ANALOG DEVICES ADL5801 Service Manual

High IP3,

V

FEATURES

Broadband upconverter/downconverter Power conversion gain of 1.8 dB Broadband RF, LO, and IF ports SSB noise figure (NF) of 9.75 dB Input IP3: 28.5 dBm Input P1dB: 13.3 dBm Typical LO drive: 0 dBm Single-supply operation: 5 V at 130 mA Adjustable bias for low power operation Exposed paddle, 4 mm × 4 mm, 24-lead LFCSP package

APPLICATIONS

Cellular base station receivers Radio link downconverters Broadband block conversion Instrumentation

GENERAL DESCRIPTION

The ADL5801 uses a high linearity, doubly balanced, active mixer core with integrated LO buffer amplifier to provide high dynamic range frequency conversion from 10 MHz to 6 GHz. The mixer benefits from a proprietary linearization architecture that provides enhanced input IP3 performance when subject to high input levels. A bias adjust feature allows the input linearity, SSB noise figure, and dc current to be optimized using a single control pin. An optional input power detector is provided for adaptive bias control. The high input linearity allows the device to be used in demanding cellular applications where in-band blocking signals may otherwise result in degradation in dynamic performance. The adaptive bias feature allows the part to provide high input IP3 performance when presented with large blocking signals. When blockers are removed, the ADL5801 can automatically bias down to provide low noise figure and low power consumption.

10 MHz to 6 GHz, Active Mixer

ADL5801

FUNCTIONAL BLOCK DIAGRAM

GND

LOIP

LOIN

GND

1

ADL5801

2

3

4

5

6

PLO

24

78

NCGND

9101112

GNDVPLO ENBL VSET

Figure 1.

The balanced active mixer arrangement provides superb LO-toRF and LO-to-IF leakage, typically better than −40 dBm. The IF outputs are designed to provide a typical voltage conversion gain of 7.8 dB when loaded into a 200  load. The broad frequency range of the open-collector IF outputs allows the ADL5801 to be applied as an upconverter for various transmit applications.

The ADL5801 is fabricated using a SiGe high performance IC process. The device is available in a compact 4 mm × 4 mm, 24-lead LFCSP package and operates over a −40°C to +85°C temperature range. An evaluation board is also available.

212223

GNDIFON

IFOP

1920

V2I

DET

DETO GND

18

VPRF

17

GND

16

RFIP

RFIN

15

14

GND

VPDT

13

8079-001

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

ADL5801

REVISION HISTORY

7/11—Rev. 0 to Rev. A

Changes to Specifications Section.................................................. 3

Changes to Typical Performance Characteristics Section........... 8

Changes to Spur Performance Section ........................................ 23

Changes to RF Voltage-to-Current (V-to-I) Converter

Section.............................................................................................. 27

Changes to RF Detector Section................................................... 28

Changes to RF and LO Ports Section........................................... 30

2/10—Revision 0: Initial Version

Rev. A | Page 2 of 36

ADL5801

SPECIFICATIONS

VS = 5 V, TA = 25C, fRF = 900 MHz, fLO = (fRF − 153 MHz), LO power = 0 dBm, Z

Table 1.

Parameter Test Conditions Min Typ Max Unit

RF INPUT INTERFACE

Return Loss Tunable to >20 dB over a limited bandwidth 12 dB Input Impedance 50 Ω RF Frequency Range 10 6000 MHz

OUTPUT INTERFACE

Output Impedance Differential impedance, f = 200 MHz 230 Ω IF Frequency Range Can be matched externally to 3000 MHz LF 600 MHz DC Bias Voltage2 Externally generated 4.75 VS 5.25 V

LO INTERFACE

LO Power −10 0 +10 dBm Return Loss 15 dB Input Impedance 50 Ω LO Frequency Range 10 6000 MHz

POWER INTERFACE

Supply Voltage 4.75 5 5.25 V Quiescent Current Resistor programmable 130 200 mA Disable Current ENBL pin high 50 mA Enable Time Time from ENBL pin low to enable 182 ns Disable Time Time from ENBL pin high to disable 28 ns

