Controls supply voltages from 2 V to 20 V
370 ns response time to short circuit
Resistor-programmable 5 mV to 25 mV current limit
±1% accurate, 12-bit ADC for current, V
Charge pumped gate drive for multiple external N-channel FETs
High gate drive voltage to ensure lowest R
Foldback for tighter FET SOA protection
Automatic retry or latch-off on current fault
Programmable current-limit timer for SOA
Programmable, multifunction GPO
Power-good status output
Analog UV and OV protection
ENABLE pin
Reports power and energy consumption over time
Peak detect registers for current and voltage
PMBus fast mode compliant interface
20-lead LFCSP
APPLICATIONS
Power monitoring and control/power budgeting
Central office equipment
Telecommunication and data communication equipment
PCs/servers
GENERAL DESCRIPTION
The ADM1276 is a hot swap controller that allows a circuit board
to be removed from or inserted into a live backplane. It also features
current and voltage readback via an integrated 12-bit analog-todigital converter (ADC), accessed using a PMBus™ interface.
The load current is measured using an internal current sense
amplifier that measures the voltage across a sense resistor in
the power path via the SENSE+ and SENSE− pins. A default
limit of 20 mV is set, but this limit can be adjusted, if required,
using a resistor divider network from the internal reference
voltage to the ISET pin.
The ADM1276 limits the current through the sense resistor by
controlling the gate voltage of an external N-channel FET in the
power path, via the GATE pin. The sense voltage—and, therefore,
the load current—is maintained below the preset maximum. The
ADM1276 protects the external FET by limiting the time that the
FET remains on while the current is at its maximum value. This
current-limit time is set by the choice of capacitor connected to
the TIMER pin. In addition, a foldback resistor network can be
used to actively lower the current limit as the voltage across the
FET is increased. This helps to maintain constant power in the
FET and allows the safe operating area (SOA) to be adhered to
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or othe r
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
IN/VOUT
DSON
readback
Energy Monitoring with PMBus Interface
FUNCTIONAL BLOCK DIAGRAM
Figure 1.
in an effective manner.
In case of a short-circuit event, a fast internal overcurrent
detector responds within 370 ns and signals the gate to shut
down. A 1500 mA pull-down device ensures a fast FET response.
The ADM1276 features overvoltage (OV) and undervoltage (UV)
protection, programmed using external resistor dividers on the
UV and OV pins. A PWRGD signal can be used to detect when
the output supply is valid, using the FLB pin to monitor the
output. A GPO pin can be configured as an output signal that
can be asserted when a programmed current or voltage level is
reached.
The 12-bit ADC can measure the current in the sense resistor,
as well as the supply voltage on the SENSE+ pin or the output
voltage. A PMBus interface allows a controller to read current
and voltage data from the ADC. Measurements can be initiated
by a PMBus command. Alternatively, the ADC can run continuously, and the user can read the latest conversion data whenever
required. As many as four unique PMBus addresses can be selected,
depending on the way that the ADR pin is connected.
