EMI/EMC-Compliant, ±15 kV ESDProtected,
T
RS-232 Line Drivers/Receivers
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
FEATURES
Complies with 89/336/EEC EMC directive
ESD protection to IEC 1000-4-2 (801-2)
Contact discharge: ±8 kV
Air-gap discharge: ±15 kV
Human body model: ±15 kV
EFT/burst immunity (IEC 1000-4-4)
Low EMI emissions (EN 55022)
Eliminates need for TransZorb® suppressors
230 kbps data rate guaranteed
Single 5 V power supply
TTL/CMOS
INPUTS
Shutdown mode 1 μW
Plug-in upgrade for MAX2xxE
Space saving TSSOP package available
APPLICATIONS
Laptop computers
Notebook computers
Printers
Peripherals
Modems
GENERAL DESCRIPTION
The ADM2xxE is a family of robust RS-232 and V.28 interface
devices that operate from a single 5 V power supply. These products are suitable for operation in harsh electrical environments
and are compliant with the EU directive on electromagnetic
compatibility (EMC) (89/336/EEC). The level of emissions and
immunity are both in compliance. EM immunity includes ESD
protection in excess of ±15 kV on all I/O lines (IEC 1000-4-2),
fast transient burst protection (IEC 100044), and radiated
immunity (IEC 1000-4-3). EM emissions include radiated and
conducted emissions as required by Information Technology
Equipment EN 55022, CISPR 22.
All devices fully conform to the EIA-232-E and CCITT V.28
specifications and operate at data rates up to 230 kbps. Shutdown and enable control pins are provided on some of the
products (see
The shutdown function on the ADM211E disables the charge
pump and all transmitters and receivers. On the ADM213E the
Table 1. Selection Table
Model Supply Voltage Drivers Receivers ESD Protection Shutdown Enable Packages
ADM206E 5 V 4 3 ±15 kV Yes Yes RW-24
ADM207E 5 V 5 3 ±15 kV No No N-24-1, RW-24, RS-24, RU-24
ADM208E 5 V 4 4 ±15 kV No No N-24-1, RW-24, RS-24, RU-24
ADM211E 5 V 4 5 ±15 kV Yes Yes RW-28, RS-28, RU-28
ADM213E 5 V 4 5 ±15 kV
1
Two receivers active.
Rev. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Table 1 ).
TL/CMOS
OUTPUTS
EN (ADM211E)
EN (ADM213E)
1
INTERNAL 400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
2
INTERNAL 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
charge pump, all transmitters, and three of the five receivers are
disabled. The remaining two receivers remain active, thereby
allowing monitoring of peripheral devices. This feature allows
the device to be shut down until a peripheral device begins
communication. The active receivers can alert the processor,
which can then take the ADM213E out of the shutdown mode.
Operating from a single 5 V supply, four external 0.1 μF
capacitors are required.
The ADM207E and ADM208E are available in 24-lead PDIP, SSOP,
available in 28-lead SSOP, TSSOP, and SOIC_W packages. All
products are backward compatible with earlier ADM2xx products,
facilitating easy upgrading of older designs.
SHDN
Yes (
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved.
CONNECTION DIAGRAM
12
C1+
+
0.1µF
10V
+
0.1µF
10V
T1
IN
T2
IN
1
T3
IN
T4
IN
R1
OUT
R2
OUT
R3
OUT
R4
OUT
R5
OUT
)1
+5V TO +10V
C1–
C2+
C2–
VOLTAGE
DOUBLER
+10V TO –10V
VOLTAGE
INVERTER
GND
10
14
15
16
7
6
20
21
8
5
26
22
19
24
Figure 1.
Yes (EN) RW-28, RS-28, RU-28
T1
T2
T3
T4
R1
R2
R3
R4
R5
ADM211E/
ADM213E
V
CC
V+
V–
5VINPUT
11
13
17
2
3
1
28
9
4
27
23
18
25
+
+
+
0.1µF
0.1µF
6.3V
0.1µF
10V
T1
OUT
T2
OUT
RS-232
OUTPUTS
T3
OUT
T4
OUT
R1
IN
R2
IN
RS-232
R3
IN
INPUTS
R4
IN
R5
IN
SHDN (ADM211E)
SHDN (ADM213E)
2
0068-001
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
TABLE OF CONTENTS
Features.............................................................................................. 1
Applications....................................................................................... 1
General Description ......................................................................... 1
Connection Diagram ....................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Pin Configurations and Function Descriptions ........................... 5
Typical Performance Characteristics ............................................. 8
Theory of Operation ...................................................................... 10
Circuit Description..................................................................... 10
REVISION HISTORY
9/06—Rev. D to Rev. E
Updated Format..................................................................Universal
Changes to Figure 1 and Table 1..................................................... 1
Changes to Table 2............................................................................ 3
Changes to Figure 2, Figure 3, and Figure 5.................................. 5
Changes to Figure 7 and Figure 9................................................... 6
Changes to Figure 11........................................................................ 7
Changes to Figure 17........................................................................ 8
Updated Outline Dimensions....................................................... 16
Changes to Ordering Guide.......................................................... 19
4/05—Rev. C to Rev. D
Changes to Specifications Section.................................................. 2
Changes to Ordering Guide............................................................ 4
Updated Outline Dimensions......................................................... 6
Enable and Shutdown................................................................ 10
High Baud Rate........................................................................... 11
ESD/EFT Transient Protection Scheme .................................. 11
ESD Testing (IEC 100042) ..................................................... 11
EFT/Burst Testing (IEC 100044)........................................... 12
IEC 1000-4-3 Radiated Immunity ........................................... 13
Emissions/Interference.............................................................. 14
Conducted Emissions................................................................ 14
Radiated Emissions.................................................................... 14
Outline Dimensions....................................................................... 16
Ordering Guide .......................................................................... 19
3/01—Rev. B to Rev. C
Changes to Features Section ............................................................1
Changes to Specifications Table ......................................................2
Changes to Absolute Maximum Ratings........................................3
Changes to Figure 6 ..........................................................................5
Changes to Typical Performance Characteristics Section ...... 7, 8
Changes to Table V......................................................................... 11
Rev. E | Page 2 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
SPECIFICATIONS
VCC = 5.0 V ± 10%, C1 to C4 = 0.1 μF. All specifications T
Table 2.