DYNAMIC PERFORMANCE at fRF = 900 MHz/1900 MHz3

Power Conversion Gain4 f

= 900 MHz 1.8 dB

RF

fRF = 1900 MHz 1.8 dB

Voltage Conversion Gain5 f

= 900 MHz 7.8 dB

RF

fRF = 1900 MHz 7.8 dB

SSB Noise Figure f

SSB Noise Figure Under Blocking

6

Input Third-Order Intercept7 f

Input Second-Order Intercept8 f

= 900 MHz, VSET = 2.0 V 9.75 dB

CENT

f

= 1900 MHz, VSET = 2.0 V 11.5 dB

CENT

f

= 900 MHz 19.5 dB

CENT

f

= 1900 MHz 20 dB

CENT

= 900 MHz 28.5 dBm

CENT

f

= 1900 MHz 26.4 dBm

CENT

= 900 MHz 63 dBm

CENT

f

= 1900 MHz 49.7 dBm

CENT

Input 1 dB Compression Point fRF = 900 MHz 13.3 dBm f

= 1900 MHz 12.7 dBm

RF

LO-to-IF Output Leakage Unfiltered IF output −27 dBm LO-to-RF Input Leakage −30 dBm RF-to-IF Output Isolation −35 dBc IF/2 Spurious9 0 dBm input power, fRF = 900 MHz −67.5 dBc 0 dBm input power, fRF = 1900 MHz −53 dBc IF/3 Spurious9 0 dBm input power, fRF = 900 MHz −65.5 dBc 0 dBm input power, fRF = 1900 MHz −72.6 dBc

DYNAMIC PERFORMANCE at fRF = 2500 MHz10

Power Conversion Gain11 −0.1 dB Voltage Conversion Gain5 −6.1 dB SSB Noise Figure f Input Third-Order Intercept12 f Input Second-Order Intercept13 f Input 1 dB Compression Point f

= 2500 MHz, VSET = 2.0 V 10.6 dB

CENT

= 2500 MHz 25.5 dBm

CENT

= 2500 MHz 45.3 dBm

CENT

= 2500 MHz 13.8 dBm

CENT

1

= 50 Ω, VSET = 3.6 V, unless otherwise noted.

0

Rev. A | Page 3 of 36

ADL5801

Parameter Test Conditions Min Typ Max Unit

LO-to-IF Output Leakage Unfiltered IF output −31.5 dBm LO-to-RF Input Leakage −31.2 dBm RF-to-IF Output Isolation −42.5 dBc IF/2 Spurious9 0 dBm input power, fRF = 2600 MHz −50.6 dBc IF/3 Spurious9 0 dBm input power, fRF = 2600 MHz −59.8 dBc

DYNAMIC PERFORMANCE at fRF = 3500 MHz14

Power Conversion Gain15 −0.44 dB Voltage Conversion Gain5 −6.44 dB SSB Noise Figure f Input Third-Order Intercept7 f Input Second-Order Intercept8 f Input 1 dB Compression Point 12.5 dBm LO-to-IF Output Leakage Unfiltered IF output −30.2 dBm LO-to-RF Input Leakage −29.4 dBm RF-to-IF Output Isolation −29.7 dBc IF/2 Spurious9 0 dBm input power, fRF = 3800 MHz −47.1 dBc IF/3 Spurious9 0 dBm input power, fRF = 3800 MHz −57.8 dBc

DYNAMIC PERFORMANCE at fRF = 5500 MHz16

Power Conversion Gain17 0.8 dB Voltage Conversion Gain5 −5.2 dB SSB Noise Figure f Input Third-Order Intercept7 f Input Second-Order Intercept 8 f Input 1 dB Compression Point 11.3 dBm LO-to-IF Output Leakage Unfiltered IF output −42.6 dBm LO-to-RF Input Leakage −28.9 dBm RF-to-IF Output Isolation −46.7 dBc IF/2 Spurious9 0 dBm input power, fRF = 5800 MHz −44 dBc IF/3 Spurious9 0 dBm input power, fRF = 5800 MHz −47 dBc

DYNAMIC PERFORMANCE at fIF = 900 MHz18

Power Conversion Gain19 0 dB Voltage Conversion Gain5 −6 dB SSB Noise Figure fIF = 900 MHz, fRF = 250 MHz, VSET = 2.0 V 10.6 dB Output Third-Order Intercept20 f Output Second-Order Intercept 21 f Output 1 dB Compression Point 11.1 dBm LO-to-IF Output Leakage Unfiltered IF output −33.8 dBm LO-to-RF Input Leakage −33.4 dBm IF/2 Spurious9