The ADM1276 is available in a 20-lead LFCSP with a
that can be configured for automatic retry or latch-off when an
overcurrent fault occurs.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
POWER SUPPLY
Operating Voltage Range VCC 2.95 20 V
Undervoltage Lockout 2.4 2.7 V VCC rising
Undervoltage Hysteresis 90 120 mV
Quiescent Current ICC 5 mA GATE on and power monitor running
UV PIN
Input Current IUV 100 nA UV ≤ 3.6 V
UV Threshold UVTH 0.97 1.0 1.03 V UV falling
UV Threshold Hysteresis UV
UV Glitch Filter UVGF 2 7 μs 50 mV overdrive
UV Propagation Delay UVPD 5 8 μs UV low to GATE pull-down active
OV PIN
Input Current IOV 100 nA OV ≤ 3.6 V
OV Threshold OVTH 0.97 1.0 1.03 V OV rising
OV Threshold Hysteresis OV
OV Glitch Filter OVGF 0.5 1.5 μs 50 mV overdrive
OV Propagation Delay OVPD 1.0 2 μs OV high to GATE pull-down active
SENSE+ AND SENSE− PINS
Input Current I
Input Imbalance I
VCAP PIN
Internally Regulated
Voltage
ISET PIN
Reference Select Threshold V
Internal Reference V
Gain of Current Sense
Amplifier
Input Current I
GATE PIN Maximum voltage on the gate is always clamped to ≤31 V
Gate Drive Voltage ΔV
10 12 14 V 17 V ≥ VCC ≥ 8 V; I
4.5 13 V 20 V ≥ VCC ≥ 17 V; I
8 10 V V
4.5 6 V V
Gate Pull-Up Current I
Gate Pull-Down Current I
Regulation I
Slow I
Fast I
Gate Holdoff Resistance 20 Ω VCC = 0 V
HOT SWAP SENSE VOLTAGE
Hot Swap Sense Voltage
Current Limit
Foldback Inactive V
24.6 25 25.4 mV V
19.6 20 20.4 mV V
9.6 10 10.4 mV V
4.6 5 5.4 mV V
, V
SENSE+
= 2 V to 20 V, V
SENSE+
SENSE
= (V
SENSE+
− V
) = 0 V, TA = −40°C to +85°C, unless otherwise noted.
SENSE−
40 50 60 mV
50 60 70 mV
HYST
150 μA Per individual pin; SENSE+, SENSE− = 20 V
SENSEx
5 μA I
V
2.66 2.7 2.74 V 0 µA ≤ I
VCAP
1.35 1.5 1.65 V If V
1 V Accuracies included in total sense voltage accuracies
CLREF
AV
50 V/V Accuracies included in total sense voltage accuracies
CSAMP
100 nA V
ISET
ΔV
GAT E
−20 −30 μA V
GAT EU P
GATEDN
GATEDN_REG
45 60 75 μA V
5 10 15 mA V
GATEDN_FAST
V
SENSECL
750 1500 2000 mA V
19.6 20 20.4 mV V
Rev. A | Page 4 of 48
= (I
≤ 100 µA; C
VCAP
> V
≤ V
VCAP
= V
GAT E
ISET
GAT E
= VCC = 5 V; I
= VCC = 2.95 V; I
SENSE+
= 0 V
GAT E
≥ 2 V; V
GAT E
ISET
≥ 2 V
≥ 12 V; VCC ≥ 12 V
GAT E
> 1.65 V; V
ISET
V
≥ 2 V
SS
= (SENSE+) + 3 V; I
GAT E
= 1.25 V; V
ISET
= 1.0 V; V
= 0.5 V; V
ISET
= 0.25 V; V
ISET
) − (I
)
VCAP
= 1 μF
, an internal 1 V reference (V
− V
SENSE+
GAT E
GAT E
≤ 5 μA
≤ 5 μA
≤ 5 μA
≤ 1 μA
GAT E
= 1.0 V; (SENSE+) − (SENSE−) = 30 mV
> 1.12 V; V
FLB
> 1.395 V
FLB
= (SENSE+) + 3 V; I
GAT E
= 0 μA; VSS ≥ 2 V
GAT E
> 1.12 V
> 0.57 V
FLB
> 0.295 V
FLB
) is used
= 0 μA;
GAT E
ADM1276
SS
CBOS
SENSECL
CBOS
