15 kV ESD Protected, 2.7 V to 3.6 V
a
Serial Port Transceivers with Green Idle
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
FEATURES
Green Idle Power-Saving Mode
Single 2.7 V to 3.6 V Power Supply
Operates with 3 V Logic
0.1 F to 1 F Charge Pump Capacitors
Low EMI
Low Power Shutdown: 20 nA
Full RS-232 Compliance
460 kbits/s Data Rate
1 Receiver Active in Shutdown (2 for ADM3310E)
ESD >15 kV IEC 1000-4-2 on RS-232 I/Os (ADM33xxE)
ESD >15 kV IEC 1000-4-2 on CMOS and RS-232 I/Os
(ADM3307E)
APPLICATIONS
Mobile Phone Handsets/Data Cables
Laptop and Notebook Computers
Printers
Peripherals
Modems
PDAs/Hand-Held Devices/Palmtop Computers
GENERAL DESCRIPTION
The ADM33xxE line of driver/receiver products is designed to
fully meet the EIA-232 standard while operating with a single
2.7 V to 3.6 V power supply. The devices feature an on-board
charge pump dc-to-dc converter, eliminating the need for dual
power supplies. This dc-to-dc converter contains a voltage
tripler and a voltage inverter that internally generates positive
and negative supplies from the input 3 V power supply. The dcto-dc converter operates in Green Idle mode, whereby the charge
pump oscillator is gated ON and OFF to maintain the output
voltage at ±7.25 V under varying load conditions. This minimizes
the power consumption and makes these products ideal for
battery-powered portable devices.
The ADM33xxE devices are suitable for operation in harsh electrical environments and contain ESD protection up to ±15 kV
on their RS-232 lines (ADM3310E, ADM3311E, ADM3312E,
and ADM3315E). The ADM3307E contains ESD protection
up to ± 15 kV on all I/O lines (CMOS, RS-232, EN, and SD).
A shutdown facility that reduces the power consumption to
66 nW is also provided. While in shutdown, one receiver remains
active (two receivers active with ADM3310E), thereby allowing
monitoring of peripheral devices. This feature allows the device
to be shut down until a peripheral device begins communication.
*Protected by U.S.Patent No. 5,606,491.
™
*
The active receiver can alert the processor, which can then take
the ADM33xxE device out of the shutdown mode.
The ADM3307E contains five drivers and three receivers and is
intended for mobile phone data lump cables and portable computing applications.
The ADM3311E contains three drivers and five receivers and is
intended for serial port applications on notebook/laptop computers.
The ADM3310E is a low current version of the ADM3311E. This
device also allows two receivers to be active in shutdown mode.
The ADM3312E contains three drivers and three receivers and is
intended for serial port applications, PDAs, mobile phone data
lump cables, and other hand-held devices.
The ADM3315E is a low current version of the ADM3312E,
with a 22 kW receiver input resistance that reduces the drive
requirements of the DTE. Its main applications are PDAs,
palmtop computers, and mobile phone data lump cables.
The ADM33xxE devices are fabricated using CMOS technology
for minimal power consumption. All parts feature a high level
of overvoltage protection and latch-up immunity.
All ADM33xxE devices are available in a 32-lead 5 mm ¥ 5 mm
LFCSP package and in a TSSOP package (ADM3307E,
ADM3310E, and ADM3311E in a 28-lead TSSOP; ADM3312E
and ADM3315E in a 24-lead TSSOP). The ADM3311E also
comes in a 28-lead SSOP package.
The ADM33xxE devices are ruggedized RS-232 line drivers/
receivers that operate from a single supply of 2.7 V to 3.6 V.
Step-up voltage converters coupled with level shifting transmitters
and receivers allow RS-232 levels to be developed while operating
from a single supply. Features include low power consumption,
Green Idle operation, high transmission rates, and compatibility
with the EU directive on electromagnetic compatibility. This EM
compatibility directive includes protection against radiated and
conducted interference, including high levels of electrostatic
discharge.
All RS-232 (and CMOS, SD, and EN for ADM3307E) inputs and
outputs are protected against electrostatic discharges (up to ± 15 kV).
This ensures compliance with IEC 1000-4-2 requirements.
These devices are ideally suited for operation in electrically harsh
environments or where RS-232 cables are frequently being
plugged/unplugged. They are also immune to high RF field
strengths without special shielding precautions.
Emissions are also controlled to within very strict limits. CMOS
technology is used to keep the power dissipation to an absolute
minimum, allowing maximum battery life in portable applications.
REV. G
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © 2004 Analog Devices, Inc. All rights reserved.
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
FUNCTIONAL BLOCK DIAGRAMS
V
CC
10F
TANTALUM
ENABLE
INPUT
C1
C2
0.1F
0.1F
0.1F
CERAMIC
SHUTDOWN
OUTPUTS
INPUT
CMOS
CMOS
INPUTS
0.1F
1
C4
V
V
CC
C2
VOLTAGE
TRIPLER/
INVERTER
3V TO
C1
EN
SD
T1
IN
T2
IN
T3
IN
T4
IN
T5
IN
R1
OUT
R2
OUT
R3
OUT
9V
T1
T2
T3
T4
T5
C2+
C3+
C1+
C3–
V–
GND
R1
R2
R3
ADM3307E
NOTES
1
INTERNAL 400k PULL-UP RESISTOR ON EACH CMOS INPUT.
2
INTERNAL 5k PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
C1
C4
0.1F
V
C3
0.1F
C5
0.1F
T1
OUT
T2
OUT
EIA/TIA-232
T3
OUT
OUTPUTS
T4
OUT
T5
OUT
R1
OUT
EIA/TIA-232
R2
OUT
R3
OUT
INPUTS
2
10F
TANTALUM
CC
0.1F
CERAMIC
ENABLE
INPUT
CMOS
INPUTS
CMOS
OUTPUTS
C2
0.1F
T1
IN
T2
IN
1
T3
IN
R1
OUT
R2
OUT
R3
OUT
R4
OUT
R5
OUT
0.1F
V
C2+
VOLTAGE
V
CC
TRIPLER/
INVERTER
C2
3V TO
9V
EN
C1+
T1
T2
T3
ADM3310E/
C3+
GND
C3–
V–
C3
0.1F
C5
0.1F
C1–
T1
OUT
T2
OUT
T3
OUT
R1
IN
R2
IN
R3
IN
R4
IN
R5
IN
SHUTDOWN
INPUT
EIA/TIA-232
OUTPUTS
EIA/TIA-232
INPUTS
2
SD
R1
R2
R3
R4
R5
ADM3311E
NOTES
1
INTERNAL 400k PULL-UP RESISTOR ON EACH CMOS INPUT.