IF/3 Spurious9

DYNAMIC PERFORMANCE at fIF = 2140 MHz22

Power Conversion Gain23 −1.25 dB Voltage Conversion Gain5 −7.25 dB SSB Noise Figure fIF = 2140 MHz, fRF = 190 MHz, VSET = 2.0 V 13.6 dB Output Third-Order Intercept24 f Output Second-Order Intercept25 f Output 1 dB Compression Point 9.9 dBm LO-to-IF Output Leakage Unfiltered IF output −23.8 dBm LO-to-RF Input Leakage −33.2 dBm IF/2 Spurious9

= 3500 MHz, VSET = 3.6 V 15.8 dB

CENT

= 3500 MHz, VSET = 3.6 V 26.5 dBm

CENT

= 3500 MHz, VSET = 3.6 V 42.3 dBm

CENT

= 5500 MHz, VSET = 3.6 V 16.2 dB

CENT

= 5500 MHz, VSET = 3.6 V 22.7 dBm

CENT

= 5500 MHz, VSET = 3.6 V 35.4 dBm

CENT

= 153 MHz, VSET = 3.6 V 30.6 dBm

CENT

= 153 MHz, VSET = 3.6 V 68.7 dBm

CENT

0 dBm input power, f f

= 806 MHz

IF

0 dBm input power, f

= 806 MHz

f

IF

= 170 MHz, VSET = 3.6 V 24 dBm

CENT

= 170 MHz, VSET = 3.6 V 70 dBm

CENT

0 dBm input power, f

= 2210 MHz

f

IF

= 140 MHz,

RF

= 140 MHz,

RF

= 140 MHz,

RF

−62.6 dBc

−68.9 dBc

−51.5 dBc

Rev. A | Page 4 of 36

ADL5801

1

Z0 is the characteristic impedance assumed for all measurements and the PCB.

2

Supply voltage must be applied from an external circuit through choke inductors

3

VS = 5 V, TA = 25°C, fRF = 900 MHz/1900 MHz, fLO = (f

4

Excluding 4:1 IF port transformer (TC4-1W+), RF and LO port transformers (TC1-1-13M+), and PCB loss.

5

Z

= 50 Ω, differential; Z

SOURCE

6

fRF = f

, f

BLOCKER

− 1) MHz, f

CENT

) MHz, f

CENT

− 1) MHz, f

CENT

) MHz, f

CENT

− 1) MHz, f

CENT

) MHz, f

CENT

− 1) MHz, f

CENT

) MHz, f

CENT

= (f

CENT

RF2

= (f

RF2

= (f

RF2

= (f

RF2

= (f

RF2

CENT

7

f

= (f

RF1

8

f

= (f

RF1

9

For details, see the Spur Per section. formance

10

VS = 5 V, TA = 25°C, fRF = 2500 MHz, fLO = (fRF – 211 MHz), LO power = 0 dBm, Z

11

Including 4:1 IF port transformer (TC4-1W+), RF and LO port transformers (TC1-1-43M+ and TC1-1-13M+ respectively), and PCB loss.

12

f

= (f

RF1

13

f

= (f

RF1

14

VS = 5 V, TA = 25°C, fRF = 3500 MHz, fLO = (fRF – 153 MHz), LO power = 0 dBm, Z

15

Including 4:1 IF port transformer (TC4-1W+), RF and LO port transformers (3600BL14M050), and PCB loss.

16

VS = 5 V, TA = 25°C, fRF = 5500 MHz, fLO = (fRF – 153 MHz), LO power = 0 dBm, Z

17

Including 4:1 IF port transformer (TC4-1W+), RF and LO port transformers (5400BL14B050), and PCB loss.

18

VS = 5 V, TA = 25°C, fRF = 153 MHz, fLO = (fRF + 900 MHz), LO power = 0 dBm, Z

19

Including 4:1 IF port transformer (TC4-14+), RF and LO transformers (TC1-1-13M+), and PCB loss.

20

f

= (f

RF1

21

f

= (f

RF1

22

VS = 5 V, TA = 25°C, fRF = 153MHz, fLO = (fRF + 2140 MHz), LO power = 0 dBm, Z

23

Including 4:1 IF port transformer (1850BL15B200), RF and LO port transformers (TC1-1-13M+), and PCB loss.