Parameter Min Typ Max Unit Test Conditions/Comments
DC CHARACTERISTICS
Operating Voltage Range 4.5 5.0 5.5 V
VCC Power Supply Current 3.5 13 mA No load
SHUTDOWN SUPPLY CURRENT 0.2 10 μA
LOGIC
Input Pull-Up Current 10 25 μA TIN = GND
Input Logic Threshold Low, V
Input Logic Threshold High, V
Input Logic Threshold High, V
0.8 V
INL
2.0 V TIN
INH
2.0 V
INH
TTL/CMOS Output Voltage Low, VOL 0.4 V I
TTL/CMOS Output Voltage High, VOH 3.5 V I
TTL/CMOS Output Leakage Current +0.05 ±10 μA
RS-232 RECEIVER
Input Voltage Range
1
−30 +30 V
Input Threshold Low 0.8 1.3 V
Input Threshold High 2.0 2.4 V
Input Hysteresis 0.65 V
Input Resistance 3 5 7 kΩ TA = 0°C to 85°C
RS-232 TRANSMITTER
Output Voltage Swing ±5.0 ±9.0 V All transmitter outputs loaded with 3 kΩ to ground
Output Resistance 300 Ω VCC = 0 V, V
Output Short-Circuit Current ±6 ±20 ±60 mA
TIMING CHARACTERISTICS
Maximum Data Rate 230 kbps RL = 3 kΩ to 7 kΩ, CL = 50 pF to 2500 pF
Receiver Propagation Delay, TPHL, TPLH 0.4 2 μs CL = 150 pF
Receiver Output Enable Time, tER 120 ns
Receiver Output Disable Time, tDR 120 ns
Transmitter Propagation Delay, TPHL, TPLH 1 μs RL = 3 kΩ, CL = 2500 pF
Transition Region Slew Rate 8 V/μs
EM IMMUNITY
ESD Protection (I/O Pins) ±15 kV Human body model
±15 kV IEC 1000-4-2 air-gap discharge
±8 kV IEC 1000-4-2 contact discharge
Radiated Immunity 10 V/m IEC 1000-4-3
1
Guaranteed by design.
Table 3. ADM211E Truth Table
SHDN
0 0 Normal operation Enabled Enabled
0 1 Normal operation Enabled Disabled
1 X1 Shutdown Disabled Disabled
1
X = don’t care.
EN
Status T
1:4 R
OUT
OUT
MIN
1:5
to T
, unless otherwise noted.
MAX
T
EN,
OUT
OUT
EN = VCC, EN = GND, 0 V ≤ R
R
+3 V to −3 V or −3 V to +3 V
Table 4. ADM213E Truth Table
SHDN
0 0 Shutdown Disabled Disabled Disabled
0 1 Shutdown Disabled Disabled Enabled
1 0 Normal operation Enabled Disabled Disabled
1 1 Normal operation Enabled Enabled Enabled
EN Status T
, EN, EN, SHDN, SHDN
IN
EN, SHDN, SHDN
= 1.6 mA
= −40 μA
≤ VCC
OUT
= ±2 V
OUT
= 3 kΩ, CL = 50 pF to 2500 pF, measured from
L
1:4 R
OUT
1:3 R
OUT
OUT
4:5
Rev. E | Page 3 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 5.
Parameter Rating
VCC −0.3 V to +6 V
V+ (VCC – 0.3 V) to +14 V
V– +0.3 V to −14 V
Input Voltages
TIN −0.3 V to (V+ + 0.3 V)
RIN ±30 V
Output Voltages
T
±15 V
OUT
R
−0.3 V to (VCC + 0.3 V)
OUT
Short-Circuit Duration
T
Continuous
OUT
Power Dissipation
N-24-1 PDIP
(Derate 13.5 mW/°C above 70°C)
RW-24 SOIC_W
(Derate 12 mW/°C above 70°C)
RS-24 SSOP
(Derate 12 mW/°C above 70°C)
RU-24 TSSOP
(Derate 12 mW/°C above 70°C)
RW-28 SOIC_W
(Derate 12 mW/°C above 70°C)
RS-28 SSOP
(Derate 10 mW/°C above 70°C)
RU-28 TSSOP
(Derate 12 mW/°C above 70°C)
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Lead Temperature, Soldering (10 sec) 300°C
ESD Rating
MIL-STD-883B (I/O Pins) ±15 kV
IEC 1000-4-2 Air-Gap (I/O Pins) ±15 kV
IEC 1000-4-2 Contact (I/O Pins) ±8 kV
1000 mW
900 mW
850 mW
900 mW
900 mW
900 mW
900 mW
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. E | Page 4 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
T
T
T
T
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
TTL/CMOS
INPUTS
TL/CMOS
OUTPUTS
24
T4
OUT
23
R2
IN
22
R2
OUT
21
SHDN
20
EN
19
T4
IN
18
T3
IN
17
R3
OUT
16
R3
IN
15
V–
14
C2–
13
C2+
R1
T3
T1
T2
OUT
OUT
OUT
R1
OUT
T2
T1
GND
V
C1+
C1–
IN
IN
IN
CC
V+
1
2
3
4
5
ADM206E
6
TOP VIEW
(Not to Scale)
7
8
9
10
11
12
Figure 2. ADM206E Pin Configuration
1
T3
OUT
2
T1
OUT
3
T2
OUT
4
R1
IN
5
R1
OUT
ADM207E
6
T2
IN
TOP VIEW
(Not to Scale)
7
T1
IN
8
GND
9
V
CC
10
C1+
11
V+
12
00068-002
C1–
Figure 4. ADM207E Pin Configuration
24
T4
OUT
23
R2
IN
22
R2
OUT
21
T5
IN
20
T5
OUT
19
T4
IN
18
T3
IN
17
R3
OUT
16
R3
IN
15
V–
14
C2–
13
C2+
00068-004
5V INPU
5V INPU
V
10
C1+
12
13
14
7
6
18
19
5
22
17
20
C1–
C2+
C2–
+5V TO +10V
VOLTAGE
DOUBLER
+10V TO –10V
VOLTAGE
INVERTER
T1
T2
T3
T4
R1
R2
R3
ADM206E
GND
8
+
0.1µF
6.3V
+
0.1µF
16V
T1
IN
T2
IN
1
T3
IN
T4
IN
R1
OUT
R2
OUT
R3
OUT
EN
9
CC
11
V+
V–
15
2
3
1
24
4
23
16
21
0.1µF
+
6.3V
0.1µF
16V
+
T1
T2
T3
T4
R1
R2
R3
SHDN
OUT
OUT
OUT
OUT
IN
IN
IN
+
0.1µF
RS-232
OUTPUTS
RS-232
INPUTS
TTL/CMOS
INPUTS
2
TL/CMOS
OUTPUTS
0.1µF
0.1µF
1
R1
R2
R3
T1
T2
T3
T4
T5
10V
10V
OUT
OUT
OUT
10
C1+
12
13
14
7
6
18
19
21
5
22
17
C1–
C2+
C2–
+5V TO +10V
VOLTAGE
DOUBLER
+10V TO –10V
VOLTAGE
INVERTER
T1
T2
T3
T4
T5
+
+
IN
IN
IN
IN
IN
GND
8
R1
R2
R3
ADM207E
V
9
CC
+
11
V+
V–
15
+
2
3
1
24
20
4
23
16
0.1µF
6.3V
0.1µF
10V
T1
T2
T3
T4
T5
R1
R2
R3
OUT
OUT
OUT
OUT
OUT
IN
IN
IN
+
0.1µF
RS-232
OUTPUTS
RS-232
INPUTS
2
1
1
INTERNAL 400k Ω PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
2
INTERNAL 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
Figure 3. ADM206E Typical Operating Circuit
0068-003
INTERNAL 400kΩ PULL-UP RESIST OR ON EACH TTL/CMOS INPUT.