2
INTERNAL 5k PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
V
10F
TANTALUM
C1
V
C2+
V
CC
C2
EN
C1+
0.1F
VOLTAGE
TRIPLER/
INVERTER
3V TO
9V
T1
T2
T3
R1
R2
R3
C3+
GND
C3–
C1–
SD
C3
0.1F
C5
T1
OUT
T2
OUT
T3
OUT
R1
R2
R3
0.1F
SHUTDOWN
INPUT
IN
IN
IN
EIA/TIA-232
OUTPUTS
EIA/TIA-232
INPUTS
2
V–
C4
0.1F
CC
0.1F
CERAMIC
ENABLE
INPUT
CMOS
INPUTS
CMOS
OUTPUTS
C2
0.1F
T1
IN
T2
IN
1
T3
IN
R1
OUT
R2
OUT
R3
OUT
ADM3312E/
ADM3315E
NOTES
1
INTERNAL 400k PULL-UP RESISTOR ON EACH CMOS INPUT.
2
INTERNAL 5k (22k FOR ADM3315E) PULL-DOWN RESISTOR
ON EACH RS-232 INPUT.
–2–
REV. G
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
SPECIFICATIONS
(VCC = 2.7 V to 3.6 V, C1–C5 = 0.1 F. All specifications T
MIN
to T
, unless otherwise noted.)
MAX
Parameter Min Typ Max Unit Test Conditions/Comments
Operating Voltage Range 2.7 3.3 3.6 V
Power Supply Current
V
CC
ADM3307E 0.75 1.5 mA V
0.75 4.5 mA V
ADM3311E, ADM3312E 0.45 1 mA No Load; V
= 3.0 V to 3.6 V; No Load
CC
= 2.7 V to 3.6 V; No Load
CC
= 3.0 V to 3.6 V; TA = 0∞C
CC
to 85∞C
0.45 4.5 mA No Load; V
= 2.7 V to 3.6 V; TA = – 40∞C
CC
to +85∞C
ADM3310E, ADM3315E 0.35 0.85 mA V
ADM3310E, ADM3311E, 35 mA R
= 2.7 V to 3.6 V; No Load
CC
= 3 kW to GND on all T
L
OUTS
ADM3312E, ADM3315E
Shutdown Supply Current 0.02 1 mA
Input Pull-Up Current 10 25 mAT
= GND
IN
Input Leakage Current, SD, EN 0.02 ± 1 mA
Input Logic Threshold Low, V
Input Logic Threshold High, V
CMOS Output Voltage Low, V
CMOS Output Voltage High, V
INL
INH
OL
OH
2.0 V TIN, EN, SHDN
V
– 0.6 V I
CC
0.8 V TIN, EN, SHDN
0.4 V T
0.4 V I
, EN, SHDN; VCC = 2.7 V
IN
= 1.6 mA
OUT
= –200 mA
OUT
CMOS Output Leakage Current
ADM3307E 0.04 ± 1 mA EN = V
, 0 V < R
CC
ADM3310E, ADM3311E 0.05 ±5 mA EN = VCC, 0 V < R
OUT
OUT
< V
< V
CC
CC
ADM3312E, ADM3315E
Charge Pump Output Voltage, V+ +7.25 V No Load
ADM3307E, ADM3311E, ADM3312E
Charge Pump Output Voltage, V––7.25 V No Load
ADM3307E, ADM3311E, ADM3312E
Charge Pump Output Voltage, V+ +6.5 V No Load
ADM3310E, ADM3315E
Charge Pump Output Voltage, V––6.5 V No Load
ADM3310E, ADM3315E
EIA-232 Input Voltage Range –25 +25 V
EIA-232 Input Threshold Low 0.4 1.3 V
EIA-232 Input Threshold High 2.0 2.4 V
EIA-232 Input Hysteresis 0.14 V
EIA-232 Input Resistance
ADM3307E, ADM3310E, ADM3311E, 3 5 7 kW
ADM3312E
ADM3315E 14 22 31 kW
REV. G
–3–
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
SPECIFICATIONS
(continued)
Parameter Min Typ Max Unit Test Conditions/Comments
Output Voltage Swing
ADM3310E, ADM3315E ± 5.0 ± 5.5 V All Transmitter Outputs Loaded with
3kW to Ground
ADM3307E, ADM3311E, ADM3312 ± 5.0 ± 6.4 V (V
± 5.5 V (V
= 3.0 V)
CC
= 2.7 V)
CC
All Transmitter Outputs Loaded with
3kW to Ground
Transmitter Output Resistance 300 W V
RS-232
Output Short Circuit Current ± 15 ± 60 mA
= 0 V, V
CC
OUT
= ± 2 V
Maximum Data Rate
ADM3307E 250 720 kbps R
460 920 kbps R
ADM3310E, ADM3311E, ADM3312E 250 460 kbps R
ADM3315E V
Receiver Propagation Delay, T
PHL
, T
PLH
0.3 msC
0.17 1 msC
Receiver Output Enable Time, t
Receiver Output Disable Time, t
ER
DR
Transmitter Propagation Delay, T
PHL
, T
PLH
100 ns
300 ns
500 ns RL = 3 kW, CL = 1000 pF
= 3 kW to 7 kW, CL = 50 pF to 1000 pF,
L
V
= 2.7 V
CC
= 3 kW to 7 kW, CL = 50 pF to 1000 pF,
L
= 3.0 V
V
CC
= 3 kW to 7 kW, CL = 50 pF to 1000 pF,
L
= 3.0 V
CC
= 150 pF
L
= 150 pF; ADM3307E Only
L
Transition Region Slew Rate 3 18 V/msRL = 3 kW, CL = 50 pF to 1000 pF
ESD PROTECTION (I/O PINS) ±15 kV Human Body Model
NOTES
1
Measured at +3 V to –3 V or –3 V to +3 V.
2
Includes CMOS I/O, SD, and EN for ADM3307E.
Specification subject to change without notice.