TI ME RU PFLT
TIMER
TIMERH
LAT CH
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
9.5 13.0 mV V
Short Glitch Filter Duration 90 200 ns V
Long Glitch Filter Duration
530 900 ns V
(Default)
Response Time
With Short Glitch Filter 180 370 ns 2 mV overdrive maximum severe overcurrent threshold
With Long Glitch Filter 645 1020 ns
SOFT START (SS PIN)
SS Pull-Up Current ISS −12 −10 −8 µA VSS = 0 V
Default V
Limit 0.5 1.25 1.8 mV When V
SENSECL
SS Pull-Down Current 100 µA VSS = 1 V
TIMER PIN
Timer Pull-Up Current I
Power-On Reset(POR) I
Overcurrent (OC) Fault I
TIMERUP
TIMERUPPOR
−2 −3 −4 µA Initial power-on reset; V
−57 −60 −63 µA Overcurrent fault; 0.2 V ≤ V
Timer Pull-Down Current
Retry I
Hold I
Timer Retry/OC Fault
1.7 2 2.3 µA After fault when GATE is off; V
TIMERDNRT
TIMERDNHOLD
100 µA Holds TIMER at 0 V when inactive; V
3.33 3.8 % Defines the limits of the autoretry duty cycle
Current Ratio
Timer High Threshold V
Timer Low Threshold V
0.98 1.0 1.02 V
0.18 0.2 0.22 V
TIMERL
FOLDBACK (FLB PIN)
FLB and PWRGD Threshold V
Input Current I
1.08 1.1 1.12 V FLB rising; V
FLBTH
100 nA V
FLB
100 nA V
Hysteresis Current 1.7 2.3 μA
Internal Hysteresis Voltage 1.9 3.1 mV Voltage drop across the internal 1.3 kΩ resistor
Power-Good Glitch Filter PWRGDGF 0.3 0.7 1 μs 50 mV overdrive
Minimum Foldback Clamp 200 mV Accuracies included in total sense voltage accuracies
VOUT PIN
Input Current 20 μA VOUT = 20 V
PIN
LATC H
Output Low Voltage V
0.4 V I
OL_LATC H
1.5 V I
Leakage Current 100 nA V
1 µA V
ENABLE PIN No internal pull-up present on this pin
Leakage Current 100 nA V
1 µA V
Input High Voltage VIH 1.1 V
Input Low Voltage VIL 0.8 V
= 0 V; V
FLB
> 1.0 V; V
ISET
≥ 1 V
V
= 1.0 V; V
ISET
= 0.25 V; V
ISET
> 1.65 V; V
ISET
= (SENSE+) + 3 V; I
GAT E
= 0.5 V; V
FLB
> 1.1 V; VSS ≥ 2 V
FLB
> 1.1 V; VSS ≥ 2 V
FLB
driven from 18 mV to 52 mV; selectable via
SENSE
PMBus
driven from 18 mV to 52 mV
SENSE
reaches this level, ISS is enabled, ramping V
SENSE
V
= 0 V
SS
= 1.0 V
ISET
≤ 1.0 V; V
FLB
≤ V
VCAP
= 1 mA
LAT CH
≤ 20 V
FLB
= 1.25 V
ISET
= 5 mA
LAT CH
LAT CH
GPO2
GPO2
≤ 2 V;
= 20 V;
≤ 2 V
= 20 V
output high-Z
LATC H
LATC H
output high-Z
GAT E
= (SENSE+) + 3 V; I
GAT E
= 0.5 V
TIMER
≤ 1 V
= 0.5 V
TIMER
TIMER
= 0 μA; VSS ≥ 1 V
= 0 μA;
GAT E
− V
= 0.5 V
SENSECL
;
Rev. A | Page 5 of 48
ADM1276
GPO2
PWRGD
SENSE
SENSE
SENSE+
ADR
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
GPO2/
Output Low Voltage V
1.5 V I
Leakage Current 100 nA V
1 µA V
PWRGD PIN
Output Low Voltage V
1.5 V I
VCC That Guarantees Valid
Output
Leakage Current 100 nA V
1 µA V
CURRENT AND VOLTAGE
MONITORING
Current Sense Absolute
Error