2
INTERNAL 5kΩ PULL-DO WN RESIS TOR ON E ACH RS-232 INPUT .
Figure 5. ADM207E Typical Operating Circuit
00068-005
Rev. E | Page 5 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
T
T
TTL/CMOS
INPUTS
TTL/CMOS
OUTPUTS
1
T2
OUT
2
T1
OUT
3
R2
IN
4
R2
OUT
5
T1
IN
ADM208E
6
R1
OUT
TOP VIEW
(Not to Scale)
7
R1
IN
8
GND
9
V
CC
10
C1+
11
V+
12
C1–
Figure 6. ADM208E Pin Configuration
10
C1+
12
13
14
5
18
19
21
6
4
22
17
C1–
C2+
C2–
+5V TO +10V
VOLTAGE
DOUBLER
+10V TO –10V
VOLTAGE
INVERTER
T1
T2
T3
T4
GND
8
+
0.1µF
10V
+
0.1µF
10V
T1
IN
T2
IN
1
T3
IN
T4
IN
R1
OUT
R2
OUT
R3
OUT
R4
OUT
24
23
22
21
20
19
18
17
16
15
14
13
V
R1
R2
R3
R4
ADM208E
T3
R3
R3
T4
T4
T3
T2
R4
R4
V–
C2–
C2+
CC
V+
V–
OUT
IN
OUT
IN
OUT
IN
IN
OUT
IN
11
15
24
20
23
16
5V INPU
9
2
1
7
3
00068-006
+
+
0.1µF
6.3V
0.1µF
10V
T1
OUT
T2
OUT
T3
OUT
T4
OUT
R1
IN
R2
IN
R3
IN
R4
IN
+
0.1µF
RS-232
OUTPUTS
RS-232
INPUTS
R2
R1
T3
T1
T2
OUT
OUT
OUT
R2
OUT
T2
T1
OUT
R1
GND
V
C1+
C1–
CC
V+
1
2
3
4
IN
5
6
IN
7
IN
8
9
IN
10
11
12
13
14
ADM211E
TOP V IEW
(Not to Scale)
28
T4
OUT
27
R3
IN
26
R3
OUT
25
SHDN
24
EN
23
R4
IN
R4
22
OUT
21
T4
IN
T3
20
IN
R5
19
OUT
R5
18
IN
17
V–
16
C2–
15
C2+
00068-008
Figure 8. ADM211E Pin Configuration
5V INPU
12
C1+
14
15
16
7
6
20
21
8
5
26
22
19
24
C1–
C2+
C2–
+5V TO +10V
VOLTAGE
DOUBLER
+10V TO –10V
VOLTAGE
INVERTER
T1
T2
T3
T4
GND
10
+
0.1µF
10V
+
0.1µF
10V
T1
IN
T2
TTL/CMOS
INPUTS
TTL/CMOS
2
OUTPUTS
IN
1
T3
IN
T4
IN
R1
OUT
R2
OUT
R3
OUT
R4
OUT
R5
OUT
EN
V
R1
R2
R3
R4
R5
ADM211E
11
CC
+
13
V+
V–
17
+
2
3
1
28
9
4
27
23
18
25
0.1µF
6.3V
0.1µF
10V
T1
OUT
T2
OUT
T3
OUT
T4
OUT
R1
IN
R2
IN
R3
IN
R4
IN
R5
IN
SHDN
+
0.1µF
RS-232
OUTPUTS
RS-232
INPUTS
2
1
INTERNAL 400k Ω PULL-UP RESISTO R ON EACH TTL /CMOS INPUT .
2
INTERNAL 5k Ω PULL-DOWN RESIST OR ON EACH RS- 232 INPUT.
Figure 7. ADM208E Typical Operating Circuit
0068-007
1
INTERNAL 400k Ω PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
2
INTERNAL 5k Ω PULL-DOW N RESISTOR O N EACH RS-232 INPUT.
Figure 9. ADM211E Typical Operating Circuit
00068-009
Rev. E | Page 6 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
T
1
T3
OUT
2
T1
OUT
3
T2
OUT
4
R2
IN
5
R2
OUT
6
T2
IN
ADM213E
7
T1
IN
TOP VIEW
R1
(Not to Scale)
8
OUT
R1
9
IN
GND
10
11
V
CC
C1+
12
13
V+
14
C1–
1
ACTIVE IN SHUTDOWN.
28
T4
OUT
27
R3
IN
26
R3
OUT
25
SHDN
24
EN
23
R4
1
IN
22
1
R4
OUT
21
T4
IN
T3
20
IN
19
1
R5
OUT
18
1
R5
IN
17
V–
16
C2–
15
C2+
Figure 10. ADM213E Pin Configuration
12
C1+
+
0.1µF
16V
+
0.1µF
16V
T1
IN
T2
TTL/CMOS
INPUTS
00068-010
TTL/CMOS
OUTPUTS
IN
1
T3
IN
T4
IN
R1
OUT
R2
OUT
R3
OUT
R4
3
OUT
R5
3
OUT
EN
14
15
16
7
6
20
21
8
5
26
22
19
24
C1–
C2+
C2–
+5V TO +10V
VOLTAGE
DOUBLER
+10V TO –10V
VOLTAGE
INVERTER
T1
T2
T3
T4
R1
R2
R3
R4
R5
ADM213E
GND
10
5V INPU
V
11
CC
+
13
V+
17
V–
+
2
3
1
28
9
4
27
23
18
25
0.1µF
6.3V
0.1µF
16V
T1
T2
T3
T4
R1
R2
R3
R4
R5
SHDN
OUT
OUT
OUT
OUT
IN
IN
IN
IN
IN
3
3
+
0.1µF
RS-232
OUTPUTS
RS-232
INPUTS
2
1
INTERNAL 400k Ω PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
2
INTERNAL 5k Ω PULL-DO WN RESIST OR ON EACH RS-2 32 INPUT.
3
ACTIVE IN SHUTDOWN.
Figure 11. ADM213E Typical Operating Circuit
Table 6. Pin Function Descriptions
Mnemonic Function
VCC Power Supply Input (5 V ± 10%).
V+ Internally Generated Positive Supply (+9 V nominal).
V– Internally Generated Negative Supply (−9 V nominal).
GND Ground Pin. Must be connected to 0 V.