± 15 kV IEC 1000-4-2 Air Discharge
± 8kVIEC 1000-4-2 Contact Discharge
2
1
ABSOLUTE MAXIMUM RATINGS*
(TA = 25∞C, unless otherwise noted)
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +4 V
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V
– 0.3 V) to +9 V
CC
V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+0.3 V to –9 V
Input Voltages
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
T
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 30 V
R
IN
Output Voltages
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 15 V
T
OUT
. . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (VCC + 0.3 V)
R
OUT
Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous
T
OUT
Thermal Impedance, q
JA
CP-32 LFCSP . . . . . . . . . . . . . . . . . . . . . . . . . . . 32.5∞C/W
RU-28 TSSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . 68.0∞C/W
RU-24 TSSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . 68.0∞C/W
RS-28 SSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76.0∞C/W
Operating Temperature Range
Industrial (A Version) . . . . . . . . . . . . . . . . . . –40∞C to +85∞C
Storage Temperature Range . . . . . . . . . . –65∞C to +150∞C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . 300∞C
ESD Rating (IEC 1000-4-2 Air) (RS-232 I/Os) . . . . . . .± 15 kV
ESD Rating (IEC 1000-4-2 Contact) (RS-232 I/Os) . . . . ± 8 kV
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operation
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
–4–
REV. G
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
PRODUCT SELECTION GUIDE
No. Rx I
Supply Active 15 kV I
CC
CC
Shutdown
Generic Voltage Tx Rx in SD Speed ESD Max Max* Additional Features
ADM3307E 2.7 V to 3.6 V 5 3 1 1 Mbps RS-232 1.5 mA 1 mA ± 15 kV ESD Protection
CMOS CMOS on RS-232 and
EN and SD CMOS I/Os including
SD and EN Pins.
ADM3310E 2.7 V to 3.6 V 3 5 2 460 kbps RS-232 0.85 mA 1 mA2 Rxs Active in Shutdown.
Green Idle Mode
Level 6 V. Low power
ADM3311E.
ADM3311E 2.7 V to 3.6 V 3 5 1 460 kbps RS-232 1 mA 1 mA
ADM3312E 2.7 V to 3.6 V 3 3 1 460 kbps RS-232 1 mA 1 mA
ADM3315E 2.7 V to 3.6 V 3 3 1 460 kbps RS-232 0.85 mA 1 mA 22 kW Rx I/P
Resistance. Green Idle
Mode Level 6 V. Low power
ADM3312E.
*ICC Shutdown is 20 nA typically.
ORDERING GUIDE
Model Temperature Range Package Description Package Option
ADM3307EARU –40∞C to +85∞C28-Lead Thin Shrink Small Outline (TSSOP) RU-28
ADM3307EARU-REEL –40∞C to +85∞CTape and Reel RU-28
ADM3307EARU-REEL7 –40∞C to +85∞CTape and Reel RU-28
ADM3307EACP –40∞C to +85∞C32-Lead
ADM3307EACP-REEL –40∞C to +85∞CTape and Reel RU-28
ADM3307EACP-REEL7 –40∞C to +85∞CTape and Reel RU-28
ADM3310EARU –40∞C to +85∞C28-Lead Thin Shrink Small Outline (TSSOP) RU-28
ADM3310EARU-REEL –40∞C to +85∞CTape and Reel RU-28
ADM3310EARU-REEL7 –40∞C to +85∞CTape and Reel RU-28
ADM3310EACP –40∞C to +85∞C32-Lead
ADM3310EACP-REEL –40∞C to +85∞CTape and Reel CP-32-2
ADM3310EACP-REEL7 –40∞C to +85∞CTape and Reel CP-32-2
ADM3311EARS –40∞C to +85∞C28-Lead Shrink Small Outline (SSOP) RS-28
ADM3311EARS-REEL –40∞C to +85∞CTape and Reel RS-28
ADM3311EARS-REEL7 –40∞C to +85∞CTape and Reel RS-28
ADM3311EARZ* –40∞C to +85∞C28-Lead Shrink Small Outline (SSOP) RS-28
ADM3311EARZ-REEL* –40∞C to +85∞CTape and Reel RS-28
ADM3311EARZ-REEL7* –40∞C to +85∞CTape and Reel RS-28
ADM3311EARU –40∞C to +85∞C28-Lead Thin Shrink Small Outline (TSSOP) RU-28
ADM3311EARU-REEL –40∞C to +85∞CTape and Reel RU-28
ADM3311EARU-REEL7 –40∞C to +85∞CTape and Reel RU-28
ADM3311EACP –40∞C to +85∞C32-Lead
ADM3312EARU –40∞C to +85∞C24-Lead Thin Shrink Small Outline (TSSOP) RU-24
ADM3312EARU-REEL –40∞C to +85∞CTape and Reel RU-24
ADM3312EARU-REEL7 –40∞C to +85∞CTape and Reel RU-24
ADM3312EACP –40∞C to +85∞C32-Lead
ADM3312EACP-REEL –40∞C to +85∞CTape and Reel CP-32-2
ADM3312EACP-REEL7 –40∞C to +85∞CTape and Reel CP-32-2
ADM3315EARU –40∞C to +85∞C24-Lead Thin Shrink Small Outline (TSSOP) RU-24
ADM3315EARU-REEL –40∞C to +85∞CTape and Reel RU-24
ADM3315EARU-REEL7 –40∞C to +85∞CTape and Reel RU-24
ADM3315EARUZ* –40∞C to +85∞C24-Lead Thin Shrink Small Outline (TSSOP) RU-24
ADM3315EARUZ-REEL* –40∞C to +85∞CTape and Reel RU-24
ADM3315EARUZ-REEL7* –40∞C to +85∞CTape and Reel RU-24
ADM3315EACP –40∞C to +85∞C32-Lead
ADM3315EACP-REEL –40∞C to +85∞CTape and Reel CP-32-2
ADM3315EACP-REEL7 –40∞C to +85∞CTape and Reel CP-32-2
Z = Pb-free part.