24

f

= (f

RF1

25

f

= (f

RF1

= 200 Ω differential; Z

LOAD

− 5) MHz, fLO = (f = (f

) MHz, fLO = (f

CENT

+ 100) MHz, fLO = (f

CENT

= (f

) MHz, fLO = (f

RF2

CENT

+ 100) MHz, fLO = (f

CENT

= (f

) MHz, fLO = (f

RF2

CENT

+ 100) MHz, fLO = (f

CENT

= (f

) MHz, fLO = (f

RF2

CENT

+ 100) MHz, fLO = (f

CENT

– 153 MHz), LO power = 0 dBm, Z

RF

is the impedance of the source instrument; Z

− 153) MHz, blocker level = 0 dBm.

CENT

SOURCE

– 153) MHz, each RF tone at −10 dBm.

CENT

– 211) MHz, each RF tone at −10 dBm.

CENT

– 211) MHz, each RF tone at −10 dBm

CENT

0

+ 900 MHz), each RF tone at −10 dBm.

CENT

+ 900) MHz, each RF tone at −10 dBm.

CENT

+ 2140 MHz), each RF tone at −10 dBm.

CENT

+ 2140) MHz, each RF tone at −10 dBm.

CENT

1

0

1

= 50 Ω, VSET = 3.8 V, unless otherwise noted.

0

is the load impedance at the output.

LOAD

1

= 50 Ω, VSET = 3.8 V, unless otherwise noted.

0

1

= 50 Ω, VSET = 3.6 V, unless otherwise noted.

0

1

= 50 Ω, VSET = 3.6 V, unless otherwise noted.

0

= 50 Ω, VSET = 3.6 V, unless otherwise noted.

1

= 50 Ω, VSET = 4 V, unless otherwise noted.

Rev. A | Page 5 of 36

ADL5801

ABSOLUTE MAXIMUM RATINGS

Table 2.

Parameter Rating

Supply Voltage, VPOS 5.5 V VSET, ENBL 5.5 V IFOP, IFON 5.5 V RFIN Power 20 dBm Internal Power Dissipation 1.2 W θJA (Exposed Paddle Soldered Down)1 26.5°C/W θJC (at Exposed Paddle) 8.7°C/W Maximum Junction Temperature 150°C Operating Temperature Range −40°C to +85°C Storage Temperature Range −65°C to +150°C

1

As measured on the evaluation board. For details, see the Evaluation Board

section.

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ESD CAUTION

Rev. A | Page 6 of 36

ADL5801

O

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

IFOP

GND

NC

IFON

GND

VPL

20

19

22

21

23

24

PIN 1 INDICATOR

1GND 2GND

ADL5801

3LOIP

TOP VIEW

4LOIN

(Not to Scale)

5GND 6GND

9

7

8

L

GND

ENB

VPLO

NOTES

1. THERE IS AN EXPOSED PADDLE THAT MUST BE SOLDERED TO GROUND.

2. NC = NO CONNECT.

Figure 2. Pin Configuration

Table 3. Pin Function Descriptions

Pin No. Mnemonic Description

1, 2, 5, 6, 8, 12,

GND Device Common (DC Ground).

14, 17, 19, 23 3, 4 LOIP, LOIN Differential LO Input Terminal. Internally matched to 50 Ω. Must be ac-coupled. 7, 24 VPLO Positive Supply Voltage for LO System. 9 ENBL Device Enable. Pull high to disable the device; pull low to enable. 10 VSET

Input IP3 Bias Adjustment. The voltage presented to the VSET pin sets the internal bias of the mixer core and allows for adaptive control of the input IP3 and NF characteristics of the mixer core.

11 DETO

Detector Output. The DETO pin should be loaded with a capacitor to ground. The developed voltage is proportional to the rms input level. When the DETO output voltage is connected to the VSET input pin,

the part auto biases and increases input IP3 performance when presented with large signal input levels. 13 VPDT Positive Supply Voltage for Detector. 15, 16 RFIN, RFIP

Differential RF Input Terminal. Internally matched to 50 Ω differential input impedance. Must be

ac-coupled. 18 VPRF Positive Supply Voltage for RF Input System. 20, 21 IFOP, IFON

Differential IF Output Terminal. Bias must be applied through pull-up choke inductors or the center tap

of the IF transformer. 22 NC Not Connected. EPAD The exposed paddle must be soldered to ground.