C1+, C1–
External Capacitor 1 is connected between these pins. A 0.1 μF capacitor is recommended, but larger capacitors (up to
47 μF) can be used.
C2+, C2–
External Capacitor 2 is connected between these pins. A 0.1 μF capacitor is recommended, but larger capacitors (up to
47 μF) can be used.
TIN
Transmitter (Driver) Inputs. These inputs accept TTL/CMOS levels. An internal 400 kΩ pull-up resistor to V
is connected on
CC
each input.
T
Transmitter (Driver) Outputs. These are RS-232 signal levels (typically ±9 V).
OUT
RIN
Receiver Inputs. These inputs accept RS-232 signal levels. An internal 5 kΩ pull-down resistor to GND is connected on
each input.
R
Receiver Outputs. These are TTL/CMOS output logic levels.
OUT
EN/EN Receiver Enable (active high on ADM213E, active low on ADM211E). This input is used to enable/disable the receiver
outputs. With
for the ADM211E (EN = low for the ADM213E), the receiver outputs are placed in a high impedance state. (See
and
Table 4.)
EN = low for the ADM211E (EN = high for the ADM213E), the receiver outputs are enabled. With EN = high
Tab le 3
SHDN/SHDN Shutdown Control (active low on ADM213E, active high on ADM211E). When the ADM211E is in shutdown, the charge
pump is disabled, the transmitter outputs are turned off, and all receiver outputs are placed in a high impedance state.
When the ADM213E is in shutdown, the charge pump is disabled, the transmitter outputs are turned off, and Receiver R1 to
Receiver R3 are placed in a high impedance state; Receiver R4 and Receiver R5 on the ADM213E continue to operate
normally during shutdown. (See
Table 3 and Tab le 4.) Power consumption for all parts reduces to 5 μW in shutdown.
00068-011
Rev. E | Page 7 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
T
T
TYPICAL PERFORMANCE CHARACTERISTICS
80
70
60
50
40
(dBµV)
30
20
10
0
0.33 300.6
LOG FREQUENCY (MHz)
63118
Figure 12. EMC Conducted Emissions
9
7
5
3
1
Tx O/P (V)
–1
–3
–5
–7
0 500 1000 1500 2000 2500
LOAD CAPACITANCE (pF)
Tx O/P HI
Tx O/P LO
Figure 13. Transmitter Output Voltage
High/Low vs. Load Capacitance (230 kbps)
15
LIMI
3000
00068-012
00068-013
80
70
60
50
40
(dBµV)
30
20
10
0
START 30.0MHz STOP 200. 0MHz
Figure 15. EMC Radiated Emissions
9
7
5
3
1
–1
Tx O/P (V)
–3
–5
–7
–9
4.0 4.5 5.0 5.5
Tx O/P HI LOADED
Tx O/P LO LOADED
(V)
V
CC
Figure 16. Transmitter Output Voltage vs. Power Supply Voltage
LIMI
00068-015
6.0
00068-016
10
5
0
Tx O/P (V)
–5
–10
–15
0
Tx O/P HI
Tx O/P LO
2468
LOAD CURRENT (mA)
Figure 14. Transmitter Output Voltage vs. Load Current
00068-014
10
5.00V
T
T
T
5.00V
CH2
V+, V– EXITING SHDN
M 50.0µs
1
2
3
CH1 5. 00V
CH3
Figure 17. Charge Pump V+, V− Exiting Shutdown
CH1
SHDN
V+
V–
00068-017
3.1V
Rev. E | Page 8 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
(
350
15
300
V–
250
Ω)
200
150
IMPEDANCE
100
50
0
4.5
V+
VCC (V)
Figure 18. Charge Pump Impedance vs. Power Supply Voltage
10
V+/V– (V)
–5
–10
00068-018
5.55.35.14. 94.7
–15
V+
5
0
V–
0
51015
LOAD CURRENT (mA)
00068-019
20
Figure 19. Charge Pump V+, V− vs. Load Current
Rev. E | Page 9 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
THEORY OF OPERATION
The ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
are ruggedized RS-232 line drivers/receivers that operate from a
single 5 V supply. Step-up voltage converters coupled with level
shifting transmitters and receivers allow RS-232 levels to be
developed while operating from a single 5 V supply.
Features include low power consumption, high transmission
rates, and compliance with the EU directive on EMC, which
includes protection against radiated and conducted interfereence, including high levels of electrostatic discharge.
All RS-232 inputs and outputs contain protection against
electrostatic discharges up to ±15 kV and electrical fast transients up to ±2 kV. This ensures compliance to IEC 100042
and IEC 100044 requirements.
The devices are ideally suited for operation in electrically harsh
environments or where RS-232 cables are plugged/unplugged
frequently. They are also immune to high RF field strengths
without special shielding precautions.
Emissions are also controlled to within very strict limits.
TTL/CMOS technology is used to keep the power dissipation to
an absolute minimum, allowing maximum battery life in
portable applications. The ADM2xxE is a modification,
enhancement, and improvement to the ADM2xx family and its
derivatives. It is essentially plug-in compatible and does not
have materially different applications.
CIRCUIT DESCRIPTION
The internal circuitry consists of four main sections:
• A charge pump voltage converter.
• 5 V logic to EIA-232 transmitters.
• EIA-232 to 5 V logic receivers.
• Transient protection circuit on all I/O lines.
Charge Pump DC-to-DC Voltage Converter
The charge pump voltage converter consists of a 200 kHz
oscillator and a switching matrix. The converter generates a
±10 V supply from the input 5 V level. This is done in two
stages using a switched capacitor technique as illustrated in
Figure 20 and Figure 21. First, the 5 V input supply is doubled
to 10 V using Capacitor C1 as the charge storage element. The
10 V level is then inverted to generate −10 V using C2 as the
storage element.
Capacitor C3 and Capacitor C4 are used to reduce the output
ripple. If desired, larger capacitors (up to 47 μF) can be used for
Capacitor C1 to Capacitor C4. This facilitates direct substitution
with older generation charge pump RS-232 transceivers.
The V+ and V– supplies can also be used to power external
circuitry, if the current requirements are small (see the
Performance Characteristics
section).
Ty pi ca l
V
GND
INTERNAL
OSCILLATOR
FROM
VOLTAGE
DOUBLER
CC
S1
S2
Figure 20. Charge Pump Voltage Doubler
V+
GND
INTERNAL
OSCILLATOR
S1
S2
Figure 21. Charge Pump Voltage Inverter
Transmitter (Driver) Section
The drivers convert 5 V logic input levels into EIA-232 output
levels. With V
= 5 V and driving an EIA-232 load, the output
CC
voltage swing is typically ±9 V.