*
5 mm ¥ 5 mm
5 mm ¥ 5 mm
5 mm ¥ 5 mm
5 mm ¥ 5 mm
5 mm ¥ 5 mm
Lead Frame
Lead Frame
Lead Frame
Lead Frame
Lead Frame
Chip Scale
Chip Scale
Chip Scale
Chip Scale
Chip Scale
Package (LFCSP) CP-32-2
Package (LFCSP) CP-32-2
Package (LFCSP) CP-32-2
Package (LFCSP) CP-32-2
Package (LFCSP) CP-32-2
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
ADM33xxE feature proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
REV. G
–5–
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
PIN CONFIGURATIONS
128
V
V
2
CC
CC
V
C2–
C1–
30
31
32
PIN 1
1
EN
IDENTIFIER
2
SD
3
NC
T1
4
IN
T2
IN
T3
IN
T4
IN
T5
IN
5
6
7
8
ADM3307E
TOP VIEW
(Not to Scale
9
10111213141516
NC
OUTR1OUT
R2
V+
29
OUT
R3
C2+
28
NC
C3+
27
)
INR2IN
R3
C1+
26
C3–
25
IN
R1
V–
24
GND
23
GND
22
21
T1
OUT
T2
20
OUT
T3
19
OUT
18
T4
OUT
T5
17
OUT
ADM3307E
CC
V
C2–
31
32
PIN 1
1
EN
IDENTIFIER
C1+
2
NC
3
4
5
6
7
8
ADM3310E/
ADM3311E
(Not to Scale
9
10
OUT
OUT
R4
R3
T1
IN
T2
IN
T3
IN
R1
OUT
R2
OUT
C3+
C2+
V+
28
29
30
TOP VIEW
11
12
131415
NC
NC
OUT
R5
GND
27
)
INR4IN
R5
C3–
26
V–
25
24
C1–
23
SD
22
NC
21
T1
OUT
T2
20
OUT
19
T3
OUT
18
R1
IN
17
R2
IN
16
IN
R3
3
C2
C1
4
5
EN
ADM3307E
623
SD
T1
7
IN
T2
8
IN
T3
9
IN
T4
10
IN
T5
11
IN
R1
12
OUT
R2
13
OUT
R3
14
OUT
128
V
2
C2
V
3
CC
C2
4
5
EN
C1
623
T1
7
IN
T2
8
IN
T3
9
IN
10
R1
OUT
R2
11
OUT
R3
12
OUT
R4
13
OUT
R5
14
OUT
TOP VIEW
(Not to Scale)
ADM3310E/
ADM3311E
TOP VIEW
(Not to Scale)
C2
C3
27
26
C1
C3
25
24
V
GND
T1
22
OUT
T2
21
OUT
T3
20
OUT
T4
19
OUT
T5
18
OUT
R1
17
IN
R2
16
IN
R3
15
IN
C3
GND
27
26
C3
25
V
C1
24
SD
T1
22
OUT
T2
21
OUT
T3
20
OUT
19
R1
IN
R2
18
IN
R3
17
IN
16
R4
IN
15
R5
IN
C1+
T1
T2
T3
EN
NC
NC
ADM3310E/ADM3311E
1
V
C2
CC
V
C3+
C2+
C2–
31
32
PIN 1
1
IDENTIFIER
2
3
ADM3312E/
4
IN
IN
IN
5
6
7
8
ADM3315E
(Not to Scale
9
10
OUT
OUT
R2
R1
V+
28
29
30
TOP VIEW
11
13
12
NC
NC
OUT
R3
GND
27
)
14
INR2IN
R3
C3–
26
15
V–
25
24
C1–
23
SD
22
NCNC
21
T1
OUT
T2
20
OUT
19
T3
OUT
18
NC
17
NC
16
IN
R1
2
V
3
CC
C2
4
5
EN
ADM3312E/
ADM3315E
6
C1
T1
7
IN
T2
8
IN
T3
IN
R1
OUT
R2
OUT
R3
OUT
9
10
11
12
TOP VIEW
(Not to Scale)
24
C3
23
GND
22
C3
21
V
20
C1
19
SD
T1
18
OUT
T2
17
OUT
T3
16
OUT
R1
15
IN
R2
14
IN
R3
13
IN
ADM3312E/ADM3315E
–6–
REV. G
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
PIN FUNCTION DESCRIPTIONS
Mnemonic Function
V
CC
V+ Internally Generated Positive Supply, 7.25 V (6.5 V nominal for ADM3310E, ADM3315E). Capacitor C4 is
V– Internally Generated Positive Supply, –7.25 V (–6.5 V nominal for ADM3310E, ADM3315E). Capacitor C5 is
GND Ground Pin. Must be connected to 0 V.
C1+, C1– External Capacitor 1 is connected between these pins. A 0.1 mF capacitor is recommended, but larger capacitors
C2+, C2– External Capacitor 2 is connected between these pins. A 0.1 mF capacitor is recommended, but larger capacitors
C3+, C3– External Capacitor 3 is connected between these pins. A 0.1 mF capacitor is recommended, but larger capacitors
T
IN
T
OUT
R
IN
R
OUT
EN Receiver Enable. A high level three-states all the receiver outputs.
SD Shutdown Control. A high level disables the charge pump and reduces the quiescent current to less than 1 mA.
Power Supply Input 2.7 V to 3.6 V.
connected between V
and V+.
CC
connected between GND and V–.
up to 1 mF may be used.
up to 1 mF may be used.
up to 1 mF may be used.
Transmitter (Driver) Inputs. These inputs accept TTL/CMOS levels. An internal 400 kW pull-up resistor to
is connected on each input.
V
CC
Transmitter (Driver) Outputs. Typically ±5.5 V (±6.4 V for ADM3311E and ADM3312E)
Receiver Inputs. These inputs accept RS-232 signal levels. An internal 5 kW pull-down resistor (22 kW for ADM3315E)
to GND is connected on each of these inputs.
Receiver Outputs. These are TTL/CMOS levels.
All transmitters and most receivers are disabled. One receiver remains active in shutdown (two receivers active
in shutdown for the ADM3310E).
