including jitter transfer, jitter generation,
and jitter tolerance. All specifications are quoted for −40°C to
+85°C ambient temperature, unless otherwise noted.
This device, together with a PIN diode and a TIA preamplifier,
can implement a highly integrated, low cost, low power fiber
optic receiver.
The receiver front end loss of signal (LOS) detector circuit
indicates when the input signal level has fallen below a useradjustable threshold. The LOS detect circuit has hysteresis to
prevent chatter at the output.
The ADN2813 is available in a compact 5 mm × 5 mm 32-lead
chip scale package.
REFCLKP/N
(OPTIONAL)
LOL
VCC VEECF1CF2
LICEP/N
PIN
NIN
VREF
Rev. PrA
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
PIN and NIN should be differentially driven and ac-coupled for optimum sensitivity.
2
When ac-coupled, the LOS assert and de-assert time is dominated by the RC time constant of the ac coupling capacitor and the 50 Ω input termination of the
Input Voltage Range @ PIN or NIN, dc-coupled 1.8 2.8 V
Peak-to-Peak Differential Input PIN – NIN 2.0 V
Input Common Mode Level
Differential Input Sensitivity 223 − 1 PRBS, ac-coupled,1 BER = 1 x 10
DC-coupled (see Figure 26, Figure 27,
and Figure 28)
2.3 2.5 2.8 V
–10
10 6 mV p-p
Input Overdrive (see Figure 11) 5 3 mV p-p
Input Offset 500 µV
Input RMS Noise BER = 1 x 10
–10
290 µV rms
Data Rate 12.3 1250 Mb/s
S11 @ 2.5 GHz −15 dB
Input Resistance Differential 100
Ω
Input Capacitance 0.65 pF
Gain SLICEP – SLICEN = ±0.5 V 0.08 0.1 0.12 V/V
Differential Control Voltage Input SLICEP – SLICEN –0.95 +0.95 V
Control Voltage Range DC level @ SLICEP or SLICEN VEE 0.95 V
Slice Threshold Offset 1 mV
Loss of Signal Detect Range (see Figure 5) R
= 0 Ω 12 15 17 mV
Thresh
= 100 kΩ 2.0 3.0 4.0 mV
Thresh
Hysteresis (Electrical) GbE
= 0 Ω 5.0 6 7.0 dB
Thresh
= 100 kΩ 3.0 6 8.0 dB
Thresh
= 0 Ω 5.6 6 7.2 dB
Thresh
= 10 kΩ 2.0 4 6.7 dB
Thresh
LOS Assert Time DC-coupled2 500 ns
LOS De-Assert Time DC-coupled2 400 ns
VCO Frequency Error for LOL Assert With respect to nominal 1000 ppm
VCO Frequency Error for LOL De-Assert With respect to nominal 250 ppm
LOL Response Time 12.3 Mb/s 4 ms
OC-12 1.0 µs
Lock to Data Mode 1GbE 1.5 ms
Optional Lock to REFCLK Mode 10.0 ms
Rev. PrA | Page 3 of 28
ADN2813 Preliminary Technical Data
Parameter Conditions Min Typ Max Unit
DATA RATE READBACK ACCURACY
Coarse Readback (See Table 13) 10 %
Fine Readback In addition to REFCLK accuracy Data rate < 20 Mb/s 200 ppm
Data rate > 20 Mb/s 100 ppm
POWER SUPPLY VOLTAGE 3.0 3.3 3.6 V
POWER SUPPLY CURRENT 106 mA
OPERATING TEMPERATURE RANGE –40 +85 °C
Single-Ended Output Swing VSE (see Figure 3) 250 400 mV
Differential Output Swing V
Output Offset Voltage 1125 1200 1275 mV
Output Impedance Differential 100
LVDS Ouputs Timing
Rise Time 20% to 80% TBD TBD ps
Fall Time 80% to 20% TBD TBD ps
Setup Time TS (see Figure 2), GbE 400 ps
Hold Time TH (see Figure 2), GbE 400 ps
I2C INTERFACE DC CHARACTERISTICS LVCMOS
Input High Voltage VIH 0.7 VCC V
Input Low Voltage VIL 0.3 VCC V
Input Current VIN = 0.1 VCC or VIN = 0.9 VCC −10.0 +10.0 µA
Output Low Voltage VOL, I
I2C INTERFACE TIMING (See Figure 10)
SCK Clock Frequency 400 kHz
SCK Pulse Width High t
SCK Pulse Width Low t
Start Condition Hold Time t
Start Condition Setup Time t
Data Setup Time t
Data Hold Time t
SCK/SDA Rise/Fall Time TR/TF 20 + 0.1 Cb
Stop Condition Setup Time t
Bus Free Time between a Stop and a Start t
REFCLK CHARACTERISTICS Optional lock to REFCLK mode
Input Voltage Range @ REFCLKP or REFCLKN
V
V
Minimum Differential Input Drive 100 mV p-p
Reference Frequency 12.3 200 MHz
Required Accuracy 100 ppm
LVTTL DC INPUT CHARACTERISTICS
Input High Voltage VIH 2.0 V
Input Low Voltage VIL 0.8 V
Input High Current IIH, VIN = 2.4 V 5 µA
Input Low Current IIL, VIN = 0.4 V −5 µA
LVTTL DC OUTPUT CHARACTERISTICS
Output High Voltage VOH, IOH = −2.0 mA 2.4 V
Output Low Voltage VOL, IOL = 2.0 mA 0.4 V
1
Cb = total capacitance of one bus line in pF. If mixed with Hs-mode devices, faster fall-times are allowed.