Unused inputs can be left unconnected, as an internal 400 kΩ
pull-up resistor pulls them high, forcing the outputs into a low
state. The input pull-up resistors typically source 8 μA when
grounded, so unused inputs should either be connected to V
or left unconnected in order to minimize power consumption.
Receiver Section
The receivers are inverting level shifters that accept EIA-232 input
levels and translate them into 5 V logic output levels. The inputs
have internal 5 kΩ pull-down resistors to ground and are
protected against overvoltages of up to ±25 V. The guaranteed
switching thresholds are 0.4 V minimum and 2.4 V maximum.
Unconnected inputs are pulled to 0 V by the internal 5 kΩ pulldown resistor. This, therefore, results in a Logic 1 output level for
unconnected inputs or for inputs connected to GND.
The receivers have Schmitt trigger inputs with a hysteresis level
of 0.65 V. This ensures error-free reception for both noisy
inputs and for inputs with slow transition times.
ENABLE AND SHUTDOWN
Tabl e 3 and Tabl e 4 are truth tables for the enable and shutdown
control signals. The enable function is intended to facilitate data
bus connections where it is desirable to tristate the receiver
outputs. In the disabled mode, all receiver outputs are placed in
a high impedance state. The shutdown function is intended to
shut down the device, thereby minimizing the quiescent
current. In shutdown, all transmitters are disabled and all
receivers on the ADM211E are tristated.
S3
+ +
C1
S4
+ +
C2
V+ = 2V
V
CC
CC
GND
V– = –(V+)
00068-020
00068-021
CC
C3
S3
S4
C4
Rev. E | Page 10 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
V
V
On the ADM213E, Receiver R4 and Receiver R5 remain
enabled in shutdown. Note that the transmitters are disabled
but are not tristated in shutdown; it is not permitted to connect
multiple (RS-232) driver outputs together.
The shutdown feature is very useful in battery-operated systems
since it reduces the power consumption to 1 μW. During
shutdown, the charge pump is also disabled. The shutdown
control input is active high on the ADM211E, and it is active
low on the ADM213E. When exiting shutdown, the charge
pump is restarted, and it takes approximately 100 μs for it to
reach its steady state operating condition.
HIGH BAUD RATE
The ADM2xxE feature high slew rates, permitting data
transmission rates well in excess of the EIA-232-E
specifications. RS-232 levels are maintained at data rates up to
230 kbps, even under worst-case loading conditions. This
allows for high speed data links between two terminals, making
it suitable for the new generation modem standards that require
data rates of 200 kbps. The slew rate is controlled internally to
less than 30 V/μs to minimize EMI interference.
EN INPUT
EN INPUT
3
0V
VOH
RECEIVE R
OUTPUT
VOL
NOTES
1. EN IS THE COMPLEME NT OF EN FOR THE ADM 213E.
Figure 22. Receiver Disable Timing
3
0V
RECEIVE R
OUTPUT
NOTES
1. EN IS THE COMPLEME NT OF EN FOR THE ADM 213E.
Figure 23. Receiver Enable Timing
t
DR
VOH –0.1V
VOL +0.1V
t
ER
+3.5V
+0.8V
ESD/EFT TRANSIENT PROTECTION SCHEME
The ADM2xxE use protective clamping structures on all inputs
and outputs that clamp the voltage to a safe level and dissipate
the energy present in ESD (electrostatic) and EFT (electrical
fast transient) discharges. A simplified schematic of the
protection structure is shown in
input and output contains two back-to-back high speed
clamping diodes. During normal operation, with maximum
RS232 signal levels, the diodes have no effect because one or
the other is reverse biased, depending on the polarity of the
signal. If, however, the voltage exceeds about ±50 V, reverse
breakdown occurs, and the voltage is clamped at this level. The
diodes are large p-n junctions designed to handle the
instantaneous current surges that can exceed several amperes.
The transmitter outputs and receiver inputs have a similar
protection structure. The receiver inputs can also dissipate some
of the energy through the internal 5 kΩ resistor to GND as well
as through the protection diodes.
The protection structure achieves ESD protection up to
±15 kV and EFT protection up to ±2 kV on all RS-232 I/O
lines. The methods used to test the protection scheme are
discussed in the
Testing (IEC 100044)
RECEIVER
00068-022
ESD Testing (IEC 100042) and EFT/Burst
sections.
INPUT
Figure 24. Receiver Input Protection Scheme
RX
Figure 25. Transmitter Output Protection Scheme
ESD TESTING (IEC 1000-4-2)
IEC 1000-4-2 (previously IEC 801-2) specifies compliance
testing using two coupling methods, contact discharge and airgap discharge. Contact discharge calls for a direct connection to
the unit being tested. Air-gap discharge uses a higher test voltage
but does not make direct contact with the unit under test. With
air-gap discharge, the discharge gun is moved toward the unit
under test, developing an arc across the air gap. This method is
00068-023
influenced by humidity, temperature, barometric pressure,
distance, and rate of closure of the discharge gun. The contact
discharge method, while less realistic, is more repeatable and is
gaining acceptance in preference to the air-gap method.
Although very little energy is contained within an ESD pulse,
the extremely fast rise time, coupled with high voltages, can
cause failures in unprotected semiconductors. Catastrophic
Figure 24 and Figure 25. Each
R1
R
IN
T
OUT
D1
D2
D1
D2
RX
TRANSMITTER
OUTPUT
00068-024
00068-025
Rev. E | Page 11 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
0
destruction can occur immediately because of arcing or heating.
Even if catastrophic failure does not occur immediately, the
device can suffer from parametric degradation that can result in
degraded performance. The cumulative effects of continuous
exposure can eventually lead to complete failure.
I/O lines are particularly vulnerable to ESD damage. Simply
touching or plugging in an I/O cable can result in a static
discharge that can damage or destroy the interface product
connected to the I/O port. Traditional ESD test methods, such
as the MIL-STD-883B method 3015.7, do not fully test product
susceptibility to this type of discharge. This test was intended to
test product susceptibility to ESD damage during handling.
Each pin is tested with respect to all other pins.
There are some important differences between the traditional
test and the IEC test:
• The IEC test is much more stringent in terms of discharge
energy. The peak current injected is over four times greater.
• The current rise time is significantly faster in the IEC test.
• The IEC test is carried out while power is applied to
the device.
It is possible that the ESD discharge could induce latch-up in
the device being tested. This test, therefore, is more representtative of a real-world I/O discharge, where the equipment is
operating normally with power applied. However, both tests
should be performed to ensure maximum protection both
during handling and later during field service.
ADM2xxE products are tested using both of the previously
mentioned test methods. Pins are tested with respect to all other
pins as per the MIL-STD-883B specification. In addition, all I/O
pins are tested per the IEC test specification. The products are
tested under the following conditions:
• Power on (normal operation).
• Power on (shutdown mode).
• Power off.
There are four levels of compliance defined by IEC 1000-4-2.