• ADM3307E R
• ADM3310E R
• ADM3311E R
• ADM3312E R
• ADM3315E R
3 active in shutdown
OUT
4 and R
OUT
5 active in shutdown
OUT
3 active in shutdown
OUT
3 active in shutdown
OUT
5 active in shutdown
OUT
Table I. ADM3307E Truth Table
SD EN Status T
OUT
1–5 R
OUT
1–2 R
OUT
3
00 Normal Enabled Enabled Enabled
Operation
01 Normal Enabled Disabled Disabled
Operation
10 Shutdown Disabled Disabled Enabled
11 Shutdown Disabled Disabled Disabled
Table III. ADM3311 Truth Table
SD EN Status T
OUT
1–3 R
OUT
1–4 R
OUT
5
00 Normal Enabled Enabled Enabled
Operation
01 Receivers Enabled Disabled Disabled
Disabled
10 Shutdown Disabled Disabled Enabled
11 Shutdown Disabled Disabled Disabled
Table II. ADM3310E Truth Table
SD EN Status T
OUT
1–3 R
OUT
1–3 R
OUT
4–5
00 Normal Enabled Enabled Enabled
Operation
01 Receivers Enabled Disabled Disabled
Disabled
10 Shutdown Disabled Disabled Enabled
11 Shutdown Disabled Disabled Disabled
Table IV. ADM3312E/ADM3315E Truth Table
SD EN Status T
OUT
1–3 R
OUT
1–2 R
OUT
3
00 Normal Enabled Enabled Enabled
Operation
01 Normal Enabled Disabled Disabled
Operation
10 Shutdown Disabled Disabled Enabled
11 Shutdown Disabled Disabled Disabled
REV. G
–7–
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
Typical Performance Characteristics
9
HIGH
T
OUT
7
5
SD
V
TPC 1. Charge Pump V+ Exiting Shutdown
SD
V
3
1
Tx O/P – V
–1
–3
–5
LOW
T
OUT
–7
0 200 400 600 800 1000
LOAD CAPACITANCE – pF
TPC 4. Transmitter Output vs. Load Capacitance
(VCC = 3.3 V, Data Rate = 460 kbps)
40
35
30
25
20
15
SLEW RATE – V/s
10
5
TPC 2. Charge Pump V– Exiting Shutdown
9
7
5
3
1
–1
V+/V– – V
–3
–5
–7
–9
0 5 10 15 20
V+
V–
LOAD CURRENT – mA
TPC 3. Charge Pump V+, V– vs. Load Current
(VCC = 3.3 V)
0
0
LOAD CAPACITANCE – pF
2500200015001000500
TPC 5. Slew Rate vs. Load Capacitance (VCC = 3.3 V)
25
20
15
– mA
CC
I
10
5
0
0 200 400 600 800 1000 1200
LOAD CAPACITANCE – pF
TPC 6. Supply Current vs. Load Capacitance (RL = 3 kW)
(VCC = 3.3 V, Data Rate = 460 kbps)
–8–
REV. G
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
SD
TX O/P LOW
25
20
15
– mA
CC
I
10
5
0
0 200 400 600 800 1000 1200
TCP 7. Supply Current vs. Load Capacitance (RL = Infinite)
(V
= 3.3 V, Data Rate = 460 kbps)
CC
LOAD CAPACITANCE – pF
TPC 10. Transmitter Output (Low) Exiting Shutdown
30
28
26
24
22
20
18
16
SUPPLY CURRENT – mA
14
12
10
0 600200 400
LOAD CAPACITANCE – pF
460kbps
250kbps
125kbps
800
TPC 8. Supply Current vs. Load Capacitance
(V
= 3.3 V, RL = 5 kW)
CC
1000
SD
TX O/P
HIGH
10
8
6
4
2
0
VOLTAGE – V
–2
OUT
Tx
–4
–6
–8
–10
0 200 400 600 800 1000
LOAD CAPACITANCE – pF
TPC 11. Transmitter Output Voltage High/Low vs. Load
Capacitance (V
300
250
200
150
= 3.3 V, CLK = 1 Mb/s, RL = 5 kW, ADM3307E)
CC
TPC 9. Transmitter Output (High) Exiting Shutdown
REV. G
100
OSCILLATOR FREQUENCY – kHz
50
0
0 5 10 15 20
LOAD CURRENT – mA
TPC 12. Oscillator Frequency vs. Load Current
–9–
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
600
500
400
300
– A
CC
I
200
100
0
2.6 2.8 3.0 3.2 3.4 3.6
VCC – V
TCP 13. ICC vs. VCC (Unloaded)
25
20
15
– mA
CC
I
10
5
0
2.6 2.8 3.0 3.2 3.4 3.6
V
– V
CC
TPC 14. ICC vs. VCC (RL = 3 kW)
–10–
REV. G
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
CIRCUIT DESCRIPTION
The internal circuitry consists mainly of four sections. These
include the following:
1. A charge pump voltage converter
2. 3.3 V logic to EIA-232 transmitters
3. EIA-232 to 3.3 V logic receivers
4. Transient protection circuit on all I/O lines
Charge Pump DC-to-DC Voltage Converter
The charge pump voltage converter consists of a 250 kHz (300 kHz
for ADM3307E) oscillator and a switching matrix. The converter
generates a ±9 V supply from the input 3.0 V level. This is done
in two stages using a switched capacitor technique, as illustrated.
First, the 3.0 V input supply is tripled to 9.0 V using capacitor
C4 as the charge storage element. The +9.0 V level is then
inverted to generate –9.0 V using C5 as the storage element.
However, it should be noted that, unlike other charge pump dc-todc converters, the charge pump on the ADM3307E does not run
open-loop. The output voltage is regulated to ±7.25 V (or ± 6.5 V
for the ADM3310E and ADM3315E) by the Green Idle circuit
and never reaches ± 9 V in practice. This saves power as well as
maintains a more constant output voltage.
V+ = 3V
V
CC
GND
INTERNAL
OSCILLATOR
S1
S2
S3
+
S4
S5
V
CC
S6
+
C2C1
C4
S7
CC
+
V
CC
Figure 1. Charge Pump Voltage Tripler
The tripler operates in two phases. During the oscillator low
phase, S1 and S2 are closed and C1 charges rapidly to V
CC
.
S3, S4, and S5 are open, and S6 and S7 are closed.
During the oscillator high phase, S1 and S2 are open, and S3
and S4 are closed, so the voltage at the output of S3 is 2V
CC
.
This voltage is used to charge C2. In the absence of any discharge current, C2 charges up to 2V
after several cycles.
CC
During the oscillator high phase, as previously mentioned, S6
and S7 are closed, so the voltage at the output of S6 is 3V
CC
.
This voltage is then used to charge C3. The voltage inverter
is illustrated in Figure 2.
FROM
VOLTAGE
TRIPLER
V+
GND
INTERNAL
OSCILLATOR
S8
S9
S10
+
C3
S11
C5
+
GND
V– = – (V+)
Figure 2. Charge Pump Voltage Inverter
During the oscillator high phase, S10 and S11 are open, while
S8 and S9 are closed. C3 is charged to 3V
from the output of
CC
the voltage tripler over several cycles. During the oscillator low
phase, S8 and S9 are open, while S10 and S11 are closed. C3 is
connected across C5, whose positive terminal is grounded and
whose negative terminal is the V– output. Over several cycles,
C5 charges to –3 V
CC
.