18 VPRF 17 GND 16 RFIP 15 RFIN 14 G ND 13 VP DT

11

12

10

GND

VSET

DETO

8079-002

Rev. A | Page 7 of 36

ADL5801

C

TYPICAL PERFORMANCE CHARACTERISTICS

DOWNCOVERTER MODE WITH A BROADBAND BALUN

VS = 5 V, TA = 25°C, VSET = 3.8 V, IF = 153 MHz, as measured using a typical circuit schematic with low-side local oscillator (LO), unless otherwise noted. Insertion loss of input and output baluns (TC1-1-13M+, TC4-1W+) is extracted from the gain measurement.

6

5

4

3

2

1

GAIN (dB)

0

–1

–2

–3

–4

500 1000 1500 2000 2500 3000

TA = –40°C

T

= +85°C

A

RF FREQUENCY (MHz)

TA = +25°C

Figure 3. Power Conversion Gain vs. RF Frequency

4.0

3.5

3.0

2.5

2.0

GAIN (dB)

1.5

1.0

0.5

0

0 50 100 150 200 250

900MHz

1900MHz

IF FREQUENCY (MHz)

Figure 4. Power Conversion Gain vs. IF Frequency

3.0

2.5

2.0

1.5

1.0

GAIN (dB)

0.5

0

–0.5

GAIN = 900MHz GAIN = 1900M Hz I

= 900MHz

POS

I

= 1900MHz

POS

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

8079-003

08079-004

SUPPLY CURRENT (A)

6

5

4

GAIN = 900MHz GAIN = 1900MHz

3

INPUT IP 3 = 900MHz

GAIN (dB)

INPUT IP 3 = 1900MHz

2

1

0

–15 –1 0 –5 0 5 10 15

LO LEVEL (dBm)

Figure 6. Power Conversion Gain and Input IP3 vs. LO Power

100

90

1.700

MEAN = 1.87 SD = 0.03

1.740

1.780

1.820

POWER CONVERSION GAIN (dB)

1.860

1.900

1.940

1.980

80

70

60

Y (%)

50

40

FREQUEN

30

20

10

0

Figure 7. Power Conversion Gain Distribution

3.0

2.5

2.0

1.5

GAIN (dB)

1.0

0.5

TA = –40°C

TA = +25°C

= +85°C

T

A

35

30

25

20

INPUT IP3 (dBm)

15

10

5

2.020

2.060

2.100

08079-007

08079-006

–1.0

2.0 3.02.5 3.5 4.0 4.5 5.0

VSET (V)

Figure 5. Power Conversion Gain and Supply Current vs. VSET

0.02

0

4.7 4.8 4.9 5.0 5.1 5.2 5.3

8079-005

SUPPLY (V)

08079-008

Figure 8. Power Conversion Gain vs. Supply Voltage

Rev. A | Page 8 of 36

ADL5801

35

30

25

20

15

INPUT IP3 (dBm)

10

5

0

500 1000 1500 2000 2500 3000

TA = –40°C

RF FREQUENCY (MHz)

= +85°C

T

A

TA = +25°C

Figure 9. Input IP3 vs. RF Frequency

40

35

30

25

INPUT IP3 (dBm)

20

15

900MHz

1900MHz

08079-009

70

60

TA = –40°C

= +25°C

T

50

A

T

= +85°C

A

40

30

INPUT IP2 (dBm)

20

10

0

500 1000 1500 2000 2500 3000

RF FREQUENCY (MHz)

Figure 12. Input IP2 vs. RF Frequency

80

70

60

50

40

30

INPUT IP2 (dBm)

20

10

900MHz

1900MHz

8079-012

10

0 50 100 150 200 250

IF FRE QUENCY (MH z)

Figure 10. Input IP3 vs. IF Frequency

30

25

20

15

INPUT IP3 (dBm)

10

5

0

2.0 2.5 3.0 3.5 4.0 4.5 5.0

INPUT IP3 = 900MHz INPUT IP3 = 1900MHz NF = 900MHz NF = 1900MHz

VSET (V)

Figure 11. Input IP3 and Noise Figure vs. VSET

0

0 50 100 150 200 250

08079-010

IF FREQUENCY (MHz)

08079-013

Figure 13. Input IP2 vs. IF Frequency

20

18

16

14

12

NOISE FI GURE (dB)

10

8

08079-011

80

70

60

50

40

30

INPUT IP2 (dBm)

20

10

0

2.0 2.5 3.53.0 4. 0 4.5 5.0

900MHz

1900MHz

VSET (V)