ADM2xxE products meet the most stringent compliance level
both for contact and for air-gap discharge. This means that the
products are able to withstand contact discharges in excess of
8 kV and air-gap discharges in excess of 15 kV.
100
90
(%)
PEAK
I
10
.1ns TO 1ns
30ns
Figure 28. IEC 1000-4-2 ESD Current Waveform
60ns
TIME t
00068-028
HIGH
VOLTAGE
GENERATOR
ESD TEST METHOD R2 C1
H. BODY MIL-STD- 883B 1.5kΩ 100pF
IEC 1000-4- 2 330Ω 150pF
100
90
(%)
PEAK
I
36.8
10
t
RL
Figure 27. Human Body Model ESD Current Waveform
R1 R2
C1
Figure 26. ESD Test Standards
t
DL
DEVICE
UNDER TEST
TIME t
Table 7. IEC 1000-4-2 Compliance Levels
Level Contact Discharge (kV) Air-Gap Discharge (kV)
1 2 2
2 4 4
3 6 8
4 8 15
00068-026
Table 8. ADM2xxE ESD Test Results
ESD Test Method I/O Pin (kV)
MIL-STD-883B ±15
IEC 1000-4-2
Contact ±8
Air-Gap ±15
EFT/BURST TESTING (IEC 1000-4-4)
IEC 1000-4-4 (previously IEC 801-4) covers EFT/burst
immunity. Electrical fast transients occur because of arcing
contacts in switches and relays. The tests simulate the
interference generated when, for example, a power relay
00068-027
disconnects an inductive load. A spark is generated due to the
well-known back EMF effect. In fact, the spark consists of a
Rev. E | Page 12 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
burst of sparks as the relay contacts separate. The voltage
appearing on the line, therefore, consists of a burst of extremely
fast transient impulses. A similar effect occurs when switching
on fluorescent lights.
The fast transient burst test defined in IEC 1000-4-4 simulates
this arcing; its waveform is illustrated in
Figure 29. It consists of
a burst of 2.5 kHz to 5 kHz transients repeating at 300 ms
intervals. It is specified for both power and data lines.
V
t
300ms 15ms
5ns
V
• Classification 3: Temporary degradation or loss of function
or performance that requires operator intervention or
system reset.
• Classification 4: Degradation or loss of function that is not
recoverable due to damage.
ADM2xxE products meet Classification 2 and have been tested
under worst-case conditions using unshielded cables. Data
transmission during the transient condition is corrupted, but it
can resume immediately following the EFT event without user
intervention.
C
R
HIGH
VOLTAGE
SOURCE
R
C
C
C
Figure 30. IEC 1000-4-4 Fast Transient Generator
L
Z
S
D
M
50Ω
OUTPUT
00068-030
50ns
t
0.2ms/0.4ms
Figure 29. IEC 1000-4-4 Fast Transient Waveform
0068-029
Table 9.
Level
V Peak (kV)
PSU
V Peak (kV)
I/O
1 0.5 0.25
2 1 0.5
3 2 1
4 4 2
A simplified circuit diagram of the actual EFT generator is
illustrated in
Figure 30.
The transients are coupled onto the signal lines using an EFT
coupling clamp. The clamp is 1 m long and surrounds the cable
completely, providing maximum coupling capacitance (50 pF to
200 pF typical) between the clamp and the cable. High energy
transients are capacitively coupled onto the signal lines. Fast rise
times (5 ns), as specified by the standard, result in very effective
coupling. Because high voltages are coupled onto the signal
lines, this test is very severe. The repetitive transients can often
cause problems where single pulses do not. Destructive latch-up
can be induced due to the high energy content of the transients.
Note that this stress is applied while the interface products are
powered up and are transmitting data. The EFT test applies
hundreds of pulses with higher energy than ESD. Worst-case
transient current on an I/O line can be as high as 40 A.
Test results are classified according to the following:
• Classification 1: Normal performance within speci-
fication limits.
• Classification 2: Temporary degradation or loss of
performance that is self recoverable.
IEC 1000-4-3 RADIATED IMMUNITY
IEC 1000-4-3 (previously IEC 801-3) describes the measurement method and defines the levels of immunity to radiated
electromagnetic fields. It was originally intended to simulate the
electromagnetic fields generated by portable radio transceivers
or any other devices that generate continuous wave-radiated
EM energy. Its scope has since been broadened to include
spurious EM energy that can be radiated from fluorescent
lights, thyristor drives, inductive loads, and other sources.
Testing for immunity involves irradiating the device with an EM
field. There are various methods of achieving this, including use of
anechoic chamber, stripline cell, TEM cell, and GTEM cell. A
stripline cell consists of two parallel plates with an electric field
developed between them. The device under test is placed within
the cell and exposed to the electric field. There are three severity
levels having field strengths ranging from 1 V/m to 10 V/m.
Results are classified in a similar fashion to those for IEC 100044.
• Classification 1: Normal operation.
• Classification 2: Temporary degradation or loss of function
that is self recoverable when the interfering signal is
removed.
• Classification 3: Temporary degradation or loss of function
that requires operator intervention or system reset when
the interfering signal is removed.
• Classification 4: Degradation or loss of function that is not
recoverable due to damage.
The ADM2xxE family of products easily meets Classification 1 at
the most stringent requirement (Level 3). In fact, field strengths
up to 30 V/m showed no performance degradation, and errorfree data transmission continued even during irradiation.
Rev. E | Page 13 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
T
Table 10. Test Severity Levels (IEC 1000-4-3)
Level Field Strength (V/m)
1 1
2 3
3 10
EMISSIONS/INTERFERENCE
EN 55022, CISPR 22 defines the permitted limits of radiated
and conducted interference from information technology (IT)
equipment. The objective of the standard is to minimize the
level of emissions, both conducted and radiated.
For ease of measurement and analysis, conducted emissions are
assumed to predominate below 30 MHz, and radiated emissions
are assumed to predominate above 30 MHz.
CONDUCTED EMISSIONS
This is a measure of noise that is conducted onto the line power
supply. Switching transients from the charge pump that are 20 V
in magnitude and that contain significant energy can lead to
conducted emissions. Another source of conducted emissions is
the overlap in switch-on times in the charge pump voltage
converter. In the voltage doubler shown in
not fully turned off before S4 turns on, a transient current glitch
occurs between V
and GND that results in conducted emis-
CC
sions. Therefore, it is important that the switches in the charge
pump guarantee break-before-make switching under all conditions so instantaneous short-circuit conditions do not occur.
The ADM2xxE have been designed to minimize the switching
transients and ensure break-before-make switching, thereby
minimizing conducted emissions. This results in emission
levels well below specified limits. Other than the recommended 0.1 μF capacitor, no additional filtering/decoupling
is required.
