REV. 0
–2–
ADM223/ADM230L–ADM241L–SPECIFICA TIONS
VCC = +5 V 6 5% (ADM230L, 33L, 35L, 37L); V+ = 7.5 V to 13.2 V (ADM231L & ADM239L); C1–C4 = 1.0 mF Ceramic. All Specifications T
MIN
to
T
MAX
unless otherwise noted.)
Parameter Min Typ Max Units Test Conditions/Comments
Output Voltage Swing ±5 ±9 Volts All Transmitter Outputs Loaded with 3 kΩ to Ground
V
CC
Power Supply Current 2 3.0 mA No Load, All T
INS
= VCC (Except ADM223)
3.5 6 mA No Load, All T
INS
= GND
0.4 1 mA ADM231L, ADM239L
V+ Power Supply Current 1.5 4 mA No Load, V+ = 12 V ADM231L & ADM239L Only
Shutdown Supply Current 1 5 µA
Input Logic Threshold Low, V
INL
0.8 V TIN, EN, SD, EN, SD
Input Logic Threshold High, V
INH
2.0 V TIN, EN, SD, EN, SD
Logic Pull-Up Current 10 25 µAT
IN
= 0 V
RS-232 Input Voltage Range –30 +30 V
RS-232 Input Threshold Low 0.8 1.2 V
RS-232 Input Threshold High 1.7 2.4 V
RS-232 Input Hysteresis 0.2 0.5 1.0 V
RS-232 Input Resistance 3 5 7 kΩ
TTL/CMOS Output Voltage Low, V
OL
0.4 V
TTL/CMOS Output Voltage High, V
OH
3.5 V I
OUT
= –1.0 mA
TTL/CMOS Output Leakage Current 0.05 ±5 µA
EN = VCC, 0 V ≤ R
OUT
≤ V
CC
Output Enable Time (TEN) 250 ns ADM223, ADM235L, ADM236L, ADM239L, ADM241L
(Figure 25. C
L
= 150 pF)
Output Disable Time (T
DIS
) 50 ns ADM223, ADM235L, ADM236L, ADM239L, ADM241L
(Figure 25. R
L
= 1 kΩ)
Propagation Delay 0.5 µs RS-232 to TTL
Instantaneous Slew Rate
1
25 30 V/µsCL = 10 pF, RL = 3-7 kΩ, TA = +25°C
Transition Region Slew Rate 5 V/ µsR
L
= 3 kΩ, CL = 2500 pF
Measured from +3 V to –3 V or –3 V to +3 V
Output Resistance 300 Ω V
CC
= V+ = V– = 0 V, V
OUT
= ±2 V
RS-232 Output Short Circuit Current ±10 mA
NOTE
1
Sample tested to ensure compliance.
Specifications subject to change without notice.
Thermal Impedance, θ
JA
N-14 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140°C/W
N-16 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135°C/W
N-20 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
N-24 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120°C/W
N-24A DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110°C/W
R-16 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105°C/W
R-20 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105°C/W
R-24 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85°C/W
R-28 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80°C/W
RS-28 SSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Q-14 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105°C/W
Q-16 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Q-20 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Q-24 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C/W
D-24 Ceramic . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Operating Temperature Range
Commercial (J Version) . . . . . . . . . . . . . . . . . . . 0 to +70°C
Industrial (A Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . –65°C to + 150°C
Lead Temperature, Soldering . . . . . . . . . . . . . . . . . . +300°C
Vapour Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2000 V
*This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods of time may affect reliability.
VCC = +5 V 6 10% (ADM223, 31L,
32L, 34L, 36L, 38L, 39L, 41L);
ABSOLUTE MAXIMUM RATINGS*
(TA = 25°C unless otherwise noted)
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . .(V
CC
– 0.3 V) to +14 V
V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –14 V
Input Voltages
T
IN
. . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (VCC + 0.3 V)
R
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30 V
Output Voltages
T
OUT
. . . . . . . . . . . . . . . . . . (V+, + 0.3 V) to (V–, – 0.3 V)
R
OUT
. . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (VCC + 0.3 V)
Short Circuit Duration
T
OUT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Continuous
Power Dissipation
N-14 DIP (Derate 10 mW/°C above +70°C) . . . . . 800 mW
N-16 DIP (Derate 10.5 mW/°C above +70°C) . . . 840 mW
N-20 DIP (Derate 11 mW/°C above +70°C) . . . . . 890 mW
N-24 DIP (Derate 13.5 mW/°C above +70°C) . . 1000 mW
N-24A DIP (Derate 13.5 mW/°C above +70°C) . . 500 mW
R-16 SOIC (Derate 9 mW/°C above +70°C) . . . . . 760 mW
R-20 SOIC (Derate 9.5 mW/°C above +70°C) . . . 800 mW
R-24 SOIC (Derate 12 mW/°C above +70°C) . . . . 850 mW
R-28 SOIC (Derate 12.5 mW/°C above +70°C) . . 900 mW
RS-28 SSOP (Derate 10 mW/°C above +70°C) . . . 900 mW
Q-14 Cerdip (Derate 10 mW/°C above +70°C) . . . 720 mW
Q-16 Cerdip (Derate 10 mW/°C above +70°C) . . . 800 mW
Q-20 Cerdip (Derate 11.2 mW/°C above +70°C) . . . 890 mW
Q-24 Cerdip (Derate 12.5 mW/°C above +70°C) . . 1000 mW
D-24 Ceramic (Derate 20 mW/°C above +70°C) . . 1000 mW