Analog Devices ADM8830 b Datasheet

Charge Pump Regulator
TIMING
GENERATOR
LDO
VOLTA
GE
REGULATOR
VOLTA
GE
DOUBLER
CONTROL
LOGIC
DISCHARGE
SHUTDOWN
CONTROL
C1+
C1–
VOUT
LDO IN
+5
VOUT
+5
VIN
C2+
C2–
C3+
C3–
+15VOUT
C4+
C4–
–10VOUT
C1
2.2F
C6
2.2F
C2 1F
C7
2.2F
+5.1V
C3 1F
+15.3V
C8 1F
C4 1F
–10.2V C9 1F
VOLTA
GE
TRIPLER
DOUBLE
TRIPLE
VOLTAGE
INVERTE
R
OSCILLATOR
CLKIN
SCAN/BLANK
LDO_ON/OFF
SHDN
GND
V
CC
ADM8830
C5
2.2F
for Color TFT Panel
ADM8830
FEATURES 3 Output Voltages (+5.1 V, +15.3 V, –10.2 V) from
One 3 V Input Supply
Power Efciency Optimized for Use with TFT in
Mobile Phones Low Quiescent Current Low Shutdown Current (<1 A) Fast Transient Response Shutdown Function Power Saving during Blanking Period Option to Use External LDO
APPLICATIONS Handheld Instruments TFT LCD Panels Cellular Phones

GENERAL DESCRIPTION

The ADM8830 is a charge pump regulator used for color thin lm transistor (TFT) liquid crystal displays (LCDs). Using charge pump technology, the device can be used to generate three output voltages (+5.1 V ± 2%, +15.3 V, –10.2 V) from a single 3 V input supply. These outputs are then used to provide supplies for the LCD controller (5.1 V) and the gate drives for the transistors in the panel (+15.3 V and –10.2 V). Only a few external capacitors are needed for the charge pumps. An efcient low dropout voltage regulator also ensures that the power efciency is high and provides a low ripple 5.1 V output. This LDO can be shut down and an external LDO used to regulate the 5 V doubler output and drive the input to the charge pump section, which generates the +15.3 V and –10.2 V outputs if so required by the user.
The ADM8830 has an internal 100 kHz oscillator for use in scanning mode, but the part must be clocked by an external clock source in blanking (low current) mode. The internal oscillator is used to clock the charge pumps during scanning mode where the current is highest. During blanking periods, the ADM8830 switches to use an external, lower frequency clock. This allows the user to vary the frequency and maximize power efciency during blanking periods. The tolerances on the output voltages are
REV. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or oth­erwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