Conducted emissions are measured by monitoring the line
power supply. The equipment used consists of a line impedance
stabilizing network (LISN) that essentially presents a fixed
impedance at RF and a spectrum analyzer. The spectrum
analyzer scans for emissions up to 30 MHz. A plot for the
ADM211E is shown in
V
CC
GND
INTERNAL
OSCILLATOR
Figure 31. Charge Pump Voltage Doubler
S1
S2
Figure 33.
S3
+ +
C1
S4
Figure 31, if S2 has
V+ = 2V
C3
V
CC
CC
00068-031
RADIATED EMISSIONS
Radiated emissions are measured at frequencies in excess of
30 MHz. RS-232 outputs designed for operation at high baud
rates while driving cables can radiate high frequency EM
energy. The previously described causes of conducted emissions
can also cause radiated emissions. Fast RS-232 output transitions can radiate interference, especially when lightly loaded
and driving unshielded cables. Charge pump devices are also
prone to radiating noise due to the high frequency oscillator
and the high voltages being switched by the charge pump. The
move toward smaller capacitors in order to conserve board
space has resulted in higher frequency oscillators being employed in the charge pump design, resulting in higher levels of
conducted and radiated emissions.
The RS-232 outputs on the ADM2xxE products feature a controlled slew rate in order to minimize the level of radiated
emissions, yet they are fast enough to support data rates of up to
230 kbps.
ø1
ø2
SWITCHING GLIT CHES
00068-032
Figure 32. Switching Glitches
80
70
60
50
40
(dBµV)
30
20
10
0
0.33 300.6
LOG FREQUENCY (MHz)
Figure 33. Conducted Emissions Plot
63118
LIMI
00068-033
Rev. E | Page 14 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
T
RADIATED NOIS E
DUT
TURNTABLE
ADJUSTABLE
ANTENNA
TO
RECEIVER
00068-034
Figure 34. Radiated Emissions Test Setup
Figure 35 shows a plot of radiated emissions vs. frequency. The
levels of emissions are well within specifications, without the
need for any additional shielding or filtering components. The
ADM2xxE were operated at maximum baud rates and
configured like a typical RS-232 interface.
Testing for radiated emissions was carried out in a shielded
anechoic chamber.
80
70
60
50
40
(dBµV)
30
20
10
0
START 30.0MHz STOP 200.0MHz
LIMI
00068-035
Figure 35. Radiated Emissions
Rev. E | Page 15 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
OUTLINE DIMENSIONS
1.280 (32.51)
1.250 (31.75)
1.230 (31.24)
0.210
(5.33)
0.150 (3.81)
0.130 (3.30)
0.115 (2.92)
0.022 (0.56)
0.018 (0.46)
0.014 (0.36)
PIN 1
MAX
24
1
0.100 (2.54)
BSC
0.070 (1.78)
0.060 (1.52)
0.045 (1.14)
13
12
0.280 (7.11)
0.250 (6.35)
0.240 (6.10)
0.015
(0.38)
MIN
SEATING
PLANE
0.005 (0.13)
MIN
0.060 (1.52)
MAX
0.015 (0.38)
GAUGE
PLANE
0.325 (8.26)
0.310 (7.87)
0.300 (7.62)
0.430 (10.92)
MAX
0.195 (4.95)
0.130 (3.30)
0.115 (2.92)
0.014 (0.36)
0.010 (0.25)
0.008 (0.20)
0.30 (0.0118)
0.10 (0.0039)
COPLANARIT Y
0.10
CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
CORNER LEADS MAY BE CONFIGURED AS WHOLE OR HALF LEADS.
COMPLIANT TO JEDEC STANDARDS MS-001-AF
Figure 36. 24-Lead Plastic Dual In-Line Package [PDIP]
(N-24-1)
Dimensions shown in inches and (millimeters)
15.60 (0.6142)
15.20 (0.5984)
24
1
1.27 (0.0500)
BSC
CONTROLL ING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLI METER EQ UIVALENTS FOR
REFERENCE ON LY AND ARE NOT APPROP RIATE FOR USE IN DESIGN.
0.51 (0.0201)
0.31 (0.0122)
COMPLIANT TO JEDEC STANDARDS MS-013-AD
13
7.60 (0.2992)
7.40 (0.2913)
12
10.65 (0.4193)
10.00 (0.3937)
2.65 (0.1043)
2.35 (0.0925)
SEATING
PLANE
8°
0°
0.33 (0.0130)
0.20 (0.0079)
Figure 37. 24-Lead Standard Small Outline Package [SOIC_W]
Wide Body
(RW-24)
Dimensions shown in millimeters and (inches)
0
0
.
7
.
2
5
(
0
5
(
0
5
)
.
0
2
9
)
.
0
0
9
8
1.27 (0.0500)
0.40 (0.0157)
45°
060706-A
Rev. E | Page 16 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
18.10 (0.7126)
17.70 (0.6969)
0.30 (0.0118)
0.10 (0.0039)
COPLANARIT Y
0.10
28
1
1.27 (0.0500)
BSC
CONTROLL ING DIMENSIONS ARE IN MILLI METERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-O FF MIL LIMET ER EQUIVALENTS FOR
REFERENCE ON LY AND ARE NOT APPROPRI ATE FOR USE IN DESIGN.
0.51 (0.0201)
0.31 (0.0122)
COMPLIANT TO JEDEC STANDARDS MS-013-AE
15
7.60 (0.2992)
7.40 (0.2913)
14
10.65 (0.4193)
10.00 (0.3937)
2.65 (0.1043)
2.35 (0.0925)
SEATING
PLANE
8°
0°
0.33 (0.0130)
0.20 (0.0079)
Figure 38. 28-Lead Standard Small Outline Package [SOIC_W]
Wide Body
(RW-28)
Dimensions shown in millimeters and (inches)
8.50
8.20
7.90
24
1
13
5.60
5.30
8.20
5.00
7.80
12
7.40
0
0
.
7
5
.
2
5
(
0
.
0
2
(
0
.