±0.2 ±0.7 % V
±0.08 % V
±1.0 % V
±0.08 % V
±0.2 % V
±1.0 % V
±0.08 % V
±0.2 % V
±2.8 % V
±0.09 % V
±0.2 % V
±0.7 % V
±0.04 % V
±0.15 % V
±0.75 % V
±0.8 % V
±1.1 % V
±2.0 % V
±4.3 % V
SENSE+/VOUT Absolute
Error
±1.0 % High input range; input voltage ≥ 10 V
ADC Conversion Time Includes time for power multiplication
237 280 µs 1 sample of VIN and IOUT; from command received to valid
360 426 µs 1 sample of VIN, VOUT, and IOUT; from command received to
3753 4233 µs 16 samples of VIN and IOUT averaged; from command
5545 6570 µs 16 samples of VIN, VOUT, and IOUT averaged; from command
Power Multiplication Time 14 µs
ADR PIN
Address Set to 00 0 0.8 V Connect to GND
Input Current for Address 00 −40 −22 μA V
Address Set to 01 135 150 165 kΩ Resistor to GND
Address Set to 10 −1 +1 μA No connect state; maximum leakage current allowed
= 20 mV; 1 sample averaging; TA = 25°C
= 20 mV; 1 sample averaging; TA = 0°C to 65°C
SENSE
= 25 mV; V
SENSE
= 25 mV; V
SENSE
= 25 mV; V
SENSE
= 20 mV; V
SENSE
= 15 mV; V
= 10 mV; V
SENSE
= 5 mV; V
SENSE
= 2.5 mV; V
SENSE
= 12 V
SENSE+
= 12 V; TA = 25°C
SENSE+
= 12 V; TA = 0°C to 65°C
SENSE+
= 12 V
SENSE+
= 12 V
= 12 V
SENSE+
= 12 V
SENSE+
= 12 V
SENSE+
data in register
valid data in register
received to valid data in register
received to valid data in register
= 0 V to 0.8 V
Rev. A | Page 6 of 48
ADM1276
SU;STA
R
t
LOW
t
BUF
t
HD;DAT
t
SU;DAT
t
SU;STA
t
HD;STA
t
HIGH
t
R
t
F
t
SU;STO
PSSP
V
IH
V
IL
V
IH
V
IL
SCL
SDA
09718-002
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
Address Set to 11 2 V Connect to VCAP
Input Current for Address 11 3 10 μA V
SERIAL BUS DIGITAL INPUTS
(SDA, SCL)
Input High Voltage VIH 1.1 V
Input Low Voltage VIL 0.8 V
Output Low Voltage VOL 0.4 V IOL = 4 mA
Input Leakage I
−10 +10 μA
LEAK-PIN
−5 +5 μA Device is not powered
Nominal Bus Voltage VDD 2.7 5.5 V 3 V to 5 V ± 10%
Capacitance for SDA, SCL
C
5 pF
PIN
Pins
Input Glitch Filter tSP 0 50 ns
SERIAL BUS TIMING CHARACTERISTICS
Table 2.
Parameter Description Min Typ Max Unit Test Conditions/Comments
f
Clock frequency 400 kHz
SCLK
t
Bus free time 1.3 µs Following the stop condition of a read transaction
BUF
4.7 µs Following the stop condition of a write transaction
t
Start hold time 0.6 µs
HD ;STA
t
Start setup time 0.6 µs
t
Stop setup time 0.6 µs
SU;STO
t
SDA hold time 300 900 ns
HD ;D AT
t
SDA setup time 100 ns
SU ;D AT
t
SCL low time 1.3 µs
LOW
t
SCL high time 0.6 µs
HIGH
1
t
SCL, SDA rise time 20 300 ns
tF SCL, SDA fall time 20 300 ns
1
Note: tR = (V
Timing Diagram
− 0.15) to (V
IL(MAX )
+ 0.15) and tF = 0.9 VDD to (V
IH3V3
− 0.15); where V
IL(MAX )
= 2.1 V, and VDD = 3.3 V.
