Analog Devices ADM485 e Datasheet

5 V Low Power
a
FEATURES Meets EIA RS-485 Standard 5 Mbps Data Rate Single 5 V Supply –7 V to +12 V Bus Common-Mode Range High Speed, Low Power BiCMOS Thermal Shutdown Protection Short-Circuit Protection Driver Propagation Delay: 10 ns Receiver Propagation Delay: 15 ns High Z Outputs with Power Off Superior Upgrade for LTC485
APPLICATIONS Low Power RS-485 Systems DTE-DCE Interface Packet Switching Local Area Networks Data Concentration Data Multiplexers Integrated Services Digital Network (ISDN)
EIA RS-485 Transceiver
ADM485

FUNCTIONAL BLOCK DIAGRAM

ADM485
RO
RE
DE
R
DI
D
V
CC
B
A
GND

GENERAL DESCRIPTION

The ADM485 is a differential line transceiver suitable for high speed bidirectional data communication on multipoint bus trans­mission lines. It is designed for balanced data transmission and complies with EIA Standards RS-485 and RS-422. The part contains a differential line driver and a differential line receiver. Both the driver and the receiver may be enabled independently. When disabled, the outputs are three-stated.
The ADM485 operates from a single 5 V power supply. Excessive power dissipation caused by bus contention or by output shorting is prevented by a thermal shutdown circuit. This feature forces the driver output into a high impedance state if during fault condi­tions a significant temperature increase is detected in the internal driver circuitry.
Up to 32 transceivers may be connected simultaneously on a bus, but only one driver should be enabled at any time. It is important, therefore, that the remaining disabled drivers do not load the bus. To ensure this, the ADM485 driver features high output imped­ance when disabled and when powered down.
This minimizes the loading effect when the transceiver is not being used. The high impedance driver output is maintained over the entire common-mode voltage range from –7 V to +12 V.
The receiver contains a fail-safe feature that results in a logic high output state if the inputs are unconnected (floating).
The ADM485 is fabricated on BiCMOS, an advanced mixed technology process combining low power CMOS with fast switching bipolar technology. All inputs and outputs contain protection against ESD; all driver outputs feature high source and sink current capability. An epitaxial layer is used to guard against latch-up.
The ADM485 features extremely fast switching speeds. Minimal driver propagation delays permit transmission at data rates up to 5 Mbps while low skew minimizes EMI interference.
The part is fully specified over the commercial and industrial temperature range and is available in PDIP, SOIC, and small footprint MSOP packages.
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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved.
ADM485–SPECIFICATIONS
(VCC = 5 V 5%. All specifications T
MIN
to T
, unless otherwise noted.)
MAX
Parameter Min Typ Max Unit Test Conditions/Comments
DRIVER
Differential Output Voltage, V
OD
2.0 5.0 V V
5.0 V R = , Test Circuit 1 = 5 V, R = 50 (RS-422), Test Circuit 1
CC
1.5 5.0 V R = 27 Ω (RS-485), Test Circuit 1
V
OD3
| for Complementary Output States 0.2 V R = 27 or 50 , Test Circuit 1
|V
OD
Common-Mode Output Voltage, V
| for Complementary Output States 0.2 V R = 27 or 50
|V
OD
Output Short-Circuit Current (V Output Short-Circuit Current (V CMOS Input Logic Threshold Low, V CMOS Input Logic Threshold High, V
OC
= High) 35 250 mA –7 V ≤ VO ≤ +12 V
OUT
= Low) 35 250 mA –7 V ≤ VO ≤ +12 V
OUT
INL
INH
1.5 5.0 V V
3VR = 27 or 50 , Test Circuit 1
0.8 V
2.0 V
= –7 V to +12 V, Test Circuit 2
TST
Logic Input Current (DE, DI) ± 1.0 µA
RECEIVER
Differential Input Threshold Voltage, V Input Voltage Hysteresis, ∆V
TH
TH
Input Resistance 12 k –7 V Input Current (A, B) 1 mA V
CMOS Input Logic Threshold Low, V CMOS Input Logic Threshold High, V
INL
INH
–0.2 +0.2 V –7 V ≤ VCM ≤ +12 V
70 mV VCM = 0 V
VCM ≤ +12 V
= 12 V
IN
–0.8 mA V
= –7 V
IN
0.8 V
2.0 V
Logic Enable Input Current (RE) ± 1 µA CMOS Output Voltage Low, V CMOS Output Voltage High, V
OL
OH
4.0 V I
0.4 V I
Short-Circuit Output Current 7 85 mA V Three-State Output Leakage Current ± 1.0 µA 0.4 V ≤ V
= +4.0 mA
OUT
= –4.0 mA
OUT
= GND or V
OUT
OUT
CC
≤ 2.4 V
POWER SUPPLY CURRENT
ICC (Outputs Enabled) 1.0 2.2 mA Digital Inputs = GND or V ICC (Outputs Disabled) 0.6 1 mA Digital Inputs = GND or V
Specifications subject to change without notice.
CC
CC