The V+ and V– supplies may also be used to power external
circuitry if the current requirements are small. Please refer to
TPC 3 in the Typical Performance Characteristics section.
What Is Green Idle?
Green Idle is a method of minimizing power consumption under
idle (no transmit) conditions while still maintaining the ability to
transmit data instantly.
How Does it Work?
Charge pump type dc-to-dc converters used in RS-232 line drivers
normally operate open-loop, i.e., the output voltage is not regulated in any way. Under light load conditions, the output voltage
is close to twice the supply voltage for a doubler and three times
the supply voltage for a tripler, with very little ripple. As the load
current increases, the output voltage falls and the ripple voltage
increases.
Even under no-load conditions, the oscillator and charge pump
operate at a very high frequency with consequent switching losses
and current drain.
Green Idle works by monitoring the output voltage and maintaining it at a constant value of around 7 V*. When the voltage rises
above 7.25 V** the oscillator is turned off. When the voltage falls
below 7 V*, the oscillator is turned on and a burst of charging
pulses is sent to the reservoir capacitor. When the oscillator is
turned off, the power consumption of the charge pump is virtually zero, so the average current drain under light load conditions
is greatly reduced.
A block diagram of the Green Idle circuit is shown in Figure 3.
Both V+ and V– are monitored and compared to a reference
voltage derived from an on-chip band gap device. If either V+
or V– fall below 7 V*, the oscillator starts up until the
voltage rises above 7.25
START/STOP
SHUTDOWN
START/STOP
V**.
V+ VOLTAGE
COMPARATOR
WITH 250mV
HYSTERESIS
CHARGE
PUMP
V– VOLTAGE
COMPARATOR
WITH 250mV
HYSTERESIS
BAND GAP
VOLTAGE
REFERENCE
V+
V–
TRANSCEIVERS
Figure 3. Block Diagram of Green Idle Circuit
NOTES
*For ADM3310E and ADM3315E, replace with 6.25 V.
**For ADM3310E and ADM3315E, replace with 6.5 V.
REV. G
–11–
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
The operation of Green Idle for V+ under various load conditions
is illustrated in Figure 4. Under light load conditions, C1 is
maintained in a charged condition, and only a single oscillator
pulse is required to charge up C2. Under these conditions, V+
may actually overshoot 7.25 V** slightly.
1
7.25V
V+
2
7V
OSC
1
7.25V
V+
2
7V
OSC
1
7.25V
V+
2
7V
OSC
NOTES
1
FOR ADM3310E AND ADM3315E REPLACE WITH 6.5V.
2
FOR ADM3310E AND ADM3315E REPLACE WITH 6.25V.
OVERSHOOT
LIGHT
LOAD
MEDIUM
LOAD
HEAVY
LOAD
Figure 4. Operation of Green Idle under Various Load
Conditions
Under medium load conditions, it may take several cycles for C2
to charge up to 7.25 V**. The average frequency of the oscillator
is higher because there are more pulses in each burst and the
bursts of pulses are closer together and more frequent.
Under high load conditions, the oscillator is on continuously if
the charge pump output cannot reach 7.25 V**.
Green Idle Versus Shutdown
Shutdown mode minimizes power consumption by shutting down
the charge pump altogether. In this mode, the switches in the
voltage tripler are configured so V+ is connected directly to V
CC
.
V– is zero because there is no charge pump operation to charge C5.
This means there is a delay when coming out of Shutdown mode
before V+ and V– achieve their normal operating voltages. Green
Idle maintains the transmitter supply voltages under transmitter
idle conditions so this delay does not occur.
Doesn’t it Increase Supply Voltage Ripple?
The ripple on the output voltage of a charge pump operating in
open-loop depends on three factors: the oscillator frequency, the
value of the reservoir capacitor, and the load current. The value of
the reservoir capacitor is fixed. Increasing the oscillator frequency
decreases the ripple voltage; decreasing the oscillator frequency
increases it. Increasing the load current increases the ripple volt-
NOTES
*For ADM3310E and ADM3315E, replace with 6.25 V.
**For ADM3310E and ADM3315E, replace with 6.5 V.
–12–
age; decreasing the load current decreases it. The ripple voltage
at light loads is naturally lower than that for high load currents.
Using Green Idle, the ripple voltage is determined by the high and
low thresholds of the Green Idle circuit. These are nominally 7 V*
and 7.25 V**, so the ripple is 250 mV under most load conditions.
With very light load conditions, there may be some overshoot
above 7.25 V**, so the ripple is slightly greater. Under heavy load
conditions where the output never reaches 7.25 V**, the Green Idle
circuit is inoperative and the ripple voltage is determined by the load
current, the same as in a normal charge pump.
What about Electromagnetic Compatibility?
Green Idle does not operate with a constant oscillator frequency.
As a result, the frequency and spectrum of the oscillator signal vary
with load. Any radiated and conducted emissions also vary accordingly. Like other Analog Devices RS-232 transceiver products, the
ADM33xxE devices feature slew rate limiting and other techniques
to minimize radiated and conducted emissions.
Transmitter (Driver) Section
The drivers convert 3.3 V logic input levels into EIA-232 output
levels. With V
= 3.0 V and driving an EIA-232 load, the output
CC
voltage swing is typically ± 6.4 V (or ± 5.5 V for ADM3310E
and ADM3315E).
Unused inputs may be left unconnected, as an internal 400 kV
pull-up resistor pulls them high forcing the outputs into a low
state. The input pull-up resistors typically source 8 mA when
grounded, so unused inputs should either be connected to V
CC
or left unconnected in order to minimize power consumption.
Receiver Section
The receivers are inverting level shifters that accept RS-232 input
levels and translate them into 3.3 V logic output levels. The inputs
have internal 5 kW pull-down resistors (22 kW for the ADM3310E)
to ground and are also protected against overvoltages of up to ±30 V.
Unconnected inputs are pulled to 0 V by the internal 5 kW (or
22 kW for the ADM3315E) pull-down resistor. This, therefore,
results in a Logic 1 output level for unconnected inputs or for
inputs connected to GND.