IH3V3
= 2.0 V to VCAP; must not exceed the maximum allowable
ADR
current draw from VCAP
Figure 2. Serial Bus Timing Diagram
Rev. A | Page 7 of 48
ADM1276
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
VCC Pin −0.3 V to +25 V
UV Pin −0.3 V to +4 V
OV Pin −0.3 V to +4 V
SS Pin −0.3 V to VCAP + 0.3 V
TIMER Pin −0.3 V to VCAP + 0.3 V
VCAP Pin −0.3 V to +4 V
ISET Pin −0.3 V to VCAP + 0.3 V
Pin −0.3 V to +25 V
LATC H
SCL Pin −0.3 V to +6.5 V
SDA Pin −0.3 V to +6.5 V
ADR Pin −0.3 V to VCAP + 0.3 V
ENABLE Pin −0.3 V to +25 V
GPO2/
Pin −0.3 V to +25 V
ALERT2
PWRGD Pin −0.3 V to +25 V
FLB Pin −0.3 V to +25 V
VOUT Pin −0.3 V to +25 V
GAT E Pin (Internal Supply Only)1 −0.3 V to +36 V
SENSE+ Pin −0.3 V to +25 V
SENSE− Pin −0.3 V to +25 V
V
(V
SENSE
SENSE+
− V
) ±0.3 V
SENSE−
Continuous Current into Any Pin ±10 mA
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature, Soldering (10 sec) 300°C
Junction Temperature 150°C
1
The GATE pin has internal clamping circuits to prevent the GATE pin voltage
from exceeding the maximum ratings of a MOSFET with V
internal process limits. Applying a voltage source to this pin externally may
cause irreversible damage.
GSMAX
= 20 V and
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL CHARACTERISTICS
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type θJA Unit
20-lead LFCSP (CP-20-9) 30.4 °C/W
ESD CAUTION
Rev. A | Page 8 of 48
ADM1276
1OV
2VCAP
3ISET
4SS
5TIMER
LATCH
ADR
ENABLE
GPO2/ALERT2
SDA
13
14
15
12
11
FLB
VOUT
GND
PWRGD
SCL
SENSE+
VCC
UV
SENSE–
GATE
6
7
8
01
9
81
91
02
71
61
ADM1276-3
TOP VIEW
(Not to S cale)
PIN 1
INDICATOR
NOTES
1. SOLDER THE EXPOSED PADDLE TO
THE BOARD T O IMPRO V E THERMAL
DISSIPATION. THE EXPOSED PADDLE
CAN BE CONNECTE D TO GRO UND.
09718-003
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 3. Pin Configuration
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
19 VCC Positive Supply Input Pin. An undervoltage lockout (UVLO) circuit resets the device when a low supply voltage is
detected. GATE is held low when the supply is below UVLO. During normal operation, this pin should remain
greater than or equal to SENSE+ to ensure that specifications are adhered to. No sequencing is required.
20 UV Undervoltage Input Pin. An external resistor divider is used from the supply to this pin to allow an internal
comparator to detect whether the supply is under the UV limit.
1 OV Overvoltage Input Pin. An external resistor divider is used from the supply to this pin to allow an internal
comparator to detect whether the supply is above the OV limit.
2 VCAP Internal Regulated Supply. Place a capacitor with a value of 1 µF or greater on this pin to maintain good
accuracy. This pin can be used as a reference to program the ISET pin voltage.
3 ISET Current Limit. This pin allows the current-limit threshold to be programmed. The default limit is set when this pin
is connected directly to VCAP. To achieve a user defined sense voltage, the current limit can be adjusted using a
resistor divider from VCAP. An external reference can also be used.
4 SS Soft Start Pin. A capacitor is used on this pin to set the soft start ramp profile. The voltage on the SS pin controls
the current sense voltage limit, which controls the inrush current profile.
5 TIMER Timer Pin. An external capacitor, C
, sets an initial timing cycle delay and a fault delay. The GATE pin is pulled
TIMER
low when the voltage on the TIMER pin exceeds the upper threshold.
6
Latch Pin. This pin signals that the device is latching off after an overcurrent fault. The device can be configured
LATC H
for automatic retry after latch-off by connecting this pin directly to the UV or the ENABLE pin.
