ANALOG DEVICES ADL5570 Service Manual
2.3 GHz to 2.4 GHz
V
V
FEATURES
Fixed gain of 29 dB
Operation from 2.3 GHz to 2.4 GHz
EVM ≤ 3% at P
Input internally matched to 50 Ω
Power supply: 3.2 V to 4.2 V
Quiescent current
130 mA in high power mode
70 mA in low power mode
Power-added efficiency (PAE): 20%
Multiple operating modes to reduce battery drain
Low power mode: 100 mA
Standby mode: 1mA
Sleep mode: <1 μA
APPLICATIONS
WiMAX/WiBro mobile terminals
= 25 dBm with 16 QAM OFDMA
OUT
WiMAX Power Amplifier
FUNCTIONAL BLOCK DIAGRAM
FIRST
IM1 IM2 IM3
RFIN
STBY
VREG
MODE
STAGE
CC1
SECOND
STAGE
BIAS_2BIAS_1 BIAS_3
Figure 1.
THIRD
STAGE
ADL5570
CC2
RFOUT
OM
CFLT
06729-001
GENERAL DESCRIPTION
The ADL5570 is a high linearity 2.3 GHz to 2.4 GHz power
amplifier designed for WiMAX terminals using TDD operation
at a duty cycle of 31%. With a gain of 29 dB and an output
compression point of 31 dBm at 2.35 GHz, it can operate at
an output power level up to 26 dBm while maintaining an EVM
of ≤3% (OFDM 16 or 64 QAM) with a supply voltage of 3.5 V.
PAE is 20% @ P
The ADL5570 RF input is matched on-chip and provides an
input return loss of less than −10 dB. The open-collector output is
externally matched with strip-line and external shunt capacitance.
= 25 dBm.
OUT
The ADL5570 operates over a supply voltage range from 3.2 V
to 4.2 V with a supply current of 440 mA burst rms when
delivering 25 dBm (3.5 V supply). A low power mode is also
available for operation at power levels of ≤10 dBm with
optimized operating and quiescent currents of 100 mA and
70 mA, respectively. A standby mode is available that reduces
the quiescent current to 1 mA, which is useful when a TDD
terminal is receiving data.
The ADL5570 is fabricated in a GaAs HBT process and is packaged
in a 4 mm × 4 mm, 16-lead, Pb-free RoHS-compliant LFCSP
that uses an exposed paddle for excellent thermal impedance.
It operates from −40°C to +85°C.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2007 Analog Devices, Inc. All rights reserved.
ADL5570
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
V
= 3.5 V .................................................................................... 3
CC
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Pin Configuration and Function Descriptions............................. 5
Typical Performance Characteristics ............................................. 6
REVISION HISTORY
5/07—Rev. 0: Initial Version
Applications........................................................................................8
Basic Connections.........................................................................8
64 QAM OFDMA Performance..................................................9
Power-Added Efficiency...............................................................9
Evaluation Board ............................................................................ 10
Measurement Setup Using the ADL5570
Evaluation Board ........................................................................ 11
Outline Dimensions ....................................................................... 12
Ordering Guide .......................................................................... 12
Rev. 0 | Page 2 of 12
ADL5570
SPECIFICATIONS
VCC = 3.5 V
TA = 25°C, 1024 FFT, 16 QAM OFDMA modulated carrier, 10 MHz channel BW, 16 QAM, ZL = 50 Ω, MODE = 0 V, STBY = 0 V,
VREG = 2.85 V, 31% duty cycle, unless otherwise noted.
Table 1.
Parameter Conditions Min Typ Max Unit
FREQUENCY RANGE 2.3 2.4 GHz
LINEAR OUTPUT POWER
MODE = 0 V, 16 QAM, EVM ≤ 3%
MODE = 2.5 V, 16 QAM, EVM ≤ 3%
GAIN 29 dB
vs. Frequency ±5 MHz ±0.1 dB
vs. Temperature −40°C ≤ TA ≤ +85°C ±1.5 dB
vs. Supply 3.2 V to 4.2 V ±0.5 dB
OP1dB Unmodulated input 31 dBm
EVM P
= 25 dBm 3 % rms
OUT
INPUT RETURN LOSS 10 dB
WiBro SPECTRAL MASK @ P
(CARRIER OFFSETS SCALED TO 10 MHz BW SIGNAL)
FCC SPECTRAL MASK @ P
= 25 dBm
OUT
= 25 dBm
OUT
1
±5.45 MHz carrier offset
±10.9 MHz carrier offset
±15.12 MHz carrier offset
±20.26 MHz carrier offset
±5 MHz carrier offset
±6 MHz carrier offset
±10.5 MHz carrier offset
±20 MHz carrier offset
HARMONIC DISTORTION 43 dBc
POWER SUPPLY INTERFACE VCC = 3.5 V
SUPPLY CURRENT P
P
PAE P
= 25 dBm, MODE = 0 V 440 mA
OUT
= 10 dBm, MODE = 2.5 V 100 mA
OUT
= 25 dBm, MODE = 0 V 20 %
OUT
STANDBY MODE VREG = 2.85 V, STBY = 2.5 V 1 mA
SLEEP MODE VREG = 0 V 10 μA
TURN ON/OFF TIME 1 μs
VSWR SURVIVABILITY 10:1
1
OFDMA carrier, 16 QAM, 10 MHz channel BW, 1024 FFT.
25 dBm
10 dBm
36 dBr
42 dBr
48 dBr
52 dBr
36 dBr
38 dBr
42 dBr
52 dBr
Rev. 0 | Page 3 of 12
ADL5570
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage
V
CC
VREG 3 V
STBY 3 V
MODE 3 V
RFOUT (Modulated—High Power Mode)
Output Load VSWR 10:1
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Maximum Solder Reflow Temperature 260°C (30 sec)
1
OFDMA carrier, 16 QAM, 10 MHz channel BW, 1024 FFT.
5.0 V
1
29 dBm
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. 0 | Page 4 of 12
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