8079-014

Figure 14. Input IP2 vs. VSET

Rev. A | Page 9 of 36

ADL5801

20

18

16

14

12

10

8

INPUT P1dB (dBm)

6

4

2

0

500 1000 1500 2000 2500 3000

20

18

16

14

12

10

8

INPUT P1dB (dBm)

6

4

2

0

0 50 100 150 200 250

18

16

14

12

10

8

6

SSB NOISE F IGURE (dB)

4

2

0

500 1000 1500 2000 2500 3000

Figure 17. SSB Noise Figure vs. RF Frequency (VSET = 2.0 V)

= +25°C

T

= +85°C

T

A

RF FREQUENCY (MHz)

A

TA = –40°C

Figure 15. Input P1dB vs. RF Frequency

900MHz

1900MHz

IF FREQUENCY (MHz)

Figure 16. Input P1dB vs. IF Frequency

= +85°C

T

A

T

= +25°C

A

TA = –40°C

RF FREQUENCY (MHz)

25

20

15

10

SSB NOISE F IGURE (dB)

5

0

0 100 200 300 400 500 600 700

08079-015

1900MHz

900MHz

IF FREQUENCY (MHz)

8079-018

Figure 18. SSB Noise Figure vs. IF Frequency (VSET = 2.0 V)

30

25

20

15

10

SSB NOISE FIGURE (dB)

5

0

–30 –25 –20 –15 –10 –5 0 5

08079-016

RF = 1846MHz, I F = 153 MHz

BLOCKER = 1841MHz

RF = 951MHz, I F = 153 MHz

BLOCKER = 946MHz

BLOCKER LEVE L (dBm)

08079-019

Figure 19. SSB Noise Figure vs. Blocker Level (VSET = 2.0 V)

20

18

16

14

12

10

8

6

SSB NOISE F IGURE (dB)

4

2

0

–15 –10 –5 0 5 10 15

08079-017

1900MHz

900MHz

LO LEVEL (dBm)

8079-020

Figure 20. SSB Noise Figure vs. LO Power (VSET = 2.0 V)

Rev. A | Page 10 of 36

ADL5801

–

A

0

5

10

15

20

25

RF RETURN LOSS (dB)

30

35

0 500 1000 1500 2000 2500 3000

RF FREQUENCY ( MHz)

Figure 21. RF Return Loss vs. RF Frequency

0

5

10

15

20

25

LO RETURN LOSS (dB)

30

35

0 500 1000 1500 2000 2500 3000

LO FREQUENCY (MHz)

Figure 22. LO Return Loss vs. LO Frequency

500

8079-021

08079-022

4

10

LO-TO-IF LEAKAGE (dBm)

–15

–20

–25

–30

–35

–40

–45

–50

–55

–60

500

TA = –40°C

= +25°C

T

A

T

= +85°C

A

1000 1500 2000 2500 3000

LO FREQ UENCY (MHz)

Figure 24. LO-to-IF Leakage vs. LO Frequency

10

–15

–20

–25

–30

–35

–40

–45

LO-TO-RF LE AKAGE (dBm)

–50

–55

–60

500 1000 1500 2000 2500 3000

TA = –40°C T

= +25°C

A

T

= +85°C

A

LO FREQUENCY ( MHz)

Figure 25. LO-to-RF Leakage vs. LO Frequency

0

08079-024

08079-025

400

300

200

RESISTANCE (Ω)

100

0

100 100010 3000

IF FREQUENCY (MHz)

Figure 23. IF Differential Output Impedance (R Parallel C Equivalent)

2

0

–2

CAPACITANCE (pF)

–4

–6

08079-023

Rev. A | Page 11 of 36

–10

–20

TION (dBc)

–30

–40

–50

RF-TO-IF OUTPUT ISOL

–60

500 1000 1500 2000 2500 3000

TA = +85°C

TA = –40°C

RF FREQUENCY (MHz)

TA = +25°C

08079-026

Figure 26. RF-to-IF Leakage vs. RF Frequency

ANALOG DEVICES ADL5801 Service Manual

FEATURES

APPLICATIONS

GENERAL DESCRIPTION

FUNCTIONAL BLOCK DIAGRAM

TABLE OF CONTENTS

REVISION HISTORY

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

ESD CAUTION

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

TYPICAL PERFORMANCE CHARACTERISTICS

DOWNCOVERTER MODE WITH A BROADBAND BALUN