0
0
5
)
9
45°
)
9
8
1.27 (0.0500)
0.40 (0.0157)
060706-A
2.00 MAX
0.05 MIN
COPLANARITY
0.10
1.85
1.75
1.65
0.38
0.65 BSC
COMPLIANT TO JEDEC STANDARDS MO-150-AG
0.22
SEATING
PLANE
0.25
0.09
8°
4°
0°
Figure 39. 24-Lead Shrink Small Outline Package [SSOP]
(RS-24)
Dimensions shown in millimeters
Rev. E | Page 17 of 20
0.95
0.75
0.55
060106-A
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
C
Y
10.50
10.20
9.90
2.00 MAX
0.05 MIN
COPLANARITY
0.10
0.38
0.22
15
5.60
5.30
8.20
5.00
7.80
1.85
1.75
1.65
SEATING
PLANE
7.40
8°
4°
0°
14
28
1
0.65 BSC
COMPLIANT TO JEDEC STANDARDS MO-150-AH
Figure 40. 28-Lead Shrink Small Outline Package [SSOP]
(RS-28)
Dimensions shown in millimeters
7.90
7.80
7.70
24
PIN 1
0.15
0.05
0.10 COPLANARITY
0.65
BSC
0.30
0.19
COMPLIANT TO JEDEC STANDARDS MO-153-AD
13
121
1.20
MAX
SEATING
PLANE
4.50
4.40
4.30
6.40 BSC
0.20
0.09
8°
0°
Figure 41. 24-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-24)
Dimensions shown in millimeters
9.80
9.70
9.60
0.25
0.09
0.75
0.60
0.45
0.95
0.75
0.55
060106-A
PIN 1
0.15
0.05
OPLANARIT
0.10
28
0.65
BSC
0.30
0.19
COMPLIANT TO JEDEC STANDARDS MO-153-AE
1.20 MAX
SEATING
PLANE
15
4.50
4.40
4.30
0.20
0.09
6.40 BSC
8°
0°
0.75
0.60
0.45
141
Figure 42. 28-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-28)
Dimensions shown in millimeters
Rev. E | Page 18 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
ORDERING GUIDE
Model Temperature Range Package Description Package Option
ADM206EAR −40°C to +85°C 24-Lead SOIC_W RW-24
ADM206EAR-REEL −40°C to +85°C 24-Lead SOIC_W RW-24
ADM206EARZ
ADM206EARZ-REEL
ADM207EAN −40°C to +85°C 24-Lead PDIP N-24-1
ADM207EANZ
ADM207EAR −40°C to +85°C 24-Lead SOIC_W RW-24
ADM207EAR-REEL −40°C to +85°C 24-Lead SOIC_W RW-24
ADM207EARZ
ADM207EARZ-REEL
ADM207EARS −40°C to +85°C 24-Lead SSOP RS-24
ADM207EARS-REEL −40°C to +85°C 24-Lead SSOP RS-24
ADM207EARU −40°C to +85°C 24-Lead TSSOP RU-24
ADM207EARU-REEL −40°C to +85°C 24-Lead TSSOP RU-24
ADM207EARU-REEL7 −40°C to +85°C 24-Lead TSSOP RU-24
ADM207EARUZ
ADM207EARUZ-REEL7
ADM208EAN −40°C to +85°C 24-Lead PDIP N-24-1
ADM208EANZ
ADM208EAR −40°C to +85°C 24-Lead SOIC_W RW-24
ADM208EAR-REEL −40°C to +85°C 24-Lead SOIC_W RW-24
ADM208EARZ
ADM208EARZ-REEL
ADM208EARS −40°C to +85°C 24-Lead SSOP RS-24
ADM208EARS-REEL −40°C to +85°C 24-Lead SSOP RS-24
ADM208EARSZ
ADM208EARSZ-REEL
ADM208EARU −40°C to +85°C 24-Lead TSSOP RU-24
ADM208EARU-REEL −40°C to +85°C 24-Lead TSSOP RU-24
ADM208EARU-REEL7 −40°C to +85°C 24-Lead TSSOP RU-24
ADM208EARUZ
ADM208EARUZ-REEL
ADM211EAR −40°C to +85°C 28-Lead SOIC_W RW-28
ADM211EAR-REEL −40°C to +85°C 28-Lead SOIC_W RW-28
ADM211EARZ
ADM211EARZ-REEL
ADM211EARS −40°C to +85°C 28-Lead SSOP RS-28
ADM211EARS-REEL −40°C to +85°C 28-Lead SSOP RS-28
ADM211EARSZ
ADM211EARSZ-REEL
ADM211EARU −40°C to +85°C 28-Lead TSSOP RU-28
ADM211EARU-REEL −40°C to +85°C 28-Lead TSSOP RU-28
ADM211EARU-REEL7 −40°C to +85°C 28-Lead TSSOP RU-28
ADM211EARUZ
ADM211EARUZ-REEL
ADM211EARUZ-REEL7
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
−40°C to +85°C 24-Lead SOIC_W RW-24
−40°C to +85°C 24-Lead SOIC_W RW-24
−40°C to +85°C 24-Lead PDIP N-24-1
−40°C to +85°C 24-Lead SOIC_W RW-24
−40°C to +85°C 24-Lead SOIC_W RW-24
−40°C to +85°C 24-Lead TSSOP RU-24
−40°C to +85°C 24-Lead TSSOP RU-24
−40°C to +85°C 24-Lead PDIP N-24-1
−40°C to +85°C 24-Lead SOIC_W RW-24
−40°C to +85°C 24-Lead SOIC_W RW-24
−40°C to +85°C 24-Lead SSOP RS-24
−40°C to +85°C 24-Lead SSOP RS-24
−40°C to +85°C 24-Lead TSSOP RU-24
−40°C to +85°C 24-Lead TSSOP RU-24
−40°C to +85°C 28-Lead SOIC_W RW-28
−40°C to +85°C 28-Lead SOIC_W RW-28
−40°C to +85°C 28-Lead SSOP RS-28
−40°C to +85°C 28-Lead SSOP RS-28
−40°C to +85°C 28-Lead TSSOP RU-28
−40°C to +85°C 28-Lead TSSOP RU-28
−40°C to +85°C 28-Lead TSSOP RU-28
Rev. E | Page 19 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
Model Temperature Range Package Description Package Option
ADM213EAR −40°C to +85°C 28-Lead SOIC_W RW-28
ADM213EAR-REEL −40°C to +85°C 28-Lead SOIC_W RW-28
ADM213EARZ
ADM213EARZ-REEL
ADM213EARS −40°C to +85°C 28-Lead SSOP RS-28
ADM213EARS-REEL −40°C to +85°C 28-Lead SSOP RS-28
ADM213EARSZ
ADM213EARSZ-REEL
ADM213EARU −40°C to +85°C 28-Lead TSSOP RU-28
ADM213EARU-REEL −40°C to +85°C 28-Lead TSSOP RU-28
ADM213EARU-REEL7 −40°C to +85°C 28-Lead TSSOP RU-28
ADM213EARUZ
ADM213EARUZ-REEL
ADM213EARUZ-REEL7
1
Z = Pb-free part.
1
1
1
1
1
1
1
−40°C to +85°C 28-Lead SOIC_W RW-28
−40°C to +85°C 28-Lead SOIC_W RW-28
−40°C to +85°C 28-Lead SSOP RS-28
−40°C to +85°C 28-Lead SSOP RS-28
−40°C to +85°C 28-Lead TSSOP RU-28
−40°C to +85°C 28-Lead TSSOP RU-28
−40°C to +85°C 28-Lead TSSOP RU-28
©2006 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
C00068-0-9/06(E)
Rev. E | Page 20 of 20
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