The receivers have Schmitt trigger inputs with a hysteresis level
of 0.14 V. This ensures error-free reception for both noisy inputs
and for inputs with slow transition times.
ENABLE AND SHUTDOWN
The enable function is intended to facilitate data bus connections
where it is desirable to three-state the receiver outputs. In the
disabled mode, all receiver outputs are placed in a high impedance state. The shutdown function is intended to shut the device
down, thereby minimizing the quiescent current. In shutdown,
all transmitters are disabled. All receivers are shut down, except
for receiver R3 (ADM3307E, ADM3312E, and ADM3315E),
receiver R5 (ADM3311E), and receivers R4 and R5 (ADM3310E).
Note that disabled transmitters are not three-stated in shutdown,
so it is not permitted to connect multiple (RS-232) driver outputs
together.
The shutdown feature is very useful in battery-operated systems
since it reduces the power consumption to 66 nW. During shutdown, the charge pump is also disabled. When exiting shutdown,
the charge pump is restarted and it takes approximately 100 ms
for it to reach its steady state operating conditions.
REV. G
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
Tx
D1
D2
TRANSMITTER
INPUT
TRANSMITTER
OUTPUT
D3
D4
3V
EN INPUT
0V
V
OH
RECEIVER
OUTPUT
V
OL
t
DR
VOH – 0.1V
V
+ 0.1V
OL
Figure 5. Receiver Disable Timing
3V
EN INPUT
0V
V
OH
RECEIVER
OUTPUT
V
OL
t
ER
3V
0.4V
Figure 6. Receiver Enable Timing
High Baud Rate
The ADM33xxE features high slew rates, permitting data transmission at rates well in excess of the EIA/RS-232E specifications.
RS-232 voltage levels are maintained at data rates up to 230 kbps
(460 kbps for ADM3307E) under worst-case loading conditions.
This allows for high speed data links between two terminals.
LAYOUT AND SUPPLY DECOUPLING
Because of the high frequencies at which the ADM33xxE oscillator
operates, particular care should be taken with printed circuit
board layout, with all traces being as short as possible and C1 to
C3 being connected as close to the device as possible. The use
of a ground plane under and around the device is also highly
recommended.
When the oscillator starts up during Green Idle operation, large
current pulses are taken from V
. For this reason, VCC should be
CC
decoupled with a parallel combination of 10 mF tantalum and
0.1 mF ceramic capacitors, mounted as close to the V
pin as
CC
possible.
Capacitors C1 to C3 can have values between 0.1 mF and 1 mF.
Larger values give lower ripple. These capacitors can be either
electrolytic capacitors chosen for low equivalent series resistance
(ESR) or nonpolarized types, but the use of ceramic types is
highly recommended. If polarized electrolytic capacitors are
used, polarity must be observed (as shown by C1+).
The transmitter outputs and receiver inputs have a similar protection structure. The receiver inputs can also dissipate some of the
energy through the internal 5 kW (or 22 kW for the ADM3310E)
resistor to GND as well as through the protection diodes.
RECEIVER
INPUT
R
IN
Rx
D1
D2
Figure 7a. Receiver Input Protection Scheme
Tx
D1
D2
TRANSMITTER
OUTPUT
Figure 7b. Transmitter Output Protection Scheme
The ADM3307E protection scheme is slightly different (see
Figures 8a and 8b). The receiver inputs, transmitter inputs, and
transmitter outputs contain two back-to-back high speed clamping
diodes. The receiver outputs (CMOS outputs), SD and EN pins
contain a single reverse biased high speed clamping diode. Under
normal operation with maximum CMOS signal levels, the receiver
output, SD, and EN protection diodes have no effect because
they are reversed biased. If, however, the voltage exceeds about
15 V, reverse breakdown occurs and the voltage is clamped at
this level. If the voltage reaches –0.7 V, the diode is forward
biased and the voltage is clamped at this level. The receiver inputs
can also dissipate some of the energy through the internal 5 kW
resistor to GND as well as through the protection diodes.
RECEIVER
INPUT
Rx
D1
R
IN
D2
D3
RECEIVER
OUTPUT
Figure 8a. ADM3307E Receiver Input Protection Scheme
ESD/EFT TRANSIENT PROTECTION SCHEME
The ADM33xxE uses protective clamping structures on all inputs
and outputs that clamp the voltage to a safe level and dissipate
the energy present in ESD (electrostatic) and EFT (electrical fast
transients) discharges. A simplified schematic of the protection
structure is shown below in Figures 7a and 7b (see Figures 8a and
8b for ADM3307E protection structure). Each input and output
contains two back-to-back high speed clamping diodes. During normal operation with maximum RS-232 signal levels, the diodes have
no effect as one or the other is reverse biased depending on the
polarity of the signal. If however the voltage exceeds about ±50 V,
reverse breakdown occurs and the voltage is clamped at this level.
The diodes are large p-n junctions designed to handle the
instantaneous current surge that can exceed several amperes.
REV. G
–13–
Figure 8b. ADM3307E Transmitter Output Protection Scheme
The protection structures achieve ESD protection up to ±15 kV on
all RS-232 I/O lines (and all CMOS lines, including SD and EN
for the ADM3307E). The methods used to test the protection
scheme are discussed later.
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
ESD TESTING (IEC 1000-4-2)
IEC 1000-4-2 (previously 801-2) specifies compliance testing using
two coupling methods, contact discharge and air-gap discharge.
Contact discharge calls for a direct connection to the unit being
tested. Air-gap discharge uses a higher test voltage but does not
make direct contact with the unit under testing. With air discharge,
the discharge gun is moved toward the unit under testing, which
develops an arc across the air gap, thus the term air discharge.
This method is influenced by humidity, temperature, barometric
pressure, distance, and rate of closure of the discharge gun. The
contact discharge method, while less realistic, is more repeatable
and is gaining acceptance in preference to the air-gap method.
Although very little energy is contained within an ESD pulse,
the extremely fast rise time coupled with high voltages can cause
failures in unprotected semiconductors. Catastrophic destruction
can occur immediately as a result of arcing or heating. Even if
catastrophic failure does not occur immediately, the device may
suffer from parametric degradation that may result in degraded
performance. The cumulative effects of continuous exposure can
eventually lead to complete failure.