(see Figure 3) 500 800 mV
DIFF
Ω
= 3.0 mA 0.4 V
OL
600 ns
HIGH
1300 ns
LOW
600 ns
HD;STA
600 ns
SU;STA
100 ns
SU;DAT
300 ns
HD;DAT
600 ns
SU;STO
1300 ns
BUF
0 V
IL
VCC V
IH
1
300 ns
Rev. PrA | Page 5 of 28
ADN2813 Preliminary Technical Data
ABSOLUTE MAXIMUM RATINGS
TA = T
µF, SLICEP = SLICEN = VEE, unless otherwise noted.
Table 4.
Parameter Rating
Supply Voltage (VCC) 4.2 V
Minimum Input Voltage (All Inputs) VEE − 0.4 V
Maximum Input Voltage (All Inputs) VCC + 0.4 V
Maximum Junction Temperature 125°C
Storage Temperature −65°C to +150°C
Lead Temperature (Soldering 10 s) 300°C
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
MIN
to T
, VCC = V
MAX
MIN
to V
, VEE = 0 V, CF = 0.47
MAX
Stress above those listed under Absolute Maximum Ratings may
cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL CHARACTERISTICS
Thermal Resistance
32-LFCSP, 4-layer board with exposed paddle soldered to VEE
= 28°C/W.
θ
JA
Rev. PrA | Page 6 of 28
Preliminary Technical Data ADN2813
TIMING CHARACTERISTICS
CLKOUTP
T
T
S
H
DATAOUTP/N
04951-0-002
Figure 2. Output Timing
OUTP
OUTN
OUTP–OUTN
V
CML
V
0V
SE
V
DIFF
V
SE
04951-0-003
Figure 3. Single-Ended vs. Differential Output Specifications
Rev. PrA | Page 7 of 28
ADN2813 Preliminary Technical Data
*
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
32 TEST2
31 VCC
30 VEE
29 DATAOUTP
28 DATAOUTN
27 SQUELCH
26 CLKOUTP
25 CLKOUTN
TEST1 1
VCC 2
VREF 3
NIN 4
PIN 5
SLICEP 6
SLICEN 7
VEE 8
THERE IS AN EXPOSED PAD ON THE BOTTOM OF
THE PACKAGE THAT MUST BE CONNECTED TO GND.
PIN 1
INDICATOR
ADN2813*
TOP VIEW
(Not to Scale)
VCC 12
THRADJ 9
REFCLKP 10
REFCLKN 11
CF2 14
VEE 13
CF1 15
LOL 16
24 VCC
23 VEE
22 LOS
21 SDA
20 SCK
19 SADDR5
18 VCC
17 VEE
04951-0-004
Figure 4. Pin Configuration
Table 5. Pin Function Descriptions
Pin No. Mnemonic Type1 Description
1 TEST1 Connect to VCC.
2 VCC P Power for Limamp, LOS.
3 VREF AO Internal VREF Voltage. Decouple to GND with a 0.1 µF capacitor.
4 NIN AI Differential Data Input. CML.
5 PIN AI Differential Data Input. CML.
6 SLICEP AI Differential Slice Level Adjust Input.
7 SLICEN AI Differential Slice Level Adjust Input.
8 VEE P GND for Limamp, LOS.
9 THRADJ AI LOS Threshold Setting Resistor.
10 REFCLKP DI Differential REFCLK Input. 12.3 MHz to 200 MHz.
11 REFCLKN DI Differential REFCLK Input. 12.3 MHz to 200 MHz.
12 VCC P VCO Power.
13 VEE P VCO GND.
14 CF2 AO Frequency Loop Capacitor.
15 CF1 AO Frequency Loop Capacitor.
16 LOL DO Loss of Lock Indicator. LVTTL active high.
17 VEE P FLL Detector GND.
18 VCC P FLL Detector Power.
19 SADDR5 DI Slave Address Bit 5.
20 SCK DI I
21 SDA DI I
22 LOS DO Loss of Signal Detect Output. Active high. LVTTL.
23 VEE P Output Buffer, I
24 VCC P Output Buffer, I
25 CLKOUTN DO Differential Recovered Clock Output. LVDS.
26 CLKOUTP DO Differential Recovered Clock Output. LVDS.
27 SQUELCH DI Disable Clock and Data Outputs. Active high. LVTLL.
28 DATAOUTN DO Differential Recovered Data Output. LVDS.
29 DATAOUTP DO Differential Recovered Data Output. LVDS.
30 VEE P Phase Detector, Phase Shifter GND.
31 VCC P Phase Detector, Phase Shifter Power.
32 TEST2 Connect to VCC.
Exposed Pad Pad P Connect to GND
1
Type: P = power, AI = analog input, AO = analog output, DI = digital input, DO = digital output.
2
C Clock Input.
2
C Data Input.
2
C GND.
2
C Power.
Rev. PrA | Page 8 of 28
Preliminary Technical Data ADN2813
TYPICAL PERFORMANCE CHARACTERISTICS
16
14
12
10
8
TRIP POINT (mV p-p)
6
4
2
110100
1k10k100k
R
(Ω)
TH
04951-0-005
Figure 5. LOS Comparator Trip Point Programming
Rev. PrA | Page 9 of 28
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