Fixed gain of 20 dB
Operation up to 500 MHz
Input/output internally matched to 50 Ω
Integrated bias control circuit
OIP3 of 40 dBm at 70 MHz
P1dB of 20.4 dBm at 70 MHz
Noise figure of 2.5 dB at 70 MHz
Temperature and power supply stable
Single 5 V power supply
GENERAL DESCRIPTION
The ADL5534 contains two broadband, fixed-gain, linear
amplifiers and operates at frequencies up to 500 MHz. The
device can be used in a wide variety of equipment, including
cellular, satellite, broadband, and instrumentation equipment.
The ADL5534 has a fixed gain of 20 dB, which is stable over
frequency, temperature, power supply, and from device-todevice. The amplifiers are single-ended and internally matched
to 50 Ω. Only input/output ac-coupling capacitors, power supply
decoupling capacitors, and an external bias inductor are
required for operation of each amplifier.
Dual IF Amplifier
ADL5534
FUNCTIONAL BLOCK DIAGRAM
15 NC
14 NC
BIAS
BIAS
NC 6
CLIN2 7
Figure 1.
13 RFOUT1
12 CLIN1
11 NC
10 NC
9 NC
RFOUT2 8
06836-001
16 RFI N1
NC 1
NC 2
NC 3
NC
NC = NO CONNECT
ADL5534
4
RFIN2 5
The ADL5534 is fabricated on a GaAs HBT process. The
device is packaged in a 16-lead 5 mm × 5 mm LFCSP that
uses an exposed paddle for excellent thermal impedance.
The ADL5534 consumes 98 mA of current per amplifier on
a single 5 V supply, and is fully specified for operation from
−40°C to +85°C.
A similar amplifier, ADL5531 (available from Analog Devices,
Inc.) is the 20 dB gain single-channel version. Fully populated
evaluation boards for both the ADL5531 and ADL5534 are
available.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Frequency Range 20 500 MHz
Gain (S21) 190 MHz 20.4 dB
Input Return Loss (S11) 190 MHz −18.0 dB
Output Return Loss (S22) 190 MHz −29.0 dB
Reverse Isolation (S12) 190 MHz −23.0 dB
FREQUENCY = 70 MHz
Gain 21.0 dB
vs. Frequency ±5 MHz ±0.04 dB
vs. Temperature −40°C ≤ TA ≤ +85°C ±0.20 dB
vs. Supply 4.75 V to 5.25 V ±0.20 dB
Output 1 dB Compression Point 20.4 dBm
Output Third-Order Intercept f = 1 MHz, output power (P
Noise Figure 2.5 dB
Device-to-Device Isolation Measured at output with input applied to alternate device −46.0 dB
FREQUENCY = 190 MHz
Gain 19.520.4 21 dB
vs. Frequency ±50 MHz ±0.15 dB
vs. Temperature −40°C ≤ TA ≤ +85°C ±0.20 dB
vs. Supply 4.75 V to 5.25 V ±0.17 dB
Output 1 dB Compression Point 20.6 dBm
Output Third-Order Intercept f = 1 MHz, output power (P
Noise Figure 2.7 dB
Device-to-Device Isolation Measured at output with input applied to an alternate device −38.0 dB
FREQUENCY = 380 MHz
Gain 19.019.8 20.5 dB
vs. Frequency ±50 MHz ±0.18 dB
vs. Temperature −40°C ≤ TA ≤ +85°C ±0.22 dB
vs. Supply 4.75 V to 5.25 V ±0.16 dB
Output 1 dB Compression Point 20.4 dBm
Output Third-Order Intercept f = 1 MHz, output power (P
Noise Figure 3.0 dB
Device-to-Device Isolation Measured at output with input applied to an alternate device −34.0 dB
POWER INTERFACE RFOUT1, RFOUT2 pins
Supply Voltage 4.75 5 5.25 V
Supply Current Per amplifier 98 110 mA
vs. Temperature −40°C ≤ TA ≤ +85°C ±15 mA
Power Dissipation 0.5 W
) = 0 dBm per tone 40.0 dBm
OUT
) = 0 dBm per tone 39.0 dBm
OUT
) = 0 dBm per tone 36.0 dBm
OUT
Rev. 0 | Page 3 of 16
ADL5534
TYPICAL SCATTERING PARAMETERS
VPOS = 5 V and TA = 25°C; the effects of the test fixture have been de-embedded up to the pins of the device.
Supply Voltage on RFOUT1, RFOUT2 5.5 V
Input Power on RFIN1, RFIN2 10 dBm
Internal Power Dissipation (Paddle Soldered) 900 mW
θJA (Junction-to-Air) 54°C/W
Maximum Junction Temperature 150°C
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. 0 | Page 5 of 16
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