7 ADR PMBus Address Pin. This pin can be tied to GND, tied to VCAP, remain floating, or tied low through a resistor to
set four different PMBus addresses (see the Device Addressing section).
8 ENABLE Enable Pin. This pin is a digital logic input. This input must be high to allow the ADM1276 hot swap controller to
begin a power-up sequence. If this pin is held low, the ADM1276 is prevented from powering up. There is no
internal pull-up on this pin.
General-Purpose Digital Output/Alert. This is a dual function pin. There is no internal pull-up on this pin. The
ALERT2
function of this pin can be configured to generate an alert signal when one or more fault or warning
ALERT2
conditions are detected. At power-up,
indicates the FET health mode by default.
ALERT2
present on the FLB pin.
the current limit when the source voltage drops. The foldback feature ensures that the power through the FET is
not increased beyond the SOA limits.
9 GPO2/
10 SDA Serial Data Input/Output Pin. Open-drain input/output. Requires an external resistive pull-up.
11 SCL Serial Clock Pin. Open-drain input. Requires an external resistive pull-up.
12 PWRGD Power-Good Signal. Used to indicate that the supply is within tolerance. This signal is based on the voltage
13 FLB Foldback Pin. A foldback resistor divider is placed from the source of the FET to this pin. Foldback is used to reduce
Rev. A | Page 9 of 48
ADM1276
Pin No. Mnemonic Description
14 VOUT Output Voltage. This pin is used to read back the output voltage using the internal ADC. A 1 kΩ resistor should
be inserted in series between the source of a FET and the VOUT pin.
15 GND Ground Pin.
16 GATE Gate Output Pin. This pin is the high-side gate drive of an external N-channel FET. This pin is driven by the FET
drive controller, which uses a charge pump to provide a pull-up current to charge the FET gate pin. The FET drive
controller regulates to a maximum load current by regulating the GATE pin. GATE is held low when the supply is
below UVLO.
17 SENSE− Negative Current Sense Input Pin. A sense resistor between the SENSE+ pin and the SENSE− pin sets the analog
current limit. The hot swap operation of the ADM1276 controls the external FET gate to maintain the sense
voltage (V
SENSE+
− V
18 SENSE+ Positive Current Sense Input Pin. This pin connects to the main supply input. A sense resistor between the
SENSE+ pin and the SENSE− pin sets the analog current limit. The hot swap operation of the ADM1276 controls
the external FET gate to maintain the sense voltage (V
input voltage using the ADC.
N/A1 EP Exposed Pad. The exposed pad is located on the underside of the LFCSP package. Solder the exposed pad to the
printed circuit board (PCB) to improve thermal dissipation. The exposed pad can be connected to ground.
1
N/A means not applicable.
). This pin also connects to the FET drain pin.