I/O lines are particularly vulnerable to ESD damage. Simply
touching or plugging in an I/O cable can result in a static discharge
that can damage or completely destroy the interface product
connected to the I/O port. Traditional ESD test methods, such as
the MIL-STD-883B method 3015.7, do not fully test a product’s
susceptibility to this type of discharge. This test was intended to
test a product’s susceptibility to ESD damage during handling. Each
pin is tested with respect to all other pins. There are some important differences between the traditional test and the IEC test:
(a) The IEC test is much more stringent in terms of discharge
energy. The peak current injected is over four times greater.
(b) The current rise time is significantly faster in the IEC test.
(c) The IEC test is carried out while power is applied to the device.
It is possible that the ESD discharge could induce latch-up in the
device under test. This test, therefore, is more representative of
a real world I/O discharge where the equipment is operating
normally with power applied. For maximum peace of mind,
however, both tests should be performed, ensuring maximum
protection both during handling and later during field service.
HIGH
VOLTAGE
GENERATOR
R1
C1
R2
DEVICE
UNDER TEST
100
90
%
–
PEAK
I
36.8
10
t
RL
t
DL
TIME t
Figure 10. Human Body Model ESD Current Waveform
100
90
– %
PEAK
I
10
0.1 TO 1ns
30ns
60ns
TIME t
Figure 11. IEC1000-4-2 ESD Current Waveform
The ADM33xxE devices are tested using both of the previously
mentioned test methods. All pins are tested with respect to all
other pins as per the Human Body Model, ESD Assoc. Std. 55.1
specification. In addition, all I/O pins are tested as per the
IEC 1000-4-2 test specification. The products were tested under
the following conditions:
(a) Power-On—Normal Operation
(b) Power-Off
There are four levels of compliance defined by IEC 1000-4-2. The
ADM33xxE parts meet the most stringent compliance level for
both contact and air-gap discharge. This means the products are
able to withstand contact discharges in excess of 8 kV and airgap discharges in excess of 15 kV.
Table V. IEC 1000-4-2 Compliance Levels
ESD TEST METHOD R2 C1
HUMAN BODY MODEL
ESD ASSOC. STD 55.1 1.5kV 100pF
IEC1000-4-2 330V 150pF
Figure 9. ESD Test Standards
Level Contact Discharge (kV) Air Discharge (kV)
12 2
24 4
36 8
48 15
–14–
REV. G
PIN 1
INDICATOR
1.00
0.85
0.80
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
OUTLINE DIMENSIONS
32-Lead Lead Frame Chip Scale Package [LFCSP]
(CP-32-2)
Dimensions shown in millimeters
12 MAX
SEATING
PLANE
5.00
BSC SQ
TOP
VIEW
0.80 MAX
0.65 TYP
0.30
0.23
0.18
COMPLIANT TO JEDEC STANDARDS MO-220-VHHD-2
4.75
BSC SQ
0.20 REF
0.05 MAX
0.02 NOM
COPLANARITY
0.60 MAX
0.50
BSC
0.50
0.40
0.30
0.08
28-Lead Shrink Small Outline Package [SSOP]
(RS-28)
Dimensions shown in millimeters
10.50
10.20
9.90
25
24
17
16
0.60 MAX
BOTTOM
VIEW
32
1
8
9
3.50 REF
PIN 1
INDICATOR
3.25
SQ
3.10
2.95
0.25 MIN
28 15
1
2.00 MAX
0.05
MIN
0.65
BSC
0.38
0.22
COMPLIANT TO JEDEC STANDARDS MO-150AH
24-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-24)
Dimensions shown in millimeters
7.90
7.80
7.70
24
PIN 1
0.15
0.05
0.10 COPLANARITY
0.65
BSC
0.30
0.19
COMPLIANT TO JEDEC STANDARDS MO-153AD
13
121
1.20
MAX
SEATING
PLANE
4.50
4.40
4.30
6.40 BSC
0.20
0.09
8
0
0.75
0.60
0.45
REV. G
14
1.85
1.75
1.65
SEATING
PLANE
–15–
5.60
8.20
5.30
7.80
5.00
7.40
0.10
COPLANARITY
0.25
0.09
8
4
0
0.95
0.75
0.55
28-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-28)
Dimensions shown in millimeters
9.80
9.70
9.60
28
PIN 1
0.15
0.05
COPLANARITY
0.10
0.65
BSC
0.30
0.19
COMPLIANT TO JEDEC STANDARDS MO-153AE
15
141
SEATING
PLANE
1.20
MAX
4.50
4.40
4.30
0.20
0.09
6.40 BSC
8
0
0.75
0.60
0.45
ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E
Revision History
Location Page
4/04—Data Sheet changed from REV. F to REV. G
Changes to ORDERING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Updated OUTLINE DIMENSIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
8/02—Data Sheet changed to REV. F
ADM3307E (REV. 0), ADM3311E (REV. E), and ADM3312E (REV. A)
data sheets merged into REV. G of ADM33xxE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UNIVERSAL
ADM3310E (REV. PrA now prelims) and ADM3315E (REV. PrA) added . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UNIVERSAL
Edits to FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Edits to APPLICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Edits to GENERAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Edits to FUNCTIONAL BLOCK DIAGRAMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Edits to SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Edits to ABSOLUTE MAXIMUM RATINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
ADM33xx PRODUCT SELECTION GUIDE added . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Added ADM3307E, ADM3310E, ADM3312E, and ADM3315E PIN CONFIGURATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Edits to PIN FUNCTION DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Added ADM3307E, ADM3310E, ADM3312E, and ADM3315E Truth Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Edits to TPCs 1–14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
TPCs 15–18 deleted . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Edits to CIRCUIT DESCRIPTION section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Edits to Charge Pump DC-to-DC Voltage Converter section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Edits to How Does It Work section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Edits to Green Idle vs. Shutdown section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Edits to Doesn’t It Increase Supply Voltage Ripple? section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Edits to What About Electromagnetic Compatibility? section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Edits to Transmitter (Driver) section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Edits to Receiver section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Edits to ENABLE AND SHUTDOWN section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Edits to High Baud Rate section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Edits to ESD/EFT TRANSIENT PROTECTION SCHEME . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Added Figures 8a and 8b and renumbered the figures that followed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Edits to ESD TESTING (IEC 1000-4-2) section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Edits to Figure 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Deleted Table II and Table III and replaced them with Table V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Added RU-24 PACKAGE OUTLINE; updated CP-32, RS-28 and RU-28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
C02915–0–4/04(G)
–16–
REV. G
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