TIMING SPECIFICATIONS

(VCC = 5 V 5%. All specifications T
MIN
to T
, unless otherwise noted.)
MAX
Parameter Min Typ Max Unit Test Conditions/Comments
DRIVER
Propagation Delay Input to Output t Driver O/P to O/P, t Driver Rise/Fall Time, t
SKEW
, t
R
F
Driver Enable to Output Valid 10 25 ns R Driver Disable Timing 10 25 ns R Matched Enable Switching 0 2 ns R
|t
– t
AZH
BZL
|, |t
BZH
– t
AZL
|
Matched Disable Switching 0 2 ns R
|t
– t
AHZ
BLZ
|, |t
BHZ
– t
ALZ
|
PLH
, t
PHL
21015nsR
15nsR 815nsR
= 54 , CL1 = CL2 = 100 pF, Test Circuit 3
LDIFF
= 54 , CL1 = CL2 = 100 pF, Test Circuit 3
LDIFF
= 54 , CL1 = CL2 = 100 pF, Test Circuit 3
LDIFF
= 110 , CL = 50 pF, Test Circuit 4
L
= 110 , CL = 50 pF, Test Circuit 4
L
= 110 , CL = 50 pF, Test Circuit 4*
L
= 110 , CL = 50 pF, Test Circuit 4*
L
RECEIVER
Propagation Delay Input to Output, t
– t
Skew |t
PLH
Receiver Enable, t Receiver Disable, t
|5nsC
PHL
EN1
EN2
PLH
, t
PHL
81530nsC
520nsC 520nsC
= 15 pF, Test Circuit 5
L
= 15 pF, Test Circuit 5
L
= 15 pF, RL = 1 k, Test Circuit 6
L
= 15 pF, RL = 1 k, Test Circuit 6
L
Tx Pulse Width Distortion 1 ns Rx Pulse Width Distortion 1 ns
*Guaranteed by characterization.
Specifications subject to change without notice.
–2–
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ADM485

ABSOLUTE MAXIMUM RATINGS*

(TA = 25°C, unless otherwise noted.)
VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Inputs
Driver Input (DI) . . . . . . . . . . . . . . . . –0.3 V to V
Control Inputs (DE, RE). . . . . . . . . . –0.3 V to V
+ 0.3 V
CC
+ 0.3 V
CC
Receiver Inputs (A, B) . . . . . . . . . . . . . . . . . . –9 V to +14 V
Outputs
Driver Outputs (A, B) . . . . . . . . . . . . . . . . . . –9 V to +14 V
Receiver Output . . . . . . . . . . . . . . . . . –0.5 V to V
+ 0.5 V
CC
Power Dissipation 8-Lead MSOP . . . . . . . . . . . . . . . . 900 mW
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 206°C/W
θ
JA
Power Dissipation 8-Lead PDIP . . . . . . . . . . . . . . . . . 500 mW
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 130°C/W
θ
JA
Power Dissipation 8-Lead SOIC . . . . . . . . . . . . . . . . . 450 mW
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 170°C/W
θ
JA
Operating Temperature Range
Commercial (J Version) . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Industrial (A Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . 300°C
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods of time may affect device reliability.
Table I. Transmitting
Inputs Outputs
DE DI B A
1101 1010 0XZZ
Table II. Receiving
Inputs Output
RE A–B RO
0
+0.2 V 1
0
–0.2 V 0 0Inputs Open 1 1X Z

ORDERING GUIDE

Model Temperature Range Package Option Branding
ADM485AN –40°C to +85°C N-8 ADM485AR –40°C to +85°CR-8 ADM485AR-REEL –40°C to +85°CR-8 ADM485ARZ* –40°C to +85°CR-8 ADM485ARZ-REEL* –40°C to +85°CR-8 ADM485ARM –40°C to +85°CRM-8 M41 ADM485ARM-REEL –40°C to +85°CRM-8 M41 ADM485ARM-REEL7 –40°C to +85°CRM-8 M41 ADM485JN 0°C to 70°C N-8 ADM485JR 0°C to 70°CR-8 ADM485JR-REEL 0°C to 70°CR-8 ADM485JR-REEL7 0°C to 70°CR-8 ADM485JRZ* 0°C to 70°CR-8 ADM485JRZ-REEL* 0°C to 70°CR-8 ADM485JRZ-REEL7* 0°C to 70°CR-8
*Z = Lead Free.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADM485 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
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–3–
ADM485

PIN CONFIGURATION

RO
RE
DE
1
2
ADM485
TOP VIEW
3
(Not to Scale)
4
8
V
CC
7
B
6
A
5
GNDDI

PIN FUNCTION DESCRIPTIONS

Pin No. Mnemonic Function
1ROReceiver Output. When enabled, if A > B by 200 mV, then RO = High. If A < B by 200 mV, then
RO = Low.
2 RE Receiver Output Enable. A low level enables the receiver output, RO. A high level places it in a high
impedance state.
3DEDriver Output Enable. A high level enables the driver differential outputs, A and B. A low level places it in a
high impedance state.
4DIDriver Input. When the driver is enabled, a Logic Low on DI forces A low and B high while a Logic High
on DI forces A high and B low. 5 GND Ground Connection, 0 V. 6A Noninverting Receiver Input A/Driver Output A. 7B
Inverting Receiver Input B/Driver Output B. 8VCCPower Supply, 5 V ± 5%.
–4–
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