SENSE−
SENSE+
− V
). This pin is also used to measure the supply
SENSE−
Rev. A | Page 10 of 48
ADM1276
0
1
2
3
4
5
I
CC
(mA)
VCC (V)
24681012141618
20
+25°C
+85°C
–40°C
09718-004
0
1
2
3
4
5
–40
–20
0
I
CC
(mA)
TEMPERATURE (°C)
V
CC
= 20V
V
CC
= 12V
V
CC
= 2.95V
20406080
09718-005
0
2
4
6
8
10
12
14
2468121014161820
I
GATEDN_SLOW
(mA)
V
CC
(V)
+25°C
–40°C
+85°C
09718-006
0
2
4
6
8
10
12
14
I
GATEDN_SLOW
(mA)
TEMPERATURE (°C)
V
CC
= 12V
–40
–20020406080
09718-007
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0510152025
I
GATEDN_SLOW
(mA)
V
GATE
(V)
09718-008
–40
–35
–30
–25
–20
–15
–10
–5
0
2468101214161820
I
GATEUP
(µA)
VCC (V)
09718-009
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 4. Supply Current (ICC) vs. Supply Voltage (VCC)
Figure 7. Gate Pull-Down Current (I
GATEDN_SLOW
) vs. Temperature
Figure 5. Supply Current (I
Figure 6. Gate Pull-Down Current (I
) vs. Temperature
CC
GATEDN_SLOW
) vs. Supply Voltage (VCC)
Rev. A | Page 11 of 48
Figure 8. Gate Pull-Down Current (I
Figure 9. Gate Pull-Up Current (I
GATEDN_SLOW
) vs. Gate Voltage (V
) vs. Supply Voltage (VCC)
GATEUP
GATE
)
ADM1276
0
5
10
15
20
25
30
0510152025
I
GATEUP
(µA)
V
GATE
(V)
V
CC
= 12V
V
CC
= 2.95V
09718-010
–40
–35
–30
–25
–20
–15
–10
–5
0
I
GATEUP
(µA)
TEMPERATURE (°C)
V
CC
= 12V
–40
–20020406080
09718-011
0
2
4
6
8
10
12
14
16
220
ΔV
GATE
(V)
VCC (V)
+85°C
+25°C
–40°C
4681012141618
09718-012
0
2
4
6
8
10
12
14
16
ΔV
GATE
(V)
V
CC
(V)
2468101214161820
+25°C
+85°C
–40°C
09718-013
0
2
4
6
8
10
12
14
16
–40–200204060
ΔV
GATE
(V)
TEMPERATURE (°C)
V
CC
= 12V
V
CC
= 20V
V
CC
= 2.95V
80
09718-014
–20
–18
–16
–14
–12
–10
–8
–6
–4
–2
0
–40
I
SS
(µA)
TEMPERATURE (°C)
V
CC
= 12V
–20020406080
09718-015
Figure 10. Gate Pull-Up Current (I
Figure 11. Gate Pull-Up Current (I
) vs. Gate Voltage (V
GATEUP
GATEUP
) vs. Temperature
GATE
)
Figure 13. Gate Drive Voltage (ΔV
Figure 14. Gate Drive Voltage (ΔV
) vs. Supply Voltage (VCC), 5 µA Load
GATE
) vs. Temperature, No Load
GATE
Figure 12. Gate Drive Voltage (ΔV
) vs. Supply Voltage (VCC), No Load
GATE
Figure 15. Soft Start Pull-Up Current (I
) vs. Temperature
SS
Rev. A | Page 12 of 48
ADM1276
–80
–70
–60
–50
–40
–30
–20
–10
0
I
TIMERUPFLT
(µA)
–40
TEMPERATURE (°C)
–20020406080
VCC = 12V
09718-016
–20020406080
–10
–8
–6
–4
–2
0
I
TIMERUPPOR
(µA)
–40
TEMPERATURE (°C)
V
CC
= 12V
09718-017
–40
–20020406080
0
1.5
3.0
4.5
I
TIMERDNRT
(µA)
VCC = 12V
TEMPERATURE (°C)
09718-018
0
100
200
300
400
500
600
700
800
900
1000
1100
TIMER T HRE S HOLD (mV)
–40
TEMPERATURE (°C)
–2002040
6080
LOW THRESHOLD (VCC = 12V)
HIGH THRES HOLD (V
CC
= 12V)
09718-019
–40–200
TEMPERATURE (°C)
20406080
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.