FUNCTIONAL BLOCK DIAGRAM

seamlessly maintained when switching from scanning mode to blanking mode or vice versa.
The ADM8830 has a number of power saving features, including low power shutdown and reduced quiescent current consumption during the blanking periods mentioned above. The 5.1 V output consumes the most power, so power efciency is also maximized on this output with an oscillator enabling scheme (Green Idle™). This effectively senses the load current that is owing and turns on the charge pump only when charge needs to be delivered to the 5 V pump doubler output.
The ADM8830 is fabricated using CMOS technology for minimal power consumption. The part is packaged in 20-lead LFCSP and TSSOP packages.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved.
(VCC = 2.6 V to 3.6 V, TA = –40C to +85C, unless otherwise noted, C1, C5, C6,
ADM8830–SPECIFICATIONS
Parameter Min Typ Max Unit Test Conditions
INPUT VOLTAGE, VCC 2.6 3.6 V
SUPPLY CURRENT, ICC 150 400 µA Unloaded, Scanning Period 70 140 µA Unloaded, Blanking Period 1 µA Shutdown Mode, TA = 25°C
+5.1 V OUTPUT Output Voltage 5.0 5.1 5.2 V IL = 10 µA to 8 mA Output Current 4 5 mA Scanning Period 5 8 mA Scanning Period, VCC > 2.7 V 50 200 µA Blanking Period Power Efciency 80 % VCC = 3 V, IL = 5 mA (Scanning) 70 % VCC = 3 V, IL = 200 µA (Blanking) Output Ripple 10 mV p-p 8 mA Load Transient Response 5 µs IL Stepped from 10 µA to 8 mA
+15.3 V OUTPUT Output Voltage 14.4 15.3 15.6 V IL = 1 µA to 100 µA Output Current 50 100 µA Scanning Period 1 10 µA Blanking Period Output Ripple 50 mV p-p IL = 100 µA
–10.2 V OUTPUT Output Voltage –10.4 –10.2 –9.6 V IL = –1 µA to –100 µA Output Current –100 –50 µA Scanning Period –10 –1 µA Blanking Period Output Ripple 50 mV p-p IL = –100 µA
POWER EFFICIENCY 90 % Relative to 5.1 V Output, IL = 100 µA (Scanning) (+15.3 V and –10.2 V Outputs) 80 % Relative to 5.1 V Output, IL =10 µA (Blanking)
CHARGE PUMP FREQUENCY 60 100 140 kHz Scanning Period
CONTROL PINS SHDN Input Voltage, V
0.7 VCC V SHDN High = Normal Mode Digital Input Current ±1 µA Digital Input Capacitance* 10 pF SCAN/BLANK Input Voltage 0.3 VCC V Low = BLANK Period
0.7 VCC V High = SCAN Period Digital Input Current ±1 µA Digital Input Capacitance* 10 pF LDO_ON/OFF Input Voltage 0.3 VCC V Low = External LDO
0.7 VCC V High = Internal LDO Digital Input Current ±1 µA Digital Input Capacitance* 10 pF CLKIN Minimum Frequency 0.9 1 kHz Duty Cycle = 50%, Rise/Fall Times = 20 ns Input Voltage VIL 0.3 VCC V VIH 0.7 VCC V Digital Input Current ±1 µA Digital Input Capacitance* 10 pF
*Guaranteed by design. Not 100% production tested.
Specications are subject to change without notice.
0.3 VCC V SHDN Low = Shutdown Mode
SHDN
C7 = 2.2 F, C2, C3, C4, C8, C9 = 1 F, CLKIN = 1 kHz in blanking mode.)
–2–
REV. B
(VCC = 2.6 V to 3.6 V, TA = –40C to +85C, unless otherwise noted, C1, C5, C6,

TIMING SPECIFICATIONS

C7 = 2.2 F, C2, C3, C4, C8, C9 = 1 F, CLKIN = 1 kHz in blanking mode.)
Parameter Min Typ Max Unit Test Conditions
POWER-UP SEQUENCE +5 V Rise Time, t +15 V Rise Time, t –10 V Fall Time, t
300 µs 10% to 90%, Figure 2
R5V
8 ms 10% to 90%, Figure 2
R15V
12 ms 90% to 10%, Figure 2
F10V
Delay between –10 V Fall and +15 V, t
3 ms Figure 2
DELAY
POWER-DOWN SEQUENCE +5 V Fall Time, t +15 V Fall Time, t –10 V Rise Time, t
Specications are subject to change without notice.
75 ms 90% to 10%, Figure 2
F5V
40 ms 90% to 10%, Figure 2
F15V
40 ms 10% to 90%, Figure 2
R10V
ADM8830

ABSOLUTE MAXIMUM RATINGS*

(TA = 25°C, unless otherwise noted.)
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +4.0 V
Input Voltage to Digital Inputs . . . . . . . . . . . . . –0.3 V to +4.0 V
Output Short Circuit Duration to GND . . . . . . . . . . . . . 10 sec
Output Voltage
+5.1 V Output . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
–10.2 V Output . . . . . . . . . . . . . . . . . . . . . . . .–12 V to +0.3 V
+15.3 V Output . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +17 V
Operating Temperature Range . . . . . . . . . . . . –40°C to +85°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.55 W
(Derate 33 mW/°C above 25°C)
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class I
*This is a stress rating only; functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specication is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.

ORDERING GUIDE

Model Temperature Range Package Description Package Option
ADM8830ACP –40ºC to +85ºC Lead Frame Chip Scale Package CP-20-1 ADM8830ACP-REEL7 –40ºC to +85ºC Lead Frame Chip Scale Package CP-20-1 ADM8830ARU –40ºC to +85ºC Thin Shrink Small Outline Package RU-20 ADM8830ARU-REEL –40ºC to +85ºC Thin Shrink Small Outline Package RU-20 ADM8830ARU-REEL7 –40ºC to +85ºC Thin Shrink Small Outline Package RU-20 EVAL-ADM8830EB Evaluation Board

THERMAL CHARACTERISTICS

20-Lead TSSOP Package:
= 72°C/W
A
J
20-Lead LFCSP Package:
= 31°C/W
A
J
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADM8830 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
REV. B
–3–
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