8
0.9
1.0
1.1
1.2
1.3
FOLDBACK T HRE S HOLD (V)
2.95V
12V
20V
09718-020
0
0.5
1.0
1.5
2.0
2.5
3.0
FOLDBACK HYS TERESIS CURRENT (µA)
2.95V
12V
20V
–40–200
TEMPERATURE (°C)
20406080
09718-021
Figure 16. Timer Pull-Up Current, Overcurrent Fault (I
vs. Temperature
Figure 17. Timer Pull-Up Current, Power-On Reset (I
vs. Temperature
TIMERUPFL T
TIMERUPPOR
)
)
Figure 19. Timer Thresholds vs. Temperature
Figure 20. Foldback Threshold vs. Temperature
Figure 18. Timer Pull-Down Current, Retry (I
) vs. Temperature
TIMERDNRT
Figure 21. Foldback Hysteresis Current vs. Temperature
Rev. A | Page 13 of 48
ADM1276
0
20
40
60
80
100
120
140
160
180
200
220
240
FOLDBACK CL AMP (mV)
TEMPERATURE (°C)
V
CC
= 12V
–40
–20020406080
09718-022
0
25
50
75
100
125
150
175
200
225
250
275
300
325
350
375
400
220
OC RESPONSE TIME (ns)
VCC (V)
4681012141618
+85°C
–40°C
+25°C
09718-023
0
25
50
75
100
125
150
175
200
225
250
275
300
325
350
375
400
OC RESPONSE TIME (ns)
VCC (V)
220
4681012141618
+85°C
+25°C
–40°C
09718-024
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
220
V
CBOS
(mV)
VCC (V)
–40°C
+85°C
+25°C
4681012141618
09718-025
0
5
10
15
20
25
30
V
SENSECL
(mV)
TEMPERATURE (°C)
–40
–20020406080
V
CC
= 12V
09718-026
0
5
10
15
20
25
30
1.11.
00.90.80.70.60.50.40.30.20.10
V
SENSECL
(mV)
V
FLB
(V)
T
A
= 25°C
09718-027
Figure 22. Foldback Clamp vs. Temperature
Figure 23. Severe Overcurrent Response Time vs. Supply Voltage (VCC),
V
= 0.25 V
ISET
Figure 25. Circuit Breaker Offset (V
) vs. Supply Voltage (VCC)
CBOS
Figure 26. Hot Swap Sense Voltage Current Limit (V
) vs. Temperature
SENSECL
Figure 24. Severe Overcurrent Response Time vs. Supply Voltage (VCC),
V
ISET
= 1 V
Figure 27. Hot Swap Sense Voltage Current Limit (V
vs. Foldback Voltage (V
)
FLB
SENSECL
)
Rev. A | Page 14 of 48
ADM1276
0
5
10
15
20
25
30
35
40
45
50
V
SENSEOC
(mV)
V
CC
(V)
TA = 25°C
2468101214161820
09718-028
15
10
5
0
20
25
30
35
40
45
50
V
SENSEOC
(mV)
VCC = 12V
TEMPERATURE (°C)
–40–20020406080
09718-029
0123456789 10 11 12
0
50
100
150
I
SENSEx
(µA)
V
SENSEx
(V)
09718-030
0
5
10
15
20
0 –2 –4 –6 –8 –10 –12 –14 –16 –18 –20 –22 –24 –26
ΔV
GATE
(V)
I
GATEUP
(µA)
VCC = 2.95V
V
CC
= 12V
VCC = 20V
09718-031
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
012345678910
V
OL_PWRGD
(V)
IOL (mA)
VCC = 2.95V
VCC = 12V
09718-032
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
OL
(V)
VCC = 2.95V
VCC = 12V
012345678910
I
OL
(mA)
09718-033
Figure 28. Severe Overcurrent Voltage Threshold (V
vs. Supply Voltage (V
), V
= V
CC
ISET
VCAP
Figure 29. Severe Overcurrent Voltage Threshold (V
vs. Temperature, V
ISET
= V
VCAP
SENSEOC
SENSEOC
)
)
Figure 31. Gate Drive Voltage (ΔV
Figure 32. PWRGD Pin, VOL vs. IOL
) vs. Gate Pull-Up Current (I
GATE
GATEUP
)
Figure 30. SENSE+/SENSE− Input Current (I
) vs. Voltage (V
SENSEx
SENSEx
)
Figure 33.
LATCH
and GPO2/
ALERT2
Digital Outputs, VOL vs. IOL
Rev. A | Page 15 of 48
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